CN108336198A - A kind of LED epitaxial slice and its manufacturing method - Google Patents
A kind of LED epitaxial slice and its manufacturing method Download PDFInfo
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- CN108336198A CN108336198A CN201711429144.9A CN201711429144A CN108336198A CN 108336198 A CN108336198 A CN 108336198A CN 201711429144 A CN201711429144 A CN 201711429144A CN 108336198 A CN108336198 A CN 108336198A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a kind of LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.The multiple quantum well layer of LED epitaxial slice includes the quantum well layer and quantum barrier layer of multiple period alternating growths, in multiple quantum well layer near 1~5 quantum barrier layer of insert layer be the first quantum well layer, doped with Mg in first quantum well layer, and the doping concentration of Mg is 1017~1019/cm3, Mg can improve the transfer ability in hole, while can also draw high the conduction level in multiple quantum well layer at P-type layer, stop that electronics is migrated to P-type layer, the effective distribution for improving electrons and holes, improves the combined efficiency of electrons and holes, to improve the luminous efficiency of LED.The thickness of each first quantum well layer is 3~20nm, and the thickness of electronic barrier layer is 0~30nm.Since the concentration in hole increases, it is possible to reduce the blocking to electronics reduces the influence for hindering hole injection caused by introducing electronic barrier layer so as to reduce the thickness of electronic barrier layer.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and its manufacturing method.
Background technology
LED (Light Emitting Diode, light emitting diode) is used as great influence in information photoelectron new industry
The new product of power has the characteristics that small, service life is long, various colors are colorful, low energy consumption, is widely used in illumination, shows
The fields such as display screen, signal lamp, backlight, toy.
Existing LED includes the epitaxial layer of substrate and setting on substrate, and epitaxial layer includes being cascading on substrate
Buffer layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronic barrier layer, high temperature P-type layer and p-type contact layer.
Wherein, the thickness of electronic barrier layer is 40~100nm.N-type layer and P-type layer mostly use GaN material and are made, electronics and P in N-type layer
Hole in type layer is in active layer recombination luminescence.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems：
Since the mobility of the electrons and holes in GaN material differs nearly an order of magnitude, most LED components can be in volume
Electronic barrier layer is introduced between sub- trap active layer and P-type layer to stop electron transfer, but due to the polarization of storeroom and stress
Effect introduces electronic barrier layer and will produce a high Valence-band Offsets obstruction hole injection, in addition to this, most multiple quantum wells
Quantum barrier layer in layer is intrinsic barrier layer, and the valence-band level of intrinsic barrier layer is apparently higher than the energy band of the quantum well layer of doping, hole
It equally can not effective mobility.
Invention content
Transfer ability in order to solve the problems, such as hole in the prior art is low, and an embodiment of the present invention provides one kind luminous two
Pole pipe epitaxial wafer and its manufacturing method.The technical solution is as follows：
On the one hand, the present invention provides a kind of LED epitaxial slice, the LED epitaxial slice include substrate,
And stack gradually buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronics over the substrate
Barrier layer, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include the quantum well layer and amount of multiple period alternating growths
Sub- barrier layer,
Near 1~5 quantum barrier layer of the insert layer it is the first quantum well layer in the multiple quantum well layer, described the
Doped with Mg in one quantum well layer, and the doping concentration of Mg is 1017~1019/cm3, the thickness of each first quantum well layer
Degree is 3~20nm, and the thickness of the electronic barrier layer is 0~30nm.
Further, the insert layer is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in the insert layer17~
1019/cm3。
Further, it is the first quantum well layer near 3 quantum barrier layers of the insert layer in the multiple quantum well layer,
The thickness of 3 first quantum well layers is 12nm, and the thickness of the electronic barrier layer is 20nm.
Further, the electronic barrier layer is AlGaN layer or the electronic barrier layer is AlGaN/GaN, AlGaN/
InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
Further, it is the first quantum well layer near 3 quantum barrier layers of the insert layer in the multiple quantum well layer,
According to apart from the insert layer by the thickness as far as close direction, 3 first quantum well layers be followed successively by 8nm, 16nm and
12nm。
On the other hand, the present invention provides a kind of manufacturing method of LED epitaxial slice, the manufacturing method includes：
One substrate is provided；
Grown buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronics resistance successively on substrate
Barrier, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include the quantum well layer and quantum of multiple period alternating growths
Barrier layer, which is characterized in that
Grown buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronics resistance successively on substrate
Barrier, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include the quantum well layer and quantum of multiple period alternating growths
Barrier layer near 1~5 quantum barrier layer of the insert layer is the first quantum well layer in the multiple quantum well layer, described first
Doped with Mg in quantum well layer, and the doping concentration of Mg is 1017~1019/cm3, the thickness of each first quantum well layer
Thickness for 3~20nm, the electronic barrier layer is 0~30nm.
Further, the insert layer is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in the insert layer17~
1019/cm3。
Further, it is the first quantum well layer near 3 quantum barrier layers of the insert layer in the multiple quantum well layer,
The thickness of 3 first quantum well layers is 12nm, and the thickness of the electronic barrier layer is 20nm.
Further, the electronic barrier layer is AlGaN layer or the electronic barrier layer is AlGaN/GaN, AlGaN/
InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
Further, it is the first quantum well layer near 3 quantum barrier layers of the insert layer in the multiple quantum well layer,
According to apart from the insert layer by the thickness as far as close direction, 3 first quantum well layers be followed successively by 8nm, 16nm and
12nm。
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By adulterating Mg, and the doping of Mg in 1~5 quantum barrier layer of electronic barrier layer in multiple quantum well layer
A concentration of 1017~1019/cm3, the transfer ability in hole can be improved by mixing a small amount of Mg, while can also draw high multiple quantum wells
Conduction level in layer at P-type layer, blocking electronics are migrated to P-type layer, improve effective distribution of electrons and holes, improve electricity
The combined efficiency of son and hole, to improve the luminous efficiency of LED.And since the concentration in hole increases, need the electronics stopped
Quantity is reduced, so as to reduce the thickness of electronic barrier layer so that the thickness of electronic barrier layer is 0~30nm, with existing skill
The thickness of electronic barrier layer is that 40~100nm is compared in art, and the thickness of electronic barrier layer greatly reduces in the present invention, it might even be possible to
Electronic barrier layer is removed, not only reduces the influence for hindering hole injection caused by introducing electronic barrier layer, and substantially reduce
LED integral thickness.And in multiple quantum well layer near the thickness of 1~5 quantum barrier layer of electronic barrier layer be respectively 3~
20nm can adjust electronics by adjusting the thickness of 1~5 quantum barrier layer in multiple quantum well layer near electronic barrier layer
Distribution in multiple quantum well layer, to improve the recombination luminescence efficiency of electrons and holes.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of flow chart of the manufacturing method of LED epitaxial slice provided in an embodiment of the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of LED epitaxial slice, Fig. 1 is a kind of hair provided in an embodiment of the present invention
The structural schematic diagram of optical diode epitaxial wafer, as shown in Figure 1, the LED epitaxial slice includes substrate 1 and stacks gradually
In the buffer layer 2 of substrate 1, GaN layer 3, N-type layer 4, multiple quantum well layer 5, insert layer 6, low temperature P-type layer 7, electronic barrier layer 8, height
Warm P-type layer 9, p-type contact layer 10.Multiple quantum well layer 5 includes the quantum well layer 51 and quantum barrier layer 52 of multiple period alternating growths.
In multiple quantum well layer 5 near 1~5 quantum barrier layer of insert layer 6 be the first quantum well layer 53 namely Multiple-quantum
Well layer 5 includes 1~5 the first quantum well layer 53, and doped with Mg in each first quantum well layer 53, and the doping concentration of Mg is
1017~1019/cm3, the thickness of each first quantum well layer 53 is 3~20nm, and the thickness of electronic barrier layer 8 is 0~30nm.
The embodiment of the present invention by multiple quantum well layer close to electronic barrier layer 1~5 quantum barrier layer in adulterate Mg,
And the doping concentration of Mg is 1017~1019/cm3, the transfer ability in hole can be improved by mixing a small amount of Mg, while can also be drawn
Conduction level in high multiple quantum well layer at P-type layer, blocking electronics are migrated to P-type layer, improve the effective of electrons and holes
Distribution, improves the combined efficiency of electrons and holes, to improve the luminous efficiency of LED.And it since the concentration in hole increases, needs
The electron amount of blocking is reduced, so as to reduce the thickness of electronic barrier layer so that and the thickness of electronic barrier layer is 0~
30nm, with the thickness of electronic barrier layer in the prior art be 40~100nm compared with, the present invention in electronic barrier layer thickness significantly
Reduce, it might even be possible to electronic barrier layer is removed, the influence for hindering hole injection caused by introducing electronic barrier layer is not only reduced,
And greatly reduce LED integral thickness.And close to the thickness of 1~5 quantum barrier layer of electronic barrier layer in multiple quantum well layer
Respectively 3~20nm can be adjusted by adjusting the thickness of 1~5 quantum barrier layer in multiple quantum well layer close to electronic barrier layer
Distribution of the whole electronics in multiple quantum well layer, to improve the recombination luminescence efficiency of electrons and holes.
Further, insert layer 6 is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in insert layer 617~1019/cm3。
By mixing a small amount of Mg in insert layer 6, Mg can improve the injection in hole, while can also draw high the conduction band of insert layer 6
Energy level, blocking electronics are migrated to low temperature P-type layer 7, improve the combined efficiency of electrons and holes.
Preferably, the thickness of insert layer 6 is 3~20nm.If the thickness of insert layer 6 is less than 3nm, blocking electricity can not be played
The effect of son can influence being efficiently injected into for hole if the thickness of insert layer 6 is higher than 20nm.
In the present embodiment, the thickness of each first quantum well layer 53 can be set as identical according to actual conditions, or not
Together.By the thickness for adjusting each first quantum well layer 53, you can the distribution for changing the carrier in multiple quantum well layer 5, to
Improve the combined efficiency of electrons and holes.
Wherein, multiple quantum well layer 5 can be the InGaN quantum well layers and GaN quantum for including 8~10 period alternating growths
Barrier layer, wherein the thickness of each InGaN quantum well layers is 2.5nm, the thickness of each GaN quantum barrier layers is 12nm.
Optionally, as shown in Figure 1, in multiple quantum well layer 5 near 3 quantum barrier layers of insert layer 6 be the first Quantum Well
Layer 53, that is, multiple quantum well layer 5 includes 3 the first quantum well layers, the thickness of 3 the first quantum well layers 53 is 12nm, 3
Mixed with Mg in first quantum well layer 53, and the doping concentration of Mg is 1017~1019/cm3.The thickness of electronic barrier layer 8 is at this time
20nm.Thickness by the way that 3 the first quantum well layers 53 are arranged coordinates the doping concentration of Mg in 3 the first quantum well layers 53, can be with
So that the thickness of electronic barrier layer 8 is 20nm, for the thickness of middle electronic barrier layer 8 is 40~100nm compared with the prior art,
The thickness of electronic barrier layer 8 greatly reduces, and the influence of hole injection is hindered caused by reduce introducing electronic barrier layer 8,
Reduce the integral thickness of LED.
At this point, the thickness of 3 the first quantum well layers 53 is 12nm, during growing 3 the first quantum well layer 53
Without changing the thickness of each first quantum well layer 53, it is convenient for the making of light emitting diode.
Optionally, electronic barrier layer 8 can be AlGaN layer or electronic barrier layer 8 be AlGaN/GaN, AlGaN/InGaN,
AlInGaN/GaN or AlGaN/InAlN superlattice structures.
Preferably, it is the first quantum well layer 53, Ye Jiduo near 3 quantum barrier layers of insert layer 6 in multiple quantum well layer 5
Quantum well layer 5 includes 3 the first quantum well layers, according to apart from insert layer by as far as close direction, 3 the first quantum well layers 53
Thickness is followed successively by 8nm, 16nm and 12nm namely 3 the first quantum well layers 53,1 first quantum nearest apart from insert layer 6
The thickness of well layer 53 is 8nm, and the thickness of 1 first quantum well layer 53 farthest apart from insert layer 6 is 12nm, interjacent 1
The thickness of a first quantum well layer 53 is 16nm.Near 2 the first Quantum Well of insert layer 6 in 3 the first quantum well layers 53
Mixed with Mg in layer 53, the doping concentration of Mg is 1017~1019/cm3.The thickness of electronic barrier layer 8 can be 0 at this time.Namely the hair
Optical diode epitaxial wafer can be not provided with electronic barrier layer 8, by adjusting the thickness of the first quantum well layer, coordinate the first Quantum Well
The doping concentration of Mg in layer hinders the influence of hole injection, greatly reduces caused by eliminate introducing electronic barrier layer 8
LED integral thickness.
Optionally, substrate 1 can be Sapphire Substrate, thickness 630-650um.Buffer layer 2 can be ALN buffer layers,
Thickness is 5~40nm.The thickness of GaN layer 3 is 1 μm, and N-type layer 4 is to mix the GaN layer of Si, thickness 2um.
Optionally, low temperature P-type layer 7 is GaN layer, and growth thickness 30nm, high temperature P-type layer 9 is GaN layer, thickness 20nm.
P-type contact layer 10 is the GaN layer of heavy doping Mg, thickness 1.5nm.
Embodiment two
An embodiment of the present invention provides a kind of manufacturing method of LED epitaxial slice, it is suitable for what embodiment one provided
A kind of LED epitaxial slice, Fig. 2 are a kind of manufacturing methods of LED epitaxial slice provided in an embodiment of the present invention
Flow chart, as shown in Fig. 2, the manufacturing method includes：
Step 201 pre-processes substrate.
Optionally, substrate is sapphire, and thickness is 630~650um.
In the present embodiment, using Veeco K465i or C4MOCVD (Metal Organic Chemical Vapor
Deposition, metallo-organic compound chemical gaseous phase deposition) equipment realize LED growing method.Using high-purity H2(hydrogen)
Or high-purity N2(nitrogen) or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the sources N, trimethyl gallium (TMGa)
And triethyl-gallium (TEGa) is used as gallium source, trimethyl indium (TMIn) that indium source, silane (SiH4) is used as to be used as N type dopant, front three
Base aluminium (TMAl) is used as silicon source, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.Chamber pressure is 100~600torr.
Specifically, which includes：
In a hydrogen atmosphere, 5~6min of high-temperature process substrate.Wherein, reaction chamber temperature is 1000~1100 DEG C, reative cell
Pressure is controlled in 200~500torr.
Step 202, on substrate grown buffer layer.
Specifically, Sapphire Substrate is sputtered at PVD (Physical Vapor Deposition, physical vapor deposition)
The ALN buffer layers of one layer of 5~40nm thickness of sputtering in stove.
Step 203 grows GaN layer on the buffer layer.
After buffer growth, there is the substrate of ALN buffer layers to be put into MOCVD device sputtering, room temperature will be reacted
Degree is increased to 1040 °, and growth thickness is the GaN layer that 1-2 μm of high temperature undopes.
Step 204 grows N-type layer in GaN layer.
In the present embodiment, N-type layer is to mix the GaN layer of Si, and thickness is 2 μm.When growing N-type layer, reaction chamber temperature is
1000~1100 DEG C, chamber pressure is controlled in 200~300torr.
Step 205 grows multiple quantum well layer in N-type layer.
It in the present embodiment, can first growth stress releasing layer before growth multiple quantum well layer.
Specifically, stress release layer includes the InGaN well layer and GaN barrier layer of 3 period alternating growths, wherein InGaN traps
The thickness of layer is 2nm, and growth temperature is 850~900 DEG C, growth pressure 250torr.The thickness of GaN barrier layer is 30~50nm,
Growth temperature is 850~900 DEG C, growth pressure 250torr.
Stress release layer further includes the InGaN well layer and GaN barrier layer of 6 period alternating growths, the wherein thickness of InGaN well layer
Degree is 2nm, and growth temperature is 800~850 DEG C, growth pressure 250torr.The thickness of GaN barrier layer is 10~20nm, growth temperature
Degree is 800~850 DEG C, growth pressure 250torr.
Since multiple quantum well layer includes InGaN quantum well layers and GaN quantum barrier layers, high component is grown in GaN material
InGaN quantum well layers, higher lattice mismatch can be faced, to influence the crystal quality of multiple quantum well layer, by growing
Growth stress releasing layer before multiple quantum well layer can make lattice relaxation to the relatively more suitable high component InGaN quantum well layers of growth
State.
Specifically, multiple quantum well layer is grown after having grown stress release layer, multiple quantum well layer includes 8-10 period
The InGaN quantum well layers and GaN quantum barrier layers of alternating growth, the wherein thickness of InGaN quantum well layers are 2.5nm, growth temperature
It is 780~820 DEG C, growth pressure 250torr.The thickness of GaN quantum barrier layers is 12nm, and growth temperature is 800~900 DEG C,
Growth pressure is 250torr.When growth GaN quantum barrier layers are near 3 quantum barrier layers of insert layer, 3 quantum barrier layers
It is the first quantum well layer, the thickness of 3 the first quantum well layers is 12nm, and mixed with Mg, Mg in 3 the first quantum well layers
Doping concentration be 1017~1019/cm3.By adjusting the thickness of the first quantum well layer, Mg's mixes in the first quantum well layer of cooperation
Miscellaneous concentration hinders the influence of hole injection caused by eliminate introducing electronic barrier layer, it is whole thick to greatly reduce LED
Degree.
At this point, the thickness of 3 the first quantum well layers is 12nm, it is not necessarily to during growing 3 the first quantum well layers
Change the thickness of each first quantum well layer, is convenient for the making of light emitting diode.
Step 206 grows insert layer in multiple quantum well active layer.
In the present embodiment, insert layer is to mix the AlGaN layer of Mg, and the doping concentration of Mg is 10 in insert layer17~1019/
cm3.Insertion layer thickness is 3~20nm.When growing insert layer, growth temperature is 800~900 DEG C, and growth pressure is
250torr。
Step 207, the growing low temperature P-type layer in insert layer.
Optionally, low temperature P-type layer is GaN layer, thickness 30nm.Growth temperature is 700~900 DEG C, growth pressure 150
~250torr.
Step 208 grows electronic barrier layer in low temperature P-type layer.
Optionally, electronic barrier layer is AlGaN layer, thickness 20nm.Growth temperature is 900~1000 DEG C, growth pressure
For 100~600torr.
Step 209 grows high temperature P-type layer on electronic barrier layer.
Optionally, high temperature P-type layer is GaN layer, thickness 20nm.Growth temperature be 980 DEG C, growth pressure be 100~
600torr。
Step 210, the growing P-type contact layer in high temperature P-type layer.
Optionally, p-type contact layer is the GaN layer of heavy doping Mg, thickness 1.5nm.Growth temperature is 700~800 DEG C, raw
Long pressure is 300~600torr.
After the growth for terminating gallium nitride based LED epitaxial slice, the temperature of reative cell is down to 800 DEG C, pure
Nitrogen atmosphere carries out annealing 10min, is then down to room temperature, terminates epitaxy technique growth.
Embodiment three
An embodiment of the present invention provides a kind of manufacturing methods of gallium nitride based LED epitaxial slice, in the present embodiment
In, multiple quantum well layer includes the InGaN quantum well layers and GaN quantum barrier layers of 8-10 period alternating growth, wherein InGaN quantum
The thickness of well layer is 2.5nm, and growth temperature is 780~820 DEG C, growth pressure 250torr.The thickness of GaN quantum barrier layers is
12nm, growth temperature are 800~900 DEG C, growth pressure 250torr.In growth GaN quantum barrier layers near insert layer
When 3 quantum barrier layers, 3 quantum barrier layers are the first quantum well layer, according to apart from insert layer by as far as close direction, 3
The thickness of one quantum well layer is followed successively by 8nm, 16nm and 12nm, and mixed with Mg in 3 the first quantum well layers, the doping concentration of Mg is
1017~1019/cm3.The thickness of electronic barrier layer can be 0 at this time, namely can not be given birth to when making LED epitaxial slice
Long electronic barrier layer coordinates the doping concentration of Mg in the first quantum well layer, to disappear by adjusting the thickness of the first quantum well layer
The influence that hole injection is hindered caused by addition to introducing electronic barrier layer, greatly reduces LED integral thickness.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the lining
Buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronic barrier layer, high temperature P-type layer on bottom and P
Type contact layer, the multiple quantum well layer include the quantum well layer and quantum barrier layer of multiple period alternating growths, which is characterized in that
In the multiple quantum well layer near 1~5 quantum barrier layer of the insert layer be the first quantum well layer, first amount
Doped with Mg in sub- well layer, and the doping concentration of Mg is 1017~1019/cm3, the thickness of each first quantum well layer is 3
The thickness of~20nm, the electronic barrier layer are 0~30nm.
2. LED epitaxial slice according to claim 1, which is characterized in that the insert layer is to mix the AlGaN of Mg
Layer, the doping concentration of Mg is 10 in the insert layer17~1019/cm3。
3. LED epitaxial slice according to claim 1 or 2, which is characterized in that in the multiple quantum well layer near
3 quantum barrier layers of the nearly insert layer are the first quantum well layer, and the thickness of 3 first quantum well layers is 12nm, institute
The thickness for stating electronic barrier layer is 20nm.
4. LED epitaxial slice according to claim 3, which is characterized in that the electronic barrier layer is AlGaN layer,
Or the electronic barrier layer is AlGaN/GaN, AlGaN/InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
5. LED epitaxial slice according to claim 1 or 2, which is characterized in that in the multiple quantum well layer near
3 quantum barrier layers of the nearly insert layer are the first quantum well layer, according to apart from the insert layer by as far as close direction, 3
The thickness of first quantum well layer is followed successively by 8nm, 16nm and 12nm.
6. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes：
One substrate is provided；
Grown buffer layer, GaN layer, N-type layer, multiple quantum well layer, insert layer, low temperature P-type layer, electronic blocking successively on substrate
Layer, high temperature P-type layer and p-type contact layer, the multiple quantum well layer include that the quantum well layer of multiple period alternating growths and quantum are built
Layer near 1~5 quantum barrier layer of the insert layer is the first quantum well layer, first amount in the multiple quantum well layer
Doped with Mg in sub- well layer, and the doping concentration of Mg is 1017~1019/cm3, the thickness of each first quantum well layer is 3
The thickness of~20nm, the electronic barrier layer are 0~30nm.
7. manufacturing method according to claim 6, which is characterized in that the insert layer is to mix the AlGaN layer of Mg, described to insert
The doping concentration for entering Mg in layer is 1017~1019/cm3。
8. the manufacturing method described according to claim 6 or 7, which is characterized in that inserted near described in the multiple quantum well layer
3 quantum barrier layers for entering layer are the first quantum well layer, and the thickness of 3 first quantum well layers is 12nm, the electronics resistance
The thickness of barrier is 20nm.
9. manufacturing method according to claim 8, which is characterized in that the electronic barrier layer is AlGaN layer or the electricity
Sub- barrier layer is AlGaN/GaN, AlGaN/InGaN, AlInGaN/GaN or AlGaN/InAlN superlattice structure.
10. manufacturing method according to claim 9, which is characterized in that near the insertion in the multiple quantum well layer
Layer 3 quantum barrier layers be the first quantum well layer, according to apart from the insert layer by as far as close direction, 3 first amounts
The thickness of sub- well layer is followed successively by 8nm, 16nm and 12nm.
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| CN109473525A (en) * | 2018-10-31 | 2019-03-15 | 华灿光电(苏州）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN110783432A (en) * | 2019-11-04 | 2020-02-11 | 马鞍山杰生半导体有限公司 | Ultraviolet LED epitaxial wafer and preparation method thereof |
| CN111223764A (en) * | 2020-03-18 | 2020-06-02 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving radiation recombination efficiency |
| CN111540814A (en) * | 2020-05-09 | 2020-08-14 | 湘能华磊光电股份有限公司 | LED epitaxial growth method for improving quantum efficiency |
| CN113013303A (en) * | 2021-02-02 | 2021-06-22 | 东莞理工学院 | Ultraviolet light-emitting diode and preparation method and application thereof |
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| CN114068778A (en) * | 2022-01-18 | 2022-02-18 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip, UVB chip |
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