CN102157646A - Nitride LED structure and preparation method thereof - Google Patents
Nitride LED structure and preparation method thereof Download PDFInfo
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- CN102157646A CN102157646A CN2011101124296A CN201110112429A CN102157646A CN 102157646 A CN102157646 A CN 102157646A CN 2011101124296 A CN2011101124296 A CN 2011101124296A CN 201110112429 A CN201110112429 A CN 201110112429A CN 102157646 A CN102157646 A CN 102157646A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 35
- 239000007924 injection Substances 0.000 claims abstract description 35
- 230000008859 change Effects 0.000 claims description 51
- 238000005036 potential barrier Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
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- 238000004020 luminiscence type Methods 0.000 description 2
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- 238000005215 recombination Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- 229910000905 alloy phase Inorganic materials 0.000 description 1
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Abstract
The invention discloses a nitride light-emitting diode (LED) structure. An indium gallium nitrogen (InGaN) layer with gradually varied indium (In) content is inserted between an N-type electron injection layer and a multi-quantum well active layer so as to release a stress between the multi-quantum well active layer and the N-type electron injection layer and improve the internal quantum efficiency and the luminous intensity of a device. The invention also discloses a preparation method for the nitride LED structure. In the method, the InGaN layer with gradually varied In content is inserted between the N-type electron injection layer and the multi-quantum well active layer so as to release the stress between the multi-quantum well active layer and the N-type electron injection layer and improve the internal quantum efficiency and the luminous intensity of the device.
Description
Technical field
The present invention relates to the LED preparing technical field, relate in particular to a kind of nitride LED structure and preparation method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, can directly electricity be converted to light.After the two ends of semiconductor PN add forward voltage, inject the minority carrier of PN junction and majority carrier and take place compoundly, emit energy and cause photo emissions, directly send the light that color is red, orange, yellow, green, blue, blue, purple.
Along with the exploitation of using based on the high-brightness LED of nitride, new generation of green environment protection solid lighting source-nitride LED has become the focus that people pay close attention to.Having wide direct band gap, strong chemical bond, premium properties such as high temperature resistant, anticorrosive based on the III hi-nitride semiconductor material of GaN, InGaN and AlGaN alloy, is the ideal material of making short wavelength's high brightness luminescent device.
Common GaN base LED luminescent device adopts the P-N junction structure, and is provided with multi-quantum pit structure between P type semiconductor and N type semiconductor, and described multi-quantum pit structure is as active area.When device was worked, recombination luminescence in the quantum well active area was imported from the N type district and the p type island region at active area two ends respectively in electronics and hole.Please refer to Fig. 1, Fig. 1 is the profile of existing nitride LED structure, as shown in Figure 1, low temperature buffer layer 102, plain nitride layer 103, N type electron injecting layer 104, multiple quantum well active layer 105, electronic barrier layer 106 and P type hole injection layer 107 that existing nitride LED structure comprises substrate 101, forms successively on described substrate 101, wherein, described N type electron injecting layer 104 links to each other with N type electrode 108, be formed with transparent electrode layer 109 on the described P type hole injection layer 107, preparation has P type electrode 110 on the described transparent electrode layer 109.
Band structure about existing nitride LED structure please refer to Fig. 2, and Fig. 2 can be with schematic diagram for existing nitride LED structure, and as shown in Figure 2, the multiple quantum well active layer of existing nitride LED structure directly links to each other with N type electron injecting layer.
Owing to there is not commercial GaN body material substrate, so common GaN base luminescent device all is to utilize the MOCVD technology growth on foreign substrate, Al for example
2O
3, SiC and Si etc.; Will cause like this and contain very highdensity linear dislocation (＞10 in the epitaxial film
8Cm
-2).Different with other III-V compound semiconductor light emitting devices is that although have highdensity like this dislocation, gallium nitride based LED still has very high luminous intensity.Research thinks that this mainly is owing to phenomenon of phase separation has taken place the InGaN alloy as light-emitting active layer, forms the InGaN quantum dot of high In ingredient and the InGaN matrix of low In component.The InGaN quantum dot of high In ingredient can produce capture effect to electronics and the hole of injecting quantum well, charge carrier do not arrive defective carry out non-radiative compound before, just radiation recombination is luminous.So, the form of InGaN in the control quantum well, i.e. the degree of alloy phase separation is one of key means of control gallium nitride based LED internal quantum efficiency and luminous efficiency.
Studies show that under the effect of plane stress, the effect that is separated of the InGaN alloy in the nitride LED active layer quantum well can be suppressed, can not generate fully and contain the high InGaN quantum dots structure of In component.So for improving the luminous efficiency of device, the plane stress of regulating the InGaN quantum well layer is one of key technology.
Moreover,, discharge the stress in the active layer, can also alleviate the piezoelectric polarization effect of InGaN/GaN heterostructure in the active layer by the growth InGaN transition zone close with Multiple Quantum Well active area lattice constant.Alleviate electronics and hole wave function separating spatially, improve the combined efficiency of charge carrier, thereby improve the luminous efficiency of LED device.
Common, the quantum well active area of InGaN/GaN is grown on the N type GaN layer.Because the lattice constant of InN is bigger than GaN's, so be grown directly upon the effect that InGaN quantum well layer on the GaN can be subjected to the plane double shaft compression.For alleviating the stress of InGaN layer, the researcher has taked diverse ways.Such as, between active layer and n type gallium nitride, insert additional InGaN/GaN Multiple Quantum Well, insert the InGaN thin layer of low In component etc.
Yet, because InGaN is different with the lattice constant of GaN, can form heterojunction in the said method, thereby produce crystal defect, reduce the quality of crystal.
Therefore, how to control the plane stress of active area,, become the technical problem that present industry is needed solution badly to improve the luminosity of nitride LED.
Summary of the invention
The object of the present invention is to provide a kind of nitride LED structure and preparation method thereof, to improve the performance of nitride LED.
For addressing the above problem, the present invention proposes a kind of nitride LED structure, this nitride LED structure comprises N type electron injecting layer at least, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, and be provided with an electronic barrier layer between described multiple quantum well active layer and the described P type hole injection layer, also be provided with the InGaN layer of an In content gradual change between described N type electron injecting layer and the described multiple quantum well active layer, wherein, the close described N type electron injecting layer of the part that In content in the described InGaN layer is low, the close described multiple quantum well active layer of the part that In content is high.
Optionally, the highest In content in the InGaN layer of described In content gradual change is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer.
Optionally, the highest In content in the InGaN layer of described In content gradual change is greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the potential well of the quantum well in the described multiple quantum well active layer is by In
xGa
1-xN forms, and the potential barrier of quantum well is by In
yGa
1-yN forms, wherein 0＜x＜1.0,0＜y＜1.0, and x＞y.
Optionally, the thickness range of the InGaN layer of described In content gradual change is 0.001um～1.0um.
Optionally, the part of the close described N type electron injecting layer in the InGaN layer of the described In content gradual change Si that mixed.
Optionally, low temperature buffer layer and plain nitride layer that this nitride LED structure also comprises substrate, grows successively on described substrate, be formed with described N type electron injecting layer, the InGaN layer of described In content gradual change, described multiple quantum well active layer, described electronic barrier layer and described P type hole injection layer on the described plain nitride layer successively, described N type electron injecting layer links to each other with N type electrode, be formed with transparent electrode layer on the described P type hole injection layer, preparation has P type electrode on the described transparent electrode layer.
Simultaneously, for addressing the above problem, the present invention also proposes a kind of preparation method of nitride LED structure, and this method comprises the steps:
Substrate is provided;
On described substrate, form InGaN layer, multiple quantum well active layer, electronic barrier layer and the P type hole injection layer of low temperature buffer layer, plain nitride layer, N type electron injecting layer, the gradual change of In content successively; Wherein, the close described N type electron injecting layer of the part that the In content in the described InGaN layer is low, the close described multiple quantum well active layer of the part that In content is high;
The InGaN layer of the described P type of etching hole injection layer, described electronic barrier layer, described multiple quantum well active layer and the gradual change of described In content successively, form an important actor face, and expose described N type electron injecting layer, preparation N type electrode on the N type electron injecting layer that exposes;
Preparation transparent electrode layer and P type electrode on the described P type hole injection layer after the etching.
Optionally, the highest In content in the InGaN layer of described In content gradual change is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer.
Optionally, the highest In content in the InGaN layer of described In content gradual change is greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
Optionally, the potential well of the quantum well in the described multiple quantum well active layer is by In
xGa
1-xN forms, and the potential barrier of quantum well is by In
yGa
1-yN forms, wherein 0＜x＜1.0,0＜y＜1.0, and x＞y.
Optionally, the thickness range of the InGaN layer of described In content gradual change is 0.001um～1.0um.
Optionally, the part of the close described N type electron injecting layer in the InGaN layer of the described In content gradual change Si that mixed.
Compared with prior art, nitride LED structure provided by the invention, by between N type electron injecting layer and multiple quantum well active layer, inserting the InGaN layer of an In content gradual change, make the lattice constant of semi-conducting material carry out the transition to the active area that contains InGaN gradually, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer from N type GaN electron injecting layer.The component of In increases gradually from 0%, does not have to form additional heterojunction like this between N type GaN and gradual change InGaN.Make active area can be at stress very little or do not have to grow under the condition of stress, promote the generation that is separated of InGaN alloy, improve the internal quantum efficiency and the luminous intensity of device.
Compared with prior art, the preparation method of nitride LED structure provided by the invention, InGaN layer by growth one In content gradual change between N type electron injecting layer and multiple quantum well active layer, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer, improve the internal quantum efficiency and the luminous intensity of device.
Description of drawings
Fig. 1 is the profile of existing nitride LED structure;
Fig. 2 can be with schematic diagram for existing nitride LED structure;
The profile of the nitride LED structure that Fig. 3 provides for the embodiment of the invention;
Can be with schematic diagram for first kind of the nitride LED structure that Fig. 4 provides for the embodiment of the invention;
Can be with schematic diagram for second kind of the nitride LED structure that Fig. 5 provides for the embodiment of the invention.
Embodiment
Nitride LED structure that the present invention is proposed below in conjunction with the drawings and specific embodiments and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of nitride LED structure is provided, it inserts the InGaN layer of an In content gradual change between N type electron injecting layer and multiple quantum well active layer, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer, improve the internal quantum efficiency and the luminous intensity of device; Simultaneously, a kind of preparation method of nitride LED structure also is provided, InGaN layer by growth one In content gradual change between N type electron injecting layer and multiple quantum well active layer, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer, improve the internal quantum efficiency and the luminous intensity of device.
Please refer to Fig. 3, the profile of the nitride LED structure that Fig. 3 provides for the embodiment of the invention, as shown in Figure 3, the nitride LED structure that the embodiment of the invention provides comprises substrate 201, the low temperature buffer layer 202 that on described substrate 201, forms successively, plain nitride layer 203, N type electron injecting layer 204, the InGaN layer 205 of In content gradual change, multiple quantum well active layer 206, electronic barrier layer 207 and P type hole injection layer 208, wherein, described N type electron injecting layer 204 links to each other with N type electrode 209, be formed with transparent electrode layer 210 on the described P type hole injection layer 208, preparation has P type electrode 211 on the described transparent electrode layer 210; Wherein, the close described N type electron injecting layer 204 of the part that the In content in the described InGaN layer 205 is low, the close described multiple quantum well active layer 206 of the part that In content is high.
The nitride LED structure that the embodiment of the invention provides, by between N type electron injecting layer and multiple quantum well active layer, inserting the InGaN layer of an In content gradual change, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer, improve the internal quantum efficiency and the luminous intensity of device.
The band structure of the nitride LED structure that provides about the embodiment of the invention, please refer to Fig. 4 and Fig. 5, wherein, schematic diagram can be with for first kind of the LED structure that Fig. 4 provides for the embodiment of the invention, schematic diagram can be with for second kind of the LED structure that Fig. 5 provides for the embodiment of the invention.
To shown in Figure 5, the In content in the InGaN layer of the In content gradual change that the embodiment of the invention provides can have following dual mode as Fig. 4:
(1) the highest In content in the InGaN layer of described In content gradual change is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer; The i.e. part of the InGaN layer that contacts with described multiple quantum well active layer, its In content is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, as shown in Figure 4;
(2) the highest In content in the InGaN layer of described In content gradual change is greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer; The i.e. part of the InGaN layer that contacts with described multiple quantum well active layer, its In content be greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer, as shown in Figure 5.
By the In content of the highest In content in the InGaN layer of controlling the gradual change of described In content less than the potential well of the quantum well in the described multiple quantum well active layer, the light that can avoid sending in the quantum well in the described multiple quantum well active layer is absorbed by the InGaN layer of described In content gradual change.
Further, described N type electron injecting layer 204, P type hole injection layer 208, multiple quantum well active layer 206 and electronic barrier layer 207 are by Al
xGa
yIn
1-x-yN forms, wherein, and 0＜x＜1,0＜x+y＜1.For example, described N type electron injecting layer 204 can be N type GaN, and described P type hole injection layer 208 can be P type GaN, and described electronic barrier layer 207 can be P type AlGaN.
Further, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer 204, P type hole injection layer 208 and the quantum well in the multiple quantum well active layer 206 is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 206.
Further, the potential well of the quantum well in the described multiple quantum well active layer 206 is by In
xGa
1-xN forms, and the potential barrier of quantum well is by In
yGa
1-yN forms, wherein 0＜x＜1.0,0＜y＜1.0, and x＞y; Thereby the energy gap of potential barrier that guarantees described quantum well is greater than the energy gap of the potential well of quantum well.
Further, the thickness range of the InGaN layer 205 of described In content gradual change is 0.001um～1.0um; Certainly, the present invention is not as limit, because the effect of the InGaN layer 205 of described In content gradual change is the plane stress that discharges in the described multiple quantum well active layer 206, therefore, its thickness and the highest In content can be adjusted according to the structure of described multiple quantum well active layer 206.
Further, the part of the close described N type electron injecting layer in the InGaN layer 205 of the described In content gradual change Si that mixed; Be arranged in the P-N knot with the described mqw active layer 206 of scalable.
In conjunction with Fig. 3, the preparation method of the nitride LED structure that the embodiment of the invention provides comprises the steps:
On described substrate 201, form InGaN layer 205, multiple quantum well active layer 206, electronic barrier layer 207 and the P type hole injection layer 208 of low temperature buffer layer 202, plain nitride layer 203, N type electron injecting layer 204, the gradual change of In content successively; Wherein, the close described N type electron injecting layer 204 of the part that the In content in the described InGaN layer 205 is low, the close described multiple quantum well active layer 206 of the part that In content is high;
The InGaN layer 205 of the described P type of etching hole injection layer 208, described electronic barrier layer 204, described multiple quantum well active layer 206 and the gradual change of described In content successively, form an important actor face, and expose described N type electron injecting layer 204, preparation N type electrode 209 on the N type electron injecting layer 204 that exposes;
Preparation transparent electrode layer 210 and P type electrode 211 on the described P type hole injection layer 208 after the etching.
Wherein, the In content in the InGaN layer of the In content gradual change that provides of the embodiment of the invention can have following dual mode:
(1) the highest In content in the InGaN layer of described In content gradual change is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer; The i.e. part of the InGaN layer that contacts with described multiple quantum well active layer, its In content is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, as shown in Figure 4;
(2) the highest In content in the InGaN layer of described In content gradual change is greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer; The i.e. part of the InGaN layer that contacts with described multiple quantum well active layer, its In content be greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer, as shown in Figure 5.
By the In content of the highest In content in the InGaN layer of controlling the gradual change of described In content less than the potential well of the quantum well in the described multiple quantum well active layer, make the energy gap of the energy gap of graded bedding greater than quantum well, the light that can avoid sending in the quantum well in the described multiple quantum well active layer is absorbed by the InGaN layer of described In content gradual change.
Further, the energy gap of the potential barrier of the energy gap of the energy gap of described N type electron injecting layer 204, P type hole injection layer 208 and the quantum well in the multiple quantum well active layer 206 is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer 206.
Further, the potential well of the quantum well in the described multiple quantum well active layer 206 is by In
xGa
1-xN forms, and the potential barrier of quantum well is by In
yGa
1-yN forms, wherein 0＜x＜1.0,0＜y＜1.0, and x＞y; Thereby the energy gap of potential barrier that guarantees described quantum well is greater than the energy gap of the potential well of quantum well.
Further, the thickness range of the InGaN layer 205 of described In content gradual change is 0.001um～1.0um; Certainly, the present invention is not as limit, because the effect of the InGaN layer 205 of described In content gradual change is the plane stress that discharges in the described multiple quantum well active layer 206, therefore, its thickness and the highest In content can be adjusted according to the structure of described multiple quantum well active layer 206.
Further, the part of the close described N type electron injecting layer in the InGaN layer 205 of the described In content gradual change Si that mixed; Be arranged in the P-N knot with the described mqw active layer 206 of scalable.
In sum, the invention provides a kind of nitride LED structure, it inserts the InGaN layer of an In content gradual change between N type electron injecting layer and multiple quantum well active layer, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer, improve the internal quantum efficiency and the luminous intensity of device; Simultaneously, a kind of preparation method of nitride LED structure also is provided, InGaN layer by growth one In content gradual change between N type electron injecting layer and multiple quantum well active layer, thereby discharge the stress between multiple quantum well active layer and the N type electron injecting layer, improve the internal quantum efficiency and the luminous intensity of device.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (15)
1. nitride LED structure, at least comprise N type electron injecting layer, P type hole injection layer and be clipped in described N type electron injecting layer and described P type hole injection layer between multiple quantum well active layer, and be provided with an electronic barrier layer between described multiple quantum well active layer and the described P type hole injection layer, it is characterized in that, also be provided with the InGaN layer of an In content gradual change between described N type electron injecting layer and the described multiple quantum well active layer, wherein, the close described N type electron injecting layer of the part that In content in the described InGaN layer is low, the close described multiple quantum well active layer of the part that In content is high.
2. nitride LED structure as claimed in claim 1 is characterized in that, the highest In content in the InGaN layer of described In content gradual change is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer.
3. nitride LED structure as claimed in claim 1, it is characterized in that, the highest In content in the InGaN layer of described In content gradual change is greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer.
4. nitride LED structure as claimed in claim 3, it is characterized in that the energy gap of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the potential barrier of the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
5. nitride LED structure as claimed in claim 4 is characterized in that the potential well of the quantum well in the described multiple quantum well active layer is by In
xGa
1-xN forms, and the potential barrier of quantum well is by In
yGa
1-yN forms, wherein 0＜x＜1.0,0＜y＜1.0, and x＞y.
6. nitride LED structure as claimed in claim 1 is characterized in that, the thickness range of the InGaN layer of described In content gradual change is 0.001um～1.0um.
7. nitride LED structure as claimed in claim 1 is characterized in that, the part of the close described N type electron injecting layer in the InGaN layer of the described In content gradual change Si that mixed.
8. nitride LED structure as claimed in claim 1, it is characterized in that, this nitride LED structure also comprises substrate, the low temperature buffer layer and the plain nitride layer of on described substrate, growing successively, be formed with described N type electron injecting layer on the described plain nitride layer successively, the InGaN layer of described In content gradual change, described multiple quantum well active layer, described electronic barrier layer and described P type hole injection layer, described N type electron injecting layer links to each other with N type electrode, be formed with transparent electrode layer on the described P type hole injection layer, preparation has P type electrode on the described transparent electrode layer.
9. the preparation method of a nitride LED structure is characterized in that, comprises the steps:
Substrate is provided;
On described substrate, form InGaN layer, multiple quantum well active layer, electronic barrier layer and the P type hole injection layer of low temperature buffer layer, plain nitride layer, N type electron injecting layer, the gradual change of In content successively; Wherein, the close described N type electron injecting layer of the part that the In content in the described InGaN layer is low, the close described multiple quantum well active layer of the part that In content is high;
The InGaN layer of the described P type of etching hole injection layer, described electronic barrier layer, described multiple quantum well active layer and the gradual change of described In content successively, form an important actor face, and expose described N type electron injecting layer, preparation N type electrode on the N type electron injecting layer that exposes;
Preparation transparent electrode layer and P type electrode on the described P type hole injection layer after the etching.
10. the preparation method of nitride LED structure as claimed in claim 10 is characterized in that, the highest In content in the InGaN layer of described In content gradual change is less than or equal to the In content of the potential barrier of the quantum well in the described multiple quantum well active layer.
11. the preparation method of nitride LED structure as claimed in claim 10, it is characterized in that, the highest In content in the InGaN layer of described In content gradual change is greater than the In content of the potential barrier of the quantum well in the described multiple quantum well active layer, but less than the In content of the potential well of the quantum well in the described multiple quantum well active layer.
12. the preparation method of nitride LED structure as claimed in claim 13, it is characterized in that the energy gap of the energy gap of the energy gap of described N type electron injecting layer, P type hole injection layer and the potential barrier of the quantum well in the multiple quantum well active layer is all greater than the energy gap of the potential well of the quantum well in the described multiple quantum well active layer.
13. the preparation method of nitride LED structure as claimed in claim 14 is characterized in that, the potential well of the quantum well in the described multiple quantum well active layer is by In
xGa
1-xN forms, and the potential barrier of quantum well is by In
yGa
1-yN forms, wherein 0＜x＜1.0,0＜y＜1.0, and x＞y.
14. the preparation method of nitride LED structure as claimed in claim 10 is characterized in that, the thickness range of the InGaN layer of described In content gradual change is 0.001um～1.0um.
15. the preparation method of nitride LED structure as claimed in claim 10 is characterized in that, the part of the close described N type electron injecting layer in the InGaN layer of the described In content gradual change Si that mixed.
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| CN102570308A (en) * | 2012-01-16 | 2012-07-11 | 苏州纳睿光电有限公司 | Nitride semiconductor laser |
| CN103972345A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN104134732A (en) * | 2014-07-24 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | Epitaxial structure for solving efficiency drop of GaN-based LED (Light Emitting Diode) |
| CN104157760A (en) * | 2014-08-06 | 2014-11-19 | 湘能华磊光电股份有限公司 | Epitaxial wafer of LED (Light Emitting Diode) and manufacturing method thereof |
| CN104393128A (en) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial structure with SiC substrate and preparation method of nitride LED epitaxial structur |
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| CN102570308A (en) * | 2012-01-16 | 2012-07-11 | 苏州纳睿光电有限公司 | Nitride semiconductor laser |
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
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| CN108565319B (en) * | 2013-01-25 | 2020-10-02 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting element |
| CN103972345A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN108565319A (en) * | 2013-01-25 | 2018-09-21 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN108550669A (en) * | 2013-01-25 | 2018-09-18 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN108305922A (en) * | 2013-01-25 | 2018-07-20 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light emitting element |
| CN104134732A (en) * | 2014-07-24 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | Epitaxial structure for solving efficiency drop of GaN-based LED (Light Emitting Diode) |
| CN104134732B (en) * | 2014-07-24 | 2017-09-19 | 映瑞光电科技(上海)有限公司 | An epitaxial structure to improve the efficiency drop of GaN-based LEDs |
| CN104157760A (en) * | 2014-08-06 | 2014-11-19 | 湘能华磊光电股份有限公司 | Epitaxial wafer of LED (Light Emitting Diode) and manufacturing method thereof |
| CN104393128A (en) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial structure with SiC substrate and preparation method of nitride LED epitaxial structur |
| CN104393128B (en) * | 2014-11-19 | 2017-03-15 | 江苏巨晶新材料科技有限公司 | A kind of nitride LED epitaxial structure of use SiC substrate and preparation method thereof |
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| CN104733579B (en) * | 2015-01-20 | 2018-05-08 | 扬州德豪润达光电有限公司 | Light emitting semiconductor device and preparation method thereof |
| CN105047772B (en) * | 2015-06-08 | 2018-03-23 | 中国科学院半导体研究所 | The structure and growing method of green LED chip epitaxial layer |
| CN105047772A (en) * | 2015-06-08 | 2015-11-11 | 中国科学院半导体研究所 | Structure of green-light LED chip epitaxial layer, and growth method |
| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN109004074A (en) * | 2018-08-09 | 2018-12-14 | 聚灿光电科技股份有限公司 | LED epitaxial structure and preparation method thereof |
| CN114628557A (en) * | 2020-12-10 | 2022-06-14 | 聚灿光电科技（宿迁）有限公司 | LED epitaxial structure and preparation method thereof, and LED device |
| CN114628557B (en) * | 2020-12-10 | 2025-04-04 | 聚灿光电科技（宿迁）有限公司 | LED epitaxial structure and preparation method thereof and LED device |
| CN112786751A (en) * | 2021-01-19 | 2021-05-11 | 中国科学院长春光学精密机械与物理研究所 | N-polar nitride template, N-polar nitride device and preparation method thereof |
| CN113097353A (en) * | 2021-04-02 | 2021-07-09 | 厦门乾照光电股份有限公司 | Ultraviolet LED and manufacturing method thereof |
| CN114094443A (en) * | 2022-01-21 | 2022-02-25 | 苏州长光华芯光电技术股份有限公司 | High-strain semiconductor structure and preparation method thereof |
| CN114094443B (en) * | 2022-01-21 | 2022-04-12 | 苏州长光华芯光电技术股份有限公司 | High-strain semiconductor structure and preparation method thereof |
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