CN105226150A - A kind of N-B is two mixes efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate and its preparation method and application - Google Patents
A kind of N-B is two mixes efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate and its preparation method and application Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000002156 mixing Methods 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 238000004020 luminiscence type Methods 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 5
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
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- 239000010432 diamond Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The present invention relates to a kind of N-B pair and mix efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate and its preparation method and application, comprise two SiC substrate, GaN resilient coating, undoped GaN layer, N-GaN layer, ultraviolet light multiple quantum well layer, blue light multiple quantum well layer and the P-GaN layer mixed of the B-N set gradually.Described white-light LED structure is inverted structure, the yellow luminescence of the two SiC substrate of mixing of the ultraviolet excitation B-N in described ultraviolet light multiple quantum well layer, the blue light sent with blue light multiple quantum well layer is again combined, to penetrate white light from the two SiC substrate of mixing of B-N, compare the LED chip structure of normal encapsulation, electrodeless on exiting surface, greatly increase lighting area, improve light extraction efficiency.The present invention carries out secondary quantum conversion without using fluorescent material, improves utilization rate of equipment and installations, simplifies technique, improves LED energy conversion efficiency and life-span, improves the quality of emergent light, stability of photoluminescence and product repeatability.
Description
Technical field
The present invention relates to a kind of N-B pair and mix efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate and its preparation method and application, belong to technical field of semiconductors.
Background technology
1963, Z.I.Alferov and H.Kroemer proposed the concept of the laser based on heterojunction independently of one another.Because of the founder contribution that invention heterojunction transistor and laser diode (LD) are made, Z.I.Alferov and H.Kroemer obtains the Nobel Prize in physics of 2000.1971, the Pankove research in U.S. RCA laboratory has found the foreign atom forming efficient blue-light-emitting center in nitride material, and develop the GaN blue-ray LED device of MIS (metal-insulator semiconductor) structure, Here it is the blue led that is born at first of the whole world.But be limited to growing technology at that time, be difficult to grow high-quality GaN film material, p-type doping simultaneously also fails to solve, and therefore, external quantum efficiency only has 0.1%, can't see application prospect.1985, AmanoHiroshi utilizes low temperature AI N technology successful growth to go out uniform high-quality GaN film, subsequently, by low energy electron beam irradiation (LEEBI), AmanoHiroshi and AkasakiIsamu obtains P type GaN film, have developed p-n junction blue LED in 1989 first in the whole world.The people such as the Nakamura of Nichia company make use of InGaN/GaN cycle quantum well structure in first time in 1992, instead of traditional p-i-n junction structure, improve the luminous efficiency of blue-ray LED significantly.Nakamura there have been developed epitaxy technology, replaces AlN as resilient coating with the thin layer GaN of low-temperature epitaxy.Within 1993, achieve the volume production of blue-ray LED.Since then, high brightness LED is made to achieve commercialization from green glow near ultraviolet product based on the fast development of the broad stopband III-V group semi-conductor material of GaN, InN, AlN and ternary system and quaternary material.
LED adopts solid encapsulation, and sound construction, life-span can reach more than 100,000 hours.LED also has that operating voltage is low, power consumption is little, light efficiency is high, the response time is extremely short, photochromic pure, lightweight, the series of characteristics such as volume is little.Especially the invention of high-power and high-luminance white light LEDs, is called " the lighting field third time revolution " after illumination of getting fire, Edison invented electric light by industry.
Current white light LEDs mainly adopts following two kinds of structures: one applies fluorescent material on blue-ray LED, namely the some blue light sent by blue-ray LED is absorbed by fluorescent material and sends gold-tinted, the yellow light mix that another part blue light and fluorescent material send, thus can white light be obtained.But, utilize fluorescent material to carry out the luminous efficiency of the white light LEDs that secondary quantum conversion just can blend lower.Another kind is set together stacked for the LED chip of red, green, blue three kinds of primary colours, lights the LED of described three kinds of primary colours simultaneously, thus mixing red, green, blue three kinds of primary colours obtain white light.This white light LEDs needs stacked together for the LED chip of three kinds of primary colours, therefore the preparation method of the white light LEDs of this structure is comparatively complicated and cost is higher.
U.S. patent Nos US5998925 discloses a kind of based on blue chip, chip top is filled with the yellow fluorescent powder and transparent glue epoxy glue that excite and produce wavelength 555nm, blue-ray LED excites YAG fluorescent powder, produce the gold-tinted with blue light complementation, mixing becomes the white light of two wavelength, and this patent exists following defect: the white light red color light component of generation is few, color rendering index is lower.
Chinese patent literature CN103367570A discloses a kind of white light LEDs, comprise: three luminescence units are respectively the luminescence unit of red, green, blue three primary colors, each luminescence unit all has an exiting surface, and the light collection that three luminescence units send is in a convergent point; Optical grating construction is arranged at the convergent point of described three luminescence units, this optical grating construction has one first semiconductor layer, an active layer and one second semiconductor layer, first semiconductor layer, active layer and the second semiconductor layer are cascading, optical grating construction has an exiting surface and multiple incidence surface crossing with exiting surface, the exiting surface of each luminescence unit is just to the incidence surface of described optical grating construction, and the exiting surface of optical grating construction is arranged on the surface of the second semiconductor layer away from active layer.There is following defect in this patent: structure is loaded down with trivial details and technics comparing complicated, will take a long time in manufacturing process, and this will cause white light LEDs cost to remain high.
Chinese patent literature CN103811638A discloses a kind of white light LEDs, comprise: blue-light LED chip, support, blue-light LED chip is fixed in support bowl cup by crystal-bonding adhesive, by the green emitting phosphor of 7.6% ~ 8.0%, the orange fluorescent powder of 2.0% ~ 2.4% and 89.6% ~ 90.4% silica gel be mixed into fluorescent glue, be filled in support bowl cup after stirring, baking is dry to be shaped, and finally encapsulates dome-type transparent epoxy resin.Wherein, the excitation wavelength of blue-light LED chip is 430-470nm, and the excitation wavelength of green emitting phosphor is 500-540nm; The excitation wavelength of orange fluorescent powder is 585-610nm.There is following defect in this patent: technique very complicated, and manufacturing process difficult point is heavy, implements difficulty large.
Chinese patent literature CN101956178A discloses a kind of preparation method preparing nano-diamond film on a si substrate, pass through chemical gaseous phase depositing process on a si substrate, prepare boron dopen Nano diamond thin, then boron doped nano-diamond film is obtained by vacuum annealing technology, diamond film growth on a si substrate, and write patent diamond thin be above the quantum well of GaN base light-emitting diode, p-type limiting layer grows, conventional p-type gallium nitride layer is substituted with diamond thin, the holoe carrier of higher concentration can be improved, reduce the extinction problem of p-type gallium nitride simultaneously, improve the light extraction efficiency of LED.There is following defect in this patent: can not be applied to light-emitting diode field.
Chinese patent literature CN104868027A discloses a kind of unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof, this epitaxial structure comprise set gradually from bottom to top substrate, GaN resilient coating, N-GaN layer, ultraviolet wavelength multiple quantum well layer, non-ly mix high/low temperature GaN layer, the multiple quantum well layer of blue light wavelength and P-GaN layer.By the non-yellow luminescence mixing high/low temperature GaN layer of ultraviolet excitation, and after superposing with blue light, obtain a kind of GaN base white-light LED structure.There is following defect in this patent: the method inserts high/low temperature GaN layer between ultraviolet light multiple quantum well layer and blue light multiple quantum well layer, and technique is more complicated, realize difficulty comparatively large, and growth time is longer, adds the cost of epitaxial wafer.
Summary of the invention
For the deficiencies in the prior art, the invention provides the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B;
Present invention also offers the preparation method of above-mentioned white-light LED structure;
Present invention also offers the application of above-mentioned white-light LED structure.
Terminological interpretation
1, LED, i.e. light-emitting diode.
2, the two SiC substrate of mixing of B-N, refers to the SiC substrate doped with B and N.
3, MOCVD is the abbreviation of metallorganic chemical vapor deposition (MetalorganicChemicalVaporDeposition).
4, ICP is the abbreviation of sense coupling (InductivelyCoupledPlasma).
5, doping content, the unit of doping content described herein is atomic concentration, the number in referring to every cubic centimetre shared by this atom.
Technical scheme of the present invention is as follows:
The two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of N-B, comprises two SiC substrate, GaN resilient coating, undoped GaN layer, N-GaN layer, ultraviolet light multiple quantum well layer, blue light multiple quantum well layer and the P-GaN layer mixed of the B-N set gradually.
Preferred according to the present invention, the thickness of described GaN resilient coating is 20-50nm, further preferably, 20-30nm or 30-50nm, and particularly preferably, 30nm.
Preferred according to the present invention, the thickness of described undoped GaN layer is 200-800nm, further preferably, and 300-500nm, particularly preferably, 300nm or 500nm.
Preferred according to the present invention, the thickness of described N-GaN layer is 3 μm, and the doping content of the Si adulterated in described N-GaN layer is 2 × 10
18cm
-3-4 × 10
19cm
-3, further preferably, the thickness of described N-GaN layer is 3 μm, and the doping content of the Si adulterated in described N-GaN layer is 3 × 10
19cm
-3.
Preferred according to the present invention, described ultraviolet light multiple quantum well layer comprises the In of periodically alternately superposition
xga
1-xn well layer and Al
xga
1-xn barrier layer, the cycle is 6-12, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 2-4nm, In is 12%-20%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 8-15nm, Al is 2%-8%; Preferred further, the cycle is 7-10, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 3nm, In is 16%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 10nm, Al is 5%.
Preferred according to the present invention, described blue light multiple quantum well layer comprises the In of periodically alternately superposition
xga
1-xn well layer and GaN barrier layer, the cycle is 6-12, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 2-5nm, In is 12%-20%, and the thickness of described GaN barrier layer is 8-20nm, and further preferably, the cycle is 9-10, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 3-4nm, In is 16%, and the thickness of described GaN barrier layer is 14nm.
Preferred according to the present invention, the thickness of described P-GaN layer is 150-350nm, further preferably, 200-240nm or 240-260nm, particularly preferred, 240nm or 260nm.
Employing physical vapor transport (PhysicalVaporTransport, PVT) while growth SiC single crystal, mix nitrogen and boron obtains the two SiC substrate of mixing of described B-N, and the doping content of B is 5 × 10
17cm
-3-1 × 10
19cm
-3, the doping content of N is 1 × 10
18cm
-3-4 × 10
19cm
-3.
According to the present invention, the two preparation method mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of a kind of N-B, comprise and adopt MOCVD method at the two SiC substrate growing epitaxial layers mixed of B-N, step is as follows:
(1) under 1000-1100 DEG C of hydrogen environment, to the two SiC substrate HIGH TEMPERATURE PURGE mixed of B-N;
(2) be cooled to 500-650 DEG C, the two SiC substrate of mixing of B-N grows described GaN resilient coating;
(3) be warming up to 1000-1200 DEG C, described GaN resilient coating grows described undoped GaN layer, N-GaN layer successively;
(4) change carrier gas into nitrogen by hydrogen, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium, N-GaN layer grows described In at 720-810 DEG C
xga
1-xn well layer, more described Al is grown at 850-920 DEG C
xga
1-xn barrier layer, described In
xga
1-xn well layer and Al
xga
1-xn barrier layer periodically alternately superposes growth, forms ultraviolet light multiple quantum well layer;
(5) on ultraviolet light multiple quantum well layer, at 700-800 DEG C, described In is grown
xga
1-xn well layer, then at 800-900 DEG C, grow described GaN barrier layer, described In
xga
1-xn well layer and described GaN barrier layer periodically alternately superpose growth, form blue light multiple quantum well layer;
(6) at 800-900 DEG C, blue light multiple quantum well layer grows described P-GaN layer.
The present invention adopts the direct epitaxial growth of MOCVD method to prepare complete white-light LED structure, instead of obtain white light further by excitated fluorescent powder luminescence, improve utilization rate of equipment and installations, effectively simplify technique, not only shorten technique preparation time, and reduce process costs.
According to the present invention, the two application of mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of a kind of N-B, concrete steps comprise: by described white-light LED structure after ICP etching, expose described N-GaN layer, be inverted by the described white-light LED structure after etching, described P-GaN layer connects P electrode, described N-GaN layer connects N electrode, form loop, described P electrode and described N electrode are arranged on boss, and described boss is arranged on pedestal; Described ultraviolet light multiple quantum well layer inspires ultraviolet light, the two SiC substrate of mixing of B-N described in UV-irradiation, inspire the yellow luminescence of the two SiC substrate of mixing of described B-N, the blue light that the gold-tinted sent sends with described blue light multiple quantum well layer is again combined, be mixed into white light, from the two SiC substrate injection of mixing of B-N, reach quality white light.
Preferred according to the present invention, described P electrode is metal electrode, further preferably, and Ag electrode.
Compare the LED chip structure of normal encapsulation, electrodeless on exiting surface, greatly increase lighting area, improve light extraction efficiency.
Beneficial effect of the present invention is:
The yellow luminescence of the two SiC substrate of mixing of the ultraviolet excitation B-N 1, in ultraviolet light multiple quantum well layer of the present invention, and combine with the blue light that blue light multiple quantum well layer sends thus launch white light, improve the color rendering index 10%-20% of white light LEDs, reduce its colour temperature.
2, the present invention utilizes MOCVD directly to extend complete white-light LED structure outward, instead of obtain white light by the next nearly step of excitated fluorescent powder luminescence, secondary quantum conversion is carried out without using fluorescent material, improve utilization rate of equipment and installations, effectively simplify technique, not only shorten technique preparation time, reduce process costs, also improve LED energy conversion efficiency and life-span, improve the quality of emergent light, stability of photoluminescence and product repeatability.
3, white-light LED structure of the present invention is inverted structure, and electrode, in bottom, increases lighting area greatly, and improve light extraction efficiency, light emission rate improves 30%-40%.
Accompanying drawing explanation
Fig. 1 is the two schematic diagram mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of N-B of the present invention;
In Fig. 1,1, the two SiC substrate of mixing of B-N, 2, GaN resilient coating, 3, undoped GaN layer, 4, N-GaN layer, 5, ultraviolet light multiple quantum well layer, 6, blue light multiple quantum well layer, 7, P-GaN layer.
Fig. 2 is the two efficient white light LED structure application schematic diagram mixing the GaN base unstressed configuration powder of SiC substrate of N-B of the present invention;
In Fig. 2,8, P electrode, 9, N electrode, 10, boss, 11, pedestal.
Embodiment
Below in conjunction with Figure of description and embodiment, the invention will be further described, but be not limited thereto.
Embodiment 1
The two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of N-B, comprises two SiC substrate 1, GaN resilient coating 2, undoped GaN layer 3, N-GaN layer 4, ultraviolet light multiple quantum well layer 5, blue light multiple quantum well layer 6 and the P-GaN layer 7 mixed of the B-N set gradually.
Employing physical vapor transport (PhysicalVaporTransport, PVT) while growth SiC single crystal, mix nitrogen and boron obtains the two SiC substrate 1 of mixing of described B-N.
The thickness of described GaN resilient coating 2 is 20nm.
The thickness of described undoped GaN layer 3 is 300nm.
The thickness of described N-GaN layer 4 is 2 μm, and in described N-GaN layer 4, the doping content of the Si of doping is 3 × 10
19cm
-3.
Described ultraviolet light multiple quantum well layer 5 comprises the In of periodically alternately superposition
xga
1-xn well layer and Al
xga
1-xn barrier layer, the cycle is 7, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 2nm, In is 12%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 8nm, Al is 2%.
Described blue light multiple quantum well layer 6 comprises the In of periodically alternately superposition
xga
1-xn well layer and GaN barrier layer, the cycle is 7, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 3nm, In is 12%, and the thickness of described GaN barrier layer is 8nm.
The thickness of described P-GaN layer 7 is 200nm.
Described white-light LED structure is inverted structure, the yellow luminescence of the two SiC substrate 1 of mixing of the ultraviolet excitation B-N in described ultraviolet light multiple quantum well layer 5, the blue light sent with blue light multiple quantum well layer 6 is again combined, to penetrate white light from the two SiC substrate 1 of mixing of B-N, compare the LED chip structure of normal encapsulation, electrodeless on exiting surface, greatly increase lighting area, light emission rate improves 30%.
Embodiment 2
The two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B as described in Example 1, its difference is:
The thickness of described GaN resilient coating 2 is 30nm.
The thickness of described undoped GaN layer 3 is 500nm.
The thickness of described N-GaN layer 4 is 3 μm, and in described N-GaN layer 4, the doping content of the Si of doping is 4 × 10
19cm
-3.
Described ultraviolet light multiple quantum well layer 5 comprises the In of periodically alternately superposition
xga
1-xn well layer and Al
xga
1-xn barrier layer, the cycle is 10, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 3nm, In is 16%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 10nm, Al is 5%.
Described blue light multiple quantum well layer 6 comprises the In of periodically alternately superposition
xga
1-xn well layer and GaN barrier layer, the cycle is 9, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 4nm, In is 16%, and the thickness of described GaN barrier layer is 12nm.
The thickness of described P-GaN layer 7 is 240nm.
White-light LED structure light emission rate described in the present embodiment improves 35%.
Embodiment 3
The two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B as described in Example 1, its difference is:
The thickness of described GaN resilient coating 2 is 50nm.
The thickness of described undoped GaN layer 3 is 800nm.
The thickness of described N-GaN layer 4 is 3 μm, and in described N-GaN layer 4, the doping content of the Si of doping is 2 × 10
19cm
-3.
Described ultraviolet light multiple quantum well layer 5 comprises the In of periodically alternately superposition
xga
1-xn well layer and Al
xga
1-xn barrier layer, the cycle is 12, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 4nm, In is 20%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 12nm, Al is 8%.
Described blue light multiple quantum well layer 6 comprises the In of periodically alternately superposition
xga
1-xn well layer and GaN barrier layer, the cycle is 12, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 5nm, In is 20%, and the thickness of described GaN barrier layer is 14nm.
The thickness of described P-GaN layer 7 is 260nm.
White-light LED structure light emission rate described in the present embodiment improves 40%.
Embodiment 4
The two preparation method mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of a kind of N-B as described in Example 1, comprise and adopt MOCVD method at two SiC substrate 1 growing epitaxial layers mixed of B-N, step is as follows:
(1) under 1050 DEG C of hydrogen environments, to two SiC substrate 1 HIGH TEMPERATURE PURGE mixed of B-N;
(2) be cooled to 550 DEG C, the two SiC substrate 1 of mixing of B-N grows the thick GaN resilient coating 2 of 20nm;
(3) be warming up to 1050 DEG C, GaN resilient coating 2 grows N-GaN layer 4 that the thick undoped GaN layer of 300nm 3,2 μm is thick successively, in described N-GaN layer 4, the doping content of the Si of doping is 3 × 10
19cm
-3;
(4) change carrier gas into nitrogen by hydrogen, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium, on N-GaN layer 4, at 730 DEG C, growth thickness is the In of 2nm
xga
1-xn well layer, the atomic ratio of In is 12%; At 810 DEG C, growth thickness is the Al of 8nm again
xga
1-xn barrier layer, the atomic ratio of Al is 2%, described In
xga
1-xn well layer and Al
xga
1-xn barrier layer periodically alternately superposes growth, and the cycle is 7, forms ultraviolet light multiple quantum well layer 5;
(5) on ultraviolet light multiple quantum well layer 5, at 720 DEG C, growth thickness is the In of 3nm
xga
1-xn well layer, the atomic ratio of In is 12%, then growth thickness is the GaN barrier layer of 8nm at 830 DEG C, described In
xga
1-xn well layer and described GaN barrier layer periodically alternately superpose growth, and the cycle is 7, form blue light multiple quantum well layer 6;
(6) at 850 DEG C, on blue light multiple quantum well layer 6, growth thickness is the P-GaN layer 7 of 200nm.
The present invention adopts the direct epitaxial growth of MOCVD method to prepare complete white-light LED structure, instead of obtain white light further by excitated fluorescent powder luminescence, improve utilization rate of equipment and installations, effectively simplify technique, not only shorten technique preparation time, and reduce process costs.
Embodiment 5
The two preparation method mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of a kind of N-B as described in Example 2, comprise and adopt MOCVD method at two SiC substrate 1 growing epitaxial layers mixed of B-N, step is as follows:
(1) under 1070 DEG C of hydrogen environments, to two SiC substrate 1 HIGH TEMPERATURE PURGE mixed of B-N;
(2) be cooled to 570 DEG C, the two SiC substrate 1 of mixing of B-N grows the thick GaN resilient coating 2 of 30nm;
(3) be warming up to 1070 DEG C, GaN resilient coating 2 grows N-GaN layer 4 that the thick undoped GaN layer of 500nm 3,3 μm is thick successively, in described N-GaN layer 4, the doping content of the Si of doping is 4 × 10
19cm
-3;
(4) change carrier gas into nitrogen by hydrogen, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium, on N-GaN layer 4, at 750 DEG C, growth thickness is the In of 3nm
xga
1-xn well layer, the atomic ratio of In is 16%; At 830 DEG C, growth thickness is the Al of 10nm again
xga
1-xn barrier layer, the atomic ratio of Al is 5%, described In
xga
1-xn well layer and Al
xga
1-xn barrier layer periodically alternately superposes growth, and the cycle is 10, forms ultraviolet light multiple quantum well layer 5;
(5) on ultraviolet light multiple quantum well layer 5, at 730 DEG C, growth thickness is the In of 4nm
xga
1-xn well layer, the atomic ratio of In is 16%, then growth thickness is the GaN barrier layer of 12nm at 820 DEG C, described In
xga
1-xn well layer and described GaN barrier layer periodically alternately superpose growth, and the cycle is 9, form blue light multiple quantum well layer 6;
(6) at 870 DEG C, on blue light multiple quantum well layer 6, growth thickness is the P-GaN layer 7 of 240nm.
The present invention adopts the direct epitaxial growth of MOCVD method to prepare complete white-light LED structure, instead of obtain white light further by excitated fluorescent powder luminescence, improve utilization rate of equipment and installations, effectively simplify technique, not only shorten technique preparation time, and reduce process costs.
Embodiment 6
The two preparation method mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of a kind of N-B as described in Example 3, comprise and adopt MOCVD method at two SiC substrate 1 growing epitaxial layers mixed of B-N, step is as follows:
(1) under 1090 DEG C of hydrogen environments, to two SiC substrate 1 HIGH TEMPERATURE PURGE mixed of B-N;
(2) be cooled to 590 DEG C, the two SiC substrate 1 of mixing of B-N grows the thick GaN resilient coating 2 of 50nm;
(3) be warming up to 1070 DEG C, GaN resilient coating 2 grows N-GaN layer 4 that the thick undoped GaN layer of 800nm 3,4 μm is thick successively, in described N-GaN layer 4, the doping content of the Si of doping is 2 × 10
19cm
-3;
(4) change carrier gas into nitrogen by hydrogen, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium, on N-GaN layer 4, at 760 DEG C, growth thickness is the In of 4nm
xga
1-xn well layer, the atomic ratio of In is 20%; At 850 DEG C, growth thickness is the Al of 12nm again
xga
1-xn barrier layer, the atomic ratio of Al is 8%, described In
xga
1-xn well layer and Al
xga
1-xn barrier layer periodically alternately superposes growth, and the cycle is 12, forms ultraviolet light multiple quantum well layer 5;
(5) on ultraviolet light multiple quantum well layer 5, at 740 DEG C, growth thickness is the In of 5nm
xga
1-xn well layer, the atomic ratio of In is 20%, then growth thickness is the GaN barrier layer of 14nm at 830 DEG C, described In
xga
1-xn well layer and described GaN barrier layer periodically alternately superpose growth, and the cycle is 12, form blue light multiple quantum well layer 6;
(6) at 890 DEG C, on blue light multiple quantum well layer 6, growth thickness is the P-GaN layer 7 of 260nm.
The present invention adopts the direct epitaxial growth of MOCVD method to prepare complete white-light LED structure, instead of obtain white light further by excitated fluorescent powder luminescence, improve utilization rate of equipment and installations, effectively simplify technique, not only shorten technique preparation time, and reduce process costs.
Embodiment 7
The two application of mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of the arbitrary described N-B of embodiment 1-3, concrete steps comprise: by described white-light LED structure after ICP etching, expose described N-GaN layer 4, described white-light LED structure after etching is inverted, described P-GaN layer 7 connects P electrode 8, and described N-GaN layer 4 connects N electrode 9, forms loop, described P electrode 8 and described N electrode 9 are arranged on boss 10, and described boss 10 arranges on the base 11; Described ultraviolet light multiple quantum well layer 5 inspires ultraviolet light, the two SiC substrate 1 of mixing of B-N described in UV-irradiation, inspire the yellow luminescence of the two SiC substrate 1 of mixing of described B-N, the blue light that the gold-tinted sent sends with described blue light multiple quantum well layer 6 is again combined, be mixed into white light, penetrate from the two SiC substrate 1 of mixing of B-N, reach quality white light.
Compare the LED chip structure of normal encapsulation, greatly increase lighting area, improve light extraction efficiency, light emission rate improves 40%.
Claims (10)
1. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of N-B, it is characterized in that, comprise two SiC substrate, GaN resilient coating, undoped GaN layer, N-GaN layer, ultraviolet light multiple quantum well layer, blue light multiple quantum well layer and the P-GaN layer mixed of the B-N set gradually.
2. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 1, it is characterized in that, the thickness of described GaN resilient coating is 20-50nm, further preferably, 20-30nm or 30-50nm, particularly preferably, 30nm.
3. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 1, it is characterized in that, the thickness of described undoped GaN layer is 200-800nm, further preferably, 300-500nm, particularly preferably, 300nm or 500nm.
4. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 1, it is characterized in that, the thickness of described N-GaN layer is 3 μm, and the doping content of the Si adulterated in described N-GaN layer is 2 × 10
18cm
-3-4 × 10
19cm
-3, further preferably, the thickness of described N-GaN layer is 3 μm, and the doping content of the Si adulterated in described N-GaN layer is 3 × 10
19cm
-3.
5. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 1, it is characterized in that, described ultraviolet light multiple quantum well layer comprises the In of periodically alternately superposition
xga
1-xn well layer and Al
xga
1-xn barrier layer, the cycle is 6-12, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 2-4nm, In is 12%-20%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 8-15nm, Al is 2%-8%; Preferred further, the cycle is 7-10, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 3nm, In is 16%, described Al
xga
1-xthe thickness of N barrier layer is the atomic ratio of 10nm, Al is 5%.
6. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 1, it is characterized in that, described blue light multiple quantum well layer comprises the In of periodically alternately superposition
xga
1-xn well layer and GaN barrier layer, the cycle is 6-12, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 2-5nm, In is 12%-20%, and the thickness of described GaN barrier layer is 8-20nm, and further preferably, the cycle is 9-10, described In
xga
1-xthe thickness of N well layer is the atomic ratio of 3-4nm, In is 16%, and the thickness of described GaN barrier layer is 14nm.
7. the two efficient white light LED structure of mixing the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 1, it is characterized in that, the thickness of described P-GaN layer is 150-350nm, preferred further, 200-240nm or 240-260nm, particularly preferred, 240nm or 260nm.
8. the two preparation method mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of the arbitrary described a kind of N-B of claim 1-7, comprise and adopt MOCVD method at the two SiC substrate growing epitaxial layers mixed of B-N, it is characterized in that, step is as follows:
(1) under 1000-1100 DEG C of hydrogen environment, to the two SiC substrate HIGH TEMPERATURE PURGE mixed of B-N;
(2) be cooled to 500-650 DEG C, the two SiC substrate of mixing of B-N grows described GaN resilient coating;
(3) be warming up to 1000-1200 DEG C, described GaN resilient coating grows described undoped GaN layer, N-GaN layer successively;
(4) change carrier gas into nitrogen by hydrogen, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium, N-GaN layer grows described In at 720-810 DEG C
xga
1-xn well layer, more described Al is grown at 850-920 DEG C
xga
1-xn barrier layer, described In
xga
1-xn well layer and Al
xga
1-xn barrier layer periodically alternately superposes growth, forms ultraviolet light multiple quantum well layer;
(5) on ultraviolet light multiple quantum well layer, at 700-800 DEG C, described In is grown
xga
1-xn well layer, then at 800-900 DEG C, grow described GaN barrier layer, described In
xga
1-xn well layer and described GaN barrier layer periodically alternately superpose growth, form blue light multiple quantum well layer;
(6) at 800-900 DEG C, blue light multiple quantum well layer grows described P-GaN layer.
9. the two application of mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of the arbitrary described a kind of N-B of claim 1-7, it is characterized in that, concrete steps comprise: by described white-light LED structure after ICP etching, expose described N-GaN layer, be inverted by the described white-light LED structure after etching, described P-GaN layer connects P electrode, described N-GaN layer connects N electrode, form loop, described P electrode and described N electrode are arranged on boss, and described boss is arranged on pedestal; Described ultraviolet light multiple quantum well layer inspires ultraviolet light, the two SiC substrate of mixing of B-N described in UV-irradiation, inspire the yellow luminescence of the two SiC substrate of mixing of described B-N, the blue light that the gold-tinted sent sends with described blue light multiple quantum well layer is again combined, be mixed into white light, from the two SiC substrate injection of mixing of B-N, reach quality white light.
10. the two application of mixing the efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate of a kind of N-B according to claim 9, it is characterized in that, described P electrode is metal electrode, further preferably, Ag electrode.
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