CN107681027B - White light L ED and manufacturing method thereof - Google Patents
White light L ED and manufacturing method thereof Download PDFInfo
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- CN107681027B CN107681027B CN201710915561.8A CN201710915561A CN107681027B CN 107681027 B CN107681027 B CN 107681027B CN 201710915561 A CN201710915561 A CN 201710915561A CN 107681027 B CN107681027 B CN 107681027B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses a white light L ED and a preparation method thereof, and relates to the technical field of basic electric elements and preparation methods thereof.A white light L ED comprises a substrate layer, a buffer layer, an N-type layer, an active region layer and a P-type layer which are arranged from bottom to top, voltage is applied between the P-type layer and the N-type layer to realize that light emitted by the L ED is white light, and the active region layer comprises an InN layer and an In layer which are arranged from bottom to topxGa1‑ xN layer, GaN layer、AlyGa1‑yAn N layer and AlN, whereinAnd InxGa1‑xN layer and AlyGa1‑yIn the process of gradual transition of the N layers from bottom to top, the value of x is gradually reduced from 1 to 0, and the value of y is gradually increased from 0 to 1.
Description
Technical field
The present invention relates to essential electronic element and preparation method thereof technical field more particularly to a kind of white light LEDs and its systems
Make method.
Background technique
Under Global climate change and the background of energy shortage, energy saving, protection environment becomes the mainstream of current era,
Wherein seek high energy-efficient lighting source to be highly valued.White light emitting diode (light emitting diode,
LED) as a kind of novel solid light source, it is energy saving, environmentally protective, the service life is long and small in size with it many advantages, such as, partly leading
There is huge application prospect in body illumination, display and visible light communication field.
Currently, domestic and international realization white light LEDs are mainly the following approach：
(1) it uses the LED chip of ultraviolet-black light and red, green, blue three can be emitted by ultraviolet-near ultraviolet excitation
The fluorescent powder of primary colours generates polychrome mixing composition white light LEDs；
(2) blue led chip and composition white light LEDs can be combined by jaundice emitting phosphor that blue light effectively excites.Fluorescence
Powder absorbs a part of blue light, is stimulated and emits yellow light, and the yellow light of transmitting and remaining blue light finally obtain white light LEDs；
(3) using the principle of three primary colours and at present, three kinds of ultra-high brightness LEDs of fertile red, green, blue have mixed in proportion
At white.
In the first two method of white light LEDs made above, it is most important that select suitable rare earth fluorescent powder material；Third
Kind needs three chips to be synthesized.
The method of above-mentioned three kinds of acquisitions white light LEDs is required using phosphor material powder, and phosphor material powder is in the process used
In can degenerate, influence the luminous mass of LED.
Summary of the invention
The technical problem to be solved by the present invention is to how provide one kind without using phosphor material powder, the spectrum model of transmitting
Enclose wide white light LEDs.
In order to solve the above technical problems, the technical solution adopted by the present invention is that：A kind of white light LEDs, it is characterised in that：Packet
The substrate layer being arranged from top to bottom, buffer layer, N-type layer, active region layer and P-type layer are included, by between P-type layer and N-type layer
Making alive realizes that light that the LED is emitted is white light, the active region layer include the InN layer being arranged from top to bottom,
InxGa1-xN layers, GaN layer, AlyGa1-yN layers and AlN, wherein, and InxGa1-xN layers and
AlyGa1-yN layers from top to bottom during gradual change, the value that the value of x is gradually reduced to 0, y from 1 progressively increases to 1 from 0.
Preferably, the material of the substrate layer is SiC or sapphire.
Preferably, the material of the buffer layer is AlN.
Preferably, the material of the N-type layer is the GaN of n-type doping.
Preferably, the making material of the P-type layer is p-type GaN.
Correspondingly, the invention also discloses a kind of production methods of white light LEDs, it is characterised in that include the following steps：
Firstly, the epitaxial growth buffer on substrate layer, epitaxial growth N-type layer on the buffer layer, in N-type layer successively from
Under to upper epitaxial growth InN layers, InxGa1-xN layers, GaN layer, AlyGa1-yN layers and AlN layers, by InN layer epitaxially grown InxGa1-xN
Layer is transitioned into GaN layer, and wherein Ga component is gradient to 1 from 0, by GaN layer epitaxial growth AlyGa1-yN layers are transitioned into AlN layers, wherein
Al component is gradient to 1 from 0；The finally epitaxial growth P-type layer on AlN layer.
Preferably, InN layers to AlN layers of the overall thickness is 5nm to 1000nm.
Generated beneficial effect is by adopting the above technical scheme：The material structure of active area is not in the white light LEDs
It is same as traditional quantum well structure, the method that active area uses graded component polarization induced doping in herein described white light LEDs
It is grown, it is overall, in the application, active area materials InN-InxGayN-GaN-AlyGaxN-AlN, wherein, GaN, regrowth AlGaN, Al are transitioned into from InN Material growth InGaN, Ga content gradually variational
Content gradually variational is transitioned into AlN, and the forbidden bandwidth of material realizes the gradual change from 0.6eV to 6.2eV, under the conditions of electrical pump,
The sun visible light continuous spectrum of 380nm to 780nm can be covered.
To sum up, herein described white light LEDs do not need phosphor material powder, avoid because fluorescent powder is degenerated to luminous mass
It influences.The spectral region emitted covers entire sunlight visible spectrum, by during the growth process to different in active area
The control of nitride material thickness, better simulated solar irradiation, so that lighting environment is more comfortable.Therefore, the present invention can answer
The fields such as show for white-light illuminating, white light.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural schematic diagram of white light LEDs described in the embodiment of the present invention；
Wherein：101, substrate layer 102, buffer layer 103, N-type layer 104, InN layer 105, InxGa1-xN layer 106, GaN layer
107、AlyGa1-yN layer 108, AlN109, P-type layer.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
As shown in Figure 1, the embodiment of the invention discloses a kind of white light LEDs, including be arranged from top to bottom substrate layer 101,
Buffer layer 102, N-type layer 103, active region layer and P-type layer 109, it is real by the making alive between P-type layer 109 and N-type layer 103
The light that the existing LED is emitted is white light.The active region layer includes InN layer 104, the In being arranged from top to bottomxGa1-xN layers
105, GaN layer 106, AlyGa1-yN layer 107 and AlN108, wherein, and InxGa1-xN layers
105 and AlyGa1-yFrom top to bottom during gradual change, the value that the value of x is gradually reduced to 0, y from 1 progressively increases to N layer 107 from 0
1。
The material structure of active area is different from traditional quantum well structure in the white light LEDs, and active area is adopted in the application
It is grown with the method for graded component polarization induced doping, it is overall, in the application, active area materials InN-InxGayN-
GaN-AlxGayN-AlN, wherein, it is transitioned into from InN Material growth InGaN, Ga content gradually variational
GaN, regrowth AlGaN, Al content gradually variational are transitioned into AlN, and the forbidden bandwidth of material realizes the gradual change from 0.6eV to 6.2eV,
Under the conditions of electrical pump, the sun visible light continuous spectrum of 380nm to 780nm can be covered.
To sum up, herein described white light LEDs do not need phosphor material powder, avoid because fluorescent powder is degenerated to luminous mass
It influences.The spectral region emitted covers entire sunlight visible spectrum, by during the growth process to different in active area
The control of nitride material thickness, better simulated solar irradiation, so that lighting environment is more comfortable.Therefore, the present invention can answer
The fields such as show for white-light illuminating, white light.
Preferably, the making material of the substrate layer 101 is SiC or sapphire.The making material of the buffer layer 102
For AlN.The making material of the N-type layer 103 is the GaN of n-type doping.The making material of the P-type layer 109 is p-type GaN.It needs
It is noted that the concrete form of the substrate layer 101, buffer layer 102, N-type layer 103 and P-type layer 109 can also be other
Type, those skilled in the art can make appropriate choice according to actual needs, and this will not be repeated here.
Corresponding with the white light LEDs, the embodiment of the invention also discloses a kind of production methods of white light LEDs, including
Following steps：
Firstly, the epitaxial growth buffer 102 on substrate layer 101, the epitaxial growth N-type layer 103 on buffer layer 102, in N
Successively epitaxial growth InN layer 104, In from top to bottom on type layer 103xGa1-xN layer 105, GaN layer 106, AlyGa1-y107 He of N layer
AlN layer 108, by 104 epitaxial growth In of InN layerxGa1-xN layer 105 is transitioned into GaN layer 106, and wherein Ga component is gradient to 1 from 0,
By 106 epitaxial growth Al of GaN layeryGa1-yN layer 107 is transitioned into AlN layer 108, and wherein Al component is gradient to 1 from 0；Finally in AlN
Epitaxial growth P-type layer on layer.
In the white light LEDs prepared by the method, the material structure of active area is different from traditional quantum well structure, this
Apply for that active area is grown using the method for graded component polarization induced doping in the white light LEDs, overall, the application
In, active area materials InN-InxGayN-GaN-AlyGaxN-AlN, wherein, from InN material
InGaN is grown, Ga content gradually variational is transitioned into GaN, and regrowth AlGaN, Al content gradually variational is transitioned into AlN, the forbidden bandwidth of material
The gradual change from 0.6eV to 6.2eV is realized, under the conditions of electrical pump, the sun visible light of 380nm to 780nm can be covered
Continuous spectrum.
To sum up, the white light LEDs prepared by the method, do not need phosphor material powder, avoid because of fluorescent powder degeneration pair
The influence of luminous mass.The spectral region emitted covers entire sunlight visible spectrum, by during the growth process to having
The control of different nitride material thickness, better simulated solar irradiation, so that lighting environment is more comfortable in source region.Therefore, originally
The fields such as invention can be applied to white-light illuminating, white light is shown.
Preferably, InN layers to AlN layers of the overall thickness is 5nm to 1000nm.The making material of the substrate layer 101
For SiC or sapphire.The making material of the buffer layer 102 is AlN.The making material of the N-type layer 103 is n-type doping
GaN.The making material of the P-type layer 109 is p-type GaN.It should be noted that the substrate layer 101, buffer layer 102, N-type
The specific thickness of layer 103 and P-type layer 109, those skilled in the art can carry out adjustment appropriate according to actual needs, herein
It does not repeat them here.
Claims (7)
1. a kind of white light LEDs, it is characterised in that：Including substrate layer (101), the buffer layer (102), N-type layer being arranged from top to bottom
(103), active region layer and P-type layer (109), by the making alive between P-type layer (109) and N-type layer (103), described in realization
The light that LED is emitted is white light, and the active region layer includes InN layer (104), the In being arranged from top to bottomxGa1-xN layers (105),
GaN layer (106), AlyGa1-yN layers (107) and AlN (108), wherein x+y=1,0≤x≤1,0≤y≤1, and InxGa1-xN layers
(105) and AlyGa1-yN layers (107) from top to bottom during gradual change, the value that the value of x is gradually reduced to 0, y from 1 gradually increases from 0
It is added to 1.
2. white light LEDs as described in claim 1, it is characterised in that：The making material of the substrate layer (101) be SiC or
Sapphire.
3. white light LEDs as described in claim 1, it is characterised in that：The making material of the buffer layer (102) is AlN.
4. white light LEDs as described in claim 1, it is characterised in that：The making material of the N-type layer (103) is n-type doping
GaN。
5. white light LEDs as described in claim 1, it is characterised in that：The making material of the P-type layer (109) is p-type GaN.
6. a kind of preparation method of white light LEDs, it is characterised in that include the following steps：
Firstly, the epitaxial growth buffer (102) on substrate layer (101), the epitaxial growth N-type layer on buffer layer (102)
(103), successively epitaxial growth InN layers of (104), the In from top to bottom on N-type layer (103)xGa1-xN layers of (105), GaN layer
(106)、AlyGa1-yN layers (107) and AlN layers (108), by InN layers of (104) epitaxial growth InxGa1-xIt is transitioned into GaN for N layers (105)
Layer (106), wherein Ga component is gradient to 1 from 0, by GaN layer (106) epitaxial growth AlyGa1-yIt is transitioned into AlN layers for N layers (107)
(108), wherein Al component from 0 is gradient to 1, and x+y=1；The finally epitaxial growth P-type layer on AlN layer.
7. the preparation method of white light LEDs as claimed in claim 6, it is characterised in that：InN layers to AlN layers of the overall thickness
For 5nm to 1000nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710915561.8A CN107681027B (en) | 2017-09-30 | 2017-09-30 | White light L ED and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710915561.8A CN107681027B (en) | 2017-09-30 | 2017-09-30 | White light L ED and manufacturing method thereof |
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| CN107681027B true CN107681027B (en) | 2018-11-20 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442984B (en) * | 2000-07-05 | 2001-06-23 | Epistar Corp | Mixed-color light emitting diode |
| US7271418B2 (en) * | 2004-09-24 | 2007-09-18 | National Central University | Semiconductor apparatus for white light generation and amplification |
| CN102231422A (en) * | 2011-06-16 | 2011-11-02 | 清华大学 | Fluorescent-powder-free single-chip GaN (gallium nitride)-based LED (light-emitting diode) and manufacturing method thereof |
| CN104868027A (en) * | 2015-05-29 | 2015-08-26 | 山东浪潮华光光电子股份有限公司 | Phosphor-free GaN-based white light LED epitaxial structure and preparation method thereof |
-
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- 2017-09-30 CN CN201710915561.8A patent/CN107681027B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442984B (en) * | 2000-07-05 | 2001-06-23 | Epistar Corp | Mixed-color light emitting diode |
| US7271418B2 (en) * | 2004-09-24 | 2007-09-18 | National Central University | Semiconductor apparatus for white light generation and amplification |
| CN102231422A (en) * | 2011-06-16 | 2011-11-02 | 清华大学 | Fluorescent-powder-free single-chip GaN (gallium nitride)-based LED (light-emitting diode) and manufacturing method thereof |
| CN104868027A (en) * | 2015-05-29 | 2015-08-26 | 山东浪潮华光光电子股份有限公司 | Phosphor-free GaN-based white light LED epitaxial structure and preparation method thereof |
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Effective date of registration: 20181011 Address after: 519060 north side of No. 8, Ping Gong two road, Nanping Science and Technology Industrial Park, Zhuhai, Guangdong, China. Applicant after: Zhuhai grand optical illumination equipment Co., Ltd Address before: 071400 North Sha Kou village, Xingxing Town, Lixian County, Baoding, Hebei Applicant before: Meng Zhaoyang |
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Address after: 519000 north side of 2nd floor, No.8 pinggong 2nd Road, Nanping Science and Technology Industrial Park, Zhuhai City, Guangdong Province Patentee after: Zhuhai Hongguang Semiconductor Co.,Ltd. Address before: 519060 north side of No. 8, Ping Gong two road, Nanping Science and Technology Industrial Park, Zhuhai, Guangdong, China. Patentee before: ZHUHAI HONGGUANG LIGHTING FIXTURE CO.,LTD. |