CN105845788B - A kind of LED current extension layer epitaxial growth method - Google Patents
A kind of LED current extension layer epitaxial growth method Download PDFInfo
- Publication number
- CN105845788B CN105845788B CN201610216722.XA CN201610216722A CN105845788B CN 105845788 B CN105845788 B CN 105845788B CN 201610216722 A CN201610216722 A CN 201610216722A CN 105845788 B CN105845788 B CN 105845788B
- Authority
- CN
- China
- Prior art keywords
- growth
- layer
- doping
- gan
- passed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
This application discloses LED current extension layer epitaxial growth method, include successively：Processing substrate, low temperature growth buffer layer GaN, grow the GaN layer that undopes, growth doping Si N-type GaN layer, alternating growth doping In InxGa(1‑x)N/GaN luminescent layers, growing P-type AlGaN layer, growth doping Mg p-type GaN layer, cooling down, growth also include growth Si after adulterating Si N-type GaN layerxAl(1‑x)N/SiyGa(1‑y)N superlattice layers.The present invention enables to LED N layer CURRENT DISTRIBUTIONs to be improved, and then make it that LED luminous intensity is improved, and various aspects of performance gets a promotion.
Description
Technical field
The application is related to LED epitaxial scheme applied technical fields, specifically, is related to a kind of LED current extension layer extension
Growing method.
Background technology
LED is a kind of solid state lighting at present, the long high brightness of the low service life of small volume, power consumption, environmental protection, sturdy and durable etc.
Advantage is approved that domestic production LED scale is also progressively expanding by consumers in general；In the market is to LED luminance and light efficiency
Demand is growing day by day, how to grow more preferable epitaxial wafer and is increasingly subject to pay attention to, because the raising of epitaxial layer crystal mass, LED devices
The performance of part can get a promotion, and LED luminous efficiency, life-span, ageing resistance, antistatic effect, stability can be with outer
Prolong the lifting of layer crystal weight and lifted.
The N layer CURRENT DISTRIBUTIONs of traditional sapphire LED epitaxial growths are uneven, cause current crowding N layer resistances to uprise, lead
The uneven luminous efficiency of electroluminescent layer CURRENT DISTRIBUTION is not high.
The content of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED current extension layer epitaxially grown side
Method, it enables to LED N layer CURRENT DISTRIBUTIONs to be improved, and then make it that LED luminous intensity is improved, each side
It can get a promotion.
In order to solve the above-mentioned technical problem, the application has following technical scheme：
A kind of LED current extension layer epitaxial growth method, includes successively：Handle substrate, low temperature growth buffer layer GaN, life
The long GaN layer that undopes, growth doping Si N-type GaN layer, alternating growth doping In InxGa(1-x)N/GaN luminescent layers, growth P
The p-type GaN layer of type AlGaN layer, growth doping Mg, cooling down, it is characterised in that after the N-type GaN layer of the growth doping Si
Also include growth SixAl(1-x)N/SiyGa(1-y)N superlattice layers,
The growth SixAl(1-x)N/SiyGa(1-y)N superlattice layers are further：
Reaction cavity pressure 150mbar-300mbar is kept, 1000 DEG C -1100 DEG C of keeping temperature, being passed through flow is
30000sccm-60000sccm NH3, 100L/min-130L/min H2, 100sccm-200sccm TMAl, 10sccm-
20sccm SiH4, grow SixAl(1-x)N, Si doping concentration 1E18atoms/cm3-5E18atoms/cm3；
Reaction cavity pressure 150mbar-300mbar is kept, 1000 DEG C -1100 DEG C of keeping temperature, being passed through flow is
30000sccm-60000sccm NH3, 200sccm-400sccm TMGa, 100L/min-130L/min H2、10sccm-
20sccm SiH4, grow SiyGa(1-y)N superlattice layers, Si doping concentrations 1E18atoms/cm3-5E18atoms/cm3；
Cyclical growth SixAl(1-x)N and SiyGa(1-y)N superlattice layers, growth cycle 10-20, grow SixAl(1-x)N
And SiyGa(1-y)The order of N superlattice layers is replaceable.
Preferably, wherein, the processing substrate is further：In 1000 DEG C -1100 DEG C of H2Under atmosphere, 100L/ is passed through
Min-130L/min H2, keep reaction cavity pressure 100mbar-300mbar, processing Sapphire Substrate 8min-10min.
Preferably, wherein, the low temperature growth buffer layer GaN is further：500 DEG C -600 DEG C are cooled to, keeps reaction
Cavity pressure 300mbar-600mbar, it is passed through the NH that flow is 10000sccm-20000sccm3, 50sccm-100sccm
TMGa, 100L/min-130L/min H2, on a sapphire substrate growth thickness be 20nm-40nm low temperature buffer layer GaN；
Temperature is raised to 1000 DEG C -1100 DEG C, keeps reaction cavity pressure 300mbar-600mbar, it is 30000sccm- to be passed through flow
40000sccm NH3,100L/min-130L/min H2, keeping temperature stably continue 300s-500s, by low temperature buffer layer
GaN corrodes into irregular island.
Preferably, wherein, the GaN layer that undopes that grows is further：1000 DEG C -1200 DEG C are increased the temperature to, is kept
Cavity pressure 300mbar-600mbar is reacted, is passed through the NH that flow is 30000sccm-40000sccm3、200sccm-400sccm
TMGa, 100L/min-130L/min H2, 2 μm -4 μm of continued propagation the GaN layer that undopes.
Preferably, wherein, the N-type GaN layer of the growth doping Si is further：Reaction cavity pressure, temperature-resistant is kept,
It is passed through the NH that flow is 30000sccm-60000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min
H2, 20sccm-50sccm SiH4, 3 μm of -4 μm of doping Si of continued propagation N-type GaN, Si doping concentration 5E18atoms/cm3-
1E19atoms/cm3；Reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000sccm-60000sccm3、
200sccm-400sccm TMGa, 100L/min-130L/min H2, 2sccm-10sccm SiH4, 200 μm of continued propagation-
400 μm of doping Si N-type GaN, Si doping concentration 5E17atoms/cm3-1E18atoms/cm3。
Preferably, wherein, the alternating growth adulterates In InxGa(1-x)N/GaN luminescent layers are further：Keep reaction
700 DEG C -750 DEG C of cavity pressure 300mbar-400mbar, temperature, it is passed through the NH that flow is 50000sccm-70000sccm3、
20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min N2, growth doping In
2.5nm-3.5nm InxGa(1-x)N layers, x=0.20-0.25, emission wavelength 450nm-455nm；Then temperature is raised to 750
DEG C -850 DEG C, reaction cavity pressure 300mbar-400mbar is kept, is passed through the NH that flow is 50000sccm-70000sccm3、
20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-15nm GaN layer；Repeat InxGa(1-x)N
Growth, then repeatedly GaN growth, alternating growth InxGa(1-x)N/GaN luminescent layers, controlling cycle number are 7-15.
Preferably, wherein, the growing P-type AlGaN layer is further：Holding reaction cavity pressure 200mbar-400mbar,
900 DEG C -950 DEG C of temperature, it is passed through the NH that flow is 50000sccm-70000sccm3, 30sccm-60sccm TMGa, 100L/
Min-130L/min H2, 100sccm-130sccm TMAl, 1000sccm-1300sccm Cp2Mg, continued propagation 50nm-
100nm p-type AlGaN layer, Al doping concentrations 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentrations 1E19atoms/
cm3-1E20atoms/cm3。
Preferably, wherein, the p-type GaN layer that Mg is mixed in the growth is further：Keep reaction cavity pressure 400mbar-
950 DEG C -1000 DEG C of 900mbar, temperature, it is passed through the NH that flow is 50000sccm-70000sccm3, 20sccm-100sccm
TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm Cp2Mg, continued propagation 50nm-100nm's mixes Mg's
P-type GaN layer, Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3。
Preferably, wherein, the cooling down is further：650 DEG C -680 DEG C are cooled to, 20min-30min is incubated, connects
Closing heating system, closes and gives gas system, furnace cooling.
Compared with prior art, method described herein, following effect has been reached：
In LED current extension layer epitaxial growth method of the present invention, using new material SixAl(1-x)N/SiyGa(1-y)N is super brilliant
Compartment, the high energy band by the use of A1N are built as gesture, stop that electronics is too fast more crowded by N Es-region propagations to luminescent layer, longitudinal propagation
Electronics runs into the stop of A1N energy bands, and appropriate horizontal proliferation is come；Si simultaneouslyxAl(1-x)N/SiyGa(1-y)N superlattice layers are formed
The two-dimensional electron gas of high concentration, the lateral transfer rate of two-dimensional electron gas is very high, accelerates the extending transversely of electronics, macroscopically electric current
Pass through SixAl(1-x)N/SiyGa(1-y)Effectively spread during N superlattice layers, what is therewith improved is point of luminescent layer electric current
Cloth becomes uniform, new material with causing LED luminous intensities to improve, various aspects of performance can get a promotion.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding of the present application, forms the part of the application, this Shen
Schematic description and description please is used to explain the application, does not form the improper restriction to the application.In the accompanying drawings：
Fig. 1 is the structural representation of LED epitaxial layers in the embodiment of the present invention 1；
Fig. 2 is the structural representation of LED epitaxial layers in comparative example 1；
Wherein, 1, substrate, 2, low temperature GaN buffer, 3, U-shaped GaN layer, 4, N-type GaN layer, 5, SixAl(1-x)N, 6,
SiyGa(1-y)N, 7, superlattice layer, 8, InxGa(1-x)N, 9, GaN, 10, luminescent layer, 11, p-type AlGaN, 12, p-type GaN.
Embodiment
Some vocabulary has such as been used to censure specific components among specification and claim.Those skilled in the art should
It is understood that hardware manufacturer may call same component with different nouns.This specification and claims are not with name
The difference of title is used as the mode for distinguishing component, but is used as the criterion of differentiation with the difference of component functionally.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer in receivable error range, those skilled in the art can be described within a certain error range solution
Technical problem, basically reach the technique effect.In addition, " coupling " one word is herein comprising any direct and indirect electric property coupling
Means.Therefore, if the first device of described in the text one is coupled to a second device, representing the first device can directly electrical coupling
The second device is connected to, or the second device is electrically coupled to indirectly by other devices or coupling means.Specification
Subsequent descriptions for implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application,
It is not limited to scope of the present application.The protection domain of the application is worked as to be defined depending on appended claims institute defender.
Embodiment 1
Referring to Fig. 1, referring to Fig. 1, the present invention uses MOCVD next life long high brightness GaN-based LED.Using high-purity H2
Or high-purity N2Or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N sources, metal organic source trimethyl gallium
(TMGa) gallium source is used as, trimethyl indium (TMIn) is used as indium source, and N type dopant is silane (SiH4), trimethyl aluminium (TMAl) is made
For silicon source, P-type dopant is two luxuriant magnesium (CP2Mg), substrate is (0001) surface sapphire, and reaction pressure arrives in 70mbar
Between 900mbar.Specific growth pattern is as follows：
A kind of LED current extension layer epitaxial growth method, includes successively：Handle substrate, low temperature growth buffer layer GaN, life
The long GaN layer that undopes, growth doping Si N-type GaN layer, alternating growth doping In InxGa(1-x)N/GaN luminescent layers, growth P
The p-type GaN layer of type AlGaN layer, growth doping Mg, cooling down,
Above-mentioned processing substrate is further：In 1000 DEG C -1100 DEG C of H2Under atmosphere, 100L/min-130L/min is passed through
H2, keep reaction cavity pressure 100mbar-300mbar, processing Sapphire Substrate 8min-10min.
Above-mentioned low temperature growth buffer layer GaN be further：500 DEG C -600 DEG C are cooled to, keeps reaction cavity pressure
300mbar-600mbar, it is passed through the NH that flow is 10000sccm-20000sccm3, 50sccm-100sccm TMGa, 100L/
Min-130L/min H2, on a sapphire substrate growth thickness be 20nm-40nm low temperature buffer layer GaN；Raise temperature extremely
1000 DEG C -1100 DEG C, reaction cavity pressure 300mbar-600mbar is kept, it is 30000sccm-40000sccm's to be passed through flow
NH3,100L/min-130L/min H2, keeping temperature stably continue 300s-500s, by low temperature buffer layer GaN corrosion into not advising
Then island.
The above-mentioned growth GaN layer that undopes is further：1000 DEG C -1200 DEG C are increased the temperature to, keeps reaction cavity pressure
300mbar-600mbar, it is passed through the NH that flow is 30000sccm-40000sccm3, 200sccm-400sccm TMGa,
100L/min-130L/min H2, 2 μm -4 μm of continued propagation the GaN layer that undopes.
Above-mentioned growth doping Si N-type GaN layer is further：Reaction cavity pressure, temperature-resistant is kept, being passed through flow is
30000sccm-60000sccm NH3, 200sccm-400sccm TMGa, 100L/min-130L/min H2、20sccm-
50sccm SiH4, 3 μm of -4 μm of doping Si of continued propagation N-type GaN, Si doping concentration 5E18atoms/cm3-1E19atoms/
cm3；Reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
TMGa, 100L/min-130L/min H2, 2sccm-10sccm SiH4, 200 μm of -400 μm of doping Si of continued propagation N-type
GaN, Si doping concentration 5E17atoms/cm3-1E18atoms/cm3。
Also include growth Si after above-mentioned growth doping Si N-type GaN layerxAl(1-x)N/SiyGa(1-y)N superlattice layers, it is above-mentioned
Grow SixAl(1-x)N/SiyGa(1-y)N superlattice layers are further：
Reaction cavity pressure 150mbar-300mbar is kept, 1000 DEG C -1100 DEG C of keeping temperature, being passed through flow is
30000sccm-60000sccm NH3, 100L/min-130L/min H2, 100sccm-200sccm TMAl, 10sccm-
20sccm SiH4, grow SixAl(1-x)N, Si doping concentration 1E18atoms/cm3-5E18atoms/cm3；
Reaction cavity pressure 150mbar-300mbar is kept, 1000 DEG C -1100 DEG C of keeping temperature, being passed through flow is
30000sccm-60000sccm NH3, 200sccm-400sccm TMGa, 100L/min-130L/min H2、10sccm-
20sccm SiH4, grow SiyGa(1-y)N superlattice layers, Si doping concentrations 1E18atoms/cm3-5E18atoms/cm3；
Cyclical growth SixAl(1-x)N and SiyGa(1-y)N superlattice layers, growth cycle 10-20, grow SixAl(1-x)N
And SiyGa(1-y)The order of N superlattice layers is replaceable.
Above-mentioned alternating growth doping In InxGa(1-x)N/GaN luminescent layers are further：Keep reaction cavity pressure
700 DEG C -750 DEG C of 300mbar-400mbar, temperature, it is passed through the NH that flow is 50000sccm-70000sccm3、20sccm-
40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min N2, growth doping In 2.5nm-
3.5nm InxGa(1-x)N layers, x=0.20-0.25, emission wavelength 450nm-455nm；Then temperature is raised to 750 DEG C -850
DEG C, reaction cavity pressure 300mbar-400mbar is kept, is passed through the NH that flow is 50000sccm-70000sccm3、20sccm-
100sccm TMGa, 100L/min-130L/min N2, grow 8nm-15nm GaN layer；Repeat InxGa(1-x)N growth,
Then GaN growth, alternating growth In are repeatedxGa(1-x)N/GaN luminescent layers, controlling cycle number are 7-15.
Above-mentioned growing P-type AlGaN layer is further：Holding reaction cavity pressure 200mbar-400mbar, 900 DEG C of temperature-
950 DEG C, it is passed through the NH that flow is 50000sccm-70000sccm3, 30sccm-60sccm TMGa, 100L/min-130L/
Min H2, 100sccm-130sccm TMAl, 1000sccm-1300sccm Cp2Mg, continued propagation 50nm-100nm p-type
AlGaN layer, Al doping concentrations 1E20atoms/cm3-3E20atoms/cm3, Mg doping concentrations 1E19atoms/cm3-
1E20atoms/cm3。
The p-type GaN layer that Mg is mixed in above-mentioned growth is further：Keep reaction cavity pressure 400mbar-900mbar, temperature 950
DEG C -1000 DEG C, it is passed through the NH that flow is 50000sccm-70000sccm3, 20sccm-100sccm TMGa, 100L/min-
130L/min H2, 1000sccm-3000sccm Cp2Mg, continued propagation 50nm-100nm the p-type GaN layer for mixing Mg, Mg mix
Miscellaneous concentration 1E19atoms/cm3-1E20atoms/cm3。
Above-mentioned cooling down is further：650 DEG C -680 DEG C are cooled to, is incubated 20min-30min, is then switched off heating system
Unite, close and give gas system, furnace cooling.
The present invention uses new material SixAl(1-x)N/SiyGa(1-y)N superlattice layers, the high energy band by the use of A1N are used as gesture
It is of heap of stone, stop that electronics is too fast by N Es-region propagations to luminescent layer, the more crowded electronics of longitudinal propagation runs into the stop of A1N energy bands, suitably
Horizontal proliferation come；Si simultaneouslyxAl(1-x)N/SiyGa(1-y)N superlattice layers form the two-dimensional electron gas of high concentration, Two-dimensional electron
The lateral transfer rate of gas is very high, accelerates the extending transversely of electronics, macroscopically electric current passes through SixAl(1-x)N/SiyGa(1-y)N is super brilliant
Effectively spread during compartment, what is improved therewith is that the distribution of luminescent layer electric current becomes uniform, new material with causing
LED luminous intensities improve, and various aspects of performance can get a promotion.
Comparative example 1
The growing method for traditional LED epitaxial layers that comparative example 1 provides is (epitaxial layer structure is referring to Fig. 2)：
1st, in 1000 DEG C -1100 DEG C of H2Under atmosphere, 100L/min-130L/min H is passed through2, keep reaction cavity pressure
100mbar-300mbar, processing Sapphire Substrate 8min-10min.
2nd, it is cooled at 500-600 DEG C, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is
10000sccm-20000sccm NH3, 50sccm-100sccm TMGa, 100L/min-130L/min H2, sapphire serve as a contrast
Growth thickness is 20nm-40nm low temperature buffer layer GaN on bottom.Temperature is raised to 1000 DEG C -1100 DEG C, keeps reaction cavity pressure
300mbar-600mbar, it is passed through the NH that flow is 30000sccm-40000sccm3, 100L/min-130L/min H2, keep
Temperature stabilization continues 300s-500s, and low temperature buffer layer GaN is corroded into irregular island.
3rd, 1000 DEG C -1200 DEG C are increased the temperature to, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is
30000sccm-40000sccm NH3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, continued propagation 2
μm -4 μm of the GaN layer that undopes.
4th, reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
400sccm TMGa, 100L/min-130L/min H2, 20sccm-50sccm SiH4, 3 μm of -4 μm of doping Si of continued propagation
N-type GaN, Si doping concentration 5E18atoms/cm3-1E19atoms/cm3(1E19 represents 10 19 powers, that is, 1019,
5E18 represents 5 × 1018, following presentation mode is by that analogy).
5th, reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
400sccm TMGa, 100L/min-130L/min H2, 2sccm-10sccm SiH4, continued propagation 200nm-400nm doping
Si N-type GaN, Si doping concentration 5E17atoms/cm3-1E18atoms/cm3。
6th, reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature are kept, it is 50000sccm- to be passed through flow
70000sccm NH3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min
N2, growth doping In 2.5nm-3.5nm InxGa(1-x)N layers, x=0.20-0.25, emission wavelength 450nm-455nm；Connect
Rise temperature to 750 DEG C -850 DEG C, keeps reaction cavity pressure 300mbar-400mbar, it is 50000sccm- to be passed through flow
70000sccm NH3, 20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-15nm GaN layer；
Repeat InxGa(1-x)N growth, then repeatedly GaN growth, alternating growth InxGa(1-x)N/GaN luminescent layers, controlling cycle number
For 7-15.
7th, reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature are kept, it is 50000sccm- to be passed through flow
70000sccm NH3, 30sccm-60sccm TMGa, 100L/min-130L/min H2, 100sccm-130sccm
TMAl, 1000sccm-1800sccm Cp2Mg, continued propagation 50nm-100nm p-type AlGaN layer, Al doping concentrations
1E20atoms/cm3-3E20atoms/cm3, Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3。
8th, reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature are kept, it is 50000sccm- to be passed through flow
70000sccm NH3, 20sccm-100sccm TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm
Cp2Mg, continued propagation 50nm-200nm the p-type GaN layer for mixing Mg, Mg doping concentrations 1E19atoms/cm3-1E20atoms/
cm3。
9th, 650 DEG C -680 DEG C are finally cooled to, 20min-30min is incubated, is then switched off heating system, closes and give gas system
System, furnace cooling.
Sample 1 is prepared according to traditional LED growing method (method of comparative example 1), described according to this patent
Method prepares sample 2；Sample 1 and the epitaxial growth method parameter difference of sample 2 are N-type of the present invention in growth doping Si
Also include growth Si after GaN layerxAl(1-x)N/SiyGa(1-y)N superlattice layers, it is just the same to grow other outer layer growth conditions；
Sample 1 and sample 2 plate ITO layer about 150nm before identical under process conditions, plate Cr/Pt/Au electrodes about under the same conditions
1500nm, under the same conditions plating SiO2About 100nm, then under the same conditions by sample grinding and cutting into 635 μ
The chip particle of m*635 μm (25mil*25mil), then sample 1 and sample 2 each select 100 crystal grain in same position,
Under identical packaging technology, white light LEDs are packaged into.Then integrating sphere He of test sample 1 under the conditions of driving current 350mA is used
The photoelectric properties of sample 2.Table 1 below is the contrast table of light emitting layer grown parameter, and table 2 is the comparison sheet of product unit for electrical property parameters
Lattice.
The contrast of the light emitting layer grown parameter of table 1
The comparison of table 2 sample 1,2 product electrical parameters
The data that integrating sphere obtains are analysed and compared, referring to table 2, it is seen then that growing method LED light provided by the invention
Effect improves, and all other LED electrical parameters also improve.Experimental data, which demonstrates scheme provided by the invention, can lift LED productions
The feasibility of product light efficiency performance.
Compared with prior art, method described herein, following effect has been reached：
In LED current extension layer epitaxial growth method of the present invention, using new material SixAl(1-x)N/SiyGa(1-y)N is super brilliant
Compartment, the high energy band by the use of A1N are built as gesture, stop that electronics is too fast more crowded by N Es-region propagations to luminescent layer, longitudinal propagation
Electronics runs into the stop of A1N energy bands, and appropriate horizontal proliferation is come；Si simultaneouslyxAl(1-x)N/SiyGa(1-y)N superlattice layers are formed
The two-dimensional electron gas of high concentration, the lateral transfer rate of two-dimensional electron gas is very high, accelerates the extending transversely of electronics, macroscopically electric current
Pass through SixAl(1-x)N/SiyGa(1-y)Effectively spread during N superlattice layers, what is therewith improved is point of luminescent layer electric current
Cloth becomes uniform, new material with causing LED luminous intensities to improve, various aspects of performance can get a promotion.
It should be understood by those skilled in the art that, embodiments herein can be provided as method, apparatus or computer program
Product.Therefore, the application can use the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Apply the form of example.Moreover, the application can use the computer for wherein including computer usable program code in one or more
The computer program production that usable storage medium is implemented on (including but is not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
Some preferred embodiments of the application have shown and described in described above, but as previously described, it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and above-mentioned teaching or the technology or knowledge of association area can be passed through in the scope of the invention is set forth herein
It is modified., then all should be in this Shen and the change and change that those skilled in the art are carried out do not depart from spirit and scope
Please be in the protection domain of appended claims.
Claims (8)
1. a kind of LED current extension layer epitaxial growth method, includes successively：Handle substrate, low temperature growth buffer layer GaN, growth
Undope GaN layer, growth doping Si N-type GaN layer, alternating growth doping In InxGa(1-x)N/GaN luminescent layers, growing P-type
The p-type GaN layer of AlGaN layer, growth doping Mg, cooling down, it is characterised in that
Also include growth Si after the N-type GaN layer of the growth doping SixAl(1-x)N/SiyGa(1-y)N superlattice layers,
The growth SixAl(1-x)N/SiyGa(1-y)N superlattice layers are further：
Reaction cavity pressure 150mbar-300mbar is kept, 1000 DEG C -1100 DEG C of keeping temperature, it is 30000sccm- to be passed through flow
60000sccm NH3, 100L/min-130L/min H2, 100sccm-200sccm TMAl, 10sccm-20sccm
SiH4, grow SixAl(1-x)N, Si doping concentration 1E18atoms/cm3-5E18atoms/cm3；
Reaction cavity pressure 150mbar-300mbar is kept, 1000 DEG C -1100 DEG C of keeping temperature, it is 30000sccm- to be passed through flow
60000sccm NH3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, 10sccm-20sccm
SiH4, grow SiyGa(1-y)N superlattice layers, Si doping concentrations 1E18atoms/cm3-5E18atoms/cm3；
Cyclical growth SixAl(1-x)N and SiyGa(1-y)N superlattice layers, growth cycle 10-20, grow SixAl(1-x)N and
SiyGa(1-y)The order of N superlattice layers is replaceable；
The low temperature growth buffer layer GaN be further：
500 DEG C -600 DEG C are cooled to, keeps reaction cavity pressure 300mbar-600mbar, it is 10000sccm- to be passed through flow
20000sccm NH3, 50sccm-100sccm TMGa, 100L/min-130L/min H2, on a sapphire substrate growth it is thick
Spend the low temperature buffer layer GaN for 20nm-40nm；
Temperature is raised to 1000 DEG C -1100 DEG C, keeps reaction cavity pressure 300mbar-600mbar, being passed through flow is
30000sccm-40000sccm NH3, 100L/min-130L/min H2, keeping temperature stably continue 300s-500s, will be low
Warm cushion GaN corrodes into irregular island.
2. LED current extension layer epitaxial growth method according to claim 1, it is characterised in that
It is described processing substrate be further：In 1000 DEG C -1100 DEG C of H2Under atmosphere, 100L/min-130L/min H is passed through2,
Keep reaction cavity pressure 100mbar-300mbar, processing Sapphire Substrate 8min-10min.
3. LED current extension layer epitaxial growth method according to claim 1, it is characterised in that
The growth GaN layer that undopes is further：1000 DEG C -1200 DEG C are increased the temperature to, keeps reaction cavity pressure
300mbar-600mbar, it is passed through the NH that flow is 30000sccm-40000sccm3, 200sccm-400sccm TMGa,
100L/min-130L/min H2, 2 μm -4 μm of continued propagation the GaN layer that undopes.
4. LED current extension layer epitaxial growth method according to claim 3, it is characterised in that
It is described growth doping Si N-type GaN layer be further：
Reaction cavity pressure, temperature-resistant is kept, is passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
TMGa, 100L/min-130L/min H2, 20sccm-50sccm SiH4, 3 μm of -4 μm of doping Si of continued propagation N-type
GaN, Si doping concentration 5E18atoms/cm3-1E19atoms/cm3；Reaction cavity pressure, temperature-resistant is kept, being passed through flow is
30000sccm-60000sccm NH3, 200sccm-400sccm TMGa, 100L/min-130L/min H2、2sccm-
10sccm SiH4, 200 μm of -400 μm of doping Si of continued propagation N-type GaN, Si doping concentration 5E17atoms/cm3-
1E18atoms/cm3。
5. LED current extension layer epitaxial growth method according to claim 1, it is characterised in that
The In of the alternating growth doping InxGa(1-x)N/GaN luminescent layers are further：
Reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature are kept, it is 50000sccm- to be passed through flow
70000sccm NH3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min
N2, growth doping In 2.5nm-3.5nm InxGa(1-x)N layers, x=0.20-0.25, emission wavelength 450nm-455nm；
Then temperature is raised to 750 DEG C -850 DEG C, keeps reaction cavity pressure 300mbar-400mbar, being passed through flow is
50000sccm-70000sccm NH3, 20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-
15nm GaN layer；
Repeat InxGa(1-x)N growth, then repeatedly GaN growth, alternating growth InxGa(1-x)N/GaN luminescent layers, control week
Issue is 7-15.
6. LED current extension layer epitaxial growth method according to claim 1, it is characterised in that
The growing P-type AlGaN layer is further：
Reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature are kept, it is 50000sccm- to be passed through flow
70000sccm NH3, 30sccm-60sccm TMGa, 100L/min-130L/min H2, 100sccm-130sccm
TMAl, 1000sccm-1300sccm Cp2Mg, continued propagation 50nm-100nm p-type AlGaN layer, Al doping concentrations
1E20atoms/cm3-3E20atoms/cm3, Mg doping concentrations 1E19atoms/cm3-1E20atoms/cm3。
7. LED current extension layer epitaxial growth method according to claim 1, it is characterised in that
Described grow mixes Mg p-type GaN layer and is further：
Reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature are kept, it is 50000sccm- to be passed through flow
70000sccm NH3, 20sccm-100sccm TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm
Cp2Mg, continued propagation 50nm-100nm the p-type GaN layer for mixing Mg, Mg doping concentrations 1E19atoms/cm3-1E20atoms/
cm3。
8. according to any LED current extension layer epitaxial growth method of claim 1~7, it is characterised in that
The cooling down is further：Be cooled to 650 DEG C -680 DEG C, be incubated 20min-30min, be then switched off heating system,
Close and give gas system, furnace cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610216722.XA CN105845788B (en) | 2016-04-08 | 2016-04-08 | A kind of LED current extension layer epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610216722.XA CN105845788B (en) | 2016-04-08 | 2016-04-08 | A kind of LED current extension layer epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105845788A CN105845788A (en) | 2016-08-10 |
| CN105845788B true CN105845788B (en) | 2018-02-09 |
Family
ID=56597057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610216722.XA Active CN105845788B (en) | 2016-04-08 | 2016-04-08 | A kind of LED current extension layer epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105845788B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299062B (en) * | 2016-09-20 | 2019-02-19 | 湘能华磊光电股份有限公司 | The epitaxial growth method of current extending |
| CN106876538B (en) * | 2017-02-16 | 2019-01-25 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growing method and light emitting diode |
| CN111628056B (en) * | 2020-06-05 | 2023-03-21 | 湘能华磊光电股份有限公司 | LED multi-quantum well layer growth method for improving crystal quality |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751406A (en) * | 2011-04-20 | 2012-10-24 | 亚威朗集团有限公司 | Light-emitting device with low forward voltage and method for fabricating the same |
| CN104779331A (en) * | 2015-03-12 | 2015-07-15 | 聚灿光电科技股份有限公司 | GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070062686A (en) * | 2005-12-13 | 2007-06-18 | 엘지이노텍 주식회사 | Nitride semiconductor light emitting diode and fabrication method |
| KR101175183B1 (en) * | 2011-08-08 | 2012-08-17 | 일진머티리얼즈 주식회사 | Nitride based light emitting diode with excellent current spreading effect and manufacturing method thereof |
-
2016
- 2016-04-08 CN CN201610216722.XA patent/CN105845788B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751406A (en) * | 2011-04-20 | 2012-10-24 | 亚威朗集团有限公司 | Light-emitting device with low forward voltage and method for fabricating the same |
| CN104779331A (en) * | 2015-03-12 | 2015-07-15 | 聚灿光电科技股份有限公司 | GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105845788A (en) | 2016-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105869999B (en) | LED epitaxial growth methods | |
| CN105932118B (en) | Improve the LED epitaxial growth methods of hole injection | |
| CN105261678B (en) | A kind of epitaxial growth method for improving LED internal quantum efficiency | |
| CN105870270B (en) | LED extensional superlattice growing methods | |
| CN106409999B (en) | A kind of LED extensional superlattice growing method | |
| CN105355735B (en) | A kind of epitaxial growth method of reduction LED contact resistances | |
| CN108550665A (en) | A kind of LED epitaxial structure growing method | |
| CN106531855A (en) | LED epitaxial structure and growth method therefor | |
| CN106410000B (en) | A kind of LED outer layer growth method | |
| CN105845788B (en) | A kind of LED current extension layer epitaxial growth method | |
| CN106299062B (en) | The epitaxial growth method of current extending | |
| CN107507891B (en) | Improve the LED epitaxial growth method of internal quantum efficiency | |
| CN105895753B (en) | Improve the epitaxial growth method of LED luminous efficiency | |
| CN106129199A (en) | Reduce the LED epitaxial growth method of contact resistance | |
| CN106206884B (en) | P layers of growing method of LED extensions | |
| CN105869994B (en) | A kind of growing method of superlattice layer and the LED epitaxial structure containing this structure | |
| CN107946416A (en) | A kind of LED epitaxial growth methods for improving luminous efficiency | |
| CN105350074A (en) | Epitaxial growth method for improving LED epitaxial crystal quality | |
| CN107359225A (en) | A kind of LED epitaxial growth methods for strengthening luminous radiation efficiency | |
| CN105742419A (en) | Growth method for Novel LED epitaxial P layer | |
| CN107564999B (en) | A kind of LED epitaxial growth method of improving luminous efficiency | |
| CN106848022B (en) | A kind of LED epitaxial structure and its growing method | |
| CN105655455B (en) | A kind of epitaxial growth method for lifting LED light effect | |
| CN106784195B (en) | A kind of epitaxial growth method improving light emitting diode quality | |
| CN105870282B (en) | A kind of growing method of current extending and the LED epitaxial structure containing this structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |