KR20160117020A - Light emitting diode with high efficiency - Google Patents

Light emitting diode with high efficiency Download PDF

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KR20160117020A
KR20160117020A KR1020150045571A KR20150045571A KR20160117020A KR 20160117020 A KR20160117020 A KR 20160117020A KR 1020150045571 A KR1020150045571 A KR 1020150045571A KR 20150045571 A KR20150045571 A KR 20150045571A KR 20160117020 A KR20160117020 A KR 20160117020A
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layer
carbon
shock
nitride semiconductor
type nitride
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KR1020150045571A
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Korean (ko)
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장삼석
정정환
김경해
곽우철
조성룡
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서울바이오시스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Microelectronics & Electronic Packaging (AREA)
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  • Led Devices (AREA)

Abstract

A light emitting diode according to an embodiment of the present invention includes an n-type nitride semiconductor layer, a carbon shock layer positioned on the n-type nitride semiconductor layer, an active layer located on the carbon shock layer, and a p-type nitride semiconductor layer located on the active layer Wherein the carbon concentration of the carbon shock layer is 1 x 10 16 atoms / cm 3 to 1 x 10 20 atoms / cm 3 , and the thickness of the carbon shock layer is 20 nm to 300 nm. When the forward voltage is applied to the carbon shock layer 110, the electron mobility in the horizontal direction increases to improve the current dispersion effect in the light emitting diode. When the reverse voltage is applied, the carbon shock layer 110 has a high resistance, have.

Description

[0001] LIGHT EMITTING DIODE WITH HIGH EFFICIENCY [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode, and more particularly, to a light emitting diode having improved current dispersion efficiency.

Light emitting diodes (LEDs) are solid state devices that convert electrical energy into light and generally comprise an active layer of one or more semiconductor materials interposed between semiconductor layers doped with opposite conductivity type impurities. When a forward bias is applied across these doped layers, electrons and holes are injected into the active layer, recombined to generate light.

In a light emitting diode, it is generally difficult for a current supplied by a forward voltage to be uniformly dispersed in the semiconductor layer in the horizontal direction over the entire light emitting region. Therefore, recombination of electrons and holes is mainly performed around the electrode pads. Accordingly, the light emission intensity is lowered in a part of the light emitting region of the conventional light emitting diode, and the overall light emitting efficiency of the light emitting diode is lowered.

In order to solve the problem that the current dispersion is not efficiently performed in the semiconductor layer of the light emitting diode, the electrode extension part can be used together with the light emitting diode. However, in order to form such an electrode extending portion, the active layer is removed to form a region where the electrode extending portion is in contact with the semiconductor layer, which causes a problem that the light emitting region is reduced. Furthermore, even if the current spreading is made uniform by using the electrode extension portion, the horizontal current dispersion in the semiconductor layer is not performed well, and there is a limit to uniformly distribute the current throughout the light emitting region.

On the other hand, when a light emitting diode is connected to an AC power source and a reverse voltage is applied, it is ideal that a depletion layer is formed in the light emitting diode and no current flows. However, in practice, an electrostatic discharge (ESD) occurs, causing electrons to move along defects in the depletion layer, resulting in an undesirable leakage current.

Accordingly, there is a demand for a light emitting diode including a structure that has a high current dispersion efficiency when a forward voltage is applied and can prevent a leakage current when a reverse voltage is applied.

A problem to be solved by the present invention is to provide a light emitting diode having improved current dispersion efficiency and improved withstand voltage characteristics against ESD.

A light emitting diode according to an embodiment of the present invention includes an n-type nitride semiconductor layer, a carbon shock layer positioned on the n-type nitride semiconductor layer, an active layer located on the carbon shock layer, and a p-type nitride semiconductor layer located on the active layer Wherein the carbon concentration of the carbon shock layer is 1 x 10 16 atoms / cm 3 to 1 x 10 20 atoms / cm 3 , and the thickness of the carbon shock layer is 20 nm to 300 nm. In this case, when the forward voltage is applied, the electron mobility in the horizontal direction increases to improve the current dispersion effect in the LED, and since the carbon shock layer has a high resistance at the time of applying the reverse voltage, the withstand voltage characteristic against ESD can be improved have.

The carbon concentration of the carbon-shock layer may be smaller than the n-type dopant concentration of the n-type nitride semiconductor layer. Through this, electrons which can move to the active layer can be positioned over a wide region of the carbon shock layer, and the probability of electron migration to a wide region of the active layer can be increased. Therefore, the light emitting efficiency of the light emitting diode can be increased.

The resistance of the carbon shock layer may be greater than the resistance of the n-type nitride semiconductor layer. Therefore, when the reverse voltage is applied, the capacitance of the depletion layer increases due to the high resistance of the carbon shock layer, and the withstand voltage characteristic against ESD can be improved.

Wherein the active layer comprises a well layer comprising In and the light emitting diode further comprises a superlattice layer located between the carbon shock layer and the active layer and the In concentration of the superlattice layer is greater than the In concentration of the well layer 20% to 50%. As a result, the stress due to lattice mismatching between the carbon shock layer and the active layer can be more effectively prevented.

Wherein the carbon shock layer comprises an n-type dopant and the n-type dopant concentration of the carbon-shock layer is greater than a carbon concentration in the carbon- ≪ / RTI > When the concentration of the n-type dopant in the carbon shock layer is higher than the concentration of carbon in the carbon shock layer, the electron trap center in the carbon shock layer is filled with electrons in the carbon shock layer, The effect of improving the horizontal movement of the electrons supplied to the light emitting element is reduced.

The light emitting diode further includes an electron dispersion layer positioned between the carbon shock layer and the n-type nitride semiconductor layer, and the bandgap of the electron dispersion layer may be larger than the bandgap of the n-type nitride semiconductor layer. Therefore, electrons can be uniformly injected over a wide region of the active layer, so that the internal quantum efficiency can be increased.

The light emitting diode may further include a two-dimensional electron gas layer between the electron dispersion layer and the n-type nitride semiconductor layer. Accordingly, since the carbon shock layer can serve as another electron dispersion layer, the movement of electrons in the horizontal direction can be further improved.

A light emitting diode according to another embodiment of the present invention includes a substrate in a growth chamber, an n-type nitride semiconductor layer on the substrate, a carbon shock layer on the n-type nitride semiconductor layer, Forming a p-type nitride semiconductor layer on the active layer, wherein forming the carbon-shock layer comprises introducing triethyl gallium (TEGa) source into the growth chamber And the growth temperature for forming the carbon-shock layer may be lower than the growth temperature for forming the n-type nitride semiconductor layer. When the carbon-shock layer grows at a relatively low temperature, the carbon contained in methyl or ethyl, which is a ligand constituting the Group III atomic source, can not be dissociated from the atomic source and can be introduced into the growth crystal and doped to a sufficient concentration in the carbon- .

The growth temperature for forming the carbon shock layer may be 850 캜 or less.

The growth pressure for forming the carbon shock layer may be 150 torr or more. In this case, when the carbon shock layer is formed, the amount of NH 3 injected into the carbon shock layer is reduced, so that the pores of the nitrogen atoms can be more easily filled with carbon. Or the site of the nitrogen atom may be substituted with carbon.

The formation of the carbon shock layer may further include introducing an NH 3 source into the growth chamber, wherein an NH 3 source implantation amount introduced at the time of forming the carbon shock layer is introduced at the time of forming the n-type nitride semiconductor layer NH 3 source implant dose. When the amount of NH 3 injected is reduced, the carbon nano pores of the carbon shock layer can be increased because the pores of the nitrogen atoms become higher and more carbon can fill the pores or the sites of the nitrogen atoms can be substituted with carbon.

The formation of the carbon-shock layer may further comprise the introduction of 4 carbon tetrabromide (CBr 4) in the growth chamber. Whereby carbon can be doped to a sufficient concentration in the carbon shock layer.

The carbon concentration of the carbon-shock layer may be smaller than the n-type dopant concentration of the n-type nitride semiconductor layer. Through this, electrons which can move to the active layer can be positioned over a wide region of the carbon shock layer, and the probability of electron migration to a wide region of the active layer can be increased. Therefore, the light emitting efficiency of the light emitting diode can be increased.

The resistance of the carbon shock layer may be greater than the resistance of the n-type nitride semiconductor layer. Therefore, when the reverse voltage is applied, the capacitance of the depletion layer increases due to the high resistance of the carbon shock layer, and the withstand voltage characteristic against ESD can be improved.

The method of fabricating a light emitting diode further comprises forming a superlattice layer between the carbon-shock layer and the active layer, wherein the active layer comprises a well layer comprising In, wherein the In concentration of the superlattice layer is greater than the In concentration of the well layer Of the In concentration of the first layer. As a result, the stress due to lattice mismatching between the carbon shock layer and the active layer can be more effectively prevented.

Wherein the carbon shock layer comprises an n-type dopant and the n-type dopant concentration of the carbon-shock layer is greater than a carbon concentration in the carbon- ≪ / RTI > When the concentration of the n-type dopant in the carbon shock layer is higher than the concentration of carbon in the carbon shock layer, the electron trap center in the carbon shock layer is filled with electrons in the carbon shock layer, The effect of improving the horizontal movement of the electrons supplied to the light emitting element is reduced.

The light emitting diode manufacturing method may further include forming an electron dispersion layer between the carbon shock layer and the n-type nitride semiconductor layer, wherein a band gap of the electron dispersion layer is larger than a band gap of the n-type nitride semiconductor layer . Therefore, electrons can be uniformly injected over a wide region of the active layer, so that the internal quantum efficiency can be increased.

The carbon concentration of the carbon shock layer may be 1 x 10 16 atoms / cm 3 to 1 x 10 20 atoms / cm 3 .

The thickness of the carbon shock layer may be 20 nm to 300 nm.

The light emitting diode manufacturing method may further include removing the substrate.

According to the present invention, due to the carbon shock layer of the light emitting diode, when the forward voltage is applied, the electron mobility in the horizontal direction increases to improve the current dispersion effect in the light emitting diode. Further, since the carbon shock layer has a high resistance at the time of applying the reverse voltage, the withstand voltage characteristic against ESD can be improved.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
2 is a graph illustrating a light emitting diode according to an exemplary embodiment of the present invention.
3 is a graph illustrating a light emitting diode according to an exemplary embodiment of the present invention.
4 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.
5 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

1, a light emitting diode according to an embodiment of the present invention includes an n-type nitride semiconductor layer 100, a carbon shock layer 110, an active layer 120, and a p-type nitride semiconductor layer 130. Referring to FIG. Further, the light emitting diode may further include a substrate (not shown).

Although not shown, the light emitting diode of the present invention may include a substrate. The substrate is not limited as long as it can grow the nitride semiconductor layer, and may be an insulating or conductive substrate. The substrate may be, for example, a sapphire substrate, a silicon substrate, a silicon carbide substrate, an aluminum nitride substrate, or a gallium nitride substrate. In this embodiment, the substrate may be a patterned sapphire substrate (PSS) having a concavo-convex pattern on its upper surface, and the PSS may include a C face as a growth surface. However, the present invention is not limited thereto. The substrate may be removed from the light emitting diode through a method such as laser lift off.

The n-type nitride semiconductor layer 100 includes a nitride semiconductor such as (Al, Ga, In) N. The n-type nitride semiconductor layer 100 may be grown on a substrate disposed in a growth chamber using a method such as MOCVD, MBE, HVPE, or the like. When the n-type nitride semiconductor layer 100 is grown using MOCVD, it can be grown at a growth rate of about 1050 to 1200? At a predetermined growth rate. The n-type nitride semiconductor layer 100 may be doped with n-type impurities including at least one impurity such as Si, C, Ge, Sn, Te, and Pb.

The carbon-shock layer 110 may include a nitride-based semiconductor such as (Al, Ga, In) N. The carbon shock layer 110 may have a relatively high carbon concentration. Specifically, the carbon concentration of the carbon-shock layer 110 may be higher than the carbon concentration of the n-type nitride semiconductor layer 100, and may be higher than the carbon concentration of the undoped nitride semiconductor layer (not shown). In this case, carbon may be disposed in a site of defects present in the nitride-based semiconductor layer, which interferes with the horizontal dispersion of electrons, especially vacancies of nitrogen atoms. Accordingly, electron scattering due to defects is reduced, so that, when a forward voltage is applied, the movement of electrons in the horizontal direction can be facilitated. Generally, the attraction between the pores of the nitrogen atoms and the electrons hinders the horizontal movement of electrons in the semiconductor layer. When carbon is disposed in the pores of the nitrogen atoms as in the present invention, attraction between the pores of the nitrogen atoms and electrons is reduced, and the mobility of electrons in the horizontal direction is increased.

The carbon concentration of the carbon-shock layer 110 may be less than the n-type dopant concentration of the n-type nitride semiconductor layer 100. The carbon shock layer 110 may include an electron trap center capable of accepting electrons in the light emitting diode, since the carbon shock layer 110 contains a carbon atom that is in the IV group at the position of the nitrogen atom. The electron trap center interferes with the vertical movement of electrons. Since the n-type dopant concentration of the n-type nitride semiconductor layer 100 is higher than the carbon concentration of the carbon shock layer 110, that is, the electron trap center, the n-type nitride semiconductor layer 100, A part of the electrons injected into the carbon shock layer 110 moves in the horizontal direction while filling the electron trap center of the carbon shock layer 110. As a result, electrons capable of moving to the active layer 120 can be positioned over a wide region of the carbon-shock layer 110, and the probability of electron migration to a wide region of the active layer 120 can be increased. Therefore, the light emitting efficiency of the light emitting diode can be increased.

Further, the carbon shock layer 110 may have a relatively high resistance due to a high carbon concentration. Specifically, the resistance of the carbon shock layer 110 may be greater than the resistance of the n-type nitride semiconductor layer 100. When a reverse voltage is applied to the light emitting diode, the electron trap centers are filled with electrons that move vertically in the semiconductor layer. In other words, it plays a role of hindering the movement of the electrons, so that the effect of the resistance is high. Therefore, when the reverse voltage is applied, the capacitance of the depletion layer increases due to the high resistance of the carbon shock layer 110, and the withstand voltage characteristic against ESD (electrostatic discharge) can be improved.

As a result, when the forward voltage is applied to the carbon shock layer 110, the electron mobility in the horizontal direction increases to improve the current dispersion effect in the light emitting diode. When the reverse voltage is applied, Can be improved.

The carbon concentration of the carbon shock layer 110 may be 1 x 10 16 atoms / cm 3 to 1 x 10 20 atoms / cm 3 . If the carbon concentration exceeds 1 x 10 20 atoms / cm 3 , the carbon source of the carbon-shock layer 110 plays a role of a p-type dopant, so that the internal quantum efficiency decreases.

Specifically, the carbon concentration may be 1 x 10 16 atoms / cm 3 to 5 x 10 18 atoms / cm 3 . When the above range is satisfied, electrons injected from the n-type nitride semiconductor layer 100 when the forward voltage is applied can smoothly fill the electron trap center of the carbon shock layer 110 and move in the horizontal direction. In addition, when an inverse voltage is applied, an electron trap center capable of hindering the movement of electrons may be sufficient, so that the withstand voltage characteristic against ESD can be improved. When the carbon concentration exceeds 5 x 10 18 atoms / cm 3 , electron injection into the active layer 120 may be lowered by an electron trap center not filled with electrons.

More specifically, the carbon concentration may be 1 x 10 16 atoms / cm 3 to 5 x 10 16 atoms / cm 3 . In the forward direction within the above range, the concentration of electrons remaining after filling the electron trap center can be increased, so that the number of electrons supplied to the active layer 120 can be further secured.

The thickness of the carbon shock layer 110 may be 20 nm to 300 nm. When the thickness of the carbon shock layer 110 is less than 20 nm, the electron trap center of the carbon shock layer 110 is not sufficient, so that the vertical movement of the electrons can not be sufficiently controlled, do. When the thickness is less than 20 nm, electrons having passed through the depletion layer when the reverse voltage is applied smoothly pass through the carbon shock layer 110 and can easily reach the n-type nitride semiconductor layer 100, The characteristics are degraded. When the thickness of the carbon shock layer 110 exceeds 300 nm, electron injection into the active layer 120 is reduced by the electron trap center which is not filled with electrons when the forward voltage is applied, so that the internal quantum efficiency is reduced.

The carbon-shock layer 110 may comprise an n-type dopant. In this case, not only the electrons of the n-type nitride semiconductor layer 100 but also the electrons of the carbon shock layer 110 can be injected into the active layer 110, so that the internal quantum efficiency can be increased. In addition, the n-type dopant concentration in the carbon-shock layer 110 may be less than the carbon concentration in the carbon-shock layer 110. When the concentration of the n-type dopant in the carbon shock layer 110 is higher than the concentration of carbon in the carbon shock layer 110, the electron trap center in the carbon shock layer 110 is filled with electrons in the carbon shock layer 110, The effect of improving the horizontal movement of electrons supplied from the nitride semiconductor layer 100 to the carbon shock layer 110 is reduced. The n-type dopant may be Si, but is not limited thereto.

The carbon shock layer 110 may be formed in the following manner. The carbon shock layer 110 can be grown by introducing a Group III atom source such as Al, Ga, In, etc. and a Group V atom source such as N in the growth chamber. TMGa and TEGa may be used as the Ga source, TMAl and TEAl may be used as the Al source, TMIn and TEin may be used as the In source, and NH 3 may be used as the N source. The carbon shock layer 110 can be grown using a technique such as MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), or HVPE (Hydride Vapor Phase Epitaxy). The carbon shock layer 110 can be grown at a relatively low temperature. 3, the growth temperature of the carbon-shock layer 110 may be lower than the growth temperature of the n-type nitride semiconductor layer 100 and / or the growth temperature of the active layer 120. Referring to FIG. When growing at a low temperature, the carbon contained in the methyl or ethyl, which is a ligand constituting the Group III atomic source, is not dissociated from the atomic source and is introduced into the growth crystal and doped into the carbon shock layer 110. For example, the carbon shock layer 110 can be grown at a temperature of 900 ° C or lower, unlike the n-type nitride semiconductor layer 100 grown using TEGa as a Ga source and growing at 1000 ° C or higher by MOCVD . Preferably, the carbon shock layer 110 can grow below 850 < 0 > C. Since TEGa contains triethyl as a ((C 2 H 5 ) 3 ) ligand in a Ga metal, doping of carbon is easier than using TMGa containing methyl as a ligand. When grown at a temperature higher than the above temperature range, most of carbon is formed separately from Ga, so that the carbon concentration of the semiconductor layer is not high. When the temperature range is satisfied, the carbon shock layer 110 may contain carbon at a high concentration.

The growth pressure of the carbon shock layer 110 may be lower than the growth pressure of the n-type nitride semiconductor layer 100. For example, the n-type nitride semiconductor layer 100 may grow at a pressure greater than 150 torr and the carbon shock layer 110 may grow at a pressure of less than 150 torr. In this case, when the carbon shock layer 110 is formed, the amount of NH 3 injected into the carbon shock layer 110 is reduced, so that the pores of the nitrogen atoms can be more easily filled with carbon. Or the site of the nitrogen atom may be substituted with carbon.

The amount of NH 3 injected when forming the carbon shock layer 110 may be smaller than the amount of NH 3 injected into the n-type nitride semiconductor layer 100. If the amount of NH 3 injected is reduced, the carbon pore density of the carbon shock layer 110 can be increased because the pores of the nitrogen atoms become higher and more carbon can fill the pores or the sites of the nitrogen atoms can be substituted with carbon . For example, injection amount of NH 3 in the n-type nitride semiconductor layer 100 is 50 slm, injection amount of the NH 3 carbon shock layer 110 may be 40 slm.

The carbon-shock layer 110 may comprise a carbon-containing dopant. Specifically, at the time of forming the carbon shock layer 110, a carbon-containing dopant such as carbon tetrabromide (CBr 4 ) can be used separately. It can also be applied to growth with HVPE (Hydride Vapor Phase Epitaxy) which does not use an atom source including a carbon-containing ligand.

The active layer 120 may be located on the n-type nitride semiconductor layer 100. The active layer 120 may include a nitride semiconductor such as (Al, Ga, In) N. In addition, the active layer 120 may include a multiple quantum well structure (MQW) in which a well layer and a barrier layer are alternately stacked in at least two or more periods. The barrier layer may comprise a nitride semiconductor having a bandgap energy greater than that of the well layer, so that a number of carriers (electrons and holes) are concentrated in the well layer. This increases the probability that electrons and holes are combined.

The p-type nitride semiconductor layer 130 may be located on the active layer 120. The p-type nitride semiconductor layer 130 may include a nitride semiconductor such as (Al, Ga, In) N. The p-type nitride semiconductor layer 130 may be doped with a conductivity type opposite to that of the n-type nitride semiconductor layer 100, and may have a p-type conductivity type including, for example, a Mg dopant. The p-type nitride semiconductor layer 130 may further include a delta doping layer (not shown) for lowering ohmic contact resistance.

FIG. 2 is a graph showing the compositions of Al, In, and C according to the n-type nitride semiconductor layer 100, the carbon shock layer 110, and the active layer 120. Each graph represents only a rough ratio of the composition of the material represented by the graph in the n-type nitride semiconductor layer 100, the carbon shock layer 110 and the active layer 120, and is not numerically compared with the graphs of other materials . Referring to FIG. 2, the carbon shock layer 110 may have a higher carbon concentration than the n-type nitride semiconductor layer 100 and the active layer 120.

4 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.

The light emitting diode of FIG. 4 is similar to the light emitting diode of FIG. 1 except that it further includes a superlattice layer 140 between the carbon shock layer 110 and the active layer 120. The superlattice layer 140 may be formed by introducing a Group III atom source such as Al, Ga, In, etc. and a Group V atom source such as N into the growth chamber, and repeatedly laminating layers having different compositions. For example, the superlattice layer 140 may include a structure in which an InGaN layer and a GaN layer are repeatedly stacked. The superlattice layer 140 prevents stress and strain due to lattice mismatch from being transmitted to the active layer 140 and prevents defects such as dislocations from propagating to improve crystal quality of the active layer 140. Specifically, lattice mismatching may occur from the interface between the carbon-shocked layer 110 and the n-type nitride semiconductor layer 100 due to the high carbon concentration of the carbon-shocked layer 110. Specifically, since the carbon fills the pores of the nitrogen atoms in the carbon shock layer 110, the lattice constant of the carbon shock layer 110 becomes smaller than the lattice constant of the active layer 120, so that lattice mismatching can occur. The superlattice layer 140 may prevent the stress and strain due to the lattice mismatch from being transmitted to the active layer 140. In general, the superlattice layer contains indium at a concentration corresponding to 20% of the indium concentration of the well layer of the active layer used for the blue light emitting diode. However, in the case of the present invention, in order to more effectively prevent the stress caused by the lattice mismatch between the carbon shock layer 110 and the active layer 120, the superlattice layer has a concentration corresponding to 20% to 50% of the indium concentration of the well layer Of indium.

5 is a cross-sectional view illustrating a light emitting diode according to another embodiment of the present invention.

The light emitting diode of FIG. 5 is similar to the light emitting diode of FIG. 1 except that it further includes an electron dispersion layer 150 between the carbon shock layer 110 and the n-type nitride semiconductor layer 100. The electron dispersion layer 150 may include Al x In y Ga (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1). The electron dispersion layer 150 may include an energy band gap higher than an energy band gap of the n-type nitride semiconductor layer 100. As a result, a two-dimensional electron gas (2DEG) can be formed between the electron dispersion layer 150 and the n-type nitride semiconductor layer 100. Electrons injected from the n-type nitride semiconductor layer 100 can be easily dispersed in the horizontal direction due to the two-dimensional electron gas effect. Therefore, electrons can be uniformly injected over a wide region of the active layer, so that the internal quantum efficiency can be increased. At the same time, electrons gathered in the two-dimensional electron gas can be injected over a wide region of the carbon shock layer 110, so that electrons can effectively fill the electron trap center of the carbon shock layer 110. Accordingly, since the carbon shock layer 110 can serve as another electron dispersion layer 150, the horizontal movement of electrons can be further improved.

The electron dispersion layer 150 has a larger energy band gap and smaller lattice constant than the n-type nitride semiconductor layer 100. Accordingly, the electron dispersion layer 150 may be formed of a superlattice to reduce the stress and strain generated at the interface between the n-type nitride semiconductor layer 100 and the electron dispersion layer 150, The n-type dopant concentration of the n-type nitride semiconductor layer 100 may be higher than the n-type dopant concentration of the n-type nitride semiconductor layer 100.

The electron dispersion layer 150 is positioned between the carbon-shock layer 110 and the n-type nitride semiconductor layer 100, but may be positioned between the carbon-shock layer 110 and the active layer 120. The same effect as in the case where the electron dispersion layer 150 is located between the carbon shock layer 110 and the n-type nitride semiconductor layer 100 can be obtained. In addition, when the electron scattering layer 110 is located between the carbon shock layer 110 and the active layer 120, the concentration of electrons accumulated in the electron dispersion layer 150 can be more uniform over a wide region in the horizontal direction of the light emitting diode. In this case, the light emitting diode may further include a superlattice layer between the active layer 120 and the carbon shock layer 110.

The light emitting diode of the present invention may further include a separate carbon shock layer (not shown) located on the electron dispersion layer 150. As a result, the efficiency of the electron dispersion layer can be further increased. However, since the electron trap center is excessively present and the forward voltage can be increased, it is necessary to control the concentration of the electron trap center by controlling the thickness of the carbon shock layer, formation conditions, and the like.

Claims (20)

an n-type nitride semiconductor layer;
A carbon shock layer positioned on the n-type nitride semiconductor layer;
An active layer located on the carbon shock layer;
And a p-type nitride semiconductor layer disposed on the active layer,
The carbon concentration of the carbon shock layer is 1 x 10 16 atoms / cm 3 to 1 x 10 20 atoms / cm 3 ,
Wherein the carbon shock layer has a thickness of 20 nm to 300 nm. The method according to claim 1,
And the carbon concentration of the carbon shock layer is smaller than the n-type dopant concentration of the n-type nitride semiconductor layer. The method of claim 2,
And the resistance of the carbon shock layer is larger than the resistance of the n-type nitride semiconductor layer. The method according to claim 1,
Wherein the active layer comprises a well layer comprising In,
Further comprising a superlattice layer positioned between the carbon shock layer and the active layer,
Wherein an In concentration of the superlattice layer is 20% to 50% of an In concentration of the well layer. The method according to claim 1,
Wherein the carbon shock layer comprises an n-type dopant,
Wherein the n-type dopant concentration of the carbon shock layer is higher than the carbon concentration Lt; / RTI > The method according to claim 1,
And an electron dispersion layer disposed between the carbon shock layer and the n-type nitride semiconductor layer,
And the bandgap of the electron dispersion layer is larger than the bandgap of the n-type nitride semiconductor layer. The method of claim 6,
And a two-dimensional electron gas layer between the electron dispersion layer and the n-type nitride semiconductor layer. Disposing a substrate in a growth chamber;
Forming an n-type nitride semiconductor layer on the substrate;
Forming a carbon shock layer on the n-type nitride semiconductor layer;
Forming an active layer on the carbon shock layer; And
And forming a p-type nitride semiconductor layer on the active layer,
Forming the carbon-shock layer includes introducing a triethylgallium (TEGa) source into the growth chamber,
Wherein the growth temperature of the carbon shock layer is lower than the growth temperature of the n-type nitride semiconductor layer. The method of claim 8,
Wherein the growth temperature of the carbon shock layer is 850 DEG C or less. The method of claim 8,
The growth pressure of the carbon shock layer is 150 torr or more; The method of claim 8,
Forming the carbon-shock layer further comprises introducing an NH 3 source into the growth chamber,
Wherein the NH 3 source implantation amount introduced at the time of forming the carbon shock layer is smaller than the NH 3 source implantation amount introduced at the time of forming the n-type nitride semiconductor layer. The method of claim 8,
The light emitting diode manufacturing method further comprises the introduction of 4 carbon tetrabromide (CBr 4) in the growth chamber to form the carbon layer shock. The method of claim 8,
Wherein the carbon concentration of the carbon shock layer is smaller than the n-type dopant concentration of the n-type nitride semiconductor layer. 14. The method of claim 13,
Wherein the resistance of the carbon shock layer is greater than the resistance of the n-type nitride semiconductor layer. The method of claim 8,
Further comprising forming a superlattice layer between the carbon shock layer and the active layer,
Wherein the active layer comprises a well layer comprising In,
Wherein the In concentration of the superlattice layer is 20% to 50% of the In concentration of the well layer. The method of claim 8,
Wherein the carbon shock layer comprises an n-type dopant,
Wherein the n-type dopant concentration of the carbon shock layer is higher than the carbon concentration Lt; RTI ID = 0.0 >%< / RTI > The method of claim 8,
And forming an electron dispersion layer between the carbon shock layer and the n-type nitride semiconductor layer,
Wherein a band gap of the electron dispersion layer is larger than a band gap of the n-type nitride semiconductor layer. The method of claim 8,
Wherein the carbon concentration of the carbon shock layer is 1 x 10 16 atoms / cm 3 to 1 x 10 20 atoms / cm 3 . The method of claim 8,
Wherein the carbon shock layer has a thickness of 20 nm to 300 nm. The method of claim 8,
And removing the substrate.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968138A (en) * 2017-11-24 2018-04-27 安徽三安光电有限公司 A kind of iii-nitride light emitting devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968138A (en) * 2017-11-24 2018-04-27 安徽三安光电有限公司 A kind of iii-nitride light emitting devices

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