CN106784210B - A kind of epitaxial wafer of light emitting diode and preparation method thereof - Google Patents
A kind of epitaxial wafer of light emitting diode and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses epitaxial wafers of a kind of light emitting diode and preparation method thereof, belong to technical field of semiconductors.The epitaxial wafer includes substrate and stacks gradually buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, the first hole injection layer, electronic barrier layer, the second hole injection layer over the substrate, first hole injection layer includes alternately stacked p-type AlInGaN layers and p-type InGaN layer, the electronic barrier layer is AlGaN layer, and second hole injection layer is the p-type GaN layer that interval is inserted into InN layers.Rich In atmosphere after the source the In decomposition being passed through when the present invention is by forming the first hole injection layer and the second hole injection layer, reduce the activation energy of Mg doping in P-type dopant, improve the hole concentration in the first hole injection layer and the second hole injection layer, the radiation recombination efficiency for improving hole and electronics in multiple quantum well layer, promotes the luminous efficiency of light emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of epitaxial wafer of light emitting diode and preparation method thereof.
Background technique
As the rise of third generation semiconductor technology and continuous maturation, semiconductor lighting are small with energy consumption, pollution-free, highlighted
The advantages such as degree, long-life, become focus concerned by people, have also driven flourishing for entire industry upper, middle and lower reaches industry.Its
Application of the middle GaN base blue-light LED chip in life is seen everywhere, and is widely used to illumination, display screen, backlight, signal
The fields such as lamp.
Chip includes epitaxial wafer and the electrode on epitaxial wafer.Epitaxial wafer generally includes substrate and is sequentially laminated on
Buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, P-type layer on substrate.Wherein, P-type layer is using Mg element as P
Type dopant, but Mg element can form H-Mg complex compound with H element during doping, need to interrupt H-Mg key by annealing
It realizes Mg atom acceptor activation, injection multiple quantum well layer in hole could be provided.However the activation energy of Mg is high, ionization rate is low, it is difficult to
High hole concentration is generated, the internal quantum efficiency of chip is limited.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of epitaxial wafer of light emitting diode and its systems
Make method.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, the epitaxial wafer include substrate, with
And stack gradually buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, the first hole injection layer, electricity over the substrate
Sub- barrier layer, the second hole injection layer, first hole injection layer include alternately stacked p-type AlInGaN layers and p-type
InGaN layer, the electronic barrier layer are p-type AlGaN layers, and second hole injection layer is the p-type GaN that interval is inserted into InN layers
Layer.
Optionally, first hole injection layer with a thickness of 30~200nm.
Optionally, second hole injection layer with a thickness of 20~200nm.
On the other hand, the embodiment of the invention provides a kind of production method of the epitaxial wafer of light emitting diode, the production
Method includes:
Grown buffer layer on substrate；
Undoped GaN layer is grown on the buffer layer；
N-type layer is grown in the undoped GaN layer；
Multiple quantum well layer is grown in the N-type layer；
One hole injection layer of growth regulation on the multiple quantum well layer, first hole injection layer includes alternately stacked
AlInGaN layers of p-type and p-type InGaN layer；
Electronic barrier layer is grown on first hole injection layer, the electronic barrier layer is AlGaN layer；
Two hole injection layer of growth regulation on the electronic barrier layer, second hole injection layer are interval insertion InN
The p-type GaN layer of layer.
Optionally, one hole injection layer of growth regulation on the multiple quantum well layer, comprising:
Circulation executes following steps m times, 2≤m≤15:
It is passed through the source Ga, the source In, the source Al, the source N and P-type dopant in first time period, grows AlInGaN layers of P type；
Stop being passed through the source Al, growing P-type InGaN layer in second time period.
Preferably, the first time period is 20~100s, and the second time period is 20~100s.
Optionally, the growth temperature of first hole injection layer is 750~850 DEG C, first hole injection layer
Growth pressure is 100~300torr.
Optionally, two hole injection layer of growth regulation on the electronic barrier layer, comprising:
Circulation executes following steps n times, 5≤n≤20:
The source Ga, the source N and P-type dopant, growth P-type GaN layer are passed through within the third period；
Stop being passed through the source Ga within the 4th period, while being passed through the source In, grows InN layers.
Preferably, the third period is 20~50s, and the 4th period is 5~15s.
Optionally, the growth temperature of second hole injection layer is 950~1050 DEG C, second hole injection layer
Growth pressure is 100~700torr.
Technical solution provided in an embodiment of the present invention has the benefit that
By setting gradually the first hole injection layer, electronic barrier layer, the second hole injection layer on multiple quantum well layer, the
One hole injection layer includes alternately stacked p-type AlInGaN layers and p-type InGaN layer, and the second hole injection layer is interval insertion
InN layers of p-type GaN layer, the rich In gas after the source the In decomposition being passed through when forming the first hole injection layer and the second hole injection layer
Atmosphere can reduce the activation energy that Mg is adulterated in P-type dopant, improve the sky in the first hole injection layer and the second hole injection layer
Cave concentration improves the radiation recombination efficiency in hole and electronics in multiple quantum well layer, promotes the luminous efficiency of light emitting diode.And
In in InN layers of p-type GaN layer is inserted at interval can improve crystal quality as surfactant, and it is empty to further function as raising
The effect of cave concentration.In addition, alternately stacked p-type AlInGaN layers and p-type InGaN layer, can effectively adjust heterostructure band,
Two-dimensional electron gas is formed, the injection efficiency in hole is improved.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of the epitaxial wafer for light emitting diode that the embodiment of the present invention one provides；
Fig. 2 is a kind of process signal of the production method of the epitaxial wafer of light emitting diode provided by Embodiment 2 of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of epitaxial wafers of light emitting diode, referring to Fig. 1, the epitaxial wafer include substrate 1, with
And be sequentially laminated on buffer layer 2 on substrate 1, undoped GaN layer 3, N-type layer 4, multiple quantum well layer 5, the first hole injection layer 6,
Electronic barrier layer 7, the second hole injection layer 8.
In the present embodiment, the first hole injection layer includes alternately stacked p-type AlInGaN layers and p-type InGaN layer, electricity
Sub- barrier layer is AlGaN layer, and the second hole injection layer is the p-type GaN layer that interval is inserted into InN layers.
Optionally, the thickness of the first hole injection layer can be 30~200nm.
Optionally, the number of plies of p-type InGaN layer is identical as AlInGaN layers of p-type of the number of plies, and the number of plies that AlInGaN layers of p-type can
Think 2~15 layers.
Optionally, the thickness of the second hole injection layer can be 20~200nm.
Optionally, p-type GaN layer can be divided into 5~20 layers by InN layers.
Optionally, the thickness of electronic barrier layer can be 30~100nm.
Specifically, substrate can be Sapphire Substrate.
Buffer layer can be AlN buffer layer, with a thickness of 15~40nm.
Undoped GaN layer may include different the first undoped GaN layer and the second undoped GaN layer of growth conditions, the
One undoped GaN layer with a thickness of 0.5~1.5 μm, the second undoped GaN layer with a thickness of 1~2 μm.
N-type layer may include the first different N-type GaN layer of growth conditions, the second N-type GaN layer, third N-type GaN layer, and
One N-type GaN layer with a thickness of 2~3 μm, the doping concentration of Si is 1E+19~2E+19atom/cm in the first N-type GaN layer3；The
Two N-type GaN layers with a thickness of 0.1~0.3 μm, the doping concentration of Si is 1E+17~2E+18atom/ in the second N-type GaN layer
cm3；Third N-type GaN layer with a thickness of 30~100nm, the doping concentration of Si is 5E+17~5E+18 in third N-type GaN layer
atom/cm3。
Multiple quantum well layer includes alternately stacked InGaN quantum well layer and GaN quantum barrier layer；The number of plies of GaN quantum barrier layer
Identical as the number of plies of InGaN quantum well layer, the number of plies of InGaN quantum well layer is 6~15 layers；InGaN quantum well layer with a thickness of
2~4nm, GaN quantum barrier layer with a thickness of 10~13nm.
Optionally, which can also include the stress release layer being arranged between N-type layer and multiple quantum well layer.Stress
Releasing layer may include alternately stacked InxGa1-xN layers and GaN layer, 0.15≤x≤0.2；GaN layers of the number of plies and InxGa1-xN
The number of plies of layer is identical, InxGa1-xN layers of the number of plies is 2~6 layers；InxGa1-xN layers with a thickness of 0.5~10nm, the thickness of GaN layer
For 20~50nm.
Optionally, which can also include the protection being arranged between multiple quantum well layer and the first hole injection layer
Layer.Protective layer may include alternately stacked AlGaN layer and AlInGaN layers；AlInGaN layers of the number of plies and the number of plies of AlGaN layer
Identical, the number of plies of AlGaN layer is 4~10 layers；AlInGaN layers of thickness is identical as the thickness of AlGaN layer, the thickness of AlGaN layer
For 1~5nm.
Optionally, which can also include the p-type contact layer that is arranged on the second hole injection layer, with a thickness of 5~
10nm。
The embodiment of the present invention on multiple quantum well layer by setting gradually the first hole injection layer, electronic barrier layer, second
Hole injection layer, the first hole injection layer include alternately stacked p-type AlInGaN layers and p-type InGaN layers, the injection of the second hole
Layer is inserted into InN layers of p-type GaN layer for interval, the source In being passed through when forming the first hole injection layer and the second hole injection layer point
Rich In atmosphere after solution can reduce the activation energy that Mg is adulterated in P-type dopant, improve the first hole injection layer and the second sky
Hole concentration in the implanted layer of cave improves the radiation recombination efficiency in hole and electronics in multiple quantum well layer, promotes light emitting diode
Luminous efficiency.And In can improve crystal quality as surfactant in the p-type GaN layer of InN layers of interval insertion, into
One step plays the role of improving hole concentration.In addition, alternately stacked p-type AlInGaN layers and p-type InGaN layer, can effectively adjust
Heterostructure band is saved, two-dimensional electron gas is formed, improves the injection efficiency in hole.
Embodiment two
The embodiment of the invention provides a kind of production methods of the epitaxial wafer of light emitting diode, referring to fig. 2, the production method
Include:
Step 201: grown buffer layer on substrate.
In the present embodiment, substrate can be Sapphire Substrate；Buffer layer can be AlN buffer layer, with a thickness of 15~
40nm。
Specifically, which may include:
Using physical vapour deposition (PVD) (English: Physical Vapor Deposition, abbreviation: PVD), technology is on substrate
Plate the AlN layer with a thickness of 15~40nm；
Substrate is placed on Metal Organic Chemical Vapor Deposition (English: Metal-organic Chemical
Vapor Depositio, referred to as: MOCVD) in reaction chamber；
The high annealing of 60~300s is carried out controlled at 1000~1050 DEG C, is formed AlN nucleus, is completed buffer layer
Growth.
Step 202: growing undoped GaN layer on the buffer layer.
In the present embodiment, undoped GaN layer may include that the first different undoped GaN layer of growth conditions and second are non-
Doped gan layer, the first undoped GaN layer with a thickness of 0.5~1.5 μm, the second undoped GaN layer with a thickness of 1~2 μm.
Specifically, which may include:
Controlled at 950~1050 DEG C, pressure is 100~600torr, is passed through TMGa, H2、N2And NH3, in buffer layer
The first undoped GaN layer that upper growth thickness is 0.5~1.5 μm；
Controlled at 1000~1200 DEG C, pressure is 100~300torr, the growth thickness in the first undoped GaN layer
For 1~2 μm of the second undoped GaN layer.
Step 203: growing N-type layer in undoped GaN layer.
In the present embodiment, N-type layer may include the first different N-type GaN layer of growth conditions, the 2nd N type GaN layer,
Three N-type GaN layers, the first N-type GaN layer with a thickness of 2~3 μm, the doping concentration of Si is 1E+19~2E+ in the first N-type GaN layer
19atom/cm3；Second N-type GaN layer with a thickness of 0.1~0.3 μm, the doping concentration of Si is 1E+17 in the second N-type GaN layer
~2E+18atom/cm3；Third N-type GaN layer with a thickness of 30~100nm, the doping concentration of Si is 5E in third N-type GaN layer
+ 17~5E+18atom/cm3。
Specifically, which may include:
Controlled at 1050~1200 DEG C, pressure is 100~300torr, is passed through TMGa, SiH4、H2、 N2And NH3,
The first N-type GaN layer that growth thickness is 2~3 μm in second undoped GaN layer, doping concentration control are 1E+19~2E+
19atom/cm3；
Controlled at 1050~1200 DEG C, pressure is 100~300torr, is passed through TMGa, SiH4、H2、 N2And NH3,
The second N-type GaN layer that growth thickness is 0.1~0.3 μm in first N-type GaN layer, doping concentration control are 1E+17~2E+
18atom/cm3；
Controlled at 800~950 DEG C, pressure is 100~400torr, is passed through TMGa, SiH4、N2And NH3, in the 2nd N
Growth thickness is the third N-type GaN layer of 30~100nm in type GaN layer, and doping concentration control is 5E+17~5E+18atom/
cm3。
Step 204: the growth stress releasing layer in N-type layer.
Specifically, which may include:
Controlled at 800~950 DEG C, pressure is 100~400torr, 2~6 layers of In of alternating growthxGa1-xN layers and 2~
6 layers of GaN layer, 0.15≤x≤0.2, InxGa1-xN layers of thickness control in 0.5~10nm, the thickness control of GaN layer 20~
50nm。
Step 205: multiple quantum well layer is grown on stress release layer.
In the present embodiment, multiple quantum well layer includes alternately stacked InGaN quantum well layer and GaN quantum barrier layer；GaN amount
The number of plies of sub- barrier layer is identical as the number of plies of InGaN quantum well layer, and the number of plies of InGaN quantum well layer is 6~15 layers；InGaN quantum
Well layer with a thickness of 2~4nm, GaN quantum barrier layer with a thickness of 10~13nm.
Specifically, which may include:
Circulation executes following steps 6~15 times:
Controlled at 800 DEG C, pressure is 100~300torr, and growth thickness is the InGaN quantum well layer of 2~4nm；
Controlled at 850~900 DEG C, pressure is 100~300torr, and growth thickness is the GaN quantum of 10~13nm
Barrier layer.
Step 206: the growth protecting layer on multiple quantum well layer.
Specifically, which may include:
Control pressure is 100~300torr, and 4~10 layers of alternating growth with a thickness of the InGaN quantum well layer of 1~5nm and 4
~10 layers of GaN quantum barrier layer with a thickness of 1~5nm.
Step 207: one hole injection layer of growth regulation on the protection layer.
In the present embodiment, the first hole injection layer includes alternately stacked p-type AlInGaN layers and p-type InGaN layer.
Optionally, the thickness of the first hole injection layer can be 30~200nm.
Specifically, which may include:
Controlled at 750~850 DEG C, pressure is 100~300torr, and circulation executes following steps m times, 2≤m≤
15:
Be passed through in first time period the source Ga (such as TMGa or TEGa), the source In (such as TMIn), the source Al (such as
TMAl), the source N (such as NH3) and P-type dopant (such as Cp2Mg), growing P-type AlInGaN layers；
Stop being passed through the source Al, growing P-type InGaN layer in second time period.
Optionally, first time period can be 20~100s, and second time period can be 20~100s.
Step 208: growing electronic barrier layer on the first hole injection layer.
In the present embodiment, electronic barrier layer is AlGaN layer.
Specifically, which may include:
Controlled at 950~1000 DEG C, pressure is 100~300torr, is passed through TMGa, N2And NH3, growing P-type AlGaN
Layer, thickness control is in 30~100nm.
Step 209: two hole injection layer of growth regulation on electronic barrier layer.
In the present embodiment, the second hole injection layer is the p-type GaN layer that interval is inserted into InN layers.
Optionally, the thickness of the second hole injection layer can be 20~200nm.
Specifically, which may include:
Controlled at 950~1050 DEG C, pressure is 100~700torr, and ring executes following steps n times, 5≤n≤20:
The source Ga, the source N and P-type dopant, growth P-type GaN layer are passed through within the third period；
Stop being passed through the source Ga within the 4th period, while being passed through the source In, grows InN layers.
Optionally, the third period can be 20~50s, and the 4th period can be 5~15s.
Step 210: the growing P-type contact layer on the second hole injection layer.
Specifically, which may include:
Controlled at 650~750 DEG C, pressure is 100~400torr, is passed through TMGa, NH3、Cp2Mg and TMIn, growth
The p-type contact layer of 5~10nm.
Step 211: Mg activation in 5~10 minutes is carried out controlled at 700~750 DEG C, under nitrogen atmosphere.
The embodiment of the present invention on multiple quantum well layer by setting gradually the first hole injection layer, electronic barrier layer, second
Hole injection layer, the first hole injection layer include alternately stacked p-type AlInGaN layers and p-type InGaN layers, the injection of the second hole
Layer is inserted into InN layers of p-type GaN layer for interval, the source In being passed through when forming the first hole injection layer and the second hole injection layer point
Rich In atmosphere after solution can reduce the activation energy that Mg is adulterated in P-type dopant, improve the first hole injection layer and the second sky
Hole concentration in the implanted layer of cave improves the radiation recombination efficiency in hole and electronics in multiple quantum well layer, promotes light emitting diode
Luminous efficiency.And In can improve crystal quality as surfactant in the p-type GaN layer of InN layers of interval insertion, into
One step plays the role of improving hole concentration.In addition, alternately stacked p-type AlInGaN layers and p-type InGaN layer, can effectively adjust
Heterostructure band is saved, two-dimensional electron gas is formed, improves the injection efficiency in hole.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of epitaxial wafer of light emitting diode, which is characterized in that the epitaxial wafer includes substrate and is sequentially laminated on described
Buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, the first hole injection layer, electronic barrier layer, the second sky on substrate
Cave implanted layer, first hole injection layer include alternately stacked p-type AlInGaN layers and p-type InGaN layer, the electronics resistance
Barrier is AlGaN layer, and second hole injection layer is the p-type GaN layer that interval is inserted into InN layers.
2. epitaxial wafer according to claim 1, which is characterized in that first hole injection layer with a thickness of 30~
200nm。
3. epitaxial wafer according to claim 1 or 2, which is characterized in that second hole injection layer with a thickness of 20~
200nm。
4. a kind of production method of the epitaxial wafer of light emitting diode, which is characterized in that the production method includes:
Grown buffer layer on substrate；
Undoped GaN layer is grown on the buffer layer；
N-type layer is grown in the undoped GaN layer；
Multiple quantum well layer is grown in the N-type layer；
One hole injection layer of growth regulation on the multiple quantum well layer, first hole injection layer include alternately stacked p-type
AlInGaN layers and p-type InGaN layer；
Electronic barrier layer is grown on first hole injection layer, the electronic barrier layer is AlGaN layer；
Two hole injection layer of growth regulation on the electronic barrier layer, second hole injection layer are the P that interval is inserted into InN layers
Type GaN layer.
5. production method according to claim 4, which is characterized in that the growth regulation on the multiple quantum well layer one is empty
Cave implanted layer, comprising:
Circulation executes following steps m times, 2≤m≤15:
It is passed through the source Ga, the source In, the source Al, the source N and P-type dopant in first time period, AlInGaN layers of growing P-type；
Stop being passed through the source Al, growing P-type InGaN layer in second time period.
6. production method according to claim 5, which is characterized in that the first time period is 20~100s, described the
Two periods were 20~100s.
7. production method according to any one of claim 4 to 6, which is characterized in that the life of first hole injection layer
Long temperature is 750~850 DEG C, and the growth pressure of first hole injection layer is 100~300torr.
8. production method according to claim 4, which is characterized in that the growth regulation on the electronic barrier layer two is empty
Cave implanted layer, comprising:
Circulation executes following steps n times, 5≤n≤20:
The source Ga, the source N and P-type dopant, growth P-type GaN layer are passed through within the third period；
Stop being passed through the source Ga within the 4th period, while being passed through the source In, grows InN layers.
9. production method according to claim 8, which is characterized in that the third period be 20~50s, the described 4th
Period is 5~15s.
10. according to the described in any item production methods of claim 4,8,9, which is characterized in that second hole injection layer
Growth temperature is 950~1050 DEG C, and the growth pressure of second hole injection layer is 100~700torr.
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| US10276746B1 (en) * | 2017-10-18 | 2019-04-30 | Bolb Inc. | Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same |
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| CN116230824B (en) * | 2023-05-08 | 2023-07-18 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101540364B (en) * | 2009-04-23 | 2011-05-11 | 厦门大学 | Nitride luminescent device and production method thereof |
| CN102969417A (en) * | 2012-11-01 | 2013-03-13 | 扬州中科半导体照明有限公司 | Green nitride light-emitting diode (LED) epitaxial wafer and growth method thereof |
| CN103474539B (en) * | 2013-09-25 | 2016-03-30 | 湘能华磊光电股份有限公司 | LED structure epitaxial growth method containing superlattice layer and structure thereof |
| CN105449051B (en) * | 2014-08-25 | 2018-03-27 | 东莞市中镓半导体科技有限公司 | One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate |
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