CN103972341A - Nitride semiconductor structure and semiconductor light-emitting component - Google Patents
Nitride semiconductor structure and semiconductor light-emitting component Download PDFInfo
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- CN103972341A CN103972341A CN201310029679.2A CN201310029679A CN103972341A CN 103972341 A CN103972341 A CN 103972341A CN 201310029679 A CN201310029679 A CN 201310029679A CN 103972341 A CN103972341 A CN 103972341A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 187
- 230000004888 barrier function Effects 0.000 claims description 32
- 230000005611 electricity Effects 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure comprises a first-type doped semiconductor layer and a second-type doped semiconductor layer, a light-emitting layer is arranged between the first-type doped semiconductor layer and the second-type doped semiconductor layer, second-type dopants with the concentration larger than 5*1019 cm<-3> are doped into the second-type doped semiconductor layer, and the thickness of the second-type doped semiconductor layer is smaller than 30 nm. The semiconductor light-emitting component is characterized in that at least the nitride semiconductor structure, a first-type electrode and a second-type electrode are arranged on a substrate, and the first-type electrode and the second-type electrode supply power energy in a matched mode. In this way, semiconductor light emitting diodes can be good in light-emitting efficiency.
Description
Technical field
The present invention has about a kind of nitride semiconductor structure and semiconductor light-emitting elements, refers in particular to a kind of Second-Type doping semiconductor layer that has high-dopant concentration and (is greater than 5 × 10
19cm
-3), and its thickness is less than nitride semiconductor structure and the semiconductor light-emitting elements of 30nm, belongs to technical field of semiconductors.
Background technology
Generally speaking, iii-nitride light emitting devices is that a resilient coating is first formed on substrate, then on resilient coating sequentially building crystal to grow N-shaped gallium nitride (n-GaN) layer, luminescent layer and p-type gallium nitride (p-GaN) layer; Then, utilize micro-shadow and etch process to remove the p-type gallium nitride layer of part, the luminescent layer of part, until expose the N-shaped gallium nitride layer of part; Then, respectively at forming N-shaped electrode and p-type electrode on the expose portion of N-shaped gallium nitride layer and p-type gallium nitride layer, and produce light-emitting diode; Wherein, luminescent layer has multiple quantum trap structure (MQW), and the quantum well layer (well) that the mode that multiple quantum trap structure comprises repeating is arranged alternately and quantum barrier layer (barrier), prisoner has the energy gap that relative quantum barrier layer is lower for quantum well layer, make each the quantum well layer in above-mentioned multiple quantum trap structure can on quantum mechanics, limit electronics and electric hole, cause electronics and electric hole to inject from N-shaped gallium nitride layer and p-type gallium nitride layer respectively, and combination in quantum well layer, and transmitting bright dipping particle.
As everyone knows, the brightness of light-emitting diode depends on that internal quantum and light take out efficiency, and wherein internal quantum is the ratio that electronics is combined with electric hole; But, because the refractive index of air and gallium nitride material is respectively 1 and 2.4 left and right, according to total reflection physical law, the critical angle that the light-emitting diode of gallium nitride can allow light ejaculation surface enter air approximately only has 24 degree left and right, cause light to take out efficiency and be approximately 4.34%, make the light prisoner that lumination of light emitting diode layer produces be nitrided the total reflection of gallium and air interface, and be confined to light-emitting diode inside, cause light taking-up efficiency obviously on the low side; Therefore, many methods that increase light taking-up efficiency of researching and proposing: for example the first is done surface treatment in p-type gallium nitride layer, to destroy total reflection condition, and then improve light and take out efficiency, and wherein surface treatment can be for example surface coarsening, the pattern that changes light-emitting diode etc.; It two is that N-shaped gallium nitride layer is separated with substrate, then on N-shaped gallium nitride layer, forms coarse structure, finally recycles colloid gallium nitride semiconductor layers is sticked back on substrate, improves thus light and takes out efficiency; But said method one can only deal with the exposed p-type gallium nitride semiconductor layers in the top of light-emitting diode chip for backlight unit, make light take out efficiency and be still the restriction that can be subject to a certain extent; And method two process is quite numerous and diverse, and also must consider the problem of colloid poor heat radiation, cause its whole lighting efficiency of light-emitting diode made from above-mentioned two methods effectively to promote.
In addition, because the doping content of p-type gallium nitride layer cannot improve effectively, cause its resistance value bigger than normal, make in the time that electric current conducts to GaN semiconductor layer by metal electrode, electric current cannot reach good current spread in p-type gallium nitride layer, can be limited in the below of metal electrode (N-shaped electrode and p-type electrode) when electric current cannot dispersedly also just cause luminous region, also cause light-emitting diode luminous efficiency greatly to reduce.
In view of above-mentioned existing nitride semiconductor luminescent element still has the shortcoming of many places on reality is implemented, prisoner this, develop a kind of novel nitride semiconductor structure and semiconductor light-emitting elements and be still one of this area problem demanding prompt solution.
Summary of the invention
For addressing the above problem, main purpose of the present invention is for a kind of nitride semiconductor structure is provided, and its Second-Type admixture that has high-dopant concentration in Second-Type doping semiconductor layer (is greater than 5 × 10
19cm
-3), and its thickness is less than 30nm, takes out efficiency to promote light.
Another object of the present invention is for providing a kind of semiconductor light-emitting elements, and it at least includes above-mentioned nitride semiconductor structure, makes semiconductor light-emitting elements obtain good luminous efficiency.
For reaching above-mentioned purpose, the invention provides a kind of nitride semiconductor structure, it consists predominantly of one first type doping semiconductor layer and a Second-Type doping semiconductor layer, dispose a luminescent layer in described the first type doping semiconductor layer and described Second-Type doped semiconductor interlayer, wherein, described Second-Type doping semiconductor layer is greater than 5 × 10 doped with concentration
19cm
-3second-Type admixture (preferably, this Second-Type admixture is magnesium), and the thickness of described Second-Type doping semiconductor layer is less than 30nm.Wherein, preferably, described Second-Type doping semiconductor layer is to form under the relatively high pressure that is greater than 300torr.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, can dispose Yi electricity Dong in described luminescent layer and described Second-Type doped semiconductor interlayer layer is provided, described electric hole provides layer for nitrogenize aluminum steel gallium Al
xin
yga
1-x-yn, wherein 0 < x < 1,0 < y < 1,0 < x+y < 1, and described electric hole provides layer to be greater than 10 doped with concentration
18cm
-3second-Type admixture.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, it can be 10 doped with concentration that described electric hole provides layer
17-10
20cm
-3the 4th major element, provide thus more electric hole to enter luminescent layer, and then increase electronics electricity hole in conjunction with probability.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described luminescent layer has multiple quantum trap structure, and described electric hole provides the energy gap of layer to be greater than the energy gap of the well layer of described multiple quantum trap structure, make described electric hole provide the electric hole of layer can enter in the well layer of described multiple quantum trap structure, be combined probability with electric hole to increase electronics, further improving luminous efficiency.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described luminescent layer has multiple quantum trap structure, and described multiple quantum trap structure comprises multiple well layer and barrier layers that replace each other storehouse, and well layer described in having between every two-layer described barrier layer, described barrier layer is Al
xin
yga
1-x-yn, wherein x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1, and described well layer is In
zga
1-zn, wherein 0 < z < 1.More preferably, wherein, described well layer has the thickness of 3.5nm-7nm.Particularly preferably, described barrier layer is 10 doped with concentration
16-10
18cm
-3the first type admixture.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described electric hole provides layer and described Second-Type doped semiconductor interlayer to dispose a Second-Type carrier barrier layer, and described Second-Type carrier barrier layer is Al
xga
1-xn, wherein 0 < x < 1; Preferably, in above-mentioned nitride semiconductor structure, described luminescent layer and described the first type doped semiconductor interlayer dispose one first type carrier barrier layer, and described the first type carrier barrier layer is Al
xga
1-xn, wherein 0 < x < 1; Thus, utilize the band gap of the AlGaN that contains aluminium to want high characteristic compared with GaN, carrier can be confined in multiple quantum trap structure, improve the laminating probability in electronics electricity hole, and then reach effect that luminous efficiency promotes.
The present invention also provides a kind of semiconductor light-emitting elements, and it at least includes:
One substrate;
One first type doping semiconductor layer, it is disposed on described substrate;
One luminescent layer, it is disposed on described the first type doping semiconductor layer;
One Second-Type doping semiconductor layer, it is disposed on described luminescent layer, and described Second-Type doping semiconductor layer is greater than 5 × 10 doped with concentration
19cm
-3second-Type admixture, and its thickness is less than 30nm;
One first type electrode, it is disposed on described the first type doping semiconductor layer with ohmic contact; And
One Second-Type electrode, it is disposed on described Second-Type doping semiconductor layer with ohmic contact.
Semiconductor light-emitting elements of the present invention at least comprises above-mentioned nitride semiconductor structure on a substrate, and two-phase provides the first type electrode and the Second-Type electrode of electric energy ordinatedly; Thus, due to the thinner thickness of Second-Type doping semiconductor layer, make the close together between Second-Type electrode and luminescent layer surface, the coupling ability that causes the photon that produced by luminescent layer and surface plasma prisoner to resonate to produce is just stronger, so can improving luminous efficiency; Moreover, more there is the Second-Type admixture of relatively traditional p-type gallium nitride layer higher concentration due to Second-Type doping semiconductor layer, cause its resistance value relatively low, make in the time that electric current conducts to the first type electrode by Second-Type electrode, reach evenly effect of diffusion of electric current in Second-Type doping semiconductor layer, also make light-emitting diode can obtain better luminous efficiency.
Brief description of the drawings
The generalized section of the nitride semiconductor structure that Fig. 1 provides for a preferred embodiment of the present invention.
The generalized section of the semiconductor light-emitting elements that Fig. 2 is the nitride semiconductor structure made that provides according to a preferred embodiment of the invention.
Primary clustering symbol description:
1 substrate 2 resilient coatings
3 first type doping semiconductor layer 31 first type electrodes
4 first type carrier barrier layers
5 luminescent layers
51 well layer 52 barrier layer
6 Second-Type carrier barrier layers
7 Second-Type doping semiconductor layer 71 Second-Type electrodes
8 electric holes provide layer
Embodiment
Advantage in object of the present invention and structural design function thereof, will be explained according to the following drawings and preferred embodiment, the present invention is had to more deep and concrete understanding.
First, in the description of following examples, be to be understood that, when point out one deck (or film) or a structure be configured in another substrate, another layer (or film) or another structure " on " or when D score, it can be positioned at " directly " other substrate, layer (or film) or another structure, also or between the two there is more than one intermediate layer and configure in " indirectly " mode, can be with reference to the accompanying drawings of the position at every one deck place.
Refer to shown in Fig. 1, the generalized section of its nitride semiconductor structure providing for a preferred embodiment of the present invention, it includes one first type doping semiconductor layer 3 and Second-Type doping semiconductor layer 7, in between the first type doping semiconductor layer 3 and Second-Type doping semiconductor layer 7, dispose a luminescent layer 5, wherein Second-Type doping semiconductor layer 7 is greater than 5 × 10 doped with concentration
19cm
-3second-Type admixture, and its thickness is less than 30nm, wherein Second-Type admixture can be for example magnesium or zinc, is preferably magnesium.
In addition, the material of above-mentioned the first type doping semiconductor layer 3 can be for example silicon or Ge-doped gallium nitride series material (being N-shaped doped gallium nitride based semiconductor layer), and Second-Type doping semiconductor layer 7 can be greater than 5 × 10 doped with concentration
19cm
-3the gallium nitride series material (being p-type doped gallium nitride based semiconductor layer) of magnesium, do not limit at this; And the method that the first type doping semiconductor layer 3, Second-Type doping semiconductor layer 7 form can be for example to carry out Metalorganic chemical vapor deposition method (metalorganic chemical vapor deposition; MOCVD), and Second-Type doping semiconductor layer 7 must form in relatively high pressure (being greater than 300torr) is lower.
Moreover, between luminescent layer 5 and Second-Type doping semiconductor layer 7, disposing Yi electricity Dong layer 8 is provided, electric hole provides layer 8 for nitrogenize aluminum steel gallium Al
xin
yga
1-x-yn, wherein 0 < x < 1,0 < y < 1,0 < x+y < 1, and electric hole provides layer 8 to be greater than 10 doped with concentration
18cm
-3second-Type admixture (being for example magnesium or zinc); In addition, layer is provided 8 is 10 doped with concentration in electric hole
17-10
20cm
-3the 4th major element (being preferably carbon), utilize carbon (4A family) to replace the nitrogen-atoms of pentavalent, many positively charged electricity hole thus, make electric hole provide layer 8 can there is high electric hole concentration, provide thus more electric hole to enter luminescent layer 5, and then increase the probability of electronics electricity hole combination; Moreover, luminescent layer 5 is multiple quantum trap structure, and electric hole provides the energy gap (bandgap energy) of layer 8 to be greater than the energy gap of the well layer 51 of multiple quantum trap structure, make electric hole provide the electric hole of layer 8 can enter in the well layer 51 of multiple quantum trap structure, be combined probability with electric hole to increase electronics, further improving luminous efficiency.
In addition, join greatly produced effect of stress in order to reduce in multiple quantum trap structure lattice between well layer and barrier layer, the barrier layer 52 of above-mentioned multiple quantum trap structure is replaceable is the Al of quaternary material
xin
yga
1-x-yn, wherein x and y system meets the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1, and well layer 51 replaceable be the In of ternary material
zga
1-zn, wherein 0 < z < 1, utilize the barrier layer of nitrogenize aluminum steel gallium of quaternary material and the well layer of ternary nitrated steel gallium to there is the characteristic of same steel element, capable of regulating four-tuple becomes condition so that the composition of Lattice Matching to be provided, make the lattice constant of barrier layer and well layer comparatively close, this well layer 51 of prisoner can have the thickness of 3.5nm-7nm, and barrier layer 52 can be further 10 doped with concentration
16-10
18cm
-3the first type admixture (being for example silicon or germanium), make barrier layer can reduce carrier capture-effect, more increase carrier confinement effect.
In addition, above-mentioned nitride semiconductor structure provides between layer 8 and Second-Type doping semiconductor layer 7 and disposes a Second-Type carrier barrier layer 6 in electric hole, and Second-Type carrier barrier layer 6 is Al
xga
1-xn, dispose one first type carrier barrier layer 4, and the first type carrier barrier layer 4 is Al between wherein 0 < x < 1, and luminescent layer 5 and the first type doping semiconductor layer 3
xga
1-xn, wherein 0 < x < 1; Thus, utilize the band gap of the AlGaN that contains aluminium to want high characteristic compared with GaN, carrier can be confined in multiple quantum trap structure, improve the laminating probability in electronics electricity hole, and then reach the effect that increases luminous efficiency.
Shown in Fig. 2, above-mentioned nitride semiconductor structure can be applicable in semiconductor light-emitting elements, the generalized section of the semiconductor light-emitting elements of the nitride semiconductor structure made that Fig. 2 provides for above preferred embodiment according to the present invention, described semiconductor light-emitting elements at least includes:
One substrate 1; Wherein the material of substrate 1 can be for example sapphire (sapphire), silicon, SiC, ZnO or GaN substrate etc.;
One first type doping semiconductor layer 3, it is disposed on substrate 1; Wherein, the material of the first type doping semiconductor layer 3 can be for example silicon or Ge-doped gallium nitride series material;
One luminescent layer 5, it is disposed on the first type doping semiconductor layer 3;
One Second-Type doping semiconductor layer 7, it is disposed on luminescent layer 5, and Second-Type doping semiconductor layer 7 is greater than 5 × 10 doped with concentration
19cm
-3second-Type admixture, and its thickness is less than 30nm;
One first type electrode 31, it is disposed on the first type doping semiconductor layer 3 with ohmic contact; And
One Second-Type electrode 71, it is disposed on Second-Type doping semiconductor layer 7 with ohmic contact; Wherein, the first type electrode 31 matches electric energy is provided with Second-Type electrode 71, and can following material but to be not limited only to these materials made: titanium, aluminium, gold, chromium, nickel, platinum and alloy thereof etc.; Its manufacture method is known in those skilled in the art, and is not emphasis of the present invention, therefore, no longer in the present invention, is repeated.
Moreover configurable one by Al between substrate 1 and the first type doping semiconductor layer 3
xga
1-xthe resilient coating 2 that N forms, wherein 0 < x < 1, using the unmatched problem of lattice constant being produced on heterogeneous substrate 1 of growing up as improvement the first type doping semiconductor layer 3, and the material of resilient coating 2 can be for example also GaN, InGaN, SiC, ZnO etc.
When the semiconductor light-emitting elements of above-described embodiment is implemented to use in reality, because Second-Type doping semiconductor layer 7 (is greater than 5 × 10 doped with the magnesium of high concentration
19cm
-3), and it is under the relatively high pressure that is greater than 300torr, to form the thickness that is less than 30nm, more traditional p-type gallium nitride layer is thin, light takes out efficiency and obviously promotes, and there is preferably luminous efficiency, its rational inference is nearer because of the distance between Second-Type electrode 71 and luminescent layer 5 surfaces, and the resonate coupling ability that produces of the photon being produced by luminescent layer 5 and surface plasma prisoner is just stronger, luminous efficiency thereby lifting; Wherein, surface plasma resonant phenomenon is the phenomenon of the free electron collective motion on Second-Type electrode 71 surfaces; Moreover, the magnesium due to Second-Type doping semiconductor layer 7 with relatively traditional p-type gallium nitride layer higher concentration adulterates, cause its resistance value relatively low, make in the time that electric current conducts to Second-Type doping semiconductor layer 7 by Second-Type electrode 71, reach evenly effect of diffusion of electric current, also make light-emitting diode can obtain better luminous efficiency.
In sum, nitride semiconductor structure of the present invention and semiconductor light-emitting elements, can pass through above-mentioned disclosed embodiment really, reaches desired use effect.
Above-mentioned disclosed accompanying drawing and explanation, be only the preferred embodiments of the present invention, not for limiting protection scope of the present invention; Persons skilled in the art, according to feature of the present invention, other equivalence of doing changes or modifies, and all should be considered as not departing from protection scope of the present invention.
Claims (10)
1. a nitride semiconductor structure, it includes one first type doping semiconductor layer and a Second-Type doping semiconductor layer, dispose a luminescent layer in described the first type doping semiconductor layer and described Second-Type doped semiconductor interlayer, wherein, described Second-Type doping semiconductor layer is greater than 5 × 10 doped with concentration
19cm
-3second-Type admixture, and its thickness is less than 30nm.
2. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer and described Second-Type doped semiconductor interlayer dispose Yi electricity Dong provides layer, and described electric hole provides layer for nitrogenize aluminum steel gallium Al
xin
yga
1-x-yn, wherein 0 < x < 1,0 < y < 1,0 < x+y < 1, and described electric hole provides layer to be greater than 10 doped with concentration
18cm
-3second-Type admixture.
3. nitride semiconductor structure as claimed in claim 2, wherein, it is 10 doped with concentration that described electric hole provides layer
17-10
20cm
-3the 4th major element.
4. nitride semiconductor structure as claimed in claim 2, wherein, described luminescent layer has multiple quantum trap structure, and described electric hole provides the energy gap of layer to be greater than the energy gap of the well layer of described multiple quantum trap structure.
5. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer has multiple quantum trap structure, and described multiple quantum trap structure comprises multiple well layer and barrier layers that replace each other storehouse, and well layer described in having between every two-layer described barrier layer, described barrier layer is Al
xin
yga
1-x-yn, wherein x and y meet the numerical value of 0 < x < 1,0 < y < 1,0 < x+y < 1, and described well layer is In
zga
1-zn, wherein 0 < z < 1.
6. nitride semiconductor structure as claimed in claim 5, wherein, described well layer has the thickness of 3.5nm-7nm.
7. nitride semiconductor structure as claimed in claim 5, wherein, described barrier layer is 10 doped with concentration
16-10
18cm
-3the first type admixture.
8. nitride semiconductor structure as claimed in claim 2, wherein, described electric hole provides layer and described Second-Type doped semiconductor interlayer to dispose a Second-Type carrier barrier layer, and described Second-Type carrier barrier layer is Al
xga
1-xn, wherein 0 < x < 1.
9. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer and described the first type doped semiconductor interlayer dispose one first type carrier barrier layer, and described the first type carrier barrier layer is Al
xga
1-xn, wherein 0 < x < 1.
10. a semiconductor light-emitting elements, it at least includes:
One substrate;
One first type doping semiconductor layer, it is disposed on described substrate;
One luminescent layer, it is disposed on described the first type doping semiconductor layer;
One Second-Type doping semiconductor layer, it is disposed on described luminescent layer, and described Second-Type doping semiconductor layer is greater than 5 × 10 doped with concentration
19cm
-3second-Type admixture, and its thickness is less than 30nm;
One first type electrode, it is disposed on described the first type doping semiconductor layer with ohmic contact; And
One Second-Type electrode, it is disposed on described Second-Type doping semiconductor layer with ohmic contact.
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| CN107104174A (en) | 2017-08-29 |
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