CN111326622A - Light-emitting diode based on hole adjusting layer - Google Patents

Light-emitting diode based on hole adjusting layer Download PDF

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Publication number
CN111326622A
CN111326622A CN201811525624.XA CN201811525624A CN111326622A CN 111326622 A CN111326622 A CN 111326622A CN 201811525624 A CN201811525624 A CN 201811525624A CN 111326622 A CN111326622 A CN 111326622A
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China
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layer
light
gallium nitride
type
type semiconductor
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CN201811525624.XA
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Inventor
李建华
李全杰
刘向英
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Priority to CN201811525624.XA priority Critical patent/CN111326622A/en
Publication of CN111326622A publication Critical patent/CN111326622A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Abstract

The invention relates to a light-emitting diode based on a hole adjusting layer, which comprises a substrate layer; the buffer layer is positioned on the substrate layer; the low-temperature gallium nitride layer is positioned on the buffer layer; the unintentional doped gallium nitride layer is positioned on the low-temperature gallium nitride layer; a superlattice layer on the unintentionally doped gallium nitride layer; an N-type semiconductor layer on the superlattice layer; the N-type doping layer is positioned on the N-type semiconductor layer; the quantum well light-emitting layer is positioned on the N-type doped layer; the electron barrier layer is positioned on the quantum well light-emitting layer; the hole adjusting layer comprises a first undoped layer, a second undoped layer and a P-type doped layer which are sequentially stacked on the electron blocking layer; and the P-type semiconductor layer is positioned on the hole adjusting layer. The light emitting diode can improve the light emitting quality of the light emitting diode. And the hole concentration of the hole transferred to the quantum well light-emitting layer can be improved, so that the light-emitting efficiency of the light-emitting diode is improved.

Description

Light-emitting diode based on hole adjusting layer
Technical Field
The invention relates to the technical field of light-emitting elements, in particular to a light-emitting diode based on a hole adjusting layer.
Background
As a new product with great influence in the emerging industry of information photoelectronics, an LED (Light Emitting Diode) has the characteristics of small volume, long service life, rich and colorful colors, low energy consumption and the like, and is widely applied to the fields of illumination, display screens, signal lamps, backlight sources, toys and the like.
At present, the light emitting diode generally comprises a substrate layer, a buffer layer, an N-type semiconductor layer, a multi-quantum well light emitting layer and a P-type semiconductor layer. Wherein the N-type semiconductor layer is used for providing electrons; the P-type semiconductor layer is used for providing holes, and when current flows, electrons provided by the N-type semiconductor layer and the holes provided by the P-type semiconductor layer enter the multi-quantum well light-emitting layer to be recombined and emit light.
However, the current light emitting diode has the problems of more defects and the like, and the light emitting quality needs to be further improved so as not to influence the light emitting diode to enter a high-end application market; since the mobility of electrons is much higher than that of holes, the concentration of electrons in the multiple quantum well light-emitting layer is much higher than that of holes, thereby affecting the light-emitting efficiency of the light-emitting diode.
Disclosure of Invention
Therefore, in order to solve the technical defects and shortcomings of the prior art, the invention provides a light emitting diode based on a hole adjustment layer.
Specifically, an embodiment of the present invention provides a light emitting diode based on a hole adjustment layer, including:
a substrate layer;
a buffer layer on the substrate layer;
the low-temperature gallium nitride layer is positioned on the buffer layer;
an unintentionally doped gallium nitride layer on the low temperature gallium nitride layer;
a superlattice layer on the unintentionally doped gallium nitride layer;
an N-type semiconductor layer on the superlattice layer;
the N-type doping layer is positioned on the N-type semiconductor layer;
the quantum well light-emitting layer is positioned on the N-type doped layer;
the electron blocking layer is positioned on the quantum well light-emitting layer;
the hole adjusting layer is positioned on the electron blocking layer and comprises a first undoped layer, a second undoped layer and a P-type doped layer which are sequentially stacked on the electron blocking layer;
and the P-type semiconductor layer is positioned on the hole adjusting layer.
In one embodiment of the invention, the low temperature gallium nitride layer has a thickness of 20-60 nm.
In one embodiment of the invention, the thickness of the unintentionally doped gallium nitride layer is 50-100 nm.
In one embodiment of the present invention, the superlattice layer is an aluminum gallium nitride superlattice layer.
In one embodiment of the invention, the superlattice layer has a thickness of 50-100 nm.
In one embodiment of the present invention, the N-type semiconductor layer is an AlGaN layer.
In one embodiment of the present invention, the first undoped layer is an undoped GaN layer.
In one embodiment of the present invention, the second undoped layer is an undoped AlGaN layer.
In one embodiment of the invention, the P-type doped layer is a P-type InGaP layer.
In one embodiment of the present invention, the doping element of the P-type doping layer is Mg, and the doping concentration of the P-type doping layer is 1019-3×1019cm-3。
The embodiment of the invention has the following advantages:
the light-emitting diode is provided with the low-temperature gallium nitride layer, the unintended doped gallium nitride layer, the gallium nitride superlattice layer and the superlattice insertion layer, so that the light-emitting quality of the light-emitting diode is improved. And the hole adjusting layer is arranged, so that the hole concentration of the holes transferred to the quantum well light-emitting layer can be improved, and the light-emitting efficiency of the light-emitting diode can be improved.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a light emitting diode based on a hole adjustment layer according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a light emitting diode based on a hole adjustment layer according to an embodiment of the present invention. An embodiment of the present invention provides a light emitting diode based on a hole adjusting layer, the light emitting diode comprising:
a substrate layer 11;
specifically, the material of the substrate layer 11 may be sapphire, silicon carbide, zinc oxide, gallium nitride, aluminum nitride, or other material suitable for crystal epitaxial growth.
A buffer layer 12 on the substrate layer 11;
further, the material of the buffer layer 12 is GaN.
According to the embodiment of the invention, the buffer layer 12 is grown on the substrate layer, so that defects entering the N-type semiconductor layer, the quantum well light-emitting layer and the P-type semiconductor layer can be reduced, and the light-emitting quality of the light-emitting diode is improved.
A low-temperature gallium nitride layer 13 on the buffer layer 12;
further, the thickness of the low-temperature gallium nitride layer 13 is 20-60 nm.
According to the embodiment of the invention, the low-temperature gallium nitride layer 13 is added, so that the dislocation density in the N-type semiconductor layer 17 and the quantum well light-emitting layer 19 is effectively reduced, the flatness is improved, and the light-emitting quality of the light-emitting diode is improved.
An unintentionally doped gallium nitride layer 14 on the low temperature gallium nitride layer 13;
further, the thickness of the unintentionally doped gallium nitride layer 14 is 50-100 nm.
A superlattice layer 15 on the unintentionally doped gallium nitride layer 14;
further, the superlattice layer 15 is an aluminum gallium nitride superlattice layer.
Further, the thickness of the superlattice layer 15 is 50-100 nm.
In the embodiment of the invention, by adding the unintentionally doped gallium nitride layer 14 and the superlattice layer 15, the stress brought to the light-emitting diode due to lattice mismatch can be adjusted, and the dislocation density in the N-type semiconductor layer 16 and the quantum well light-emitting layer 18 can be reduced, so that the light-emitting quality of the light-emitting diode is improved.
An N-type semiconductor layer 16 on the superlattice layer 15;
further, the N-type semiconductor layer 16 is an N-type AlGaN layer, the doping element of the N-type semiconductor layer 16 is Si, and the doping concentration of the N-type semiconductor layer 16 may be 1017-1019cm-3。
Further, the N-type semiconductor layer 16 has a mesa, and the first electrode 24 is formed on the mesa of the N-type semiconductor layer 16.
An N-type doped layer 17 located on the N-type semiconductor layer 16;
further, the N-type doped layer 17 is an N-GaN layer, and the doping element of the N-type doped layer 17 is Si;
further, the doping concentration of the N-type doping layer 17 is lower than that of the N-type semiconductor layer 16, and the doping concentration of the N-type doping layer 17 is 1/6-1/4 of that of the N-type semiconductor layer 16;
by growing the N-type doping layer 17 on the N-type semiconductor layer 16, and the doping concentration of the N-type doping layer 17 is lower than that of the N-type semiconductor layer 16, the voltage of the LED device can be effectively reduced, the antistatic property of the LED device is improved, and the luminous efficiency of the LED device is improved.
Preferably, the thickness of the N-type doped layer 17 is 200-400 nm.
A quantum well light-emitting layer 18 located on the N-type doped layer 17;
further, the quantum well light-emitting layer 18 is an indium-doped gallium nitride layer;
an electron blocking layer 19 on the quantum well light emitting layer 18;
further, the material of the electron blocking layer 19 is AlxInyGa1-x-yN, wherein, 0<x≤0.4，0<y≤0.2。
Further, the thickness of the electron blocking layer 19 is 100-200 nm.
In the embodiment of the invention, the electron barrier layer 19 is arranged between the P-type doped layer 20 and the quantum well light-emitting layer 18, and the material of the electron barrier layer 19 is Alx1InyGa1-x1-yN, since the barrier of aluminum is high, the electron blocking layer 19 can effectively prevent electrons generated by the N-type semiconductor layer 16 from entering the P-type semiconductor layer 21, thereby preventing non-radiative recombination between electrons and holes in the P-type semiconductor layer 21, preventing the reduction of hole concentration due to electron transition, and improving the light emitting efficiency of the light emitting diode.
The hole adjusting layer 20 is positioned on the electron blocking layer 19, and the hole adjusting layer 20 comprises a first undoped layer 201, a second undoped layer 202 and a P-type doped layer 203 which are sequentially stacked on the electron blocking layer 19;
further, the first undoped layer 201 is an undoped GaN layer.
Further, the thickness of the first undoped layer 201 is 20 to 40 nm.
Further, the second undoped layer 202 is an undoped AlGaN layer.
Further, the thickness of the second undoped layer 202 is 50-70 nm.
Further, the P-type doped layer 203 is a P-type InGaP layer.
Further, the doping element of P-type doped layer 203 is Mg, and the doping concentration of P-type doped layer 203 is 1019-3×1019cm-3。
Further, the thickness of the P-type doped layer 203 is 60-100 nm.
In the embodiment of the invention, the hole adjusting layer 20 is arranged between the electron blocking layer 19 and the P-type semiconductor layer 21, wherein the hole adjusting layer 20 comprises the first undoped layer 201 and the second undoped layer 202, the first undoped layer 201 is an undoped GaN layer, and the second undoped layer 202 is an undoped AlGaN layer, so that two-dimensional electron gas is generated when the first undoped layer 201 and the second undoped layer 202 are formed, the capability of injecting the P-type semiconductor layer 21 into the quantum well light-emitting layer 18 is improved, the probability of radiation recombination light emission of holes and electrons with the electrons in the quantum well light-emitting layer 18 is improved, and the light-emitting efficiency of the light-emitting diode is improved; and the P-type doping layer 203 is a P-type InGaP layer, so that the P-type doping layer 203 is In an In-rich environment during the process of forming the P-type doping layer 203, the activation energy of Mg In the auxiliary P-type doping layer 203 can be reduced, the radiation recombination efficiency of holes and electrons In the quantum well light-emitting layer 18 is further improved, and the light-emitting efficiency of the light-emitting diode is improved.
And a P-type semiconductor layer 21 on the hole adjusting layer 20.
Further, the P-type semiconductor layer 21 is a P-GaN layer, the doping element of the P-type semiconductor layer 21 is Mg, and the doping concentration of the P-type semiconductor layer 21 is 1016-5×1016cm-3。
A transparent conductive layer 22 is further grown on the P-type semiconductor layer 21, and a second electrode 23 is further grown on the transparent conductive layer 22. A first electrode 24 is formed on the exposed platform of the N-type semiconductor layer 21, a second electrode 23 is formed on the P-type semiconductor layer 21, the first electrode 24 and the second electrode 23 may be made of titanium, aluminum, titanium or gold, and when current is injected into the quantum well light-emitting layer 18 through the first electrode 24 and the second electrode 23, electrons from the N-type semiconductor layer 16 and holes from the P-type semiconductor layer 21 are combined in the quantum well light-emitting layer 18, so that the quantum well light-emitting layer 18 generates light.
The light-emitting diode is provided with the low-temperature gallium nitride layer, the unintended doped gallium nitride layer, the gallium nitride superlattice layer and the superlattice insertion layer, so that the light-emitting quality of the light-emitting diode is improved. And the hole adjusting layer is arranged, so that the hole concentration of the holes transferred to the quantum well light-emitting layer can be improved, and the light-emitting efficiency of the light-emitting diode can be improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A light emitting diode based on a hole-adjusting layer, comprising:
a substrate layer (11);
a buffer layer (12) on the substrate layer (11);
a low temperature gallium nitride layer (13) on the buffer layer (12);
an unintentionally doped gallium nitride layer (14) on the low temperature gallium nitride layer (13);
a superlattice layer (15) on the unintentionally doped gallium nitride layer (14);
an N-type semiconductor layer (16) on the superlattice layer (15);
an N-type doped layer (17) on the N-type semiconductor layer (16);
a quantum well light emitting layer (18) on the N-type doped layer (17);
an electron blocking layer (19) on the quantum well light emitting layer (18);
the hole adjusting layer (20) is positioned on the electron blocking layer (19), and the hole adjusting layer (20) comprises a first undoped layer (201), a second undoped layer (202) and a P-type doped layer (203) which are sequentially stacked on the electron blocking layer (19);
and a P-type semiconductor layer (21) on the hole adjustment layer (20).
2. The led of claim 1, wherein the low temperature gan layer (13) has a thickness of 20-60 nm.
3. A light-emitting diode according to claim 1, characterized in that the thickness of the unintentionally doped gallium nitride layer (14) is 50-100 nm.
4. The led of claim 1, wherein the superlattice layer (15) is an aluminum gallium nitride superlattice layer.
5. The led of claim 1, wherein the superlattice layer (15) has a thickness of 50-100 nm.
6. The led of claim 1, wherein said N-type semiconductor layer (16) is an N-type AlGaN layer.
7. The led of claim 1, wherein said first undoped layer (201) is an undoped GaN layer.
8. The led of claim 1, wherein said second undoped layer (202) is an undoped AlGaN layer.
9. The led of claim 1, wherein the P-doped layer (203) is a P-type InGaP layer.
10. The led of claim 1, wherein said P-type doped layer (203) has Mg as a doping element, and said P-type doped layer (203) has a doping concentration of 1019-3×1019cm-3。
CN201811525624.XA 2018-12-13 2018-12-13 Light-emitting diode based on hole adjusting layer Pending CN111326622A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113013301A (en) * 2021-04-08 2021-06-22 厦门三安光电有限公司 Nitride light emitting diode
CN116230824A (en) * 2023-05-08 2023-06-06 江西兆驰半导体有限公司 High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113013301A (en) * 2021-04-08 2021-06-22 厦门三安光电有限公司 Nitride light emitting diode
CN116230824A (en) * 2023-05-08 2023-06-06 江西兆驰半导体有限公司 High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip
CN116230824B (en) * 2023-05-08 2023-07-18 江西兆驰半导体有限公司 High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip

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