CN105932118A - LED epitaxial growth method for improving hole injection - Google Patents
LED epitaxial growth method for improving hole injection Download PDFInfo
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- CN105932118A CN105932118A CN201610419939.0A CN201610419939A CN105932118A CN 105932118 A CN105932118 A CN 105932118A CN 201610419939 A CN201610419939 A CN 201610419939A CN 105932118 A CN105932118 A CN 105932118A
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
The invention discloses an LED epitaxial growth method for improving hole injection. The method sequentially comprises the following steps: processing a substrate; growing a low-temperature GaN nucleating layer; growing a high-temperature GaN buffer layer; growing an undoped u-GaN layer; growing an Si-doped n-GaN layer; growing a multi-quantum well (MQW) light-emitting layer; growing an Mg-doped InGaN:Mg layer with a two-stage gradually-changed temperature; growing a P-type AlGaN layer; growing a high-temperature P-type GaN layer; growing a P-type GaN contact layer; and carrying out cooling. By the scheme, after multi-quantum well layer growth is ended, an Mg-doped InGaN:Mg layer structure with the two-stage gradually-changed temperature is grown, so that the hole concentration is improved; the hole mobility is also improved; improvement of the hole injection level of a quantum well region is facilitated; the working voltage of an LED is reduced; and the light-emitting efficiency of the LED is improved.
Description
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to a kind of raising sky
The LED epitaxial growth method that cave is injected.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting at present, volume
Little, power consumption long high brightness in low service life, environmental protection, the advantage such as sturdy and durable are recognized by consumers in general
Can, the scale of domestic production LED is also progressively expanding；To LED luminance and the demand of light efficiency on market
Grow with each passing day, how to grow more preferable epitaxial wafer and be increasingly subject to pay attention to, because the carrying of epitaxial layer crystal mass
Height, the performance of LED component can get a promotion, the luminous efficiency of LED, the life-span, ageing resistance,
Antistatic effect, stability can promote along with the lifting of epitaxial layer crystal mass.
Require now on LED market that LED chip driving voltage is low, driving voltage under the biggest electric current
The smaller the better, light efficiency is the highest more good.LED market value be presented as (light efficiency)/unit price, light efficiency is more
Good, price is the highest, so LED specular removal is always LED producer and universities and colleges' LED institute is pursued
Target.Specular removal means that luminous power is high, driving voltage is low, but luminous power is to a certain extent by P
The restriction of layer hole concentration, driving voltage is limited by P layer hole mobility to a certain extent, injects
Hole concentration increase, the combined efficiency of luminescent layer hole and electronics increases, and high luminous power increases, P layer
Hole mobility increases driving voltage and could reduce.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided a kind of improve hole inject
LED epitaxial growth method, after MQW layer growth completes, grows one layer and has temperature two sections gradually
The InGaN:Mg Rotating fields mixing Mg become, had both improve hole concentration, had improve again hole mobility,
And then be conducive to improving the hole Injection Level of quantum well region, reduce the running voltage of LED, improve
The luminous efficiency of LED.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of LED epitaxial growth method improving hole injection, it is characterised in that include successively:
Process substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, growth undoped
U-GaN layer, growth doping Si n-GaN layer, growth MQW MQW luminescent layer, growth
Two sections of gradual changes of temperature mix the InGaN:Mg layer of Mg, growing P-type AlGaN layer, growth high temperature p-type
GaN layer, growth P-type GaN contact layer, cooling down,
The InGaN:Mg layer mixing Mg of described two sections of gradual changes of growth temperature, be further:
It is passed through TMIn, TMGa and Cp to reaction chamber2Mg is as MO source, and is passed through NH3, growth
Thickness is the InGaN:Mg layer mixing Mg of two sections of gradual changes of one layer of temperature of 20nm-120nm, grows
Cheng Zhong, is first increased to temperature T2 by growth temperature from the gradual change of temperature T1, then by growth temperature from temperature
T2 gradual change is reduced to temperature T1, by reaction chamber Stress control at 100Torr-500Torr,
Wherein, 700 DEG C of ＜ T1 ＜ 850 DEG C, 750 DEG C of ＜ T2 ＜ 900 DEG C, and T2 ＞ T1, growth temperature
When T2 gradual change is reduced to T1, InGaN:Mg layer is grown with growth temperature when T1 gradual change is increased to T2
Thickness identical, thickness is 10nm-60nm, in growth course, is passed through NH3Mole with TEGa
Being 0.3%-1% than the molar constituent for 300-5000, Mg, the molar constituent of In is 1%-10%.
Preferably, wherein:
Described growing low temperature GaN nucleating layer, be further:
Reduction temperature, to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through NH3
And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, wherein, is passed through NH3With
The mole of TMGa is than for 500-3000.
Preferably, wherein:
Described growth high temperature GaN cushion, be further:
After described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out at in-situ annealing
Reason, is increased to 1000 DEG C-1100 DEG C by annealing temperature, and annealing time is 5min-10min；
After having annealed, regulating temperature to 900 DEG C-1050 DEG C, growth pressure control is
400Torr-650Torr, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN of 0.2 μm-1 μm
Cushion, wherein, is passed through NH3With the mole of TMGa than for 500-3000.
Preferably, wherein:
The u-GaN layer of described growth undoped, be further:
Increase the temperature to 1050 DEG C-1200 DEG C, keep reaction chamber pressure 100Torr-500Torr, be passed through NH3
And TMGa, the undoped u-GaN layer of continued propagation 1 μm-3 μm, wherein, it is passed through NH3And TMGa
Mole than for 300-3000.
Preferably, wherein:
The n-GaN layer of described growth doping Si, be further:
Keeping reaction chamber temperature is 1050 DEG C-1200 DEG C, and keeping reaction chamber pressure is 100Torr-600Torr,
It is passed through NH3, TMGa and SiH4, continued propagation thickness is the n-GaN that the doping content of 2 μm-4 μm is stable
Layer, wherein, Si doping content 8E18atoms/cm3-2E19atoms/cm3, it is passed through NH3And TMGa
Mole than for 300-3000.
Preferably, wherein:
Described growth MQW MQW luminescent layer, be further:
It is passed through TEGa and TMIn as MO source, is passed through SiH4As N type dopant, grow 5-15
The In in individual cycleyGa(1-y)N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, it is passed through NH3With rubbing of TEGa
Your amount ratio is 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, wherein, is passed through NH3With the mole ratio of TEGa it is
300-5000, barrier layer GaN carries out low concentration Si doping, and Si component is 0.5%-3%；
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
Preferably, wherein:
Described growing P-type AlGaN layer, be further:
Keep reaction chamber pressure 20Torr-200Torr, temperature 900 DEG C-1100 DEG C, be passed through TMGa and
Cp2Mg, as MO source, is passed through TMAl, and continued propagation thickness is p-type AlGaN of 50nm-200nm
Layer, growth time is 3min-10min, wherein, is passed through NH3With the mole ratio of TMGa it is
The molar constituent of 1000-20000, Al be the molar constituent of 10%-30%, Mg be 0.05%-0.3%.
Preferably, wherein:
Described growth high temperature p-type GaN layer, be further:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1000 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is p-type GaN mixing Mg of 100nm-800nm
Layer, wherein, is passed through NH3With the mole of TMGa than for 300-5000, Mg doping content
1E17atoms/cm3-1E18atoms/cm3。
Preferably, wherein:
Described growth P-type GaN contact layer, be further:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1050 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is the p-type GaN contact layer of 5nm-20nm, its
In, it is passed through NH3With the mole of TMGa than for 1000-5000.
Preferably, wherein:
Described cooling down, be further:
After epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
Compared with prior art, method described herein, reach following effect:
The present invention improves the LED epitaxial growth method that hole is injected, compared with traditional method, in growth
After complete quantum well layer, grow one layer of InGaN:Mg Rotating fields mixing Mg with two sections of gradual changes of temperature,
Purpose is near quantum well region, first passes through low-temperature epitaxy to improve the concentration of Mg, thus provides high
Hole concentration, along with the distance from quantum well region increasingly away from, growth temperature gradual change promote, thus
Improve crystal mass, improve the mobility in hole, after uniform temperature, reduce temperature, improve Mg's
Concentration, it is provided that high hole concentration supplements the hole consumed before such that it is able to improve whole SQW
The hole Injection Level in region, reduces the running voltage of LED, improves the luminous efficiency of LED.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes of the application
Point, the schematic description and description of the application is used for explaining the application, is not intended that the application's
Improper restriction.In the accompanying drawings:
Fig. 1 is the flow chart that the present invention improves the LED epitaxial growth method that hole is injected；
Fig. 2 is the structural representation of LED epitaxial layer in the present invention；
Fig. 3 is the temperature in the present invention during the InGaN:Mg layer mixing Mg of two sections of gradual changes of growth temperature
Degree change schematic diagram；
Fig. 4 is the structural representation of LED epitaxial layer in comparative example；
Fig. 5 is the chip brightness scattergram of sample 1 and sample 2；
Fig. 6 is the chip voltage scattergram of sample 1 and sample 2；
Wherein, 1, high temperature p-type GaN layer, 2, electronic barrier layer, 3, p-type InGaN:Mg temperature
Graded bedding, 4, MQW MQW luminescent layer, 5, n-GaN layer, 6, u-GaN layer, 7, GaN
Cushion (includes low temperature nucleation layer and high temperature buffer layer), 8, substrate.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.This area skill
Art personnel are it is to be appreciated that hardware manufacturer may call same assembly with different nouns.This explanation
In the way of book and claim not difference by title is used as distinguishing assembly, but with assembly in function
On difference be used as distinguish criterion." bag as mentioned by the middle of description in the whole text and claim
Contain " it is an open language, therefore " comprise but be not limited to " should be construed to." substantially " refer to receivable
In range of error, those skilled in the art can solve described technical problem, base in the range of certain error
Originally described technique effect is reached.Additionally, " coupling " word comprises any directly and indirectly electrical coupling at this
Catcher section.Therefore, if a first device is coupled to one second device described in literary composition, then described first is represented
Device can directly be electrically coupled to described second device, or by other devices or to couple means the most electric
Property is coupled to described second device.Description subsequent descriptions is to implement the better embodiment of the application, so
For the purpose of described description is the rule so that the application to be described, it is not limited to scope of the present application.
The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
The present invention uses VEECO long high brightness GaN-based LED in MOCVD next life.Use
High-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As
N source, metal organic source trimethyl gallium (TMGa), metal organic source triethyl-gallium (TEGa), three
Methyl indium (TMIn) is as indium source, and trimethyl aluminium (TMAl) is as aluminum source, and N type dopant is silicon
Alkane (SiH4), P-type dopant is two cyclopentadienyl magnesium (CP2Mg), substrate is (001) surface sapphire, reaction
Pressure is between 100Torr to 1000Torr.Concrete growth pattern is following (epitaxial structure sees Fig. 2):
A kind of LED epitaxial growth method improving hole injection, sees Fig. 1, it is characterised in that successively
Including: process substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, grow non-mixing
Miscellaneous u-GaN layer, the n-GaN layer of growth doping Si, growth MQW MQW luminescent layer, life
Long two sections of gradual changes of temperature mix the InGaN:Mg layer of Mg, growing P-type AlGaN layer, growth high temperature P
Type GaN layer, growth P-type GaN contact layer, cooling down,
The InGaN:Mg layer mixing Mg of described two sections of gradual changes of growth temperature, be further:
It is passed through TMIn, TMGa and Cp to reaction chamber2Mg is as MO source, and is passed through NH3, growth
Thickness is the InGaN:Mg layer mixing Mg of two sections of gradual changes of one layer of temperature of 20nm-120nm, grows
Cheng Zhong, is first increased to temperature T2 by growth temperature from the gradual change of temperature T1, then by growth temperature from temperature
T2 gradual change is reduced to temperature T1, and temperature gradients figure sees Fig. 3, is existed by reaction chamber Stress control
100Torr-500Torr,
Wherein, T2 ＞ T1,700 DEG C of ＜ T1 ＜ 850 DEG C, 750 DEG C of ＜ T2 ＜ 900 DEG C, and T2 ＞ T1,
Growth temperature grew when T2 gradual change is reduced to T1 with growth temperature when T1 gradual change is increased to T2
The thickness of InGaN:Mg layer is identical, and thickness is 10nm-60nm, in growth course, is passed through NH3And TEGa
Mole be 0.3%-1% than the molar constituent for 300-5000, Mg, the molar constituent of In is
1%-10%.
The present invention improves the LED epitaxial growth method that hole is injected, and sends out at growth MQW MQW
After photosphere, before growing P-type AlGaN layer, the InGaN:Mg mixing Mg of two sections of gradual changes of growth temperature
Layer.Near quantum well region, first pass through low-temperature epitaxy to improve the concentration of Mg, thus provide high
Hole concentration, along with the distance from quantum well region increasingly away from, growth temperature gradual change promotes, thus carries
High-crystal quality, improves the mobility in hole, after uniform temperature, reduces temperature, improves the dense of Mg
Degree, it is provided that high hole concentration supplements the hole consumed before such that it is able to improve whole quantum well region
The hole Injection Level in territory, reduces the running voltage of LED, improves the luminous efficiency of LED.
Embodiment 2
The Application Example improving the LED epitaxial growth method that hole is injected of the present invention presented below,
Its epitaxial structure sees Fig. 2, and growing method sees Fig. 1.Use VEECO MOCVD length in next life highlighted
Degree GaN base LED.Use high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Mixing
Gas is as carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium (TMGa), metal
Organic source triethyl-gallium (TEGa), trimethyl indium (TMIn) is as indium source, trimethyl aluminium (TMAl)
As aluminum source, N type dopant is silane (SiH4), P-type dopant is two cyclopentadienyl magnesium (CP2Mg), lining
The end is (001) surface sapphire, and reaction pressure is between 100Torr to 1000Torr.The specifically side of growth
Formula is as follows:
Step 101, process substrate:
By Sapphire Substrate at H2Annealing in atmosphere, clean substrate surface, temperature is 1050 DEG C
-1150℃。
Step 102, growing low temperature GaN nucleating layer:
Reduction temperature, to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through NH3、
And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, wherein, is passed through NH3With
The mole of TMGa is 500-3000 than for 500-3000, i.e. V/ III mol ratio.
Step 103, growth high temperature GaN cushion:
After described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out at in-situ annealing
Reason, is increased to 1000 DEG C-1100 DEG C by annealing temperature, and annealing time is 5min-10min；
After having annealed, regulating temperature to 900 DEG C-1050 DEG C, growth pressure control is
400Torr-650Torr, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN of 0.2 μm-1 μm
Cushion, wherein, is passed through NH3With the mole of TMGa than for 500-3000, i.e. V/ III mol ratio
For 500-3000.
Step 104, the u-GaN layer of growth undoped:
Increase the temperature to 1050 DEG C-1200 DEG C, keep reaction chamber pressure 100Torr-500Torr, be passed through NH3
And TMGa, the undoped u-GaN layer of continued propagation 1 μm-3 μm, wherein, it is passed through NH3And TMGa
Mole be 300-3000 than for 300-3000, i.e. V/ III mol ratio.
Step 105, the n-GaN layer of growth doping Si:
Keeping reaction chamber temperature is 1050 DEG C-1200 DEG C, and keeping reaction chamber pressure is 100Torr-600Torr,
It is passed through NH3, TMGa and SiH4, continued propagation thickness is the n-GaN layer of the doping Si of 2 μm-4 μm,
Wherein, Si doping content 8E18atoms/cm3-2E19atoms/cm3, it is passed through NH3With rubbing of TMGa
Your amount is 300-3000 than for 300-3000, i.e. V/ III mol ratio.(wherein, 8E18 represents 8 and is multiplied by
18 powers of 10 i.e. 8*1018, by that analogy, atoms/cm3For doping content unit, lower with.)
Step 106, growth MQW MQW luminescent layer:
It is passed through TEGa, TMIn as MO source, is passed through SiH4As N type dopant, grow 5-15
The In in individual cycleyGa(1-y)N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, it is passed through rubbing of NH3 and TMGa
Your amount ratio is 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, and wherein, the mole ratio being passed through NH3 and TMGa is
300-5000, i.e. V/ III mol ratio be 300-5000, Si component be 0.5%-3%；
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
Step 107, the InGaN:Mg layer mixing Mg of two sections of gradual changes of growth temperature:
It is passed through TMIn, TMGa and Cp to reaction chamber2Mg is as MO source, and is passed through NH3, growth
Thickness is the InGaN:Mg layer mixing Mg of two sections of gradual changes of one layer of temperature of 20nm-120nm, grows
Cheng Zhong, is increased to temperature T2 by growth temperature from the gradual change of temperature T1, then is reduced to from the gradual change of temperature T2
Temperature T1, temperature gradients figure sees Fig. 3, by reaction chamber Stress control at 100Torr-500Torr,
Wherein, 700 DEG C of ＜ T1 ＜ 850 DEG C, 750 DEG C of ＜ T2 ＜ 900 DEG C, and T2 ＞ T1, such as T1 can
Electing 750 DEG C as, T2 is chosen as 850 DEG C, growth temperature will be increased to 850 DEG C from 750 DEG C of gradual changes, then
It is reduced to 750 DEG C from 850 DEG C of gradual changes；Additionally, growth temperature is when T1 gradual change is increased to T2 and growth
The thickness that temperature grows InGaN:Mg layer when T2 gradual change is reduced to T1 is identical, and thickness is
10nm-60nm, such as, temperature, when T1 gradual change is raised to T2, grows the thickness of InGaN:Mg layer
For 30nm, then temperature is when T2 gradual change is reduced to T1, and the thickness of growth InGaN:Mg layer is also
30nm；In growth course, it is passed through NH3With the mole of TEGa than for 300-5000, Mg mole
Component be the molar constituent of 0.3%-1%, In be 1%-10%.
Step 108, growing P-type AlGaN layer:
Keep reaction chamber pressure 20Torr-200Torr, temperature 900 DEG C-1100 DEG C, be passed through TMGa and
Cp2Mg is as MO source, and is passed through TMAl, and continued propagation thickness is p-type AlGaN of 50nm-200nm
Layer, growth time is 3min-10min, wherein, is passed through NH3With the mole ratio of TMGa it is
1000-20000, i.e. V/ III mol ratio be the molar constituent of 1000-20000, Al be 10%-30%, Mg
Molar constituent be 0.05%-0.3%.
Step 109, growth high temperature p-type GaN layer:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1000 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is p-type GaN mixing Mg of 100nm-800nm
Layer, wherein, is passed through NH3With the mole of TMGa than for 300-5000, i.e. V/ III mol ratio it is
300-5000, Mg doping content 1E18atoms/cm3-1E21atoms/cm3。
Step 110, growth P-type GaN contact layer:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1050 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is the p-type GaN contact layer of 5nm-20nm, its
In, it is passed through NH3With the mole of TMGa than for 1000-5000.
Step 111, cooling down:
After epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
The application focuses on step 107, after growth MQW MQW luminescent layer, growth
Before p-type AlGaN layer, the InGaN:Mg layer mixing Mg of two sections of gradual changes of growth temperature.Near amount
Sub-well area, first passes through low-temperature epitaxy to improve the concentration of Mg, thus provides high hole concentration, with
From quantum well region distance increasingly away from, growth temperature gradual change promotes, thus improves crystal mass,
Improve the mobility in hole, after uniform temperature, reduce temperature, improve the concentration of Mg, it is provided that high
Hole concentration supplements the hole consumed before such that it is able to the hole improving whole quantum well region is injected
Level, reduces the running voltage of LED, improves the luminous efficiency of LED.
Embodiment 3
Presented below a kind of conventional improve right as the present invention of the LED epitaxial growth method injected in hole
Compare embodiment.
The growing method of conventional LED extension is (epitaxial layer structure sees Fig. 4):
1, by Sapphire Substrate at H2Annealing in atmosphere, clean substrate surface, temperature is 1050 DEG C
-1150℃。
2, reduction temperature is to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through
NH3And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, and wherein, V/ III rubs
That ratio is 500-3000, is i.e. passed through NH3With the mole of TMGa than for 500-3000.
3, after described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out moving back in situ
Fire processes, and annealing temperature is increased to 1000 DEG C-1100 DEG C, and annealing time is 5min-10min；Annealing
After completing, regulating temperature to 900 DEG C-1050 DEG C, growth pressure controls to be 400Torr-650Torr, continues
Continuing and be passed through TMGa, epitaxial growth thickness is the high temperature GaN cushion of 0.2 μm-1 μm, wherein,
V/ III mol ratio is 500-3000.
4, after high temperature GaN buffer growth terminates, increase the temperature to 1050 DEG C-1200 DEG C, keep anti-
Answer cavity pressure 100Torr-500Torr, be passed through NH3And TMGa, non-the mixing of continued propagation 1 μm-3 μm
Miscellaneous u-GaN layer, wherein, V/ III mol ratio is 300-3000.
5, after the growth of high temperature undoped GaN layer terminates, keeping reaction chamber temperature is 1050 DEG C-1200 DEG C,
Keeping reaction chamber pressure is 100Torr-600Torr, is passed through NH3, TMGa and SiH4, continued propagation is thick
Degree is the n-GaN layer of the doping Si of 2 μm-4 μm, wherein, Si doping content
8E18atoms/cm3-2E19atoms/cm3, V/ III mol ratio is 300-3000.
6, TEGa, TMIn and SiH4 it are passed through as MO source, the In in 5-15 cycle of growthyGa(1-y)
N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, V/ III mol ratio be 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, and wherein V/ III mol ratio is that 300-5000, Si component is
0.5%-3%,
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
7, after multicycle SQW MQW light emitting layer grown terminates, reaction chamber pressure is kept
20Torr-200Torr, temperature 900 DEG C-1100 DEG C, is passed through TMAl, TMGa and Cp2Mg is as MO
Source, continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, and growth time is 3min-10min,
Wherein, V/ III mol ratio be the molar constituent of 1000-20000, Al be mole group of 10%-30%, Mg
It is divided into 0.05%-0.3%.
8, after the growth of p-type AlGaN layer terminates, reaction chamber pressure 100Torr-500Torr, growth are kept
Temperature is 850 DEG C-1000 DEG C, is passed through TMGa and Cp2Mg as MO source, continued propagation thickness is
The p-type GaN layer mixing Mg of 100nm-800nm, wherein, V/ III mol ratio is 300-5000, Mg
Doping content 1E17atoms/cm3-1E18atoms/cm3。
9, mix Mg p-type GaN layer growth terminate after, growth thickness is p-type GaN of 5nm-20nm
Contact layer, MO source used is TMGa and Cp2Mg, growth temperature is 850 DEG C-1050 DEG C, growth
Pressure be 100Torr-500Torr, V/ III mol ratio be 1000-5000.
10, after epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Enclose and carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
On same board, according to growing method (method of the comparative example) system of conventional LED
Standby sample 1, prepares sample 2 according to the method that this patent describes.Sample 1 and sample 2 epitaxial growth side
Method parameter difference is that the present invention is after growth MQW MQW luminescent layer, growing P-type
Before AlGaN layer, the InGaN:Mg layer mixing Mg of two sections of gradual changes of growth temperature, i.e. in embodiment 2
Step 107, grow the growth conditions just the same (seeing table 1) of other epitaxial layer.
Sample 1 plates ITO layer 150nm with sample 2 under identical front process conditions, then identical
Under the conditions of plate Cr/Pt/Au electrode 70nm, plating SiO under the same terms230nm, then identical
Under the conditions of sample grinding and cutting become the chip granule of 762 μm * 762 μm (30mil*30mil), then sample
1 and sample 2 each select 150 crystal grain in same position, under identical packaging technology, be packaged into
White light LEDs.Then integrating sphere test sample 1 and sample 2 under the conditions of driving electric current 350mA are used
Photoelectric properties.
Table 1 is the growth parameter(s) contrast table of sample 1 and sample 2, and sample 1 uses routine growth mode,
Growing electronic barrier layer after growth multiple quantum well layer, sample 2 uses the growth pattern of the application, in volume
The InGaN:Mg layer with two sections of temperature gradients of growing P-type between sub-well layer and electronic barrier layer.
The contrast of table 1 growth parameter(s)
Fig. 5 is the chip brightness scattergram of sample 1 and sample 2, and Fig. 6 is sample 1 and the core of sample 2
Sheet voltage distribution graph.
The data that integrating sphere obtains are analyzed contrast, draw Fig. 5 and Fig. 6.Can from Fig. 5 data
Going out, sample 2 relatively sample 1 brightness increases to 530mw from about 500mw.Can draw from Fig. 6 data,
Sample 2 relatively sample 1 driving voltage is reduced between 3.3-3.25V from about 3.4V.Therefore, can draw
Growing method provided herein, compared with conventional method, improves the brightness of chip, and can reduce
The driving voltage of chip.
By various embodiments above, the application exists and provides the benefit that:
The present invention improves the LED epitaxial growth method that hole is injected, compared with traditional method, in growth
After complete quantum well layer, grow one layer of InGaN:Mg Rotating fields mixing Mg with two sections of gradual changes of temperature,
Purpose is near quantum well region, first passes through low-temperature epitaxy to improve the concentration of Mg, thus provides high
Hole concentration, along with the distance from quantum well region increasingly away from, growth temperature gradual change promote, thus
Improve crystal mass, improve the mobility in hole, after uniform temperature, reduce temperature, improve Mg's
Concentration, it is provided that high hole concentration supplements the hole consumed before such that it is able to improve whole SQW
The hole Injection Level in region, reduces the running voltage of LED, improves the luminous efficiency of LED.
Those skilled in the art it should be appreciated that embodiments herein can be provided as method, device or
Computer program.Therefore, the application can use complete hardware embodiment, complete software implementation,
Or combine the form of embodiment in terms of software and hardware.And, the application can use one or more
The computer-usable storage medium wherein including computer usable program code (includes but not limited to disk
Memorizer, CD-ROM, optical memory etc.) form of the upper computer program implemented.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should reason
Solve the application and be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments,
And can be used for various other combination, amendment and environment, and can in invention contemplated scope described herein,
It is modified by above-mentioned teaching or the technology of association area or knowledge.And those skilled in the art are carried out changes
Move and change is without departing from spirit and scope, the most all should be in the protection of the application claims
In the range of.
Claims (10)
1. one kind is improved the LED epitaxial growth method that hole is injected, it is characterised in that include successively:
Process substrate, growing low temperature GaN nucleating layer, growth high temperature GaN cushion, growth undoped
U-GaN layer, growth doping Si n-GaN layer, growth MQW MQW luminescent layer, growth
Two sections of gradual changes of temperature mix the InGaN:Mg layer of Mg, growing P-type AlGaN layer, growth high temperature p-type
GaN layer, growth P-type GaN contact layer, cooling down,
The InGaN:Mg layer mixing Mg of described two sections of gradual changes of growth temperature, be further:
It is passed through TMIn, TMGa and Cp to reaction chamber2Mg is as MO source, and is passed through NH3, growth
Thickness is the InGaN:Mg layer mixing Mg of two sections of gradual changes of one layer of temperature of 20nm-120nm, grows
Cheng Zhong, is first increased to temperature T2 by growth temperature from the gradual change of temperature T1, then by growth temperature from temperature
T2 gradual change is reduced to temperature T1, by reaction chamber Stress control at 100Torr-500Torr,
Wherein, 700 DEG C of ＜ T1 ＜ 850 DEG C, 750 DEG C of ＜ T2 ＜ 900 DEG C, and T2 ＞ T1, growth temperature
When T2 gradual change is reduced to T1, InGaN:Mg layer is grown with growth temperature when T1 gradual change is increased to T2
Thickness identical, thickness is 10nm-60nm, in growth course, is passed through NH3Mole with TEGa
Being 0.3%-1% than the molar constituent for 300-5000, Mg, the molar constituent of In is 1%-10%.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
Described growing low temperature GaN nucleating layer, be further:
Reduction temperature, to 500 DEG C-620 DEG C, keeps reaction chamber pressure 400Torr-650Torr, is passed through NH3
And TMGa, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm, wherein, is passed through NH3With
The mole of TMGa is than for 500-3000.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
Described growth high temperature GaN cushion, be further:
After described growing low temperature GaN nucleating layer terminates, stop being passed through TMGa, carry out at in-situ annealing
Reason, is increased to 1000 DEG C-1100 DEG C by annealing temperature, and annealing time is 5min-10min；
After having annealed, regulating temperature to 900 DEG C-1050 DEG C, growth pressure control is
400Torr-650Torr, continues to be passed through TMGa, and epitaxial growth thickness is the high temperature GaN of 0.2 μm-1 μm
Cushion, wherein, is passed through NH3With the mole of TMGa than for 500-3000.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
The u-GaN layer of described growth undoped, be further:
Increase the temperature to 1050 DEG C-1200 DEG C, keep reaction chamber pressure 100Torr-500Torr, be passed through NH3
And TMGa, the undoped u-GaN layer of continued propagation 1 μm-3 μm, wherein, it is passed through NH3And TMGa
Mole than for 300-3000.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
The n-GaN layer of described growth doping Si, be further:
Keeping reaction chamber temperature is 1050 DEG C-1200 DEG C, and keeping reaction chamber pressure is 100Torr-600Torr,
It is passed through NH3, TMGa and SiH4, continued propagation thickness is the n-GaN that the doping content of 2 μm-4 μm is stable
Layer, wherein, Si doping content 8E18atoms/cm3-2E19atoms/cm3, it is passed through NH3And TMGa
Mole than for 300-3000.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
Described growth MQW MQW luminescent layer, be further:
It is passed through TEGa and TMIn as MO source, is passed through SiH4As N type dopant, grow 5-15
The In in individual cycleyGa(1-y)N/GaN trap builds structure composition, is further:
Keep reaction chamber pressure 100Torr-500Torr, temperature 700 DEG C-800 DEG C, the thickness of growth doping In
Degree is the In of 2nm-5nmyGa(1-y)N quantum well layer, y=0.1-0.3, it is passed through NH3With rubbing of TEGa
Your amount ratio is 300-5000；
Then liter high-temperature is to 800 DEG C-950 DEG C, keeps reaction chamber pressure 100Torr-500Torr, growth
Thickness is the GaN barrier layer of 8nm-15nm, wherein, is passed through NH3With the mole ratio of TEGa it is
300-5000, barrier layer GaN carries out low concentration Si doping, and Si component is 0.5%-3%；
Repeat InyGa(1-y)The growth of N quantum well layer, then repeats the growth of GaN barrier layer, the most raw
Long InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 5-15.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
Described growing P-type AlGaN layer, be further:
Keep reaction chamber pressure 20Torr-200Torr, temperature 900 DEG C-1100 DEG C, be passed through TMGa and
Cp2Mg, as MO source, is passed through TMAl, and continued propagation thickness is p-type AlGaN of 50nm-200nm
Layer, growth time is 3min-10min, wherein, is passed through NH3With the mole ratio of TMGa it is
The molar constituent of 1000-20000, Al be the molar constituent of 10%-30%, Mg be 0.05%-0.3%.
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
Described growth high temperature p-type GaN layer, be further:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1000 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is p-type GaN mixing Mg of 100nm-800nm
Layer, wherein, is passed through NH3With the mole of TMGa than for 300-5000, Mg doping content
1E17atoms/cm3-1E18atoms/cm3。
The most according to claim 1, improve the LED epitaxial growth method that hole is injected, its feature exists
In,
Described growth P-type GaN contact layer, be further:
Keeping reaction chamber pressure 100Torr-500Torr, growth temperature is 850 DEG C-1050 DEG C, is passed through TMGa
And Cp2Mg is as MO source, and continued propagation thickness is the p-type GaN contact layer of 5nm-20nm, its
In, it is passed through NH3With the mole of TMGa than for 1000-5000.
Improve the LED epitaxial growth method that hole is injected, its feature the most according to claim 1
It is,
Described cooling down, be further:
After epitaxial growth terminates, the temperature of reative cell is reduced to 650 DEG C-800 DEG C, uses pure N2Atmosphere
Carry out making annealing treatment 5min-10min, the most near room temperature, terminate growth.
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