CN106328494A - LED epitaxial growing method improving luminous efficiency - Google Patents

LED epitaxial growing method improving luminous efficiency Download PDF

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CN106328494A
CN106328494A CN201610834399.2A CN201610834399A CN106328494A CN 106328494 A CN106328494 A CN 106328494A CN 201610834399 A CN201610834399 A CN 201610834399A CN 106328494 A CN106328494 A CN 106328494A
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徐平
林传强
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

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Abstract

The application discloses an LED epitaxial growing method improving luminous efficiency, which comprises the steps of processing a substrate, growing a low-temperature GaN nucleation layer, growing a high-temperature buffer layer GaN, growing a non-doped u-GaN layer, growing a Si-doped n-GaN layer, growing a light-emitting layer, growing a p-type AlGaN layer, growing a high-temperature p-type GaN layer, growing a p-type GaN contact layer, and cooling. In the growing process of the high-temperature p-type GaN layer, the traditional p-type GaN layer is designed into a super-lattice structure grown at high Mg concentration and at low Mg concentration alternately. The purpose is to provide more holes by increasing the Mg concentration first and then to improve the quality of material crystallization and the hole mobility by decreasing the Mg concentration. Through alternate super-lattice growth, the hole injection level of a quantum well region is improved, the working voltage of LED is reduced, and the luminous efficiency of LED is improved.

Description

Improve the LED epitaxial growth method of light efficiency
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to a kind of LED extension improving light efficiency Growing method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting at present, and volume is little, power consumption Low service life long high brightness, environmental protection, the advantage such as sturdy and durable approved by consumers in general, the scale of domestic production LED is also Progressively expanding；On market, the demand to LED luminance and light efficiency grows with each passing day, and client is concerned with LED more power saving, and brightness is more Height, light efficiency are more preferable, and this just has higher requirement for LED epitaxial growth；How to grow more preferable epitaxial wafer and be increasingly subject to weight Depending on, because the raising of epitaxial layer crystal mass, the performance of LED component can get a promotion, the luminous efficiency of LED, the life-span, anti-ageing Change ability, antistatic effect, stability can promote along with the lifting of epitaxial layer crystal mass.
Requiring now on LED market that LED chip driving voltage is low, under the biggest electric current, driving voltage is the smaller the better, light Imitate the highest more good；LED market value be presented as (light efficiency)/unit price, light efficiency is the best, and price is the highest, so LED specular removal is always It is LED producer and target that universities and colleges' LED institute is pursued.Specular removal means that luminous power is high, driving voltage is low, but luminous power Being limited by P layer hole concentration to a certain extent, driving voltage is limited by P layer hole mobility to a certain extent, note The hole concentration entered increases, and the combined efficiency of luminescent layer hole and electronics increases, and high luminous power increases, and P layer hole mobility increases Add driving voltage could reduce.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED epitaxial growth side improving light efficiency Method, traditional p-type GaN layer, is designed as the superlattice structure of Mg concentration level doped growing, it is therefore an objective to dense by first improving Mg Degree, it is provided that relatively multi-hole, further through reducing Mg concentration, improves material crystalline quality, improves hole mobility, by super the most brilliant Lattice grow, thus improve the hole Injection Level of quantum well region, reduce the running voltage of LED, improve the luminous efficiency of LED.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of LED epitaxial growth method improving light efficiency, it is characterised in that include successively: process substrate, growing low temperature GaN nucleating layer, growth high temperature buffer layer GaN, growth undoped u-GaN layer, growth doping Si n-GaN layer, growth luminescent layer, Growth p-type AlGaN layer, growth high temperature p-type GaN layer, growth p-type GaN contact layer, cooling down,
Described growth high temperature p-type GaN layer, particularly as follows:
By TMGa and CP2Mg is as MO source, and keeping reaction chamber pressure is 100Torr-500Torr, and growth temperature is 850 DEG C-1000 DEG C,
First it is passed through the CP that flow is 0sccm-200sccm2Mg, growth thickness is a GaN:Mg layer of 2nm-10nm；
It is passed through the CP that flow is 200sccm-1000sccm again2Mg, growth thickness is the 2nd GaN:Mg layer of 2nm-10nm；
Repeatedly growing a described GaN:Mg layer and described 2nd GaN:Mg layer, growth cycle is 2-50, described first The gross thickness of GaN:Mg layer and described 2nd GaN:Mg layer is 40nm-200nm, and wherein, Mg doping content is 1018cm-3- 1020cm-3。
Preferably, wherein:
Described growing low temperature GaN nucleating layer, particularly as follows: drop to 500 DEG C-620 DEG C at a temperature of Jiang, is passed through NH3And TMGa, protect Holding reaction chamber pressure 400Torr-650Torr, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm.
Preferably, wherein:
Described growth high temperature buffer layer GaN, particularly as follows:
After the growth of low temperature GaN nucleating layer terminates, stopping being passed through TMGa, carry out in-situ annealing process, annealing temperature is increased to 1000 DEG C-1100 DEG C, annealing time is 5min-10min；
After annealing, temperature is regulated to 900 DEG C-1050 DEG C, keep reaction chamber pressure 400Torr-650Torr, continue Being passed through TMGa, epitaxial growth thickness is the high temperature buffer layer GaN of 0.2 μm-1 μm.
Preferably, wherein:
Described growth undoped u-GaN layer, particularly as follows:
After high temperature buffer layer GaN growth terminates, it is passed through NH3And TMGa, keeping temperature is 1050 DEG C-1200 DEG C, keeps anti- Answering cavity pressure 100Torr-500Torr, growth thickness is the undoped u-GaN layer of 1 μm-3 μm.
Preferably, wherein:
The N-type GaN layer of described growth doping Si, particularly as follows:
After high temperature undoped u-GaN layer growth terminates, it is passed through NH3, TMGa and SiH4, grow one layer of doping content stable N-GaN layer, thickness is 2 μm-4 μm, and growth temperature is 1050 DEG C-1200 DEG C, and growth pressure is that 100Torr-600Torr, Si mix Miscellaneous concentration is 8E18atoms/cm3-2E19atoms/cm3。
Preferably, wherein:
Described growth luminescent layer, particularly as follows:
After the n-GaN layer growth of doping Si terminates, it is passed through TEGa, TMIn and SiH4As MO source, grow 5-15 cycle InyGa1-y/ GaN trap base structure, wherein,
SQW InyGa1-y(y=0.1-0.3) thickness of layer is 2nm-5nm, and growth temperature is 700 DEG C-800 DEG C, growth Pressure is 100Torr-500Torr,
The thickness of barrier layer GaN is 8nm-15nm, and growth temperature is 800 DEG C-950 DEG C, and growth pressure is 100Torr- 500Torr, in barrier layer, the doping content of Si is 8E16atoms/cm3-6E17atoms/cm3。
Preferably, wherein:
Described growth p-type AlGaN layer, particularly as follows:
Keeping reaction chamber pressure 20Torr-200Torr, growth temperature 900 DEG C-1100 DEG C, growth time is 3min- 10min, is passed through TMAl, TMGa and Cp2Mg is as MO source, and continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, wherein, The molar constituent of Al be 10%-30%, Mg doping content be 1E18atoms/cm3-1E21atoms/cm3。
Preferably, wherein:
Described growth p-type GaN contact layer, particularly as follows:
Keep reaction chamber pressure 100Torr-500Torr, growth temperature 850 DEG C-1050 DEG C, be passed through TEGa and Cp2Mg makees For MO source, the p-type GaN contact layer of continued propagation 5nm-20nm, Mg doping content 1E19atoms/cm3-1E22atoms/cm3。
Preferably, wherein:
Described cooling down, particularly as follows:
The temperature of reative cell is down to 650 DEG C-800 DEG C, uses pure N2Atmosphere carries out making annealing treatment 5min-10min, then It is down to room temperature, terminates growth.
Compared with prior art, method described herein, reach following effect:
The present invention improves the LED epitaxial growth method of light efficiency, compared with traditional method, traditional p-type GaN layer, design Superlattice structure for the growth of Mg concentration level, it is therefore an objective to by first improving Mg concentration, it is provided that relatively multi-hole, further through reducing Mg Concentration, improves material crystalline quality, improves hole mobility, by alternately superlattice growth, thus improves quantum well region Hole Injection Level, reduces the running voltage of LED, and then improves the luminous efficiency of LED.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes the part of the application, this Shen Schematic description and description please is used for explaining the application, is not intended that the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the flow chart that the present invention improves the LED epitaxial growth method of light efficiency；
Fig. 2 is the structural representation of LED epitaxial layer in the present invention；
Fig. 3 is the structural representation of LED epitaxial layer in comparative example；
Fig. 4 is 30mil*30mil chip brightness scattergram；
Fig. 5 is 30mil*30mil chip voltage scattergram；
Wherein, 1, substrate, 2, cushion GaN, 3, U-shaped GaN layer, 4, n-type GaN layer, 5, mqw light emitting layer, 6, p-type AlGaN layer, 7, the high temperature p-type GaN layer of Mg concentration level growth, 7.1, high Mg concentration GaN layer, 7.2, low Mg concentration GaN layer, 8, Mg:GaN contact layer, 9, common high temperature p-type GaN layer.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.Those skilled in the art should It is understood that hardware manufacturer may call same assembly with different nouns.This specification and claims are not with name The difference claimed is used as distinguishing the mode of assembly, but is used as the criterion distinguished with assembly difference functionally.As logical " comprising " mentioned in the middle of piece description and claim is an open language, therefore should be construed to " comprise but do not limit In "." substantially " referring in receivable range of error, those skilled in the art can solve described in the range of certain error Technical problem, basically reaches described technique effect.Additionally, " coupling " word comprises any directly and indirectly electric property coupling at this Means.Therefore, if a first device is coupled to one second device described in literary composition, then representing described first device can direct electrical coupling It is connected to described second device, or is indirectly electrically coupled to described second device by other devices or the means that couple.Description Subsequent descriptions is to implement the better embodiment of the application, for the purpose of right described description is the rule so that the application to be described, It is not limited to scope of the present application.The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
The present invention uses VEECO long high brightness GaN-based LED in MOCVD next life.Use high-purity H2Or high-purity N2Or it is high Pure H2And high-purity N2The mixed gas of (purity 99.999%) is as carrier gas, high-purity N H3(purity 99.999%) is as N source, metal Organic source trimethyl gallium (TMGa) and triethyl-gallium (TEGa) are as gallium source, and trimethyl indium (TMIn) is as indium source, N type dopant For silane (SiH4), trimethyl aluminium (TMAl) is as aluminum source, and P-type dopant is two cyclopentadienyl magnesium (CP2Mg), substrate is that (001) face indigo plant is precious Stone, reaction pressure is between 100Torr to 1000Torr.Concrete growth pattern is as follows:
A kind of LED epitaxial growth method improving light efficiency, sees Fig. 1, includes successively: process substrate, growing low temperature GaN becomes Stratum nucleare, growth high temperature buffer layer GaN, growth undoped u-GaN layer, the n-GaN layer of growth doping Si, growth luminescent layer, growth p Type AlGaN layer, growth high temperature p-type GaN layer, growth p-type GaN contact layer, cooling down,
Described growth high temperature p-type GaN layer, particularly as follows:
By TMGa and CP2Mg is as MO source, and keeping reaction chamber pressure is 100Torr-500Torr, and growth temperature is 850 DEG C-1000 DEG C,
First it is passed through the CP that flow is 0sccm-200sccm2Mg, growth thickness is a GaN:Mg layer of 2nm-10nm；
It is passed through the CP that flow is 200sccm-1000sccm again2Mg, growth thickness is the 2nd GaN:Mg layer of 2nm-10nm；
Repeatedly growing a described GaN:Mg layer and described 2nd GaN:Mg layer, growth cycle is 2-50, described first The gross thickness of GaN:Mg layer and described 2nd GaN:Mg layer is 40nm-200nm, and wherein, Mg doping content is 1018cm-3- 1020cm-3。
The present invention improves the LED epitaxial growth method of light efficiency, compared with traditional method, traditional p-type GaN layer, design For the superlattice structure of Mg concentration level growth, first it is passed through the CP of high flow capacity (flow is 0sccm-200sccm)2Mg growth first GaN:Mg layer, then it is passed through the CP of low discharge (flow is 200sccm-1000sccm)2Mg grows the 2nd GaN:Mg layer, a GaN: The concentration of Mg layer is high, and the concentration of the 2nd GaN:Mg layer is low, it is therefore an objective to by first improving Mg concentration, it is provided that relatively multi-hole, further through Reduce Mg concentration, improve material crystalline quality, improve hole mobility, by alternately superlattice growth, thus improve SQW The hole Injection Level in region, reduces the running voltage of LED, and then improves the luminous efficiency of LED.
Embodiment 2
The Application Example of the LED epitaxial growth method improving light efficiency of the present invention presented below, its epitaxial structure sees Fig. 2, growing method sees Fig. 1.Use high-purity H2Or high-purity N2Or high-purity H2And high-purity N2The mixed gas of (purity 99.999%) As carrier gas, high-purity N H3(purity 99.999%) is as N source, metal organic source trimethyl gallium (TMGa) and triethyl-gallium (TEGa) as gallium source, trimethyl indium (TMIn) is as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is made For aluminum source, P-type dopant is two cyclopentadienyl magnesium (CP2Mg), substrate is (001) surface sapphire, and reaction pressure arrives at 100Torr Between 1000Torr.Concrete growth pattern is as follows:
Step 101, process substrate:
Sapphire Substrate being annealed in hydrogen atmosphere, clean substrate surface, temperature is 1050 DEG C-1150 DEG C.
Step 102, growing low temperature GaN nucleating layer:
Drop to 500 DEG C-620 DEG C at a temperature of Jiang, be passed through NH3And TMGa, keep reaction chamber pressure 400Torr-650Torr, Growth thickness is the low temperature GaN nucleating layer of 20nm-40nm.
Step 103, growth high temperature buffer layer GaN:
After the growth of low temperature GaN nucleating layer terminates, stopping being passed through TMGa, carry out in-situ annealing process, annealing temperature is increased to 1000 DEG C-1100 DEG C, annealing time is 5min-10min；
After annealing, temperature is regulated to 900 DEG C-1050 DEG C, keep reaction chamber pressure 400Torr-650Torr, continue Be passed through TMGa, epitaxial growth thickness is the high temperature buffer layer GaN of 0.2 μm-1 μm.
Step 104, growth undoped u-GaN layer:
After high temperature buffer layer GaN growth terminates, it is passed through NH3And TMGa, keeping temperature is 1050 DEG C-1200 DEG C, keeps anti- Answering cavity pressure 100Torr-500Torr, growth thickness is the undoped u-GaN layer of 1 μm-3 μm.
Step 105, the n-GaN layer of growth doping Si:
After high temperature undoped u-GaN layer growth terminates, it is passed through NH3, TMGa and SiH4, grow one layer of doping content stable N-GaN layer, thickness is 2 μm-4 μm, and growth temperature is 1050 DEG C-1200 DEG C, and growth pressure is that 100Torr-600Torr, Si mix Miscellaneous concentration is 8E18atoms/cm3-2E19atoms/cm3。
Step 106, grown quantum trap MQW luminescent layer:
After the n-GaN layer growth of doping Si terminates, it is passed through TEGa, TMIn and SiH4As MO source, grow 5-15 cycle InyGa1-y/ GaN trap base structure, wherein,
SQW InyGa1-y(y=0.1-0.3) thickness of layer is 2nm-5nm, and growth temperature is 700 DEG C-800 DEG C, growth Pressure is 100Torr-500Torr,
The thickness of barrier layer GaN is 8nm-15nm, and growth temperature is 800 DEG C-950 DEG C, and growth pressure is 100Torr- 500Torr, in barrier layer, the doping content of Si is 8E16atoms/cm3-6E17atoms/cm3。
Step 107, growth p-type AlGaN layer:
Keeping reaction chamber pressure 20Torr-200Torr, growth temperature 900 DEG C-1100 DEG C, growth time is 3min- 10min, is passed through TMAl, TMGa and Cp2Mg is as MO source, and continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, wherein, The molar constituent of Al is 10%-30%, Mg doping content 1E18atoms/cm3-1E21atoms/cm3。
Step 108, growth high temperature p-type GaN layer:
After the growth of p-type AlGaN layer terminates, by TMGa and CP2Mg is as MO source, and keeping reaction chamber pressure is 100Torr- 500Torr, growth temperature is 850 DEG C-1000 DEG C,
First it is passed through the CP that flow is 0sccm-200sccm2Mg, growth thickness is a GaN:Mg layer of 2nm-10nm；
It is passed through the CP that flow is 200sccm-1000sccm again2Mg, growth thickness is the 2nd GaN:Mg layer of 2nm-10nm；
Repeatedly growing a described GaN:Mg layer and described 2nd GaN:Mg layer, growth cycle is 2-50, described first The gross thickness of GaN:Mg layer and described 2nd GaN:Mg layer is 40nm-200nm, and wherein, Mg doping content is 1018cm-3- 1020cm-3。
Step 109, growth p-type GaN contact layer:
After the growth of p-type GaN layer terminates, keep reaction chamber pressure 100Torr-500Torr, growth temperature 850 DEG C-1050 DEG C, it is passed through TEGa and Cp2Mg is as MO source, the p-type GaN contact layer of continued propagation 5nm-20nm, i.e. Mg:GaN, Mg doping content 1E19atoms/cm3-1E22atoms/cm3。
Step 110, cooling down:
After epitaxial growth terminates, the temperature of reative cell is down to 650 DEG C-800 DEG C, uses pure N2Atmosphere makes annealing treatment 5min-10min, is then down to room temperature, terminates growth.
Epitaxial structure makes single small size core through Subsequent semiconductor processing technique such as over cleaning, deposition, photoetching and etchings Sheet.
In the above-mentioned steps 108 of the application, traditional p-type GaN layer is designed as the superlattices knot of Mg concentration level growth Structure, it is therefore an objective to by first improving Mg concentration, it is provided that relatively multi-hole, further through reducing Mg concentration, improves material crystalline quality, improves Hole mobility, by alternately superlattice growth, thus improves the hole Injection Level of quantum well region, reduces the work of LED Voltage, improves the luminous efficiency of LED.
Embodiment 3
The LED epitaxial growth method of a kind of routine presented below is as the comparative example of the present invention.
The growing method of conventional LED extension is (epitaxial layer structure sees Fig. 3):
1, Sapphire Substrate being annealed in hydrogen atmosphere, clean substrate surface, temperature is 1050-1150 DEG C.
2, drop to 500-620 DEG C at a temperature of inciting somebody to action, be passed through NH3And TMGa, the low temperature GaN nucleating layer that growth 20-40nm is thick, raw Long pressure is 400-650Torr.
3, after the growth of low temperature GaN nucleating layer terminates, stopping being passed through TMGa, carry out in-situ annealing process, annealing temperature raises To 1000-1100 DEG C, annealing time is 5-10min；After annealing, temperature is regulated to 900-1050 DEG C, continues to be passed through TMGa, Epitaxial growth thickness is the high temperature GaN cushion between 0.2-1um, and growth pressure is 400-650Torr.
4, after high temperature GaN buffer growth terminates, it is passed through NH3And TMGa, growth thickness is the u-GaN of 1-3um undoped Layer, growth course temperature is 1050-1200 DEG C, and growth pressure is 100-500Torr.
5, after the growth of high temperature undoped GaN layer terminates, it is passed through NH3, TMGa and SiH4, grow one layer of doping content stable N-GaN layer, thickness is 2-4um, and growth temperature is 1050-1200 DEG C, and growth pressure is that 100-600Torr, Si doping content is 8*1018-2*1019cm-3。
6, n-GaN growth terminate after, grow multicycle SQW MQW luminescent layer, MO source used be TEGa, TMIn and SiH4.Luminescent layer MQW is by the In in 5-15 cycleyGa1-yN/GaN trap builds structure composition, wherein SQW InyGa1-yN(y =0.1-0.3) thickness of layer is 2-5nm, growth temperature is 700-800 DEG C, and growth pressure is 100-500Torr；Wherein barrier layer The thickness of GaN is 8-15nm, and growth temperature is 800-950 DEG C, and growth pressure is 100-500Torr, and barrier layer GaN carries out low concentration Si adulterates, and Si doping content is 8*1016-6*1017cm-3。
7, after multicycle SQW MQW light emitting layer grown terminates, growth thickness is the p-type AlGaN layer of 50-200nm, used MO source is TMAl, TMGa and CP2Mg.Growth temperature is 900-1100 DEG C, and growth time is 3-10min, and pressure is at 20- 200Torr, the molar constituent of the Al of p-type AlGaN layer be 10%-30%, Mg doping content be 1018-1021cm-3。
8, after the growth of p-type AlGaN layer terminates, growing high temperature p-type GaN layer, MO source used is TMGa and CP2Mg.Growth thickness Degree is 100-800nm, and growth temperature is 850-1000 DEG C, and growth pressure is 100-500Torr, and Mg doping content is 1018- 1021cm-3。
9, after the growth of p-type GaN layer terminates, growth thickness is the p-type GaN contact layer of 5-20nm, i.e. Mg:GaN, MO source used For TEGa and CP2Mg.Growth temperature is 850-1050 DEG C, growth pressure be 100-500Torr, Mg doping content be 1019- 1022cm-3。
10, after epitaxial growth terminates, the temperature of reative cell is down to 650-800 DEG C, uses pure nitrogen gas atmosphere to anneal Process 5-10min, be then down to room temperature, terminate growth.Epitaxial structure is partly led through over cleaning, deposition, photoetching and etching etc. are follow-up Body processing technology makes single small-size chips.
On same board, prepare sample 1 according to the growing method (method of comparative example) of conventional LED, according to The method that this patent describes prepares sample 2；Sample 1 and sample 2 epitaxial growth method parameter difference are that the present invention is tradition P-type GaN layer, be designed as the superlattice structure of Mg concentration level doped growing, other outer layer growth condition is just the same, ginseng It is shown in Table 1.
Sample 1 plates ITO layer about 150nm under identical front process conditions with sample 2, identical under conditions of plate Cr/Pt/Au Electrode about 70nm, identical under conditions of plating SiO2About 30nm, becomes sample grinding and cutting the most at identical conditions The chip granule of 762 μm * 762 μm (30mil*30mil), then sample 1 and sample 2 each select 150 crystalline substances in same position Grain, under identical packaging technology, is packaged into white light LEDs.Then integrating sphere test specimens under the conditions of driving electric current 350mA is used Product 1 and the photoelectric properties of sample 2.
Table 1 is sample 1 and sample 2 growth parameter(s) contrast table.Sample 1 is conventional growth mode, grows single p-type GaN layer； Sample 2 is this patent growth pattern, and tradition p-type GaN layer changes into the superlattice layer of the Mg concentration level doping in 10 cycles.
Table 1 growth parameter(s) contrasts
The data that integrating sphere obtains being analyzed contrast, refer to Fig. 4 and Fig. 5, can be seen that from Fig. 4 data, sample 2 is relatively Sample 1 brightness increases to about 515mw from about 500mw, can be seen that from Fig. 5 data, sample 2 relatively sample 1 driving voltage from 3.325V be reduced to about 3.275V.Experimental data demonstrates the scheme of this patent and improves the brightness of large size chip and reduce Driving voltage.
By various embodiments above, the application exists and provides the benefit that:
The present invention improves the LED epitaxial growth method of light efficiency, compared with traditional method, traditional p-type GaN layer, design Superlattice structure for the growth of Mg concentration level, it is therefore an objective to by first improving Mg concentration, it is provided that relatively multi-hole, further through reducing Mg Concentration, improves material crystalline quality, improves hole mobility, by alternately superlattice growth, thus improves quantum well region Hole Injection Level, reduces the running voltage of LED, and then improves the luminous efficiency of LED.
Those skilled in the art are it should be appreciated that embodiments herein can be provided as method, device or computer program Product.Therefore, the reality in terms of the application can use complete hardware embodiment, complete software implementation or combine software and hardware Execute the form of example.And, the application can use at one or more computers wherein including computer usable program code The upper computer program product implemented of usable storage medium (including but not limited to disk memory, CD-ROM, optical memory etc.) The form of product.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should be understood that the application Be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments, and can be used for other combinations various, Amendment and environment, and can be in invention contemplated scope described herein, by above-mentioned teaching or the technology of association area or knowledge It is modified.And the change that those skilled in the art are carried out and change are without departing from spirit and scope, the most all should be in this Shen Please be in the protection domain of claims.

Claims (9)

1. the LED epitaxial growth method improving light efficiency, it is characterised in that include successively: process substrate, growing low temperature GaN Nucleating layer, growth high temperature buffer layer GaN, growth undoped u-GaN layer, the n-GaN layer of growth doping Si, growth luminescent layer, life Long p-type AlGaN layer, growth high temperature p-type GaN layer, growth p-type GaN contact layer, cooling down,
Described growth high temperature p-type GaN layer, particularly as follows:
By TMGa and CP2Mg is as MO source, and keeping reaction chamber pressure is 100Torr-500Torr, and growth temperature is 850 DEG C-1000 DEG C,
First it is passed through the CP that flow is 0sccm-200sccm2Mg, growth thickness is a GaN:Mg layer of 2nm-10nm；
It is passed through the CP that flow is 200sccm-1000sccm again2Mg, growth thickness is the 2nd GaN:Mg layer of 2nm-10nm；
Repeatedly growing a described GaN:Mg layer and described 2nd GaN:Mg layer, growth cycle is 2-50, a described GaN:Mg The gross thickness of layer and described 2nd GaN:Mg layer is 40nm-200nm, and wherein, Mg doping content is 1018cm-3-1020cm-3。
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described growing low temperature GaN nucleating layer, particularly as follows: drop to 500 DEG C-620 DEG C at a temperature of Jiang, is passed through NH3And TMGa, keep anti- Answering cavity pressure 400Torr-650Torr, growth thickness is the low temperature GaN nucleating layer of 20nm-40nm.
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described growth high temperature buffer layer GaN, particularly as follows:
After the growth of low temperature GaN nucleating layer terminates, stopping being passed through TMGa, carry out in-situ annealing process, annealing temperature is increased to 1000 DEG C-1100 DEG C, annealing time is 5min-10min；
After annealing, temperature is regulated to 900 DEG C-1050 DEG C, keep reaction chamber pressure 400Torr-650Torr, continue to be passed through TMGa, epitaxial growth thickness is the high temperature buffer layer GaN of 0.2 μm-1 μm.
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described growth undoped u-GaN layer, particularly as follows:
After high temperature buffer layer GaN growth terminates, it is passed through NH3And TMGa, keeping temperature is 1050 DEG C-1200 DEG C, keeps reaction chamber pressure Power 100Torr-500Torr, growth thickness is the undoped u-GaN layer of 1 μm-3 μm.
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
The N-type GaN layer of described growth doping Si, particularly as follows:
After high temperature undoped u-GaN layer growth terminates, it is passed through NH3, TMGa and SiH4, grow the n-GaN that one layer of doping content is stable Layer, thickness is 2 μm-4 μm, and growth temperature is 1050 DEG C-1200 DEG C, and growth pressure is 100Torr-600Torr, Si doping content For 8E18atoms/cm3-2E19atoms/cm3。
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described growth luminescent layer, particularly as follows:
After the n-GaN layer growth of doping Si terminates, it is passed through TEGa, TMIn and SiH4As MO source, 5-15 the cycle of growth InyGa1-y/ GaN trap base structure, wherein,
SQW InyGa1-y(y=0.1-0.3) thickness of layer is 2nm-5nm, and growth temperature is 700 DEG C-800 DEG C, growth pressure For 100Torr-500Torr,
The thickness of barrier layer GaN is 8nm-15nm, and growth temperature is 800 DEG C-950 DEG C, and growth pressure is 100Torr-500Torr, In barrier layer, the doping content of Si is 8E16atoms/cm3-6E17atoms/cm3。
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described growth p-type AlGaN layer, particularly as follows:
Keeping reaction chamber pressure 20Torr-200Torr, growth temperature 900 DEG C-1100 DEG C, growth time is 3min-10min, logical Enter TMAl, TMGa and Cp2Mg is as MO source, and continued propagation thickness is the p-type AlGaN layer of 50nm-200nm, wherein, Al mole Component be 10%-30%, Mg doping content be 1E18atoms/cm3-1E21atoms/cm3。
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described growth p-type GaN contact layer, particularly as follows:
Keep reaction chamber pressure 100Torr-500Torr, growth temperature 850 DEG C-1050 DEG C, be passed through TEGa and Cp2Mg is as MO Source, the p-type GaN contact layer of continued propagation 5nm-20nm, Mg doping content 1E19atoms/cm3-1E22atoms/cm3。
Improve the LED epitaxial growth method of light efficiency the most according to claim 1, it is characterised in that
Described cooling down, particularly as follows:
The temperature of reative cell is down to 650 DEG C-800 DEG C, uses pure N2Atmosphere carries out making annealing treatment 5min-10min, is then down to Room temperature, terminates growth.
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