CN105742415B - Ultraviolet GaN base LED epitaxial structure and its manufacturing method - Google Patents
Ultraviolet GaN base LED epitaxial structure and its manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 94
- 230000004888 barrier function Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000012010 growth Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 230000003698 anagen phase Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 229910002601 GaN Inorganic materials 0.000 description 142
- 238000005516 engineering process Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 241001465805 Nymphalidae Species 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
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Abstract
A kind of ultraviolet GaN base LED epitaxial structure of present invention offer and its manufacturing method, LED epitaxial structure include successively：Substrate；Low temperature buffer layer；U-GaN layers of high temperature；N-GaN layers of high temperature；Low temperature AI GaN/GaN superlattice layers；Low temperature InGaN/AlGaN ultra-violet light-emitting layers；High temperature p-AlGaN electronic barrier layers；High temperature p-GaN layer.The present invention replaces traditional InGaN/GaN stress release layers using low temperature AI GaN/GaN superlattice layers, by adjusting the growth technique of low temperature AI GaN/GaN superlattice layers, V-pits can be generated along dislocation defects, to stop that carrier generates non-radiative recombination in dislocation fault location.
Description
Technical field
The present invention relates to LED technology field more particularly to a kind of ultraviolet GaN base LED epitaxial structures and its manufacturing method.
Background technology
Light emitting diode（Light-Emitting Diode, LED）It is a kind of semiconductor electronic component that can be luminous.It is this
Electronic component occurred early in 1962, can only send out the feux rouges of low luminosity in early days, develop other monochromatic versions later, when
The light that can be sent out to today has spread visible light, infrared ray and ultraviolet light, and luminosity is also increased to comparable luminosity.And purposes also by
It is used as indicator light, display board etc. at the beginning；With being constantly progressive for technology, light emitting diode be widely used in display,
Television set daylighting is decorated and illumination.
With the development of technology, UV LED（UV LED）In biologic medical, authentication, purification (water, sky
Gas etc.) field, computer data storage and military affairs etc. have wide market application prospect.In addition to this, ultraviolet LED
Increasingly paid close attention to by illumination market.Because exciting three primary colors fluorescent powder by ultraviolet LED, the white of general lighting can get
Light.Presently commercially available white light LEDs are to excite the fluorescent powder of yellow light to obtain by blue led mostly, and wherein red light composition is weaker.
However, since there are 16% lattice mismatches and larger coefficient of thermal expansion differences between Sapphire Substrate and gallium nitride
It is different, when using MOCVD technology epitaxial growth GaN crystals, generate line dislocation（threading dislocations）Density it is high
Up to 108-1010/cm2.In order to avoid non-radiative recombination occurs for carrier fault in place, to influence the luminous efficiency of LED, usually
The InGaN/GaN stress release layers of one layer of low temperature can be inserted between n-type GaN layer and mqw light emitting layer.The stress release layer
V-type hole can be generated along dislocation defects（V-pits）, V-type hole side energy gap compare plane（The faces c）It is higher by very much, in place
Wrong fault location forms potential barrier, avoids carrier from being captured close to dislocation, to promote the luminous efficiency of LED.
However, for 365 ~ 390nm it is ultraviolet for can have another question.Gallium nitride (GaN) energy gap is
3.42eV, the light of corresponding wavelength about 365nm do not have absorption to 365 ~ 390nm this wave band, but the InGaN/ of low temperature
GaN stress release layers may have stronger absorption to the light of this wave band, to reduce the luminous efficiency of LED.
In view of this, in order to solve the above-mentioned technical problem, it is necessary to provide a kind of ultraviolet GaN base LED epitaxial structure and its
Manufacturing method.
Invention content
The purpose of the present invention is to provide a kind of ultraviolet GaN base LED epitaxial structure and its manufacturing method, the present invention is using low
Warm AlGaN/GaN superlattice layers replace traditional InGaN/GaN stress release layers, by adjusting the life of AlGaN/GaN superlattices
Long technique can generate V-pits along dislocation defects, to stop that carrier generates non-radiative recombination in dislocation fault location.
To achieve the goals above, technical solution provided in an embodiment of the present invention is as follows：
A kind of ultraviolet GaN base LED epitaxial structure, the LED epitaxial structure include successively：
Substrate；
Low temperature buffer layer on the substrate；
U-GaN layers of high temperature on the low temperature buffer layer；
N-GaN layers of high temperature on the high temperature u-GaN layers；
Low temperature AI GaN/GaN superlattice layers on the high temperature n-GaN layers, the low temperature AI GaN/GaN superlattices
Layer includes the low temperature AlGaN layer and low-temperature gan layer being stacked；
Low temperature InGaN/AlGaN ultra-violet light-emitting layers on the low temperature AI GaN/GaN superlattice layers, the low temperature
InGaN/AlGaN ultra-violet light-emitting layers include the low temperature InGaN quantum well layers being stacked and low temperature AI GaN quantum barrier layers, described
The emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layers is 365 ~ 390nm；
High temperature p-AlGaN electronic barrier layers on the low temperature InGaN/AlGaN ultra-violet light-emitting layers；
High temperature p-GaN layer on the high temperature p-AlGaN electronic barrier layers.
As a further improvement on the present invention, the low temperature AI GaN/GaN superlattice layers include that 3 ~ 15 period stackings are set
The low temperature AlGaN layer and low-temperature gan layer set.
As a further improvement on the present invention, in the low temperature AI GaN/GaN superlattice layers, every layer of low temperature AlGaN layer
Thickness is 1 ~ 5nm, and the thickness of every layer of low-temperature gan layer is 1 ~ 5nm.
As a further improvement on the present invention, in the low temperature AI GaN/GaN superlattice layers low temperature AlGaN layer Al components
It is 0.01 ~ 0.05.
As a further improvement on the present invention, the low temperature InGaN/AlGaN ultra-violet light-emitting layers include 6 ~ 10 period layers
The low temperature InGaN quantum well layers and low temperature AI GaN quantum barrier layers of folded setting.
As a further improvement on the present invention, in the low temperature InGaN/AlGaN ultra-violet light-emitting layers, every layer of low temperature InGaN
The thickness of quantum well layer is 2 ~ 4nm, and the thickness of every layer of low temperature AI GaN quantum barrier layer is 6 ~ 12nm.
As a further improvement on the present invention, low temperature AI GaN quantum are built in the low temperature InGaN/AlGaN ultra-violet light-emitting layers
The Al groups of layer are divided into 0.05 ~ 0.25.
As a further improvement on the present invention, low temperature InGaN Quantum Well in the low temperature InGaN/AlGaN ultra-violet light-emitting layers
The In groups of layer are divided into 0 ~ 0.09.
As a further improvement on the present invention, the low temperature buffer layer is low-temperature gan layer or low temperature AlGaN layer.
Correspondingly, a kind of manufacturing method of ultraviolet GaN base LED epitaxial structure, the described method comprises the following steps：
S1, substrate is placed on the load plate in MOCVD reative cells, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2, under the conditions of 500 ~ 550 DEG C, 200 ~ 500Torr, the low temperature buffer layer of 10 ~ 30nm of epitaxial growth；
S3, under the conditions of 1040 ~ 1100 DEG C, 100 ~ 300Torr, grow 2 ~ 4um u-GaN layers of high temperature；
S4, under the conditions of 1040 ~ 1070 DEG C, 100 ~ 200Torr, grow n-GaN layers of the high temperature of 2 ~ 4um, doping concentration is
5E18~1E19；
S5, under the conditions of 700 ~ 800 DEG C, 200 ~ 300Torr, grow 1 ~ 5nm low temperature AlGaN layer and 1 ~ 5nm low temperature
GaN layer, wherein the Al groups in low temperature AlGaN layer are divided into 0.01 ~ 0.05, and 3 ~ 15 periods of repeated growth form low temperature AI GaN/
GaN superlattice layers；
S6, under the conditions of 750 ~ 900 DEG C, 200 ~ 300Torr, grow 6 ~ 12nm low temperature AI GaN quantum barrier layers and 2 ~ 4nm
Low temperature InGaN quantum well layers, wherein the Al groups in low temperature AI GaN quantum barrier layers are divided into 0.05 ~ 0.25, repeated growth 6 ~ 10
A period, the In groups adjusted in low temperature InGaN quantum well layers are divided into 0 ~ 0.09, form the low temperature that emission wavelength is 365 ~ 390nm
InGaN/AlGaN ultra-violet light-emitting layers；
S7, under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr, grow 30 ~ 60nm high temperature p-AlGaN electronic barrier layers；
S8, under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr, grow 30 ~ 50nm high temperature p-GaN layer.
Compared with prior art, the present invention replaces traditional InGaN/GaN stress using low temperature AI GaN/GaN superlattice layers
Releasing layer can generate V-pits by adjusting the growth technique of low temperature AI GaN/GaN superlattice layers along dislocation defects, from
And stops carrier and generate non-radiative recombination in dislocation fault location；
Further, since AlGaN has higher potential barrier, being inserted into low temperature AI GaN/GaN between luminescent layer at n-GaN layers surpasses
Photoelectrons slow can be contributed to the extending transversely of electric current in the longitudinal of electron injection, further promote the hair of LED by lattice layer
Light efficiency.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments described in invention, for those of ordinary skill in the art, without creative efforts,
Other drawings may also be obtained based on these drawings.
Fig. 1 is the structural schematic diagram of ultraviolet GaN base LED epitaxial structure in the present invention；
Fig. 2 is the structural schematic diagram of low temperature AI GaN/GaN superlattice layers in the present invention；
Fig. 3 is the structural schematic diagram of low temperature InGaN/AlGaN ultra-violet light-emitting layers in the present invention.
Specific implementation mode
In order to make those skilled in the art more fully understand the technical solution in the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
The every other embodiment that technical staff is obtained without making creative work, should all belong to protection of the present invention
Range.
Join shown in Fig. 1, the invention discloses a kind of ultraviolet GaN base LED epitaxial structures, include successively from bottom to top：Substrate
10, low temperature buffer layer 20, high temperature u-GaN layers 30, high temperature n-GaN layers 40, low temperature AI GaN/GaN superlattice layers 50, low temperature
InGaN/AlGaN ultra-violet light-emittings layer 60, high temperature p-AlGaN electronic barrier layers 70 and high temperature p-GaN layer 80.Using low temperature
AlGaN/GaN superlattice layers 50 replace traditional InGaN/GaN stress release layers, by adjusting the life of AlGaN/GaN superlattices
Long technique can generate V-pits along dislocation defects, to stop that carrier generates non-radiative recombination in dislocation fault location.
It should be understood that " high temperature " or " low temperature " defined in each epitaxial layer correspond to different epitaxial layers respectively in the present invention
Different temperatures in growth technique, " high temperature " or " low temperature " corresponding range in different epitaxial layers are different.
Specifically, each epitaxial layer of LED epitaxial structure is specifically described below.
Substrate 10, it is preferable that the substrate is graphical sapphire substrate, and certainly, substrate may be plain film sapphire lining
The plain film or patterned substrate of bottom or other materials.
Low temperature buffer layer 20（500 ~ 550 DEG C, grow under the conditions of 200 ~ 500Torr）, low temperature buffer layer 20 is low-temperature gan layer
Or low temperature AlGaN layer etc., the layer thickness are 10 ~ 30nm.
High temperature u-GaN layers 30（1040 ~ 1100 DEG C, grow under the conditions of 100 ~ 300Torr）, which is 2 ~ 4um.
High temperature n-GaN layers 40（1040 ~ 1070 DEG C, grow under the conditions of 100 ~ 200Torr）, which is 2 ~ 4um, doping
A concentration of 5E18 ~ 1E19.
Low temperature AI GaN/GaN superlattice layers 50（700 ~ 800 DEG C, grow under the conditions of 200 ~ 300Torr）, in conjunction with shown in Fig. 2,
Low temperature AI GaN/GaN superlattice layers 50 include the low temperature AlGaN layer 51 being stacked and low-temperature gan layer 52.
Preferably, low temperature AI GaN/GaN superlattice layers 50 include 51 He of low temperature AlGaN layer being stacked in 3 ~ 15 periods
Low-temperature gan layer 52, the thickness of every layer of low temperature AlGaN layer are 1 ~ 5nm, and the thickness of every layer of low-temperature gan layer is 1 ~ 5nm, and low temperature
The Al groups of AlGaN layer are divided into 0.01 ~ 0.05.
Low temperature InGaN/AlGaN ultra-violet light-emittings layer 60（750 ~ 900 DEG C, grow under the conditions of 200 ~ 300Torr）, in conjunction with Fig. 3
Shown, low temperature InGaN/AlGaN ultra-violet light-emitting layers include the low temperature InGaN quantum well layers 61 being stacked and low temperature AI GaN amounts
Sub- barrier layer 62, control In groups be divided into 0 ~ 0.09 so that the emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layers be 365 ~
390nm。
Preferably, low temperature InGaN/AlGaN ultra-violet light-emittings layer 60 includes the low temperature InGaN amounts being stacked in 6 ~ 10 periods
The thickness of sub- well layer 61 and low temperature AI GaN quantum barrier layers 62, every layer of low temperature InGaN quantum well layer is 2 ~ 4nm, every layer of low temperature
The thickness of AlGaN quantum barrier layers is 6 ~ 12nm, and the Al groups of low temperature AI GaN quantum barrier layers are divided into 0.05 ~ 0.25.
High temperature p-AlGaN electronic barrier layers 70（800 ~ 1000 DEG C, grow under the conditions of 100 ~ 400Torr）, which is
30~60nm。
High temperature p-GaN layer 80（800 ~ 1000 DEG C, grow under the conditions of 100 ~ 400Torr）, which is 30 ~ 50nm.
Correspondingly, a kind of manufacturing method of ultraviolet GaN base LED epitaxial structure, specifically includes following steps：
S1, substrate is placed on the load plate in MOCVD reative cells, and high temperature is carried out to substrate at 1080 ~ 1100 DEG C
Processing 5 ~ 10 minutes；
S2, under the conditions of 500 ~ 550 DEG C, 200 ~ 500Torr, the low temperature buffer layer of 10 ~ 30nm of epitaxial growth；
S3, under the conditions of 1040 ~ 1100 DEG C, 100 ~ 300Torr, grow 2 ~ 4um u-GaN layers of high temperature；
S4, under the conditions of 1040 ~ 1070 DEG C, 100 ~ 200Torr, grow n-GaN layers of the high temperature of 2 ~ 4um, doping concentration is
5E18~1E19；
S5, under the conditions of 700 ~ 800 DEG C, 200 ~ 300Torr, grow 1 ~ 5nm low temperature AlGaN layer and 1 ~ 5nm low temperature
GaN layer, wherein the Al groups in low temperature AlGaN layer are divided into 0.01 ~ 0.05, and 3 ~ 15 periods of repeated growth form low temperature AI GaN/
GaN superlattice layers；
S6, under the conditions of 750 ~ 900 DEG C, 200 ~ 300Torr, grow 6 ~ 12nm low temperature AI GaN quantum barrier layers and 2 ~ 4nm
Low temperature InGaN quantum well layers, wherein the Al groups in low temperature AI GaN quantum barrier layers are divided into 0.05 ~ 0.25, repeated growth 6 ~ 10
A period adjusts the In components in low temperature InGaN quantum well layers, forms the low temperature InGaN/ that emission wavelength is 365 ~ 390nm
AlGaN ultra-violet light-emitting layers；
S7, under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr, grow 30 ~ 60nm high temperature p-AlGaN electronic barrier layers；
S8, under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr, grow 30 ~ 50nm high temperature p-GaN layer.
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment one：
Ultraviolet GaN base LED epitaxial structure in the present embodiment includes successively from bottom to top：
Substrate, the substrate are graphical sapphire substrate or plain film Sapphire Substrate.
Low temperature buffer layer（540 DEG C, grow under the conditions of 300Torr）, low temperature buffer layer is low-temperature gan layer, which is
30nm。
U-GaN layers of high temperature（1080 DEG C, grow under the conditions of 200Torr）, which is 3um.
N-GaN layers of high temperature（1060 DEG C, grow under the conditions of 200Torr）, which is 3um, doping concentration 8E18.
Low temperature AI GaN/GaN superlattice layers（750 DEG C, grow under the conditions of 250Torr）, low temperature AI GaN/GaN superlattice layers
Including the low temperature AlGaN layer being stacked and low-temperature gan layer.
Further, low temperature AI GaN/GaN superlattice layers include low temperature AlGaN layer and the low temperature that 10 periods are stacked
GaN layer, the thickness of every layer of low temperature AlGaN layer are 3nm, and the thickness of every layer of low-temperature gan layer is 3nm, and the Al groups of low temperature AlGaN layer
It is divided into 0.03.
Low temperature InGaN/AlGaN ultra-violet light-emitting layers（800 DEG C, grow under the conditions of 250Torr）, low temperature InGaN/AlGaN purples
Outer luminescent layer includes the low temperature InGaN quantum well layers being stacked and low temperature AI GaN quantum barrier layers, controls low temperature InGaN quantum
In groups in well layer are divided into 0.07 or so so that the emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layers is 383nm.
Further, low temperature InGaN/AlGaN ultra-violet light-emittings layer includes the low temperature InGaN quantum being stacked in 7 periods
The thickness of well layer and low temperature AI GaN quantum barrier layers, every layer of low temperature InGaN quantum well layer is 3nm, and every layer of low temperature AI GaN quantum is built
The thickness of layer is 10nm, and the Al groups of low temperature AI GaN quantum barrier layers are divided into 0.20.
High temperature p-AlGaN electronic barrier layers（850 DEG C, grow under the conditions of 200Torr）, which is 50nm.
High temperature p-GaN layer（850 DEG C, grow under the conditions of 200Torr）, which is 40nm.
Correspondingly, the manufacturing method of the ultraviolet GaN base LED epitaxial structure of the present embodiment, specifically includes following steps：
S1, substrate is placed on the load plate in MOCVD reative cells, and high temperature is carried out to substrate at 1080 ~ 1100 DEG C
Processing 5 ~ 10 minutes；
S2, under the conditions of 540 DEG C, 300Torr, the low temperature buffer layer of epitaxial growth 30nm；
S3, under the conditions of 1080 DEG C, 200Torr, grow u-GaN layers of the high temperature of 3um；
S4, under the conditions of 1060 DEG C, 200Torr, grow n-GaN layers of the high temperature of 3um, doping concentration 8E18；
S5, under the conditions of 750 DEG C, 250Torr, grow the low temperature AlGaN layer of 3nm and the low-temperature gan layer of 3nm, wherein low
Al groups in warm AlGaN layer are divided into 0.03, and 10 periods of repeated growth form low temperature AI GaN/GaN superlattice layers；
S6, under the conditions of 800 DEG C, 250Torr, grow the low temperature AI GaN quantum barrier layers of 10nm and the low temperature InGaN of 3nm
Quantum well layer, wherein the Al groups in low temperature AI GaN quantum barrier layers are divided into 0.20, and 7 periods of repeated growth adjust low temperature InGaN
In components in quantum well layer form the low temperature InGaN/AlGaN ultra-violet light-emitting layers that emission wavelength is 383nm；
S7, under the conditions of 850 DEG C, 200Torr, grow the high temperature p-AlGaN electronic barrier layers of 50nm；
S8, under the conditions of 900 DEG C, 200Torr, grow the high temperature p-GaN layer of 40nm.
Embodiment two：
Ultraviolet GaN base LED epitaxial structure in the present embodiment includes successively from bottom to top：
Substrate, the substrate are graphical sapphire substrate or plain film Sapphire Substrate.
Low temperature buffer layer（540 DEG C, grow under the conditions of 300Torr）, low temperature buffer layer is low-temperature gan layer, which is
30nm。
U-GaN layers of high temperature（1080 DEG C, grow under the conditions of 200Torr）, which is 3um.
N-GaN layers of high temperature（1060 DEG C, grow under the conditions of 200Torr）, which is 3um, doping concentration 8E18.
Low temperature AI GaN/GaN superlattice layers（750 DEG C, grow under the conditions of 250Torr）, low temperature AI GaN/GaN superlattice layers
Including the low temperature AlGaN layer being stacked and low-temperature gan layer.
Further, low temperature AI GaN/GaN superlattice layers include low temperature AlGaN layer and the low temperature that 15 periods are stacked
GaN layer, the thickness of every layer of low temperature AlGaN layer are 2nm, and the thickness of every layer of low-temperature gan layer is 2nm, and the Al groups of low temperature AlGaN layer
It is divided into 0.02.
Low temperature InGaN/AlGaN ultra-violet light-emitting layers（800 DEG C, grow under the conditions of 250Torr）, low temperature InGaN/AlGaN purples
Outer luminescent layer includes the low temperature InGaN quantum well layers being stacked and low temperature AI GaN quantum barrier layers, controls low temperature InGaN quantum
In groups in well layer are divided into 0.08 or so so that the emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layers is 387nm.
Further, low temperature InGaN/AlGaN ultra-violet light-emittings layer includes the low temperature InGaN quantum being stacked in 9 periods
The thickness of well layer and low temperature AI GaN quantum barrier layers, every layer of low temperature InGaN quantum well layer is 2nm, and every layer of low temperature AI GaN quantum is built
The thickness of layer is 12nm, and the Al groups of low temperature AI GaN quantum barrier layers are divided into 0.15.
High temperature p-AlGaN electronic barrier layers（850 DEG C, grow under the conditions of 200Torr）, which is 50nm.
High temperature p-GaN layer（850 DEG C, grow under the conditions of 200Torr）, which is 40nm.
Correspondingly, the manufacturing method of the ultraviolet GaN base LED epitaxial structure of the present embodiment, specifically includes following steps：
S1, substrate is placed on the load plate in MOCVD reative cells, and high temperature is carried out to substrate at 1080 ~ 1100 DEG C
Processing 5 ~ 10 minutes；
S2, under the conditions of 540 DEG C, 300Torr, the low temperature buffer layer of epitaxial growth 30nm；
S3, under the conditions of 1080 DEG C, 200Torr, grow u-GaN layers of the high temperature of 3um；
S4, under the conditions of 1060 DEG C, 200Torr, grow n-GaN layers of the high temperature of 3um, doping concentration 8E18；
S5, under the conditions of 750 DEG C, 250Torr, grow the low temperature AlGaN layer of 2nm and the low-temperature gan layer of 2nm, wherein low
Al groups in warm AlGaN layer are divided into 0.02, and 15 periods of repeated growth form low temperature AI GaN/GaN superlattice layers；
S6, under the conditions of 800 DEG C, 250Torr, grow the low temperature AI GaN quantum barrier layers of 12nm and the low temperature InGaN of 2nm
Quantum well layer, wherein the Al groups in low temperature AI GaN quantum barrier layers are divided into 0.15, and 9 periods of repeated growth adjust low temperature InGaN
In components in quantum well layer form the low temperature InGaN/AlGaN ultra-violet light-emitting layers that emission wavelength is 383nm；
S7, under the conditions of 850 DEG C, 200Torr, grow the high temperature p-AlGaN electronic barrier layers of 50nm；
S8, under the conditions of 900 DEG C, 200Torr, grow the high temperature p-GaN layer of 40nm.
For embodiment one compared with embodiment two, only low temperature AI GaN/GaN superlattice layers and low temperature InGaN/AlGaN is ultraviolet
The structure of luminescent layer and component difference, the structure of remaining epitaxial layer are identical with thickness etc..
Due to the light inspired in quantum well layer, it is necessary to which multiple epitaxial layers across LED epitaxial structure can be just launched into
Outside, if the band gap of the epitaxial layer on the propagation path of light be less than or similar to Quantum Well band gap when, will occur tight
The light absorption of weight.The energy gap of AlGaN can be from 365 nm from 3.4 eV (GaN) ~ 6.2 eV (AlN), corresponding wavelength
(GaN) ~ 200 nm (AlN), therefore absorption is not had to the black light of 365 ~ 390nm this wave band.
The present invention replaces traditional InGaN/GaN stress release layers using low temperature AI GaN/GaN superlattice layers, by adjusting
The growth technique of low temperature AI GaN/GaN superlattice layers can generate V-pits, to stop that carrier is in place along dislocation defects
Wrong fault location generates non-radiative recombination；
Further, since AlGaN has higher potential barrier, being inserted into low temperature AI GaN/GaN between luminescent layer at n-GaN layers surpasses
Photoelectrons slow can be contributed to the extending transversely of electric current in the longitudinal of electron injection, further promote the hair of LED by lattice layer
Light efficiency.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Profit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent requirements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiment being appreciated that.
Claims (10)
1. a kind of ultraviolet GaN base LED epitaxial structure, which is characterized in that the LED epitaxial structure includes successively：
Substrate；
Low temperature buffer layer on the substrate, the low temperature buffer layer are under the conditions of 500 ~ 550 DEG C, 200 ~ 500Torr
It grows and obtains；
U-GaN layers of high temperature on the low temperature buffer layer, described high temperature u-GaN layers for 1040 ~ 1100 DEG C, 100 ~
It grows and obtains under the conditions of 300Torr；
N-GaN layers of high temperature on the high temperature u-GaN layers, described high temperature n-GaN layers 1040 ~ 1070 DEG C, 100 ~
It grows and obtains under the conditions of 200Torr；
Low temperature AI GaN/GaN superlattice layers on the high temperature n-GaN layers, the low temperature AI GaN/GaN superlattice layer packets
Include the low temperature AlGaN layer and low-temperature gan layer being stacked, the low temperature AI GaN/GaN superlattice layers be 700 ~ 800 DEG C, 200
It grows and obtains under the conditions of ~ 300Torr；
Low temperature InGaN/AlGaN ultra-violet light-emitting layers on the low temperature AI GaN/GaN superlattice layers, the low temperature InGaN/
AlGaN ultra-violet light-emitting layers include the low temperature InGaN quantum well layers being stacked and low temperature AI GaN quantum barrier layers, the low temperature
The emission wavelength of InGaN/AlGaN ultra-violet light-emitting layers be 365 ~ 390nm, the low temperature InGaN/AlGaN ultra-violet light-emitting layers be
750 ~ 900 DEG C, grow and obtain under the conditions of 200 ~ 300Torr；
High temperature p-AlGaN electronic barrier layers on the low temperature InGaN/AlGaN ultra-violet light-emitting layers, the high temperature p-
AlGaN electronic barrier layers obtain to be grown under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr；
High temperature p-GaN layer on the high temperature p-AlGaN electronic barrier layers, the high temperature p-GaN layer are 800 ~ 1000
DEG C, grow and obtain under the conditions of 100 ~ 400Torr.
2. ultraviolet GaN base LED epitaxial structure according to claim 1, which is characterized in that the low temperature AI GaN/GaN is super
Lattice layer includes the low temperature AlGaN layer and low-temperature gan layer being stacked in 3 ~ 15 periods.
3. ultraviolet GaN base LED epitaxial structure according to claim 2, which is characterized in that the low temperature AI GaN/GaN is super
In lattice layer, the thickness of every layer of low temperature AlGaN layer is 1 ~ 5nm, and the thickness of every layer of low-temperature gan layer is 1 ~ 5nm.
4. ultraviolet GaN base LED epitaxial structure according to claim 1, which is characterized in that the low temperature AI GaN/GaN is super
The Al groups of low temperature AlGaN layer are divided into 0.01 ~ 0.05 in lattice layer.
5. ultraviolet GaN base LED epitaxial structure according to claim 1, which is characterized in that the low temperature InGaN/AlGaN
Ultra-violet light-emitting layer includes low temperature InGaN quantum well layers and the low temperature AI GaN quantum barrier layers that 6 ~ 10 periods are stacked.
6. ultraviolet GaN base LED epitaxial structure according to claim 5, which is characterized in that the low temperature InGaN/AlGaN
In ultra-violet light-emitting layer, the thickness of every layer of low temperature InGaN quantum well layer is 2 ~ 4nm, and the thickness of every layer of low temperature AI GaN quantum barrier layer is
6~12nm。
7. ultraviolet GaN base LED epitaxial structure according to claim 1, which is characterized in that the low temperature InGaN/AlGaN
The Al groups of low temperature AI GaN quantum barrier layers are divided into 0.05 ~ 0.25 in ultra-violet light-emitting layer.
8. ultraviolet GaN base LED epitaxial structure according to claim 1, which is characterized in that the low temperature InGaN/AlGaN
The In groups of low temperature InGaN quantum well layers are divided into 0 ~ 0.09 in ultra-violet light-emitting layer.
9. ultraviolet GaN base LED epitaxial structure according to claim 1, which is characterized in that the low temperature buffer layer is low temperature
GaN layer or low temperature AlGaN layer.
10. a kind of manufacturing method of ultraviolet GaN base LED epitaxial structure, which is characterized in that the described method comprises the following steps：
S1, substrate is placed on the load plate in MOCVD reative cells, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2, under the conditions of 500 ~ 550 DEG C, 200 ~ 500Torr, the low temperature buffer layer of 10 ~ 30nm of epitaxial growth；
S3, under the conditions of 1040 ~ 1100 DEG C, 100 ~ 300Torr, grow 2 ~ 4um u-GaN layers of high temperature；
S4, under the conditions of 1040 ~ 1070 DEG C, 100 ~ 200Torr, grow 2 ~ 4um n-GaN layer of high temperature, doping concentration for 5E18 ~
1E19；
S5, under the conditions of 700 ~ 800 DEG C, 200 ~ 300Torr, grow 1 ~ 5nm low temperature AlGaN layer and 1 ~ 5nm low temperature GaN
Layer, wherein the Al groups in low temperature AlGaN layer are divided into 0.01 ~ 0.05, and 3 ~ 15 periods of repeated growth form low temperature AI GaN/GaN
Superlattice layer；
S6, under the conditions of 750 ~ 900 DEG C, 200 ~ 300Torr, grow 6 ~ 12nm low temperature AI GaN quantum barrier layers and 2 ~ 4nm it is low
Warm InGaN quantum well layers, wherein the Al groups in low temperature AI GaN quantum barrier layers are divided into 0.05 ~ 0.25,6 ~ 10 week of repeated growth
Phase, the In groups adjusted in low temperature InGaN quantum well layers are divided into 0 ~ 0.09, form the low temperature that emission wavelength is 365 ~ 390nm
InGaN/AlGaN ultra-violet light-emitting layers；
S7, under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr, grow 30 ~ 60nm high temperature p-AlGaN electronic barrier layers；
S8, under the conditions of 800 ~ 1000 DEG C, 100 ~ 400Torr, grow 30 ~ 50nm high temperature p-GaN layer.
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| CN107482092B (en) * | 2017-07-26 | 2019-05-10 | 南京大学扬州光电研究院 | A kind of extension processing method of 395nm short wavelength UV LED structure |
| CN109509817B (en) * | 2018-10-31 | 2021-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN109980056B (en) * | 2019-02-28 | 2020-10-09 | 华灿光电(苏州）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof |
| CN111370548B (en) * | 2020-03-27 | 2021-06-29 | 中国科学院半导体研究所 | Gallium nitride based ultraviolet light emitting device for inhibiting reverse electric leakage and manufacturing method thereof |
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| CN205385037U (en) * | 2016-03-01 | 2016-07-13 | 聚灿光电科技股份有限公司 | Ultraviolet gan base led epitaxial structure |
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