CN103972340A - Nitride semiconductor structure and semiconductor light-emitting component - Google Patents
Nitride semiconductor structure and semiconductor light-emitting component Download PDFInfo
- Publication number
- CN103972340A CN103972340A CN201310029644.9A CN201310029644A CN103972340A CN 103972340 A CN103972340 A CN 103972340A CN 201310029644 A CN201310029644 A CN 201310029644A CN 103972340 A CN103972340 A CN 103972340A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- electric hole
- type semiconductor
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 195
- 230000004888 barrier function Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 19
- 239000011229 interlayer Substances 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 230000002779 inactivation Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 15
- 230000004913 activation Effects 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910019080 Mg-H Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer, a light-emitting layer is arranged between the N-type semiconductor layer and the P-type semiconductor layer, an electron hole providing layer is arranged between the light-emitting layer and the P-type semiconductor layer and is made of InxGa1-xN, the x is larger than zero and smaller than one, and a fourth main group element with the concentration ranging from 1017 cm<-3> to 1020 cm<-3> is doped in the electron hole providing layer. The semiconductor light-emitting component is characterized in that the nitride semiconductor structure, an N-type electrode and a P-type electrode are arranged on a substrate, and the N-type electrode and the P-type electrode supply power energy in a matched mode. The fourth main group element is doped, the electron hole concentration can be improved, inactivation caused by Mg and H bonding can be reduced, the Mg can be activated to have the effective effect of a receptor, and the light-emitting efficiency can be further improved.
Description
Technical field
The present invention, relevant for a kind of nitride semiconductor structure and semiconductor light-emitting elements, refers in particular to a kind of nitride semiconductor structure and semiconductor light-emitting elements that electric hole provides layer that have, and belongs to technical field of semiconductors.
Background technology
In recent years, the application surface of light-emitting diode is increasingly extensive, has become critical elements indispensable in daily life; And light-emitting diode is expected to replace lighting apparatus now, become following new solid-state lighting elements from generation to generation, therefore develop high energy-saving high efficiency and more high-power light-emitting diode will be future trend; Nitride LED due to have component size little, without mercury pollution, the advantage such as luminous efficiency is high and the life-span is long, become one of the most emerging photoelectric semiconductor material, and the emission wavelength of the 3rd main group nitride has almost been contained the scope of visible ray, more become the light LED material that has potentiality.
The 3rd main group nitride has a wide band gap as materials such as indium nitride (InN), gallium nitride (GaN) and aluminium nitride (AlN), in optoelectronic semiconductor component, play the part of considerable role, its InN that can be 0.7eV from direct band gap with scope, GaN to 3.4eV, the AlN of 6.2eV even, the optical wavelength range of sending is from red, green, blue, to deep UV; And the 3rd main group nitride-based semiconductor needs PN to engage on as light-emitting component, particularly, must form n type nitride semiconductor layer and P type nitride semiconductor layer, and be generally to adulterate if the N-type admixtures such as Si or Sn are to form n type nitride semiconductor layer, and forming on P type nitride semiconductor layer, be generally to use Mg as P type admixture; Yet, Mg easily and H bond, form magnesium-hydrogen compound (Mg-H Complexes), cause above-mentioned P type admixture cannot bring into play the character of acceptor, cause the electric hole concentration providing to decline significantly, therefore the usefulness that light-emitting component cannot be brought into normal play, also have the P type nitride semiconductor layer of Low ESR (low-resistance) and be not easy to form by traditional technology.
For example, for example, when forming the semiconductor layer (gallium nitride) being formed by P type nitride, conventionally can use NH
3gas is used as the source of nitrogen, in brilliant process of heap of stone (such as vapour deposition etc.), high temperature can make NH
3decompose and produce nitrogen-atoms and hydrogen atom, hydrogen atom can for example, form bond with the P type admixture (Mg) that is used as acceptor in above-mentioned semiconductor layer, makes above-mentioned P type admixture go greatly effect, causes doping content effectively to promote; Moreover, again because the activation energy of magnesium in gallium nitride is very large, make the efficiency extremely low (less than 10%) of electric hole activation; So the electric hole concentration of P type gallium nitride is difficult to improve; Therefore, in order to obtain high electric hole concentration, must reduce Mg and H combination, so that P type gallium nitride can present enough low impedance, and then reach better luminous efficiency.
In view of above-mentioned existing nitride semiconductor luminescent element still has lacking greatly of many places on reality is implemented, therefore, develop a kind of novel nitride semiconductor luminescent element and be still one of this area problem demanding prompt solution.
Summary of the invention
For solving the problems of the technologies described above, main purpose of the present invention is for providing a kind of nitride semiconductor structure, it provides layer doping the 4th major element to improve electric hole concentration by electric hole, and reduce the not activation phenomenon causing because of Mg-H bond, make Mg activation and there is the useful effect of acceptor, and then make electric hole provide layer to there is higher electric hole concentration, provide thus more electric hole to enter luminescent layer, increase the situation of electronics electricity hole combination, to obtain good luminous efficiency.
Another object of the present invention is for providing a kind of semiconductor light-emitting elements, and it at least includes above-mentioned nitride semiconductor structure.
For reaching above-mentioned purpose, the invention provides a kind of nitride semiconductor structure, it comprises a n type semiconductor layer and a p type semiconductor layer, in described n type semiconductor layer and described P type semiconductor interlayer, dispose a luminescent layer, described luminescent layer and described P type semiconductor interlayer dispose Yi electricity Dong provides layer, and described electric hole provides layer for InGaN In
xga
1-xn, it is 10 doped with concentration that wherein 0 < x < 1, and described electric hole provides layer
17-10
20cm
-3the 4th major element.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described the 4th major element is carbon.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described electric hole provides layer to be greater than 10 doped with concentration
18cm
-3p type admixture.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described P type admixture is magnesium.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described luminescent layer has multiple quantum trap structure, and described electric hole provides the energy gap of layer to be greater than the energy gap of the well layer of described multiple quantum trap structure.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, it is 1-100nm that described electric hole provides the thickness of layer.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described electric hole provides layer for InGaN In
xga
1-xn, wherein x is 0 < x≤0.1.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described electric hole provides layer and described P type semiconductor interlayer to dispose a P type carrier barrier layer, and described P type carrier barrier layer is made by the material having higher than the energy gap of described luminescent layer.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described luminescent layer and described N type semiconductor interlayer dispose a N-type carrier barrier layer, and described N-type carrier barrier layer is made by the material having higher than the energy gap of described luminescent layer.
According to the specific embodiment of the present invention, preferably, in above-mentioned nitride semiconductor structure, described luminescent layer and described N type semiconductor interlayer dispose a N-type carrier barrier layer, and described N-type carrier barrier layer is made by the material having higher than the energy gap of described luminescent layer.
In the present invention, this nitride semiconductor structure comprises a n type semiconductor layer and a p type semiconductor layer, in described n type semiconductor layer and described P type semiconductor interlayer, dispose a luminescent layer, described luminescent layer and described P type semiconductor interlayer dispose Yi electricity Dong provides layer, and described electric hole provides layer for InGaN In
xga
1-xn, 0 < x < 1 wherein, preferably, the number range of x is 0 < x≤0.1; In addition, described electric hole provide layer doped with concentration, be 10
17-10
20cm
-3the 4th major element, if the 4th major element doping content is less than 10
17cm
-3, cannot there is the effect that electric hole provides, if the 4th major element doping content is greater than 10
20cm
-3, can produce the problem that resistance uprises, preferred doping content is 8 * 10
17-5 * 10
18cm
-3, wherein, described the 4th major element can be for example carbon.
In addition, above-mentioned electric hole provides layer to be greater than 10 doped with concentration
18cm
-3p type admixture, and electric hole provide layer thickness be 1-100nm; Wherein P type admixture can be for example magnesium.
In one embodiment of this invention, multiple quantum trap structure can replace storehouse by the well layer of InGaN and the barrier layer of gallium nitride and formed; And it is the energy gap that is greater than the well layer of multiple quantum trap structure that electric hole provides the energy gap of layer, and electric hole can be entered in the well layer of multiple quantum trap structure, to increase electronics, be combined probability with electric hole, further improving luminous efficiency.
In addition, in one embodiment of this invention, electricity hole provides layer and P type semiconductor interlayer to may be configured with a P type carrier barrier layer (such as being P type aluminium gallium nitride alloy etc.), and P type carrier barrier layer is made by the material with the energy gap that is greater than luminescent layer, for instance, when luminescent layer is multiple quantum trap structure, the energy gap of P type carrier barrier layer is greater than the energy gap of the barrier layer of multiple quantum trap structure, to avoid electronics to escape, enter in p type semiconductor layer, there is the electronics of slowing down rate travel, and increase the effect that is stranded in the luminescent layer time; And also may be configured with a N-type carrier barrier layer (such as being N-type aluminium gallium nitride alloy etc.) in luminescent layer and N type semiconductor interlayer, and N-type carrier barrier layer is made by the material with the energy gap that is greater than luminescent layer, in like manner, N-type carrier barrier layer is made by the material having higher than the energy gap of luminescent layer, to avoid electric hole to escape, enter in n type semiconductor layer, to improve the probability of electronics electricity hole combination.
The present invention also provides a kind of semiconductor light-emitting elements, and it at least includes:
One substrate;
One n type semiconductor layer, it is disposed on described substrate;
One luminescent layer, it is disposed on described n type semiconductor layer;
One electric hole provides layer, and it is disposed on described luminescent layer, and described electric hole provides layer for InGaN In
xga
1-xn, it is 10 doped with concentration that wherein 0 < x < 1, and described electric hole provides layer
17-10
20cm
-3the 4th major element;
One p-type semiconductor layer, it is disposed at described electric hole and provides on layer;
One N-type electrode, it is disposed on described n type semiconductor layer with ohmic contact; And
One P type electrode, it is disposed on described p type semiconductor layer with ohmic contact.
Semiconductor light-emitting elements of the present invention comprises above-mentioned nitride semiconductor structure on a substrate, and two-phase provides N-type electrode and the P type electrode of electric energy ordinatedly; Thus, electricity hole provides the 4th major element of layer to improve electric hole concentration, and reduce the not activation phenomenon causing because of Mg-H bond, make Mg activation and there is the useful effect of acceptor, and then make electric hole provide layer to there is higher electric hole concentration, provide thus more electric hole to enter luminescent layer, to increase the situation of electronics electricity hole combination, so that semiconductor light-emitting elements can present enough low impedance, and then obtain good luminous efficiency.
Moreover, for solving the of heap of stone brilliant poor row's phenomenon producing because of crystal lattice difference, also can be formed with a resilient coating in substrate surface, described resilient coating is aluminium gallium nitride alloy AlGa
yn
1-ymaterial, 0 < y < 1 wherein.
Accompanying drawing explanation
The generalized section of the nitride semiconductor structure that Fig. 1 provides for a preferred embodiment of the present invention.
The generalized section of the semiconductor light-emitting elements that Fig. 2 is the nitride semiconductor structure made that provides according to a preferred embodiment of the invention.
Primary clustering symbol description:
1 substrate 2N type semiconductor layer
21N type electrode 3P type semiconductor layer
31P type electrode 4 luminescent layers
5 electric holes provide a layer 6P type carrier barrier layer
7N type carrier barrier layer 8 resilient coatings
Embodiment
Advantage in object of the present invention and structural design function thereof, will be explained according to the following drawings and preferred embodiment, the present invention is had to more deep and concrete understanding.
First, in the description of following examples, be to be understood that, when point out one deck (or film) or a structure be configured in another substrate, another layer (or film) or another structure " on " or during D score, it can be positioned at " directly " other substrate, layer (or film) or another structure, also or between the two there is more than one intermediate layer and configure in " indirectly " mode, can be with reference to the accompanying drawings of every one deck position.
Refer to shown in Fig. 1, the generalized section of the nitride semiconductor structure that it provides for a preferred embodiment of the present invention, it includes a n type semiconductor layer 2 and a p type semiconductor layer 3, in n type semiconductor layer 2 and 3 of p type semiconductor layers, dispose a luminescent layer 4 (active layer), 3 of luminescent layer 4 and p type semiconductor layers dispose Yi electricity Dong layer 5 are provided, and electric hole provides layer 5 for InGaN In
xga
1-xn, 0 < x < 1 wherein, the number range of preferred x is 0 < x≤0.1; In addition, layer is provided 5 is 10 doped with concentration in electric hole
17-10
20cm
-3the 4th major element (being preferably carbon); In the present embodiment, n type semiconductor layer 2 is n type gallium nitride based semiconductor layers, and p type semiconductor layer 3 is the gallium nitride based semiconductor layers of P type.
In addition, above-mentioned electric hole provides layer 5 to be greater than 10 doped with concentration
18cm
-3p type admixture (can be for example magnesium), and layer 5 preferred thickness is provided is 1-100nm in electric hole.
Moreover above-mentioned luminescent layer 4 has multiple quantum trap structure (multiple quantum well, MQW); Wherein, multiple quantum trap structure can by the well layer (well) of InGaN and the barrier layer (barrier) of gallium nitride alternately storehouse formed; And electric hole provides layer 5 energy gap (bandgap energy) to be greater than the energy gap of the well layer of multiple quantum trap structure, and electric hole can be entered in the well layer of multiple quantum trap structure, to increase electronics, be combined probability with electric hole, further improving luminous efficiency.
In addition, electric hole provides layer 5 and 3 of p type semiconductor layers to may be configured with a P type carrier barrier layer 6, and P type carrier barrier layer 6 is made by the material with the energy gap that is greater than luminescent layer 4; In the present embodiment, it is P type aluminium gallium nitride alloy (P-AlGaN), to avoid electronics to escape, enters in p type semiconductor layer 3, and it has the electronics of slowing down rate travel, and increases the time that is stranded in luminescent layer 4; And also may be configured with a N-type carrier barrier layer 7 in luminescent layer 4 and 2 of n type semiconductor layers, and N-type carrier barrier layer 7 is made by the material having higher than the energy gap of luminescent layer 4; In the present embodiment, it is N-type aluminium gallium nitride alloy (N-AlGaN), avoids thus electric hole to escape and enters in n type semiconductor layer 2.
According to the nitride semiconductor structure of above-described embodiment, when reality is implemented to use, because electric hole provides layer 5, doped with concentration, be 10
17-10
20cm
-3the 4th major element, utilize the 4th major element to replace the nitrogen-atoms of pentavalent, a positively chargeds electricity hole thus, make electric hole provide layer can there is high electric hole concentration, the 4th above-mentioned major element can, such as being carbon (C), silicon (Si), germanium (Ge), tin (Sn), plumbous (Pb) etc., wherein, be preferably carbon, its former because: in brilliant process of heap of stone, carbon can and form stable Compound C H with the H-H reaction being decomposited by ammonia
4and disengaging nitride-based semiconductor, therefore the content of H reduces, also therefore the related situation of Mg-H bond that makes reduces, cause Mg to have the useful effect of ion kenel, therefore, electric hole provides layer 5 can have high electric hole concentration, provide thus more electric hole to enter luminescent layer 4, and then increase the situation of electronics electricity hole combination.
Refer to shown in Fig. 2, above-mentioned nitride semiconductor structure can be applicable in semiconductor light-emitting elements, the generalized section of the semiconductor light-emitting elements that Fig. 2 is the nitride semiconductor structure made that provides according to a preferred embodiment of the invention, described semiconductor light-emitting elements at least includes:
One substrate 1;
One n type semiconductor layer 2, it is disposed on substrate 1;
One luminescent layer 4, it is disposed on n type semiconductor layer 2; Wherein, luminescent layer 4 has multiple quantum trap structure;
One electric hole provides layer 5, and it is disposed on luminescent layer 4, and electric hole provides layer 5 for InGaN In
xga
1-xn, wherein 0 < x < 1, is preferably 0 < x≤0.1; Moreover it is 10 doped with concentration that electric hole provides layer 5
17-10
20cm
-3the 4th major element (being preferably carbon); Wherein, electric hole provides the thickness of layer 5 to be preferably 1-100nm, and can be greater than 10 doped with concentration
18cm
-3p type admixture (can be for example magnesium), and electric hole provides layer 5 energy gap to be greater than the energy gap of the well layer of multiple quantum trap structure;
One p type semiconductor layer 3, it is disposed at electric hole and provides on layer 5;
One N-type electrode 21, it is disposed on n type semiconductor layer 2 with ohmic contact; And
One P type electrode 31, it is disposed on p type semiconductor layer 3 with ohmic contact; Wherein, N-type electrode 21, P type electrode 31 match electric energy are provided, and can following material but to be not limited only to these materials made: titanium, aluminium, gold, chromium, nickel, platinum and alloy thereof etc., and its manufacture method is that persons skilled in the art are known, and be not emphasis of the present invention, therefore, no longer in the present invention, repeated.
In addition, electricity hole provides layer 5 and 3 of p type semiconductor layers to may be configured with a P type carrier barrier layer 6, and dispose a N-type carrier barrier layer 7 in luminescent layer 4 and 2 of n type semiconductor layers, and N-type carrier barrier layer 7, P type carrier barrier layer 6 are all made by the material having higher than the energy gap of luminescent layer 4; Moreover, for solving the of heap of stone brilliant poor row's phenomenon producing because of crystal lattice difference, also can in substrate 1 surface, be formed with a resilient coating 8, resilient coating 8 is aluminium gallium nitride alloy AlGa
yn
1-ymaterial, 0 < y < 1 wherein.
Thus, implementation from above-mentioned nitride semiconductor structure, semiconductor light-emitting elements of the present invention is to provide the 4th major element admixture of layer 5 to reduce the not activation phenomenon causing because of Mg-H bond by electric hole, make Mg activation and there is the useful effect of acceptor, and then make electric hole provide layer 5 to there is high electric hole concentration, provide more electric hole to enter luminescent layer, increase the situation of electronics electricity hole combination, so that semiconductor light-emitting elements can present enough low impedance, and then obtain good luminous efficiency.
In sum, nitride semiconductor structure of the present invention and semiconductor light-emitting elements, can pass through above-mentioned disclosed embodiment really, reaches desired use effect.
Above-mentioned disclosed accompanying drawing and explanation, be only the preferred embodiments of the present invention, not for limiting protection scope of the present invention; Persons skilled in the art, according to feature of the present invention, other equivalence of doing changes or modifies, and all should be considered as not departing from protection scope of the present invention.
Claims (11)
1. a nitride semiconductor structure, it comprises a n type semiconductor layer and a p type semiconductor layer, in described n type semiconductor layer and described P type semiconductor interlayer, dispose a luminescent layer, described luminescent layer and described P type semiconductor interlayer dispose Yi electricity Dong provides layer, and described electric hole provides layer for InGaN In
xga
1-xn, it is 10 doped with concentration that wherein 0 < x < 1, and described electric hole provides layer
17-10
20cm
-3the 4th major element.
2. nitride semiconductor structure as claimed in claim 1, wherein, described the 4th major element is carbon.
3. nitride semiconductor structure as claimed in claim 1, wherein, described electric hole provides layer to be greater than 10 doped with concentration
18cm
-3p type admixture.
4. nitride semiconductor structure as claimed in claim 3, wherein, described P type admixture is magnesium.
5. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer has multiple quantum trap structure, and described electric hole provides the energy gap of layer to be greater than the energy gap of the well layer of described multiple quantum trap structure.
6. nitride semiconductor structure as claimed in claim 1, wherein, it is 1-100nm that described electric hole provides the thickness of layer.
7. nitride semiconductor structure as claimed in claim 1, wherein, described electric hole provides layer for InGaN In
xga
1-xn, wherein x is 0 < x≤0.1.
8. nitride semiconductor structure as claimed in claim 1, wherein, described electric hole provides layer and described P type semiconductor interlayer to dispose a P type carrier barrier layer, and described P type carrier barrier layer is made by the material having higher than the energy gap of described luminescent layer.
9. nitride semiconductor structure as claimed in claim 8, wherein, described luminescent layer and described N type semiconductor interlayer dispose a N-type carrier barrier layer, and described N-type carrier barrier layer is made by the material having higher than the energy gap of described luminescent layer.
10. nitride semiconductor structure as claimed in claim 1, wherein, described luminescent layer and described N type semiconductor interlayer dispose a N-type carrier barrier layer, and described N-type carrier barrier layer is made by the material having higher than the energy gap of described luminescent layer.
11. 1 kinds of semiconductor light-emitting elements, it at least includes:
One substrate;
One n type semiconductor layer, it is disposed on described substrate;
One luminescent layer, it is disposed on described n type semiconductor layer;
One electric hole provides layer, and it is disposed on described luminescent layer, and described electric hole provides layer for InGaN In
xga
1-xn, it is 10 doped with concentration that wherein 0 < x < 1, and described electric hole provides layer
17-10
20cm
-3the 4th major element;
One p type semiconductor layer, it is disposed at described electric hole and provides on layer;
One N-type electrode, it is disposed on described n type semiconductor layer with ohmic contact; And
One P type electrode, it is disposed on described p type semiconductor layer with ohmic contact.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810450395.3A CN108550670B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
| CN201310029644.9A CN103972340B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810451202.6A CN108321268A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810450545.0A CN108321267A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029644.9A CN103972340B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810450545.0A Division CN108321267A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810451202.6A Division CN108321268A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810450395.3A Division CN108550670B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103972340A true CN103972340A (en) | 2014-08-06 |
| CN103972340B CN103972340B (en) | 2018-06-08 |
Family
ID=51241623
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810450395.3A Expired - Fee Related CN108550670B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
| CN201310029644.9A Expired - Fee Related CN103972340B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810451202.6A Pending CN108321268A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810450545.0A Pending CN108321267A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810450395.3A Expired - Fee Related CN108550670B (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light emitting element |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810451202.6A Pending CN108321268A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN201810450545.0A Pending CN108321267A (en) | 2013-01-25 | 2013-01-25 | Nitride semiconductor structure and semiconductor light-emitting elements |
Country Status (1)
| Country | Link |
|---|---|
| CN (4) | CN108550670B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| CN107591466A (en) * | 2017-08-17 | 2018-01-16 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN109346583A (en) * | 2018-08-31 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109997233A (en) * | 2016-12-01 | 2019-07-09 | 奥斯兰姆奥普托半导体有限责任公司 | Emit the semiconductor body of radiation and the method for manufacturing layer sequence |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080135868A1 (en) * | 2004-10-01 | 2008-06-12 | Mitsubishi Cable Industries, Ltd. | Nitride Semiconductor Light Emitting Element and Method for Manufacturing the Same |
| CN101276875A (en) * | 2007-03-28 | 2008-10-01 | 夏普株式会社 | Semiconductor light emitting device and nitride semiconductor light emitting device |
| JP2009021361A (en) * | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, and method of fabricating nitride-based semiconductor light emitting element |
| CN101542760A (en) * | 2007-04-06 | 2009-09-23 | 住友电气工业株式会社 | Nitride semiconductor light emitting device and process for producing the same |
| CN102185056A (en) * | 2011-05-05 | 2011-09-14 | 中国科学院半导体研究所 | Gallium-nitride-based light emitting diode capable of improving electron injection efficiency |
| CN102208505A (en) * | 2010-03-29 | 2011-10-05 | 大连美明外延片科技有限公司 | Gallium-nitride-based light-emitting diode (LED) epitaxial wafer and growth method thereof |
| CN102474076A (en) * | 2009-07-15 | 2012-05-23 | 住友电气工业株式会社 | Group III nitride semiconductor optical element and epitaxial substrate |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657300B2 (en) * | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
| JP2000058904A (en) * | 1998-08-05 | 2000-02-25 | Hitachi Cable Ltd | Epitaxial wafer and its manufacture as well as light emitting diode |
| JP4032636B2 (en) * | 1999-12-13 | 2008-01-16 | 日亜化学工業株式会社 | Light emitting element |
| KR100541104B1 (en) * | 2004-02-18 | 2006-01-11 | 삼성전기주식회사 | Nitride based semiconductor light emitting device |
| KR100580752B1 (en) * | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | Nitride semiconductor led and fabrication method thereof |
| JP4572963B2 (en) * | 2008-07-09 | 2010-11-04 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device and epitaxial wafer |
| CN101540364B (en) * | 2009-04-23 | 2011-05-11 | 厦门大学 | Nitride luminescent device and production method thereof |
-
2013
- 2013-01-25 CN CN201810450395.3A patent/CN108550670B/en not_active Expired - Fee Related
- 2013-01-25 CN CN201310029644.9A patent/CN103972340B/en not_active Expired - Fee Related
- 2013-01-25 CN CN201810451202.6A patent/CN108321268A/en active Pending
- 2013-01-25 CN CN201810450545.0A patent/CN108321267A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080135868A1 (en) * | 2004-10-01 | 2008-06-12 | Mitsubishi Cable Industries, Ltd. | Nitride Semiconductor Light Emitting Element and Method for Manufacturing the Same |
| CN101276875A (en) * | 2007-03-28 | 2008-10-01 | 夏普株式会社 | Semiconductor light emitting device and nitride semiconductor light emitting device |
| CN101542760A (en) * | 2007-04-06 | 2009-09-23 | 住友电气工业株式会社 | Nitride semiconductor light emitting device and process for producing the same |
| JP2009021361A (en) * | 2007-07-11 | 2009-01-29 | Sumitomo Electric Ind Ltd | Nitride-based semiconductor light emitting element, and method of fabricating nitride-based semiconductor light emitting element |
| CN102474076A (en) * | 2009-07-15 | 2012-05-23 | 住友电气工业株式会社 | Group III nitride semiconductor optical element and epitaxial substrate |
| CN102208505A (en) * | 2010-03-29 | 2011-10-05 | 大连美明外延片科技有限公司 | Gallium-nitride-based light-emitting diode (LED) epitaxial wafer and growth method thereof |
| CN102185056A (en) * | 2011-05-05 | 2011-09-14 | 中国科学院半导体研究所 | Gallium-nitride-based light emitting diode capable of improving electron injection efficiency |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| CN109997233A (en) * | 2016-12-01 | 2019-07-09 | 奥斯兰姆奥普托半导体有限责任公司 | Emit the semiconductor body of radiation and the method for manufacturing layer sequence |
| US10971653B2 (en) | 2016-12-01 | 2021-04-06 | Osram Oled Gmbh | Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence |
| CN107591466A (en) * | 2017-08-17 | 2018-01-16 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN109346583A (en) * | 2018-08-31 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109346583B (en) * | 2018-08-31 | 2021-04-27 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103972340B (en) | 2018-06-08 |
| CN108550670A (en) | 2018-09-18 |
| CN108321267A (en) | 2018-07-24 |
| CN108550670B (en) | 2020-10-27 |
| CN108321268A (en) | 2018-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2538459B1 (en) | Nitride semiconductor light-emitting element and method for producing same | |
| JP5836338B2 (en) | Nitride semiconductor structure and semiconductor light emitting device | |
| CN101582478B (en) | Multi-quantum-well structure used in photoelectron device and manufacturing method thereof | |
| CN103972340A (en) | Nitride semiconductor structure and semiconductor light-emitting component | |
| CN102185057A (en) | Nitride LED (light-emitting diode) structure and nitride LED structure preparing method | |
| EP2017900B1 (en) | Light emitting diode with improved structure | |
| WO2019015186A1 (en) | Ultraviolet led epitaxial structure | |
| CN104465910A (en) | LED chip structure efficiently matched with ZnO thin film and manufacturing method of LED chip structure | |
| CN103441196A (en) | Luminous element and manufacturing method for same | |
| CN103413877A (en) | Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure | |
| JP2019054023A (en) | Group iii nitride semiconductor light-emitting device and method for manufacturing the same | |
| CN102064252A (en) | LED (Light Emitting Diode) and manufacturing method thereof | |
| CN103972345A (en) | Nitride semiconductor structure and semiconductor light-emitting component | |
| CN103972342A (en) | Nitride semiconductor structure and semiconductor light-emitting component | |
| JP2010263189A (en) | Nitride semiconductor light-emitting diode | |
| CN103972339A (en) | Nitride semiconductor structure and semiconductor light-emitting component | |
| CN103035790A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| KR101063286B1 (en) | Light emitting diodes with diffusion barrier | |
| CN102185053A (en) | Light-emitting diode and manufacturing method thereof | |
| CN105355649A (en) | Light emitting diode epitaxial wafer and fabrication method thereof | |
| CN111477730A (en) | Light emitting diode with five-step quantum well and inverted V-shaped electron barrier layer | |
| CN204289496U (en) | A kind of LED chip structure with ZnO film efficient matchings | |
| TWI589018B (en) | Nitride semiconductor structure | |
| CN103972343A (en) | Nitride semiconductor structure and semiconductor light-emitting component | |
| CN102185054A (en) | Light-emitting diode (LED) and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180608 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |