CN103972345A - Nitride semiconductor structure and semiconductor light-emitting component - Google Patents
Nitride semiconductor structure and semiconductor light-emitting component Download PDFInfo
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- CN103972345A CN103972345A CN201310029711.7A CN201310029711A CN103972345A CN 103972345 A CN103972345 A CN 103972345A CN 201310029711 A CN201310029711 A CN 201310029711A CN 103972345 A CN103972345 A CN 103972345A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 19
- 229910000831 Steel Inorganic materials 0.000 claims description 14
- 239000010959 steel Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 11
- 230000006835 compression Effects 0.000 abstract description 8
- 238000007906 compression Methods 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 11
- 230000005611 electricity Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 238000010030 laminating Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure is mainly characterized in that a stress control layer is arranged between a light-emitting layer and a p-type carrier barrier layer, the p-type carrier barrier layer is made of materials expressed by AlxGa1-xN, the x is larger than zero and smaller than one, the stress control layer is made of materials expressed by AlxInyGa1-x-yN, the x is larger than zero and smaller than one, the y is larger than zero and smaller than one, a sum of the x and the y is larger than zero and smaller than one, the light-emitting layer is of a multi-quantum-well structure formed by a plurality of alternated and stacked well layers and barrier layers, and one well layer is arranged between every two barrier layers. The semiconductor light-emitting component at least comprises the nitride semiconductor structure, an n-type electrode and a p-type electrode, and the n-type electrode and the p-type electrode supply power energy in a matched mode. In this way, the crystalline quality degradation problem, caused by lattice mismatching, of the p-type carrier barrier layer and the light-emitting layer can be solved through the stress control layer; meanwhile, compression stress caused by material differences and borne by the well layers can be reduced.
Description
Technical field
The present invention has about a kind of nitride semiconductor structure and semiconductor light-emitting elements, refers in particular to one and dispose Al between luminescent layer and p-type carrier barrier layer
xin
yga
1-x-ynitride semiconductor structure and the semiconductor light-emitting elements of the stress control layer that N material forms, belong to technical field of semiconductors.
Background technology
In recent years, the application surface of light-emitting diode is increasingly extensive, has become critical elements indispensable in daily life; And light-emitting diode is expected to replace lighting apparatus now, become following new solid-state lighting elements from generation to generation, high energy-conservation, the high efficiency of this development of prisoner and more high-power light-emitting diode will be future trend; Nitride LED is owing to having the advantages such as component size is little, high and life-span is long without mercury pollution, luminous efficiency, become one of the most emerging photoelectric semiconductor material, and the emission wavelength of the 3rd main group nitride has almost been contained the scope of visible ray, more become the light LED material that has potentiality.
Generally speaking, iii-nitride light emitting devices is that a resilient coating is first formed on substrate, then on resilient coating sequentially building crystal to grow N-shaped semiconductor layer, luminescent layer and p-type semiconductor layer; Then, utilize micro-shadow and etch process to remove the p-type semiconductor layer of part, the luminescent layer of part, until expose the N-shaped semiconductor layer of part; Then, respectively at forming N-shaped electrode and p-type electrode on the expose portion of N-shaped semiconductor layer and p-type semiconductor layer, and produce light-emitting diode; Wherein, luminescent layer is multiple quantum trap structure (MQW), and the quantum well layer (well) that the mode that multiple quantum trap structure comprises repeating is arranged alternately and quantum barrier layer (barrier), because quantum well layer has the energy gap that relative quantum barrier layer is lower, make each the quantum well layer in above-mentioned multiple quantum trap structure can on quantum mechanics, limit electronics and electric hole, cause electronics and electric hole to inject from N-shaped semiconductor layer and p-type semiconductor layer respectively, and combination in quantum well layer, and launch photon.
But, the many prisoner's elements of above-mentioned light-emitting diode prisoner (for example: electric current congested (current crowding), dislocation defects (dislocation) etc.), and then affect its luminous efficiency, in theory, the luminous efficiency of light-emitting diode depends on that external quantum efficiency and the internal quantum of itself (internal quantum efficiency) and light take out efficiency (light-extraction efficiency), so-called internal quantum is determined by material behavior and quality, taking out efficiency as for light is the radiation ratio that is issued to surrounding air from element internal, light takes out efficiency and depend on the loss occurring in the time that element internal is left in radiation, causing one of main former prisoner of above-mentioned loss is because the semi-conducting material of the superficial layer of forming element has high index of refraction (refraction coefficient), cause light produce total reflection (totalreflection) and cannot launch at this material surface, if and light takes out improved efficiency, the external quantum efficiency of semiconductor light-emitting elements also promotes thereupon, prisoner this, take out efficiency for promoting internal quantum and light, developed in recent years many technology, for example use steel tin-oxide (Indium Tin Oxide, ITO) when the graphically sapphire substrate of (PSS) of current delivery layer, employing flip chip structure (flip-chip), utilization, and use current barrier layer (current block layer, CBL) etc., wherein, in promoting the technology of internal quantum, also there is dealer between multiple quantum trap structure and p-type semiconductor layer, to dispose the p-type carrier barrier layer (p-AlGaN) of the high energy gap of one deck (band gap), more carrier is limited in quantum well layer, to improve the laminating probability in electronics electricity hole, increase luminous efficiency, and then reach effect that light-emitting diode luminance promotes.
And utilize p-AlGaN though carrier can be limited in quantum well layer effectively as the method for p-type carrier barrier layer, to promote the internal quantum of light-emitting diode; But, because multiple quantum trap structure is formed with the quantum well layer of InGaN and the quantum barrier layer of GaN, and in essence, the p-type carrier barrier layer of p-AlGaN and the quantum barrier layer of GaN have very high lattice misfit, make InGaN quantum well layer prisoner lattice misfit can seriously be compressed the effect of stress, and this compression stress has changed the band structure of each quantum well layer, thereby electronics and electric hole in quantum well layer are spatially separated from each other, cause the luminous efficiency of light-emitting diode to reduce; Moreover, above-mentioned compression stress also can deteriorated adjacent GaN quantum barrier layer and InGaN quantum well layer between interfacial characteristics, thereby at interface loss carrier, also affect light-emitting diode luminous efficiency.
In view of above-mentioned existing nitride semiconductor LED still has the disappearance of many places on reality is implemented, therefore, develop a kind of novel nitride semiconductor structure and semiconductor light-emitting elements and be still one of this area problem demanding prompt solution.
Summary of the invention
For solving the problems of the technologies described above, main purpose of the present invention is for a kind of nitride semiconductor structure is provided, and it disposes Al between luminescent layer and p-type carrier barrier layer
xin
yga
1-x-ythe stress control layer that N material forms, cause the deteriorated problem of crystal mass to improve the lattice mismatch that p-type carrier barrier layer and luminescent layer produced, increase brilliant yield of heap of stone, and the impact of further lowering quantum well layer and be compressed stress, effectively electronics electricity hole is confined in each quantum well layer, promote thus internal quantum, make semiconductor light-emitting elements can obtain good luminous efficiency.
Another object of the present invention is for providing a kind of semiconductor light-emitting elements, and it at least includes above-mentioned nitride semiconductor structure.
For reaching above-mentioned purpose, the invention provides a kind of nitride semiconductor structure, it mainly disposes a stress control layer between luminescent layer and a p-type carrier barrier layer, described luminescent layer has multiple quantum trap structure, and described multiple quantum trap structure comprises multiple well layer and barrier layers that replace each other storehouse, and well layer described in having between every two-layer described barrier layer, described p-type carrier barrier layer is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1, and described stress control layer is Al
xin
yga
1-x-ythe material that N represents forms, and wherein, x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described stress control layer is less than 10 doped with concentration
19cm
-3p-type admixture.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described stress control layer is less than 10 doped with concentration
19cm
-3n-shaped admixture.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, the steel content of described stress control layer is equal to or less than the steel content of the well layer of described multiple quantum trap structure.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, the thickness of described stress control layer is 2-15nm.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, the thickness of described stress control layer is less than the thickness of the well layer of described multiple quantum trap structure.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described barrier layer is 10 doped with concentration
16-10
18cm
-3n-shaped admixture.
Nitride semiconductor structure of the present invention mainly disposes a stress control layer between luminescent layer and a p-type carrier barrier layer, luminescent layer has multiple quantum trap structure (MQW), and multiple quantum trap structure comprises multiple well layer and barrier layers that replace each other storehouse, and between every two-layer barrier layer, there is a well layer, wherein, barrier layer can be 10 doped with concentration
16-10
18cm
-3n-shaped admixture, make barrier layer can reduce carrier capture-effect, more increase carrier confinement effect, and p-type carrier barrier layer is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1, and stress control layer is by Al
xin
yga
1-x-ythe material that N represents forms, and wherein, x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1; In addition, the further content of steel in proof stress key-course, make the steel content of stress control layer be equal to or less than the steel content of the well layer of multiple quantum trap structure, and then formation energy gap is greater than the stress control layer of well layer, carrier can be confined in the well layer of multiple quantum trap structure, to increase the laminating probability in electronics electricity hole, promote internal quantum.
Moreover above-mentioned stress control layer is less than 10 doped with concentration respectively
19cm
-3p-type admixture, and concentration is less than 10
19cm
-3n-shaped admixture, and the thickness of stress control layer is 2-15nm, preferably, the thickness of stress control layer is less than the thickness of the well layer of multiple quantum trap structure, by slim stress control layer, more can avoid the phenomenon of cumulative stress and poor misarrangement position (misfit dislocation).
According to the specific embodiment of the present invention, preferably, above-mentioned nitride semiconductor structure can further comprise a substrate, a p-type semiconductor layer and a N-shaped semiconductor layer; Wherein, on described p-type carrier barrier layer, dispose described p-type semiconductor layer, and dispose described N-shaped semiconductor layer between described luminescent layer and described substrate.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described p-type semiconductor layer doped has concentration to be greater than 5 × 10
19cm
-3p-type admixture, and its thickness is less than 30nm.
In one embodiment of this invention, can on p-type carrier barrier layer, dispose a p-type semiconductor layer, and between luminescent layer and substrate, dispose a N-shaped semiconductor layer, wherein p-type semiconductor layer can be greater than 5 × 10 doped with concentration
19cm
-3p-type admixture, and its thickness is less than 30nm.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, can between luminescent layer and N-shaped semiconductor layer, dispose N-shaped carrier barrier layer, N-shaped carrier barrier layer is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, the multiple quantum trap structure of described luminescent layer can form well layer and barrier layer by InGaN and GaN respectively, there is the lower energy gap of relative GaN barrier layer by the well layer of InGaN, electronics and electric hole are more easily confined in well layer, to increase the laminating probability in electronics electricity hole.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, can between luminescent layer and N-shaped carrier barrier layer, configure a superlattice layer, cushion thus the difference of luminescent layer and N-shaped carrier barrier layer, reduce its poor row's density.
The present invention also provides a kind of semiconductor light-emitting elements, and it at least includes:
One substrate;
One N-shaped semiconductor layer, it is disposed on described substrate;
One luminescent layer, it is disposed on described N-shaped semiconductor layer, and described luminescent layer has multiple quantum trap structure, and described multiple quantum trap structure comprises multiple alternately well layer and the barrier layers of storehouse each other, and well layer described in having between every two-layer described barrier layer;
One stress control layer, it is disposed on described luminescent layer, and described stress control layer is Al
xin
yga
1-x-ythe material that N represents forms, and wherein x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1;
One p-type carrier barrier layer, it is disposed on described stress control layer, and described p-type carrier barrier layer is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1;
One p-type semiconductor layer, it is disposed on described p-type carrier barrier layer;
One N-shaped electrode, it is disposed on described N-shaped semiconductor layer with ohmic contact; And
One p-type electrode, it is disposed on described p-type semiconductor layer with ohmic contact.
Semiconductor light-emitting elements of the present invention at least comprises nitride semiconductor structure described above, and two-phase provides N-shaped electrode and the p-type electrode of electric energy ordinatedly; Thus, Al
xin
yga
1-x-yn stress control layer not only can improve p-type carrier barrier layer and the deteriorated problem of luminescent layer prisoner crystal mass that lattice mismatch causes; Meanwhile, more can lower the suffered compression stress of InGaN quantum well layer prisoner's materials variances, electronics and electric hole in quantum well layer are spatially more assembled, effectively electronics electricity hole is confined to, in quantum well layer, promote thus internal quantum.
In addition, because the minimizing of compression stress also can strengthen the interfacial characteristics between adjacent barrier layer and well layer, improve the carrier loss of interface, increase thus internal quantum, make semiconductor light-emitting elements can obtain good luminous efficiency.
Brief description of the drawings
The generalized section of the nitride semiconductor structure that Fig. 1 provides for a preferred embodiment of the present invention.
The generalized section of the semiconductor light-emitting elements that Fig. 2 is the nitride semiconductor structure made that provides according to a preferred embodiment of the invention.
Primary clustering symbol description:
1 substrate 2 resilient coatings
3n type semiconductor layer 31n type electrode
4n type carrier barrier layer 5 luminescent layers
51 well layer 52 barrier layer
6 stress control layer 7p type carrier barrier layers
8p type semiconductor layer 81p type electrode
9 superlattice layers
Embodiment
Advantage in object of the present invention and structural design function thereof, will be explained according to the following drawings and preferred embodiment, the present invention is had to more deep and concrete understanding.
First, in the description of following examples, be to be understood that, when point out one deck (or film) or a structure be configured in another substrate, another layer (or film) or another structure " on " or when D score, it can be positioned at " directly " other substrate, layer (or film) or another structure, also or between the two there is more than one intermediate layer and configure in " indirectly " mode, can be with reference to the accompanying drawings of every one deck position.
Refer to shown in Fig. 1, the generalized section of its nitride semiconductor structure providing for a preferred embodiment of the present invention, it mainly disposes a stress control layer 6 between luminescent layer 5 and a p-type carrier barrier layer 7, luminescent layer 5 has multiple quantum trap structure (MQW), and multiple quantum trap structure comprises multiple well layer 51 and barrier layers 52 that replace each other storehouse, and 52 of every two-layer barrier layers have a well layer 51, p-type carrier barrier layer 7 is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1, and stress control layer 6 is by Al
xin
yga
1-x-ythe material that N represents forms, and wherein, x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1.
In addition,, in above-mentioned nitride semiconductor structure, barrier layer 52 is 10 doped with concentration
16-10
18cm
-3n-shaped admixture, and can on p-type carrier barrier layer 7, dispose a p-type semiconductor layer 8, wherein p-type semiconductor layer 8 is greater than 5 × 10 doped with concentration
19cm
-3p-type admixture, and its thickness is less than 30nm, and disposes a N-shaped semiconductor layer 3 between luminescent layer 5 and substrate 1; Moreover, in the present embodiment, between luminescent layer 5 and N-shaped semiconductor layer 3, also may be configured with N-shaped carrier barrier layer 4, N-shaped carrier barrier layer 4 is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1; In addition, configuration one superlattice layer (super lattice structure) 9 between luminescent layer 5 and N-shaped carrier barrier layer 4, to cushion the crystal lattice difference of luminescent layer 5 and N-shaped carrier barrier layer 4, reduces its poor row's density.
Moreover in the present embodiment, stress control layer 6 is less than 10 doped with concentration respectively
19cm
-3p-type admixture (being preferably magnesium), and concentration is less than 10
19cm
-3n-shaped admixture (being preferably silicon), above-mentioned p-type admixture is as an acceptor, can increase effective electric hole concentration, and N-shaped admixture is as a donor, donor is to improve the crystallization property of gallium nitride based semiconductor layer, produces good photoelectric characteristic by while Doped n-type admixture and p-type admixture, and the thickness of above-mentioned stress control layer 6 is 2-15nm, preferably, the thickness of stress control layer 6 is the thickness that is less than the well layer 51 of multiple quantum trap structure.
When the nitride semiconductor structure of above-described embodiment is implemented to use in reality, the material of N-shaped semiconductor layer 3 can be for example the gallium nitride series material of silicon doping, and the material of p-type semiconductor layer 8 can be for example the gallium nitride series material of magnesium doping, well layer 51 and barrier layer 52 that the multiple quantum trap structure of luminescent layer 5 preferably can be formed by InGaN and GaN respectively; And due to Al
xin
yga
1-x-ythe stress control layer 6 that N material forms is between p-type carrier barrier layer 7 and luminescent layer 5, by the content of steel in proof stress key-course, make the steel content of stress control layer 6 be equal to or less than the steel content of the well layer 51 of multiple quantum trap structure, and then formation energy gap is greater than the stress control layer 6 of well layer, carrier can be confined in the well layer 51 of multiple quantum trap structure, to increase the laminating probability in electronics electricity hole, and then lifting internal quantum, reach effect of effective enhancing semiconductor light-emitting elements luminous efficiency; In addition Al of the present invention,
xin
yga
1-x-yn stress control layer 6 not only can be used as the resilient coating 2 between p-type carrier barrier layer 7 and luminescent layer 5, and low compared with GaN owing to generally containing the band gap of InGaN of steel, and the band gap of the AlGaN that contains aluminium wants high compared with GaN; Prisoner this, not only can improve p-type carrier barrier layer 7 by stress control layer 6 of the present invention and cause the deteriorated problem of crystal mass with the lattice mismatch that luminescent layer 5 produces; Meanwhile, more can lower quantum well layer 51 and be compressed the impact of stress, electronics and electric hole in quantum well layer 51 are spatially more assembled, effectively electronics electricity hole is confined to, in each quantum well layer 51, promote thus internal quantum; In addition, the minimizing of compression stress also strengthens the interfacial characteristics between adjacent GaN quantum barrier layer 52 and InGaN quantum well layer 51, improves the carrier loss of interface, also can increase internal quantum.
Refer to shown in Fig. 2, above-mentioned nitride semiconductor structure can be applicable in semiconductor light-emitting elements, the generalized section of the semiconductor light-emitting elements that Fig. 2 is the nitride semiconductor structure made that provides according to a preferred embodiment of the invention, described semiconductor light-emitting elements at least includes:
One substrate 1;
One N-shaped semiconductor layer 3, it is disposed on substrate 1; Wherein, the material of N-shaped semiconductor layer 3 can be for example the gallium nitride series material of silicon doping;
One luminescent layer 5, it is disposed on N-shaped semiconductor layer 3, and luminescent layer 5 has multiple quantum trap structure, and multiple quantum trap structure comprises multiple alternately well layer 51 and the barrier layers 52 of storehouse each other, and 52 of every two-layer barrier layers have a well layer 51; Wherein, well layer 51 can be formed by InGaN and GaN respectively with barrier layer 52, makes thus electronics and electric hole more easily be confined in well layer 51, to increase the laminating probability in electronics electricity hole, promotes internal quantum;
One stress control layer 6, it is disposed on luminescent layer 5, and stress control layer 6 is by Al
xin
yga
1-x-ythe material that N represents forms, and wherein x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1; In the present embodiment, stress control layer 6 is less than 10 doped with concentration respectively
19cm
-3p-type admixture (being preferably magnesium), and concentration is less than 10
19cm
-3n-shaped admixture (being preferably silicon), and its thickness is 2-15nm, and its thickness is less than the thickness of well layer 51, and because the aluminium ion of p-type carrier barrier layer 7 can diffuse in stress control layer 6, cause the steel content of stress control layer 6 to be equal to or less than the steel content of the well layer 51 of multiple quantum trap structure, and then formation energy gap is greater than the stress control layer 6 of well layer, carrier can be confined in the well layer 51 of multiple quantum trap structure, to increase the laminating probability in electronics electricity hole, promote internal quantum;
One p-type carrier barrier layer 7, it is disposed on stress control layer 6, and p-type carrier barrier layer 7 is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1;
One p-type semiconductor layer 8, it is disposed on p-type carrier barrier layer 7; Wherein, the gallium nitride series material that the material of p-type semiconductor layer 8 can for example adulterate for magnesium;
One N-shaped electrode 31, it is disposed on N-shaped semiconductor layer 3 with ohmic contact; And
One p-type electrode 81, it is disposed on p-type semiconductor layer 8 with ohmic contact; Wherein, N-shaped electrode 31 matches electric energy is provided with p-type electrode 81, and can following material but to be not limited only to these materials made: titanium, aluminium, gold, chromium, nickel, platinum and alloy thereof etc.; Its manufacture method is that persons skilled in the art are known, and is not emphasis of the present invention, therefore, no longer in the present invention, is repeated.
In addition, between luminescent layer 5 and N-shaped semiconductor layer 3, may be configured with N-shaped carrier barrier layer 4, and N-shaped carrier barrier layer 4 is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1, so that carrier can be confined in quantum well layer 51, to improve the laminating probability in electronics electricity hole, increase luminous efficiency, and then reach effect of semiconductor light-emitting elements luminance raising; Moreover, between substrate 1 and N-shaped semiconductor layer 3, disposing a resilient coating 2, resilient coating 2 is by chemical formula Al
xga
1-xthe material that N represents forms, and wherein 0 < x < 1, in order to solve of heap of stone brilliant poor row's phenomenon that between prisoner's substrate 1 and N-shaped semiconductor layer 3, prisoner's crystal lattice difference produces.
Thus, from the implementation of the above-mentioned nitride semiconductor structure with stress control layer 6, semiconductor light-emitting elements of the present invention passes through Al
xin
yga
1-x-yn stress control layer 6 not only can improve p-type carrier barrier layer 7 problem deteriorated with luminescent layer 5 prisoner's crystal mass that lattice mismatch causes, to increase brilliant yield of heap of stone; Meanwhile, more can lower the suffered compression stress of InGaN quantum well layer 51 prisoner's materials variances, electronics and electric hole in quantum well layer 51 are spatially more assembled, effectively electronics electricity hole is confined to, in quantum well layer 51, promote thus internal quantum; In addition, the minimizing of prisoner's compression stress also can strengthen the interfacial characteristics between adjacent barrier layer 52 and well layer 51, improves the carrier loss of interface, increases thus internal quantum, makes semiconductor light-emitting elements can obtain good luminous efficiency.
In sum, the nitride semiconductor structure of tool stress control layer of the present invention and semiconductor light-emitting elements, can pass through above-mentioned disclosed embodiment really, reaches desired use effect.
Above-mentioned disclosed accompanying drawing and explanation, be only the preferred embodiments of the present invention, not for limiting protection scope of the present invention; Persons skilled in the art, according to feature of the present invention, other equivalence of doing changes or modifies, and all should be considered as not departing from protection scope of the present invention.
Claims (10)
1. a nitride semiconductor structure, it mainly disposes a stress control layer between luminescent layer and a p-type carrier barrier layer, described luminescent layer has multiple quantum trap structure, and described multiple quantum trap structure comprises multiple well layer and barrier layers that replace each other storehouse, and well layer described in having between every two-layer described barrier layer, described p-type carrier barrier layer is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1, and described stress control layer is Al
xin
yga
1-x-ythe material that N represents forms, and wherein, x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1.
2. nitride semiconductor structure as claimed in claim 1, wherein, described stress control layer is less than 10 doped with concentration
19cm
-3p-type admixture.
3. nitride semiconductor structure as claimed in claim 1, wherein, described stress control layer is less than 10 doped with concentration
19cm
-3n-shaped admixture.
4. nitride semiconductor structure as claimed in claim 1, wherein, the steel content of described stress control layer is equal to or less than the steel content of the well layer of described multiple quantum trap structure.
5. nitride semiconductor structure as claimed in claim 1, wherein, the thickness of described stress control layer is 2-15nm.
6. nitride semiconductor structure as claimed in claim 1, wherein, the thickness of described stress control layer is less than the thickness of the well layer of described multiple quantum trap structure.
7. nitride semiconductor structure as claimed in claim 1, wherein, described barrier layer is 10 doped with concentration
16-10
18cm
-3n-shaped admixture.
8. nitride semiconductor structure as claimed in claim 1, it further comprises a substrate, a p-type semiconductor layer and a N-shaped semiconductor layer; Wherein, on described p-type carrier barrier layer, dispose described p-type semiconductor layer, and dispose described N-shaped semiconductor layer between described luminescent layer and described substrate.
9. nitride semiconductor structure as claimed in claim 8, wherein, described p-type semiconductor layer doped has concentration to be greater than 5 × 10
19cm
-3p-type admixture, and its thickness is less than 30nm.
10. a semiconductor light-emitting elements, it at least includes:
One substrate;
One N-shaped semiconductor layer, it is disposed on described substrate;
One luminescent layer, it is disposed on described N-shaped semiconductor layer, and described luminescent layer has multiple quantum trap structure, and described multiple quantum trap structure comprises multiple alternately well layer and the barrier layers of storehouse each other, and well layer described in having between every two-layer described barrier layer;
One stress control layer, it is disposed on described luminescent layer, and described stress control layer is Al
xin
yga
1-x-ythe material that N represents forms, and wherein x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1;
One p-type carrier barrier layer, it is disposed on described stress control layer, and described p-type carrier barrier layer is by chemical formula Al
xga
1-xthe material that N represents forms, wherein 0 < x < 1;
One p-type semiconductor layer, it is disposed on described p-type carrier barrier layer;
One N-shaped electrode, it is disposed on described N-shaped semiconductor layer with ohmic contact; And
One p-type electrode, it is disposed on described p-type semiconductor layer with ohmic contact.
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| CN201310029711.7A CN103972345B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
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| CN201810344250.5A CN108305922B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
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| CN106057997A (en) * | 2016-06-28 | 2016-10-26 | 华灿光电(苏州）有限公司 | Epitaxial wafer for green-yellow light emitting diode and manufacturing method thereof |
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| CN109545918B (en) * | 2018-09-27 | 2020-11-27 | 华灿光电（浙江）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof |
| US11552217B2 (en) * | 2018-11-12 | 2023-01-10 | Epistar Corporation | Semiconductor device |
| CN109950375B (en) * | 2019-01-31 | 2021-04-02 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
| TWI759602B (en) * | 2019-05-24 | 2022-04-01 | 晶元光電股份有限公司 | Semiconductor device |
| CN114964569A (en) * | 2022-05-19 | 2022-08-30 | 电子科技大学 | Quantum well bias and stress sensor |
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|---|---|
| CN108550669B (en) | 2020-10-09 |
| CN108550669A (en) | 2018-09-18 |
| CN108305922B (en) | 2020-04-28 |
| CN108565319A (en) | 2018-09-21 |
| CN108305922A (en) | 2018-07-20 |
| CN103972345B (en) | 2018-05-15 |
| CN108565319B (en) | 2020-10-02 |
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