CN105742419A - Growth method for Novel LED epitaxial P layer - Google Patents
Growth method for Novel LED epitaxial P layer Download PDFInfo
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- CN105742419A CN105742419A CN201610217569.2A CN201610217569A CN105742419A CN 105742419 A CN105742419 A CN 105742419A CN 201610217569 A CN201610217569 A CN 201610217569A CN 105742419 A CN105742419 A CN 105742419A
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- 230000012010 growth Effects 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000006641 stabilisation Effects 0.000 claims description 4
- 238000011105 stabilization Methods 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- 230000004913 activation Effects 0.000 abstract description 6
- 239000011777 magnesium Substances 0.000 description 30
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The invention discloses a growth method for a novel LED epitaxial P layer. Growth of an Mg-doped P layer further comprises the steps as follows: NH3, TMIn, H2 and Cp2Mg are introduced to grow 5-10nm InyMg(1-y)N layer; the value range of y is that y is smaller than 1 and greater than 0.05; NH3, TMGa, H2 and 1,000sccm-3,000sccm of Cp2Mg are introduced to grow 5-10nm pGaN; the doping concentration of Mg is 1E19atoms/cm<3> to 1E20atoms/cm<3>; an InyMg(1-y)N/pGaN superlattice layer repeatedly and periodically grows; the cycle number is 10-20; and the growth orders of the InyMg(1-y)N layer and the pGaN layer can be replaced. According to the scheme, the doping efficiency and the activation efficiency of Mg can be greatly improved; and the brightness of an LED is effectively improved.
Description
Technical field
The application relates to LED epitaxial scheme applied technical field, specifically, relates to a kind of LED extension new P layer growth side
Method.
Background technology
At present LED is a kind of solid state lighting, and volume is little, power consumption long high brightness in low service life, environmental protection, sturdy and durable etc.
Advantage is approved by consumers in general, and the scale of domestic production LED is also progressively expanding；To LED luminance and light efficiency on market
Demand grows with each passing day, and how to grow more preferable epitaxial wafer and is increasingly subject to pay attention to, because the raising of epitaxial layer crystal mass, LED device
The performance of part can get a promotion, and the luminous efficiency of LED, life-span, ageing resistance, antistatic effect, stability can be along with outward
Prolong the lifting of layer crystal weight and promote.
Traditional LED extension P layer method for designing hole concentration is the highest, and luminance raising is constantly subjected to limit.Therefore, how to carry
High LED luminance becomes problem demanding prompt solution.
Summary of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED extension new P layer growth method, fortune
Use InyMg(1-y)N/pGaN superlattice layer, can significantly promote doping efficiency and the activation efficiency of Mg, and hole concentration gets a promotion,
Brightness is promoted further therewith.
In order to solve above-mentioned technical problem, the application has a following technical scheme:
A kind of LED extension new P layer growth method, includes successively: processes substrate, low temperature growth buffer layer GaN, grow and do not mix
Miscellaneous GaN layer, the growth doping N-type GaN layer of Si, the In of alternating growth doping InxGa(1-x)N/GaN luminescent layer, growing P-type AlGaN
Layer, the P layer of growth doping Mg, cooling down, it is characterised in that
The P layer of described growth doping Mg is further:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMIn, 100L/min-130L/min of 500sccm-1000sccm2、1000sccm-3000sccm
Cp2The In of Mg growth 5nm-10nmyMg(1-y)N shell, the span of y: 0.05 < y < 1；
Keep reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, to be passed through flow be 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2Mg, the doping content of the pGaN, Mg of growth 5nm-10nm is 1E19atoms/cm3-1E20atoms/cm3；
Repetition period property growth InyMg(1-y)N/pGaN superlattice layer, periodicity is 10-20, grows InyMg(1-y)N shell and
The order of pGaN layer is replaceable.
Preferably, wherein, described process substrate is further: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through 100L/
The H of min-130L/min2, keep reaction chamber pressure 100mbar-300mbar, process Sapphire Substrate 8min-10min.
Preferably, wherein, described low temperature growth buffer layer GaN is further: be cooled to 500 DEG C-600 DEG C, keeps reaction
Cavity pressure 300mbar-600mbar, is passed through the NH that flow is 10000sccm-20000sccm3, 50sccm-100sccm
The H of TMGa, 100L/min-130L/min2, on a sapphire substrate growth thickness be the low temperature buffer layer GaN of 20nm-40nm；
Liter high-temperature, to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure 300mbar-600mbar, and being passed through flow is 30000sccm-
The NH of 40000sccm3, the H of 100L/min-130L/min2, keep temperature stabilization continue 300s-500s, by low temperature buffer layer GaN
Corrode into irregular island.
Preferably, wherein, the described growth GaN layer that undopes is further: increase the temperature to 1000 DEG C-1200 DEG C, keeps
Reaction chamber pressure 300mbar-600mbar, is passed through the NH that flow is 30000sccm-40000sccm3、200sccm-400sccm
The H of TMGa, 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
Preferably, wherein, the N-type GaN layer of described growth doping Si is further: keep reaction chamber pressure, temperature-resistant,
It is passed through the NH that flow is 30000sccm-60000sccm3, TMGa, 100L/min-130L/min of 200sccm-400sccm
H2, the SiH of 20sccm-50sccm4, N-type GaN of continued propagation 3 μm-4 μm doping Si, Si doping content 5E18atoms/cm3-
1E19atoms/cm3；Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、
The H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, the SiH of 2sccm-10sccm4, continued propagation 200 μm-
N-type GaN of 400 μm doping Si, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
Preferably, wherein, the In of described alternating growth doping InxGa(1-x)N/GaN luminescent layer is further: keep reaction
Cavity pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, is passed through the NH that flow is 50000sccm-70000sccm3、
The N of TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm2, growth doping In
The In of 2.5nm-3.5nmxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；Then high-temperature is risen to 750
DEG C-850 DEG C, keep reaction chamber pressure 300mbar-400mbar, be passed through the NH that flow is 50000sccm-70000sccm3、
The N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, the GaN layer of growth 8nm-15nm；Repeat InxGa(1-x)N
Growth, then repeat the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 7-15.
Preferably, wherein, described growing P-type AlGaN layer is further: holding reaction chamber pressure 200mbar-400mbar,
Temperature 900 DEG C-950 DEG C, is passed through the NH that flow is 50000sccm-70000sccm3, TMGa, 100L/ of 30sccm-60sccm
The H of min-130L/min2, the Cp of TMAl, 1000sccm-1300sccm of 100sccm-130sccm2Mg, continued propagation 50nm-
The p-type AlGaN layer of 100nm, Al doping content 1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/
cm3-1E20atoms/cm3。
Preferably, wherein, described cooling down is further: be cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, connects
Closedown heating system, close to gas system, furnace cooling.
Compared with prior art, method described herein, reach following effect:
In LED extension of the present invention new P layer growth method, use new material InyMg(1-y)N/pGaN superlattice layer is as newly
P layer, utilize the atom active of In to reduce the activation energy of Mg, the activation efficiency of Mg be substantially improved, hole concentration promotes therewith, and
And InyMg(1-y)N material Mg doping efficiency is the highest；New material introduces and changes the low Mg doping efficiency of tradition p layer in the past, low
Hole concentration situation；The utilization of new material makes LED luminance promote, and various aspects of performance also gets a promotion
Accompanying drawing explanation
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes the part of the application, this Shen
Schematic description and description please is used for explaining the application, is not intended that the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the structural representation of LED epitaxial layer in the embodiment of the present invention 1；
Fig. 2 is the structural representation of LED epitaxial layer in comparative example 1；
Wherein, 1, substrate, 2, low temperature GaN buffer, 3, U-shaped GaN layer, 4, N-type GaN layer, 5, InxGa(1-x)N, 6, GaN,
7, p-type AlGaN, 8, InyMg(1-y)N, 9, P GaN, 56, luminescent layer, 89, superlattice layer.
Detailed description of the invention
As employed some vocabulary in the middle of description and claim to censure specific components.Those skilled in the art should
It is understood that hardware manufacturer may call same assembly with different nouns.This specification and claims are not with name
The difference claimed is used as distinguishing the mode of assembly, but is used as the criterion distinguished with assembly difference functionally.As logical
" comprising " mentioned in the middle of piece description and claim is an open language, therefore should be construed to " comprise but do not limit
In "." substantially " referring in receivable range of error, those skilled in the art can solve described in the range of certain error
Technical problem, basically reaches described technique effect.Additionally, " coupling " word comprises any directly and indirectly electric property coupling at this
Means.Therefore, if a first device is coupled to one second device described in literary composition, then representing described first device can direct electrical coupling
It is connected to described second device, or is indirectly electrically coupled to described second device by other devices or the means that couple.Description
Subsequent descriptions is to implement the better embodiment of the application, for the purpose of right described description is the rule so that the application to be described,
It is not limited to scope of the present application.The protection domain of the application is when being as the criterion depending on the defined person of claims.
Embodiment 1
Seeing Fig. 1, see Fig. 1, the present invention uses long high brightness GaN-based LED in MOCVD next life.Use high-purity H2
Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium
(TMGa) as gallium source, trimethyl indium (TMIn) is as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is made
For aluminum source, P-type dopant is two cyclopentadienyl magnesium (CP2Mg), substrate is (0001) surface sapphire, and reaction pressure arrives at 70mbar
Between 900mbar.Concrete growth pattern is as follows:
A kind of LED extension new P layer growth method, includes successively: processes substrate, low temperature growth buffer layer GaN, grow and do not mix
Miscellaneous GaN layer, the growth doping N-type GaN layer of Si, the In of alternating growth doping InxGa(1-x)N/GaN luminescent layer, growing P-type AlGaN
Layer, the P layer of growth doping Mg, cooling down, particularly as follows:
Process substrate, be further: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2,
Keep reaction chamber pressure 100mbar-300mbar, process Sapphire Substrate 8min-10min.
Low temperature growth buffer layer GaN, is: be cooled to 500 DEG C-600 DEG C to keep reaction chamber pressure 300mbar-further
600mbar, is passed through TMGa, 100L/min-of NH3,50sccm-100sccm that flow is 10000sccm-20000sccm
The H of 130L/min2, on a sapphire substrate growth thickness be the low temperature buffer layer GaN of 20nm-40nm；Rise high-temperature to 1000
DEG C-1100 DEG C, keep reaction chamber pressure 300mbar-600mbar, be passed through the NH that flow is 30000sccm-40000sccm3、
The H of 100L/min-130L/min2, keep temperature stabilization continue 300s-500s, low temperature buffer layer GaN is corroded into the least
Island.
Grow the GaN layer that undopes, be further: increase the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure
300mbar-600mbar, is passed through the NH that flow is 30000sccm-40000sccm3, the TMGa of 200sccm-400sccm,
The H of 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
The N-type GaN layer of growth doping Si, be further: keeping reaction chamber pressure, temperature-resistant, being passed through flow is
The NH of 30000sccm-60000sccm3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2、20sccm-
The SiH of 50sccm4, N-type GaN of continued propagation 3 μm-4 μm doping Si, Si doping content 5E18atoms/cm3-1E19atoms/
cm3；Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
The H of TMGa, 100L/min-130L/min2, the SiH of 2sccm-10sccm4, the N-type of continued propagation 200 μm-400 μm doping Si
GaN, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
The In of alternating growth doping InxGa(1-x)N/GaN luminescent layer, be further: keep reaction chamber pressure 300mbar-
400mbar, temperature 700 DEG C-750 DEG C, is passed through the NH that flow is 50000sccm-70000sccm3, 20sccm-40sccm
The N of TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm2, the 2.5nm-3.5nm's of growth doping In
InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；Then liter high-temperature is to 750 DEG C-850 DEG C, keeps anti-
Answer cavity pressure 300mbar-400mbar, be passed through the NH that flow is 50000sccm-70000sccm3, 20sccm-100sccm
The N of TMGa, 100L/min-130L/min2, the GaN layer of growth 8nm-15nm；Repeat the growth of InxGa (1-x) N, then repeat
The growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, controlling periodicity is 7-15.
Growing P-type AlGaN layer, be further: keep reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950
DEG C, it is passed through the NH that flow is 50000sccm-70000sccm3, TMGa, 100L/min-130L/min of 30sccm-60sccm
H2, the Cp of TMAl, 1000sccm-1300sccm of 100sccm-130sccm2Mg, p-type AlGaN of continued propagation 50nm-100nm
Layer, Al doping content 1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3。
The P layer of Mg is mixed in growth, is further:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMIn, 100L/min-130L/min of 500sccm-1000sccm2、1000sccm-3000sccm
Cp2The In of Mg growth 5nm-10nmyMg(1-y)N shell, the span of y: 0.05 < y < 1；
Keep reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, to be passed through flow be 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2Mg, the doping content of the pGaN, Mg of growth 5nm-10nm is 1E19atoms/cm3-1E20atoms/cm3；
Repetition period property growth InyMg(1-y)N/pGaN superlattice layer, periodicity is 10-20, grows InyMg(1-y)N shell and
The order of pGaN layer is replaceable.
Cooling down, be further: be cooled to 650 DEG C-680 DEG C, be incubated 20min-30min, be then switched off heating system,
Close to gas system, furnace cooling.
Comparative example 1
The growing method of traditional LED epitaxial layer that comparative example 1 provides is (epitaxial layer structure sees Fig. 2):
1, at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction chamber pressure
100mbar-300mbar, processes Sapphire Substrate 8min-10min.
2, at being cooled to 500-600 DEG C, keeping reaction chamber pressure 300mbar-600mbar, being passed through flow is
The NH of 10000sccm-20000sccm3, the H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, sapphire serve as a contrast
, growth thickness is the low temperature buffer layer GaN of 20nm-40nm at the end.Liter high-temperature, to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure
300mbar-600mbar, is passed through the NH that flow is 30000sccm-40000sccm3, the H of 100L/min-130L/min2, keep
Temperature stabilization continues 300s-500s, and low temperature buffer layer GaN is corroded into irregular island.
3, increasing the temperature to 1000 DEG C-1200 DEG C, keep reaction chamber pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, the H of TMGa, 100L/min-130L/min of 200sccm-400sccm2, continued propagation 2
The GaN layer that undopes of μm-4 μm.
4, keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, continued propagation 3 μm-4 μm doping Si
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3(1E19 represent 10 19 powers, namely 1019,
5E18 represents 5 × 1018, following presentation mode is by that analogy).
5, keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 2sccm-10sccm4, continued propagation 200nm-400nm adulterates
N-type GaN of Si, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
6, keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm
N2, the In of the 2.5nm-3.5nm of growth doping InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；Connect
Liter high-temperature to 750 DEG C-850 DEG C, keep reaction chamber pressure 300mbar-400mbar, being passed through flow is 50000sccm-
The NH of 70000sccm3, the N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, the GaN layer of growth 8nm-15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, controls periodicity
For 7-15.
7, keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 30sccm-60sccm2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1800sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
8, keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-200nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3。
9, finally it is cooled to 650 DEG C-680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas system
System, furnace cooling.
Growing method (method of comparative example 1) according to traditional LED prepares sample 1, describes according to this patent
Method prepares sample 2；Sample 1 and sample 2 epitaxial growth method parameter difference are present invention InyMg(1-y)N/pGaN surpasses
Lattice layer substitutes traditional P layer, grows other outer layer growth condition just the same；Sample 1 with sample 2 in identical front technique
Under the conditions of plate ITO layer about 150nm, identical under conditions of plate Cr/Pt/Au electrode about 1500nm, identical under conditions of plating
SiO2About 100nm, becomes the chip of 635 μm * 635 μm (25mil*25mil) the most at identical conditions by sample grinding and cutting
Granule, then sample 1 and sample 2 each select 100 crystal grain in same position, under identical packaging technology, are packaged into white
Light LED.Then integrating sphere test sample 1 and photoelectric properties of sample 2 under the conditions of driving electric current 350mA are used.Table 1 below is
The contrast table of growth parameter(s), table 2 is the comparison form of product unit for electrical property parameters.
The contrast of table 1 light emitting layer grown parameter
The comparison of table 2 sample 1,2 product electrical parameter
The data that integrating sphere obtains are analyzed comparison, see table 2, it is seen then that growing method LED that the present invention provides is bright
Degree is promoted to 600.29MW from 540.66MW, and other every LED electrical parameters also improve.Therefore, experimental data demonstrates this
The scheme of bright offer can promote the feasibility of LED product brightness and crystal mass.
Compared with prior art, method described herein, reach following effect:
In LED extension of the present invention new P layer growth method, use new material InyMg(1-y)N/pGaN superlattice layer is as newly
P layer, utilize the atom active of In to reduce the activation energy of Mg, the activation efficiency of Mg be substantially improved, hole concentration promotes therewith, and
And InyMg(1-y)N material Mg doping efficiency is the highest；New material introduces and changes the low Mg doping efficiency of tradition p layer in the past, low
Hole concentration situation；The utilization of new material makes LED luminance promote, and various aspects of performance also gets a promotion.
Those skilled in the art are it should be appreciated that embodiments herein can be provided as method, device or computer program
Product.Therefore, the reality in terms of the application can use complete hardware embodiment, complete software implementation or combine software and hardware
Execute the form of example.And, the application can use at one or more computers wherein including computer usable program code
The upper computer program product implemented of usable storage medium (including but not limited to disk memory, CD-ROM, optical memory etc.)
The form of product.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned, it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the eliminating to other embodiments, and can be used for other combinations various,
Amendment and environment, and can be in invention contemplated scope described herein, by above-mentioned teaching or the technology of association area or knowledge
It is modified.And the change that those skilled in the art are carried out and change are without departing from spirit and scope, the most all should be in this Shen
Please be in the protection domain of claims.
Claims (8)
1. a LED extension new P layer growth method, includes successively: process substrate, low temperature growth buffer layer GaN, growth undope
GaN layer, the growth doping N-type GaN layer of Si, the In of alternating growth doping InxGa(1-x)N/GaN luminescent layer, growing P-type AlGaN
Layer, the P layer of growth doping Mg, cooling down, it is characterised in that
The P layer of described growth doping Mg is further:
Keeping reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMIn, 100L/min-130L/min of 500sccm-1000sccm2、1000sccm-3000sccm
Cp2The In of Mg growth 5nm-10nmyMg(1-y)N shell, the span of y: 0.05 < y < 1；
Keep reaction chamber pressure 400mbar-900mbar, temperature 950 DEG C-1000 DEG C, to be passed through flow be 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 20sccm-100sccm2, 1000sccm-3000sccm
Cp2Mg, the doping content of the pGaN, Mg of growth 5nm-10nm is 1E19atoms/cm3-1E20atoms/cm3；
Repetition period property growth InyMg(1-y)N/pGaN superlattice layer, periodicity is 10-20, grows InyMg(1-y)N shell and pGaN
The order of layer is replaceable.
LED extension new P layer growth method the most according to claim 1, it is characterised in that
Described process substrate is further: at the H of 1000 DEG C-1100 DEG C2Under atmosphere, it is passed through the H of 100L/min-130L/min2,
Keep reaction chamber pressure 100mbar-300mbar, process Sapphire Substrate 8min-10min.
LED extension new P layer growth method the most according to claim 1, it is characterised in that
Described low temperature growth buffer layer GaN is further:
Being cooled to 500 DEG C-600 DEG C, keep reaction chamber pressure 300mbar-600mbar, being passed through flow is 10000sccm-
The NH of 20000sccm3, the H of TMGa, 100L/min-130L/min of 50sccm-100sccm2, grow thickness on a sapphire substrate
Degree is the low temperature buffer layer GaN of 20nm-40nm；
Liter high-temperature, to 1000 DEG C-1100 DEG C, keeps reaction chamber pressure 300mbar-600mbar, and being passed through flow is
The NH of 30000sccm-40000sccm3, the H of 100L/min-130L/min2, keep temperature stabilization continue 300s-500s, by low
Temperature cushion GaN corrodes into irregular island.
LED extension new P layer growth method the most according to claim 1, it is characterised in that
The described growth GaN layer that undopes is further: increase the temperature to 1000 DEG C-1200 DEG C, keeps reaction chamber pressure
300mbar-600mbar, is passed through the NH that flow is 30000sccm-40000sccm3, the TMGa of 200sccm-400sccm,
The H of 100L/min-130L/min2, the GaN layer that undopes of continued propagation 2 μm-4 μm.
LED extension new P layer growth method the most according to claim 4, it is characterised in that
The N-type GaN layer of described growth doping Si is further:
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
The H of TMGa, 100L/min-130L/min2, the SiH of 20sccm-50sccm4, the N-type of continued propagation 3 μm-4 μm doping Si
GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3；
Keep reaction chamber pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
The H of TMGa, 100L/min-130L/min2, the SiH of 2sccm-10sccm4, the N-type of continued propagation 200 μm-400 μm doping Si
GaN, Si doping content 5E17atoms/cm3-1E18atoms/cm3。
LED extension new P layer growth method the most according to claim 1, it is characterised in that
The In of described alternating growth doping InxGa(1-x)N/GaN luminescent layer is further:
Keeping reaction chamber pressure 300mbar-400mbar, temperature 700 DEG C-750 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, TMIn, 100L/min-130L/min of TMGa, 1500sccm-2000sccm of 20sccm-40sccm
N2, the In of the 2.5nm-3.5nm of growth doping InxGa(1-x)N shell, x=0.20-0.25, emission wavelength 450nm-455nm；
Then liter high-temperature is to 750 DEG C-850 DEG C, keeps reaction chamber pressure 300mbar-400mbar, and being passed through flow is
The NH of 50000sccm-70000sccm3, the N of TMGa, 100L/min-130L/min of 20sccm-100sccm2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, controls week
Issue is 7-15.
LED extension new P layer growth method the most according to claim 1, it is characterised in that
Described growing P-type AlGaN layer is further:
Keeping reaction chamber pressure 200mbar-400mbar, temperature 900 DEG C-950 DEG C, being passed through flow is 50000sccm-
The NH of 70000sccm3, the H of TMGa, 100L/min-130L/min of 30sccm-60sccm2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3。
LED extension new P layer growth method the most according to claim 1, it is characterised in that
Described cooling down is further: be cooled to 650 DEG C-680 DEG C, be incubated 20min-30min, be then switched off heating system,
Close to gas system, furnace cooling.
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