CN105932125A - GaN-base green light LED epitaxial structure and preparation method therefor - Google Patents

GaN-base green light LED epitaxial structure and preparation method therefor Download PDF

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Publication number
CN105932125A
CN105932125A CN201610324298.0A CN201610324298A CN105932125A CN 105932125 A CN105932125 A CN 105932125A CN 201610324298 A CN201610324298 A CN 201610324298A CN 105932125 A CN105932125 A CN 105932125A
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gan
layer
multiple quantum
quantum well
light emitting
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CN105932125B (en
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卢太平
朱亚丹
许并社
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Taiyuan University of Technology
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Taiyuan University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention belongs to the field of photoelectronic devices, specifically a GaN-base green light LED epitaxial structure and a preparation method therefor. The structure innovatively employs a plurality of pairs of InGaN/AlN/GaN to serve as a multiple quantum well light-emitting layer, wherein the plurality of pairs of InGaN/AlN/GaN are alternately stacked from the bottom to the top, and the key is that the multiple quantum well light-emitting layer employs an AlN insertion layer with the thickness 0.3-1nm. Because of the introduction of the super-thin AlN thin film (0.3-1nm), the structure irons out the dislocation and V-shaped pits in a light-emitting region, reduces the capability of a defect center in capturing carriers, improves the crystal quality, reduces the reverse leakage current, and improves the brightness and performances of a green LED.

Description

A kind of GaN Base green glow LED Epitaxial structure and preparation method thereof
Technical field
The invention belongs to field of optoelectronic devices, specifically a kind of GaN base green light LED epitaxial structure and preparation method thereof.
Background technology
Gallium nitride based light emitting diode (Light Emitting Diode, LED) there is the features such as high brightness, low energy consumption, long-life, fast response time and environmental protection, be widely used in multiple fields such as indoor and street lighting, traffic signals and outdoor display, automobile lamp illumination, liquid crystal backlight.Therefore, large power white light LED is considered as the lighting source of 21 century.It is a kind of method obtaining white light LEDs that red, green, blue (RGB) is directly mixed into white light, will blue-ray LED, green light LED and red-light LED be red according to luminous intensity: green: the ratio synthesis white light of indigo plant=2:7:1.
The internal quantum efficiency of blue light GaN base LED is up to more than 80% at present, but the internal quantum efficiency of green light LED is only 40%.In epitaxial growth technology, the well layer material of green light LED is the InGaN material with more high In ingredient (20%～35%), and the In component (10%～20%) in this BELAND light well layer InGaN material is much higher.In order to improve the incorporation efficiency of In atom in green light LED epitaxy technique, generally requiring the growth temperature reducing quantum well layer, the growth temperature of barrier layer declines the most therewith, and this seriously reduces crystal mass.Additionally between InGaN layer and the GaN layer of high In ingredient, there is bigger crystal lattice difference, cause more serious lattice mismatch.The defect centers such as this all makes the defects such as dislocation more be easily generated, dislocation have the ability of capture carrier, easily form leak channel so that the internal quantum efficiency of green light LED declines.And bigger lattice mismatch creates more serious polarity effect, exacerbate electron-hole wave functions separation spatially, reduce radiation recombination probability, also make brightness and the hydraulic performance decline of green light LED.The luminous efficiency of green light LED is poor, directly limit the promotion and application at general illumination field of the RGB white light.
Summary of the invention
The present invention is to solve the problem that the luminous efficiency of green light LED is poor, it is provided that a kind of GaN base green light LED epitaxial structure and preparation method thereof.
The present invention is achieved by the following technical solutions: a kind of GaN base green light LED epitaxial structure, including substrate, described substrate top surface is followed successively by GaN nucleating layer, GaN cushion, involuntary doped gan layer, N-type GaN layer, multiple quantum well light emitting layer, p-type GaN layer and p-type GaN contact layer from top to bottom, described multiple quantum well light emitting layer is some InGaN/AlN/GaN to be alternately stacked composition the most from bottom to top, in described multiple quantum well light emitting layer, the thickness of InGaN well layer is 2-5nm, the thickness of AlN insert layer be the thickness of 0.3-1nm, GaN barrier layer be 8-20nm.
GaN base green light LED epitaxial structure of the present invention, using of innovation is some to being alternately stacked the InGaN/AlN/GaN of composition from bottom to top as multiple quantum well light emitting layer, it is important that use the AlN insert layer of 0.3-1nm thickness in multiple quantum well light emitting layer.Due to the introducing of ultra-thin AlN film (0.3-1nm), it is passivated the defect such as the dislocation of light-emitting zone, V-arrangement hole, has reduced the ability of defect center capture carrier, improve crystal mass, reduce reverse leakage current, improve brightness and the performance of green light LED device.
When being embodied as, the InGaN/AlN/GaN periodicity of described multiple quantum well light emitting layer is 1-20 pair.
Preferably, in described InGaN well layer, In component is calculated in mass percent as 20-35%.
Further, the invention provides the preparation method of a kind of GaN base green light LED epitaxial structure, the method is for preparing above-mentioned GaN base green light LED epitaxial structure, and the method is to use following steps to realize:
One substrate is provided；
At Grown GaN nucleating layer；
GaN nucleating layer grows GaN cushion；
GaN cushion grows involuntary doped gan layer；
Involuntary doped gan layer grows N-type GaN layer；
Growing multiple quantum well light emitting layer in N-type GaN layer, described multiple quantum well light emitting layer is some InGaN/AlN/GaN to be alternately stacked composition the most from bottom to top；
Growth P-type GaN layer on multiple quantum well light emitting layer；
Growth P-type GaN contact layer in p-type GaN layer.
When specifically applying, in a growth cycle of described multiple quantum well light emitting layer, first lead to NH3Gas, In source, Ga source, grow InGaN well layer, after well layer has grown, continue to be passed through In source (such as trimethyl indium) and close NH3Gas and Ga source, keep 1-3min so that adsorb certain In atom on growing surface；It is then shut off In source and is passed through Al source (such as trimethyl aluminium) simultaneously, and stablize 2-5min so that Al atom has the fault locations such as the time enough dislocation moving to growing surface, is subsequently passed through NH3Gas, the fault location at growing surface forms AlN film；Finally it is passed through Ga source and NH3Gas, grows GaN barrier layer.Wherein, on growing surface, the In atom of absorption has the effect of surfactant to be favorably improved the mobility of Al atom, Al atom is enable to move to the fault location such as the dislocation of growing surface, V-arrangement hole, realize preferentially forming the purpose of AlN film at the fault location of growing surface, thus it is passivated defect, improve brightness and the performance of green light LED device, and preparation method is simple.
Accompanying drawing explanation
Fig. 1 is the structural representation of GaN base green light LED epitaxial structure in prior art.
Fig. 2 is the structural representation of a kind of GaN base green light LED epitaxial structure of the present invention.Present configuration uses Sapphire Substrate, may be used without other backing materials when being certainly embodied as, such as Si, SiC etc..
Fig. 3 is to be respectively adopted the comparison diagram of chip reverse leakage current that the epitaxial wafer of art methods and the method for the invention growth is made, and in figure, square represents prior art, and circle represents the present invention.As seen from the figure, the chip that the epitaxial wafer that the chip reverse leakage current prior art to be less than using the epitaxial wafer with AlN defect passivation layer of the method for the invention growth to make grows is made.
Fig. 4 is to be respectively adopted the comparison diagram of chip light emitting intensity that the epitaxial wafer of art methods and the method for the invention growth is made, and in figure, square represents prior art, and circle represents the present invention.As seen from the figure, the chip light emitting intensity using the epitaxial wafer with AlN defect passivation layer of the method for the invention growth to make is higher than the chip that the epitaxial wafer of prior art growth is made.
Detailed description of the invention
Embodiment 1
A kind of preparation method of GaN base green light LED epitaxial structure, the method is to use following steps to realize:
One Sapphire Substrate is provided；
At Grown GaN nucleating layer；
GaN nucleating layer grows GaN cushion；
GaN cushion grows involuntary doped gan layer；
Involuntary doped gan layer grows N-type GaN layer；
Growing multiple quantum well light emitting layer in N-type GaN layer, described multiple quantum well light emitting layer is that 1 couple of InGaN/AlN/GaN is alternately stacked composition the most from bottom to top；NH is first led in one growth cycle of described multiple quantum well light emitting layer3Gas, In source, Ga source, growth InGaN well layer (In of 20%), after InGaN well layer thick for 2nm has grown, continues to be passed through In source and close NH3Gas and Ga source, keep 2min so that adsorb certain In atom on growing surface；It is then shut off NH3With Ga source be passed through Al source, and stablize 5min so that Al atom has the fault locations such as the time enough dislocation moving to growing surface, is passed through NH the most again3Gas, the fault location at growing surface forms the AlN film of 1nm；Finally it is passed through NH3The GaN barrier layer thick with Ga source growth 15nm；
Growth P-type GaN layer on multiple quantum well light emitting layer；
Growth P-type GaN contact layer in p-type GaN layer.
Embodiment 2
A kind of preparation method of GaN base green light LED epitaxial structure, the method is to use following steps to realize:
One Sapphire Substrate is provided；
At Grown GaN nucleating layer；
GaN nucleating layer grows GaN cushion；
GaN cushion grows involuntary doped gan layer；
Involuntary doped gan layer grows N-type GaN layer；
Growing multiple quantum well light emitting layer in N-type GaN layer, described multiple quantum well light emitting layer is that 20 couples of InGaN/AlN/GaN are alternately stacked composition the most from bottom to top；NH is first led in one growth cycle of described multiple quantum well light emitting layer3Gas, In source and Ga source, the InGaN well layer (In of 30%) that growth 3nm is thick, after well layer has grown, continues to be passed through In source and close NH3Gas and Ga source, keep 3min so that adsorb certain In atom on growing surface；It is then shut off In source and is passed through Al source, and stablizing 2min so that Al atom has the fault locations such as the time enough dislocation moving to growing surface, is passed through NH the most again3Gas, the fault location at growing surface forms the AlN film of 0.3nm；Finally it is passed through NH3The GaN barrier layer thick with Ga source growth 20nm；
Growth P-type GaN layer on multiple quantum well light emitting layer；
Growth P-type GaN contact layer in p-type GaN layer.
Embodiment 3
A kind of preparation method of GaN base green light LED epitaxial structure, the method is to use following steps to realize:
One Sapphire Substrate is provided；
At Grown GaN nucleating layer；
GaN nucleating layer grows GaN cushion；
GaN cushion grows involuntary doped gan layer；
Involuntary doped gan layer grows N-type GaN layer；
Growing multiple quantum well light emitting layer in N-type GaN layer, described multiple quantum well light emitting layer is that 10 couples of InGaN/AlN/GaN are alternately stacked composition the most from bottom to top；NH is first led in one growth cycle of described multiple quantum well light emitting layer3Gas, In source and Ga source, the InGaN well layer (In of 35%) that growth 5nm is thick, after well layer has grown, continues to be passed through In source and close NH3Gas and Ga source, keep 1min so that adsorb certain In atom on growing surface；It is then shut off In source and is passed through Al source, and stablizing 4min so that Al atom has the fault locations such as the time enough dislocation moving to growing surface, is subsequently passed through NH3Gas, the fault location at growing surface forms the AlN film of 0.7nm；Finally it is passed through NH3The GaN barrier layer thick with Ga source growth 8nm；
Growth P-type GaN layer on multiple quantum well light emitting layer；
Growth P-type GaN contact layer in p-type GaN layer.

Claims (5)

1. a GaN base green light LED epitaxial structure, including substrate, described substrate top surface is followed successively by GaN nucleating layer, GaN cushion, involuntary doped gan layer, N-type GaN layer, multiple quantum well light emitting layer, p-type GaN layer and p-type GaN contact layer from top to bottom, it is characterized in that, described multiple quantum well light emitting layer is some InGaN/AlN/GaN to be alternately stacked composition the most from bottom to top, in described multiple quantum well light emitting layer, the thickness of InGaN well layer is 2-5nm, the thickness of AlN insert layer be the thickness of 0.3-1nm, GaN barrier layer be 8-20nm.
A kind of GaN base green light LED epitaxial structure the most according to claim 1, it is characterised in that the InGaN/AlN/GaN periodicity of described multiple quantum well light emitting layer is 1-20 pair.
A kind of GaN base green light LED epitaxial structure the most according to claim 2, it is characterised in that in described InGaN well layer, In component is calculated in mass percent as 20-35%.
4. a preparation method for GaN base green light LED epitaxial structure, the method is for preparing the GaN base green light LED epitaxial structure as described in claims 1 to 3 any claim, it is characterised in that the method is to use following steps to realize:
One substrate is provided；
At Grown GaN nucleating layer；
GaN nucleating layer grows GaN cushion；
GaN cushion grows involuntary doped gan layer；
Involuntary doped gan layer grows N-type GaN layer；
Growing multiple quantum well light emitting layer in N-type GaN layer, described multiple quantum well light emitting layer is some InGaN/AlN/GaN to be alternately stacked composition the most from bottom to top；
Growth P-type GaN layer on multiple quantum well light emitting layer；
Growth P-type GaN contact layer in p-type GaN layer.
The preparation method of a kind of GaN base green light LED epitaxial structure the most according to claim 4, it is characterised in that first lead to NH in a growth cycle of described multiple quantum well light emitting layer3Gas, In source and Ga source, grow InGaN well layer, after well layer has grown, continue to be passed through In source and close NH3Gas and Ga source, keep 1-3min so that adsorb certain In atom on growing surface；It is then shut off In source and is passed through Al source, and stablizing 2-5min so that Al atom has the fault locations such as the time enough dislocation moving to growing surface, is passed through NH the most again3Gas, the fault location at growing surface forms AlN film；Finally it is passed through NH3With Ga source, then growth GaN barrier layer.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449914A (en) * 2016-08-25 2017-02-22 映瑞光电科技(上海)有限公司 Epitaxial structure of GaN-based light-emitting diode and preparation method of epitaxial structure
CN106784179A (en) * 2016-12-06 2017-05-31 圆融光电科技股份有限公司 A kind of LED preparation methods, LED and chip
CN107482093A (en) * 2017-08-17 2017-12-15 华灿光电（浙江）有限公司 A kind of epitaxial wafer of light emitting diode and preparation method thereof
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CN108564890A (en) * 2017-12-29 2018-09-21 西安智盛锐芯半导体科技有限公司 Virtual LED display module based on three vitta shape LED chips and 6 times of frequency displaying methods
CN109473525A (en) * 2018-10-31 2019-03-15 华灿光电(苏州）有限公司 A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109860360A (en) * 2018-11-29 2019-06-07 华灿光电（浙江）有限公司 A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN111900237A (en) * 2020-08-13 2020-11-06 厦门乾照光电股份有限公司 Ultraviolet LED chip and manufacturing method thereof
CN114335270A (en) * 2021-12-27 2022-04-12 江西兆驰半导体有限公司 Light emitting diode epitaxial wafer, manufacturing method thereof and light emitting diode
CN116154060A (en) * 2023-04-18 2023-05-23 江西兆驰半导体有限公司 Yellow-green light LED epitaxial wafer, preparation method thereof and yellow-green light LED

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738340A (en) * 2011-04-01 2012-10-17 山东华光光电子有限公司 LED structure using ALInN quantum barrier to increase GaN-based LED inner quantum efficiency and manufacturing method thereof
JP2012199174A (en) * 2011-03-23 2012-10-18 Stanley Electric Co Ltd Deep uv source
CN104505443A (en) * 2014-12-26 2015-04-08 聚灿光电科技(苏州)有限公司 GaN-based LED epitaxial structure and production method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012199174A (en) * 2011-03-23 2012-10-18 Stanley Electric Co Ltd Deep uv source
CN102738340A (en) * 2011-04-01 2012-10-17 山东华光光电子有限公司 LED structure using ALInN quantum barrier to increase GaN-based LED inner quantum efficiency and manufacturing method thereof
CN104505443A (en) * 2014-12-26 2015-04-08 聚灿光电科技(苏州)有限公司 GaN-based LED epitaxial structure and production method thereof

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CN106449914B (en) * 2016-08-25 2018-11-27 映瑞光电科技(上海)有限公司 A kind of GaN base light emitting epitaxial structure and preparation method thereof
CN106449914A (en) * 2016-08-25 2017-02-22 映瑞光电科技(上海)有限公司 Epitaxial structure of GaN-based light-emitting diode and preparation method of epitaxial structure
CN106784179A (en) * 2016-12-06 2017-05-31 圆融光电科技股份有限公司 A kind of LED preparation methods, LED and chip
CN106784179B (en) * 2016-12-06 2019-05-14 圆融光电科技股份有限公司 A kind of LED preparation method, LED and chip
CN107482093B (en) * 2017-08-17 2019-10-08 华灿光电（浙江）有限公司 A kind of epitaxial wafer of light emitting diode and preparation method thereof
CN107482093A (en) * 2017-08-17 2017-12-15 华灿光电（浙江）有限公司 A kind of epitaxial wafer of light emitting diode and preparation method thereof
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CN108230926A (en) * 2017-12-29 2018-06-29 西安智盛锐芯半导体科技有限公司 Virtual LED display module and 4 times of frequency displaying methods based on four color LED chips
CN107909931A (en) * 2017-12-29 2018-04-13 西安智盛锐芯半导体科技有限公司 Virtual LED display module and 6 times of frequency displaying methods based on three vitta shape LED chips
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CN109473525B (en) * 2018-10-31 2021-06-29 华灿光电(苏州）有限公司 Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof
CN109473525A (en) * 2018-10-31 2019-03-15 华灿光电(苏州）有限公司 A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109860360A (en) * 2018-11-29 2019-06-07 华灿光电（浙江）有限公司 A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109860360B (en) * 2018-11-29 2020-08-18 华灿光电（浙江）有限公司 Gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof
CN111900237A (en) * 2020-08-13 2020-11-06 厦门乾照光电股份有限公司 Ultraviolet LED chip and manufacturing method thereof
CN114335270A (en) * 2021-12-27 2022-04-12 江西兆驰半导体有限公司 Light emitting diode epitaxial wafer, manufacturing method thereof and light emitting diode
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