CN104868027B - A kind of unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof - Google Patents
A kind of unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000203 mixture Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 26
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000004020 luminiscence type Methods 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 239000003086 colorant Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- IGOGAEYHSPSTHS-UHFFFAOYSA-N dimethylgallium Chemical compound C[Ga]C IGOGAEYHSPSTHS-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910003465 moissanite Inorganic materials 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
A kind of unstressed configuration powder GaN base white light LEDs epitaxial structure and preparation method thereof, substrate which includes setting gradually from bottom to top, GaN cushions, N GaN layers, ultraviolet wavelength multiple quantum well layer, non-mix high/low temperature GaN layer, the multiple quantum well layer of blue light wavelength and P GaN layers；Its preparation method, comprises the following steps：（1）In MOCVD device, GaN cushions are grown on substrate,（2）N GaN layers are grown on GaN cushions,（3）The multiple quantum well layer of ultraviolet wavelength is grown in N GaN layers,（4）Grow first it is non-mix low-temperature gan layer, then grow it is non-mix high-temperature gan layer,（5）The multiple quantum well layer of blue light wavelength is grown in non-doped gan layer,（6）P GaN layers are grown on the multiple quantum well layer of blue light wavelength.The present invention is directly outer to extend complete white-light LED structure, effectively simplifies technique, improves the light conversion efficiency of white light LEDs, reduce process costs, while also substantially increases the luminous efficiency of GaN base LED.
Description
Technical field
The present invention relates to a kind of epitaxial structure of GaN base white light LEDs of unstressed configuration powder and preparation method thereof, belong to white light
LED technology field.
Background technology
Nakamura of Nichia companies et al. successfully develops GaN base blue light-emitting diode since 1991（LED）,
The fast development of broad stopband III-V group semi-conductor material based on GaN, InN, AlN and its ternary system and quaternary material makes
High brightness LED realizes commercialization from green light near ultraviolet product.The excellent thing of nitride semi-conductor material
Reason, the characteristic such as chemical stability, high saturated electrons mobility, become the opto-electronic devices such as GaN base laser, light emitting diode
Preferred material.Semiconductor white light emitting diode（White light LEDs）It is mankind's illumination as the new and effective solid light source of illumination
Leaped again in history, its economy and social effect are huge.LED is small up to 100,000 using solid encapsulation, sound construction, service life
When more than.LED is also with operating voltage is low, power consumption is small, light efficiency is high, the response time is extremely short, photochromic pure, light-weight, small
Etc. series of characteristics.The especially invention of high-power and high-luminance white light LEDs, is known as sending out after illumination of getting fire, Edison by industry
" revolution of lighting area third time " after bright electric light.
Before realizing that panchromatic white light emission system is always nitride research and applies using III-V nitride semiconductor
Along hot spot.Current white light LEDs mainly use following two structures.A kind of is that the glimmering of Yellow light-emitting low temperature is coated on blue-ray LED
Light powder.The some blue light that the blue-ray LED is sent is absorbed by fluorescent powder sends yellow light, and another part blue light is sent with fluorescent powder
Yellow light mixing, so as to obtain white light.However, need to carry out secondary quantum using fluorescent powder for this white light LEDs
Conversion can just blend white light, so the luminous efficiency of the white light LEDs of this structure is relatively low.Another kind is by red, green, blue three
The LED chip laminates of kind primary colours are set together.The LED of three kinds of primary colours is lighted at the same time, so as to mix red, green, blue three
Kind primary colours obtain white light.But this white light LEDs are needed the LED chip laminates of three kinds of primary colours together, therefore this structure
White light LEDs preparation method it is complex and cost is higher.
A kind of white light LEDs disclosed in Chinese patent literature CN103367570 A, including：Three luminescence units are respectively red,
The luminescence unit of green, blue three primary colours, each luminescence unit are respectively provided with a light-emitting surface, and the light that three luminescence units are sent converges at
One convergent point；Optical grating construction is arranged at the convergent point of three luminescence units, which has one first semiconductor
Layer, an active layer and one second semiconductor layer, the first semiconductor layer, active layer and the second semiconductor layer are stacked gradually and set
Put, optical grating construction has a light-emitting surface and multiple incidence surfaces intersected with light-emitting surface, the light-emitting surface face of each luminescence unit
The incidence surface of the optical grating construction, the light-emitting surface of optical grating construction are arranged on surface of second semiconductor layer away from active layer.The party
Method structure is cumbersome and technics comparing is complicated, therefore to take a long time in the production process, this will cause white light LEDs cost
It is high.
A kind of white light LEDs of unstressed configuration powder, are to grow luminous two on a sapphire substrate disclosed in CN102290508A
Pole pipe；The ion implanting that relevant colors shine is carried out during light emitting diode is grown.Pass through shining for light emitting diode
The ion of excitation injection sends the light of corresponding color, and a variety of light mixing generation white lights, realize that single device of unstressed configuration powder is white
Light emitting diode.This method technique realization on it is more complicated and carry out get up it is more difficult, technology difficulty and cost has been significantly greatly increased.
A kind of broad-spectrum white-light LED structure and growing method disclosed in CN101714604A.The structure includes：In sapphire
On substrate or silicon substrate growth with GaN cushions, thickness 50-2000nm GaN supporting layers, thickness be 20-1000nm N
Type GaN, concentration 5*1018cm-1；Blue light wavelength quantum-well materials, bluish-green or green quantum trap material are once grown on N-type GaN
Material and reddish yellow light or red quantum trap material.The color sent by three kinds of different quantum-well materials obtains one after being overlapped
Three color GaN base white-light LED structures of kind.This method utilizes MOCVD（ Metal Organic Chemical Vapour
Deposition, metal-organic chemical vapor deposition equipment）The growth procedure of long period is carried out, MOCVD device price is extremely high
Expensive, prolonged growth adds ratio of the equipment depreciation in monolithic epitaxial wafer cost.
The content of the invention
The present invention is for insufficient existing for the technology of preparing of existing white light LEDs, there is provided a kind of to be carried out without using fluorescent powder
Secondary quantum conversion, light energy use efficiency and service life height, stability of photoluminescence and good repetitiveness, the nothing with high-luminous-efficiency
Fluorescent powder GaN base white light LEDs epitaxial structure, while a kind of preparation method of the unstressed configuration powder white light LEDs is provided.
The unstressed configuration powder GaN base white light LEDs epitaxial structure of the present invention, including the substrate, the GaN that set gradually from bottom to top delay
Rush layer, N-GaN layers, the multiple quantum well layer of ultraviolet wavelength, non-mix high/low temperature GaN layer, the multiple quantum well layer and P- of blue light wavelength
GaN layer.
The substrate is sapphire, silicon or SiC substrate.
3-10 μm of the thickness of the GaN cushions.
Thickness N-GaN layers described is 2 μm -4 μm, doping concentration 3*1018cm-1—2*1019cm-1。
It is described it is non-mix high/low temperature GaN layer include it is non-mix low-temperature gan layer and it is non-mix high-temperature gan layer, thickness is 50-200nm.
The multiple quantum well layer of the ultraviolet wavelength is the In that thickness is 2.5-5nmxGa1-xN well layer and thickness are 8-10nm
AlxGa1-xPeriodically alternately superposition is formed N barrier layer, and in cycle 5-15, the accounting of In is 10%-20%, and the accounting of Al is 2%-
8%。
The multiple quantum well layer of the blue light wavelength is the In that thickness is 2.5-5nmxGa1-xN well layer and thickness are 8-15nm's
Periodically alternately superposition is formed GaN barrier layer, and in cycle 5-15, the accounting of In is 10%-20%.
Thickness P-GaN layers described is 150-300nm.
The preparation method of the epitaxial structure of above-mentioned unstressed configuration powder white light LEDs, comprises the following steps：
（1）In MOCVD device, first to substrate under 1000-1100 DEG C of hydrogen environment（Sapphire, silicon or SiC）Carry out
HIGH TEMPERATURE PURGE；Temperature is adjusted again as 500-650 DEG C, grows the GaN cushions of 3-10 μ m-thicks on substrate；
（2）It is passed through the NH that flow is 30-100L/ minutes3, the time is passed through as -5 minutes 2 minutes；Adjust MOCVD reative cells
Temperature is 1000-1200 DEG C, the N-GaN layers of 2 μm of -4 μ m-thick of direct growth, doping concentration 3*10 on GaN cushions18cm-1—2*1019cm-1；
（3）The multiple quantum well layer of ultraviolet wavelength is grown on N-GaN layers, is specifically grown at a temperature of 750-850 DEG C
Thickness is the In of 2.5-5nmxGa1-xN well layer, growth thickness is the Al of 8-10nm at a temperature of 800-900 DEG CxGa1-xN barrier layer, Al
Accounting be 2%-8%, well layer and barrier layer are periodically alternately superimposed, cycle 5-15；
（4）Nitrogen buffer gas, trimethyl gallium are gallium source, and growth is non-to mix high/low temperature GaN layer, and non-high/low temperature GaN layer of mixing is divided
For it is non-mix low-temperature gan layer and it is non-mix high-temperature gan layer, thickness is 50-200nm；Grow first it is non-mix low-temperature gan layer, obtain matter
Measure poor GaN layer so that ultraviolet excitation goes out the yellow luminescence of maximum, then grow it is non-mix high-temperature gan layer, to be follow-up blue
Light multiple quantum wells provides cushion；The growth temperature of the non-doped gan layer of low temperature is 650-750 DEG C, and growth time is 100-300 seconds；
The growth temperature of the non-doped gan layer of high temperature is 850-930 DEG C, growth time 100-300 seconds；
（5）The multiple quantum well layer of blue light wavelength is grown in non-doped gan layer, it is raw specifically at a temperature of 700-800 DEG C
Long thickness is the In of 2.5-5nmxGa1-xN well layer, growth thickness is the GaN barrier layer of 8-15nm at a temperature of 800-900 DEG C, well layer
Periodically alternately it is superimposed with barrier layer, cycle 5-15；
（6）At a temperature of 800-900 DEG C, growth thickness is 150-300nm's on the multiple quantum well layer of blue light wavelength
P-GaN layers.
The above method uses MOCVD methods, and ultraviolet light multi-quantum pit structure, non-is grown in sapphire, Si or SiC substrate
High/low temperature GaN layer and blue light multi-quantum pit structure are mixed, the ultraviolet excitation low temperature for borrowing bottom ultraviolet light multiple quantum wells part is non-
The yellow luminescence of doped gan layer, and be combined in the blue light that sends of blue light multi-quantum pit structure of top layer so as to launch white light, this
A kind of epitaxial structure of unstressed configuration powder white light LEDs of sample not only increases the luminous efficiency of white light LEDs, simplifies processing step, and
MOCVD program times are saved, improve utilization rate of equipment and installations, reduce the cost of GaN base white light LEDs.
The present invention extends complete white-light LED structure using MOCVD technologies are directly outer, rather than is sent out by excitated fluorescent powder
Light further obtains white light, effectively simplifies technique, improves the light conversion efficiency of white light LEDs, not only shorten technique
Preparation time, reduces process costs, while also substantially increases the luminous efficiency of GaN base LED.
White light LEDs prepared by the present invention, without fluorescent powder, improve LED energy conversion efficiencies and service life, improve outgoing
Quality, stability of photoluminescence and the product repeatability of light；Emergent light by ultraviolet excitation intermediate layer low-temperature epitaxy GaN layer yellowish leukorrhea
Shine, and mixed with blue light, improve the colour rendering index of white light LEDs, reduce its colour temperature.
Brief description of the drawings
Fig. 1 is the schematic diagram of the epitaxial structure of unstressed configuration powder white light LEDs of the present invention.
In figure：1st, substrate, 2, GaN cushions, 3, N-GaN layers, 4, the multiple quantum well layer of ultraviolet wavelength, 5, non-mix height
Warm GaN layer, 6, the multiple quantum well layer of blue light wavelength, 7, P-GaN layers.
Embodiment
Embodiment 1
As shown in Figure 1, the epitaxial structure of the unstressed configuration powder GaN base white light LEDs of the present invention, including set gradually from bottom to top
Substrate 1, GaN cushions 2, N-GaN layers 3, ultraviolet wavelength multiple quantum well layer 4, non-mix high/low temperature GaN layer 5, blue light wavelength
Multiple quantum well layer 6 and P-GaN layers 7.
Substrate 1 is Sapphire Substrate in the present embodiment.3 μm of the thickness of GaN cushions 2.The thickness of N-GaN layers 3 is 2 μm,
Doping concentration is 3*1018cm-1.The multiple quantum well layer 4 of ultraviolet wavelength is 5 cycles that thickness is respectively 2.5nm and 8nm
InGaN/AlGaN multi-quantum pit structures, gallium source used are dimethyl gallium.The non-gallium source mixed in high/low temperature GaN layer 5 is trimethyl
Gallium, the non-low-temperature gan layer and the non-thickness for mixing high-temperature gan layer of mixing is 50nm.The multiple quantum well layer 6 of blue light wavelength is thickness
The InGaN well layer and thickness of 2.5nm is the multi-quantum pit structure in 5 cycles of GaN barrier layer of 8nm.The thickness of P-GaN layers 7 is
150nm。
The preparation method of the GaN base white light LEDs epitaxial structure of above-mentioned unstressed configuration powder, comprises the following steps：
（1）In MOCVD device, HIGH TEMPERATURE PURGE is first carried out under 1000 DEG C of hydrogen environments to the Sapphire Substrate of growth,
The GaN cushions 2 of 3um are grown under 500 DEG C of scopes again；
（2）It is passed through the NH that flow is 30L/min3, it is 5min to be passed through the time；MOCVD reaction indoor temperatures are 1000 DEG C,
The N-GaN layers 3 of 2 μ m-thick of direct growth, doping concentration 3*10 on GaN cushions18cm-1；
（3）The multiple quantum well layer 4 of ultraviolet wavelength, the growth thickness specifically at a temperature of 750 DEG C are grown on N-GaN layers
For the InGaN well layer of 2.5nm, growth thickness is the AlGaN barrier layer of 8nm at a temperature of 800 DEG C, and the accounting of In is 10%, Al's
Accounting is 2%, and well layer and barrier layer are periodically alternately superimposed, and the cycle is 5, and gallium source used is dimethyl gallium；
The multiple quantum well layer of the ultraviolet wavelength is the In that thickness is 2.5-5nmxGa1-xN well layer and thickness are 8-10nm
AlxGa1-xPeriodically alternately superposition is formed N barrier layer, cycle 5-15.
（4）Nitrogen buffer gas, trimethyl gallium are gallium source, and growth is non-to mix high/low temperature GaN layer, and non-high/low temperature GaN layer of mixing is divided
For it is non-mix low-temperature gan layer and it is non-mix high-temperature gan layer, thickness is 50nm；Grow first it is non-mix low-temperature gan layer, obtain quality compared with
The GaN layer of difference, low temperature and trimethyl gallium source can increase the phosphorus content of GaN layer, so as to farthest make ultraviolet excitation
Go out its maximum yellow luminescence, and finally finally launch white light with reference to the blue light that the blue light multiple quantum wells is sent；It is then raw
Length is non-to mix high-temperature gan layer, and cushion is provided for follow-up blue light multiple quantum wells.
The growth temperature of the non-doped gan layer of low temperature is 650 DEG C, and growth time is 100 seconds；The growth temperature of the non-doped gan layer of high temperature
Spend for 850 DEG C, growth time 100 seconds.
（5）The multiple quantum well layer 6 of blue light wavelength is grown in non-doped gan layer, is grown specifically at a temperature of 700 DEG C thick
Spend the InGaN well layer for 2.5nm, growth thickness is the GaN barrier layer of 8nm at a temperature of 800 DEG C, and the accounting of In is 10, well layer and
Barrier layer is periodically alternately superimposed, the cycle 5；
（6）At a temperature of 800 DEG C, growth thickness is the P-GaN layers of 150nm on the multiple quantum well layer 6 of blue light wavelength
7。
Embodiment 2
Substrate 1 is Si substrates in the present embodiment.6 μm of the thickness of GaN cushions 2.N-GaN layer thickness 3 is 3 μm, doping
Concentration is 9*1018cm-1.The multiple quantum well layer 4 of ultraviolet wavelength be thickness be respectively 4nm and 9nm 10 cycles InGaN/
AlGaN multi-quantum pit structures, gallium source used are dimethyl gallium.The non-gallium source mixed in high/low temperature GaN layer 5 is trimethyl gallium, non-to mix
Low-temperature gan layer and the non-thickness for mixing high-temperature gan layer are 120nm.The multiple quantum well layer 6 of blue light wavelength is the InGaN of thickness 4nm
Well layer and thickness are the multi-quantum pit structure in 10 cycles of GaN barrier layer of 12nm.The thickness of P-GaN layers 7 is 220nm.
The preparation method of above-mentioned unstressed configuration powder GaN base white light LEDs epitaxial structure, comprises the following steps：
（1）In MOCVD device, HIGH TEMPERATURE PURGE is first carried out under 1050 DEG C of hydrogen environments to the silicon substrate of growth, then
The GaN cushions 2 of 5um are grown under 590 DEG C of scopes；
（2）It is passed through the NH that flow is 65L/min3, it is 3.5min to be passed through the time；MOCVD reaction indoor temperatures are 1100
DEG C, the N-GaN layers 3 of 3 μ m-thick of direct growth, doping concentration 9*10 on GaN cushions18cm-1；
（3）The multiple quantum well layer 4 of ultraviolet wavelength, the growth thickness specifically at a temperature of 800 DEG C are grown on N-GaN layers
For the InGaN well layer of 4nm, growth thickness is the AlGaN barrier layer of 9nm at a temperature of 850 DEG C, and the accounting of In is the accounting of 15%, Al
For 5%, well layer and barrier layer are periodically alternately superimposed, and the cycle is 10, and gallium source used is dimethyl gallium；
（4）Nitrogen buffer gas, trimethyl gallium are gallium source, and growth is non-to mix high/low temperature GaN layer 5, wherein non-mix low-temperature gan layer
It is 120nm with non-high-temperature gan layer thickness of mixing；Grow first it is non-mix low-temperature gan layer, growth temperature is 700 DEG C, and growth time is
200 seconds；Then grow it is non-mix high-temperature gan layer, growth temperature is 880 DEG C, growth time 200 seconds.
（5）The multiple quantum well layer of blue light wavelength is grown in non-doped gan layer, is grown specifically at a temperature of 750 DEG C thick
Spend the InGaN well layer for 4nm, growth thickness is the GaN barrier layer of 12nm at a temperature of 850 DEG C, and the accounting of In is 15%, well layer and
Barrier layer is periodically alternately superimposed, the cycle 10；
（6）At a temperature of 870 DEG C, growth thickness is the P-GaN layers of 220nm on the multiple quantum well layer 6 of blue light wavelength
7。
Embodiment 3
Substrate 1 is SiC substrate in the present embodiment.10 μm of the thickness of GaN cushions 2.N-GaN layer thickness 3 is 4 μm, doping
Concentration is 2*1019cm-1.The multiple quantum well layer 4 of ultraviolet wavelength is 12 cycles that thickness is respectively 5nm and 10nm
InGaN/AlGaN multi-quantum pit structures.The non-gallium source mixed in high/low temperature GaN layer 5 is trimethyl gallium, the non-low-temperature gan layer and non-of mixing
The thickness for mixing high-temperature gan layer is 200nm.The multiple quantum well layer 6 of blue light wavelength is the InGaN well layer of thickness 5nm and thickness is
The multi-quantum pit structure in 15 cycles of GaN barrier layer of 15nm.The thickness of P-GaN layers 7 is 300nm.
The preparation method of above-mentioned unstressed configuration powder GaN base white light LEDs epitaxial structure, comprises the following steps：
（1）In MOCVD systems, HIGH TEMPERATURE PURGE is first carried out under 1100 DEG C of hydrogen environments to the SiC substrate of growth, then
10 μm of GaN cushions 2 are grown under 650 DEG C of scopes；
（2）It is passed through the NH that flow is 100L/min3, it is 2min to be passed through the time；MOCVD reaction indoor temperatures are 1200 DEG C,
The N-GaN layers 3 of 4 μ m-thick of direct growth, doping concentration 2*10 on GaN cushions19cm-1；
（3）The multiple quantum well layer 4 of ultraviolet wavelength, the growth thickness specifically at a temperature of 850 DEG C are grown on N-GaN layers
For the InGaN well layer of 5nm, growth thickness is the AlGaN barrier layer of 10nm at a temperature of 900 DEG C, and the accounting of In is accounting for for 20%, Al
Than for 8%, well layer and barrier layer are periodically alternately superimposed, and the cycle is 15, and gallium source used is dimethyl gallium；
（4）Nitrogen buffer gas, trimethyl gallium are gallium source, and growth is non-to mix high/low temperature GaN layer 5, wherein non-mix low-temperature gan layer
It is 200nm with non-high-temperature gan layer thickness of mixing.Grow first it is non-mix low-temperature gan layer, growth temperature is 750 DEG C, and growth time is
300 seconds；Then grow it is non-mix high-temperature gan layer, growth temperature is 930 DEG C, growth time 300 seconds.
（5）The multiple quantum well layer 6 of blue light wavelength is grown in non-doped gan layer, is grown specifically at a temperature of 800 DEG C thick
Spend the InGaN well layer for 5nm, growth thickness is the GaN barrier layer of 15nm at a temperature of 900 DEG C, and the accounting of In is 20%, well layer and
Barrier layer is periodically alternately superimposed, the cycle 15；
（6）At a temperature of 900 DEG C, growth thickness is the P-GaN layers of 300nm on the multiple quantum well layer 6 of blue light wavelength
7。
Claims (2)
1. a kind of unstressed configuration powder GaN base white light LEDs epitaxial structure, it is characterized in that, including set gradually from bottom to top substrate,
GaN cushions, N-GaN layers, the multiple quantum well layer of ultraviolet wavelength, non-mix high/low temperature GaN layer, the multiple quantum well layer of blue light wavelength
And P-GaN layers；
The multiple quantum well layer of the ultraviolet wavelength is the In that thickness is 2.5-5nmxGa1-xN well layer and thickness are 8-10nm's
AlxGa1-xPeriodically alternately superposition is formed N barrier layer, and in cycle 5-15, the accounting of In is 10%-20%, and the accounting of Al is 2%-8%；
The multiple quantum well layer of the blue light wavelength is the In that thickness is 2.5-5nmxGa1-xN well layer and the GaN that thickness is 8-15nm are built
Periodically alternately superposition is formed layer, and in cycle 5-15, the accounting of In is 10%-20%.
2. the preparation method of unstressed configuration powder GaN base white light LEDs epitaxial structure described in a kind of claim 1, it is characterized in that, including with
Lower step：
（1）In MOCVD device, HIGH TEMPERATURE PURGE first is carried out to substrate under 1000-1100 DEG C of hydrogen environment；Adjusting temperature again is
500-650 DEG C, the GaN cushions of 3-10 μ m-thicks are grown on substrate；
（2）It is passed through the NH that flow is 30-100L/ minutes3, the time is passed through as -5 minutes 2 minutes；Adjusting MOCVD reaction chamber temperatures is
1000-1200 DEG C, the N-GaN layers of 2 μm of -4 μ m-thick of direct growth, doping concentration 3*10 on GaN cushions18cm-1—2*
1019cm-1；
（3）The multiple quantum well layer of ultraviolet wavelength, the growth thickness specifically at a temperature of 750-850 DEG C are grown on N-GaN layers
For the In of 2.5-5nmxGa1-xN well layer, growth thickness is the Al of 8-10nm at a temperature of 800-900 DEG CxGa1-xN barrier layer, Al's accounts for
Than being periodically alternately superimposed for 2%-8%, well layer and barrier layer, cycle 5-15；
（4）Nitrogen buffer gas, trimethyl gallium are gallium source, and growth is non-to mix high/low temperature GaN layer, it is non-mix high/low temperature GaN layer be divided into it is non-
Mix low-temperature gan layer and it is non-mix high-temperature gan layer, thickness is 50-200nm；Grow first it is non-mix low-temperature gan layer, obtain quality compared with
Difference GaN layer so that ultraviolet excitation go out maximum yellow luminescence, then grow it is non-mix high-temperature gan layer, be follow-up blue light it is more
Quantum Well provides cushion；The growth temperature of the non-doped gan layer of low temperature is 650-750 DEG C, and growth time is 100-300 seconds；High temperature
The growth temperature of non-doped gan layer is 850-930 DEG C, growth time 100-300 seconds；
（5）The multiple quantum well layer of blue light wavelength is grown in non-doped gan layer, is grown specifically at a temperature of 700-800 DEG C thick
Spend the In for 2.5-5nmxGa1-xN well layer, growth thickness is the GaN barrier layer of 8-15nm, well layer and base at a temperature of 800-900 DEG C
Layer is periodically alternately superimposed, cycle 5-15；
（6）At a temperature of 800-900 DEG C, growth thickness is the P-GaN of 150-300nm on the multiple quantum well layer of blue light wavelength
Layer.
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| CN1741290A (en) * | 2004-08-27 | 2006-03-01 | 中国科学院半导体研究所 | Blue light, gold-tinted quantum well stacked structure white light emitting diode and manufacture method |
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