CN111326628A - Light emitting diode based on N-type doped laminated layer and functional layer - Google Patents

Light emitting diode based on N-type doped laminated layer and functional layer Download PDF

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Publication number
CN111326628A
CN111326628A CN201811525634.3A CN201811525634A CN111326628A CN 111326628 A CN111326628 A CN 111326628A CN 201811525634 A CN201811525634 A CN 201811525634A CN 111326628 A CN111326628 A CN 111326628A
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layer
type
light
doped
emitting
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李建华
李全杰
刘向英
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to a light-emitting diode based on an N-type doped lamination layer and a functional layer, which comprises a substrate layer; the buffer layer is positioned on the substrate layer; the N-type semiconductor layer is positioned on the buffer layer; the N-type doping laminated layer is positioned on the N-type doping layer and comprises a plurality of first N-type doping layers and a plurality of second N-type doping layers; the quantum well light-emitting layer is positioned on the N-type doped laminated layer; the functional layer is positioned on the quantum well light-emitting layer and comprises an electron blocking layer, a first hole injection layer and a second hole injection layer; the P-type doping layer is positioned on the functional layer; and the P-type semiconductor layer is positioned on the P-type doped layer. The light-emitting diode is provided with the N-type doped laminated layer, so that the migration rate of electrons can be reduced, and the probability of radiation recombination of holes and electrons in the quantum well light-emitting layer can be improved by adjusting the migration rate of the electrons to the quantum well light-emitting layer, so that the light-emitting efficiency of the light-emitting diode is improved.

Description

Light emitting diode based on N-type doped laminated layer and functional layer
Technical Field
The invention relates to the technical field of light-emitting elements, in particular to a light-emitting diode based on an N-type doped laminated layer and a functional layer.
Background
A Light Emitting Diode (LED) is a light emitting device that emits ultraviolet, visible, or infrared light when a forward voltage is applied across a semiconductor p-n junction, and is a new generation of solid state light source. Because of its features of small size, long service life, low driving voltage, fast response speed, shock resistance, heat resistance, etc., the efficiency of light emitting diodes for semiconductor lighting is continuously improved in recent years.
At present, the light emitting diode generally comprises a substrate layer, a buffer layer, an N-type semiconductor layer, a multi-quantum well light emitting layer and a P-type semiconductor layer. Wherein the N-type semiconductor layer is used for providing electrons; the P-type semiconductor layer is used for providing holes, and when current flows, electrons provided by the N-type semiconductor layer and the holes provided by the P-type semiconductor layer enter the multi-quantum well light-emitting layer to be recombined and emit light.
However, at present, the mobility of electrons is much higher than that of holes, so that the number of electrons injected into the multiple quantum well light-emitting layer is too large, and the electrons are easy to transition from the multiple quantum well light-emitting layer to the P-type semiconductor layer to be non-radiatively recombined with the holes, thereby affecting the light-emitting efficiency of the light-emitting diode. And because the moving capacity of the electrons is far higher than that of the holes, the electrons generated by the N-type semiconductor layer can quickly enter the quantum well light-emitting layer, and the excess electrons are transited from the quantum well light-emitting layer to the P-type semiconductor layer, so that the electrons and the holes are subjected to non-radiative recombination, and the light-emitting efficiency of the light-emitting diode is influenced.
Disclosure of Invention
Therefore, in order to solve the technical defects and shortcomings of the prior art, the invention provides a light emitting diode based on an N-type doped laminated layer and a functional layer.
Specifically, an embodiment of the present invention provides a light emitting diode based on an N-type doped stack layer and a functional layer, including:
a substrate layer;
a buffer layer on the substrate layer;
an N-type semiconductor layer on the buffer layer;
the N-type doping laminated layer is positioned on the N-type doping layer and comprises a plurality of first N-type doping layers and a plurality of second N-type doping layers, wherein the first N-type doping layers and the second N-type doping layers are sequentially laminated on the N-type doping layers, and the doping concentration of the first N-type doping layers is greater than that of the second N-type doping layers;
the quantum well light-emitting layer is positioned on the N-type doped laminated layer;
the functional layer is positioned on the quantum well light-emitting layer and comprises an electron blocking layer, a first hole injection layer and a second hole injection layer which are sequentially stacked on the quantum well light-emitting layer, wherein the thickness of the first hole injection layer is smaller than that of the second hole injection layer;
the P-type doping layer is positioned on the functional layer;
and the P-type semiconductor layer is positioned on the P-type doped layer.
In one embodiment of the present invention, the first N-type doped layer is an N-type InGaN layer.
In one embodiment of the present invention, the doping element of the first N-type doped layer is Si, and the doping concentration of the first N-type doped layer is 1018cm-3-5×1018cm-3。
In one embodiment of the present invention, the second N-doped layer is an N-type AlGaN layer.
In one embodiment of the present invention, the doping element of the second N-type doped layer is Si, and the doping concentration of the second N-type doped layer is 1017cm-3-5×1017cm-3。
In an embodiment of the present invention, the doping concentration of each of the first N-type doping layer and the second N-type doping layer is lower than that of the N-type semiconductor layer.
In one embodiment of the present invention, the material of the electron blocking layer is AlxInyGa1-x-yN, wherein, 0<x≤0.4，0<y≤0.2。
In one embodiment of the present invention, the first hole injection layer is a P-type InGaN layer.
In one embodiment of the present invention, the second hole injection layer is a P-type AlGaN layer.
The embodiment of the invention has the following advantages:
the light-emitting diode is provided with the N-type doped laminated layer, so that the migration rate of electrons can be reduced, and the probability of radiation recombination of holes and electrons in the quantum well light-emitting layer can be improved by adjusting the migration rate of the electrons to the quantum well light-emitting layer, so that the light-emitting efficiency of the light-emitting diode is improved. And an electron blocking layer, a first hole injection layer and a second hole injection layer are sequentially stacked on the quantum well light-emitting layer, excess electrons can be effectively prevented from being transited from the quantum well light-emitting layer to the P-type semiconductor layer through the electron blocking layer, so that holes generated by the P-type semiconductor layer are avoided being consumed, the concentration of the holes injected into the quantum well light-emitting layer is improved through the first hole injection layer and the second hole injection layer, and the light-emitting efficiency of the light-emitting diode is improved.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a light emitting diode based on an N-type doped stack layer and a functional layer according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a light emitting diode based on an N-type doped stack layer and a functional layer according to an embodiment of the present invention. An embodiment of the present invention provides a light emitting diode based on an N-type doped stack and a functional layer, the light emitting diode comprising:
a substrate layer 11;
specifically, the material of the substrate layer 11 may be sapphire, silicon carbide, zinc oxide, gallium nitride, aluminum nitride, or other material suitable for crystal epitaxial growth.
A buffer layer 12 on the substrate layer 11;
further, the material of the buffer layer 12 is GaN.
According to the embodiment of the invention, the buffer layer 12 is grown on the substrate layer, so that defects entering the N-type semiconductor layer, the quantum well light-emitting layer and the P-type semiconductor layer can be reduced, and the light-emitting quality of the light-emitting diode is improved.
An N-type semiconductor layer 13 on the buffer layer 13;
further, the N-type semiconductor layer 13 is an N-GaN layer, and the doping element of the N-type semiconductor layer 13 is Si, the doping concentration of the N-type semiconductor layer 13 may be 1019-3 × 1019 cm-3.
Further, the N-type semiconductor layer 13 has a mesa, and the first electrode 21 is formed on the mesa of the N-type semiconductor layer 13.
The N-type doped lamination layer 14 is positioned on the N-type semiconductor layer 13, the N-type doped lamination layer 14 comprises a plurality of first N-type doped layers 141 and a plurality of second N-type doped layers 142, wherein the plurality of first N-type doped layers 141 and the plurality of second N-type doped layers 142 are sequentially laminated on the N-type semiconductor layer 13, and the doping concentration of the first N-type doped layers 141 is greater than that of the second N-type doped layers 142;
further, the first N-type doped layer 141 is an N-type InGaN layer.
Further, the doping element of the first N-type doping layer 141 is Si, and the doping concentration of the first N-type doping layer 141 is 1018cm-3-5×1018cm-3。
Further, the second N-type doped layer 142 is an N-type AlGaN layer.
Further, the doping element of the second N-type doped layer 142 is Si, and the doping concentration of the second N-type doped layer 142 is 1017cm-3-5×1017cm-3。
Further, the doping concentration of each of the first N-type doping layer 141 and the second N-type doping layer 142 is lower than that of the N-type semiconductor layer 13.
According to the embodiment of the invention, the first N-type doping layer 141 and the second N-type doping layer 142 which are sequentially stacked are grown on the N-type semiconductor layer 13, and the concentration of the first N-type doping layer 141 is greater than that of the second N-type doping layer 142, so that the migration rate of electrons can be reduced, and the hole concentration and the electron concentration in the quantum well light-emitting layer are equivalent by reducing the rate of electron migration to the quantum well light-emitting layer, so that the light-emitting efficiency of the light-emitting diode is improved. In addition, the first N-type doped layer 141 is an N-type InGaN layer and the second N-type doped layer 142 is an N-type AlGaN layer, which can reduce dislocation and cracks of long lattices and prevent extension of defects.
In the embodiment, the doping concentrations of the first N-type doping layer 141 and the second N-type doping layer 142 are lower than the doping concentration of the N-type semiconductor layer 13, so that the voltage of the LED device can be effectively reduced, the antistatic property of the LED device can be improved, and the light emitting efficiency of the LED device can be improved.
A quantum well light-emitting layer 15 on the N-type doped stack 14;
further, the quantum well light emitting layer 15 is an indium-doped gallium nitride layer.
A functional layer 16 located on the quantum well light-emitting layer 15, wherein the functional layer 16 includes an electron blocking layer 161, a first hole injection layer 162, and a second hole injection layer 163 sequentially stacked on the quantum well light-emitting layer 15, wherein the thickness of the first hole injection layer 162 is smaller than that of the second hole injection layer 163;
further, the material of the electron blocking layer 161 is Alx1InyGa1-x1-yN, wherein, 0<x1≤0.4，0<y≤0.2。
Further, the thickness of the electron blocking layer 161 is 100-200 nm.
Further, the first hole injection layer 162 is a P-type InGaN layer.
Further, the first hole injection layer 162 has a thickness of 20 to 100 nm.
Further, the second hole injection layer 163 is a P-type AlGaN layer.
Further, the thickness of the second hole injection layer 163 is 100-200 nm.
In the embodiment of the invention, the electron blocking layer is arranged between the P-type doping layer 17 and the quantum well light-emitting layer 15, and the material of the electron blocking layer 161 is Alx1InyGa1-x1-yN, since the barrier of aluminum is high, the electron blocking layer 161 can effectively prevent electrons generated by the N-type semiconductor layer 13 from entering the P-type semiconductor layer 18, thereby preventing non-radiative recombination of electrons and holes in the P-type semiconductor layer 18, preventing the reduction of hole concentration due to electron transition, and improving the light emitting efficiency of the light emitting diode; and the material of the first hole injection layer 162 is P-type InGaN, and the material of the second hole injection layer 163 is P-type AlGaN, so that the heterostructure energy band can be effectively adjusted to form two-dimensional electron gas, thereby increasing the number and efficiency of holes generated by the P-type semiconductor layer 18 injected into the quantum well light-emitting layer 15, and further improving the light-emitting efficiency of the light-emitting diode.
A P-type doped layer 17 located on the functional layer 16;
further, the P-type doped layer 17 is an AlGaN layer, and the doping element of the P-type doped layer 17 is Mg;
further, the doping concentration of the P-type doping layer 17 is higher than that of the P-type semiconductor layer 18, and the doping concentration of the P-type semiconductor layer 18 is 1/5-1/3 of the doping concentration of the P-type doping layer 17;
and a P-type semiconductor layer 18 on the P-type doped layer 17.
Further, the P-type semiconductor layer 18 is a P-GaN layer, the doping element of the P-type semiconductor layer 18 is Mg, and the doping concentration of the P-type semiconductor layer 18 is 1019～1020cm-3。
Because the mobility of electrons is far higher than that of holes, electrons generated by the N-type semiconductor layer 13 can rapidly enter the quantum well light-emitting layer 15, and the capability of injecting the holes generated by the P-type semiconductor layer 18 into the quantum well light-emitting layer 15 can be improved by adding the P-type doping layer 17 and setting the doping concentration of the P-type doping layer 17 to be higher than that of the P-type semiconductor layer 18, so that the influence on the light-emitting efficiency and the light-emitting quality due to excessive electrons of the quantum well light-emitting layer 15 is avoided.
A transparent conductive layer 19 is further grown on the P-type semiconductor layer 18, and a second electrode 20 is further grown on the transparent conductive layer 19. A first electrode 21 is formed on the exposed platform of the N-type semiconductor layer 13, a second electrode 20 is formed on the P-type semiconductor layer 18, the first electrode 21 and the second electrode 20 may be made of titanium, aluminum, titanium or gold, and when current is injected into the quantum well light-emitting layer 15 through the first electrode 21 and the second electrode 20, electrons from the N-type semiconductor layer 13 and holes from the P-type semiconductor layer 18 are combined in the quantum well light-emitting layer 15, so that the quantum well light-emitting layer 15 generates light.
The light-emitting diode is provided with the N-type doped laminated layer, so that the migration rate of electrons can be reduced, and the probability of radiation recombination of holes and electrons in the quantum well light-emitting layer can be improved by adjusting the migration rate of the electrons to the quantum well light-emitting layer, so that the light-emitting efficiency of the light-emitting diode is improved. And an electron blocking layer, a first hole injection layer and a second hole injection layer are sequentially stacked on the quantum well light-emitting layer, excess electrons can be effectively prevented from being transited from the quantum well light-emitting layer to the P-type semiconductor layer through the electron blocking layer, so that holes generated by the P-type semiconductor layer are avoided being consumed, the concentration of the holes injected into the quantum well light-emitting layer is improved through the first hole injection layer and the second hole injection layer, and the light-emitting efficiency of the light-emitting diode is improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (9)

1. A light emitting diode based on an N-type doped stack and a functional layer, comprising:
a substrate layer (11);
a buffer layer (12) on the substrate layer (11);
an N-type semiconductor layer (13) on the buffer layer (12);
the N-type doped lamination layer (14) is positioned on the N-type semiconductor layer (13), the N-type doped lamination layer (14) comprises a plurality of first N-type doped layers (141) and a plurality of second N-type doped layers (142), the plurality of first N-type doped layers (141) and the plurality of second N-type doped layers (142) are sequentially laminated on the N-type semiconductor layer (13), and the doping concentration of the first N-type doped layers (141) is greater than that of the second N-type doped layers (142);
a quantum well light emitting layer (15) on the N-type doped stack (14);
the functional layer (16) is positioned on the quantum well light-emitting layer (15), wherein the functional layer (16) comprises an electron blocking layer (161), a first hole injection layer (162) and a second hole injection layer (163) which are sequentially laminated on the quantum well light-emitting layer (15), and the thickness of the first hole injection layer (162) is smaller than that of the second hole injection layer (163);
a P-type doped layer (17) on the functional layer (16);
and the P-type semiconductor layer (18) is positioned on the P-type doped layer (17).
2. The led of claim 1, wherein the first N-doped layer (141) is an N-type InGaN layer.
3. The led of claim 1, wherein said first N-doped layer (141) is doped with Si, and said first N-doped layer (141) has a doping concentration of 1018cm-3-5×1018cm-3。
4. The led of claim 1, wherein said second N-doped layer (142) is an N-AlGaN layer.
5. The led of claim 1, wherein said second N-doped layer (142) isThe doping element is Si, and the doping concentration of the second N-type doping layer (142) is 1017cm-3-5×1017cm-3。
6. The led of claim 1, wherein the first N-doped layer (141) and the second N-doped layer (142) each have a doping concentration lower than the doping concentration of the N-type semiconductor layer (13).
7. The led of claim 1, wherein the electron blocking layer (161) is made of AlxInyGa1-x-yN, wherein, 0<x≤0.4，0<y≤0.2。
8. The led of claim 1, wherein the first hole injection layer (162) is a P-type InGaN layer.
9. The led of claim 1, wherein said second hole injection layer (163) is a P-type AlGaN layer.
CN201811525634.3A 2018-12-13 2018-12-13 Light emitting diode based on N-type doped laminated layer and functional layer Pending CN111326628A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115132892A (en) * 2021-12-30 2022-09-30 淮安澳洋顺昌光电技术有限公司 Light emitting diode epitaxial structure and light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115132892A (en) * 2021-12-30 2022-09-30 淮安澳洋顺昌光电技术有限公司 Light emitting diode epitaxial structure and light emitting diode
CN115132892B (en) * 2021-12-30 2024-02-27 淮安澳洋顺昌光电技术有限公司 Light-emitting diode epitaxial structure and light-emitting diode

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