CN105789392A - GaN-based LED epitaxial structure and manufacturing method thereof - Google Patents

GaN-based LED epitaxial structure and manufacturing method thereof Download PDF

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CN105789392A
CN105789392A CN201610272687.3A CN201610272687A CN105789392A CN 105789392 A CN105789392 A CN 105789392A CN 201610272687 A CN201610272687 A CN 201610272687A CN 105789392 A CN105789392 A CN 105789392A
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layer
barrier layer
gan
epitaxial structure
led epitaxial
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陈立人
冯猛
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FOCUS LIGHTINGS TECHNOLOGY Co Ltd
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FOCUS LIGHTINGS TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Abstract

The invention provides a GaN-based LED epitaxial structure and a manufacturing method thereof. The GaN-based LED epitaxial structure successively comprises: a substrate; a buffer layer; a u-GaN layer; an n-type GaN layer; a multi-quantum well luminescent layer; an electron barrier layer; a superlattice light transmission extension layer, wherein the superlattice light transmission extension layer comprises a plurality of AlxInyGa1-x-yN potential well layers and AlwInzGa1-w-zN barrier layers which are stacked in a cycle mode, wherein, in the AlxInyGa1-x-yN potential well layer, the value range of the x is 0 <= x <= 0.5, the value range of the y is 0 <= y <= 0.1, and in the AlwInzGa1-w-zN barrier layer, the value range of the w is 0 < w <= 0.5, the value range of the z is 0 < z <= 0.1; and a p-type GaN layer. According to the GaN-based LED epitaxial structure, the AlxInyGa1-x-yN/AlwInzGa1-w-zN superlattice light transmission extension layer is formed between the electron barrier layer and the p-type GaN layer, thus defects of an epitaxial material can be overcome, and current crowding is alleviated, thereby improving antistatic capacity of a device.

Description

GaN Base LED Epitaxial structure and manufacture method thereof
Technical field
The present invention relates to LED technology field, particularly relate to a kind of GaN base LED epitaxial structure and manufacture method thereof.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic component that can be luminous.This electronic component occurred as far back as 1962, can only send the HONGGUANG of low luminosity in early days, develop other monochromatic versions afterwards, and the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as display lamp, display panel etc.；Along with the continuous progress of technology, light emitting diode has been widely used in display, television set daylighting decoration and illumination.
Ginseng Fig. 1 show the structural representation of GaN base LED epitaxial structure in prior art, includes the most successively: substrate 10 ', cushion 20 ', u-GaN layer 30 ', n-type GaN layer 40 ', multiple quantum well light emitting layer 50 ', electronic barrier layer 60 ' and p type GaN layer 80 '.
GaN base LED epitaxial is grown in Sapphire Substrate, because lattice mismatch is serious, causing defect concentration to be higher than other semi-conducting materials, during quantum trap growth, the lattice mismatch of temperature and InGaN causes defect to increase further so that GaN base LED device antistatic effect is the most on the weak side.
Additionally since shortage conductive substrates so that must be fabricated to parallel distributed architecture when P, N electrode when LED chip makes, it is uneven that this electrode inevitably results in Electric Field Distribution, thus forms so-called electric current choking phenomenon (Current Crowding) so that electric field and electric current that regional area bears are higher, weaken the antistatic effect of chip further.
In view of this, in order to solve above-mentioned technical problem, it is necessary to provide a kind of GaN base LED epitaxial structure and manufacture method thereof.
Summary of the invention
It is an object of the invention to provide a kind of GaN base LED epitaxial structure and manufacture method thereof, by forming Al between electronic barrier layer and p type GaN layerxInyGa1-x-yN/AlwInzGa1-w-zN superlattices printing opacity extension layer, blocks the defect of epitaxial material, slow down the antistatic effect that electric current is jammed and then improves device.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of GaN base LED epitaxial structure, described LED epitaxial structure includes successively:
Substrate；
It is positioned at the cushion on described substrate；
The u-GaN layer being positioned on described cushion；
It is positioned at the n-type GaN layer on described u-GaN layer；
The multiple quantum well light emitting layer being positioned in described n-type GaN layer；
It is positioned at the electronic barrier layer on described multiple quantum well light emitting layer；
The superlattices printing opacity extension layer being positioned on described electronic barrier layer, described superlattices printing opacity extension layer includes the Al that some cycles stackxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, wherein, AlxInyGa1-x-yIn N potential well layer, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, AlwInzGa1-w-zIn N barrier layer, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1；
It is positioned at the p type GaN layer on described superlattices printing opacity extension layer.
As a further improvement on the present invention, described superlattices printing opacity extension layer includes the Al of 6 ~ 20 cycle stackingsxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer.
As a further improvement on the present invention, in described superlattices printing opacity extension layer, AlxInyGa1-x-yThe thickness of N potential well layer is 0.1 ~ 2nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1 ~ 5nm.
As a further improvement on the present invention, described AlxInyGa1-x-yN potential well layer is undoped, p-type doping or the doping of regional area p-type.
As a further improvement on the present invention, described AlwInzGa1-w-zN barrier layer is undoped, p-type doping or the doping of regional area p-type.
As a further improvement on the present invention, described multiple quantum well light emitting layer includes InGaN quantum well layer and the AlInGaN quantum barrier layer that some cycles stack, and wherein the Al component in AlInGaN quantum barrier layer is 0 ~ 0.2, and In component is 0 ~ 0.3.
As a further improvement on the present invention, described multiple quantum well light emitting layer includes InGaN quantum well layer and the AlInGaN quantum barrier layer of 6 ~ 10 cycles stacking, the thickness of InGaN quantum well layer be the thickness of 2 ~ 4nm, AlInGaN quantum barrier layer be 6 ~ 12nm.
Correspondingly, the manufacture method of a kind of GaN base LED epitaxial structure, said method comprising the steps of:
On S1, load plate substrate being placed in MOCVD reative cell, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the cushion of epitaxial growth 10 ~ 30nm；
S3,1040 ~ 1100 DEG C, under the conditions of 100 ~ 300Torr, the u-GaN layer of growth 2 ~ 4um；
S4,1040 ~ 1070 DEG C, under the conditions of 100 ~ 200Torr, the n-type GaN layer of growth 2 ~ 4um, doping content is 5E18 ~ 1E19；
S5,750 ~ 900 DEG C, under the conditions of 100 ~ 300Torr, growth InGaN quantum well layer and AlInGaN quantum barrier layer successively, form multiple quantum well light emitting layer；
S6,750 ~ 900 DEG C, under the conditions of 100 ~ 400Torr, the p-type AlGaN electronic barrier layer of growth 30 ~ 60nm；
S7,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, grow the Al of stacking of some cycles successivelyxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, forms superlattices printing opacity extension layer, wherein, AlxInyGa1-x-yIn N potential well layer, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, AlwInzGa1-w-zIn N barrier layer, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1；
S8,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the p type GaN layer of growth 30 ~ 50nm.
As a further improvement on the present invention, in described step S7, superlattices printing opacity extension layer includes the Al of 6 ~ 20 cycle stackingsxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer.
As a further improvement on the present invention, in described superlattices printing opacity extension layer, AlxInyGa1-x-yThe thickness of N potential well layer is 0.1 ~ 5nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1 ~ 10nm.
Compared with prior art, the present invention is by forming Al between electronic barrier layer and p type GaN layerxInyGa1-x-yN/AlwInzGa1-w-zN superlattices printing opacity extension layer, blocks the defect of epitaxial material, slow down the antistatic effect that electric current is jammed and then improves device；
Additionally, adjusted the quantum level of potential well layer by the value and trap width controlling x and y, adjusted the energy gap of barrier layer by the value controlling w and z, to improve the antistatic effect of superlattices printing opacity extension layer.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in describing below is only some embodiments described in the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of GaN base LED epitaxial structure in prior art；
Fig. 2 is the structural representation of GaN base LED epitaxial structure in the present invention；
Fig. 3 is the structural representation of superlattices printing opacity extension layer in the present invention.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, all should belong to the scope of protection of the invention.
Shown in ginseng Fig. 2, the invention discloses a kind of GaN base LED epitaxial structure, include the most successively: substrate 10, cushion 20, u-GaN layer 30, n-type GaN layer 40, multiple quantum well light emitting layer 50, electronic barrier layer 60, superlattices printing opacity extension layer 70 and p type GaN layer 80.Wherein, superlattices printing opacity extension layer 70 includes the Al that some cycles stackxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, is adjusted the quantum level of potential well layer, is adjusted the energy gap of barrier layer by the value controlling w and z by the value and trap width controlling x and y.
Specifically, below each epitaxial layer of LED epitaxial structure is specifically described.
Substrate 10, it is preferable that this substrate is graphical sapphire substrate, certainly, substrate can also be plain film Sapphire Substrate or the plain film of other materials or patterned substrate.
Grow under the conditions of cushion 20(500 ~ 550 DEG C, 200 ~ 500Torr), cushion 20 is low-temperature gan layer or low temperature AI GaN layer etc., and this layer thickness is 10 ~ 30nm.
Grow under the conditions of u-GaN layer 30(1040 ~ 1100 DEG C, 100 ~ 300Torr), this layer thickness is 2 ~ 4um.
Grow under the conditions of n-type GaN layer 40(1040 ~ 1070 DEG C, 100 ~ 200Torr), this layer thickness is 2 ~ 4um, and doping content is 5E18 ~ 1E19.
Multiple quantum well light emitting layer 50(750 ~ 900 DEG C, grow under the conditions of 100 ~ 300Torr), multiple quantum well light emitting layer includes InGaN quantum well layer and the AlInGaN quantum barrier layer that some cycles stack, wherein the Al component in AlInGaN quantum barrier layer is 0 ~ 0.2, In component is 0 ~ 0.3, makes emission wavelength in required scope by the In component in regulation InGaN quantum well layer.The present invention includes InGaN quantum well layer and the AlInGaN quantum barrier layer of 6 ~ 10 cycles stacking, the thickness of InGaN quantum well layer be the thickness of 2 ~ 4nm, AlInGaN quantum barrier layer be 6 ~ 12nm.
Grow under the conditions of electronic barrier layer 60(750 ~ 900 DEG C, 100 ~ 300Torr), this layer is p-type AlGaN electronic barrier layer, and thickness is 30 ~ 60nm.
Grow under the conditions of superlattices printing opacity extension layer 70(800 ~ 1000 DEG C, 100 ~ 400Torr), shown in ginseng Fig. 3, superlattices printing opacity extension layer 70 includes the Al that some cycles stackxInyGa1-x-yN potential well layer 71 and AlwInzGa1-w-zN barrier layer 72, wherein, AlxInyGa1-x-yIn N potential well layer 71, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, is adjusted the quantum level of potential well layer, Al by the value and trap width controlling x and ywInzGa1-w-zIn N barrier layer 72, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1, is adjusted the energy gap of barrier layer by the value controlling w and z.In the present invention, superlattices printing opacity extension layer includes the Al of 6 ~ 20 cycle stackingsxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, in each cycle, AlxInyGa1-x-yThe thickness of N potential well layer is 0.1 ~ 2nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1 ~ 5nm, effectively slow down electric current choking phenomenon (Current by controlling the thickness of potential well layer and barrier layer Crowding)。
Grow under the conditions of p-type GaN layer 80(800 ~ 1000 DEG C, 100 ~ 400Torr), this layer thickness is 30 ~ 50nm.
Correspondingly, the manufacture method of a kind of GaN base LED epitaxial structure, specifically include following steps:
On S1, load plate substrate being placed in MOCVD reative cell, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the cushion of epitaxial growth 10 ~ 30nm；
S3,1040 ~ 1100 DEG C, under the conditions of 100 ~ 300Torr, the u-GaN layer of growth 2 ~ 4um；
S4,1040 ~ 1070 DEG C, under the conditions of 100 ~ 200Torr, the n-type GaN layer of growth 2 ~ 4um, doping content is 5E18 ~ 1E19；
S5,750 ~ 900 DEG C, under the conditions of 100 ~ 300Torr, grow InGaN quantum well layer and the AlInGaN quantum barrier layer of 6 ~ 10 cycle stackings successively, the thickness of InGaN quantum well layer be the thickness of 2 ~ 4nm, AlInGaN quantum barrier layer be 6 ~ 12nm, formed multiple quantum well light emitting layer；
S6,750 ~ 900 DEG C, under the conditions of 100 ~ 400Torr, the p-type AlGaN electronic barrier layer of growth 30 ~ 60nm；
S7,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, grow the Al of 6 ~ 20 cycles stackings successivelyxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, forms superlattices printing opacity extension layer, wherein, AlxInyGa1-x-yIn N potential well layer, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, AlwInzGa1-w-zIn N barrier layer, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1.AlxInyGa1-x-yThe thickness of N potential well layer is 0.1 ~ 2nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1 ~ 5nm；
S8,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the p type GaN layer of growth 30 ~ 50nm.
Below in conjunction with specific embodiment, the invention will be further described.
GaN base LED epitaxial structure in one specific embodiment of the present invention includes the most successively:
Substrate, this substrate is graphical sapphire substrate.
Cushion (540 DEG C, 300Torr under the conditions of grow), low temperature buffer layer is GaN layer, and this layer thickness is 30nm.
U-GaN layer (1080 DEG C, 200Torr under the conditions of grow), this layer thickness is 3um.
N-type GaN layer (1060 DEG C, 200Torr under the conditions of grow), this layer thickness is 3um, and doping content is 8E18.
Multiple quantum well light emitting layer (800 DEG C, 250Torr under the conditions of grow), including InGaN quantum well layer and the AlInGaN quantum barrier layer of 8 cycles stackings, the thickness of InGaN quantum well layer be the thickness of 3nm, AlInGaN quantum barrier layer be 9nm；
Electronic barrier layer (850 DEG C, 200Torr under the conditions of grow), this layer is p-type AlGaN electronic barrier layer, and thickness is 30nm.
Superlattices printing opacity extension layer (930 DEG C, 100Torr under the conditions of grow), including the Al of 10 cycles stackingsxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, AlxInyGa1-x-yN potential well layer is undoped, AlwInzGa1-w-zN barrier layer is the doping of regional area p-type, wherein, AlxInyGa1-x-yIn N potential well layer, x value is 0, and y value is 0, AlwInzGa1-w-zIn N barrier layer, w value is 0.5, and z value is 0.1, AlxInyGa1-x-yThe thickness of N potential well layer is 1nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1.5nm.
P-type GaN layer (930 DEG C, 200Torr under the conditions of grow), this layer thickness is 40nm.
Correspondingly, the manufacture method of the present embodiment GaN base LED epitaxial structure, specifically include following steps:
On S1, the load plate being placed on by substrate in MOCVD reative cell, and at 1080 ~ 1100 DEG C, substrate is carried out high-temperature process 5 ~ 10 minutes；
S2,540 DEG C, under the conditions of 300Torr, the cushion of epitaxial growth 30nm；
S3,1080 DEG C, under the conditions of 200Torr, the u-GaN layer of growth 3um；
S4,1060 DEG C, under the conditions of 200Torr, the n-type GaN layer of growth 3um, doping content is 8E18；
S5,800 DEG C, under the conditions of 250Torr, the InGaN quantum well layer of growth 3nm and the AlInGaN quantum barrier layer of 9nm, in 8 cycles of repeated growth, form multiple quantum well light emitting layer；
S6,850 DEG C, under the conditions of 200Torr, the p-type AlGaN electronic barrier layer of growth 30nm；
S7,930 DEG C, under the conditions of 100Torr, Al thick for growth 1nm successivelyxInyGa1-x-yN potential well layer and the Al of 1.5nm thicknesswInzGa1-w-zN barrier layer, 10 period-producer superlattices printing opacity extension layers of repeated growth, wherein, AlxInyGa1-x-yIn N potential well layer, x value is 0, and y value is 0, AlwInzGa1-w-zIn N barrier layer, w value is 0.5, and z value is 0.1；
Grow the Al of 6 ~ 20 cycle stackings successivelyxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, forms superlattices printing opacity extension layer, AlxInyGa1-x-yN potential well layer is undoped, AlwInzGa1-w-zN barrier layer is the doping of regional area p-type, wherein, AlxInyGa1-x-yIn N potential well layer, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, AlwInzGa1-w-zIn N barrier layer, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1.AlxInyGa1-x-yThe thickness of N potential well layer is 1nm, AlwInzGa1-w-zThe thickness of N barrier layer is 2nm；
S8,930 DEG C, under the conditions of 200Torr, the p-type GaN layer of growth 40nm.
It should be appreciated that the superlattices printing opacity extension layer in the present embodiment is only a specific embodiment, the value of x, y, w, z can be adjusted within the above range in other embodiments, until the antistatic effect of superlattices printing opacity extension layer is optimal.
It addition, the Al in the present embodimentxInyGa1-x-yN potential well layer is undoped, AlwInzGa1-w-zN barrier layer is the doping of regional area p-type, in other embodiments, AlxInyGa1-x-yN and AlwInzGa1-w-zN barrier layer can be respectively undoped, p-type doping or the doping of regional area p-type, and citing illustrates the most one by one.
In view of the span of each component, Al in the present embodimentxInyGa1-x-yN potential well layer can be the potential well layers such as AlInGaN, InGaN, InGaN and GaN, and AlwInzGa1-w-zN barrier layer is only AlInGaN barrier layer, by control the content of Al component and In component in AlInGaN barrier layer can the energy gap of independent regulation barrier layer, improve the antistatic effect of superlattices printing opacity extension layer.
As can be seen from the above technical solutions, the present invention is by forming Al between electronic barrier layer and p type GaN layerxInyGa1-x-yN/AlwInzGa1-w-zN superlattices printing opacity extension layer, blocks the defect of epitaxial material, slow down the antistatic effect that electric current is jammed and then improves device；
Additionally, adjusted the quantum level of potential well layer by the value and trap width controlling x and y, adjusted the energy gap of barrier layer by the value controlling w and z, to improve the antistatic effect of superlattices printing opacity extension layer.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and without departing from the spirit or essential characteristics of the present invention, it is possible to realize the present invention in other specific forms.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is limited by claims rather than described above, it is intended that all changes fallen in the implication of equivalency and scope of claim included in the present invention.Should not be considered as limiting involved claim by any reference in claim.
In addition, it is to be understood that, although this specification is been described by according to embodiment, but the most each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should can also be formed, through appropriately combined, other embodiments that it will be appreciated by those skilled in the art that as an entirety, the technical scheme in each embodiment by those skilled in the art.

Claims (10)

1. a GaN base LED epitaxial structure, it is characterised in that described LED epitaxial structure includes successively:
Substrate；
It is positioned at the cushion on described substrate；
The u-GaN layer being positioned on described cushion；
It is positioned at the n-type GaN layer on described u-GaN layer；
The multiple quantum well light emitting layer being positioned in described n-type GaN layer；
It is positioned at the electronic barrier layer on described multiple quantum well light emitting layer；
The superlattices printing opacity extension layer being positioned on described electronic barrier layer, described superlattices printing opacity extension layer includes the Al that some cycles stackxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, wherein, AlxInyGa1-x-yIn N potential well layer, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, AlwInzGa1-w-zIn N barrier layer, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1；
It is positioned at the p on described superlattices printing opacity extension layer Type GaN layer.
GaN base LED epitaxial structure the most according to claim 1, it is characterised in that described superlattices printing opacity extension layer includes the Al of 6 ~ 20 cycle stackingsxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer.
GaN base LED epitaxial structure the most according to claim 2, it is characterised in that in described superlattices printing opacity extension layer, AlxInyGa1-x-yThe thickness of N potential well layer is 0.1 ~ 2nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1 ~ 5nm.
GaN base LED epitaxial structure the most according to claim 1, it is characterised in that described AlxInyGa1-x-yN potential well layer is undoped, p-type doping or the doping of regional area p-type.
GaN base LED epitaxial structure the most according to claim 1, it is characterised in that described AlwInzGa1-w-zN barrier layer is undoped, p-type doping or the doping of regional area p-type.
GaN base LED epitaxial structure the most according to claim 1, it is characterized in that, described multiple quantum well light emitting layer includes InGaN quantum well layer and the AlInGaN quantum barrier layer that some cycles stack, and wherein the Al component in AlInGaN quantum barrier layer is 0 ~ 0.2, and In component is 0 ~ 0.3.
GaN base LED epitaxial structure the most according to claim 6, it is characterized in that, described multiple quantum well light emitting layer includes InGaN quantum well layer and the AlInGaN quantum barrier layer of 6 ~ 10 cycles stacking, the thickness of InGaN quantum well layer be the thickness of 2 ~ 4nm, AlInGaN quantum barrier layer be 6 ~ 12nm.
8. the manufacture method of a GaN base LED epitaxial structure, it is characterised in that said method comprising the steps of:
On S1, load plate substrate being placed in MOCVD reative cell, high-temperature process 5 ~ 10 minutes at 1080 ~ 1100 DEG C；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the cushion of epitaxial growth 10 ~ 30nm；
S3,1040 ~ 1100 DEG C, under the conditions of 100 ~ 300Torr, the u-GaN layer of growth 2 ~ 4um；
S4,1040 ~ 1070 DEG C, under the conditions of 100 ~ 200Torr, the n-type GaN layer of growth 2 ~ 4um, doping content is 5E18 ~ 1E19；
S5,750 ~ 900 DEG C, under the conditions of 100 ~ 300Torr, growth InGaN quantum well layer and AlInGaN quantum barrier layer successively, form multiple quantum well light emitting layer；
S6,750 ~ 900 DEG C, under the conditions of 100 ~ 400Torr, the p-type AlGaN electronic barrier layer of growth 30 ~ 60nm；
S7,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, grow the Al of stacking of some cycles successivelyxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer, forms superlattices printing opacity extension layer, wherein, AlxInyGa1-x-yIn N potential well layer, x span is 0≤x≤0.5, and y span is 0≤y≤0.1, AlwInzGa1-w-zIn N barrier layer, w span is 0 ＜ w≤0.5, and z span is 0 ＜ z≤0.1；
S8,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the p type GaN layer of growth 30 ~ 50nm.
The manufacture method of GaN base LED epitaxial structure the most according to claim 8, it is characterised in that in described step S7, superlattices printing opacity extension layer includes the Al of 6 ~ 20 cycle stackingsxInyGa1-x-yN potential well layer and AlwInzGa1-w-zN barrier layer.
The manufacture method of GaN base LED epitaxial structure the most according to claim 9, it is characterised in that in described superlattices printing opacity extension layer, AlxInyGa1-x-yThe thickness of N potential well layer is 0.1 ~ 5nm, AlwInzGa1-w-zThe thickness of N barrier layer is 1 ~ 10nm.
CN201610272687.3A 2016-04-28 2016-04-28 GaN-based LED epitaxial structure and manufacturing method thereof Pending CN105789392A (en)

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