CN103811601A - Method for GaN base LED multi-stage buffer layer growth with sapphire substrate serving as substrate - Google Patents
Method for GaN base LED multi-stage buffer layer growth with sapphire substrate serving as substrate Download PDFInfo
- Publication number
- CN103811601A CN103811601A CN201410090745.1A CN201410090745A CN103811601A CN 103811601 A CN103811601 A CN 103811601A CN 201410090745 A CN201410090745 A CN 201410090745A CN 103811601 A CN103811601 A CN 103811601A
- Authority
- CN
- China
- Prior art keywords
- growth
- layer
- gan
- temperature
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 30
- 239000010980 sapphire Substances 0.000 title claims abstract description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 239000012298 atmosphere Substances 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 10
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 5
- 239000013256 coordination polymer Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 139
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
Abstract
The invention provides a method for GaN base LED multi-stage buffer layer growth with a sapphire substrate serving as a substrate. The method for growth of a multi-stage buffer layer epitaxy structure comprises the steps of enabling the substrate to undergo high-temperature cleaning treatment in hydrogen atmosphere, cooling the temperature to 600 DEG C, adjusting the epitaxy growth atmosphere to make preparations for growth of a multi-stage LT-AlGaN/MT-GaN/HT-GaN buffer layer, growing a GaN undoped layer, growing an N type GaN layer stable in doping concentration, growing a shallow quantum well layer, growing a luminous layer multiple quantum well layer, growing a low-temperature P type GaN layer, growing a PAlGaN current barrier layer, a high-temperature P type GaN layer and a P type contact layer, and adopting pure nitrogen atmosphere to perform annealing treatment after epitaxial growth is finished. The problem of large lattice mismatch between sapphire and GaN is solved well through the multi-stage LT-AlGaN/MT-GaN/HT-GaN buffer layer, penetration dislocation is reduced, crystal quality is improved, electric leakage is reduced, the brightness of an epitaxial slice is improved, and LED light-emitting efficiency is improved.
Description
Technical field
The present invention relates to GaN based light-emitting diode (LED) technical field of material, be specially a kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate.
Background technology
Semiconductor light-emitting-diode (light-emission diodes, LED), because it has the advantages such as volume is little, energy consumption is low, the life-span is long, environmental and durable, is well applied in fields such as indicator light, display screen, backlights.At present blue, green light LED mainly uses GaN as basis material, because of GaN be direct band gap semiconductor material with wide forbidden band, its ternary alloy three-partalloy In
xga
1-xn (x=0~1) can band gap can be from 0.7eV(InN) to 3.4eV(GaN) adjustable continuously, the whole region of emission wavelength covering visible light and black light.Recently along with LED is in the extensive use in white-light illuminating field, the LED of high brightness becomes the main target that people pursue.
Take sapphire as substrate, in the epitaxial layer of gallium nitride-based light-emitting diode growth course of growth, because sapphire and GaN exist significant lattice mismatch, GaN based light-emitting diode material can the very large stress of generation in growth course.This stress can have influence on the brightness of internal quantum efficiency and the epitaxial wafer of epitaxial wafer, also can have influence on antistatic effect simultaneously, and in typical epitaxial layer structure, take low temperature GaN layer as resilient coating, this layer has great role in epitaxial growth.And for resilient coating, the effect that different growing methods plays varies in size, most important effect, as discharged the stress in crystallization process, is blocked up the threading dislocation that goes out, and improves crystal mass etc.
Summary of the invention
Technical problem solved by the invention is to provide a kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate, to solve the problem in above-mentioned background technology.
Technical problem solved by the invention realizes by the following technical solutions: a kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate, its multi-level buffer layer epitaxial structure, order from bottom to top comprises successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN current barrier layer, high temperature P type GaN layer, P type contact layer, and the growing method of its epitaxial structure comprises following concrete steps:
(1) substrate is carried out in 1000-1200 ℃ of hydrogen atmosphere to high-temperature cleaning and process 5-20min, then carry out nitrogen treatment, substrate is sapphire material;
(2) temperature is dropped to 600 ℃, adjust epitaxial growth atmosphere and prepare the multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating of growth, described multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating comprises multiple overlapping LT-AlGaN/MT-GaN/HT-GaN structures successively, at high temperature through H
2the AlGaN layer of growing on the sapphire substrate of processing, epitaxial growth under 600 ℃, reaction cavity pressure 500Torr condition, thickness is 10-30nm; After AlGaN layer growth completes, temperature is increased to 1010-1100 ℃ and carries out thermal anneal process; Afterwards, MT-GaN layer carries out epitaxial growth with 4.0-10.0 μ m/h high development speed under 950 ℃, reaction cavity pressure 400Torr condition, and thickness is 0.2-2 μ m; HT-GaN layer is to carry out epitaxial growth with the low growth rate of 2.0-4.0 μ m/h under 1080 degree, reaction cavity pressure 200Torr condition in temperature, and thickness is 0.1-2 μ m, finally under 1000-1010 ℃ of condition through H
2gas disposal epitaxial surface, prepares growth next cycle, and multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure is 2-20 the cycle of overlapping growth successively;
(3) after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth finishes, temperature is adjusted to 1000-1200 ℃, epitaxial growth thickness is the GaN non-doped layer of 0.5-2 μ m, and growth pressure is 100-300Torr, and V/III is than being 100-3000;
(4) after described GaN non-doped layer growth finishes, the N-type GaN layer of grow doping concentration stabilize, thickness is 2.4-8.4 μ m, and growth temperature is 1000-1200 ℃, and pressure is 100-600Torr, and V/III is than being 100-3000;
(5) after described N-type GaN layer growth finishes, the shallow quantum well layer of growing, described shallow quantum well layer comprises successively overlapping quantum well structure of 3-15, growth temperature is 820-920 ℃, growth pressure is 100-500Torr, and V/III is than being 300-5000, and thickness is 10-200nm;
(6) after described shallow quantum well layer growth finishes, light-emitting layer grows multiple quantum well layer, growth temperature is 700-850 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, and described luminescent layer Multiple Quantum Well is by the In in 6-12 cycle
yga
1-yn (x<y<1)/GaN Multiple Quantum Well composition, described In
yga
1-yn (x<y<1) quantum well layer thickness is 2-5nm, and growth temperature is 720-820 ℃; Described GaN barrier layer thickness is 8-15nm, and growth temperature is 820-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000;
(7) after described luminescent layer quantum well layer growth finishes, the low temperature P type GaN layer that growth thickness is 10-100nm, growth temperature is 620-820 ℃, and growth time is 5-35min, and growth pressure is 100-500Torr, and V/III is than being 300-5000;
(8) after described low temperature P type GaN layer growth finishes, growth thickness is the PAlGaN current barrier layer of 10-200nm, growth temperature is 800-1200 ℃, growth time is 2-18min, growth pressure is 50-500Torr, V/III is than being 10-1000, and in P type AlGaN layer, the molar constituent content of Al is 5%~30%;
(9) after described PAlGaN current barrier layer growth finishes, the high temperature P type GaN layer that growth thickness is 100-800nm, growth temperature is 850-950 ℃, and growth time is 5-40min, and growth pressure is 100-500Torr, and V/III is than being 300-5000;
(10) after described high temperature P type GaN layer growth finishes, the P type contact layer that growth thickness is 5-20nm, growth temperature is 850-1050 ℃, and growth time is 1-10min, and growth pressure is 100-500Torr, and V/III is than being 1000-20000;
(11) after epitaxial growth finishes, the temperature of reative cell is down to 650-800 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 2-15min, be then down to room temperature, subsequently, make single small-size chips through cleaning, deposition, photoetching and etching subsequent machining technology.
In the growth course of described epitaxial structure with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as Ga, Al, In and N source.
In the growth course of described epitaxial structure with silane (SiH
4) and two luxuriant magnesium (CP
2mg) respectively as N, P type dopant.
In the growth course of described epitaxial structure with hydrogen (H
2) or nitrogen (N
2) as carrier gas.
Compared with public technology, there is following advantage in the present invention: the present invention better solves the Macrolattice mismatch problem between sapphire and GaN by multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure, can reduce the stress between sapphire and GaN, reduce threading dislocation, improve crystal mass, reduce electric leakage; Simultaneously, this kind of growing method can progressively be buried in oblivion the threading dislocation from substrate and the generation of GaN interface in the process of periodicity alternating growth, further reduces threading dislocation, thereby reduces the non-radiative recombination center of active area, improve the brightness of epitaxial wafer, improve LED luminous efficiency.
Accompanying drawing explanation
Fig. 1 is the multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure growth of epitaxial loayer of the present invention schematic diagram.
Embodiment
In order to make technological means of the present invention, creation characteristic, workflow, using method reach object and effect is easy to understand, below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
A kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate, its multi-level buffer layer epitaxial structure, order from bottom to top comprises successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN current barrier layer, high temperature P type GaN layer, P type contact layer, and the growing method of its epitaxial structure comprises following concrete steps:
(1) substrate is carried out in 1000 ℃ of hydrogen atmospheres to high-temperature cleaning and process 5min, then carry out nitrogen treatment, substrate is sapphire material;
(2) temperature is dropped to 600 ℃, adjust epitaxial growth atmosphere and prepare the multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating of growth, described multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating comprises multiple overlapping LT-AlGaN/MT-GaN/HT-GaN structures successively, at high temperature through H
2the AlGaN layer of growing on the sapphire substrate of processing, epitaxial growth under 600 ℃, reaction cavity pressure 500Torr condition, thickness is 10-30nm; After AlGaN layer growth completes, temperature is increased to 1010-1100 ℃ and carries out thermal anneal process; Afterwards, MT-GaN layer carries out epitaxial growth with 4.0 μ m/h high development speed under 950 ℃, reaction cavity pressure 400Torr condition, and thickness is 0.2 μ m; HT-GaN layer carries out epitaxial growth with the low growth rate of 2.0 μ m/h under temperature is 1080 ℃, reaction cavity pressure 200Torr condition, and thickness is 0.1 μ m, finally under 1000 ℃ of conditions through H
2gas disposal epitaxial surface, prepares growth next cycle, and multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure is 2 cycles of overlapping growth successively;
(3) after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth finishes, temperature is adjusted to 1000 ℃, epitaxial growth thickness is the GaN non-doped layer of 0.5 μ m, and growth pressure is 100Torr, and V/III ratio is 100;
(4) after described GaN non-doped layer growth finishes, the N-type GaN layer of grow doping concentration stabilize, thickness is 2.4 μ m, and growth temperature is 1000 ℃, and pressure is 100Torr, and V/III ratio is 100;
(5) after described N-type GaN layer growth finishes, the shallow quantum well layer of growing, described shallow quantum well layer comprises 3 overlapping quantum well structures successively, and growth temperature is 820 ℃, and growth pressure is 100Torr, and V/III ratio is 300, thickness is 10nm;
(6) after described shallow quantum well layer growth finishes, light-emitting layer grows multiple quantum well layer, growth temperature is 700 ℃, and growth pressure is 100Torr, and V/III mol ratio is 300, and described luminescent layer Multiple Quantum Well is by the In in 6 cycles
yga
1-yn (x<y<1)/GaN Multiple Quantum Well composition, described In
yga
1-yn (x<y<1) quantum well layer thickness is 2nm, and growth temperature is 720 ℃; Described GaN barrier layer thickness is 8nm, and growth temperature is 820 ℃, and growth pressure is 100Torr, and V/III mol ratio is 300;
(7) after described luminescent layer quantum well layer growth finishes, the low temperature P type GaN layer that growth thickness is 10nm, growth temperature is 620 ℃, and growth time is 5min, and growth pressure is 100Torr, and V/III ratio is 300;
(8) after described low temperature P type GaN layer growth finishes, the PAlGaN current barrier layer that growth thickness is 10nm, growth temperature is 800 ℃, and growth time is 2min, and growth pressure is 50Torr, and V/III ratio is that the molar constituent content of Al in 10, P type AlGaN layer is 5%;
(9) after described PAlGaN current barrier layer growth finishes, the high temperature P type GaN layer that growth thickness is 100nm, growth temperature is 850 ℃, and growth time is 5min, and growth pressure is 100Torr, and V/III ratio is 300;
(10) after described high temperature P type GaN layer growth finishes, growth thickness is at the P of 5nm type contact layer, and growth temperature is 850 ℃, and growth time is 1min, and growth pressure is 100Torr, and V/III ratio is 1000;
(11) after epitaxial growth finishes, the temperature of reative cell is down to 650-800 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 2min, be then down to room temperature, subsequently, make single small-size chips through cleaning, deposition, photoetching and etching subsequent machining technology.
In the present embodiment with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as Ga, Al, In and N source; With silane (SiH
4) and two luxuriant magnesium (CP
2mg) respectively as N, P type dopant, with hydrogen (H
2) as carrier gas.
Embodiment 2
A kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate, its multi-level buffer layer epitaxial structure, order from bottom to top comprises successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN current barrier layer, high temperature P type GaN layer, P type contact layer, and the growing method of its epitaxial structure comprises following concrete steps:
(1) substrate is carried out in 1200 ℃ of hydrogen atmospheres to high-temperature cleaning and process 20min, then carry out nitrogen treatment, the outer sapphire material of substrate;
(2) temperature is dropped to 600 ℃, adjust epitaxial growth atmosphere and prepare the multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating of growth, described multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating comprises multiple overlapping LT-AlGaN/MT-GaN/HT-GaN structures successively, at high temperature through H
2the AlGaN layer of growing on the sapphire substrate of processing, epitaxial growth under 600 ℃, reaction cavity pressure 500Torr condition, thickness is 30nm; After AlGaN layer growth completes, temperature is increased to 1100 ℃ and carries out thermal anneal process; Afterwards, MT-GaN layer carries out epitaxial growth with 10.0 μ m/h high development speed under 950 ℃, reaction cavity pressure 400Torr condition, and thickness is 2 μ m; HT-GaN layer carries out epitaxial growth with the low growth rate of 4.0 μ m/h under temperature is 1080 ℃, reaction cavity pressure 200Torr condition, and thickness is 2 μ m, finally under 1010 ℃ of conditions through H
2gas disposal epitaxial surface, prepares growth next cycle, and multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure is 20 cycles of overlapping growth successively;
(3) after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth finishes, temperature is adjusted to 1200 ℃, epitaxial growth thickness is the GaN non-doped layer of 2 μ m, and growth pressure is 300Torr, and V/III ratio is 3000;
(4) after described GaN non-doped layer growth finishes, the N-type GaN layer of grow doping concentration stabilize, thickness is 8.4 μ m, and growth temperature is 1200 ℃, and pressure is 600Torr, and V/III ratio is 3000;
(5) after described N-type GaN layer growth finishes, the shallow quantum well layer of growing, described shallow quantum well layer comprises 15 overlapping quantum well structures successively, and growth temperature is 920 ℃, and growth pressure is 500Torr, and V/III ratio is 5000, thickness is 200nm;
(6) after described shallow quantum well layer growth finishes, light-emitting layer grows multiple quantum well layer, growth temperature is 850 ℃, and growth pressure is 500Torr, and V/III mol ratio is 5000, and described luminescent layer Multiple Quantum Well is by the In in 12 cycles
yga
1-yn (x<y<1)/GaN Multiple Quantum Well composition, described In
yga
1-yn (x<y<1) quantum well layer thickness is 5nm, and growth temperature is 820 ℃; Described GaN barrier layer thickness is 15nm, and growth temperature is 920 ℃, and growth pressure is 500Torr, and V/III mol ratio is 5000;
(7) after described luminescent layer quantum well layer growth finishes, the low temperature P type GaN layer that growth thickness is 100nm, growth temperature is 820 ℃, and growth time is 35min, and growth pressure is 500Torr, and V/III ratio is 5000;
(8) after described low temperature P type GaN layer growth finishes, the PAlGaN current barrier layer that growth thickness is 200nm, growth temperature is 1200 ℃, growth time is 18min, growth pressure is 500Torr, and V/III ratio is that the molar constituent content of Al in 1000, P type AlGaN layer is 30%;
(9) after described PAlGaN current barrier layer growth finishes, the high temperature P type GaN layer that growth thickness is 800nm, growth temperature is 950 ℃, and growth time is 40min, and growth pressure is 500Torr, and V/III ratio is 5000;
(10) after described high temperature P type GaN layer growth finishes, the P type contact layer that growth thickness is 20nm, growth temperature is 1050 ℃, and growth time is 10min, and growth pressure is 500Torr, and V/III ratio is 20000;
(11) after epitaxial growth finishes, the temperature of reative cell is down to 800 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 15min, be then down to room temperature, subsequently, make single small-size chips through cleaning, deposition, photoetching and etching subsequent machining technology.
In the present embodiment with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as Ga, Al, In and N source; With silane (SiH
4) and two luxuriant magnesium (CP
2mg) respectively as N, P type dopant, with hydrogen (H
2) as carrier gas.
Embodiment 3
A kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate, its multi-level buffer layer epitaxial structure, order from bottom to top comprises successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN current barrier layer, high temperature P type GaN layer, P type contact layer, and the growing method of its epitaxial structure comprises following concrete steps:
(1) substrate is carried out in 1100 ℃ of hydrogen atmospheres to high-temperature cleaning and process 10min, then carry out nitrogen treatment, the outer sapphire material of substrate;
(2) temperature is dropped to 600 ℃, adjust epitaxial growth atmosphere and prepare the multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating of growth, described multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating comprises multiple overlapping LT-AlGaN/MT-GaN/HT-GaN structures successively, at high temperature through H
2the AlGaN layer of growing on the sapphire substrate of processing, epitaxial growth under 600 ℃, reaction cavity pressure 500Torr condition, thickness is 20nm; After AlGaN layer growth completes, temperature is increased to 1050 ℃ and carries out thermal anneal process; Afterwards, MT-GaN layer carries out epitaxial growth with 5.0 μ m/h high development speed under 950 ℃, reaction cavity pressure 400Torr condition, and thickness is 1 μ m; HT-GaN layer carries out epitaxial growth with the low growth rate of 3.0 μ m/h under temperature is 1080 ℃, reaction cavity pressure 200Torr condition, and thickness is 1 μ m, finally under 1000 ℃ of conditions through H
2gas disposal epitaxial surface, prepares growth next cycle, and multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure is 15 cycles of overlapping growth successively;
(3) after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth finishes, temperature is adjusted to 1100 ℃, epitaxial growth thickness is the GaN non-doped layer of 1 μ m, and growth pressure is 200Torr, and V/III ratio is 1000;
(4) after described GaN non-doped layer growth finishes, the N-type GaN layer of grow doping concentration stabilize, thickness is 5.0 μ m, and growth temperature is 1100 ℃, and pressure is 500Torr, and V/III ratio is 2000;
(5) after described N-type GaN layer growth finishes, the shallow quantum well layer of growing, described shallow quantum well layer comprises 12 overlapping quantum well structures successively, and growth temperature is 850 ℃, and growth pressure is 400Torr, and V/III ratio is 4000, thickness is 100nm;
(6) after described shallow quantum well layer growth finishes, light-emitting layer grows multiple quantum well layer, growth temperature is 800 ℃, and growth pressure is 400Torr, and V/III mol ratio is 4000, and described luminescent layer Multiple Quantum Well is by the In in 10 cycles
yga
1-yn (x<y<1)/GaN Multiple Quantum Well composition, described In
yga
1-yn (x<y<1) quantum well layer thickness is 4nm, and growth temperature is 800 ℃; Described GaN barrier layer thickness is 10nm, and growth temperature is 900 ℃, and growth pressure is 300Torr, and V/III mol ratio is 3000;
(7) after described luminescent layer quantum well layer growth finishes, the low temperature P type GaN layer that growth thickness is 50nm, growth temperature is 720 ℃, and growth time is 30min, and growth pressure is 400Torr, and V/III ratio is 3000;
(8) after described low temperature P type GaN layer growth finishes, the PAlGaN current barrier layer that growth thickness is 100nm, growth temperature is 1000 ℃, growth time is 15min, growth pressure is 400Torr, and V/III ratio is that the molar constituent content of Al in 500, P type AlGaN layer is 25%;
(9) after described PAlGaN current barrier layer growth finishes, the high temperature P type GaN layer that growth thickness is 500nm, growth temperature is 900 ℃, and growth time is 30min, and growth pressure is 300Torr, and V/III ratio is 1000;
(10) after described high temperature P type GaN layer growth finishes, the P type contact layer that growth thickness is 10nm, growth temperature is 950 ℃, and growth time is 5min, and growth pressure is 400Torr, and V/III ratio is 10000;
(11) after epitaxial growth finishes, the temperature of reative cell is down to 700 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 10min, be then down to room temperature, subsequently, make single small-size chips through cleaning, deposition, photoetching and etching subsequent machining technology.
In the present embodiment with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as Ga, Al, In and N source; With silane (SiH
4) and two luxuriant magnesium (CP
2mg) respectively as N, P type dopant, with hydrogen (H
2) as carrier gas.
The present invention better solves the Macrolattice mismatch problem between sapphire and GaN by multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure, can reduce the stress between sapphire and GaN, reduces threading dislocation, improves crystal mass, reduces electric leakage; Simultaneously, this kind of growing method can progressively be buried in oblivion the threading dislocation from substrate and the generation of GaN interface in the process of periodicity alternating growth, further reduces threading dislocation, thereby reduces the non-radiative recombination center of active area, improve the brightness of epitaxial wafer, improve LED luminous efficiency.
More than show and described basic principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (4)
1. the GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate, its multi-level buffer layer epitaxial structure, order from bottom to top comprises successively: substrate, multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating, GaN non-doped layer, N-type GaN layer, shallow quantum well layer, luminescent quantum trap layer, low temperature P type GaN layer, PAlGaN current barrier layer, high temperature P type GaN layer, P type contact layer, is characterized in that: the growing method of its epitaxial structure comprises following concrete steps:
(1) substrate is carried out in 1000-1200 ℃ of hydrogen atmosphere to high-temperature cleaning and process 5-20min, then carry out nitrogen treatment, substrate is sapphire material;
(2) temperature is dropped to 600 ℃, adjust epitaxial growth atmosphere and prepare the multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating of growth, described multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating comprises multiple overlapping LT-AlGaN/MT-GaN/HT-GaN structures successively, at high temperature through H
2the AlGaN layer of growing on the sapphire substrate of processing, epitaxial growth under 600 ℃, reaction cavity pressure 500Torr condition, thickness is 10-30nm; After AlGaN layer growth completes, temperature is increased to 1010-1100 ℃ and carries out thermal anneal process; Afterwards, MT-GaN layer carries out epitaxial growth with 4.0-10.0 μ m/h high development speed under 950 ℃, reaction cavity pressure 400Torr condition, and thickness is 0.2-2 μ m; HT-GaN layer is to carry out epitaxial growth with the low growth rate of 2.0-4.0 μ m/h under 1080 degree, reaction cavity pressure 200Torr condition in temperature, and thickness is 0.1-2 μ m, finally under 1000-1010 ℃ of condition through H
2gas disposal epitaxial surface, prepares growth next cycle, and multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure is 2-20 the cycle of overlapping growth successively;
(3) after described multistage LT-AlGaN/MT-GaN/HT-GaN buffer growth finishes, temperature is adjusted to 1000-1200 ℃, epitaxial growth thickness is the GaN non-doped layer of 0.5-2 μ m, and growth pressure is 100-300Torr, and V/III is than being 100-3000;
(4) after described GaN non-doped layer growth finishes, the N-type GaN layer of grow doping concentration stabilize, thickness is 2.4-8.4 μ m, and growth temperature is 1000-1200 ℃, and pressure is 100-600Torr, and V/III is than being 100-3000;
(5) after described N-type GaN layer growth finishes, the shallow quantum well layer of growing, described shallow quantum well layer comprises successively overlapping quantum well structure of 3-15, growth temperature is 820-920 ℃, growth pressure is 100-500Torr, and V/III is than being 300-5000, and thickness is 10-200nm;
(6) after described shallow quantum well layer growth finishes, light-emitting layer grows multiple quantum well layer, growth temperature is 700-850 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000, and described luminescent layer Multiple Quantum Well is by the In in 6-12 cycle
yga
1-yn (x<y<1)/GaN Multiple Quantum Well composition, described In
yga
1-yn (x<y<1) quantum well layer thickness is 2-5nm, and growth temperature is 720-820 ℃; Described GaN barrier layer thickness is 8-15nm, and growth temperature is 820-920 ℃, and growth pressure is 100-500Torr, and V/III mol ratio is 300-5000;
(7) after described luminescent layer quantum well layer growth finishes, the low temperature P type GaN layer that growth thickness is 10-100nm, growth temperature is 620-820 ℃, and growth time is 5-35min, and growth pressure is 100-500Torr, and V/III is than being 300-5000;
(8) after described low temperature P type GaN layer growth finishes, growth thickness is the PAlGaN current barrier layer of 10-200nm, growth temperature is 800-1200 ℃, growth time is 2-18min, growth pressure is 50-500Torr, V/III is than being 10-1000, and in P type AlGaN layer, the molar constituent content of Al is 5%~30%;
(9) after described PAlGaN current barrier layer growth finishes, the high temperature P type GaN layer that growth thickness is 100-800nm, growth temperature is 850-950 ℃, and growth time is 5-40min, and growth pressure is 100-500Torr, and V/III is than being 300-5000;
(10) after described high temperature P type GaN layer growth finishes, the P type contact layer that growth thickness is 5-20nm, growth temperature is 850-1050 ℃, and growth time is 1-10min, and growth pressure is 100-500Torr, and V/III is than being 1000-20000;
(11) after epitaxial growth finishes, the temperature of reative cell is down to 650-800 ℃, adopts pure nitrogen gas atmosphere to carry out annealing in process 2-15min, be then down to room temperature, subsequently, make single small-size chips through cleaning, deposition, photoetching and etching subsequent machining technology.
2. a kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate according to claim 1, is characterized in that: in the growth course of described epitaxial structure with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as Ga, Al, In and N source.
3. a kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate according to claim 1, is characterized in that: in the growth course of described epitaxial structure with silane (SiH
4) and two luxuriant magnesium (CP
2mg) respectively as N, P type dopant.
4. a kind of GaN base LED multi-level buffer layer growth method take Sapphire Substrate as substrate according to claim 1, is characterized in that: in the growth course of described epitaxial structure with hydrogen (H
2) or nitrogen (N
2) as carrier gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410090745.1A CN103811601B (en) | 2014-03-12 | 2014-03-12 | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410090745.1A CN103811601B (en) | 2014-03-12 | 2014-03-12 | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103811601A true CN103811601A (en) | 2014-05-21 |
CN103811601B CN103811601B (en) | 2016-08-17 |
Family
ID=50708086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410090745.1A Active CN103811601B (en) | 2014-03-12 | 2014-03-12 | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103811601B (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103972336A (en) * | 2014-05-27 | 2014-08-06 | 华延芯光(北京)科技有限公司 | Method for prolonging working life of GaN-based LED device in temperature circulation manner |
CN104409319A (en) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | Preparation method for growing high-quality GaN buffer layer on graphene substrate |
CN104465918A (en) * | 2014-10-31 | 2015-03-25 | 华灿光电(苏州)有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
CN104518059A (en) * | 2014-11-06 | 2015-04-15 | 聚灿光电科技(苏州)有限公司 | Epitaxy structure and growth method thereof based on GaN-based quantum well |
CN104701432A (en) * | 2015-03-20 | 2015-06-10 | 映瑞光电科技(上海)有限公司 | GaN-based LED epitaxial structure and preparation method thereof |
CN105679892A (en) * | 2016-03-09 | 2016-06-15 | 华灿光电(苏州)有限公司 | Epitaxial structure of light emitting diode and epitaxial growth method therefor |
CN106328780A (en) * | 2016-11-01 | 2017-01-11 | 湘能华磊光电股份有限公司 | Method for substrate epitaxial growth of luminous diode based on AlN template |
CN106374021A (en) * | 2016-12-02 | 2017-02-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method based on sapphire graphical substrate |
WO2022165895A1 (en) * | 2021-02-07 | 2022-08-11 | 厦门乾照光电股份有限公司 | Semiconductor epitaxial structure and manufacturing method therefor, and led chip |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070018187A1 (en) * | 2005-07-22 | 2007-01-25 | Samsung Electro-Mechanics Co., Ltd. | Vertical GaN-based LED and method of manfacturing the same |
JP2008103665A (en) * | 2006-09-22 | 2008-05-01 | Matsushita Electric Ind Co Ltd | Nitride semiconductor device and its manufacturing method |
CN102769078A (en) * | 2012-07-13 | 2012-11-07 | 合肥彩虹蓝光科技有限公司 | Method for manufacturing high-growth-rate LED (light-emitting diode) with P-type GaN structure |
CN103208571A (en) * | 2013-04-08 | 2013-07-17 | 合肥彩虹蓝光科技有限公司 | GaN-based LED (light emitting diode) epitaxial wafer and production method thereof |
-
2014
- 2014-03-12 CN CN201410090745.1A patent/CN103811601B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070018187A1 (en) * | 2005-07-22 | 2007-01-25 | Samsung Electro-Mechanics Co., Ltd. | Vertical GaN-based LED and method of manfacturing the same |
JP2008103665A (en) * | 2006-09-22 | 2008-05-01 | Matsushita Electric Ind Co Ltd | Nitride semiconductor device and its manufacturing method |
CN102769078A (en) * | 2012-07-13 | 2012-11-07 | 合肥彩虹蓝光科技有限公司 | Method for manufacturing high-growth-rate LED (light-emitting diode) with P-type GaN structure |
CN103208571A (en) * | 2013-04-08 | 2013-07-17 | 合肥彩虹蓝光科技有限公司 | GaN-based LED (light emitting diode) epitaxial wafer and production method thereof |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103972336A (en) * | 2014-05-27 | 2014-08-06 | 华延芯光(北京)科技有限公司 | Method for prolonging working life of GaN-based LED device in temperature circulation manner |
CN103972336B (en) * | 2014-05-27 | 2017-03-22 | 内蒙古华延芯光科技有限公司 | Method for prolonging working life of GaN-based LED device in temperature circulation manner |
CN104409319A (en) * | 2014-10-27 | 2015-03-11 | 苏州新纳晶光电有限公司 | Preparation method for growing high-quality GaN buffer layer on graphene substrate |
CN104409319B (en) * | 2014-10-27 | 2017-04-05 | 苏州新纳晶光电有限公司 | The preparation method of high-quality GaN cushion is grown on a kind of graphene-based bottom |
CN104465918A (en) * | 2014-10-31 | 2015-03-25 | 华灿光电(苏州)有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
CN104465918B (en) * | 2014-10-31 | 2017-06-27 | 华灿光电(苏州)有限公司 | A kind of LED epitaxial slice and preparation method thereof |
CN104518059A (en) * | 2014-11-06 | 2015-04-15 | 聚灿光电科技(苏州)有限公司 | Epitaxy structure and growth method thereof based on GaN-based quantum well |
CN104701432A (en) * | 2015-03-20 | 2015-06-10 | 映瑞光电科技(上海)有限公司 | GaN-based LED epitaxial structure and preparation method thereof |
CN105679892A (en) * | 2016-03-09 | 2016-06-15 | 华灿光电(苏州)有限公司 | Epitaxial structure of light emitting diode and epitaxial growth method therefor |
CN106328780A (en) * | 2016-11-01 | 2017-01-11 | 湘能华磊光电股份有限公司 | Method for substrate epitaxial growth of luminous diode based on AlN template |
CN106374021A (en) * | 2016-12-02 | 2017-02-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method based on sapphire graphical substrate |
WO2022165895A1 (en) * | 2021-02-07 | 2022-08-11 | 厦门乾照光电股份有限公司 | Semiconductor epitaxial structure and manufacturing method therefor, and led chip |
Also Published As
Publication number | Publication date |
---|---|
CN103811601B (en) | 2016-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106784210B (en) | Epitaxial wafer of light emitting diode and manufacturing method thereof | |
CN106410005B (en) | gallium nitride based L ED epitaxial wafer and growth method thereof | |
CN103811601B (en) | A kind of GaN base LED multi-level buffer layer growth method with Sapphire Substrate as substrate | |
CN102368519B (en) | A kind of method improving semiconductor diode multiple quantum well light emitting efficiency | |
CN103824909B (en) | A kind of epitaxy method improving GaN base LED luminosity | |
CN108461592B (en) | A kind of LED epitaxial slice and its manufacturing method | |
CN108110098B (en) | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof | |
CN108198921B (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
CN103730557A (en) | Light-emitting diode with novel P-type electron barrier layer structure and growth method | |
CN102881788A (en) | Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency | |
CN115188863B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
CN103730552A (en) | Epitaxial growth method for improving LED light emitting efficiency | |
CN106449915B (en) | Growth method of light-emitting diode epitaxial wafer | |
CN104576852A (en) | Stress regulation method for luminous quantum wells of GaN-based LED epitaxial structure | |
CN104051586A (en) | GaN-based light-emitting diode epitaxial structure and preparation method thereof | |
CN103227251A (en) | Growing method of GaN-based light-emitting diode extensional structure | |
CN103165777A (en) | Light emitting diode (LED) epitaxial wafer with N type insertion layer with trapezoidal structure and growth method thereof | |
CN113690350B (en) | Micro light-emitting diode epitaxial wafer and manufacturing method thereof | |
CN102867892A (en) | In-doped low-temperature growth P type GaN epitaxial method | |
CN108336198A (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
CN103811605A (en) | Epitaxial growth method for effectively improving reverse electric leakage of gallium nitride based light-emitting diode | |
CN104022197A (en) | Light-emitting diode epitaxial wafer and manufacturing method thereof | |
CN103824908A (en) | Epitaxial growth method for improving electrostatic endurance capacity of GaN-based light-emitting diode (LED) | |
CN109473514A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
CN114883460A (en) | Light emitting diode epitaxial wafer and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210308 Address after: Room 110-7, building 3, 290 Xingci 1st Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province, 315336 Patentee after: Ningbo anxinmei Semiconductor Co.,Ltd. Address before: 230012 Hefei City, Anhui, New Station Industrial Park Patentee before: HEFEI IRICO EPILIGHT TECHNOLOGY Co.,Ltd. |