KR101198759B1 - Nitride light emitting device - Google Patents
Nitride light emitting device Download PDFInfo
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- KR101198759B1 KR101198759B1 KR20070055360A KR20070055360A KR101198759B1 KR 101198759 B1 KR101198759 B1 KR 101198759B1 KR 20070055360 A KR20070055360 A KR 20070055360A KR 20070055360 A KR20070055360 A KR 20070055360A KR 101198759 B1 KR101198759 B1 KR 101198759B1
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Abstract
The present invention relates to a nitride-based light emitting device, and more particularly to a nitride-based light emitting device that can improve the luminous efficiency and reliability of the light emitting device. The present invention provides a nitride-based light emitting device comprising: a first quantum barrier layer; A stress relaxation layer positioned on the first quantum barrier layer; A second quantum barrier layer positioned on the stress relaxation layer; A quantum well layer positioned on the second quantum barrier layer; It is preferably configured to include at least one quantum well structure consisting of a first quantum barrier layer located on the quantum well layer.
Light emitting element, quantum well, stress, nitride, LED.
Description
1 is a cross-sectional view showing an example of a thin film structure of a light emitting element.
2 is a cross-sectional view showing another example of a thin film structure of a light emitting device.
3 is an energy band diagram of the thin film structure of FIG. 2.
4 is a cross-sectional view showing the thin film structure of the first embodiment of the present invention.
FIG. 5 is an energy band diagram of the thin film structure of FIG. 4.
6 is a cross-sectional view showing an example of the horizontal light emitting device according to the first embodiment.
7 is a cross-sectional view showing a thin film structure of a second embodiment of the present invention.
FIG. 8 is an energy band diagram of the thin film structure of FIG. 7.
9 is a cross-sectional view showing an example of the vertical light emitting device according to the second embodiment.
10 is a cross-sectional view showing a thin film structure according to a third embodiment of the present invention.
11 is a cross-sectional view showing a thin film structure according to a fourth embodiment of the present invention.
12 is a cross-sectional view showing a thin film structure according to a fifth embodiment of the present invention.
FIG. 13 is an energy band diagram of the thin film structure of FIG. 12.
<Brief description of the main parts of the drawing>
10: electron injection layer 20: quantum well structure
21: first quantum barrier layer 22: stress relaxation layer
23: second quantum barrier layer 24: quantum well layer
30
50: substrate
The present invention relates to a nitride-based light emitting device, and more particularly to a nitride-based light emitting device that can improve the luminous efficiency and reliability of the light emitting device.
Light Emitting Diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light.In 1962, red LEDs using GaAsP compound semiconductors were commercialized, along with GaP: N series green LEDs. It has been used as a light source for display images of electronic devices, including.
The wavelength of light emitted by such LEDs depends on the semiconductor material used to make the LEDs. This is because the wavelength of the emitted light depends on the band-gap of the semiconductor material, which represents the energy difference between the valence band electrons and the conduction band electrons.
Gallium nitride compound semiconductors (Gallium Nitride (GaN)) have high thermal stability and wide bandgap (0.8 to 6.2 eV), which has attracted much attention in the development of high-power electronic components including LEDs.
One reason for this is that GaN can be combined with other elements (indium (In), aluminum (Al), etc.) to produce semiconductor layers that emit green, blue and white light.
In this way, the emission wavelength can be adjusted to match the material's characteristics to specific device characteristics. For example, GaN can be used to create a white LED that can replace the blue LEDs and incandescent lamps that are beneficial for optical recording.
Due to the advantages of these GaN-based materials, the GaN-based LED market is growing rapidly. Therefore, since commercial introduction in 1994, GaN-based optoelectronic device technology has rapidly developed.
The brightness or output of the LED using the GaN-based material as described above is large, the structure of the active layer, the light extraction efficiency to extract light to the outside, the size of the LED chip, the type and angle of the mold (mold) when assembling the lamp package , Fluorescent material and the like.
On the other hand, one of the reasons why the growth of GaN-based semiconductors is more difficult than other III-V compound semiconductors is that there are no high-quality substrates, that is, wafers made of materials such as GaN, InN, and AlN.
Therefore, the LED structure is grown on a heterogeneous substrate such as sapphire, and many defects are generated, and these defects have a great influence on the LED performance.
In particular, the active layer for generating light in the LED structure has a nitride semiconductor multi-quantum well (MQW). In this multi-quantum well structure, the quantum well layer and the quantum barrier layer are repeatedly stacked, and electrons and holes injected from the n-type semiconductor layer and the p-type semiconductor layer, respectively, combine with each other in the quantum well layer to emit light. .
The quantum well layer and the quantum barrier layer constituting the quantum well structure have different material components, and stress may be applied to the quantum well layer due to the difference in the material components.
The stress acting on the quantum well layer deforms the energy band structure in the quantum well layer to greatly reduce the luminescence properties, and also lowers the interfacial characteristics between the quantum barrier layer and the quantum well layer. Can be lowered.
An object of the present invention is to provide a nitride-based light emitting device of high brightness by effectively solving the stress problem acting on the light emitting layer of the light emitting device.
In order to achieve the above technical problem, the present invention, the nitride-based light emitting device, the first quantum barrier layer; A stress relaxation layer positioned on the first quantum barrier layer; A second quantum barrier layer positioned on the stress relaxation layer; A quantum well layer positioned on the second quantum barrier layer; It is preferably configured to include at least one quantum well structure consisting of a first quantum barrier layer located on the quantum well layer.
The stress relaxation layer may have a plane lattice constant value between the first quantum barrier layer and the quantum well layer. The energy band gap of the stress relaxation layer may have an energy band gap between the first quantum barrier layer and the quantum well layer.
The stress relaxation layer may have a thickness of 1 to 15 nm, and when a plurality of quantum well structures are formed, at least one or more of the stress relaxation layers may include an n-type dopant.
On the other hand, the stress relaxation layer, the average composition may comprise an In component of 0.1 to 5%.
The energy band gap of the second quantum barrier layer may be greater than the energy band gap of the stress mitigating layer, and the thickness of the second quantum barrier layer may be thinner than the thickness of the first quantum barrier layer. In addition, the thickness of the second quantum barrier layer may be 0.2 to 5nm.
When the quantum well structure described above is a multiple quantum well structure composed of a plurality, at least one or more of the first quantum barrier layer and the quantum well layer may be formed including an n-type dopant.
Meanwhile, a second stress relaxation layer may be further included between the quantum well layer and the first quantum barrier layer, and the second stress relaxation layer may have a superlattice structure in which gallium nitride / indium gallium nitride is repeated.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.
Like reference numerals denote like elements throughout the description of the drawings. In the drawings the dimensions of layers and regions are exaggerated for clarity. In addition, each embodiment described herein includes an embodiment of a complementary conductivity type.
It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between . If a part of a component, such as a surface, is expressed as 'inner', it will be understood that this means that it is farther from the outside of the device than other parts of the element.
Furthermore, relative terms such as "beneath" or "overlies" refer to the relationship of one layer or region to one layer or region and another layer or region with respect to the substrate or reference layer, as shown in the figures. Can be used to describe.
It will be understood that these terms are intended to include other directions of the device in addition to the direction depicted in the figures. Finally, the term 'directly' means that there is no element in between. As used herein, the term 'and / or' includes any and all combinations of one or more of the recorded related items.
Although the terms first, second, etc. may be used to describe various elements, components, regions, layers, and / or regions, such elements, components, regions, layers, and / or regions It will be understood that it should not be limited by these terms.
These terms are only used to distinguish one element, component, region, layer or region from another region, layer or region. Thus, the first region, layer or region discussed below may be referred to as the second region, layer or region.
Embodiments of the present invention will be described with reference to a gallium nitride (GaN) based light emitting device formed on a nonconductive substrate such as, for example, a sapphire (Al 2 O 3 ) based substrate. However, the present invention is not limited to this structure.
1 illustrates a basic thin film structure of a high brightness nitride semiconductor light emitting device that is currently widely commercialized. The basic structure of the LED of the GaN-based material is a
In general, the
In this multi-quantum well structure, a quantum well layer 4 and a
In this case, the quantum well layer 4 is disposed between the two
Therefore, in order to implement a high-brightness light emitting device, electrons and holes should be transported well to the quantum well layer 4, and transported electrons and holes should be able to be efficiently combined in the quantum well layer 4.
As a result, thin film crystallinity of the quantum well layer 4 and the
Currently, the most representative multi-quantum well structure of a nitride semiconductor light emitting device is a gallium nitride (GaN) quantum barrier layer (5) having a relatively large band gap and an indium gallium nitride (InGaN) quantum well layer (4) having a relatively small band gap. Is done. At this time, gallium nitride and indium gallium nitride are prepared as a high quality thin film having excellent crystallinity in order to increase luminous efficiency.
By the way, gallium nitride and indium gallium nitride inherently have a very large crystal lattice mismatch. This is because the atomic radius of indium is larger than that of gallium, and the bonding force and bond length of indium and nitrogen are weaker and longer than the bonding force and bond length of gallium and nitrogen, respectively.
Therefore, the indium gallium nitride quantum well layer 4 is severely subjected to compressive stress. This compressive stress deforms the energy band structure in the quantum well layer 4 so that electrons and holes are spatially separated in the quantum well, and thus the luminous efficiency of the light emitting device may be reduced.
In addition, such compressive stress may lower the interface characteristics between the gallium nitride
In order to fundamentally overcome the above-mentioned problems to use a quantum well structure comprising a nitride stress relieving layer (In v Al w Ga 1 -v- w N, 0≤v, w≤1, 0≤v + w≤1) Can be.
That is, a structure capable of improving such a phenomenon is, as shown in FIG. 2, on the n-type
The p-type
The
In addition, as shown in FIG. 3, the
In some cases, the
On the other hand, the
In consideration of this quantum mechanical function, the thickness of the
In addition, the second
The second
Meanwhile, one or more of the stress relaxation layers 22 in the
As described above, the
That is, the
In addition, the interface characteristics between the quantum barrier layers 21 and 23 and the
As a result, it is possible to realize a high brightness high efficiency light emitting device by dramatically increasing the internal quantum efficiency, which is an essential optical characteristic of the light emitting device.
≪
In the first embodiment of the present invention shown in FIG. 4, metal organic chemical vapor deposition (MOCVD) was used for growing a nitride semiconductor thin film. Sapphire was used as the
Ammonia was used as the nitrogen source and hydrogen and nitrogen were used as the carrier gas. Gallium, indium and aluminum used an organometallic source. The n-type dopant was made of silicon (Si) and the p-type dopant was made of magnesium (Mg). An n-type gallium nitride (GaN) semiconductor
On it, a
On it, a gallium nitride second
Repeating the same sequence, all eight pairs of gallium nitride first
The p-type gallium nitride
Thereafter, as shown in FIG. 6, the p-type
≪
In the second embodiment, as shown in FIG. 7, the n-type nitride semiconductor
On it, a
An n-type dopant source was injected during growth of the
On it, a gallium nitride second
Repeating the same sequence, all eight pairs of gallium nitride first
The p-type gallium nitride
Subsequently, the process of manufacturing the side type or horizontal type light emitting device may be the same as in the first embodiment.
In some cases, the structure of the vertical light emitting device can be manufactured. That is, an ohmic electrode or a reflective
Thereafter, if the
Third Embodiment
As shown in FIG. 10, a 4 μm n-type nitride semiconductor
On it, a
On it, an indium gallium nitride stress relaxation layer having a thickness of 1 to 7 nm was grown. The indium source amount and the growth temperature were controlled so that the average indium composition of the indium gallium nitride stress relaxation layer was about 1 to 5%.
On it, a second quantum barrier layer of indium gallium nitride having a size of 0.2 to 3 nm was grown. The indium source amount was controlled so that the indium composition of the indium gallium nitride second quantum barrier layer was about 0.3%.
An indium gallium nitride quantum well layer having a thickness of 2 to 3 nm was grown thereon at a temperature of 700 ° C. The amount of indium source was controlled so that the indium composition of the indium gallium nitride quantum well layer was about 16 to 25%.
The light emitting layer having a multi-quantum well structure composed of eight pairs of indium gallium nitride first quantum barrier layer / indium gallium nitride stress relaxation layer / indium gallium nitride second quantum barrier layer / indium gallium nitride quantum well layer 220).
Of these, n-type dopant sources were injected into the initial two to six stress relaxation layers among the eight stress relaxation layers.
Among the first quantum barrier layers in the
Thereafter, as in the first embodiment, a horizontal light emitting device structure may be manufactured or a vertical light emitting device structure may be manufactured as in the second embodiment.
<Fourth Embodiment>
As shown in FIG. 11, a 4 μm n-type nitride semiconductor
On the
On it, a second quantum barrier layer of indium gallium nitride having a size of 1 nm was grown. A 3 nm thick indium gallium nitride quantum well layer was grown thereon at a temperature of 760 ° C. The indium composition of the quantum well layer was controlled to be about 16%.
The same procedure was repeated to form the
The first four quantum barrier layers among the first quantum barrier layers in the
The p-type gallium nitride
Thereafter, as in the first embodiment, a horizontal light emitting device structure may be manufactured or a vertical light emitting device structure may be manufactured as in the second embodiment.
<Fifth Embodiment>
As shown in FIG. 12, an n-type nitride semiconductor
A
The indium source amount and the growth temperature were controlled such that the average indium composition of the first
An indium gallium nitride
The second
The second stress relaxation layer may have a structure as follows. That is, a gallium nitride layer having a thickness of about 0.5 nm is grown at a temperature of 900 deg. C, and indium gallium nitride (about 0.2% of indium composition) having a thickness of about 0.5 nm is continuously grown thereon.
The gallium nitride may have a superlattice structure including 2 to 10 pairs of gallium nitride and indium gallium nitride having an indium composition of about 0.2%.
On the other hand, the amount of indium source was controlled so that the indium composition of the
Among the eight first stress relaxation layers 422, the first two first stress relaxation layers 422 were injected with an n-type dopant source. The first four quantum barrier layers 421 of the first
Among the quantum well layers 424 in the
The p-type gallium nitride
Thereafter, as in the first embodiment, a horizontal light emitting device structure may be manufactured or a vertical light emitting device structure may be manufactured as in the second embodiment.
The above embodiment is an example for explaining the technical idea of the present invention in detail, and the present invention is not limited to the above embodiment, various modifications are possible, and various embodiments of the technical idea are all protected by the present invention. It belongs to the scope.
The present invention as described above has the following effects.
First, the internal quantum efficiency of the light emitting device can be dramatically improved by significantly reducing the compressive stress inherently present in the light emitting layer and effectively constraining electrons and holes in the quantum well layer.
Second, as described above, the compressive stress of the light emitting layer can be effectively alleviated to make the stress distribution and the indium composition distribution in the quantum well layer more uniform, thereby further improving the optical characteristics.
Third, the interfacial characteristics between the quantum barrier layer and the quantum well layer are improved, thereby greatly reducing the carrier loss at the interface, thereby greatly improving the luminous efficiency.
Fourth, it is possible to implement a light emitting device having high brightness and high efficiency by dramatically increasing the internal quantum efficiency, which is an essential optical characteristic of the light emitting device.
Claims (15)
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KR20070055360A KR101198759B1 (en) | 2007-06-07 | 2007-06-07 | Nitride light emitting device |
EP07113150.2A EP1883121B1 (en) | 2006-07-26 | 2007-07-25 | Nitride-based semiconductor light emitting device |
US11/878,642 US7977665B2 (en) | 2006-07-26 | 2007-07-25 | Nitride-based light emitting device |
TW096127303A TWI451591B (en) | 2006-07-26 | 2007-07-26 | Nitride-based light emitting device |
US13/116,802 US8450719B2 (en) | 2006-07-26 | 2011-05-26 | Nitride-based light emitting device |
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KR20070055360A KR101198759B1 (en) | 2007-06-07 | 2007-06-07 | Nitride light emitting device |
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