CN113013301B - Nitride light emitting diode - Google Patents
Nitride light emitting diode Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 74
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 81
- 230000000903 blocking effect Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract 18
- 239000010410 layer Substances 0.000 claims description 269
- 230000004888 barrier function Effects 0.000 claims description 18
- 125000004429 atom Chemical group 0.000 claims description 14
- 239000002356 single layer Substances 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 5
- 230000006798 recombination Effects 0.000 abstract description 20
- 238000005215 recombination Methods 0.000 abstract description 20
- 230000005855 radiation Effects 0.000 abstract description 5
- 150000001721 carbon Chemical group 0.000 description 56
- 229910002601 GaN Inorganic materials 0.000 description 24
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 239000012159 carrier gas Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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Abstract
The invention discloses a nitride light-emitting diode, which comprises a substrate, and a buffer layer, an N-type nitride layer, a light-emitting layer, an electron blocking layer and a P-type nitride layer which are sequentially arranged on the substrate, and is characterized in that: and a P-type carbon atom adjusting layer is arranged between the electron blocking layer and the P-type nitride layer, and the carbon atom content in the P-type carbon atom adjusting layer is higher than that in the light emitting layer and the electron blocking layer. According to the invention, the P-type carbon atom modulation layer is arranged behind the electron blocking layer, so that the effective Fermi level is increased when the concentration of C is increased, the energy band distortion at the interface of the luminescent layer and the P-type nitride layer is reduced, the generation of a two-dimensional electron cloud area is reduced, the ineffective recombination of electrons and holes is reduced, the electron overflow condition is reduced, and the LED radiation recombination efficiency is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a nitride light-emitting diode.
Background
GaN-based LEDs have been widely used in various light source fields such as backlight, illumination, vehicle lamps, decoration, various new electronic applications, and the like, due to their high-efficiency light emitting properties. The luminous efficiency of the luminescent material is mainly determined by two factors, namely the radiative recombination efficiency of electron holes in an active region, namely the internal quantum efficiency; the second is the light extraction efficiency. In the aspect of improving the internal quantum efficiency, the internal quantum efficiency can be improved by means of quantum well energy band design, crystal quality improvement, p-type layer hole injection efficiency improvement, electron overflow condition improvement and the like.
The quantum well energy band design is a bottleneck factor for determining the GaN-based LED, and because the recombination of electron holes is effective recombination in the active region, the condition of electron overflow is effectively reduced on the premise of not influencing the injection of P-type layer holes, and the internal quantum efficiency can be improved. Generally, electron overflow is improved by an electron blocking layer, such as AlGaN, which affects the hole injection efficiency, and the two-dimensional electron cloud generated at the interface between GaN and AlGaN increases the ineffective electron-hole recombination in this region, thereby reducing the light emitting efficiency of the LED.
Disclosure of Invention
In order to solve the above problems, the present invention provides a nitride light emitting diode, which includes a substrate, and a buffer layer, an N-type nitride layer, a light emitting layer, an electron blocking layer, and a P-type nitride layer sequentially disposed on the substrate, wherein the light emitting layer includes a well layer and a barrier layer, and is characterized in that: and a P-type carbon atom adjusting layer is arranged between the electron blocking layer and the P-type nitride layer, and the carbon atom content in the P-type carbon atom adjusting layer is higher than that in the light-emitting layer and the electron blocking layer.
Preferably, the electron blocking layer has a higher carbon atom content than the light-emitting layer.
Preferably, the carbon atom content in the P-type carbon atom modification layer is 5 x 10 16 ~1×10 18 Atoms/cm 3 。
Preferably, the P-type doping concentration in the P-type carbon atom modulation layer is 1 × 10 19 Atoms/cm 3 As described above.
Preferably, the thickness of the P-type carbon atom change layer is 3 to 70nm.
Preferably, the P-type carbon atom modified layer is Al a In b Ga 1-a-b N, wherein a is more than or equal to 0, b is more than or equal to 0, and a + b is less than or equal to 1.
Preferably, the P-type carbon atom modification layer may have a single layer structure or a superlattice structure.
Preferably, the P-type doping content in the P-type carbon atom modulation layer is greater than the carbon atom content.
Preferably, the energy gap width of the electron blocking layer is larger than that of the barrier layer in the light emitting layer.
Preferably, the electron blocking layer has a larger band gap width than GaN.
Preferably, the content of the Al component of the electron blocking layer is higher than the content of the Al component of the barrier layer in the light emitting layer.
Preferably, the electron blocking layer is AlcIndGa1-c-dN, wherein c is more than 0, d is more than or equal to 0, and c + d is less than or equal to 1.
Preferably, the thickness of the electron blocking layer is 1 to 50nm.
Preferably, a second electron blocking layer is further included between the P-type carbon atom modulation layer and the P-type nitride layer, and the second electron blocking layer is made of Al e In f Ga 1-e-f N, wherein e is more than 0, f is more than or equal to 0, e + f is less than or equal to1。
Preferably, the thickness of the second electron blocking layer is 10 to 80nm.
According to the invention, the P-type carbon atom modulation layer is arranged behind the electron blocking layer, so that the effective Fermi level is increased when the concentration of C is increased, the energy band distortion at the interface of the luminescent layer and the P-type nitride layer is reduced, the generation of a two-dimensional electron cloud area is reduced, the ineffective recombination of electrons and holes is reduced, the electron overflow condition is reduced, and the LED radiation recombination efficiency is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
While the invention will be described in connection with certain exemplary implementations and methods of use, it will be understood by those skilled in the art that it is not intended to limit the invention to these embodiments. On the contrary, the intent is to cover all alternatives, modifications and equivalents as included within the spirit and scope of the invention as defined by the appended claims.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
Fig. 1 is a schematic structural diagram of a light emitting diode according to an embodiment of the invention.
Fig. 2 is a schematic structural diagram of a light emitting layer and an electron blocking layer of a light emitting diode in an embodiment of the invention.
Fig. 3 is a schematic energy band diagram of a prior art led.
Fig. 4 is a schematic energy band diagram of a light emitting diode according to an embodiment of the present invention.
Element numbering in the figures:
1: a substrate; 2: a buffer layer; 3: an N-type nitride layer; 4: a stress buffer layer; 5: a light emitting layer; 51: a well layer; 52: a base layer; 6: an electron blocking layer; 7: a P-type carbon content adjusting layer; 8: a second electron blocking layer; 9: a P-type nitride layer.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for schematically illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
The following detailed description will be given with reference to the accompanying drawings and examples to explain how to apply the technical means to solve the technical problems and to achieve the technical effects.
Example 1
Referring to fig. 1, the present invention provides a nitride light emitting diode, which includes: the light-emitting diode comprises a substrate 1, a buffer layer 2, an N-type nitride layer 3, a stress release layer 4, a light-emitting layer 5, an electron blocking layer 6, a P-type carbon atom modulation layer 7, a second electron blocking layer 8 and a P-type nitride layer 9 which are sequentially grown on the substrate 1.
The substrate 1 may be made of a conductive material or an insulating material, and its material of fabrication may be selected from any one of sapphire, aluminum nitride, gallium nitride, silicon carbide, gallium arsenide, gallium nitride, and single crystal oxide having a lattice constant close to that of a nitride semiconductor material. In order to improve the light extraction efficiency of the nitride light emitting diode, patterning treatment may be performed to form a series of concave-convex structures on the surface of the nitride light emitting diode.
In order to reduce the lattice mismatch between the substrate 1 and the N-type nitride layer 3, a buffer layer 2 is grown between the substrate 1 and the N-type nitride layer 3, so that the lattice constant of the buffer layer 2 is between the substrate 1 and the N-type nitride layer 3, and may be made of Al x In y Ga 1-x-y N, wherein x is more than or equal to 0 and less than or equal to 1, and y is more than or equal to 0 and less than or equal to 1, and specifically can be an AlN layer, a GaN layer, an AlGaN layer, an AlInGaN layer, an InGaN layer and the like. The buffer layer 2 may be formed by an MOCVD method or a PVD method. In some embodiments, the buffer layer 2 preferably comprises a low-temperature GaN nucleating layer with the thickness of 25 to 40nm, a high-temperature GaN buffer layer with the thickness of 0.2 to 1 μm, and a two-dimensional GaN layer with the thickness of 1 to 2 μm.
The N-type nitride layer 3 is located between the buffer layer 2 and the light emitting layer 5, and provides electrons. The N-type nitride layer supplies electrons by doping N-type impurities such as Si, ge, sn, se, and Te. In this embodiment, the n-type impurity is preferably Si. The thickness of the N-type nitride layer 3 is 1 to 4 μm, and the doping concentration is 1 × 10 17 ~5×10 19 /cm 3 To provide electrons that radiatively recombine. The N-type nitride layer 3 may have a single layer structure or a superlattice structure.
A stress release layer 4 can be grown between the N-type nitride layer 3 and the light-emitting layer 5 to release stress generated in the growth process of the N-type nitride layer 3, the size of a V-shaped pit can be adjusted, and the light-emitting brightness of the nitride light-emitting diode is improved. The stress relaxation layer 4 may have a superlattice structure such as a superlattice structure formed by alternately stacking InGaN and GaN layers, or may have a single-layer structure.
The light emitting layer 5 is disposed between the N-type nitride layer 3 and the P-type nitride layer 9. The light-emitting layer 5 is a region for providing light radiation by recombination of electrons and holes, different materials can be selected according to different light-emitting wavelengths, and the light-emitting layer 5 can be a periodic structure of a single quantum well or a multiple quantum well. The light emitting layer 5 includes a well layer 51 and a barrier layer 52, wherein the barrier layer 52 has a larger band gap than the well layer 51. By adjusting the composition ratio of the semiconductor material in the light-emitting layer 5, light of different wavelengths is expected to be radiated. As shown in fig. 2, the light emitting layer 5 is formed by alternately stacking well layers 51 and barrier layers 52. In some embodiments, the light emitting layer 5 has 5 to 15 cycles of InGaN/GaN multiple quantum wells, the thickness of InGaN in each cycle is 2 to 4nm, and the thickness of GaN is 3 to 15nm. In some embodiments, barrier layer 52 of the quantum well may be doped with a small amount of Al, consisting of AlGaN.
In order to prevent the electrons from overflowing, an electron blocking layer 6 is provided behind the light emitting layer 5, as shown in fig. 2. The electron blocking layer 6 can be made of AlcIndGa1-c-dN material, wherein c is more than 0, d is more than or equal to 0, and c + d is less than or equal to 1. For example, the electron blocking layer may be one or a combination of more of AlN, alGaN, or AlInGaN. The energy gap height of the electron blocking layer 6 is higher than the energy gap width of the middle barrier layer of the light-emitting layer. In some alternative embodiments, the electron blocking layer 6 has a higher band gap height than the band gap width of GaN. In some optional embodiments, the Al component content of the electron blocking layer 6 is higher than the Al component content of the barrier layer in the light emitting layer 5. In order to improve the electron blocking layer 6 and reduce the occurrence of electron overflow, the thickness of the electron blocking layer 6 is preferably more than 1 nm; since the electron blocking layer 6 has an excessively large thickness, which affects the hole injection efficiency, the thickness of the electron blocking layer 6 is set to 50nm or less.
Fig. 3 is a schematic energy band diagram of a nitride light emitting diode in the prior art, as shown in fig. 3, in the prior art, an electron blocking layer 6, such as an AlGaN layer, raises an energy barrier to reduce the generation of electron overflow, and in addition to that the electron blocking layer 6 affects the hole injection efficiency, 2DEG (two-dimensional electron cloud) generated at the interface between GaN and AlGaN increases the ineffective electron-hole recombination in this region, thereby reducing the light emitting efficiency of the LED, therefore, in this embodiment, a P-type carbon atom modifying layer 7 is inserted between the electron blocking layer 6 and the P-type nitride layer 9, and the carbon atom content in the P-type carbon atom modifying layer 7 is higher than that in the light emitting layer and the electron blocking layer 6. In some embodiments, the electron blocking layer 6 has a higher carbon atom content than the light-emitting layer 5. The increase of the concentration of the carbon impurities in the P-type carbon atom modulation layer 7 can change the energy level of the original Fermi level of the P-type nitride layer 9, the increase of the concentration of the carbon impurities can effectively increase the Fermi level, the band distortion at the interface of the light-emitting layer 5 and the P-type nitride layer 9 is reduced, the band energy at the two sides of the interface is changed, and the area of two-dimensional electron cloud generated between the light-emitting layer 5 and the electron blocking layer 6 due to the band distortion is reduced.
Fig. 4 is a schematic energy band diagram of a nitride light emitting diode after adding a P-type carbon atom modulation layer 6 according to an embodiment of the present invention, as shown in fig. 4, the two-dimensional electron cloud area between the light emitting layer 5 and the electron blocking layer 6 due to band twisting is reduced. The recombination of the electron holes is generated effectively in the light-emitting layer, so that the recombination probability of the electron holes at the position can be increased by the two-dimensional electron cloud, but the recombination of the electron holes at the position is ineffective recombination, so that the more the recombination of the electron holes in the two-dimensional electron cloud area at the interface is, the greater the influence on the internal quantum efficiency is. In the embodiment of the invention, the P-type carbon atom modulation layer is added, so that the two-dimensional electron cloud area generated between the light-emitting layer 5 and the P-type nitride layer 9 due to energy band distortion is reduced, the ineffective recombination of electron holes is reduced, and the light-emitting efficiency of the nitride light-emitting diode is improved.
The carbon atom content in the P-type carbon atom change layer 7 is 5 multiplied by 10 16 ~1×10 18 Atoms/cm 3 . In some embodiments, it is preferable that the carbon atom content in the P-type carbon atom modification layer 7 is 1 × 10 17 Atoms/cm 3 As described above. The P-type doping concentration in the P-type carbon atom modulation layer 7 is 1 multiplied by 10 19 Atoms/cm 3 Above, preferably 5X 10 19 Atoms/cm 3 The above may be, for example, 1 × 10 20 ~2×10 20 Atoms/cm 3 . The injection efficiency of the holes can be improved by improving the P-type doping concentration of the P-type carbon atom modulation layer 7.
The thickness of the P-type carbon atom changing layer 7 is 3 to 70nm. In some embodiments, the thickness of the P-type carbon atom modulation layer 7 is preferably 10 nm, and more preferably 20 to 50nm.
The P-type carbon atom modulation layer 7 is Al a In b Ga 1-a-b N, wherein a is more than or equal to 0, b is more than or equal to 0, a + b is less than or equal to 1. In some embodiments, the P-type carbon atom modification layer 7 may have a single-layer structure. In some preferred embodiments, the P-type carbon atom modification layer 7 may be a superlattice structure, such as AlInGaN/GaN. In some embodiments, it is preferable that the P-type doping content > the carbon atom content in the P-type carbon atom modulation layer 7.
P-type nitrideThe layer 9 is located on the P-type carbon atom modulation layer 7, and the P-type nitride layer 9 provides holes by doping P-type impurities, which may be Mg, zn, ca, sr and Ba. In this embodiment, the P-type impurity is preferably Mg. The P-type nitride layer 9 further comprises a P-type ohmic contact layer (not shown), which is highly doped, for example, with a doping concentration higher than 1 × 10 20 Atoms/cm 3 And ohmic contact is formed with the P-type electrode of the nitride light emitting diode.
In order to further reduce the overflow of electrons, the P-type carbon atom modulation layer 7 and the P-type nitride layer 9 may further include a second electron blocking layer 8, and the material of the second electron blocking layer 8 is Al e In f Ga 1-e-f N, wherein e is more than 0, f is more than or equal to 0, e + f is less than or equal to 1. In some embodiments, the second electron blocking layer 8 is a single-layer structure. In some alternative embodiments, the second electron blocking layer 8 is a superlattice structure, such as an AlInGaN/GaN structure. In some embodiments, the carbon atom content of the second electron blocking layer may be higher than the carbon content of the P-type carbon atom modification layer; in some embodiments, the carbon atom content of the second electron blocking layer may also be lower than the carbon content of the P-type carbon atom modification layer. The carbon atom content of the second electron blocking layer can be adjusted by the growth temperature, the five-to-three ratio, the growth pressure, the composition of the carrier gas and the like.
The thickness range of the second electron blocking layer 8 is 10 to 80nm, and the thickness of the second electron blocking layer is preferably more than 12 nm. Through the arrangement of the second electron barrier layer 8, the overflow of electrons can be further reduced, the effective combination of the electrons and holes is improved, and the luminous efficiency of the nitride light-emitting diode is improved.
In the embodiment of the invention, the P-type carbon atom modulation layer 7 is arranged behind the electron blocking layer 6, so that the carbon atom concentration is increased, the effective Fermi level is increased, the energy band distortion at the interface of the light-emitting layer 5 and the P-type nitride layer 9 is reduced, the generation of a two-dimensional electron cloud area is reduced, the ineffective recombination of electrons and holes is reduced, the electron overflow condition is reduced, and the LED radiation recombination efficiency is improved.
Example 2
The manufacturing process of the semiconductor light emitting element of the foregoing embodiment will be described in detail.
Firstly, providing a substrate 1, wherein in the embodiment, the substrate 1 is preferably a sapphire substrate; in order to reduce the lattice mismatch between the substrate 1 and the N-type nitride 3, a buffer layer 2 is formed on the substrate 1, and in this embodiment, the buffer layer 2 preferably includes a low-temperature GaN nucleation layer with a thickness of 25 to 40nm, a high-temperature GaN buffer layer with a thickness of 0.2 to 1 μm, and a two-dimensional GaN layer with a thickness of 1 to 2 μm.
Then, an N-type nitride layer 3 is formed on the buffer layer 2, preferably, the nitride layer 3 has a thickness of 1 to 4 μm and a doping concentration of 1 × 10 17 ~5×10 19 /cm 3 In the meantime. The N-type nitride layer 3 may be a single layer or a superlattice structure.
Next, a stress relief layer 4 is formed on the N-shaped nitride layer 3, in the embodiment, the stress relief layer 4 is preferably a superlattice structure, such as a superlattice structure formed by alternately stacking InGaN and GaN layers, and in some embodiments, the stress relief layer 4 may also be a single layer structure.
Next, a light-emitting layer 5 is formed on the stress relieving layer 4. In the present embodiment, it is preferable that the light emitting layer 5 has a periodic structure of multiple quantum wells, the light emitting layer 5 has 5 to 15 periods of InGaN/GaN multiple quantum wells, the InGaN thickness in each period is 2 to 4nm, and the GaN thickness is 3 to 15nm. In some embodiments, the barrier layer of the quantum well may be doped with a small amount of Al and be composed of AlGaN.
Next, an electron blocking layer 6 is formed on the light emitting layer 5, and the electron blocking layer 6 can suppress overflow of electrons. In an embodiment, the electron blocking layer 6 is preferably made of one or more materials such as AlN, alGaN, or AlInGaN. The thickness of the electron blocking layer 6 is preferably 1nm or more and 50nm or less.
Next, a P-type carbon atom changing layer 7 is formed on the electron blocking layer 6, and the carbon atom content of the P-type carbon atom changing layer 7 is higher than the carbon atom content between the light emitting layer 5 and the electron blocking layer 6. The P-type carbon atom modulation layer 7 is Al a In b Ga 1-a-b N, wherein a is more than or equal to 0, b is more than or equal to 0, a + b is less than or equal to 1, and the structure can be a single-layer structure orA superlattice structure. In this embodiment, the carbon atom content in the P-type carbon atom modification layer 7 is preferably 1 × 10 17 Atoms/cm 3 Above, it is preferable that the P-type doping concentration in the P-type carbon atom modulation layer 7 is 5 × 10 19 Atoms/cm 3 The above may be, for example, 1 × 10 20 ~2×10 20 Atoms/cm 3 (ii) a The thickness of the P-type carbon atom changing layer 7 is preferably 10 nm, and more preferably 20 to 50nm.
Next, in order to further reduce the overflow of electrons, a second electron blocking layer 8 is formed on the P-type carbon atom modulation layer 7, and the material of the second electron blocking layer 8 is Al e In f Ga 1-e-f N, wherein e is more than 0, f is more than or equal to 0, e + f is less than or equal to 1. The second electron blocking layer 8 may have a single layer structure or a superlattice structure such as an AlInGaN/GaN structure. The thickness range of the second electronic blocking layer 8 is 10-80nm, and the thickness of the second electronic blocking layer is preferably more than 12 nm.
Finally, a P-type nitride layer 9 is formed on the second electron blocking layer 8, and in this embodiment, the P-type nitride layer is preferably doped with Mg to provide holes. The P-type nitride layer 9 further comprises a P-type ohmic contact layer (not shown), which is highly doped, for example, with a doping concentration higher than 1 × 10 20 Atoms/cm 3 And ohmic contact is formed with the P-type electrode.
According to the invention, the P-type carbon atom modulation layer is arranged on the electron barrier layer, the carbon content of the P-type carbon atom modulation layer is higher than that of the luminescent layer and the electron barrier layer, the effective Fermi energy level can be increased by increasing the carbon concentration, the energy band distortion at the interface of the luminescent layer and the P-type nitride layer is reduced, the generation of a two-dimensional electron cloud area is reduced, the ineffective recombination of electrons and holes is reduced, the electron overflow condition is reduced, and the LED radiation recombination efficiency is improved.
It should be noted that the above-mentioned embodiments are only for illustrating the present invention, and not for limiting the present invention, and those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention, so that all equivalent technical solutions also belong to the scope of the present invention, and the scope of the present invention should be defined by the claims.
Claims (13)
1. Nitride emitting diode contains the substrate to and the buffer layer that is located the substrate in proper order, N type nitride layer, luminescent layer, electron barrier layer and P type nitride layer, wherein the luminescent layer contains well layer and barrier layer, its characterized in that: a P-type carbon atom adjusting layer is arranged between the electron blocking layer and the P-type nitride layer, the P-type carbon atom adjusting layer is an adjusting layer for adjusting energy band distortion at the interface of the light-emitting layer and the P-type nitride layer, and the carbon atom content in the P-type carbon atom adjusting layer is higher than that in the light-emitting layer and the electron blocking layer; the carbon atom content in the electron blocking layer is higher than that in the light-emitting layer; the P-type carbon atom modulation layer is Al a In b Ga 1-a-b N, wherein a is more than or equal to 0, b is more than or equal to 0, a + b is less than or equal to 1.
2. The nitride light emitting diode according to claim 1, characterized in that: the carbon atom content in the P-type carbon atom change layer is 5 multiplied by 10 16 ~1×10 18 Atoms/cm 3 。
3. The nitride light emitting diode according to claim 1, wherein: the P-type doping concentration in the P-type carbon atom modulation layer is 1 multiplied by 10 19 Atoms/cm 3 The above.
4. The nitride light emitting diode according to claim 1, wherein: the thickness of the P-type carbon atom change layer is 3 to 70nm.
5. The nitride light emitting diode according to claim 1, wherein: the P-type carbon atom modulation layer can be of a single-layer structure or a superlattice structure.
6. The nitride light emitting diode according to claim 1, characterized in that: the P-type doping content in the P-type carbon atom modulation layer is larger than the carbon atom content.
7. The nitride light emitting diode according to claim 1, wherein: the energy gap width of the electron blocking layer is larger than that of the middle barrier layer of the light-emitting layer.
8. The nitride light emitting diode according to claim 7, wherein: the energy gap width of the electron blocking layer is larger than that of the GaN.
9. The nitride light emitting diode according to claim 7, characterized in that: the content of the Al component of the electron blocking layer is higher than that of the Al component of the barrier layer in the light-emitting layer.
10. The nitride light emitting diode according to claim 1, wherein: the electron blocking layer is Al c In d Ga 1-c-d N, wherein c is more than 0, d is more than or equal to 0, c + d is less than or equal to 1.
11. The nitride light emitting diode according to claim 1, characterized in that: the thickness of the electron blocking layer is 1 to 50nm.
12. The nitride light emitting diode according to claim 1, wherein: a second electron blocking layer is also arranged between the P-type carbon atom modulation layer and the P-type nitride layer, and the second electron blocking layer is Al e In f Ga 1-e-f N, wherein e is more than 0, f is more than or equal to 0, and e + f is less than or equal to 1.
13. The nitride light emitting diode according to claim 12, wherein: the thickness of the second electron blocking layer is 10 to 80nm.
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