CN104779331A - GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device - Google Patents
GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device Download PDFInfo
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- CN104779331A CN104779331A CN201510109087.0A CN201510109087A CN104779331A CN 104779331 A CN104779331 A CN 104779331A CN 201510109087 A CN201510109087 A CN 201510109087A CN 104779331 A CN104779331 A CN 104779331A
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- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 abstract description 12
- 239000007924 injection Substances 0.000 abstract description 12
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a GaN-based LED (Light-Emitting Diode) device with a two-dimensional electron gas structure, and a preparation method for the GaN-based LED device. The LED device comprises a substrate, a GaN nucleating layer, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, the two-dimensional electron gas structure, a multi-quantum well luminous layer and a P-type GaN layer. According to the LED device, the two-dimensional electron gas structure is an electron emission layer formed by alternately stacking a plurality of pairs of lightly-doped n-GaN layers/AlN layers/heavily-doped n+GaN layers from bottom to top, the overflow of electrons into a non-quantum well area for nonradiative recombination with electron holes under a heavy-current injection condition can be effectively inhibited, and in addition, by two-dimensional electron gas, the transverse spreading efficiency of the electrons can be improved to improve the luminous efficiency of LEDs under the heavy-current injection condition.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly relate to a kind of GaN base LED component with two-dimensional electron gas structure and preparation method thereof.
Background technology
Light-emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.This electronic component occurred as far back as 1962, and can only send the ruddiness of low luminosity in early days, develop other monochromatic versions afterwards, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as indicator light, display panel etc.; Along with the continuous progress of technology, light-emitting diode has been widely used in display, television set daylighting decoration and illumination.
LED is a kind of solid-state semiconductor device electric energy being converted into luminous energy, relative to conventional light source, LED has the advantages that volume is little, long service life, fast response time, luminous efficiency are high, and therefore LED becomes a kind of novel green light source got most of the attention and enters lighting field.Along with LED is in illumination and the raising year by year of backlight market range of application, the application demand of middle high-power component obviously increases, but there is the problem of luminous efficiency decay in LED under Bulk current injection, limit exploitation that is high-power, high-brightness LED to a certain extent, also constrain the development of LED at general illumination field.
Therefore, for above-mentioned technical problem, be necessary to provide a kind of GaN base LED component with two-dimensional electron gas structure and preparation method thereof.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of GaN base LED component with two-dimensional electron gas structure and preparation method thereof.
To achieve these goals, the technical scheme that provides of the embodiment of the present invention is as follows:
Have a GaN base LED component for two-dimensional electron gas structure, described LED component comprises from bottom to top successively:
Substrate;
Be positioned at the GaN nucleating layer on substrate;
Be positioned at the GaN resilient coating on GaN nucleating layer;
Be positioned at the undoped GaN layer on GaN resilient coating;
Be positioned at the N-type GaN layer in undoped GaN layer;
Be positioned at the two-dimensional electron gas structure in N-type GaN layer, described two-dimensional electron gas structure is some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced from bottom to top to stacking composition;
Be positioned at the structural multiple quantum well light emitting layer of two-dimensional electron gas;
Be positioned at the P type GaN layer on multiple quantum well light emitting layer.
As a further improvement on the present invention, described two-dimensional electron gas structure comprises 3 ~ 10 to light dope n-GaN layer/AlN layer/heavy doping n+GaN layer alternately stacking from bottom to top.
As a further improvement on the present invention, in described two-dimensional electron gas structure, the thickness of light dope n-GaN layer is 2 ~ 8 nanometers, and the thickness of heavy doping n+GaN layer is 4 ~ 20 nanometers.
As a further improvement on the present invention, in described two-dimensional electron gas structure, the thickness of AlN layer is 0.6 ~ 2 nanometer.
As a further improvement on the present invention, described light dope n-GaN layer and heavy doping n+GaN layer are Si doping, and the doping content of light dope n-GaN layer is 2E17cm
-3~ 2E18cm
-3, the doping content of heavy doping n+GaN layer is 2E18cm
-3~ 6E18cm
-3.
As a further improvement on the present invention, described P type GaN layer also comprises P type GaN contact layer.
Correspondingly, a kind of preparation method with the GaN base LED component of two-dimensional electron gas structure, described preparation method comprises:
One substrate is provided;
At Grown GaN nucleating layer;
Growing GaN resilient coating on GaN nucleating layer;
GaN resilient coating grows undoped GaN layer;
Undoped GaN layer grows N-type GaN layer;
N-type GaN layer grows two-dimensional electron gas structure, and described two-dimensional electron gas structure is some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced from bottom to top to stacking composition;
Two-dimensional electron gas structure grows multiple quantum well light emitting layer;
Growth P-type GaN layer on multiple quantum well light emitting layer.
As a further improvement on the present invention, described two-dimensional electron gas structure comprises 3 ~ 10 to light dope n-GaN layer/AlN layer/heavy doping n+GaN layer alternately stacking from bottom to top.
The present invention has following beneficial effect:
Some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced to stacking composition in LED component, electronics under Bulk current injection can be effectively suppressed to overflow to non-quantum well region and non-radiative recombination occurs in hole, improve the efficiency extending transversely of electronics by two-dimensional electron gas, to improve the luminous efficiency of LED under Bulk current injection simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of GaN base LED component in prior art;
Fig. 2 is the structural representation of the GaN base LED component in the embodiment of the invention with two-dimensional electron gas structure.
Embodiment
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Ginseng Figure 1 shows that the structural representation of GaN base LED component in prior art, comprises successively from bottom to top: Sapphire Substrate, GaN nucleating layer, GaN resilient coating, undoped GaN layer, N-type GaN layer, multiple quantum well light emitting layer, P type GaN layer and P type GaN contact layer.
In prior art there is the problem of luminous efficiency decay in GaN base LED component LED component under Bulk current injection.
Shown in ginseng Fig. 2, in the embodiment of the invention, GaN base LED component comprises from bottom to top successively:
Substrate 10, in present embodiment, substrate is Sapphire Substrate, can be also other backing materials in other embodiments, as Si, SiC etc.;
Be positioned at the GaN nucleating layer 20 on substrate 10, preferably, GaN nucleating layer is the low temperature GaN nucleating layer grown under cryogenic conditions;
Be positioned at the GaN resilient coating 30 on GaN nucleating layer 20;
Be positioned at the undoped GaN layer 40 on GaN resilient coating 30;
Be positioned at the N-type GaN layer 50 in undoped GaN layer 40;
Be positioned at the two-dimensional electron gas structure 60 in N-type GaN layer 50;
Be positioned at the multiple quantum well light emitting layer 70 in two-dimensional electron gas structure 60;
Be positioned at the P type GaN layer 80 on multiple quantum well light emitting layer 70;
Be positioned at the P type GaN contact layer 90 in P type GaN layer 80.
Wherein, two-dimensional electron gas structure 60 is some electron emission layers light dope n-GaN layer 61/AlN layer 62/ heavy doping n+GaN layer 63 being replaced to stacking composition.Two-dimensional electron gas structure can effectively suppress electronics under Bulk current injection to overflow to non-quantum well region and non-radiative recombination occurs in hole, improve the efficiency extending transversely of electronics by two-dimensional electron gas, to improve the luminous efficiency of LED component under Bulk current injection simultaneously.
In the present invention, two-dimensional electron gas structure comprises 3 ~ 10 to light dope n-GaN layer/AlN layer/heavy doping n+GaN layer alternately stacking from bottom to top.
In present embodiment, light dope n-GaN layer and heavy doping n+GaN layer are Si doping, and the doping content of light dope n-GaN layer is 2E17cm
-3~ 2E18cm
-3, the doping content of heavy doping n+GaN layer is 2E18cm
-3~ 6E18cm
-3.
Further, in present embodiment, the thickness of light dope n-GaN layer is 2 ~ 8 nanometers, and the thickness of heavy doping n+GaN layer is 4 ~ 20 nanometers; The thickness of AlN layer is 0.6 ~ 2 nanometer.
In the electron emission layer of light dope n-GaN layer in the present invention/AlN layer/heavy doping n+GaN layer alternating stacked configuration composition, the doping content of Si, light, highly doped n-GaN layer thickness and AlN layer thickness all can regulate in optimum organization.AlN has stronger polarity effect than the AlGaN material of low aluminium component, the AlN layer (barrier layer) of less thickness can AlN/GaN interface induced go out the two-dimensional electron gas of higher concentration.By regulating optimum organization, the nGaN of AlN and the high-concentration and low-concentration two-dimensional electron gas structure that forms optimum forms, suppression electronics under Bulk current injection overflows to non-quantum well region and non-radiative recombination occurs in hole, improve the efficiency extending transversely of electronics, thus improve the luminous efficiency of LED under Bulk current injection.
Preferably, light dope n-GaN layer/AlN layer/heavy doping n+GaN layer two-dimensional electron gas structure electrical emission layer is 3-10 couple, during this structure logarithm <3 couple, under big current, the confinement effect of multiple quantum trap to electronics can weaken, during logarithm >10 couple, due to the lattice mismatch that GaN and AlN is larger, can crystal mass be caused to decline, these 2 declines that all can cause LED photovoltaic performance.
In present embodiment, substrate selects Sapphire Substrate, and epitaxial loayer selects GaN epitaxial layer, and in other embodiments, substrate can be also Si substrate, SiC substrate etc., and epitaxial loayer also can be GaAs, InP, InGaAsP etc.
Correspondingly, the invention also discloses a kind of preparation method with the GaN base LED component of two-dimensional electron gas structure, comprising:
One substrate is provided;
At Grown GaN nucleating layer;
Growing GaN resilient coating on GaN nucleating layer;
GaN resilient coating grows undoped GaN layer;
Undoped GaN layer grows N-type GaN layer;
N-type GaN layer grows two-dimensional electron gas structure, and described two-dimensional electron gas structure is some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced from bottom to top to stacking composition;
Two-dimensional electron gas structure grows multiple quantum well light emitting layer;
Growth P-type GaN layer on multiple quantum well light emitting layer;
Growth P-type GaN contact layer in P type GaN layer.
Preferably, two-dimensional electron gas structure comprises 3 ~ 10 to light dope n-GaN layer/AlN layer/heavy doping n+GaN layer alternately stacking from bottom to top.
Further, GaN resilient coating is low temperature GaN buffer, and its growth temperature is 530 DEG C to 550 DEG C.
In sum, compared with prior art, the present invention has following beneficial effect:
Some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced to stacking composition in LED component, electronics under Bulk current injection can be effectively suppressed to overflow to non-quantum well region and non-radiative recombination occurs in hole, improve the efficiency extending transversely of electronics by two-dimensional electron gas, to improve the luminous efficiency of LED under Bulk current injection simultaneously.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (8)
1. have a GaN base LED component for two-dimensional electron gas structure, it is characterized in that, described LED component comprises from bottom to top successively:
Substrate;
Be positioned at the GaN nucleating layer on substrate;
Be positioned at the GaN resilient coating on GaN nucleating layer;
Be positioned at the undoped GaN layer on GaN resilient coating;
Be positioned at the N-type GaN layer in undoped GaN layer;
Be positioned at the two-dimensional electron gas structure in N-type GaN layer, described two-dimensional electron gas structure is some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced from bottom to top to stacking composition;
Be positioned at the structural multiple quantum well light emitting layer of two-dimensional electron gas;
Be positioned at the P type GaN layer on multiple quantum well light emitting layer.
2. GaN base LED component according to claim 1, is characterized in that, described two-dimensional electron gas structure comprises 3 ~ 10 to light dope n-GaN layer/AlN layer/heavy doping n+GaN layer alternately stacking from bottom to top.
3. GaN base LED component according to claim 1, is characterized in that, in described two-dimensional electron gas structure, the thickness of light dope n-GaN layer is 2 ~ 8 nanometers, and the thickness of heavy doping n+GaN layer is 4 ~ 20 nanometers.
4. GaN base LED component according to claim 1, is characterized in that, in described two-dimensional electron gas structure, the thickness of AlN layer is 0.6 ~ 2 nanometer.
5. GaN base LED component according to claim 1, is characterized in that, described light dope n-GaN layer and heavy doping n+GaN layer are Si doping, and the doping content of light dope n-GaN layer is 2E17cm
-3~ 2E18cm
-3, the doping content of heavy doping n+GaN layer is 2E18cm
-3~ 6E18cm
-3.
6. GaN base LED component according to claim 1, is characterized in that, described P type GaN layer also comprises P type GaN contact layer.
7. have a preparation method for the GaN base LED component of two-dimensional electron gas structure as claimed in claim 1, it is characterized in that, described preparation method comprises:
One substrate is provided;
At Grown GaN nucleating layer;
Growing GaN resilient coating on GaN nucleating layer;
GaN resilient coating grows undoped GaN layer;
Undoped GaN layer grows N-type GaN layer;
N-type GaN layer grows two-dimensional electron gas structure, and described two-dimensional electron gas structure is some electron emission layers light dope n-GaN layer/AlN layer/heavy doping n+GaN layer being replaced from bottom to top to stacking composition;
Two-dimensional electron gas structure grows multiple quantum well light emitting layer;
Growth P-type GaN layer on multiple quantum well light emitting layer.
8. preparation method according to claim 7, is characterized in that, described two-dimensional electron gas structure comprises 3 ~ 10 to light dope n-GaN layer/AlN layer/heavy doping n+GaN layer alternately stacking from bottom to top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510109087.0A CN104779331A (en) | 2015-03-12 | 2015-03-12 | GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510109087.0A CN104779331A (en) | 2015-03-12 | 2015-03-12 | GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device |
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| CN104779331A true CN104779331A (en) | 2015-07-15 |
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| CN201510109087.0A Pending CN104779331A (en) | 2015-03-12 | 2015-03-12 | GaN-based LED (Light-Emitting Diode) device with two-dimensional electron gas structure, and preparation method for GaN-based LED device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845788A (en) * | 2016-04-08 | 2016-08-10 | 湘能华磊光电股份有限公司 | LED current extension layer epitaxial growth method |
| CN105869994A (en) * | 2016-04-14 | 2016-08-17 | 湘能华磊光电股份有限公司 | Growth method for superlattice layer and LED epitaxial structure comprising superlattice layer |
| CN105870282A (en) * | 2016-04-14 | 2016-08-17 | 湘能华磊光电股份有限公司 | Growth method for current expansion layer and LED epitaxial structure comprising current expansion layer |
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| CN1316782A (en) * | 2000-04-05 | 2001-10-10 | 中国科学院半导体研究所 | Nitride semiconductor device |
| CN101075653A (en) * | 2006-09-05 | 2007-11-21 | 武汉迪源光电科技有限公司 | Process for producing quasi-vertical hybrid N-type GaN LED reversed chip with high-doping performance |
| US20140014966A1 (en) * | 2012-07-13 | 2014-01-16 | Raytheon Company | Gallium nitride devices having low ohmic contact resistance |
| CN203850327U (en) * | 2014-04-22 | 2014-09-24 | 同辉电子科技股份有限公司 | GaN based LED epitaxial wafer with two-dimensional electron gas structure electron emission layer |
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2015
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Patent Citations (4)
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| CN1316782A (en) * | 2000-04-05 | 2001-10-10 | 中国科学院半导体研究所 | Nitride semiconductor device |
| CN101075653A (en) * | 2006-09-05 | 2007-11-21 | 武汉迪源光电科技有限公司 | Process for producing quasi-vertical hybrid N-type GaN LED reversed chip with high-doping performance |
| US20140014966A1 (en) * | 2012-07-13 | 2014-01-16 | Raytheon Company | Gallium nitride devices having low ohmic contact resistance |
| CN203850327U (en) * | 2014-04-22 | 2014-09-24 | 同辉电子科技股份有限公司 | GaN based LED epitaxial wafer with two-dimensional electron gas structure electron emission layer |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845788A (en) * | 2016-04-08 | 2016-08-10 | 湘能华磊光电股份有限公司 | LED current extension layer epitaxial growth method |
| CN105845788B (en) * | 2016-04-08 | 2018-02-09 | 湘能华磊光电股份有限公司 | A kind of LED current extension layer epitaxial growth method |
| CN105869994A (en) * | 2016-04-14 | 2016-08-17 | 湘能华磊光电股份有限公司 | Growth method for superlattice layer and LED epitaxial structure comprising superlattice layer |
| CN105870282A (en) * | 2016-04-14 | 2016-08-17 | 湘能华磊光电股份有限公司 | Growth method for current expansion layer and LED epitaxial structure comprising current expansion layer |
| CN105870282B (en) * | 2016-04-14 | 2018-02-16 | 湘能华磊光电股份有限公司 | A kind of growing method of current extending and the LED epitaxial structure containing this structure |
| CN105869994B (en) * | 2016-04-14 | 2018-04-06 | 湘能华磊光电股份有限公司 | A kind of growing method of superlattice layer and the LED epitaxial structure containing this structure |
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Application publication date: 20150715 |