CN107968138B - Nitride light-emitting diode - Google Patents
Nitride light-emitting diode Download PDFInfo
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- CN107968138B CN107968138B CN201711188772.2A CN201711188772A CN107968138B CN 107968138 B CN107968138 B CN 107968138B CN 201711188772 A CN201711188772 A CN 201711188772A CN 107968138 B CN107968138 B CN 107968138B
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 66
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 48
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 170
- 239000012535 impurity Substances 0.000 claims description 25
- 239000002356 single layer Substances 0.000 claims description 21
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 150000001721 carbon Chemical group 0.000 description 36
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a nitride light-emitting diode, which comprises a substrate, and a buffer layer, an N-type nitride layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type nitride layer which are sequentially arranged on the substrate, and is characterized in that: an N-type carbon atom modulation layer is arranged between the N-type nitride layer and the multi-quantum well light-emitting layer, the N-type carbon atom modulation layer comprises a first modulation layer and a second modulation layer which are positioned on the N-type nitride layer, and the carbon atom content of the first modulation layer is greater than that of the second modulation layer. The n-type carbon atom modulation layer can reduce the electron mobility, effectively improve the uneven distribution of electron holes in the multiple quantum well light-emitting layer and reduce the electron overflow phenomenon.
Description
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a nitride light-emitting diode capable of reducing electron overflow.
Background
A nitride light emitting diode is a semiconductor device that converts current into light, and its conventional structure includes: the light-emitting diode comprises a substrate, an N-type nitride layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type nitride layer, wherein the N-type nitride layer is used for providing electrons, and the P-type nitride layer is used for providing holes. However, when a current is injected, since electron Mobility (Mobility) is faster than that of holes, the electron holes are unevenly distributed to the quantum well, and thus, the light emitting efficiency is reduced. Therefore, how to reduce the mobility rate of electrons and make the electrons and holes uniformly distributed in the quantum well, thereby increasing the effective recombination radiation efficiency, is a technical problem that needs to be solved urgently.
In order to solve the above problems, the present invention provides a nitride light emitting diode, which includes a substrate, and a buffer layer, an N-type nitride layer, a multiple quantum well light emitting layer, an electron blocking layer, and a P-type nitride layer sequentially disposed on the substrate, and is characterized in that: an N-type carbon atom modulation layer is arranged between the N-type nitride layer and the multi-quantum well light-emitting layer, the N-type carbon atom modulation layer comprises a first modulation layer and a second modulation layer which are sequentially arranged on the N-type nitride layer, and the carbon atom content of the first modulation layer is larger than that of the second modulation layer.
Preferably, the carbon atom content in the n-type carbon atom modification layer is 1 × 1017~1×1018Atoms/cm3。
Preferably, the n-type carbon atom modulation layer contains n-type impurities in an amount larger than the carbon atom content.
Preferably, the first modulation layer is a nitride single layer structure or a nitride multilayer structure, wherein the n-type impurity content > the carbon atom content.
Preferably, the second tuning layer is an InGaN/GaN superlattice structure, wherein In content > n-type impurity content > carbon atom content.
Preferably, the first tuning layer is a GaN monolayer or an InGaN monolayer or a multilayer structure composed of the two monolayers.
Preferably, the content of the N-type impurities in the N-type nitride layer is greater than that of the N-type impurities in the N-type carbon atom modulation layer.
Preferably, the n-type carbon atom modulation layer further comprises a third modulation layer.
Preferably, the third modulation layer is a nitride single layer structure or a nitride multilayer structure.
Preferably, the third modulation layer is a GaN monolayer or an InGaN monolayer or a multilayer structure composed of the foregoing two monolayers.
According to the invention, the N-type carbon atom modulation layer is arranged between the N-type layer and the multiple quantum well light-emitting layer, the first modulation layer and the second modulation layer are arranged, the carbon atom content of the first modulation layer is greater than that of the second modulation layer, the electron mobility can be gradually reduced through the carbon atom content with different concentrations, the uneven distribution of electron holes in the quantum well is improved, and the electron overflow phenomenon is further reduced.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode according to embodiment 1 of the present invention.
FIG. 2 is a schematic view of the structure of an n-type carbon atom modulation layer in example 1 of the present invention.
FIG. 3 is a schematic view of the structure of an n-type carbon atom modulation layer in example 2 of the present invention.
Illustration of the drawings: 100: a substrate; 200: a buffer layer; 300: an N-type nitride layer; 310: an N electrode; 400: an n-type carbon atom modification layer; 410: a first modulation layer; 420: a second modulation layer; 430: a third modulation layer; 500: a multiple quantum well light emitting layer; 600: an electron blocking layer; 700: a P-type nitride layer; 710: and a P electrode.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The scope of the present invention is not limited to the embodiments described below, and the embodiments of the present invention may be modified into various other embodiments.
Example 1
Referring to fig. 1, the nitride light emitting diode according to the first embodiment of the present invention includes a substrate 100, and a buffer layer 200, an N-type nitride layer 300, an N-type carbon atom modulation layer 400, a multiple quantum well light emitting layer 500, an electron blocking layer 600, and a P-type nitride layer 700 sequentially disposed on the substrate 100, and an N electrode 310 disposed on the N-type nitride layer 300 and a P electrode 710 disposed on the P-type nitride layer 700.
The buffer layer 200 may be prepared by using a chemical vapor deposition or a physical vapor deposition method to reduce lattice mismatch between the substrate 100 and the N-type nitride layer 300, and the buffer layer 200 is an AlN layer or a GaN layer or a composite structure layer formed by alternating the two.
The N-type nitride layer 300 is located on the buffer layer 200, and is an N-type nitride single layer or a composite structure of the N-type nitride layer 300 and a non-doped nitride layer, wherein the N-type doped impurity is silicon, which is a main electron providing layer.
The N-type carbon atom modulation layer 400 is arranged between the N-type nitride layer 300 and the multiple quantum well light-emitting layer 500, wherein the N-type impurity content in the N-type carbon atom modulation layer 400 is larger than the carbon atom content, and the carbon atom content is 1 × 1017~1×1018Atoms/cm3The N-type impurity content and the carbon atom content in the N-type carbon atom modulation layer 400 are modulated, so that the mobility of electrons in an N-type contact is reduced, the phenomenon of uneven distribution of electrons and holes in the multiple quantum well light-emitting layer 500 is improved, and the electron overflow is further reduced. The n-type impurity in the n-type carbon atom modulation layer 400 is silicon, or any one of germanium, tin, and lead. In this embodiment, the n-type impurity is preferably silicon, and the silicon impurity is doped in a gradient doping manner or a Delta doping manner.
Referring to fig. 2, in particular, the N-type carbon atom modulation layer 400 includes a first modulation layer 410 on the N-type nitride layer 300, and a second modulation layer 420 on the first modulation layer 410, in which the carbon atom content of the first modulation layer 410 is greater than that of the second modulation layer 420. The first modulation layer 410 is a nitride single layer structure or a nitride multi-layer structure in which the n-type impurity content > the carbon atom content.
The second modulation layer 420 is InxGa1-xAnd the N/GaN superlattice structure layer, wherein the In impurity content is more than the N-type impurity content and more than the carbon atom content.
The first graded layer 410 may be an indium-containing nitride layer, but the indium content is less than the indium content of the second graded layer 420. Meanwhile, the content of the N-type impurity in each of the first and second modulation layers 410 and 420 is less than the content of the N-type impurity in the N-type nitride layer 300.
The first tuning layer 410 is a GaN monolayer or an InGaN monolayer or a multilayer structure of the two monolayers.
The N-type carbon atom modulation layer 400 composed of the first modulation layer 410 and the second modulation layer 420 can prevent the phenomenon that electrons in the N-type nitride layer 300 excessively flow into the multiple quantum well light-emitting layer 500, so that holes can flow to the multiple quantum well light-emitting layer 500 more, further, the electrons and the holes can be better recombined and radiated out in the multiple quantum well light-emitting layer 500, and the light-emitting efficiency of the light-emitting diode is improved.
The multiple quantum well light emitting layer 500 is located on the n-type carbon atom modulation layer 400, and is an electron-hole recombination radiation center. The multilayer structure comprises alternately laminated barrier layers and well layers, wherein the barrier layers can be GaN layers, AlGaN layers or AlInGaN layers; the well layer may be InyGa1-yAnd N layers. And the content of indium in the well layer is greater than that in the second graded layer 420, i.e. 1 > y > x > 0.
The P-type nitride layer 700 includes a P-type electron blocking layer 600 and a P-type GaN layer, and the P-type doping impurity may be magnesium, and may be any one of calcium, strontium, and barium. The preferred P-type impurity in this embodiment is magnesium for providing holes.
The P-electrode 710 is disposed on the P-type nitride layer 700, and the N-electrode 310 is disposed on the N-type nitride layer 300, so that when a current is injected into the P-electrode 710 and the N-electrode 310, the light emitting diode can emit light with a certain wavelength.
According to the invention, the N-type carbon atom modulation layer is inserted between the multiple quantum well light-emitting layer and the N-type nitride layer, so that the impurity defects of the lattice material are increased due to the increase of the carbon atoms, electrons collide with phonons and the impurity defects to scatter, the electrons lose the velocity component in the advancing direction, ionized impurity scattering is generated, the electron mobility is reduced, and the electron overflow phenomenon caused by the over-high mobility of the electrons relative to holes is prevented.
Example 2
Referring to fig. 3, the present embodiment is different from embodiment 1 in that: the n-type carbon atom modulation layer 400 is composed of a first modulation layer 410, a second modulation layer 420, and a third modulation layer 430. The third modulation layer 430 is a nitride single layer or a nitride multilayer structure, and is also doped with indium, but the relationship between the indium contents in the first modulation layer 410, the second modulation layer 420, and the third modulation layer 430 is as follows: second graded layer 420 indium content > third graded layer 430 indium content > first graded layer 410 indium content. Therefore, the third graded layer 430 is a GaN monolayer or an InGaN monolayer or a multilayer structure composed of the foregoing two monolayers.
According to the invention, the N-type carbon atom modulation layer 400 is arranged between the N-type layer and the multiple quantum well light-emitting layer 500, the first modulation layer 410, the second modulation layer 420 and the third modulation layer 430 are arranged, and the carbon atom content of the first modulation layer 410 is greater than that of the second modulation layer 420 and the third modulation layer 430, so that the electron mobility can be reduced through the N-type carbon atom modulation layer, the phenomenon of uneven distribution of electron holes in the quantum well light-emitting layer can be effectively improved, the electron overflow can be reduced, the effective recombination radiation probability of the electron-hole in the multiple quantum well light-emitting layer 500 can be improved, and the internal quantum efficiency of the light-emitting diode can be improved.
The above embodiments are only for illustrating the invention and are not to be construed as limiting the invention, and those skilled in the art can make various modifications and variations to the invention without departing from the spirit and scope of the invention, so that all equivalent technical solutions also fall into the scope of the invention, and the scope of the invention should be determined by the claims.
Claims (9)
1. The utility model provides a nitride emitting diode, includes the substrate to and buffer layer, N type nitride layer, multiple quantum well luminescent layer, electron barrier layer and the P type nitride layer that are located the substrate in proper order, its characterized in that: an N-type carbon atom modulation layer is arranged between the N-type nitride layer and the multi-quantum well light-emitting layer, the content of N-type impurities in the N-type carbon atom modulation layer is larger than the content of carbon atoms, the N-type carbon atom modulation layer comprises a first modulation layer and a second modulation layer which are sequentially arranged on the N-type nitride layer, and the content of the carbon atoms in the first modulation layer is larger than the content of the carbon atoms in the second modulation layer.
2. The nitride light emitting diode according to claim 1, wherein the n-type carbon atom modification layer has a carbon atom content of 1 × 1017~1×1018Atoms/cm3。
3. The nitride light emitting diode according to claim 1, wherein: the first modulation layer is of a nitride single-layer structure or a nitride multi-layer structure, wherein the content of n-type impurities is larger than the content of carbon atoms.
4. The nitride light emitting diode according to claim 1, wherein: the second modulation layer is of an InGaN/GaN superlattice structure, wherein the In content is larger than the n-type impurity content and larger than the carbon atom content.
5. A nitride light emitting diode according to claim 3, wherein: the first modulation layer is a GaN single layer or an InGaN single layer or a multilayer structure consisting of the two single layers.
6. The nitride light emitting diode according to claim 1, wherein: the content of N-type impurities in the N-type nitride layer is greater than that in the N-type carbon atom modulation layer.
7. A nitride light emitting diode according to any one of claims 1 to 6, wherein: the n-type carbon atom modulation layer also comprises a third modulation layer.
8. The nitride light emitting diode according to claim 7, wherein: the third modulation layer is of a nitride single-layer structure or a nitride multi-layer structure.
9. The nitride light emitting diode according to claim 7, wherein: the third modulation layer is a GaN single layer or an InGaN single layer or a multilayer structure consisting of the two single layers.
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| CN201711188772.2A CN107968138B (en) | 2017-11-24 | 2017-11-24 | Nitride light-emitting diode |
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| CN201711188772.2A CN107968138B (en) | 2017-11-24 | 2017-11-24 | Nitride light-emitting diode |
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