CN105742415A - Ultraviolet GaN-based LED epitaxy structure and manufacturing method thereof - Google Patents
Ultraviolet GaN-based LED epitaxy structure and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides an ultraviolet GaN-based LED epitaxy structure and a manufacturing method thereof. The LED epitaxy structure sequentially comprises a substrate, a low-temperature buffer layer, a high-temperature u-GaN layer, a high-temperature n-GaN layer, a low-temperature AlGaN/GaN superlattice layer, a low-temperature InGaN/AlGaN ultraviolet light-emitting layer, a high-temperature p-AlGaN electron blocking layer and a high-temperature p-GaN layer. A traditional InGaN/GaN stress release layer is replaced with the low-temperature AlGaN/GaN superlattice layer; and V-pits can be generated along dislocation defects by adjusting the growth technology of the low-temperature AlGaN/GaN superlattice layer, so that current carriers are prevented from generating nonradiative recombination on the dislocation defects.
Description
Technical field
The present invention relates to LED technology field, particularly relate to a kind of ultraviolet GaN base LED epitaxial structure and manufacture method thereof.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.This electronic component occurred as far back as 1962, can only send the HONGGUANG of low luminosity in early days, develop other monochromatic versions afterwards, and the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as display lamp, display panel etc.；Along with the continuous progress of technology, light emitting diode has been widely used in display, television set daylighting decoration and illumination.
Along with the development of technology, UV LED (UV LED) has wide market application foreground at aspects such as biologic medical, authentication, purification (water, air etc.) field, computer data storage and military affairs.In addition, ultraviolet LED is the most increasingly paid close attention to by illumination market.Because exciting three primary colors fluorescent powder by ultraviolet LED, the white light of general lighting can be obtained.Presently commercially available white light LEDs is to excite the fluorescent material of gold-tinted to obtain by blue led mostly, and wherein red light composition is more weak.
But, owing to there is the lattice mismatch of 16% and bigger thermal expansion coefficient difference between Sapphire Substrate and gallium nitride, when utilizing MOCVD technology epitaxial growth GaN crystal, produce line dislocation (threading
Dislocations) density is up to 108-1010/cm2.In order to avoid carrier fault in place generation non-radiative recombination, thus affect the luminous efficiency of LED, it will usually between n-type GaN layer and mqw light emitting layer, insert the InGaN/GaN stress release layer of one layer of low temperature.This stress release layer can produce V-type hole (V-pits) along dislocation defects, and the energy gap of side, V-type hole to exceed a lot than plane (c face), forms potential barrier at dislocation fault location, it is to avoid carrier is captured near dislocation, thus promotes the luminous efficiency of LED.
But, another one problem can be there is for the ultraviolet of 365 ~ 390nm.Gallium nitride (GaN)
Energy gap is 3.42eV, the light of corresponding wavelength about 365nm, and this wave band of 365 ~ 390nm do not has absorption, but the InGaN/GaN stress release layer of low temperature, the light of this wave band may there be is stronger absorption, thus reduce the luminous efficiency of LED.
In view of this, in order to solve above-mentioned technical problem, it is necessary to provide a kind of ultraviolet GaN base LED epitaxial structure and manufacture method thereof.
Summary of the invention
It is an object of the invention to provide a kind of ultraviolet GaN base LED epitaxial structure and manufacture method thereof, the present invention uses low temperature AI GaN/GaN superlattice layer to replace traditional InGaN/GaN stress release layer, by adjusting the growth technique of AlGaN/GaN superlattices, V-pits can be produced along dislocation defects, thus stop that carrier produces non-radiative recombination at dislocation fault location.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of ultraviolet GaN base LED epitaxial structure, described LED epitaxial structure includes successively:
Substrate；
It is positioned at the low temperature buffer layer on described substrate；
The high temperature u-GaN layer being positioned on described low temperature buffer layer；
It is positioned at the high temperature n-GaN layer on described high temperature u-GaN layer；
Being positioned at the low temperature AI GaN/GaN superlattice layer on described high temperature n-GaN layer, described low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer that stacking arranges；
The low temperature InGaN/AlGaN ultra-violet light-emitting layer being positioned on described low temperature AI GaN/GaN superlattice layer, described low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer that stacking arranges, and the emission wavelength of described low temperature InGaN/AlGaN ultra-violet light-emitting layer is 365 ~ 390nm；
It is positioned at the high temperature p-AlGaN electronic barrier layer on described low temperature InGaN/AlGaN ultra-violet light-emitting layer；
It is positioned at the high temperature p-GaN layer on described high temperature p-AlGaN electronic barrier layer.
As a further improvement on the present invention, described low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer of 3 ~ 15 cycle stackings settings.
As a further improvement on the present invention, in described low temperature AI GaN/GaN superlattice layer, the thickness of every layer of low temperature AI GaN layer is 1 ~ 5nm, and the thickness of every layer of low-temperature gan layer is 1 ~ 5nm.
As a further improvement on the present invention, in described low temperature AI GaN/GaN superlattice layer, the Al component of low temperature AI GaN layer is 0.01 ~ 0.05.
As a further improvement on the present invention, described low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer of 6 ~ 10 cycle stackings settings.
As a further improvement on the present invention, in described low temperature InGaN/AlGaN ultra-violet light-emitting layer, the thickness of every layer of low temperature InGaN quantum well layer is 2 ~ 4nm, and the thickness of every layer of low temperature AI GaN quantum barrier layer is 6 ~ 12nm.
As a further improvement on the present invention, in described low temperature InGaN/AlGaN ultra-violet light-emitting layer, the Al component of low temperature AI GaN quantum barrier layer is 0.05 ~ 0.25.
As a further improvement on the present invention, in described low temperature InGaN/AlGaN ultra-violet light-emitting layer, the In component of low temperature InGaN quantum well layer is 0 ~ 0.09.
As a further improvement on the present invention, described low temperature buffer layer is low-temperature gan layer or low temperature AI GaN layer.
Correspondingly, the manufacture method of a kind of ultraviolet GaN base LED epitaxial structure, said method comprising the steps of:
On S1, load plate substrate being placed in MOCVD reative cell, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the low temperature buffer layer of epitaxial growth 10 ~ 30nm；
S3,1040 ~ 1100 DEG C, under the conditions of 100 ~ 300Torr, the high temperature u-GaN layer of growth 2 ~ 4um；
S4,1040 ~ 1070 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-GaN layer of growth 2 ~ 4um, doping content is 5E18 ~ 1E19；
S5,700 ~ 800 DEG C, under the conditions of 200 ~ 300Torr, the low temperature AI GaN layer of growth 1 ~ 5nm and the low-temperature gan layer of 1 ~ 5nm, wherein, the Al component in low temperature AI GaN layer is 0.01 ~ 0.05,3 ~ 15 cycles of repeated growth, forms low temperature AI GaN/GaN superlattice layer；
S6,750 ~ 900 DEG C, under the conditions of 200 ~ 300Torr, the low temperature AI GaN quantum barrier layer of growth 6 ~ 12nm and the low temperature InGaN quantum well layer of 2 ~ 4nm, wherein, Al component in low temperature AI GaN quantum barrier layer is 0.05 ~ 0.25,6 ~ 10 cycles of repeated growth, In component in regulation low temperature InGaN quantum well layer is 0 ~ 0.09, forms the low temperature InGaN/AlGaN ultra-violet light-emitting layer that emission wavelength is 365 ~ 390nm；
S7,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 60nm；
S8,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN layer of growth 30 ~ 50nm.
Compared with prior art, the present invention uses low temperature AI GaN/GaN superlattice layer to replace traditional InGaN/GaN stress release layer, by adjusting the growth technique of low temperature AI GaN/GaN superlattice layer, V-pits can be produced along dislocation defects, thus stop that carrier produces non-radiative recombination at dislocation fault location；
Additionally, due to AlGaN has higher potential barrier, between n-GaN layer and luminescent layer, insert low temperature AI GaN/GaN superlattice layer, the longitudinal of electronics injection, photoelectrons slow can be contributed to the extending transversely of electric current, promote the luminous efficiency of LED further.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in describing below is only some embodiments described in the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of medium ultraviolet GaN base LED epitaxial structure of the present invention；
Fig. 2 is the structural representation of low temperature AI GaN/GaN superlattice layer in the present invention；
Fig. 3 is the structural representation of low temperature InGaN/AlGaN ultra-violet light-emitting layer in the present invention.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, all should belong to the scope of protection of the invention.
Shown in ginseng Fig. 1, the invention discloses a kind of ultraviolet GaN base LED epitaxial structure, include the most successively: substrate 10, low temperature buffer layer 20, high temperature u-GaN layer 30, high temperature n-GaN layer 40, low temperature AI GaN/GaN superlattice layer 50, low temperature InGaN/AlGaN ultra-violet light-emitting layer 60, high temperature p-AlGaN electronic barrier layer 70 and high temperature p-GaN layer 80.Use the InGaN/GaN stress release layer that low temperature AI GaN/GaN superlattice layer 50 replacement is traditional, by adjusting the growth technique of AlGaN/GaN superlattices, V-pits can be produced along dislocation defects, thus stop that carrier produces non-radiative recombination at dislocation fault location.
It should be appreciated that the different temperatures in " high temperature " or " low temperature " defined in each epitaxial layer the most corresponding different outer layer growth techniques in the present invention, the scope of " high temperature " or " low temperature " correspondence in different epitaxial layers is different.
Specifically, below each epitaxial layer of LED epitaxial structure is specifically described.
Substrate 10, it is preferable that this substrate is graphical sapphire substrate, certainly, substrate can also be plain film Sapphire Substrate or the plain film of other materials or patterned substrate.
Grow under the conditions of low temperature buffer layer 20(500 ~ 550 DEG C, 200 ~ 500Torr), low temperature buffer layer 20 is low-temperature gan layer or low temperature AI GaN layer etc., and this layer thickness is 10 ~ 30nm.
Grow under the conditions of high temperature u-GaN layer 30(1040 ~ 1100 DEG C, 100 ~ 300Torr), this layer thickness is 2 ~ 4um.
Grow under the conditions of high temperature n-GaN layer 40(1040 ~ 1070 DEG C, 100 ~ 200Torr), this layer thickness is 2 ~ 4um, and doping content is 5E18 ~ 1E19.
Grow under the conditions of low temperature AI GaN/GaN superlattice layer 50(700 ~ 800 DEG C, 200 ~ 300Torr), shown in Fig. 2, low temperature AI GaN/GaN superlattice layer 50 includes low temperature AI GaN layer 51 and the low-temperature gan layer 52 that stacking arranges.
Preferably, low temperature AI GaN/GaN superlattice layer 50 includes low temperature AI GaN layer 51 and the low-temperature gan layer 52 of 3 ~ 15 cycle stackings settings, the thickness of every layer of low temperature AI GaN layer is 1 ~ 5nm, and the thickness of every layer of low-temperature gan layer is 1 ~ 5nm, and the Al component of low temperature AI GaN layer is 0.01 ~ 0.05.
Grow under the conditions of low temperature InGaN/AlGaN ultra-violet light-emitting layer 60(750 ~ 900 DEG C, 200 ~ 300Torr), shown in Fig. 3, low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer 61 and the low temperature AI GaN quantum barrier layer 62 that stacking arranges, controlling In component is 0 ~ 0.09 so that the emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layer is 365 ~ 390nm.
Preferably, low temperature InGaN/AlGaN ultra-violet light-emitting layer 60 includes low temperature InGaN quantum well layer 61 and the low temperature AI GaN quantum barrier layer 62 of 6 ~ 10 cycle stackings settings, the thickness of every layer of low temperature InGaN quantum well layer is 2 ~ 4nm, the thickness of every layer of low temperature AI GaN quantum barrier layer is 6 ~ 12nm, and the Al component of low temperature AI GaN quantum barrier layer is 0.05 ~ 0.25.
Grow under the conditions of high temperature p-AlGaN electronic barrier layer 70(800 ~ 1000 DEG C, 100 ~ 400Torr), this layer thickness is 30 ~ 60nm.
Grow under the conditions of high temperature p-GaN layer 80(800 ~ 1000 DEG C, 100 ~ 400Torr), this layer thickness is 30 ~ 50nm.
Correspondingly, the manufacture method of a kind of ultraviolet GaN base LED epitaxial structure, specifically include following steps:
On S1, the load plate being placed on by substrate in MOCVD reative cell, and at 1080 ~ 1100 DEG C, substrate is carried out high-temperature process 5 ~ 10 minutes；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the low temperature buffer layer of epitaxial growth 10 ~ 30nm；
S3,1040 ~ 1100 DEG C, under the conditions of 100 ~ 300Torr, the high temperature u-GaN layer of growth 2 ~ 4um；
S4,1040 ~ 1070 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-GaN layer of growth 2 ~ 4um, doping content is 5E18 ~ 1E19；
S5,700 ~ 800 DEG C, under the conditions of 200 ~ 300Torr, the low temperature AI GaN layer of growth 1 ~ 5nm and the low-temperature gan layer of 1 ~ 5nm, wherein, the Al component in low temperature AI GaN layer is 0.01 ~ 0.05,3 ~ 15 cycles of repeated growth, forms low temperature AI GaN/GaN superlattice layer；
S6,750 ~ 900 DEG C, under the conditions of 200 ~ 300Torr, the low temperature AI GaN quantum barrier layer of growth 6 ~ 12nm and the low temperature InGaN quantum well layer of 2 ~ 4nm, wherein, Al component in low temperature AI GaN quantum barrier layer is 0.05 ~ 0.25,6 ~ 10 cycles of repeated growth, In component in regulation low temperature InGaN quantum well layer, forms the low temperature InGaN/AlGaN ultra-violet light-emitting layer that emission wavelength is 365 ~ 390nm；
S7,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 60nm；
S8,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN layer of growth 30 ~ 50nm.
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment one:
Ultraviolet GaN base LED epitaxial structure in the present embodiment includes the most successively:
Substrate, this substrate is graphical sapphire substrate or plain film Sapphire Substrate.
Low temperature buffer layer (540 DEG C, 300Torr under the conditions of grow), low temperature buffer layer is low-temperature gan layer, and this layer thickness is 30nm.
High temperature u-GaN layer (1080 DEG C, 200Torr under the conditions of grow), this layer thickness is 3um.
High temperature n-GaN layer (1060 DEG C, 200Torr under the conditions of grow), this layer thickness is 3um, and doping content is 8E18.
Low temperature AI GaN/GaN superlattice layer (750 DEG C, 250Torr under the conditions of grow), low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer that stacking arranges.
Further, low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer of 10 cycle stackings settings, and the thickness of every layer of low temperature AI GaN layer is 3nm, and the thickness of every layer of low-temperature gan layer is 3nm, and the Al component of low temperature AI GaN layer is 0.03.
Low temperature InGaN/AlGaN ultra-violet light-emitting layer (800 DEG C, 250Torr under the conditions of grow), low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer that stacking arranges, the In component controlled in low temperature InGaN quantum well layer is about 0.07 so that the emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layer is 383nm.
Further, low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer of 7 cycle stackings settings, the thickness of every layer of low temperature InGaN quantum well layer is 3nm, the thickness of every layer of low temperature AI GaN quantum barrier layer is 10nm, and the Al component of low temperature AI GaN quantum barrier layer is 0.20.
High temperature p-AlGaN electronic barrier layer (850 DEG C, 200Torr under the conditions of grow), this layer thickness is 50nm.
High temperature p-GaN layer (850 DEG C, 200Torr under the conditions of grow), this layer thickness is 40nm.
Correspondingly, the manufacture method of the present embodiment ultraviolet GaN base LED epitaxial structure, specifically include following steps:
On S1, the load plate being placed on by substrate in MOCVD reative cell, and at 1080 ~ 1100 DEG C, substrate is carried out high-temperature process 5 ~ 10 minutes；
S2,540 DEG C, under the conditions of 300Torr, the low temperature buffer layer of epitaxial growth 30nm；
S3,1080 DEG C, under the conditions of 200Torr, the high temperature u-GaN layer of growth 3um；
S4,1060 DEG C, under the conditions of 200Torr, the high temperature n-GaN layer of growth 3um, doping content is 8E18；
S5,750 DEG C, under the conditions of 250Torr, the low temperature AI GaN layer of growth 3nm and the low-temperature gan layer of 3nm, wherein, the Al component in low temperature AI GaN layer is 0.03,10 cycles of repeated growth, forms low temperature AI GaN/GaN superlattice layer；
S6,800 DEG C, under the conditions of 250Torr, the low temperature AI GaN quantum barrier layer of growth 10nm and the low temperature InGaN quantum well layer of 3nm, wherein, Al component in low temperature AI GaN quantum barrier layer is 0.20,7 cycles of repeated growth, In component in regulation low temperature InGaN quantum well layer, forms the low temperature InGaN/AlGaN ultra-violet light-emitting layer that emission wavelength is 383nm；
S7,850 DEG C, under the conditions of 200Torr, the high temperature p-AlGaN electronic barrier layer of growth 50nm；
S8,900 DEG C, under the conditions of 200Torr, the high temperature p-GaN layer of growth 40nm.
Embodiment two:
Ultraviolet GaN base LED epitaxial structure in the present embodiment includes the most successively:
Substrate, this substrate is graphical sapphire substrate or plain film Sapphire Substrate.
Low temperature buffer layer (540 DEG C, 300Torr under the conditions of grow), low temperature buffer layer is low-temperature gan layer, and this layer thickness is 30nm.
High temperature u-GaN layer (1080 DEG C, 200Torr under the conditions of grow), this layer thickness is 3um.
High temperature n-GaN layer (1060 DEG C, 200Torr under the conditions of grow), this layer thickness is 3um, and doping content is 8E18.
Low temperature AI GaN/GaN superlattice layer (750 DEG C, 250Torr under the conditions of grow), low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer that stacking arranges.
Further, low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer of 15 cycle stackings settings, and the thickness of every layer of low temperature AI GaN layer is 2nm, and the thickness of every layer of low-temperature gan layer is 2nm, and the Al component of low temperature AI GaN layer is 0.02.
Low temperature InGaN/AlGaN ultra-violet light-emitting layer (800 DEG C, 250Torr under the conditions of grow), low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer that stacking arranges, the In component controlled in low temperature InGaN quantum well layer is about 0.08 so that the emission wavelength of low temperature InGaN/AlGaN ultra-violet light-emitting layer is 387nm.
Further, low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer of 9 cycle stackings settings, the thickness of every layer of low temperature InGaN quantum well layer is 2nm, the thickness of every layer of low temperature AI GaN quantum barrier layer is 12nm, and the Al component of low temperature AI GaN quantum barrier layer is 0.15.
High temperature p-AlGaN electronic barrier layer (850 DEG C, 200Torr under the conditions of grow), this layer thickness is 50nm.
High temperature p-GaN layer (850 DEG C, 200Torr under the conditions of grow), this layer thickness is 40nm.
Correspondingly, the manufacture method of the present embodiment ultraviolet GaN base LED epitaxial structure, specifically include following steps:
On S1, the load plate being placed on by substrate in MOCVD reative cell, and at 1080 ~ 1100 DEG C, substrate is carried out high-temperature process 5 ~ 10 minutes；
S2,540 DEG C, under the conditions of 300Torr, the low temperature buffer layer of epitaxial growth 30nm；
S3,1080 DEG C, under the conditions of 200Torr, the high temperature u-GaN layer of growth 3um；
S4,1060 DEG C, under the conditions of 200Torr, the high temperature n-GaN layer of growth 3um, doping content is 8E18；
S5,750 DEG C, under the conditions of 250Torr, the low temperature AI GaN layer of growth 2nm and the low-temperature gan layer of 2nm, wherein, the Al component in low temperature AI GaN layer is 0.02,15 cycles of repeated growth, forms low temperature AI GaN/GaN superlattice layer；
S6,800 DEG C, under the conditions of 250Torr, the low temperature AI GaN quantum barrier layer of growth 12nm and the low temperature InGaN quantum well layer of 2nm, wherein, Al component in low temperature AI GaN quantum barrier layer is 0.15,9 cycles of repeated growth, In component in regulation low temperature InGaN quantum well layer, forms the low temperature InGaN/AlGaN ultra-violet light-emitting layer that emission wavelength is 383nm；
S7,850 DEG C, under the conditions of 200Torr, the high temperature p-AlGaN electronic barrier layer of growth 50nm；
S8,900 DEG C, under the conditions of 200Torr, the high temperature p-GaN layer of growth 40nm.
Embodiment one is compared with embodiment two, and only low temperature AI GaN/GaN superlattice layer is different with component with the structure of low temperature InGaN/AlGaN ultra-violet light-emitting layer, and the structure of remaining epitaxial layer is identical with thickness etc..
Due to the light inspired in quantum well layer, it is necessary to the multiple epitaxial layers through LED epitaxial structure just can be launched into outside, when the band gap if located in the epitaxial layer on propagation path of light is less than or is similar to the band gap of SQW, serious light will be occurred to absorb.The energy gap of AlGaN can be from 3.4 eV (GaN) ~ 6.2 eV (AlN), and corresponding wavelength can be from 365
Nm (GaN) ~ 200 nm (AlN), does not therefore have absorption to the black light of this wave band of 365 ~ 390nm.
The present invention uses low temperature AI GaN/GaN superlattice layer to replace traditional InGaN/GaN stress release layer, by adjusting the growth technique of low temperature AI GaN/GaN superlattice layer, V-pits can be produced along dislocation defects, thus stop that carrier produces non-radiative recombination at dislocation fault location；
Additionally, due to AlGaN has higher potential barrier, between n-GaN layer and luminescent layer, insert low temperature AI GaN/GaN superlattice layer, the longitudinal of electronics injection, photoelectrons slow can be contributed to the extending transversely of electric current, promote the luminous efficiency of LED further.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and without departing from the spirit or essential characteristics of the present invention, it is possible to realize the present invention in other specific forms.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is limited by claims rather than described above, it is intended that all changes fallen in the implication of equivalency and scope of claim included in the present invention.Should not be considered as limiting involved claim by any reference in claim.
In addition, it is to be understood that, although this specification is been described by according to embodiment, but the most each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should can also be formed, through appropriately combined, other embodiments that it will be appreciated by those skilled in the art that as an entirety, the technical scheme in each embodiment by those skilled in the art.
Claims (10)
1. a ultraviolet GaN base LED epitaxial structure, it is characterised in that described LED epitaxial structure includes successively:
Substrate；
It is positioned at the low temperature buffer layer on described substrate；
The high temperature u-GaN layer being positioned on described low temperature buffer layer；
It is positioned at the high temperature n-GaN layer on described high temperature u-GaN layer；
Being positioned at the low temperature AI GaN/GaN superlattice layer on described high temperature n-GaN layer, described low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer that stacking arranges；
The low temperature InGaN/AlGaN ultra-violet light-emitting layer being positioned on described low temperature AI GaN/GaN superlattice layer, described low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer that stacking arranges, and the emission wavelength of described low temperature InGaN/AlGaN ultra-violet light-emitting layer is 365 ~ 390nm；
It is positioned at the high temperature p-AlGaN electronic barrier layer on described low temperature InGaN/AlGaN ultra-violet light-emitting layer；
It is positioned at the high temperature p-GaN layer on described high temperature p-AlGaN electronic barrier layer.
Ultraviolet GaN base LED epitaxial structure the most according to claim 1, it is characterised in that described low temperature AI GaN/GaN superlattice layer includes low temperature AI GaN layer and the low-temperature gan layer of 3 ~ 15 cycle stackings settings.
Ultraviolet GaN base LED epitaxial structure the most according to claim 2, it is characterised in that in described low temperature AI GaN/GaN superlattice layer, the thickness of every layer of low temperature AI GaN layer is 1 ~ 5nm, and the thickness of every layer of low-temperature gan layer is 1 ~ 5nm.
Ultraviolet GaN base LED epitaxial structure the most according to claim 1, it is characterised in that in described low temperature AI GaN/GaN superlattice layer, the Al component of low temperature AI GaN layer is 0.01 ~ 0.05.
Ultraviolet GaN base LED epitaxial structure the most according to claim 1, it is characterised in that described low temperature InGaN/AlGaN ultra-violet light-emitting layer includes low temperature InGaN quantum well layer and the low temperature AI GaN quantum barrier layer of 6 ~ 10 cycle stackings settings.
Ultraviolet GaN base LED epitaxial structure the most according to claim 5, it is characterised in that in described low temperature InGaN/AlGaN ultra-violet light-emitting layer, the thickness of every layer of low temperature InGaN quantum well layer is 2 ~ 4nm, and the thickness of every layer of low temperature AI GaN quantum barrier layer is 6 ~ 12nm.
Ultraviolet GaN base LED epitaxial structure the most according to claim 1, it is characterised in that in described low temperature InGaN/AlGaN ultra-violet light-emitting layer, the Al component of low temperature AI GaN quantum barrier layer is 0.05 ~ 0.25.
Ultraviolet GaN base LED epitaxial structure the most according to claim 1, it is characterised in that in described low temperature InGaN/AlGaN ultra-violet light-emitting layer, the In component of low temperature InGaN quantum well layer is 0 ~ 0.09.
Ultraviolet GaN base LED epitaxial structure the most according to claim 1, it is characterised in that described low temperature buffer layer is low-temperature gan layer or low temperature AI GaN layer.
10. the manufacture method of a ultraviolet GaN base LED epitaxial structure, it is characterised in that said method comprising the steps of:
On S1, load plate substrate being placed in MOCVD reative cell, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the low temperature buffer layer of epitaxial growth 10 ~ 30nm；
S3,1040 ~ 1100 DEG C, under the conditions of 100 ~ 300Torr, the high temperature u-GaN layer of growth 2 ~ 4um；
S4,1040 ~ 1070 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-GaN layer of growth 2 ~ 4um, doping content is 5E18 ~ 1E19；
S5,700 ~ 800 DEG C, under the conditions of 200 ~ 300Torr, the low temperature AI GaN layer of growth 1 ~ 5nm and the low-temperature gan layer of 1 ~ 5nm, wherein, the Al component in low temperature AI GaN layer is 0.01 ~ 0.05,3 ~ 15 cycles of repeated growth, forms low temperature AI GaN/GaN superlattice layer；
S6,750 ~ 900 DEG C, under the conditions of 200 ~ 300Torr, the low temperature AI GaN quantum barrier layer of growth 6 ~ 12nm and the low temperature InGaN quantum well layer of 2 ~ 4nm, wherein, Al component in low temperature AI GaN quantum barrier layer is 0.05 ~ 0.25,6 ~ 10 cycles of repeated growth, In component in regulation low temperature InGaN quantum well layer is 0 ~ 0.09, forms the low temperature InGaN/AlGaN ultra-violet light-emitting layer that emission wavelength is 365 ~ 390nm；
S7,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 60nm；
S8,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN layer of growth 30 ~ 50nm.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170865A (en) * | 2017-05-27 | 2017-09-15 | 安徽三安光电有限公司 | A kind of semiconductor light-emitting elements and preparation method thereof |
| CN107482092A (en) * | 2017-07-26 | 2017-12-15 | 南京大学扬州光电研究院 | A kind of extension processing method of 395nm short wavelength UVs LED structure |
| CN109509817A (en) * | 2018-10-31 | 2019-03-22 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030016526A1 (en) * | 2001-06-29 | 2003-01-23 | Shiro Sakai | Gallium nitride-based light emitting device and method for manufacturing the same |
| CN103887380A (en) * | 2014-03-28 | 2014-06-25 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method of purple-light LED |
| CN205385037U (en) * | 2016-03-01 | 2016-07-13 | 聚灿光电科技股份有限公司 | Ultraviolet gan base led epitaxial structure |
-
2016
- 2016-03-01 CN CN201610114803.9A patent/CN105742415B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030016526A1 (en) * | 2001-06-29 | 2003-01-23 | Shiro Sakai | Gallium nitride-based light emitting device and method for manufacturing the same |
| CN103887380A (en) * | 2014-03-28 | 2014-06-25 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method of purple-light LED |
| CN205385037U (en) * | 2016-03-01 | 2016-07-13 | 聚灿光电科技股份有限公司 | Ultraviolet gan base led epitaxial structure |
Cited By (13)
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| CN107170865B (en) * | 2017-05-27 | 2019-05-14 | 安徽三安光电有限公司 | A kind of semiconductor light-emitting elements and preparation method thereof |
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| CN109980056A (en) * | 2019-02-28 | 2019-07-05 | 华灿光电(苏州）有限公司 | Gallium nitride based LED epitaxial slice and its manufacturing method |
| CN111370548A (en) * | 2020-03-27 | 2020-07-03 | 中国科学院半导体研究所 | Gallium nitride based ultraviolet light emitting device for inhibiting reverse electric leakage and manufacturing method thereof |
| CN111370548B (en) * | 2020-03-27 | 2021-06-29 | 中国科学院半导体研究所 | Gallium nitride based ultraviolet light emitting device for inhibiting reverse electric leakage and manufacturing method thereof |
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