CN207909908U - Uv led - Google Patents
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- CN207909908U CN207909908U CN201820249131.7U CN201820249131U CN207909908U CN 207909908 U CN207909908 U CN 207909908U CN 201820249131 U CN201820249131 U CN 201820249131U CN 207909908 U CN207909908 U CN 207909908U
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- light emitting
- mqw light
- led
- stress regulating
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- 230000001105 regulatory effect Effects 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model provides a kind of UV LED, and UV LED includes：Buffer layer；N-layer is located on the buffer layer；Stress regulating layer is located in the n-layer；Mqw light emitting layer is located on the stress regulating layer；And p-type layer, it is located on the mqw light emitting layer；The material that the stress regulating layer is less than the n-layer, the mqw light emitting layer and the p-type layer by lattice constant is constituted, to the warpage of UV LED epitaxial structure described in modulation.The utility model introduces Al between the n-layer and mqw light emitting layer of epitaxial structurexGayIn1‑x‑yN stress regulating layers adjust component Al to 70% or more, it is possible to reduce warpage when subsequent growth mqw light emitting layer, and improve the surface temperature uniformity of the quantum trap luminous layer simultaneously, and then promote epitaxial structure emission wavelength uniformity.
Description
Technical field
The utility model belongs to semiconductor lighting devices design and manufacturing field, more particularly to a kind of two pole of ultra-violet light-emitting
Pipe.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.It is this
Electronic component occurred early in 1962, can only send out the feux rouges of low luminosity in early days, develop other monochromatic versions later, when
The light that can be sent out to today has spread visible light, infrared ray and ultraviolet light, and luminosity is also increased to comparable luminosity.And purposes also by
It is used as indicator light, display board etc. at the beginning；With being constantly progressive for technology, light emitting diode be widely used in display,
Television set daylighting is decorated and illumination.
UV LED (UV Light Emitting Diode, UV-LED), which is one kind, directly to be turned electric energy
Turn to the solid state semiconductor devices of ultraviolet light.With the development of technology, UV LED is in biologic medical, anti-fake mirror
Fixed, purification (water, air etc.) field, computer data storage and military affairs etc. have wide market application prospect.Except this
Except, ultraviolet LED is also increasingly paid close attention to by illumination market.Because exciting three primary colors fluorescent powder by ultraviolet LED, can obtain
Obtain the white light of general lighting.
UV LED progresses greatly with technology with product power ascension in recent years, in addition long lifespan, small etc. are excellent
Gesture has gradually replaced the mercury lamp of lower-wattage.Mercury is prohibited in the world simultaneously《Minamata pact》It will come into force in the year two thousand twenty, this policy will
Accelerate the arrival of UV LED scale application.
As shown in Figure 1 to 4, the manufacturing process of deep-UV light-emitting diode structure generally includes at present：
1) substrate 101 is provided, as shown in Figure 1.
2) in forming AlN buffer layers 102 on substrate 101, as shown in Figure 2.
3) in forming N-shaped AlGaN layer 103 on AlN buffer layers 102, as shown in Figure 3.
4) mqw light emitting layer 104 is formed in N-shaped AlGaN layer 103, and in forming p-type on mqw light emitting layer 104
AlGaN layer 105, as shown in Figure 4.
As shown in figure 3, since N-shaped AlGaN layer 103 is grown on AlN buffer layers 102, lattice mismatch can make N-shaped AlGaN
Layer 103 is by very big compression (compressive strain), so that convex shape (convex is presented in epitaxial structure warpage
Profile), surface temperature is uneven when mqw light emitting layer 104 being caused to grow, and influences wavelength uniformity.
Based on the above, provide a kind of UV LED that can effectively prevent UV LED warpage and
Its production method is necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of UV LEDs
And preparation method thereof, for solving the problems, such as that UV LED is easy to happen warpage in the prior art.
In order to achieve the above objects and other related objects, the utility model provides a kind of UV LED, including：It is slow
Rush layer；N-layer is located on the buffer layer；Mqw light emitting layer is located in the n-layer；And p-type layer, it is located at described
On mqw light emitting layer；The UV LED further includes stress regulating layer, position include be located in the n-layer,
One kind between the n-layer and the mqw light emitting layer and in the mqw light emitting layer；It is described to answer
The material that power regulating layer is less than the n-layer, the mqw light emitting layer and the p-type layer by lattice constant is constituted, to adjust
Become the warpage of the UV LED epitaxial structure.
Preferably, the material of the stress regulating layer includes AlxGayIn1-x-yN, wherein x >=70%, y >=0, x+y≤1.
Preferably, the emission wavelength of the mqw light emitting layer is between 210nm~320nm.
Preferably, the stress regulating layer is reducing the convexity warp of the UV LED epitaxial structure.
Further, the buffer layer includes AlN layers, and the n-layer includes N-shaped AlGaN layer.
Preferably, the stress regulating layer is one-component layer structure, and thickness is between an atomic layer level thickness to 100nm
Between.
Preferably, the stress regulating layer is in direct contact the n-layer and the mqw light emitting layer.
Preferably, the stress regulating layer adulterates for N-shaped, and doping concentration is 1 × 1017~5 × 1019cm-3。
Preferably, the UV LED further includes electronic barrier layer, and the electronic barrier layer is located at the quantum
Between trap luminescent layer and the p-type layer.
The utility model also provides a kind of production method of UV LED, including step：1) substrate is provided, in
Buffer layer and n-layer are formed on the substrate, the buffer layer and the n-layer have warpage；2) in shape in the n-layer
At stress regulating layer, with buffer layer described in modulation and the warpage of the n-layer；3) in forming Quantum Well on the stress regulating layer
Luminescent layer；And 4) in forming p-type layer on the mqw light emitting layer；Wherein, the stress regulating layer is less than by lattice constant
The material of the n-layer, the mqw light emitting layer and the p-type layer is constituted.
Preferably, the material of the stress regulating layer includes AlxGayIn1-x-yN, wherein x >=70%, y >=0, x+y≤1.
Preferably, the flow control in the sources Al, the sources Ga and the sources In that the lattice constant of the stress regulating layer is passed through by growth
System.
Preferably, the emission wavelength of the mqw light emitting layer is between 210nm~320nm.
Preferably, in step 2), the growth temperature of the stress regulating layer is between 1100 DEG C~1300 DEG C.
Preferably, the warpage of the step 1) buffer layer and the n-layer is convexity warp, step 2) the stress regulating layer
To reduce the convexity warp of buffer layer and the n-layer.
Further, the buffer layer includes AlN layers, and the n-layer includes N-shaped AlGaN layer.
Preferably, the stress regulating layer is one-component layer structure, and thickness is between an atomic layer level thickness to 100nm
Between.
Preferably, the stress regulating layer is in direct contact the n-layer and the mqw light emitting layer.
Preferably, the stress regulating layer adulterates for N-shaped, and doping concentration is 1 × 1017~5 × 1019cm-3。
Preferably, further include the steps that forming electronic barrier layer between step 3) and step 4).
As described above, the UV LED and preparation method thereof of the utility model, has the advantages that：
The utility model is directed to UV LED, especially needle deep-UV light-emitting diode, in the N-shaped of epitaxial structure
Al is introduced between layer and mqw light emitting layerxGayIn1-x-yComponent Al is adjusted to 70% or more, can be subtracted by N stress regulating layers
Warpage when few subsequent growth mqw light emitting layer, and improve the surface temperature uniformity of the quantum trap luminous layer simultaneously, in turn
Promote epitaxial structure emission wavelength uniformity.
Description of the drawings
Fig. 1~Fig. 4 is shown as the structure that each step of production method of UV LED in the prior art is presented
Schematic diagram, epitaxial structure have more serious warping phenomenon.
Fig. 5~Fig. 9 is shown as the structure that each step of production method of the UV LED of the utility model is presented
Wherein, Fig. 9 is shown as the structural schematic diagram of the UV LED of the utility model to schematic diagram, and the utility model can effectively change
The warping phenomenon of kind epitaxial structure.
Figure 10 is shown as the step flow diagram of the production method of the UV LED of the utility model.
Figure 11 is shown as the scanning electron microscope (SEM) photograph of the UV LED of the utility model.
Component label instructions
201 substrates
202 buffer layers
203 n-layers
204 stress regulating layers
205 mqw light emitting layers
206 electronic barrier layers
207 p-type layers
S11~S14 steps
Specific implementation mode
Illustrate that the embodiment of the utility model, those skilled in the art can be by this theorys below by way of specific specific example
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific implementation modes are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 5~Figure 11.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, when only display is with related component in the utility model rather than according to actual implementation in illustrating then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 5~Figure 11, the present embodiment provides a kind of production methods of UV LED, including step：
As shown in Fig. 5~Fig. 7, step 1) S11 is carried out first, a substrate 201 is provided, it is slow in being formed on the substrate 201
Layer 202 and n-layer 203 are rushed, the buffer layer 202 and the n-layer 203 have warpage.
In the present embodiment, the substrate 201 is Sapphire Substrate, and the Sapphire Substrate can be flat sheet type sapphire
Substrate or graphical sapphire substrate, it is of course also possible to select other kinds of substrate according to different demand, as Si substrates,
SiC substrates, GaN substrate etc., and it is not limited to example recited herein.
It is described using chemical vapor deposition method in 201 buffer layer 202 of the substrate in MOCVD epitaxy equipment
The material of buffer layer 202 can be AlN etc., at this point, the substrate 201 and the buffer layer are in concave warp, as shown in fig. 6, so
Use chemical vapour deposition technique in depositing n-type layer 203 on the buffer layer 202 afterwards, the material of the n-layer 203 can be N-shaped
AlGaN etc..Since N-shaped AlGaN layer is grown on AlN buffer layers 202, lattice mismatch can be such that AlGaN layers of N-shaped is greatly pressed
Stress, so that convex shape namely the buffer layer 202 and the n is presented in the epitaxial structure warpage transformation for being in before concave warp
The warpage of type layer 203 is convexity warp.If the direct grown quantum well layer in the n-layer 203 with warpage, since warpage causes
Height is inconsistent everywhere for n-layer 203, and making the growth temperature of mqw light emitting layer 205 that its surface grows, there are larger
Deviation leads to emission wavelength uniformity degradation.
As shown in figure 8, step 2) S12 is then carried out, in forming stress regulating layer 204 in the n-layer 203, with modulation
The warpage of the buffer layer 202 and the n-layer 203.
In MOCVD epitaxy equipment, using chemical vapor deposition method in formation stress regulating layer in the n-layer 203
204, the growth temperature of the stress regulating layer 204 is between 1100 DEG C~1300 DEG C.
In order to obtain preferable warpage modulation effect, the stress regulating layer 204 is less than the n-layer by lattice constant
203, the mqw light emitting layer 205 of subsequent growth and the material of p-type layer 207 are constituted, and are less than the n-layer using lattice constant
The 203 stress regulating layer 204 can reduce buffer layer 202 and the convexity warp of the n-layer 203, such as Fig. 7 institutes
Show, each epitaxial layer by modulation is in a plane substantially, and the surface temperature that can be effectively improved follow-up quantum trap luminous layer is uniform
Property, and then promote epitaxial structure emission wavelength uniformity.
Preferably, the material of the stress regulating layer 204 includes AlxGayIn1-x-yN, wherein x >=70%, y >=0, x+y≤
1, preferably, x >=95%, the lattice constant of the stress regulating layer 204 is by the stream for growing the sources Al, the sources Ga and the sources In that are passed through
Amount control, for example, the material of the stress regulating layer 204 can be Al0.7Ga0.2In0.1N、Al0.75Ga0.2In0.05N、
Al0.8Ga0.15In0.05N、Al0.85Ga0.1In0.05N、Al0.9Ga0.05In0.05N、Al0.95Ga0.05In0.05N、Al0.98Ga0.01In0.01N
Deng, and it is not limited to example recited herein, it, can be with modulation by controlling the different components of the stress regulating layer 204
The warpage degree of different epitaxial structures realizes being adjusted flexibly for technique.
In the present embodiment, the stress regulating layer 204 is one-component layer structure, and thickness is between an atomic layers thick
Degree between 100nm, using one-component layer structure can while ensureing modulation performance, substantially reduce technology difficulty and
Process costs.
As an example, the stress regulating layer 204 is in direct contact the n-layer 203 and the mqw light emitting layer 205,
To obtain the effect to the n-layer 203 and the direct modulation of warpage of the mqw light emitting layer 205.
The stress regulating layer 204 adulterates for N-shaped, and doping concentration is 1 × 1017~5 × 1019cm-3, further to drop
It is low its with n-layer 203 and the contact resistance of the mqw light emitting layer 205, reduce the fever of epitaxial structure and save electric current.
As shown in figure 9, step 3) S13 is then carried out, in formation mqw light emitting layer 205 on the stress regulating layer 204.
In MOCVD epitaxy equipment, using chemical vapor deposition method in forming Quantum Well on the stress regulating layer 204
Luminescent layer 205.Since the warpage of the n-layer 203 is improved in step 2), the quantum well radiation of this step growth
205 surface temperature uniformity of layer are higher, can get the uniform mqw light emitting layer of wavelength 205.
As an example, the emission wavelength of the mqw light emitting layer 205 is between 210nm~320nm.The utility model
AlxGayIn1-x-yN stress regulating layer (x >=70%, preferably, x >=95%, y >=0；X+y≤1) with the amount of the wave-length coverage
Sub- trap luminescent layer 205 is combined, and can reduce AlxGayIn1-x-yN stress regulating layer influences the electrical property of epitaxial structure, obtains
Good fiting effect.
As shown in figure 9, then carry out step 4) S14, on the mqw light emitting layer 205 formed electronic barrier layer 206,
In formation p-type layer 207 on the electronic barrier layer 206.
In MOCVD epitaxy equipment, using chemical vapor deposition method in forming electronics on the mqw light emitting layer 205
Barrier layer 206, then in formation p-type layer 207 on the electronic barrier layer 206.
The electronic barrier layer 206 can reduce electronic carrier and leak into p-type layer 207 from quantum trap luminous layer, to change
Kind luminous efficiency.
As shown in figure 9, the present embodiment also provides a kind of UV LED, including：Substrate 201, buffer layer 202, N-shaped
Layer 203, stress regulating layer 204, mqw light emitting layer 205, electronic barrier layer 206 and p-type layer 207.
The substrate 201 is Sapphire Substrate, and the Sapphire Substrate can be flat sheet type Sapphire Substrate or figure
Sapphire Substrate, it is of course also possible to other kinds of substrate be selected according to different demands, such as Si substrates, SiC substrate, GaN linings
Bottom etc., and it is not limited to example recited herein.
The material of the buffer layer 202 can be AlN etc..
The n-layer 203 is located on the buffer layer 202, to provide the electronics of illuminating.The material of the n-layer 203
Material can be N-shaped AlGaN etc..Since N-shaped AlGaN layer is grown on AlN buffer layers 202, lattice mismatch can make n type AlGaN layers
By very big compression, so that convex shape namely the buffer layer 202 and the n-layer 203 is presented in epitaxial structure warpage
Warpage is convexity warp.If the direct grown quantum well layer in the n-layer 203 with warpage, since warpage leads to n-layer 203
Height is inconsistent everywhere, and the growth temperature of the mqw light emitting layer 205 of its surface growth can be made there are larger deviation, caused
Emission wavelength uniformity degradation.
The stress regulating layer 204 is located in the n-layer 203, uniform to modulation epitaxial wafer warpage and surface temperature
Property.
In order to obtain preferable warpage modulation effect, the stress regulating layer 204 is less than the n-layer by lattice constant
203, the mqw light emitting layer 205 of subsequent growth and the material of p-type layer 207 are constituted, and are less than the n-layer using lattice constant
The 203 stress regulating layer 204 can reduce buffer layer 202 and the convexity warp of the n-layer 203, effectively to change
It deals with problems arising from an accident the surface temperature uniformity of continuous quantum trap luminous layer, and then promotes epitaxial structure emission wavelength uniformity.
The material of the stress regulating layer 204 includes AlxGayIn1-x-yN, wherein x >=70%, y >=0, x+y≤1, preferably
Ground, x >=95%, for example, the material of the stress regulating layer 204 can be Al0.7Ga0.2In0.1N、Al0.75Ga0.2In0.05N、
Al0.8Ga0.15In0.05N、Al0.85Ga0.1In0.05N、Al0.9Ga0.05In0.05N、Al0.95Ga0.05In0.05N、Al0.98Ga0.01In0.01N
Deng, and it is not limited to example recited herein, it, can be with modulation by adjusting the different components of the stress regulating layer 204
The warpage degree of different epitaxial structures realizes being adjusted flexibly for technique.
In the present embodiment, the stress regulating layer 204 is one-component layer structure, and thickness is between an atomic layers thick
Degree can improve the uniformity of electric current using one-component layer structure between 100nm while ensureing modulation performance.
As an example, the stress regulating layer 204 is in direct contact the n-layer 203 and the mqw light emitting layer 205,
To obtain the effect to the n-layer 203 and the direct modulation of warpage of the mqw light emitting layer 205.
The stress regulating layer 204 adulterates for N-shaped, and doping concentration is 1 × 1017~5 × 1019cm-3, further to drop
It is low its with n-layer 203 and the contact resistance of the mqw light emitting layer 205, reduce the fever of epitaxial structure and save electric current.
The mqw light emitting layer 205 is located on the stress regulating layer 204, the main region of electrons and holes recombination luminescence
Domain.For example, the emission wavelength of the mqw light emitting layer 205 can be between 210nm~320nm.
The electronic barrier layer 206 is located on the mqw light emitting layer 205, to stop that electronic carrier overflows.Institute
It states electronic barrier layer 206 and can reduce electronic carrier and leak into p-type layer 207 from quantum trap luminous layer, to improve luminous efficiency.
The p-type layer 207 is located on the electronic barrier layer 206, to provide the hole of illuminating.
Figure 11 is shown as the scanning electron microscope (SEM) photograph of the UV LED of the utility model, as seen from the figure, in epitaxial structure
N-layer 203 and mqw light emitting layer 205 between introduce AlxGayIn1-x-yN stress regulating layer 204 can reduce subsequent growth
Warpage when mqw light emitting layer.
Embodiment 2
The present embodiment provides a kind of UV LED, basic structure such as embodiments 1, wherein not with embodiment 1
It is with place, the stress regulating layer 204 is located in the n-layer 203.
Embodiment 3
The present embodiment provides a kind of UV LED, basic structure such as embodiments 1, wherein not with embodiment 1
It is with place, the stress regulating layer 204 is located in the mqw light emitting layer 205.
As described above, the UV LED and preparation method thereof of the utility model, has the advantages that：
The utility model is directed to UV LED, especially needle deep-UV light-emitting diode, in the N-shaped of epitaxial structure
Al is introduced between layer 203 and mqw light emitting layer 205xGayIn1-x-yN stress regulating layer 204, by component Al adjust to 70% with
On, it is possible to reduce warpage when subsequent growth mqw light emitting layer, and the surface temperature for improving the quantum trap luminous layer simultaneously is equal
Even property, and then promote epitaxial structure emission wavelength uniformity.
So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications completed under refreshing and technological thought or change, should be covered by the claim of the utility model.
Claims (9)
1. a kind of UV LED, which is characterized in that including：
Buffer layer；
N-layer is located on the buffer layer；
Mqw light emitting layer is located in the n-layer；And
P-type layer is located on the mqw light emitting layer；
The UV LED further includes stress regulating layer, and position includes being located in the n-layer, being located at the N-shaped
One kind between layer and the mqw light emitting layer and in the mqw light emitting layer；The stress regulating layer is by crystalline substance
The material that lattice constant is less than the n-layer, the mqw light emitting layer and the p-type layer is constituted, to ultraviolet hair described in modulation
The warpage of optical diode epitaxial structure.
2. UV LED according to claim 1, it is characterised in that：The material of the stress regulating layer includes
AlxGayIn1-x-yN, wherein x >=70%, y >=0, x+y≤1.
3. UV LED according to claim 1, it is characterised in that：The emission wavelength of the mqw light emitting layer
Between 210nm~320nm.
4. UV LED according to claim 1, it is characterised in that：The stress regulating layer is described to reduce
The convexity warp of UV LED epitaxial structure.
5. UV LED according to claim 4, it is characterised in that：The buffer layer includes AlN layers, the n
Type layer includes N-shaped AlGaN layer.
6. UV LED according to claim 1, it is characterised in that：The stress regulating layer is one-component layer
Structure, thickness is between an atomic layer level thickness between 100nm.
7. UV LED according to claim 1, it is characterised in that：The stress regulating layer is in direct contact described
N-layer and the mqw light emitting layer.
8. UV LED according to claim 1, it is characterised in that：The stress regulating layer adulterates for N-shaped,
Doping concentration is 1 × 1017~5 × 1019cm-3。
9. UV LED according to claim 1, it is characterised in that：The UV LED further includes electricity
Sub- barrier layer, the electronic barrier layer is between the mqw light emitting layer and the p-type layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820249131.7U CN207909908U (en) | 2018-02-12 | 2018-02-12 | Uv led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820249131.7U CN207909908U (en) | 2018-02-12 | 2018-02-12 | Uv led |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207909908U true CN207909908U (en) | 2018-09-25 |
Family
ID=63559897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820249131.7U Withdrawn - After Issue CN207909908U (en) | 2018-02-12 | 2018-02-12 | Uv led |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207909908U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019154158A1 (en) * | 2018-02-12 | 2019-08-15 | 厦门三安光电有限公司 | Ultraviolet light-emitting diode and manufacturing method therefor |
| CN116845158A (en) * | 2023-09-04 | 2023-10-03 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
-
2018
- 2018-02-12 CN CN201820249131.7U patent/CN207909908U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019154158A1 (en) * | 2018-02-12 | 2019-08-15 | 厦门三安光电有限公司 | Ultraviolet light-emitting diode and manufacturing method therefor |
| CN116845158A (en) * | 2023-09-04 | 2023-10-03 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
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