CN109473525A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
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- CN109473525A CN109473525A CN201811287249.XA CN201811287249A CN109473525A CN 109473525 A CN109473525 A CN 109473525A CN 201811287249 A CN201811287249 A CN 201811287249A CN 109473525 A CN109473525 A CN 109473525A
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes substrate, n type semiconductor layer, active layer and p type semiconductor layer, and the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate；The active layer includes the multiple periodic structures stacked gradually, and each periodic structure includes that the Quantum Well stacked gradually and quantum are built；Inserted with multiple composite constructions in the quantum base, each composite construction includes the gallium nitride layer of the gallium nitride layer of the p-type doping stacked gradually, undoped aluminum gallium nitride and n-type doping.The present invention in quantum barrier layer by being inserted into multiple composite constructions, each composite construction includes the gallium nitride layer of the gallium nitride layer of the p-type doping stacked gradually, undoped aluminum gallium nitride and n-type doping, good two-dimensional electron gas can be formed, the extension of electric current is increased.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED is widely paid close attention to because having many advantages, such as energy conservation and environmental protection, high reliablity, long service life, is being carried on the back in recent years
Scape light source and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.Since domestic lighting lays particular emphasis on product
Power and energy saving and service life, therefore reduce LED series resistance and improve LED antistatic effect seem particularly critical.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer,
Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor
Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for
The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Electrode material can absorb the light of active layer sending, therefore electrode would be normally located at n type semiconductor layer and p-type half
On the partial region of conductor layer, so that the light that active layer issues can transmit away from the region of not set electrode.And current-carrying
The ability extending transversely of sub (including electrons and holes) in a semiconductor material is weaker, therefore the load of usually electrode settings area
Stream injection active layer carries out recombination luminescence, and the active layer of not set electrode zone is due to lacking carrier without by abundant benefit
With causing the combined efficiency of electrons and holes in active layer lower, the luminous efficiency for ultimately causing LED is lower.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
There is the ability extending transversely of technology carrier in a semiconductor material weaker, leads to the combined efficiency of electrons and holes in active layer
Lower problem.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, n type semiconductor layer, active layer and p type semiconductor layer, and the n type semiconductor layer described has
Active layer and the p type semiconductor layer stack gradually over the substrate；The active layer includes the knot of multiple periods stacked gradually
Structure, each periodic structure include that the Quantum Well stacked gradually and quantum are built；Inserted with multiple composite junctions in the quantum base
Structure, each composite construction include that gallium nitride layer, undoped aluminum gallium nitride and the N-type of the p-type doping stacked gradually are mixed
Miscellaneous gallium nitride layer.
Optionally, the gallium nitride layer of the n-type doping is using germanium as N type dopant.
Optionally, the doping concentration of germanium is 5*10 in the gallium nitride layer of the n-type doping16/cm3~6*1017/cm3。
Optionally, the doping concentration of P-type dopant is 5*10 in the gallium nitride layer of the p-type doping15/cm3~6*1017/
cm3。
Optionally, the content of aluminium component is 0.04~0.5 in the undoped aluminum gallium nitride.
Optionally, the quantity of the composite construction is 2~10.
Optionally, the composite construction with a thickness of 0.5nm~8nm.
On the other hand, the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice, institutes
Stating production method includes:
One substrate is provided；
N type semiconductor layer, active layer and p type semiconductor layer are sequentially formed over the substrate；
Wherein, the active layer includes the multiple periodic structures stacked gradually, and each periodic structure includes successively layer
Folded Quantum Well and quantum are built；Inserted with multiple composite constructions in the quantum base, each composite construction includes successively layer
The gallium nitride layer of gallium nitride layer, undoped aluminum gallium nitride and n-type doping that folded p-type is adulterated.
Optionally, the growth temperature of the composite construction is 850 DEG C~959 DEG C.
Optionally, the growth pressure of the composite construction is 100torr~500torr.
Technical solution provided in an embodiment of the present invention has the benefit that
By being inserted into multiple composite constructions in quantum barrier layer, each composite construction includes that the p-type stacked gradually is adulterated
The potential barrier of the gallium nitride layer of gallium nitride layer, undoped aluminum gallium nitride and n-type doping, undoped aluminum gallium nitride is higher, P
Two-dimensional hole gas can be formed between the gallium nitride layer and undoped aluminum gallium nitride of type doping, hole can be played well
The effect of sprawling, while two-dimensional electron gas can be formed between the gallium nitride layer of n-type doping and undoped aluminum gallium nitride, it is right
Electronics can play the role of good sprawl.Multiple composite constructions stack gradually, and can carry out to the carrier of injection active layer
Sufficiently extension improves the combined efficiency of electrons and holes in active layer, the final luminous efficiency for improving LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of active layer provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram that quantum provided in an embodiment of the present invention is built；
Fig. 4 is a kind of process of the preparation method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, n type semiconductor layer 20, active layer 30 and p type semiconductor layer 40, n type semiconductor layer 20, active layer 30 and p-type
Semiconductor layer 40 is sequentially laminated on substrate 10.
Fig. 2 is the structural schematic diagram of active layer provided in an embodiment of the present invention.Referring to fig. 2, active layer 30 includes multiple weeks
Phase structure 31, each periodic structure 31 include that the Quantum Well 32 stacked gradually and quantum build 33.
Fig. 3 is the structural schematic diagram that quantum provided in an embodiment of the present invention is built.Referring to Fig. 3, quantum is built in 33 inserted with more
A composite construction 34, each composite construction 34 include gallium nitride layer 35, the undoped aluminium gallium nitride alloy of the p-type doping stacked gradually
The gallium nitride layer 37 of layer 36 and n-type doping.
The embodiment of the present invention includes stacking gradually by being inserted into multiple composite constructions, each composite construction in quantum barrier layer
P-type doping gallium nitride layer, undoped aluminum gallium nitride and n-type doping gallium nitride layer, undoped aluminum gallium nitride
Potential barrier it is higher, p-type doping gallium nitride layer and undoped aluminum gallium nitride between can form two-dimensional hole gas, to hole
Can play the role of it is good sprawl, while can be formed between the gallium nitride layer of n-type doping and undoped aluminum gallium nitride
Two-dimensional electron gas can play the role of good sprawl to electronics.Multiple composite constructions stack gradually, can be to injection active layer
Carrier sufficiently extended, improve the combined efficiency of electrons and holes in active layer, the final luminous efficiency for improving LED.
Optionally, the gallium nitride layer 37 of n-type doping can be conducive to keep preferable crystalline substance using germanium as N type dopant
Body structure, and electron mobility is high, is conducive to carrier injection.
Preferably, the doping concentration of germanium can be 5*10 in the gallium nitride layer 37 of n-type doping16/cm3~6*1017/cm3.Such as
The doping concentration of germanium is less than 5*10 in the gallium nitride layer of fruit n-type doping16/cm3, then may be due in the gallium nitride layer of n-type doping
The doping concentration of germanium is lower and causes series resistance higher；If the doping concentration of germanium is greater than 6* in the gallium nitride layer of n-type doping
1017/cm3, then electronics overflow may be caused since the doping concentration of germanium in the gallium nitride layer of n-type doping is higher.
Optionally, the doping concentration of P-type dopant can be 5*10 in the gallium nitride layer 35 of p-type doping15/cm3~6*
1017/cm3.If the doping concentration of P-type dopant is less than 5*10 in the gallium nitride layer of p-type doping15/cm3, then may be due to p-type
The doping concentration of P-type dopant is lower and can not effectively facilitate the extending transversely of hole in the gallium nitride layer of doping；If p-type is mixed
The doping concentration of P-type dopant is greater than in miscellaneous gallium nitride layer, then P-type dopant in the gallium nitride layer that may be adulterated due to p-type
Doping concentration it is higher and influence the crystal quality of active layer.
Optionally, the content of aluminium component can be 0.04~0.5 in undoped aluminum gallium nitride 36.If undoped
The content of aluminium component is less than 0.04 in aluminum gallium nitride, then may due to aluminium component in undoped aluminum gallium nitride content compared with
It is low and the extending transversely of carrier can not be effectively facilitated；If the content of aluminium component is greater than 0.5 in undoped aluminum gallium nitride,
Then the crystal quality of active layer may be influenced since the content of aluminium component in undoped aluminum gallium nitride is higher.
Optionally, the quantity of composite construction 34 can be 2~10.If the quantity of composite construction, can less than 2
Can due to composite construction negligible amounts and the extending transversely of carrier can not be effectively facilitated；If the quantity of composite construction is greater than
10, then complex process may be caused since the quantity of composite construction is more, increase production cost.
Optionally, the thickness of composite construction can be 0.5nm~8nm.If the thickness of composite construction is less than 0.5nm,
The extending transversely of carrier may can not be effectively facilitated since composite construction is relatively thin；If the thickness of composite construction is greater than 8nm,
Then the Lattice Matching in active layer may be influenced since composite construction is thicker, reduce the crystal quality of active layer.
Specifically, the thickness of the gallium nitride layer 37 of n-type doping can be 0.2nm~5nm, undoped aluminum gallium nitride 36
Thickness can be 0.1nm~2nm, the thickness of gallium nitride layer 35 of p-type doping can be 0.2nm~5nm.
In the present embodiment, the material of Quantum Well 32 can use InGaN (InGaN), such as InxGa1-xN, 0 < x <
1；The material that quantum builds 33 can use gallium nitride.
Optionally, the thickness of Quantum Well 32 can be 2.5nm~3.5nm, preferably 3nm；The thickness that quantum builds 33 can be with
For 9nm~20nm, preferably 15nm；The quantity of periodic structure 31 can be 5~15, preferably 10.
Specifically, the material of substrate 10 can use sapphire (main material is aluminum oxide), as crystal orientation is
[0001] sapphire.The material of n type semiconductor layer 20 can use the gallium nitride of n-type doping (such as silicon).P type semiconductor layer 40
Material can using p-type doping (such as magnesium) gallium nitride.
Further, the thickness of n type semiconductor layer 20 can be 1 μm~5 μm, preferably 3 μm；N in n type semiconductor layer 20
The doping concentration of type dopant can be 1018cm-3~1019cm-3, preferably 5*1018cm-3.The thickness of p type semiconductor layer 40 can
Think 100nm~800nm, preferably 450nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 4018/cm3
~1020/cm3, preferably 1019/cm3。
In practical applications, it can be equipped with graphical silicon dioxide layer on substrate 10, on the one hand reduce GaN epitaxy material
On the other hand dislocation density changes the shooting angle of light, improves the extraction efficiency of light.Specifically, it can first be served as a contrast in sapphire
Layer of silicon dioxide material is laid on bottom；Form the photoresist of certain figure on earth silicon material using photoetching technique again；
Then the earth silicon material of not photoresist overlay, the earth silicon material formation figure left are removed using dry etching technology
Shape silicon dioxide layer；Finally remove photoresist.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include buffer layer 51, buffer layer
51 are arranged between substrate 10 and n type semiconductor layer 20, are answered with alleviate that lattice mismatch between substrate material and gallium nitride generates
Power and defect, and nuclearing centre is provided for gallium nitride material epitaxial growth.
Specifically, the material of buffer layer 51 can use gallium nitride.
Further, the thickness of buffer layer 51 can be 15nm~35nm, preferably 25nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
52, undoped gallium nitride layer 52 is arranged between buffer layer 51 and n type semiconductor layer 20, further to alleviate substrate material and nitrogen
Change the stress and defect that lattice mismatch generates between gallium, provides crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of undoped gallium nitride layer 52 can be 1 μm~5 μm, preferably 3 μm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 61, electricity
Sub- barrier layer 61 is arranged between active layer 30 and p type semiconductor layer 40, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 61 can be using the aluminium gallium nitride alloy of p-type doping, such as AlyGa1-yN, 0.1 < y
< 0.5.
Further, the thickness of electronic barrier layer 61 can be 50nm~150nm, preferably 100nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 62, low temperature
P-type layer 62 is arranged between active layer 30 and electronic barrier layer 61, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 62 can be identical as the material of p type semiconductor layer 40.In the present embodiment,
The material of low temperature P-type layer 62 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 62 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 62
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include contact layer 70, contact layer
70 are arranged on p type semiconductor layer 40, to be formed between the electrode or transparent conductive film that are formed in chip fabrication technique
Ohmic contact.
Specifically, the material of contact layer 70 can be using the InGaN or gallium nitride of p-type doping.
Further, the thickness of contact layer 70 can be 5nm~300nm, preferably 100nm；P-type is adulterated in contact layer 70
The doping concentration of agent can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
The embodiment of the invention provides a kind of production methods of gallium nitride based LED epitaxial slice, are suitable for production figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 4 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the production method of epitaxial wafer.Referring to fig. 4, which includes:
Step 201: a substrate is provided.
Optionally, which may include:
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 6 minutes~
It makes annealing treatment within 10 minutes (preferably 8 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: sequentially forming n type semiconductor layer, active layer and p type semiconductor layer on substrate.
In the present embodiment, active layer includes the multiple periodic structures stacked gradually, and each periodic structure includes successively layer
Folded Quantum Well and quantum are built.Inserted with multiple composite constructions in quantum base, each composite construction includes that the p-type stacked gradually is mixed
The gallium nitride layer of miscellaneous gallium nitride layer, undoped aluminum gallium nitride and n-type doping.
Optionally, the growth temperature of composite construction can be 850 DEG C~959 DEG C.It is consistent with the growth conditions that quantum is built, side
Just it realizes.
Optionally, the growth pressure of composite construction can be 100torr~500torr.The growth conditions one built with quantum
It causes, facilitates realization.
Preferably, the growth pressure of undoped aluminum gallium nitride can be less than the growth pressure that quantum is built, in favor of aluminium
Incorporation.
In the present embodiment, the growth temperature of Quantum Well can be 720 DEG C~829 DEG C, preferably 760 DEG C；Quantum Well
Growth pressure can be 100torr~500torr, preferably 300torr.The growth temperature that quantum is built can be 850 DEG C~959
DEG C, preferably 900 DEG C；The growth pressure that quantum is built can be 100torr~500torr, preferably 300torr.
Specifically, which may include:
The first step, controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure is 100torr~500torr
(preferably 300torr), grows n type semiconductor layer on substrate；
Second step grows active layer on n type semiconductor layer；
Third step, controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), the growing P-type semiconductor layer on active layer.
Optionally, before the first step, which can also include:
Grown buffer layer on substrate.
Correspondingly, n type semiconductor layer is grown on the buffer layer.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), undoped gallium nitride layer is grown on the buffer layer.
Optionally, before second step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, before third step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after third step, which can also include:
Contact layer is grown on p type semiconductor layer.
Specifically, contact layer is grown on p type semiconductor layer, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), contact layer is grown on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, N-type half
Conductor layer, active layer and p type semiconductor layer, the n type semiconductor layer, the active layer and the p type semiconductor layer successively layer
It folds over the substrate；The active layer includes the multiple periodic structures stacked gradually, and each periodic structure includes successively
The Quantum Well and quantum of stacking are built；It is characterized in that, inserted with multiple composite constructions, each composite junction in the quantum base
Structure includes the gallium nitride layer of the gallium nitride layer of the p-type doping stacked gradually, undoped aluminum gallium nitride and n-type doping.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the nitrogen of the n-type doping
Change gallium layer using germanium as N type dopant.
3. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that the nitrogen of the n-type doping
The doping concentration for changing germanium in gallium layer is 5*1016/cm3~6*1017/cm3。
4. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that the p-type
The doping concentration of P-type dopant is 5*10 in the gallium nitride layer of doping15/cm3~6*1017/cm3。
5. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that it is described not
The content of aluminium component is 0.04~0.5 in the aluminum gallium nitride of doping.
6. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that described multiple
The quantity for closing structure is 2~10.
7. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that described multiple
Close structure with a thickness of 0.5nm~8nm.
8. a kind of production method of gallium nitride based LED epitaxial slice, which is characterized in that the production method includes:
One substrate is provided；
N type semiconductor layer, active layer and p type semiconductor layer are sequentially formed over the substrate；
Wherein, the active layer includes the multiple periodic structures stacked gradually, and each periodic structure includes stacking gradually
Quantum Well and quantum are built；Inserted with multiple composite constructions in the quantum base, each composite construction includes the P stacked gradually
The gallium nitride layer of gallium nitride layer, undoped aluminum gallium nitride and n-type doping that type adulterates.
9. production method according to claim 8, which is characterized in that the growth temperature of the composite construction be 850 DEG C~
959℃。
10. production method according to claim 8 or claim 9, which is characterized in that the growth pressure of the composite construction is
100torr~500torr.
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