CN101685844A - GaN-based Single chip white light emitting diode epitaxial material - Google Patents
GaN-based Single chip white light emitting diode epitaxial material Download PDFInfo
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Abstract
The invention relates to GaN-based Single chip white light emitting diode epitaxial material comprising a substrate and also comprising an initial growth layer, an intrinsic GaN buffer layer, an n-type GaN layer, a stress relaxation layer, an InGaN multiple quantum well structure light emitting layer, a p-type AlGaN sandwich layer and a p-type GaN layer which grow in sequence on the substrate. Thestress relaxation layer is an InGaN/GaN superlattice stress modulation layer which comprises InGaN layers and GaN layers, which are grown alternatively; the InGaN layers and GaN layers have the growth cycle of 6-500 and the corresponding thickness of 10 nm to 3 Mum; and the In components in the InGaN layers are in the range of 1-35 percent. Because the stress-relaxed InGaN/GaN superlattice stressmodulation layer is added between the n-type GaN layer and a multiple quantum light emitting layer, the In segregation effect is strengthened, InGaN quantum dots with different components are formed,and the mixing of different-wave light emitted by the InGaN quantum dots realizes the white light emitting. The cost of the white light emitting diode is reduced radically, the light emitting efficiency and the light using efficiency are increased and the integral performance of the white light emitting diode is improved.
Description
Technical field
The present invention relates to a kind of white light emitting diode epitaxial material, particularly a kind of white light GaN based Single chip light-emitting diode chip for backlight unit epitaxial material that does not need the fluorescent material conversion.
Background technology
White light emitting diode has plurality of advantages such as luminous efficiency height, the response time is short, the life-span is long as white light source, and these advantages have determined it will replace the trend of existing white light source.Generally the preparation method of white light LBD of approval has following three kinds at present: (1) is that make separately or single chip integrated ruddiness by three, green glow and blue light-emitting diode are simultaneously luminous, obtain white light thereby mix, (2) excite the outer redgreenblue mixed fluorescent powder that wraps up by ultraviolet or purple-light LED as illuminating source, the luminous mixing of three-color phosphor obtains white light, (3) by blue light-emitting diode as illuminating source, partly excite the gold-tinted fluorescent material of outer parcel to send gold-tinted, the yellow light mix that interior light emitting diodes institute's blue light-emitting and excitated fluorescent powder obtain obtains white light.
Wherein, manufacture method (1) is owing to the reason of cost and technical elements also is not applied; Method (2) is to make the fairly simple a kind of white light LED production method that also is expected most, but owing to do not find the potting resin of suitable anti-ultraviolet irradiation so far and lack red fluorescence powder efficiently, is not widely used; Method (3) is business-like at present a kind of white light LED production method, owing to lacking suitable red light fluorescent powder the luminescent quality of white light emitting diode is restricted equally, the white-light spectrum that is obtained by the two color light mixing is more single, and light emission color temperature is higher and color rendering index is on the low side.Method (3) is though commercialization and color rendering index and colour temperature have had effective improvement through for many years exploration, but its essence is this key problem through the fluorescent material conversion, just fluorescent material converts blue light in the process of gold-tinted, certainly will cause Stokes shift to cause the not high problem of luminous efficiency, still restrict further developing of this method.
Applied for the GaN white light emitting diode patent (number of patent application: 200610065103.1) of no fluorescent material conversion preceding the applicant, this patent is by adopting the stress modulation template of InGaN stress relaxation layer as mqw light emitting layer, make in the InGaN quantum well of extension thereon because the effect of stress template, strengthen the segregation effect of In and form the InGaN quantum dot of different I n component or different size, the mixing that these quantum dots send different wavelengths of light (wide range is luminous) realizes white-light emitting.But also there is the not high enough defective of white-light emitting efficient in the GaN base white light emitting diode of this no fluorescent material conversion, and the requirement that does not also reach practicability.
Summary of the invention
The objective of the invention is to: for the luminous efficiency of the Single chip white light emitting diode that improves existing no fluorescent material conversion, thereby provide a kind of and replace existing individual layer InGaN relaxed layer by the InGaN/GaN superlattice structure that adopts relaxation, the GaN based Single chip white light emitting diode epitaxial material, this material can be realized stress modulation, again can be by the function of the distinctive reduction dislocation of superlattice structure, play the dislocation in the obvious reduction relaxed layer, for the quantum well radiation central core of follow-up extension provides high-quality stress modulation template, thereby can improve the luminous efficiency of Single chip white light effectively.
The object of the present invention is achieved like this:
A kind of GaN based Single chip white light emitting diode epitaxial material provided by the invention, the initial growth layer, intrinsic GaN resilient coating, n type GaN layer, stress relaxation layer, InGaN volume minor structure luminescent layer, p type AlGaN interlayer and the p type GaN layer that comprise a substrate and on described substrate, grow successively; It is characterized in that: described stress relaxation layer is made up of the InGaN and the GaN superlattice of alternating growth, and wherein the thickness of superlattice stress modulation layer is 10nm-3 μ m, and the cycle of described InGaN/GaN layer alternating growth is 6-500 cycle; In component in the described InGaN layer is (detailed structure is seen Fig. 1) in 1%～35% scope, and the stress of superlattice is relaxation.
A kind of GaN based Single chip white light emitting diode epitaxial material provided by the invention, the initial growth layer, intrinsic GaN resilient coating, n type GaN layer, stress relaxation layer, InGaN volume minor structure luminescent layer, p type AlGaN interlayer and the p type GaN layer that comprise a substrate and on described substrate, grow successively; It is characterized in that: described stress relaxation layer is a superlattice stress modulation layer, and this superlattice stress modulation layer is by alternating growth In
xGa
1-xN layer and In
yGa
1-yThe N layer is formed, and wherein the thickness of superlattice stress modulation layer is 10nm-3 μ m, described In
xGa
1-xN/In
yGa
1-yThe cycle of N alternating growth layer is 6-500; In component x and the y of described InGaN satisfy x＞y, and x regulates and control in 1%～35% scope, and y regulates and control in 0～35% scope, and the stress of superlattice is relaxation.
In above-mentioned technical scheme, the InGaN in the described InGaN/GaN superlattice relaxed layer is In
xAl
yGa
1-x-yN;
GaN in the described InGaN/GaN superlattice relaxed layer is In
yAl
zGa
1-y-zN or Al
xGa
1-xN.
In above-mentioned technical scheme, described substrate is sapphire substrate, SiC substrate or silicon chip;
Described initial growth layer is AlN layer or GaN layer; Its thickness 20nm-2 μ m;
Described intrinsic GaN layer is the transition zone of extension on foreign substrate that GaN layer, AlN layer, AlGaN layer, InGaN layer, InAlN layer, InAlGaN layer or this several alloy combination form; Its thickness 50nm-2 μ m;
Described n type GaN layer is the contact layer of the n type ohmic contact of GaN layer, AlN layer, AlGaN layer, InGaN layer, InAlN layer, InAlGaN layer or these several alloy combination; Its thickness 50nm-3 μ m;
Described InGaN volume minor structure luminescent layer is by barrier layer In
yGa
1-yN and quantum well layer In
xGa
1-xThe active layer of the light-emitting diode that N forms, y＜x wherein, 0.1＜x＜0.3,0＜y＜0.15; Described quantum well layer In
xGa
1-xN form with soakage layer by quantum dot or by fractional condensation mutually and the quantum structure of two different components that produce form; Described barrier layer In
yGa
1-yN and quantum well layer In
xGa
1-xThe doping content of N layer is 0～1 * 10
18/ cm
3, the thickness 5-15nm of barrier layer, quantum well layer thickness 2-5nm; The periodicity of quantum well is 1～20;
Described p type AlGaN interlayer is Al
mGa
1-mThe N interlayer, wherein m is 0～0.2; Its thickness 5nm-1 μ m;
The contact layer of the preparation p type ohmic contact that described p type GaN layer is GaN layer, InAlN layer, AlGaN layer, InAlGaN layer or these several alloy combination.Its thickness 10nm-1 μ m.
The growing method of the GaN based Single chip white light emitting diode epitaxial material that the present invention proposes can be to adopt Organometallic Chemistry vapour phase epitaxy method, also can adopt molecular beam epitaxial method to carry out extension on sapphire, Si or SiC substrate and realize.
The GaN base white light emitting diode of this no fluorescent material conversion has been avoided the limitation of aforementioned three kinds of white light technology, and technology is simple, and with the technical compatibility of conventional blue light-emitting diode, cost is low, helps to advance semiconductor lighting order morning to come into domestic. applications.
The present invention is on the basis of the GaN of no fluorescent material conversion base white light emitting diode patented technology, replace existing individual layer InGaN relaxed layer by the InGaN/GaN superlattice structure that adopts relaxation, can realize simultaneously modulating stress, can effectively reduce dislocation in the material again, thereby effectively improve the luminous efficiency of Single chip white light.
Compared with prior art, use the advantage of the prepared light-emitting diode of GaN based Single chip white light emitting diode epitaxial structural material of the present invention to be:
1. by adopting InGaN/GaN superlattice stress modulation layer, in luminescent layer, produce the light of the InGaN luminescence center emission different wave length of different I n component owing to strengthen the phase fractional condensation of In, the method that these multi-wave length illuminatings are mixed into white light has realized the purpose of single-chip outgoing white light, simplify conventional manufacture craft and the flow process that contains the white light emitting diode of fluorescent material, reduced the cost of white light emitting diode.Simultaneously, owing to there is not the fluorescent material conversion,, improved the light utilization ratio of light-emitting diode so there is not the Stokes shift effect.
2. by adopting InGaN/GaN superlattice stress modulation layer to replace the InGaN layer of relaxation, can reach the effect of individual layer InGaN stress modulation on the one hand, can realize the crooked or merging of dislocation by the alternating action at superlattice multilayer interface again, thereby reach the purpose of effective filtration dislocation.Thereby help reducing the dislocation in the luminescent layer, improve the luminous efficiency of luminescent layer, make the performance of Single chip white light emitting device further improve and raising.
3. the present invention is not increasing under the prerequisite that epitaxial structure material preparation and device technology prepare complexity, fundamentally reduced the white light emitting diode cost, light outgoing efficient and utilization ratio have been increased, overcome the shortcoming that conventional fluorescent material conversion obtains white light emitting diode, improved the overall performance of white light emitting diode.
In sum, core content of the present invention is the GaN white light emitting diode patent (number of patent application: on the basis 200610065103.1) in no fluorescent material conversion, by adopting the InGaN/GaN superlattice to replace the InGaN relaxed layer, realize filtering the double action of dislocation and stress modulation simultaneously, and realization is to the further raising of Single chip white light emitting performance, Fig. 2 has provided the light-emitting characteristic curve of the Single chip white light emitting diode of employing relaxation InGaN/GaN superlattice (embodiment 1) and individual layer InGaN relaxed layer, adopts the white-light emitting intensity of relaxation superlattice stress modulation layer stronger as can be seen.
Description of drawings
Fig. 1 contains the schematic diagram of material structure of the Single chip white light emitting diode of InGaN/GaN superlattice stress modulation layer.
Fig. 2 adopts the luminous spectrum of the Single chip white light emitting diode of InGaN/GaN superlattice stress modulation layer and individual layer InGaN relaxed layer respectively.
Embodiment
Specify the structure of GaN based Single chip white light emitting diode epitaxial material of the present invention below by the growing method of material.The structure of the GaN based Single chip white light emitting diode epitaxial material among the embodiment, all the other the epitaxial structure layers except that the stress modulation layer of relaxation adopt the structure of disclosed GaN base blue LED.
Embodiment 1
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention, its structure is as follows:
Adopt sapphire as substrate 1, use metal organic-matter chemical gas deposition technology (MOCVD) on sapphire, grow the successively thick GaN initial growth layer 2 of 20nm, n type GaN layer 4 (doping content 5 * 10 that 200nm intrinsic GaN layer 3,1 μ m is thick
18Cm
-3), the 10nm in 20 cycles thick (refer to In
0.1Ga
0.9The thickness of N individual layer) In
0.1Ga
0.9The GaN superlattice stress modulation layer 5 that N/10nm is thick, InGaN volume minor structure luminescent layer 6 are (by barrier layer In
0.05Ga
0.95N and quantum well layer In
0.15Ga
0.85The Multiple Quantum Well in 5 cycles that N forms, wherein barrier layer In
0.05Ga
0.95The thickness of N is 10nm, quantum well layer In
0.15Ga
0.85The thickness of N is 3nm), the thick p type of 100nm Al
0.2Ga
0.8N interlayer 7, the p type GaN layer 8 (doping content 3 * 10 that 100nm is thick
17Cm
-3), obtain GaN based Single chip white light emitting diode epitaxial structural material (shown in Figure 1).The electroluminescence spectrum that this structure process is carried out after the device technology is seen Fig. 2.
Embodiment 2
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention: adopt the thick SiC of 0.4mm as substrate 1, use metal organic-matter chemical gas deposition technology (MOCVD) grow the successively thick n type GaN layer 4 of thick intrinsic GaN layer 3, the 1 μ m of thick AlN initial growth layer 2, the 0.3 μ m of 100nm, the 5nmIn in thick 10 cycles of 150nm thereon
0.15Ga
0.85The In that N/10nm is thick
0.05Ga
0.95N superlattice stress modulation layer 5, InGaN volume minor structure luminescent layer 6 are (by barrier layer GaN and quantum well layer In
0.15Ga
0.85The Multiple Quantum Well in 4 cycles that N forms, wherein the thickness of barrier layer GaN is 12nm, quantum well layer In
0.15Ga
0.85The thickness of N is 3nm, and the doping content of described barrier layer GaN is 1 * 10
18/ cm
3, the doping content of quantum well layer InxGa1-xN layer is 0), the thick p type of 50nm Al
0.2Ga
0.8N interlayer 7, the P type GaN layer 8 that 500nm is thick, the white light GaN LED epitaxial material that is not needed fluorescent material to change, as shown in Figure 1.
Embodiment 3
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention: adopt the thick silicon chip of 0.3mm as substrate 1, use molecular beam epitaxy technique (MBE) thick intrinsic GaN layer 3, the 0.5 μ m of the thick AlN initial growth of 200nm layer 2, the 0.5 μ m 1nm In in thick 4,15 cycle of n type GaN layer that grows successively thereon
0.3Ga
0.7N/8nm In
0.05Al
0.02Ga
0.93N superlattice stress modulation layer 5, InGaN volume minor structure luminescent layer 6 are (by barrier layer GaN and quantum well layer In
0.15Ga
0.85The Multiple Quantum Well in 4 cycles that N forms, wherein the thickness of barrier layer GaN is 10nm, quantum well layer In
0.15Ga
0.85The thickness of N is 3nm, and the doping content of described barrier layer GaN is 1 * 10
17/ cm
3, quantum well layer In
xGa
1-xThe doping content of N layer is 2 * 10
17/ cm
3), the thick p type of 100nm Al
0.2Ga
0.8N interlayer 7, the P type GaN layer 8 that 300nm is thick obtain GaN based Single chip white light emitting diode epitaxial structural material, as shown in Figure 1.
Embodiment 4
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention: adopt the analog structure of changing to some extent except superlattice stress modulation layer 5 among the embodiment 2.The structure of the superlattice stress modulation layer 5 after the change is: the 10nm In in 6 cycles
0.2Ga
0.8N/10nm GaN superlattice stress modulation layer.The white light emitting diode structure that contains this stress modulation layer do not need can obtain the white light GaN LED epitaxial material of fluorescent material conversion as shown in Figure 1.
Embodiment 5
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention: adopt the analog structure of changing to some extent except superlattice stress modulation layer 5 among the embodiment 3.The structure of the superlattice stress modulation layer 5 after the change is: the 10nm In in 150 cycles
0.01Ga
0.99N/1nmGaN superlattice stress modulation layer.The white light emitting diode structure that contains this stress modulation layer do not need can obtain the white light GaN LED epitaxial material of fluorescent material conversion as shown in Figure 1.
Embodiment 6
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention: adopt the analog structure of changing to some extent except superlattice stress modulation layer 5 among the embodiment 1.The structure of the superlattice stress modulation layer 5 after the change is: the 5nm In in 40 cycles
0.08Al
0.02Ga
0.9N/2nmAl
0.01Ga
0.98N superlattice stress modulation layer.The white light emitting diode structure that contains this stress modulation layer do not need can obtain the white light GaN LED epitaxial material of fluorescent material conversion as shown in Figure 1.
Embodiment 7
With reference to figure 1, make a kind of GaN based Single chip white light emitting diode epitaxial material of the present invention: adopt the analog structure of changing to some extent except superlattice stress modulation layer 5 among the embodiment 1.The structure of the superlattice stress modulation layer 5 after the change is: the In that the 2nm in 400 cycles is thick
0.02Ga
0.98N/3nmGaN superlattice stress modulation layer.The white light emitting diode structure that contains this stress modulation layer do not need can obtain the white light GaN LED epitaxial material of fluorescent material conversion as shown in Figure 1.
The composition of the superlattice stress modulation layer in the GaN based Single chip white light emitting diode epitaxial material structure that the foregoing description proposes, promptly the two layers of material of superlattice can be In
xGa
1-xN and In
yGa
1-yThe N superlattice are formed, and wherein the component x of In and y satisfy x＞y, and x regulates and control in 1%～35% scope, and y regulates and control in 0～35% scope; The thickness of described superlattice stress modulation layer is 10nm-3 μ m, and the cycle of described InGaN/GaN layer alternating growth is 6-500 cycle; The stress of superlattice is relaxation.
Superlattice stress modulation layer in the GaN based Single chip white light emitting diode epitaxial material structure that the foregoing description proposes is characterised in that, forms the two layers of material InGaN and the GaN of superlattice, can expand in accordance with the principle of the invention, can use In as InGaN
xAl
yGa
1-x-yN replaces, and GaN can use In
yAl
zGa
1-y-zN or Al
xGa
1-xN replaces.Its purpose is to form the stress modulation layer of relaxation, strengthens the In segregation effect of the InGaN luminescent layer of extension on it.
The GaN based Single chip white light emitting diode epitaxial structural material of the foregoing description, promptly on sapphire, Si or SiC substrate with conventional semiconductor device deposition technique grow successively superlattice stress modulation layer, InGaN volume minor structure luminescent layer, p type AlGaN interlayer and the p type GaN layer of initial growth layer, intrinsic GaN resilient coating, n type GaN layer, InGaN/GaN relaxation.This method keeps the preparation technology of existing conventional blue light-emitting diode structural material, only the structural design of GaN based luminescent material is improved, by between N type GaN layer and mqw light emitting layer, increase the InGaN/GaN superlattice stress modulation layer of relaxation, strengthen the segregation effect of In, and form the InGaN quantum dot of different component.The mixing of the light of these quantum dot emission different wave lengths realizes white-light emitting.The present invention adopts InGaN/GaN superlattice stress modulation layer to substitute existing individual layer InGaN stress modulation layer, not only has the effect of stress modulation simultaneously concurrently, can also play the effect of filtering dislocation simultaneously, can strengthen the performance of Single chip white light device.The present invention is not increasing under the prerequisite that epitaxial structure material preparation and device technology prepare complexity, fundamentally reduced the white light emitting diode cost, light outgoing efficient and utilization ratio have been increased, overcome the shortcoming that conventional fluorescent material conversion obtains white light emitting diode, improved the overall performance of white light emitting diode.
Claims (4)
1, a kind of GaN based Single chip white light emitting diode epitaxial material, the initial growth layer, intrinsic GaN resilient coating, n type GaN layer, stress relaxation layer, InGaN volume minor structure luminescent layer, p type AlGaN interlayer and the p type GaN layer that comprise a substrate and on described substrate, grow successively; It is characterized in that: described stress relaxation layer is an InGaN/GaN superlattice stress modulation layer, and this superlattice stress modulation layer is made up of the InGaN layer and the GaN layer of alternating growth, and wherein the growth cycle of the InGaN layer of alternating growth and GaN layer is 6-500; In component in the described InGaN layer is in 1%～35% scope; The thickness of described InGaN/GaN superlattice stress modulation layer is 10nm-3 μ m.
2, a kind of GaN based Single chip white light emitting diode epitaxial material, the initial growth layer, intrinsic GaN resilient coating, n type GaN layer, stress relaxation layer, InGaN volume minor structure luminescent layer, p type AlGaN interlayer and the p type GaN layer that comprise a substrate and on described substrate, grow successively; It is characterized in that: described stress relaxation layer is a superlattice stress modulation layer, and this superlattice stress modulation layer is by alternating growth In
xGa
1-xN layer and In
yGa
1-yThe N layer is formed, and wherein the thickness of superlattice stress modulation layer is 10nm-3 μ m, described In
xGa
1-xN/In
yGa
1-yThe cycle of N alternating growth layer is 6-500; In component x and the y of described InGaN satisfy x＞y, and x regulates and control in 1%～35% scope, and y regulates and control in 0～35% scope, and the stress of superlattice is relaxation.
3, by claim 1 or 2 described GaN based Single chip white light emitting diode epitaxial materials, it is characterized in that: the InGaN in the described InGaN/GaN superlattice relaxed layer is In
xAl
yGa
1-x-yN;
GaN in the described InGaN/GaN superlattice relaxed layer is In
yAl
zGa
1-y-zN or Al
xGa
1-xN.
4, by claim 1 or 2 described GaN based Single chip white light emitting diode epitaxial materials, it is characterized in that: described substrate is sapphire substrate, SiC substrate or silicon chip;
Described initial growth layer is AlN layer or GaN layer; Its thickness 20nm-2 μ m;
Described intrinsic GaN layer is the transition zone of extension on foreign substrate that GaN layer, AlN layer, AlGaN layer, InGaN layer, InAlN layer, InAlGaN layer or this several alloy combination form; Its thickness 50nm-2 μ m;
Described n type GaN layer is the contact layer of the n type ohmic contact of GaN layer, AlN layer, AlGaN layer, InGaN layer, InAlN layer, InAlGaN layer or these several alloy combination; Its thickness 50nm-3 μ m;
Described InGaN volume minor structure luminescent layer is by barrier layer In
yGa
1-yN and quantum well layer In
xGa
1-xThe active layer of the light-emitting diode that N forms, y＜x wherein, 0.1＜x＜0.3,0＜y＜0.15; Described quantum well layer In
xGa
1-xN form with soakage layer by quantum dot or by fractional condensation mutually and the quantum structure of two different components that produce form; Described barrier layer In
yGa
1-yN and quantum well layer In
xGa
1-xThe doping content of N layer is 0～1 * 10
18/ cm
3, the thickness 5-15nm of barrier layer, quantum well layer thickness 2-5nm; The periodicity of quantum well is 1～20;
Described p type AlGaN interlayer is Al
mGa
1-mThe N interlayer, wherein m is 0～0.2; Its thickness 5nm-1 μ m;
Described p type GaN layer is the contact layer of the p type ohmic contact of GaN layer, InAlN layer, AlGaN layer, InAlGaN layer or these several alloy combination.Its thickness 10nm-1 μ m.
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