CN104218125A - A method for white LED growth and the white LED prepared by utilizing the growth method - Google Patents
A method for white LED growth and the white LED prepared by utilizing the growth method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 6
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 239000000428 dust Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 4
- 239000003086 colorant Substances 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910005540 GaP Inorganic materials 0.000 description 35
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 230000000802 nitrating effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The invention provides a method for white LED growth. The method described in the invention, on the basis of the traditional method for blue-green light epitaxial growth, utilizes GaP instead of P type GaN, directly utilizes the match between the forbidden band width of the GaP and the quantum well blue - green wavelengths to achieve the purpose of direct growth of the white LED, and the method is simple and useful. The invention also provides a white LED prepared by utilizing the above method for white LED growth. The inventive method's improvement in the traditional method that employs the three primary colors and the blue light coated with yellow phosphor is made by changing the epitaxial growth structure using GaP instead of traditional P type GaN, and is more simply implemented in MOCVD. The wavelength of light emitted from the InGaN/GaN quantum well active region is about 480 nm, and the P type GaP will be excited to generate a yellow light of 550 nm when parts of photons pass through the P type GaP, the partial yellow light and the blue light are compensated with each other to obtain the white light. The method of the invention, in which a general blue-green LED structure is employed for MQW multiple quantum wells and a low temperature GaP is used as the P type GaP, is simple and useful both to obtain the white light and to enhance the light-emitting efficiency without damage to the quantum wells.
Description
Technical field
The growing method that the present invention relates to a kind of white light LEDs and the white light LEDs utilizing this growing method to prepare, the invention belongs to photoelectronic technical field.
Background technology
Compound semiconductor light emitting device (LED) originates from the sixties in 20th century as solid light source.1992, first GaN base blue LED came out; Within 1994, GaN base blue led enters practical stage.The advantages such as LED has that volume is little, luminous efficiency is high, explosion-proof, energy-conservation, long service life.High brightness GaN-based light-emitting diode does not show at large-size screen monitors, vehicle and traffic, LCD light source, have huge application potential in light decoration.
Utilize nitride-based semiconductor to realize forward position focus that panchromatic white light emission system is nitride research and apply always.For common bluish-green luminescent device, utilize nitride multi-quantum pit structure, the light that can only realize high efficiency specific wavelength is launched, and this is that the characteristic of device active region quantum well structure determines.
The white light LEDs of present stage is based on content disclosed in U.S. patent Nos US5998925, based on blue-light LED chip, fill at chip top and can excite the YAG yellow fluorescent powder of 555nm wavelength and transparent dehydration epoxy glue, the gold-tinted that blue-ray LED excitated fluorescent powder produces and blue light complementation, mixing becomes the white light of two wavelength, but adopt this method fluorescent material of short wavelength's deexcitation fluorescent material to lose part energy, and if adopt purple light as excitation source, if encapsulate the bad ultraviolet that will produce is leaked, be unfavorable for that user's is healthy.It is complicated that another this method also makes packaging technology change, and increases the cost of manufacture of white light LEDs.If employing red, green, blue three primary colors diode chip for backlight unit is packaged together, this method makes white light LEDs, and cost of manufacture can be higher.
The III-nitride being representative with GaN, InN, AlN belongs to direct gap semiconductor material, has excellent photoelectric characteristic, is to manufacture indispensable material in short-wave long light-emitting diode (LED), photodetector.The band gap of GaN is the band gap of 3.4 electronvolt (eV), InN is 0.7eV, and the emission wavelength that this bi-material is corresponding lays respectively at ultraviolet and region of ultra-red.Using the alloy material InGaN of GaN and InN composition as the luminescent active region of LED, along with its emission wavelength of change of In component can cover from ultraviolet to infrared whole wave band.
III-nitride be all heteroepitaxy on other materials, conventional substrate has sapphire, carborundum etc., and conventional epitaxy method has metal-organic chemical vapor deposition equipment (MOCVD).Due to the lattice mismatch of substrate and thermal mismatching very large, be all adopt two-step growth method on a sapphire substrate during growing GaN, namely first grow one deck low temperature GaN at low temperatures as resilient coating, be then elevated to the high growth temperature GaN of more than 1000 degrees Celsius.Therefore the structure of existing GaN base LED chip is followed successively by substrate, low temperature GaN buffer, high temperature undoped GaN layer, N-type GaN layer, mqw layer (multiple quantum well layer), P type AlGaN layer and P type GaN layer from the bottom to top, substrate can adopt Sapphire Substrate conventional at present, the still MOCVD that epitaxial growth method is the most frequently used.
Due to the restriction of past in the research level of Material growth technology and material property, semiconductor structure is utilized directly to realize the achievement in research of white light LEDs little.Research report the earliest sees 2002 by Japanese NICHIA company proposition report M.Yamada, Y.Narukawa, and T.Mukai, " Phosphor Free High-Luminous-Efficiency Whitelight-Emitting DiodesComposed of InGaN Multi-Quantum Well Light-Emitting diodes ", Jpn.J.Appl.Phys., Vol.45, No.4A, 2006, pp.2463-2466 this type of research follow-up is few.
Chinese patent document CN1641897A proposes a kind of modification method of white light LEDs, this method utilizes blue-light LED chip to excite mixture that is yellow and red fluorescence powder, make white light LEDs, other some white light LEDs are also be devoted to add other luminescent substances in YAG yellow fluorescent powder, these class methods direct growth can not go out white light LEDs, but obtaining white light by blue-ray LED deexcitation fluorescent material, subsequent technique is complicated and cost is higher.
Chinese patent document CN102751403A proposes a kind of epitaxial structure of special light-emitting diode, namely contains j n-GaN/MQW/p-GaN structure (2≤j≤100) and is connected by MQW between n-GaN and p-GaN.This kind of method growth technique is more complicated, and nGaN grows and easily destroys Multiple Quantum Well (MQW) after quantum well, affects luminous efficiency to a certain extent.
Chinese patent document CN102593290A discloses the manufacture method of a kind of white light LEDs epitaxial wafer and manufacture craft and White-light LED chip, white light LEDs epitaxial wafer forms GaN resilient coating on a sapphire substrate, form green glow N-GaN contact layer on the buffer layer successively, green glow InGaN/GaN multiple quantum well light emitting layer, green glow P-GaN contact layer, blue green light cascading layers, blue light N-GaN contact layer, blue light InGaN/GaN multiple quantum well light emitting layer, blue light P-GaN contact layer, red blue light cascading layers, ruddiness N-GaP current expansion and ohmic contact layer, ruddiness N-AlGaInP transition and lower limit layer, ruddiness Multiple Quantum Well AlGaInP luminescent layer, ruddiness P-AlGaInP upper limiting layer, ruddiness P-GaP current extending, yellow ruddiness cascading layers, gold-tinted N-GaP current expansion and ohmic contact layer, gold-tinted N-AlGaInP transition and lower limit layer, gold-tinted Multiple Quantum Well AlGaInP luminescent layer, gold-tinted P-AlGaInP upper limiting layer and gold-tinted P-GaP current extending.This patent is that the principle of three primary colours is to obtain white light, utilize red, green, yellow three LED strip connection to obtain white light, operating voltage can be caused so too high, cause power-conversion efficiencies low, and it is very low to be injected into the efficiency of green quantum trap according to prior art hole, cause green quantum trap luminous efficiency very low, the white light efficiency that entirety obtains is also just very low.
Summary of the invention
For the deficiencies in the prior art, the present invention proposes a kind of growing method of white light LEDs, method of the present invention is on the basis of the growing method of traditional blue green light extension, utilize GaP to replace P type GaN, the energy gap of GaP and the bluish-green wavelength of quantum well is directly utilized to work in coordination, reach the object that direct growth goes out white light LEDs, the method is simple and practical.
The present invention also provides a kind of white light LEDs utilizing the growing method of above-mentioned white light LEDs to prepare.
Summary of the invention
The energy gap of GaP is about 2.26eV, and corresponding wavelength is 550nm.GaP is indirect gap semiconductor, and its interband probability of recombination is lower, but the bound exciton compound utilizing isoelectronic trap to be formed can obtain quite high luminous efficiency.Such as, toward gallium phosphide nitrating, nitrogen accounts for P position in lattice.Nitrogen, phosphorus belong to V group element together, are etc. electrical, and just nitrogen-atoms outer-shell electron is than few 8 of phosphorus atoms.Like this, the nitrogen-atoms in gallium phosphide lattice on P lattice point is easy to trapped electron, because effect retrapping hole, Coulomb force forms so-called bound exciton to the affinity of electronics than the large of phosphorus atoms.Here it is isoelectronic trap that equivalent electron formed.Its compound tense, can produce effective nearly band gap recombination radiation.Because exciton only includes electron hole, not easily energy passed to other electronics and produce Auger process, therefore isoelectronic trap luminescence also can obtain higher luminous efficiency.
Detailed Description Of The Invention
A growing method for white light LEDs, comprises step as follows:
(1) first adopt conventional low temperature buffer layer growing method growing low temperature GaN resilient coating on a sapphire substrate: namely in the reative cell of MOCVD growth furnace, at 500 DEG C-600 DEG C, grow the thick GaN resilient coating of 20nm-60nm;
After GaN buffer growth, the reaction indoor temperature of MOCVD growth furnace is elevated to 1000 DEG C-1200 DEG C, described GaN resilient coating grows the high temperature undoped GaN layer that 100nm-200nm is thick; Then the GaN layer of the doping Si that growth 2 μm-3 μm is thick, the doping depth scope of described Si is: 1E18 to 5E19;
(2) growth temperature in the reative cell of MOCVD growth furnace is transferred to 700 DEG C-800 DEG C, carrier gas in described reative cell changes nitrogen into, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium growth MQW Multiple Quantum Well, described MQW Multiple Quantum Well comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 8-18, grows the GaN barrier layer of a layer thickness 150 dust-250 dust in the superiors of described MQW Multiple Quantum Well;
(3) the reaction indoor temperature adjusting MOCVD growth furnace is 900 DEG C-1000 DEG C, growing P-type AlGaN layer in described growth MQW Multiple Quantum Well, growth thickness 300 dust-500 dust;
(4) growing P-type GaP layer: the reacting gas in the reative cell of MOCVD growth furnace is become PH
3, the temperature adjusted in described reative cell is 700 DEG C-800 DEG C, passes into phosphine successively, described phosphine flow 30-60L/min, the time passing into phosphine is 30-120 second, then starts formal growing P-type GaP layer, pass into trimethyl gallium, the flow of described trimethyl gallium is 60-200sccm; PH
3flow be 30-100L/min; The flow of two luxuriant magnesium is 100-500sccm, until P type GaP layer growth terminates, the growth thickness of P type GaP layer is 100-500nm.
Preferred according to the present invention, described in step (2), the thickness of GaN barrier layer is 100 dusts, and the thickness of described InGaN well layer is 30 dusts, and the described the superiors in described MQW Multiple Quantum Well grow the GaN barrier layer of a layer thickness 200 dust.
The white light LEDs utilizing the growing method of above-mentioned white light LEDs to prepare, comprises Sapphire Substrate, and growth has GaN resilient coating, undoped GaN layer, N-type GaN layer, MQW Multiple Quantum Well, P type AlGaN layer and P type GaP layer successively on a sapphire substrate.
Preferred according to the present invention, described N-type GaN layer is the GaN layer of doping Si, and the thickness of the GaN layer of described doping Si 2 μm-3 μm, the doping depth scope of described Si is: 1E18 to 5E19.
Preferred according to the present invention, the thickness of described GaN resilient coating is 20nm-60nm; The thickness of described undoped GaN layer is 100nm-200nm;
Described MQW Multiple Quantum Well comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 8-18, the thickness of described GaN barrier layer is 100 dusts, and the thickness of described InGaN well layer is 30 dusts, grows the GaN barrier layer of a layer thickness 200 dust in the superiors of described MQW Multiple Quantum Well; The thickness of described P type AlGaN layer is 300 dust-500 dusts; The thickness of described P type GaP layer is 100-500nm.
Beneficial effect of the present invention:
The present invention utilizes GaP to replace P type GaN, can obtain white light LEDs: be pass into trimethyl gallium, PH when growing P-type by means of only epitaxial growth
3, two luxuriant magnesium (CP
2mg) doped source, growth thickness scope 100-500nm.The present invention changes the method that traditional employing three primary colors and blue light are coated with yellow fluorescent material, by changing epitaxial growth structure, replaces traditional P type GaN to realize with GaP, relatively simple in MOCVD; The wavelength that InGaN/GaN Quantum well active district launches is about 480nm, and partial photonic is through the gold-tinted that P type GaP can be excited during P type GaP to produce about 550nm, and this part gold-tinted and blue light complementation, can obtain white light.The present invention utilizes blue light quantum well to obtain green-yellow light and blue light to obtain white light to excite GaP, and operating voltage is low, and power-conversion efficiencies is high, obtains white light efficiency high.MQW Multiple Quantum Well of the present invention adopts conventional blue green light LED structure, adopts low temperature GaP to make P type, can not damage quantum well, both can obtain white light, can improve luminous efficiency again, simple and practical.
Accompanying drawing explanation
Fig. 1 is growth structure schematic diagram of the present invention;
In Fig. 1,1, Sapphire Substrate; 2, GaN resilient coating; 3, undoped GaN layer; 4, N-type GaN layer; 5, MQW Multiple Quantum Well; 6, P type AlGaN layer; 7, P type GaP layer.
Embodiment
Below in conjunction with embodiment and Figure of description, the invention will be further described, but be not limited thereto.
Embodiment 1,
A growing method for white light LEDs, comprises step as follows:
(1) first adopt conventional low temperature buffer layer growing method growing low temperature GaN resilient coating 2 in Sapphire Substrate 1: namely in the reative cell of MOCVD growth furnace, at 500 DEG C, grow the thick GaN resilient coating 2 of 20nm;
GaN resilient coating 2 is elevated to 1000 DEG C the reaction indoor temperature of MOCVD growth furnace, described GaN resilient coating 2 grows the high temperature undoped GaN layer 3 that 100nm is thick after growing; Then the GaN layer of the doping Si that growth 2 μm is thick, the doping depth scope of described Si is: 1E18 to 5E19;
(2) growth temperature in the reative cell of MOCVD growth furnace is transferred to 700 DEG C, carrier gas in described reative cell changes nitrogen into, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium growth MQW Multiple Quantum Well 5, described MQW Multiple Quantum Well 5 comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 8, the thickness of described GaN barrier layer is 100 dusts, the thickness of described InGaN well layer is 30 dusts, and the described the superiors in described MQW Multiple Quantum Well 5 grow the GaN barrier layer of a layer thickness 200 dust;
(3) the reaction indoor temperature adjusting MOCVD growth furnace is 900 DEG C, growing P-type AlGaN layer 6 in described growth MQW Multiple Quantum Well 5, growth thickness 300 dust-500 dust;
(4) growing P-type GaP layer 7: the reacting gas in the reative cell of MOCVD growth furnace is become PH
3, the temperature adjusted in described reative cell is 700 DEG C, passes into phosphine successively, described phosphine flow 50L/min, and the time passing into phosphine is 30 seconds, then starts formal growing P-type GaP layer, passes into trimethyl gallium, and the flow of described trimethyl gallium is 100sccm; PH
3flow be 50L/min; The flow of two luxuriant magnesium is 400sccm, until the growth of P type GaP layer 7 terminates, the growth thickness of P type GaP layer 7 is 100nm.
Embodiment 2,
A kind of white light LEDs utilizing the growing method of white light LEDs as described in Example 1 to prepare, comprise Sapphire Substrate 1, in Sapphire Substrate 1, growth has GaN resilient coating 2, undoped GaN layer 3, N-type GaN layer 4, MQW Multiple Quantum Well 5, P type AlGaN layer 6 and P type GaP layer 7 successively.
Described N-type GaN layer 4 is the GaN layer of doping Si, and the thickness of the GaN layer of described doping Si 2 μm, the doping depth scope of described Si is: 1E18 to 5E19.The thickness of described GaN resilient coating 2 is 20nm; The thickness of described undoped GaN layer 3 is 100nm; Described MQW Multiple Quantum Well 5 comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 8, the thickness of described GaN barrier layer is 100 dusts, and the thickness of described InGaN well layer is 30 dusts, grows the GaN barrier layer of a layer thickness 200 dust in the superiors of described MQW Multiple Quantum Well 5; The thickness of described P type AlGaN layer 6 is 300 dust-500 dusts; The thickness of described P type GaP layer 7 is 100nm.
Embodiment 3,
The growing method of a kind of white light LEDs as described in Example 1, its difference is:
In described step (1), adopt conventional low temperature buffer layer growing method growing low temperature GaN resilient coating 2 in Sapphire Substrate 1: namely in the reative cell of MOCVD growth furnace, at 600 DEG C, grow the thick GaN resilient coating 2 of 60nm;
GaN resilient coating 2 is elevated to 1200 DEG C the reaction indoor temperature of MOCVD growth furnace, described GaN resilient coating 2 grows the high temperature undoped GaN layer 3 that 200nm is thick after growing;
In described step (2), growth temperature in the reative cell of MOCVD growth furnace is transferred to 800 DEG C, carrier gas in described reative cell changes nitrogen into, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium growth MQW Multiple Quantum Well 5, described MQW Multiple Quantum Well 5 comprises GaN barrier layer and the InGaN well layer of alternating growth, and the alternating growth cycle is 18;
In step (3), the reaction indoor temperature of adjustment MOCVD growth furnace is 1000 DEG C, growing P-type AlGaN layer 6 in described growth MQW Multiple Quantum Well 5, growth thickness 300 dust-500 dust;
In step (4), growing P-type GaP layer 7: the reacting gas in the reative cell of MOCVD growth furnace is become PH
3, the temperature adjusted in described reative cell is 700 DEG C, passes into phosphine successively, described phosphine flow 50L/min, and the time passing into phosphine is 30 seconds, then starts formal growing P-type GaP layer, passes into trimethyl gallium, and the flow of described trimethyl gallium is 100sccm; PH
3for flow is 50L/min, the flow of two luxuriant magnesium is 400sccm, until P type GaP layer growth terminates, the growth thickness of P type GaP layer 7 is 500nm.
Embodiment 4,
A kind of white light LEDs utilizing the growing method of white light LEDs as described in Example 3 to prepare, comprise Sapphire Substrate 1, in Sapphire Substrate 1, growth has GaN resilient coating 2, undoped GaN layer 3, N-type GaN layer 4, MQW Multiple Quantum Well 5, P type AlGaN layer 6 and P type GaP layer 7 successively.
Described N-type GaN layer 4 is the GaN layer of doping Si, and the thickness of the GaN layer of described doping Si 2 μm, the doping depth scope of described Si is: 1E18 to 5E19.
The thickness of described GaN resilient coating 2 is 60nm; The thickness of described undoped GaN layer 3 is 200nm; Described MQW Multiple Quantum Well 5 comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 18, the thickness of described GaN barrier layer is 100 dusts, and the thickness of described InGaN well layer is 30 dusts, grows the GaN barrier layer of a layer thickness 200 dust in the superiors of described MQW Multiple Quantum Well; The thickness of described P type AlGaN layer 6 is 300 dust-500 dusts; The thickness of described P type GaP layer 7 is 500nm.
Claims (8)
1. a growing method for white light LEDs, is characterized in that, it is as follows that the method comprising the steps of:
(1) first adopt conventional low temperature buffer layer growing method growing low temperature GaN resilient coating on a sapphire substrate: namely in the reative cell of MOCVD growth furnace, at 500 DEG C-600 DEG C, grow the thick GaN resilient coating of 20nm-60nm;
After GaN buffer growth, the reaction indoor temperature of MOCVD growth furnace is elevated to 1000 DEG C-1200 DEG C, described GaN resilient coating grows the high temperature undoped GaN layer that 100nm-200nm is thick; Then the GaN layer of the doping Si that growth 2 μm-3 μm is thick, the doping depth scope of described Si is: 1E18 to 5E19;
(2) growth temperature in the reative cell of MOCVD growth furnace is transferred to 700 DEG C-800 DEG C, carrier gas in described reative cell changes nitrogen into, using ammonia as reacting gas, pass into triethyl-gallium and trimethyl indium growth MQW Multiple Quantum Well, described MQW Multiple Quantum Well comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 8-18, grows the GaN barrier layer of a layer thickness 150 dust-250 dust in the superiors of described MQW Multiple Quantum Well;
(3) the reaction indoor temperature adjusting MOCVD growth furnace is 900 DEG C-1000 DEG C, growing P-type AlGaN layer in described growth MQW Multiple Quantum Well, growth thickness 300 dust-500 dust;
(4) growing P-type GaP layer: the reacting gas in the reative cell of MOCVD growth furnace is become PH
3, the temperature adjusted in described reative cell is 700 DEG C-800 DEG C, passes into phosphine successively, described phosphine flow 30-60L/min, the time passing into phosphine is 30-120 second, then starts formal growing P-type GaP layer, pass into trimethyl gallium, the flow of described trimethyl gallium is 60-200sccm; PH
3flow be 30-100L/min; The flow of two luxuriant magnesium is 100-500sccm, until P type GaP layer growth terminates, the growth thickness of P type GaP layer is 100-500nm.
2. the growing method of a kind of white light LEDs according to claim 1, it is characterized in that, described in step (2), the thickness of GaN barrier layer is 100 dusts, and the thickness of described InGaN well layer is 30 dusts, and the described the superiors in described MQW Multiple Quantum Well grow the GaN barrier layer of a layer thickness 200 dust.
3. the white light LEDs utilizing the growing method of white light LEDs as claimed in claim 1 to prepare, it is characterized in that, described white light LEDs comprises Sapphire Substrate, and growth has GaN resilient coating, undoped GaN layer, N-type GaN layer, MQW Multiple Quantum Well, P type AlGaN layer and P type GaP layer successively on a sapphire substrate.
4. white light LEDs according to claim 3, is characterized in that, described N-type GaN layer is the GaN layer of doping Si, and the thickness of the GaN layer of described doping Si 2 μm-3 μm, the doping depth scope of described Si is: 1E18 to 5E19.
5. white light LEDs according to claim 3, is characterized in that, the thickness of described GaN resilient coating is 20nm-60nm; The thickness of described undoped GaN layer is 100nm-200nm.
6. white light LEDs according to claim 3, it is characterized in that, described MQW Multiple Quantum Well comprises GaN barrier layer and the InGaN well layer of alternating growth, the alternating growth cycle is 8-18, the thickness of described GaN barrier layer is 100 dusts, the thickness of described InGaN well layer is 30 dusts, grows the GaN barrier layer of a layer thickness 200 dust in the superiors of described MQW Multiple Quantum Well.
7. white light LEDs according to claim 3, is characterized in that, the thickness of described P type AlGaN layer is 300 dust-500 dusts.
8. white light LEDs according to claim 3, is characterized in that, the thickness of described P type GaP layer is 100-500nm.
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