CN102208505A - Gallium-nitride-based light-emitting diode (LED) epitaxial wafer and growth method thereof - Google Patents
Gallium-nitride-based light-emitting diode (LED) epitaxial wafer and growth method thereof Download PDFInfo
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Abstract
The invention discloses a growth method of a gallium-nitride-based epitaxial wafer. In the epitaxial wafer, triethyl gallium used as a metal organic source of gallium and di (cyclopentadienyl) magnesium used as an acceptor impurity growth p-type cavity injection layer are adopted between a multiple quantum well layer and a p-type AlGaN layer; and according to the growth structure, the bulk resistance of the p-type layer is reduced, the effective concentration of the injected cavity is improved, the effective compound of the cavity and an electron in an active region is enlarged, and the luminous efficiency of a light-emitting diode (LED) is improved. According to a standard chip process, a chip which has a size of 300*200 mu m<2> and uses Indium tin oxide (ITO) as a transparent electrode is manufactured, the forward voltage of the chip can be reduced by 0.15V, and the light transmission efficiency is improved by above 17%.
Description
Technical field
The present invention relates to a kind of gallium nitride-based epitaxial sheet and growing method thereof, the GaN-based LED epitaxial wafer and the growing method thereof of particularly a kind of p type Low ESR and high hole concentration.
Technical background
Gallium nitride (GaN) based compound is the direct band gap wide bandgap semiconductor, its band gap is adjustable continuously from 1.8-6.2eV, and has very high puncture voltage, thereby be widely used in high brightness blue green light LED (LED, Light Emitting Diode), royal purple ray laser diode (LD, Laser Diode) and high electron mobility field-effect transistor (HEMT, High Electron Mobility Transistor).In recent years, the development of high brightness blue green light LED rapidly, essential luminescent devices such as the large-scale outdoor display screen of full color high brightness, traffic lights have been become, simultaneously, the white light LEDs that excites yellow fluorescent powder to make by blue-ray LED has been widely used in fields such as backlight, automotive lighting, and has shown huge application potential in the solid light source field.
Along with the industrialization of gallium nitride-based material, the light-emitting diode of high brightness attracts most attention.At present the gallium nitride-based material of high brightness mainly strengthens and luminous intensity by improving light extraction efficiency and internal quantum efficiency.Light extraction efficiency mainly adopts the alligatoring and the laser lift-off of patterned substrate, p type layer to realize.And the progress that improves internal quantum efficiency is relatively slow, be subjected to mainly that hole concentration in the gallium nitride-based material p type layer is lower, the piezoelectric field in the quantum well (MQW) is strong and heterostructure in the inhibition of the more high several aspects of defect concentration.Adopt magnesium as dopant though the p type layer of gallium nitride is main at present, but because magnesium itself is deep acceptor impurity, there is the low and easy shortcoming such as diffusion of activation rate, causes the luminous efficiency of LED device lower (the The effect of the lastquantum barrier on the internal quantum efficiency of InGaN-lightemitting diode that delivered at Applide Physics Letters 93 in 2008 with reference to people such as Eun-Hyun Park).People such as Han Peide have proposed a kind of growing method (Chinese patent publication number CN1367524A) of gallium nitride base compound film of high p type carrier concentration, the growing method that it is mixed altogether by multiple element, and the transition make it reach high p-type carrier concentration through annealing, improved the carrier concentration of nitride, strengthen luminous efficiency and the appearance of no polycrystalline, but this method does not improve the interface crystal mass between active layer and the p type layer, technology relative complex.Publication number is that 200510026750.7 Chinese patent discloses a kind of iii-nitride light emitting devices with p type carrier barrier layer of low epitaxial wafer forward voltage, high cut-in voltage, strong reverse breakdown voltage, relates to a kind of with the growing method of trimethyl gallium as the iii-nitride light emitting devices of the p type carrier barrier layer of the low resistance of the aluminum-gallium-nitrogen/gallium nitride in gallium source or aluminum gallium nitride/indium gallium nitrogen modulation doping.As mentioned above, existing GaN-based LED epitaxial wafer normal conditions all can be at the top of indium gallium nitrogen/gallium nitride Multiple Quantum Well LED or LD extension aluminum gallium nitride electronic barrier layer, and purpose is that the electronics that suppresses active area overflows to p type district, plays the effect of block electrons.But the energy gap of aluminum gallium nitride is much larger than the energy gap of gallium nitride, and its acceptor impurity ionization energy is higher, and the p type layer that obtain high hole concentration is very difficult.Moreover the optimum growth temp of p type aluminum gallium nitride electronic barrier layer is more than 1000 ℃; In-N key in the destructible quantum well layer; for the structure of protecting quantum well is not damaged; the growth temperature of p type aluminum gallium nitride is on the low side generally speaking; can make its growth quality deviation, cause the performance of LED device to be difficult to be further improved.
Therefore, the present invention proposes the GaN-based LED epitaxial wafer and the growing method thereof of a kind of p type Low ESR and high hole concentration.After finishing, introduces quantum trap growth gallium nitride based p type hole injection layer; when improving the hole injection, protected quantum well structure; improved the interface crystal mass between active layer and the P type layer; and make p type gallium aluminium nitrogen layer at high temperature to grow; the quality of epitaxial wafer and the performance of device are improved, and technology is simple relatively.
Summary of the invention
The object of the present invention is to provide a kind of gallium nitride-based epitaxial sheet and growing method thereof that reduces the forward voltage of epitaxial wafer and improve the gallium nitride based LED device brightness.With the metal organic source of the low triethyl-gallium of cracking temperature (TEGa) as gallium, two luxuriant magnesium (Cp
2Mg) as acceptor impurity, growing gallium nitride based p type hole injection layer between gallium nitrate based multiple quantum well layer and p type gallium aluminium nitrogen layer, reduce the volume resistance of device from the growth structure of extension self, effectively suppressing the electronics of active area when overflow in p type district, strengthened the implantation concentration of the hole in p type district to active area, thereby improved effectively compound at active area of electronics and hole, will reduce the forward voltage of gallium nitride based LED device and the brightness that improves device.
Technical scheme of the present invention:
A kind of gallium nitride based LED epitaxial slice, its structure are followed successively by Sapphire Substrate, the gallium nitrate based resilient coating of low temperature, non-doped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, p type hole injection layer, p type gallium aluminium nitrogen layer, p type gallium nitride layer and highly doped p type contact electrode layer from bottom to top.
Wherein said p type hole injection layer thickness is 5～100nm; Preferred thickness range is 20-40nm; Best thickness range is 30nm, and the luminous efficiency of device improves 18.1%, and the forward voltage of device reduces 0.16V.
The growing method of described gallium nitride based LED epitaxial slice, substrate is selected the sapphire in (0001) crystal orientation for use, metal organic source is respectively trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl indium (TMIn) and trimethyl aluminium (TMAl), and nitrogenous source is ammonia (NH
3), n type dopant is the H of 200ppm
2Silane (the SiH that carries
4), p type dopant is two luxuriant magnesium (Cp
2Mg), adopt metal-organic chemical vapor deposition equipment method (MOCVD, Metalorganic Chemical Vapor Deposition) to carry out following growth step successively:
(1) under 500～600 ℃ temperature, the gallium nitrate based resilient coating of growing low temperature on Sapphire Substrate, thickness 15～50nm;
(2) under 1000～1200 ℃ temperature, the non-doped gallium nitride layer of growing, thickness 1～3 μ m;
(3) under 1000～1200 ℃ temperature, growing gallium nitride base n type layer, thickness 1～3 μ m;
(4) at N
2In the environment, under 720～950 ℃ the temperature, the growth multiple quantum well layer, thickness in monolayer 12～25nm;
(5) under 800～1050 ℃ temperature, be metal organic source with the triethyl-gallium, with magnesium for being led growing p-type hole injection layer, thickness 5～100nm;
(6) under 900～1150 ℃ temperature, growing p-type gallium aluminium nitrogen layer, thickness 30～300nm;
(7) under 900～1100 ℃ temperature, growing p-type gallium nitride layer, thickness 100～800nm;
(8) under 850～1000 ℃ temperature, the highly doped p type gallium nitride electrode contact layer of growing, thickness 1～25nm.
On the one hand, during the growing p-type hole injection layer, utilize the triethyl-gallium cracking temperature low, the characteristic that growth rate is slow, just can the grown crystal quality under relatively low temperature epitaxial loayer preferably, thereby concentration that can more effective raising charge carrier increases the conductivity of p type.On the other hand; the growth temperature of multiple quantum well layer is generally between 700-950 ℃; and the optimum growth temp of high-quality p type aluminum gallium nitride electronic barrier layer is more than 1000 ℃; if the growth temperature of p type aluminum gallium nitride electronic barrier layer is higher; just easily produce the fracture of In-N key in the multiple quantum well layer; influence the luminous efficiency of device; simultaneously again because of multiple quantum well layer and the bigger lattice mismatch of gallium aluminium nitrogen layer existence; also can cause the growth quality in boundary layer, p-n junction district poor; when working, LED can produce a large amount of heats; cause the junction temperature of LED device to raise; shorten the life-span of device; so with the metal organic source growing p-type hole injection layer of the slow triethyl-gallium of growth rate as gallium; can be at the p type layer that growth quality is good below 1000 ℃; when increasing the hole implantation concentration; protected the structure of quantum well layer; can also be as the temperature isolation layer of the p type gallium aluminium nitrogen layer of growth under the high temperature; guaranteed the growth quality of p type quantum well layer; alleviated the lattice mismatch of quantum well layer and gallium aluminium nitrogen layer like this; improved the growth quality in boundary layer, p-n junction district; reduced the volume resistance of p type gallium nitride-based material; increase effectively compound at active area of hole and electronics, improved the luminous efficiency of device.Can improve the growth quality of epitaxial wafer by the growing method of extension gallium nitride based p type hole injection layer, reduce the forward voltage of device, improve the brightness of device.
The invention has the advantages that: by using the metal organic source of triethyl-gallium as gallium, growth thickness has improved the performance of the growth quality and the device of epitaxial wafer effectively than the structure of thin gallium nitride based p type hole injection layer between gallium nitrate based multiple quantum well layer and p type gallium aluminium nitrogen layer.Epitaxial wafer is made into 300 * 300 μ m according to standard chips technology
2Be the chip of transparency electrode with ITO.In measuring current is under the standard of 20mA, and its forward voltage can drop to 3.2V by 3.35V, and the brightness of naked core is brought up to 18mW by 16mW, and the efficient of its light output improves more than 17%.
Description of drawings
Fig. 1 is a gallium nitride-based epitaxial sheet primary structure schematic diagram.
101 is Sapphire Substrate, and 102 is the gallium nitrate based resilient coating of low temperature, and 103 is non-doped gallium nitride layer, 104 is n type gallium nitride layer, and 105 is multiple quantum well layer, and 106 is p type hole injection layer, 107 is p type gallium aluminium nitrogen layer, and 108 is p type gallium nitride layer, and 109 is highly doped P type contact electrode layer.
Specific embodiment
Embodiment 1 adopts the mocvd method epitaxial growth:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1050 ℃ in the environment, stablized 10 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 530 ℃ of growth 20nm thickness;
3. be warming up to the non-doped gallium nitride layer of 1100 ℃ of growth 1 μ m thickness;
1100 ℃ the growth 1.5 μ m thickness n type gallium nitride layer;
5. the multiple quantum well layer in 5 cycles of growth in the N2 environment, gallium nitride is built layer: thickness is 20nm, and growth temperature is 850 ℃; Indium gallium nitrogen trap layer: thickness is 1.6nm, and growth temperature is 810 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 900 ℃ of growth 20nm thickness;
7. be warming up to the p-Al of 1060 ℃ of growth 50nm thickness
0.15Ga
0.85The N layer;
8. at the p type gallium nitride layer of 940 ℃ of growth 150nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 940 ℃ of growth 25nm thickness;
10. be cooled to 750 ℃, annealing 10min;
11. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, the p type of under lower temperature, having grown hole injection layer, and thickness is 20nm.Adopt this structure, the luminous efficiency of device improves 17%, and the forward voltage of device reduces 0.10V.
Embodiment 2 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1250 ℃ in the environment, stablized 5 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 540 ℃ of growth 15nm thickness;
3. be warming up to the non-doped gallium nitride layer of 1150 ℃ of growth 2 μ m thickness;
1150 ℃ the growth 2 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 15 cycles of growth in the environment, gallium nitride is built layer: thickness is 13nm, and growth temperature is 950 ℃; Indium gallium nitrogen trap layer: thickness is 2nm, and growth temperature is 830 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 1050 ℃ of growth 50nm thickness;
7. be warming up to the p-Al of 1020 ℃ of growth 120nm thickness
0.1Ga
0.9The N layer;
8. be cooled to the p type gallium nitride layer of 1000 ℃ of growth 200nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 1000 ℃ of growth 8nm thickness;
10. be cooled to 730 ℃, annealing 8min;
11. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, the p type of at high temperature having grown hole injection layer, and thickness is 50nm.Adopt this structure, the luminous efficiency of device improves 17.5%, and the forward voltage of device reduces 0.13V.
Embodiment 3 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1190 ℃ in the environment, stablized 7 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 550 ℃ of growth 30nm thickness;
3. be warming up to the non-doped gallium nitride layer of 1200 ℃ of growth 2 μ m thickness;
1200 ℃ the growth 3 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 20 cycles of growth in the environment, gallium nitride is built layer: thickness is 10nm, and growth temperature is 850 ℃; Indium gallium nitrogen trap layer: thickness is 2nm, and growth temperature is 820 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 950 ℃ of growth 100nm thickness;
7. be warming up to the p-Al of 1150 ℃ of growth 100nm thickness
0.08Ga
0.92The N layer;
8. at the p type gallium nitride layer of 1100 ℃ of growth 300nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 1000 ℃ of growth 1nm thickness;
10. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, the p type of under higher relatively temperature, having grown hole injection layer, and thickness is 100nm.Adopt this structure, can increase the injection rate of the hole of p type, can also improve the growth quality of epitaxial wafer to active area.The luminous efficiency of device improves 17.8%, and the forward voltage of device reduces 0.14V.
Embodiment 4 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1170 ℃ in the environment, stablized 7 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 600 ℃ of growth 25nm thickness;
3. be warming up to 1170 ℃, the non-doped gallium nitride layer of 1.8 μ m thickness of growing;
1180 ℃ the growth 1.8 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 10 cycles of growth in the environment, gallium nitride is built layer: thickness is 15nm, and growth temperature is 850 ℃; Indium gallium nitrogen trap layer: thickness is 1.8nm, and growth temperature is 780 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 900 ℃ of growth 10nm thickness;
7. be warming up to the p-Al of 1080 ℃ of growth 70nm thickness
0.08Ga
0.92The N layer;
8. at the p type gallium nitride layer of 1040 ℃ of growth 350nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 900 ℃ of growth 15nm thickness;
10. be cooled to 800 ℃, annealing 8min;
11. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, the p type of under higher relatively temperature, having grown hole injection layer, and thickness is 10nm.Adopt this structure, the luminous efficiency of device improves 17.6%, and the forward voltage of device reduces 0.15V.
Embodiment 5 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1150 ℃ in the environment, stablized 7 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 520 ℃ of growth 25nm thickness;
3. be warming up at 1030 ℃ the non-doped gallium nitride layer of 1.2 μ m thickness of growing;
1000 ℃ the growth 1.9 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 10 cycles of growth in the environment, gallium nitride is built layer: thickness is 15nm, and growth temperature is 810 ℃; Indium gallium nitrogen trap layer: thickness is 1.8nm, and growth temperature is 720 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 930 ℃ of growth 5nm thickness;
7. be warming up to the p-Al of 1050 ℃ of growth 50nm thickness
0.08Ga
0.92The N layer;
8. be cooled to the p type gallium nitride layer of 900 ℃ of growth 230nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 850 ℃ of growth 3nm thickness;
10. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, with pAlGaN electronic barrier layer uniform temp under the p type hole injection layer of having grown, thickness is 50nm.Adopt this structure, the luminous efficiency of device improves 17%, and the forward voltage of device reduces 0.15V.
Embodiment 6 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1150 ℃ in the environment, stablized 7 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 500 ℃ of growth 25nm thickness;
3. be warming up at 1120 ℃ the non-doped gallium nitride layer of the 1.4 μ m thickness of growing;
1120 ℃ the growth 2.5 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 10 cycles of growth in the environment, gallium nitride is built layer: thickness is 15nm, and growth temperature is 860 ℃; Indium gallium nitrogen trap layer: thickness is 1.8nm, and growth temperature is 740 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 800 ℃ of growth 40nm thickness;
7. be warming up to the p-Al of 980 ℃ of growth 60nm thickness
0.08Ga
0.92The N layer;
8. be warming up to the p type gallium nitride layer of 1000 ℃ of growth 170nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 960 ℃ of growth 25nm thickness;
10. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, and builds the p type hole injection layer of having grown under the lower temperature in relative quantum, and thickness is 40nm.Adopt this structure, can improve hole and the electronics effective recombination rate in quantum well, the luminous efficiency of device improves 18%, and the forward voltage of device reduces 0.15V.Embodiment 7 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1150 ℃ in the environment, stablized 7 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 540 ℃ of growth 35nm thickness;
3. be warming up at 1000 ℃ the non-doped gallium nitride layer of the 1 μ m thickness of growing;
1020 ℃ the growth 1 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 10 cycles of growth in the environment, gallium nitride is built layer: thickness is 21nm, and growth temperature is 860 ℃; Indium gallium nitrogen trap layer: thickness is 2nm, and growth temperature is 740 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 950 ℃ of growth 30nm thickness;
7. be warming up to the p-Al of 980 ℃ of growth 60nm thickness
0.08Ga
0.92The N layer;
8. be warming up to the p type gallium nitride layer of 960 ℃ of growth 800nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 930 ℃ of growth 10nm thickness;
10. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, and builds the p type hole injection layer of having grown under the lower temperature in relative quantum, and thickness is 30nm.Adopt this structure, can improve hole and the electronics effective recombination rate in quantum well, the luminous efficiency of device improves 18.1%, and the forward voltage of device reduces 0.16V.
Embodiment 8 adopts MOCVD growing epitaxial sheet, from top to bottom growth successively:
1. the Sapphire Substrate in (0001) crystal orientation is put into reative cell, then at H
2Be warming up to 1150 ℃ in the environment, stablized 8 minutes, substrate is carried out high temperature purification;
2. be cooled to the gallium nitrate based resilient coating of low temperature of 540 ℃ of growth 50nm thickness;
3. be warming up at 1120 ℃ the non-doped gallium nitride layer of the 3 μ m thickness of growing;
1100 ℃ the growth 2.5 μ m thickness n type gallium nitride layer;
5. at N
2The multiple quantum well layer in 10 cycles of growth in the environment, gallium nitride is built layer: thickness is 23nm, and growth temperature is 860 ℃; Indium gallium nitrogen trap layer: thickness is 2nm, and growth temperature is 740 ℃;
6. be warming up to the gallium nitride based p type hole injection layer of 950 ℃ of growth 50nm thickness;
7. be warming up to the p-Al of 1040 ℃ of growth 150nm thickness
0.08Ga
0.92The N layer;
8. be warming up to the p type gallium nitride layer of 980 ℃ of growth 500nm thickness;
9. at the highly doped p type gallium nitride electrode contact layer of 940 ℃ of growth 5nm thickness;
10. be cooled to room temperature, growth ending.
The design feature of this epitaxial wafer is after Multiple Quantum Well has been grown, and builds the p type hole injection layer of having grown under the lower temperature in relative quantum, and thickness is 60nm.Adopt this structure, the luminous efficiency of device improves 17.6%, and the forward voltage of device reduces 0.14V.
Claims (5)
1. gallium nitride based LED epitaxial slice, its structure is followed successively by Sapphire Substrate, the gallium nitrate based resilient coating of low temperature, non-doped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, p type gallium aluminium nitrogen layer, p type gallium nitride layer and highly doped p type contact electrode layer from bottom to top, it is characterized in that also having p type hole injection layer between multiple quantum well layer and the p type gallium aluminium nitrogen layer.
2. according to the gallium nitride based LED epitaxial slice described in claims 1, it is characterized in that described p type hole injection layer thickness is 5～100nm.
3. according to the gallium nitride based LED epitaxial slice described in claims 1, it is characterized in that described p type hole injection layer thickness is 20～40nm.
4. according to the gallium nitride based LED epitaxial slice described in claims 1, it is characterized in that described p type hole injection layer thickness is 30nm.
5. according to the growing method of the gallium nitride based LED epitaxial slice described in any one of claims 1-4, adopt the metallo-organic compound chemical vapour deposition technique, carry out following growth step successively:
(1) under 500～600 ℃ temperature, the gallium nitrate based resilient coating of growing low temperature on Sapphire Substrate, thickness 15～50nm;
(2) under 1000～1200 ℃ temperature, the non-doped gallium nitride layer of growing, thickness 1～3 μ m;
(3) under 1000～1200 ℃ temperature, growing gallium nitride base n type layer, thickness 1～3 μ m;
(4) at N
2In the environment, under 720～950 ℃ the temperature, the growth multiple quantum well layer, thickness in monolayer 12～25nm;
(5) under 800～1050 ℃ temperature, be metal organic source with the triethyl-gallium, with magnesium for being led the growing p-type hole injection layer;
(6) under 900～1150 ℃ temperature, growing p-type gallium aluminium nitrogen layer, thickness 30～300nm;
(7) under 900～1100 ℃ temperature, growing p-type gallium nitride layer, thickness 100～800nm;
(8) under 850～1000 ℃ temperature, the highly doped p type gallium nitride electrode contact layer of growing, thickness 1～25nm.
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