JP2007088270A - Semiconductor light emitting element, lighting device using the same and manufacturing method of semiconductor light emitting element - Google Patents

Semiconductor light emitting element, lighting device using the same and manufacturing method of semiconductor light emitting element Download PDF

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JP2007088270A
JP2007088270A JP2005276201A JP2005276201A JP2007088270A JP 2007088270 A JP2007088270 A JP 2007088270A JP 2005276201 A JP2005276201 A JP 2005276201A JP 2005276201 A JP2005276201 A JP 2005276201A JP 2007088270 A JP2007088270 A JP 2007088270A
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Nobuyuki Takakura
信之 高倉
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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<P>PROBLEM TO BE SOLVED: To form a light emitting layer with a multiple quantum well of InGaN (well layer)/AlInGaN (barrier layer), in which a quantum well is deep and which can accumulate multiple electrons, and to install an electron stopper layer 15 corresponding to the well in a semiconductor light emitting element where an n-type nitride semiconductor layer, the light emitting layer (active layer) and a p-type nitride semiconductor layer are sequentially laminated on a substrate. <P>SOLUTION: Barrier layers 14d, 14e, 14f and 14g of the light emitting layer 14 are formed of an Al<SB>0.3</SB>In<SB>0.12</SB>Ga<SB>0.58</SB>N layer, well layers 14a, 14b and 14c are formed of a In<SB>0.15</SB>Ga<SB>0.85</SB>N layer, and an electron blocking layer 15 is formed of an Al<SB>0.4</SB>In<SB>0.1</SB>Ga<SB>0.5</SB>N layer. The electron block layer 15 can be formed at a temperature which is remarkably lower than a case when it is formed of AlGaN. A deposition temperature is brought close to the well layers 14a, 14b and 14c formed of InGaN, sufficient film quality can be obtained and emission efficiency can be improved much more. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体内で電子と正孔とを結合させて発光させる半導体発光素子、およびそれを用いる照明装置ならびにその半導体発光素子の製造方法に関する。   The present invention relates to a semiconductor light emitting element that emits light by combining electrons and holes in a semiconductor, an illumination device using the same, and a method for manufacturing the semiconductor light emitting element.

近年、III−Ｎ化合物（以下、ナイトライドと呼ぶ。）を用いて、その中に発光層（活性層）として多重量子井戸を形成し、外部から電流を流して、この多重量子井戸で電子と正孔とを結合させて発光させる半導体固体発光素子の発展が目覚しい。   In recent years, a III-N compound (hereinafter referred to as a nitride) is used to form a multiple quantum well as a light emitting layer (active layer) therein, and an electric current is passed from the outside. The development of semiconductor solid-state light emitting devices that emit light by combining holes is remarkable.

そのような半導体発光素子の代表例として、非特許文献１が挙げられる。その従来技術によれば、紫色から青色で発光する半導体発光素子において、前記発光層の構成を、井戸層をＩｎ０．１５Ｇａ０．８５Ｎ、障壁層をＡｌ０．０４Ｉｎ０．１５Ｇａ０．８１Ｎとして、深い量子井戸を形成するものの試作が報告されている。この文献による従来例を図３および図４に示す。図３はその従来技術による半導体発光素子の断面図であり、図４は半導体層におけるエネルギーバンド図である。図４では、簡単のために、バンドオフセットは省略してある。この従来技術では、すべての条件が記載されていないために、不明な箇所は推測することとする。 A typical example of such a semiconductor light emitting device is Non-Patent Document 1. According to the prior art, in the semiconductor light emitting device that emits light from purple to blue, the light emitting layer has a structure in which the well layer is In 0.15 Ga 0.85 N and the barrier layer is Al 0.04 In 0.15 Ga. A prototype of a deep quantum well is reported as 0.81 N. Conventional examples according to this document are shown in FIGS. FIG. 3 is a cross-sectional view of the conventional semiconductor light emitting device, and FIG. 4 is an energy band diagram in the semiconductor layer. In FIG. 4, the band offset is omitted for simplicity. In this prior art, since all conditions are not described, an unknown part is estimated.

ＭＯＣＶＤを用いて、サファイア基板１上にバッファ層２を形成し、その後、Ｓｉドープした厚み３μｍのｎ型ＧａＮ層３を形成し、その上に発光層４、エレクトロン・ブロッキング層５を形成し、その上にｐ型ＧａＮ層６を形成してエピタキシャル層を完成させている。その後は、公知となっている技術を用いて、ｐ型電極７およびｎ型電極８を形成して該半導体発光素子を完成する。ただし、この従来技術には、電極形成までは記載していないので、従来例の姿として妥当な形を推測により補っている。   Using MOCVD, the buffer layer 2 is formed on the sapphire substrate 1, then the Si-doped n-type GaN layer 3 having a thickness of 3 μm is formed, and the light emitting layer 4 and the electron blocking layer 5 are formed thereon, A p-type GaN layer 6 is formed thereon to complete the epitaxial layer. Thereafter, the p-type electrode 7 and the n-type electrode 8 are formed using a known technique to complete the semiconductor light emitting device. However, since this prior art does not describe the process up to electrode formation, a reasonable form as a figure of the conventional example is supplemented by estimation.

そして、この従来技術では、発光層４は、３つの井戸層４ａ，４ｂ，４ｃおよびそれを挟み込む障壁層４ｄ，４ｅ，４ｆ，４ｇから構成されており、上述のように、井戸層４ａ，４ｂ，４ｃはＩｎ０．１５Ｇａ０．８５Ｎ、障壁層４ｄ，４ｅ，４ｆ，４ｇはＡｌ０．０４Ｉｎ０．１５Ｇａ０．８１Ｎによって形成されている。また、発光層４からｐ型ＧａＮ層６への電子のリークを防ぐエレクトロン・ブロッキング層５は、ＡｌＧａＮから形成されている。 In this prior art, the light emitting layer 4 is composed of three well layers 4a, 4b, 4c and barrier layers 4d, 4e, 4f, 4g sandwiching the well layers. As described above, the well layers 4a, 4b 4c are formed of In 0.15 Ga 0.85 N, and the barrier layers 4d, 4e, 4f, and 4g are formed of Al 0.04 In 0.15 Ga 0.81 N. The electron blocking layer 5 that prevents leakage of electrons from the light emitting layer 4 to the p-type GaN layer 6 is made of AlGaN.

このように発光層４をＩｎＧａＮ／ＡｌＩｎＧａＮで形成することで、ＩｎＧａＮの井戸層４ａ，４ｂ，４ｃの室温でのバンドギャップは２．７〜３．０ｅＶ、ＡｌＩｎＧａＮの障壁層４ｄ，４ｅ，４ｆ，４ｇの室温でのバンドギャップは３．４〜３．５ｅＶと、従来のＩｎＧａＮ／ＧａＮの発光層よりも深い量子井戸を形成し（ＧａＮのバンドギャップは３．４ｅＶ）、電子を多く蓄積して発光量を向上させている。
M.Shatalov etal, Appl. Phys. Lett. 78, 817 (2001) Thus, by forming the light emitting layer 4 from InGaN / AlInGaN, the InGaN well layers 4a, 4b, 4c have a band gap of 2.7 to 3.0 eV at room temperature, and AlInGaN barrier layers 4d, 4e, 4f, The band gap of 4 g at room temperature is 3.4 to 3.5 eV, which forms a quantum well deeper than the conventional InGaN / GaN light emitting layer (GaN band gap is 3.4 eV), and accumulates many electrons. The amount of luminescence is improved.
M. Shatalov etal, Appl. Phys. Lett. 78, 817 (2001)

しかしながら、上述の従来技術では、電子移動度が大きいことに起因するｐ型ＧａＮ層６への電子のリークを防止するために設けるエレクトロン・ブロッキング層５として、ＡｌＩｎＧａＮの障壁層４ｄ，４ｅ，４ｆ，４ｇより大きなバンドギャップが必要であり、明確には言明されてはいないが、同文献では、ＡｌＧａＮを用いていると考えられる（ＡｌＧａＮのバンドギャップは３．８ｅＶ）。これは、同文献のｐ８１７の右下から１１行目に、”without top p-GaN and the AlGaN electron-blocking layers.”との技術があるからである。   However, in the above-described prior art, as the electron blocking layer 5 provided to prevent leakage of electrons to the p-type GaN layer 6 due to high electron mobility, AlInGaN barrier layers 4d, 4e, 4f, Although a band gap larger than 4 g is necessary and not clearly stated, it is considered that AlGaN is used in this document (the band gap of AlGaN is 3.8 eV). This is because there is a technique “without top p-GaN and the AlGaN electron-blocking layers” in the eleventh line from the lower right of p817 of the same document.

しかしながら、同文献のｐ８１７の左下から１２行目にあるように、ＡｌＧａＮはＩｎＧａＮを井戸層に用いる限り、ＩｎＧａＮの解離を防止するために、７５０〜８５０℃で形成しなければならず、これがヘテロ接合の品質を落とし、発光効率を劣化させるという問題がある。すなわち、ＡｌＩｎＧａＮに比べてＡｌが多いＡｌＧａＮでは、好ましい成膜温度が１０００℃以上と高く、それでＡｌＩｎＧａＮのバンドギャップ、たとえば前記３．５ｅＶに対して大きな、たとえば３．８ｅＶのバンドギャップを得ることができるのに対して、上記のように成膜温度を低下すると、バンドギャップは、たとえば３．６ｅＶ程度しか得ることができなくなってしまう。   However, as shown in the twelfth line from the lower left of p817 of the same document, AlGaN must be formed at 750 to 850 ° C. in order to prevent dissociation of InGaN as long as InGaN is used for the well layer. There is a problem that the quality of the junction is lowered and the luminous efficiency is deteriorated. That is, in AlGaN having a larger amount of Al than AlInGaN, a preferable film forming temperature is as high as 1000 ° C. or higher, and thus a band gap of AlInGaN, for example, a band gap of 3.8 eV, which is larger than 3.5 eV, can be obtained. On the other hand, if the film formation temperature is lowered as described above, the band gap can be obtained only about 3.6 eV, for example.

本発明の目的は、ＩｎＧａＮ／ＡｌＩｎＧａＮの利点を活かしながら、膜質の良いエレクトロン・ブロッキング層を有する半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法を提供することである。   An object of the present invention is to provide a semiconductor light emitting element having an electron blocking layer with good film quality, an illumination device using the semiconductor light emitting element, and a method for manufacturing the semiconductor light emitting element while taking advantage of InGaN / AlInGaN.

本発明の半導体発光素子は、基板上に少なくともｎ型窒化物半導体層、発光層およびｐ型窒化物半導体層を順次積層して成る半導体発光素子において、前記発光層とｐ型窒化物半導体層との間にエレクトロン・ブロッキング層を備え、多重量子井戸構造から成る前記発光層の井戸層がＩｎＧａＮ、障壁層および前記エレクトロン・ブロッキング層がＡｌＩｎＧａＮから成り、前記障壁層のバンドギャップはＧａＮのバンドギャップよりも大きく、かつ前記エレクトロン・ブロッキング層のバンドギャップは前記障壁層のバンドギャップよりも大きいことを特徴とする。   The semiconductor light-emitting device of the present invention is a semiconductor light-emitting device in which at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer are sequentially stacked on a substrate, wherein the light-emitting layer, the p-type nitride semiconductor layer, An electron blocking layer is provided, and the well layer of the light emitting layer having a multiple quantum well structure is made of InGaN, the barrier layer and the electron blocking layer are made of AlInGaN, and the band gap of the barrier layer is more than the band gap of GaN. And the band gap of the electron blocking layer is larger than the band gap of the barrier layer.

また、本発明の半導体発光素子の製造方法は、基板上に少なくともｎ型窒化物半導体層、発光層およびｐ型窒化物半導体層を順次積層して成る半導体発光素子の製造方法において、１０００±ｚ１℃で前記基板上にｎ型窒化物半導体層を形成する工程と、温度を低下し、８００±ｚ２℃で、多重量子井戸構造から成る前記発光層の障壁層をＡｌＩｎＧａＮで形成し、８００±ｚ３℃の温度で、井戸層をＩｎＧａＮで形成する工程を前記障壁層と井戸層との組数回繰返す工程と、前記８００±ｚ２℃の温度で、エレクトロン・ブロッキング層をＡｌＩｎＧａＮで形成する工程と、温度を上昇し、前記１０００±ｚ１℃で前記ｐ型窒化物半導体層を形成する工程とを含むことを特徴とする。   According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor light-emitting device, wherein the semiconductor light-emitting device is formed by sequentially stacking at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer on a substrate. A step of forming an n-type nitride semiconductor layer on the substrate at ℃, and the temperature is lowered, and at 800 ± z2 ℃, the barrier layer of the light emitting layer having a multiple quantum well structure is formed of AlInGaN, and 800 ± z3 A step of forming a well layer with InGaN at a temperature of ° C., a step of repeating the combination of the barrier layer and the well layer several times, a step of forming an electron blocking layer with AlInGaN at a temperature of 800 ± z 2 ° C., and And raising the temperature to form the p-type nitride semiconductor layer at 1000 ± z1 ° C.

上記の構成によれば、基板上に少なくともｎ型窒化物半導体層、発光層（活性層）およびｐ型窒化物半導体層を順次積層して成る半導体発光素子において、前記発光層とｐ型窒化物半導体層との間に、電子のｐ型窒化物半導体層への流入を阻止することで発光効率を高めるためのエレクトロン・ブロッキング層を設け、多重量子井戸構造（ＭＱＷ）から成る発光層の井戸層をＩｎｘ１Ｇａ（１−ｘ１）Ｎ（０＜ｘ１＜１）で形成し、発光層の障壁層をＡｌｙ２Ｉｎｘ２Ｇａ（１−ｘ２−ｙ２）Ｎ（０＜ｘ２＜１，０＜ｙ２＜１）の４元元素で形成し、同様に前記エレクトロン・ブロッキング層をＡｌｙ３Ｉｎｘ３Ｇａ（１−ｘ３−ｙ３）Ｎ（０＜ｘ３＜１，０＜ｙ３＜１）の４元元素で形成する。そして、前記障壁層のバンドギャップはＧａＮのバンドギャップよりも大きく、かつ前記エレクトロン・ブロッキング層のバンドギャップは前記障壁層のバンドギャップよりも大きい。 According to the above configuration, in the semiconductor light emitting device in which at least the n-type nitride semiconductor layer, the light emitting layer (active layer), and the p type nitride semiconductor layer are sequentially stacked on the substrate, the light emitting layer and the p type nitride are provided. An electron blocking layer is provided between the semiconductor layer and an electron blocking layer for preventing light from flowing into the p-type nitride semiconductor layer to increase light emission efficiency, and the well layer of the light emitting layer having a multiple quantum well structure (MQW) Are formed of In x1 Ga (1-x1) N (0 <x1 <1), and the barrier layer of the light emitting layer is Al y2 In x2 Ga (1-x2-y2) N (0 <x2 <1, 0 <y2 <1) and the electron blocking layer is formed of a quaternary element of Al y3 In x3 Ga (1-x3-y3) N (0 <x3 <1, 0 <y3 <1). Form. The band gap of the barrier layer is larger than the band gap of GaN, and the band gap of the electron blocking layer is larger than the band gap of the barrier layer.

そして、そのようなバンドギャップを実現するにあたって、ＡｌＩｎＧａＮのＡｌの量でバンドギャップを調整でき（Ａｌを多くすることでバンドギャップを大きくできる）、またＧａＮよりもＩｎＧａＮの方が低温でＡｌを加えることができる。   And in realizing such a band gap, the band gap can be adjusted by the amount of Al in AlInGaN (the band gap can be increased by increasing the amount of Al), and InGaN adds Al at a lower temperature than GaN. be able to.

したがって、エレクトロン・ブロッキング層は、ＡｌＧａＮに近い高さのバンドギャップを有し、発光層からｐ層への電子のリークを防止して注入効率を高めることができる。また、前記エレクトロン・ブロッキング層はＡｌＧａＮより格段に低温で形成することができ、ＩｎＧａＮから成る井戸層と成膜温度を近付け、界面や層内部に欠陥もしくは不純物準位の少ない膜質の良いエレクトロン・ブロッキング層を形成することができ、更なる発光効率の向上を実現することができる。すなわち、量子井戸が深く、多くの電子を蓄積できるというＩｎＧａＮ／ＡｌＩｎＧａＮ発光層（活性層）の利点を活かしながら、膜質の良いエレクトロン・ブロッキング層を提供して、発光効率の更なる向上を実現できる。   Therefore, the electron blocking layer has a band gap as high as AlGaN, and can prevent the leakage of electrons from the light emitting layer to the p layer, thereby increasing the injection efficiency. Further, the electron blocking layer can be formed at a temperature much lower than that of AlGaN, and the film forming temperature is brought close to the well layer made of InGaN, and the electron blocking layer having a good film quality with few defects or impurity levels at the interface or inside the layer. A layer can be formed, and further improvement in luminous efficiency can be realized. In other words, while taking advantage of the InGaN / AlInGaN light-emitting layer (active layer), which has a deep quantum well and can store many electrons, it provides an electron blocking layer with good film quality and can realize further improvement in light emission efficiency. .

さらにまた、本発明の半導体発光素子は、前記井戸層がＩｎｘ１Ｇａ（１−ｘ１）Ｎ（０＜ｘ１＜１）から成り、前記障壁層がＡｌｙ２Ｉｎｘ２Ｇａ（１−ｘ２−ｙ２）Ｎ（０＜ｘ２＜１，０＜ｙ２＜１）から成り、前記エレクトロン・ブロッキング層がＡｌｙ３Ｉｎｘ３Ｇａ（１−ｘ３−ｙ３）Ｎ（０＜ｘ３＜１，０＜ｙ３＜１）から成り、ｘ１＝０．１５、ｘ２＝０．１２、ｙ２＝０．３、ｘ３＝０．１、ｙ３＝０．４であることを特徴とする。 Furthermore, in the semiconductor light emitting device of the present invention, the well layer is made of In x1 Ga (1-x1) N (0 <x1 <1), and the barrier layer is Al y2 In x2 Ga (1-x2-y2). N (0 <x2 <1, 0 <y2 <1), and the electron blocking layer is made of Al y3 In x3 Ga (1-x3-y3) N (0 <x3 <1, 0 <y3 <1) X1 = 0.15, x2 = 0.12, y2 = 0.3, x3 = 0.1, y3 = 0.4.

上記の構成によれば、量子井戸を深くして大きな注入電流を得ることができ、かつエレクトロン・ブロッキング層のバンドギャップも大きくしてリーク電流を抑えることができるとともに、成膜温度を８００℃前後の比較的近い値に設定することができ、良好な膜質を得ることもできる。   According to the above configuration, the quantum well can be deepened to obtain a large injection current, and the band gap of the electron blocking layer can be increased to suppress the leakage current, and the film forming temperature is set to about 800 ° C. Can be set relatively close to each other, and good film quality can be obtained.

また、本発明の半導体発光素子は、前記発光層による中心発光波長が、３８０ｎｍ以上、４７０ｎｍ以下であることを特徴とする。   The semiconductor light emitting device of the present invention is characterized in that a central emission wavelength by the light emitting layer is 380 nm or more and 470 nm or less.

上記の構成によれば、上記の波長域はＩｎＧａＮ／ＡｌＩｎＧａＮの発光層（活性層）の発光効率が高い波長域であり、その波長域内で、所望とするバンドギャップを得ることができる組成とすることが望ましい。   According to said structure, said wavelength range is a wavelength range with high luminous efficiency of the light emitting layer (active layer) of InGaN / AlInGaN, and it is set as the composition which can obtain the desired band gap within the wavelength range. It is desirable.

さらにまた、本発明の照明装置は、前記の半導体発光素子を用いることを特徴とする。   Furthermore, the lighting device of the present invention is characterized by using the semiconductor light emitting element.

上記の構成によれば、照明装置では、蛍光体を調整することで所望の演色性を得ることができ、効率のよい励起光が要求されるので、上述のような発光効率の高い半導体発光素子を用いることは、特に照明装置に好適である。   According to the above configuration, the lighting device can obtain a desired color rendering property by adjusting the phosphor, and efficient excitation light is required. Therefore, the semiconductor light emitting device having high luminous efficiency as described above. It is particularly suitable for the lighting device.

本発明の半導体発光素子およびその製造方法は、以上のように、基板上に少なくともｎ型窒化物半導体層、発光層（活性層）およびｐ型窒化物半導体層を順次積層して成る半導体発光素子において、前記発光層とｐ型窒化物半導体層との間に、電子のｐ型窒化物半導体層への流入を阻止することで発光効率を高めるためのエレクトロン・ブロッキング層を設け、多重量子井戸構造（ＭＱＷ）から成る発光層の井戸層をＩｎＧａＮで形成し、発光層の障壁層をＡｌＩｎＧａＮの４元元素で形成し、同様に前記エレクトロン・ブロッキング層をＡｌＩｎＧａＮの４元元素で形成する。   As described above, the semiconductor light-emitting device and the method for manufacturing the same according to the present invention are obtained by sequentially laminating at least an n-type nitride semiconductor layer, a light-emitting layer (active layer), and a p-type nitride semiconductor layer on a substrate. An electron blocking layer is provided between the light emitting layer and the p-type nitride semiconductor layer to increase the light emission efficiency by preventing electrons from flowing into the p-type nitride semiconductor layer. The well layer of the light emitting layer made of (MQW) is formed of InGaN, the barrier layer of the light emitting layer is formed of a quaternary element of AlInGaN, and similarly the electron blocking layer is formed of a quaternary element of AlInGaN.

それゆえ、エレクトロン・ブロッキング層は、ＡｌＧａＮに近い高さのバンドギャップを有し、発光層からｐ層への電子のリークを防止して注入効率を高めることができる。また、前記エレクトロン・ブロッキング層はＡｌＧａＮより格段に低温で形成することができ、ＩｎＧａＮから成る井戸層と成膜温度を近付け、界面や層内部に欠陥もしくは不純物準位の少ない膜質の良いエレクトロン・ブロッキング層を形成することができ、更なる発光効率の向上を実現することができる。   Therefore, the electron blocking layer has a band gap with a height close to that of AlGaN, and can prevent the leakage of electrons from the light emitting layer to the p layer and increase the injection efficiency. Further, the electron blocking layer can be formed at a temperature much lower than that of AlGaN, and the film forming temperature is brought close to the well layer made of InGaN, and the electron blocking layer having a good film quality with few defects or impurity levels at the interface or inside the layer. A layer can be formed, and further improvement in luminous efficiency can be realized.

さらにまた、本発明の照明装置は、以上のように、前記の半導体発光素子を用いる。   Furthermore, the illumination device of the present invention uses the semiconductor light emitting element as described above.

それゆえ、効率のよい励起光が要求される照明装置に、上述の半導体発光素子を用いることは、特に好適である。   Therefore, it is particularly preferable to use the above-described semiconductor light-emitting element in an illumination device that requires efficient excitation light.

図１は、本発明の実施の一形態に係る半導体発光素子の断面図である。本発明の半導体発光素子の基本構造は、前述の図３で示す半導体発光素子と同様であり、以下にその構造を説明する。サファイア基板１１上には、バッファ層１２、ｎ型ＧａＮ層１３、発光層１４、エレクトロン・ブロッキング層１５およびｐ型ＧａＮ層１６が順に積層され、エピタキシャル層が完成される。その後、ｐ型電極１７およびｎ型電極１８が形成される。前記発光層１４は、３つの井戸層１４ａ，１４ｂ，１４ｃおよびそれを挟み込む障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇから構成されている。   FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention. The basic structure of the semiconductor light emitting device of the present invention is the same as that of the semiconductor light emitting device shown in FIG. 3, and the structure will be described below. On the sapphire substrate 11, a buffer layer 12, an n-type GaN layer 13, a light emitting layer 14, an electron blocking layer 15 and a p-type GaN layer 16 are sequentially laminated to complete an epitaxial layer. Thereafter, the p-type electrode 17 and the n-type electrode 18 are formed. The light emitting layer 14 includes three well layers 14a, 14b, and 14c and barrier layers 14d, 14e, 14f, and 14g sandwiching the well layers.

注目すべきは、本発明では、前記エレクトロン・ブロッキング層１５の組成が図３で示す半導体発光素子と異なり、その成膜温度も異なることである。具体的には、井戸層１４ａ，１４ｂ，１４ｃはＩｎＧａＮから成り、障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇはＡｌＩｎＧａＮから成り、エレクトロン・ブロッキング層１５が、障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇと同様のＡｌＩｎＧａＮから成ることである。たとえば、前記井戸層１４ａ，１４ｂ，１４ｃはＩｎ０．１５Ｇａ０．８５Ｎから成り、障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇはＡｌ０．３Ｉｎ０．１２Ｇａ０．５８Ｎから成り、エレクトロン・ブロッキング層１５はＡｌ０．４Ｉｎ０．１Ｇａ０．５Ｎから成る。これは、障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇとエレクトロン・ブロッキング層１５とにおいて、所望のバンドギャップを実現するにあたって、それらをＡｌＩｎＧａＮで作成すると、Ａｌの量でバンドギャップを調整でき（Ａｌを多くすることでバンドギャップを大きくできる）、またＧａＮよりもＩｎＧａＮの方が低温でＡｌを加えることができるためである。 It should be noted that in the present invention, the composition of the electron blocking layer 15 is different from that of the semiconductor light emitting device shown in FIG. Specifically, the well layers 14a, 14b, and 14c are made of InGaN, the barrier layers 14d, 14e, 14f, and 14g are made of AlInGaN, and the electron blocking layer 15 is the same as the barrier layers 14d, 14e, 14f, and 14g. It consists of AlInGaN. For example, the well layers 14a, 14b, and 14c are made of In 0.15 Ga 0.85 N, and the barrier layers 14d, 14e, 14f, and 14g are made of Al 0.3 In 0.12 Ga 0.58 N, and electrons The blocking layer 15 is made of Al 0.4 In 0.1 Ga 0.5 N. In the barrier layers 14d, 14e, 14f, and 14g and the electron blocking layer 15, when the desired band gap is realized, if they are made of AlInGaN, the band gap can be adjusted by the amount of Al (a large amount of Al By doing so, the band gap can be increased), and InGaN can add Al at a lower temperature than GaN.

以下に、上述のように構成される半導体発光素子の結晶成長方法を説明する。成長に用いるガスは、キャリアガスとして、水素ガス（Ｈ２）、窒素ガス（Ｎ２）、成長に係わるガスとして、アンモニア（ＮＨ３）、トリメチルガリウム（Ｇａ（ＣＨ３）３）、トリメチルアルミニウム（Ａｌ（ＣＨ３）３）、トリメチルインジウム、（Ｉｎ（ＣＨ３）３）、シラン（ＳｉＨ４）、シクロペンタジエニルマグネシウム（Ｍｇ（Ｃ５Ｈ５）２）である。 Below, the crystal growth method of the semiconductor light-emitting device comprised as mentioned above is demonstrated. The gases used for the growth are hydrogen gas (H 2 ), nitrogen gas (N 2 ) as carrier gases, and ammonia (NH 3 ), trimethyl gallium (Ga (CH 3 ) 3 ), and trimethyl aluminum (G) as growth gases. Al (CH 3 ) 3 ), trimethylindium, (In (CH 3 ) 3 ), silane (SiH 4 ), and cyclopentadienyl magnesium (Mg (C 5 H 5 ) 2 ).

先ず、サファイア基板１１を有機および酸溶液にて洗浄を行う。そして、ＭＯＣＶＤ装置を用いて、７６Ｔｏｒｒの減圧雰囲気下で、５５０℃で３０ｎｍのＧａＮバッファ層１２を形成し、その後、１０００±ｚ１℃、たとえばｚ１＝＋２０の１０２０℃に昇温して、Ｓｉをドープしながらｎ型ＧａＮ層１３を３μｍ堆積する。これらの技術はすでに周知の事柄であり、詳細は省略する。   First, the sapphire substrate 11 is cleaned with an organic and acid solution. Then, using a MOCVD apparatus, a GaN buffer layer 12 having a thickness of 30 nm is formed at 550 ° C. in a reduced pressure atmosphere of 76 Torr. Thereafter, the temperature is increased to 1000 ± z1 ° C., for example, 1020 ° C. of z1 = + 20. While doping, an n-type GaN layer 13 is deposited by 3 μm. These techniques are already well known and will not be described in detail.

その後、温度を８００±ｚ２℃、たとえばｚ２＝＋４０の８４０℃に降温し、材料ガスとして、アンモニア、トリメチルガリウム、トリメチルインジウムおよびトリメチルアルミニウムを、それぞれインジウムの組成比が１２％、アルミニウムの組成比が３０％、ガリウムの組成比が５８％になるように流量比を選んで流し、発光層１４内の１番目の障壁層１４ｄとなる前記Ａｌ０．３Ｉｎ０．１２Ｇａ０．５８Ｎ層を厚さ約５ｎｍ形成する。続いて、温度を８００±ｚ３℃、たとえばｚ３＝−５０の７５０℃に降温し、障壁層形成の場合と同様に、それぞれのガス流量比を選んで、インジウムの組成比が１５％、ガリウムの組成比が８５％になる条件で、発光層１４内の１番目の井戸層１４ａとなる前記Ｉｎ０．１５Ｇａ０．８５Ｎ層を厚さ約３ｎｍ形成する。以下同様に、２番目の障壁層１４ｅおよび井戸層１４ｂ、３番目の障壁層１４ｆおよび井戸層１４ｃ、ならびに４番目の障壁層１４ｇを形成する。 Thereafter, the temperature is lowered to 800 ± z2 ° C., for example, 840 ° C. where z2 = + 40, and ammonia, trimethylgallium, trimethylindium, and trimethylaluminum are used as material gases, respectively, with an indium composition ratio of 12% and an aluminum composition ratio of The Al 0.3 In 0.12 Ga 0.58 N layer serving as the first barrier layer 14d in the light emitting layer 14 is flowed by selecting a flow ratio so that the composition ratio of gallium is 30% and 58%. A thickness of about 5 nm is formed. Subsequently, the temperature is lowered to 800 ± z3 ° C., for example, 750 ° C. where z3 = −50, and in the same manner as in the barrier layer formation, each gas flow rate ratio is selected, the composition ratio of indium is 15%, Under the condition that the composition ratio is 85%, the In 0.15 Ga 0.85 N layer to be the first well layer 14a in the light emitting layer 14 is formed to a thickness of about 3 nm. Similarly, the second barrier layer 14e and the well layer 14b, the third barrier layer 14f and the well layer 14c, and the fourth barrier layer 14g are formed.

この後に、障壁層１４ｇの温度８００±ｚ２℃の８４０℃に保ったまま、アンモニア、トリメチルガリウム、トリメチルインジウムおよびトリメチルアルミニウムのそれぞれのガス流量比を変えて、インジウムの組成比が１０％、アルミニウムの組成比が４０％、ガリウムの組成比が５０％になるようにし、前記エレクトロン・ブロッキング層１５となる前記Ａｌ０．４Ｉｎ０．１Ｇａ０．５Ｎ層を厚さ約２０ｎｍ形成する。 Thereafter, the gas flow ratio of ammonia, trimethylgallium, trimethylindium and trimethylaluminum is changed while maintaining the temperature of the barrier layer 14g at 840 ° C., which is 800 ± z 2 ° C., and the composition ratio of indium is 10%. The Al 0.4 In 0.1 Ga 0.5 N layer to be the electron blocking layer 15 is formed to a thickness of about 20 nm so that the composition ratio is 40% and the gallium composition ratio is 50%.

その後は、前記１０００±ｚ１℃の１０２０℃に昇温して、Ｍｇをドープしながら、ｐ型ＧａＮ層１６を形成してエピウェハの作成を終了し、ｐ型電極１７およびｎ型電極１８を形成するのであるが、これも従来から周知の手法であるので、詳細は省略する。こうして、本発明の半導体発光素子が完成する。   Thereafter, the temperature is raised to 1020 ° C., which is 1000 ± z1 ° C., the p-type GaN layer 16 is formed while doping Mg, and the creation of the epi-wafer is completed, and the p-type electrode 17 and the n-type electrode 18 are formed. However, since this is also a conventionally well-known method, details are omitted. Thus, the semiconductor light emitting device of the present invention is completed.

図２は、上述のように作成された本発明の半導体発光素子の半導体層におけるエネルギーバンド図である。簡単のため、バンドオフセットは省略している。ｎ型ＧａＮ層１３およびｐ型ＧａＮ層１６のバンドギャップは、室温で３．４ｅＶである。前記発光層１４の内、障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇは前記Ａｌ０．３Ｉｎ０．１２Ｇａ０．５８Ｎ層から成り、バンドギャップは室温で３．５ｅＶと、ＧａＮ層１３，１６より高い障壁を実現しており、したがって量子井戸の深さは従来例のＩｎＧａＮ／ＧａＮよりも深く、キャリアの蓄積量も多くできる。 FIG. 2 is an energy band diagram in the semiconductor layer of the semiconductor light emitting device of the present invention prepared as described above. For simplicity, the band offset is omitted. The band gaps of the n-type GaN layer 13 and the p-type GaN layer 16 are 3.4 eV at room temperature. Among the light emitting layers 14, the barrier layers 14d, 14e, 14f, and 14g are composed of the Al 0.3 In 0.12 Ga 0.58 N layer, and the band gap is 3.5 eV at room temperature. Therefore, the quantum well is deeper than the conventional InGaN / GaN and the amount of accumulated carriers can be increased.

一方、井戸層１４ａ，１４ｂ，１４ｃは前記Ｉｎ０．１５Ｇａ０．８５Ｎ層から成り、室温でのバンドギャップは３．０ｅＶで、該井戸層１４ａ，１４ｂ，１４ｃで発光再結合により発光される光の波長は、４１０ｎｍの紫色である。エレクトロン・ブロッキング層１５は、前記Ａｌ０．４Ｉｎ０．１Ｇａ０．５Ｎ層から成り、室温でのバンドギャップは３．８ｅＶと障壁層１４ｄ，１４ｅ，１４ｆ，１４ｇよりも高く、電子のｐ型ＧａＮ層１６へのリークを止めるには充分な高さである。 On the other hand, the well layers 14a, 14b, and 14c are composed of the In 0.15 Ga 0.85 N layer, and the band gap at room temperature is 3.0 eV. The well layers 14a, 14b, and 14c emit light by light emission recombination. The wavelength of light is 410 nm purple. The electron blocking layer 15 is made of the Al 0.4 In 0.1 Ga 0.5 N layer, and has a band gap at room temperature of 3.8 eV, which is higher than the barrier layers 14d, 14e, 14f, and 14g. The height is high enough to stop leakage to the p-type GaN layer 16.

ここで、従来例のＡｌＧａＮで同様な高さのバンドギャップを有するエレクトロン・ブロッキング層５を形成するためには、Ａｌ組成１４％、Ｇａ組成８６％のＡｌ０．１４Ｇａ０８６Ｎを１１００℃で堆積する必要があり、発光層４の解離を防ぐためには、前述したように、この最適なＡｌ０．１４Ｇａ０８６Ｎ形成条件よりかなり低温で形成しなければならない。（７５０〜８５０℃）。 Here, in order to form the electron blocking layer 5 having the same band gap with AlGaN of the conventional example, Al 0.14 Ga 086 N having an Al composition of 14% and a Ga composition of 86% is formed at 1100 ° C. In order to prevent dissociation of the light emitting layer 4, it must be formed at a temperature considerably lower than the optimum Al 0.14 Ga 086 N forming condition as described above. (750-850 degreeC).

したがって、本発明のエレクトロン・ブロッキング層１５は、格段に低温で形成でき、発光層１４の膜質も該エレクトロン・ブロッキング層１５の膜質も共に高品質に保ちながら、素子の形成が可能なことが理解される。このようにして、量子井戸が深く、多くの電子を蓄積できるというＩｎＧａＮ／ＡｌＩｎＧａＮの発光層１４の利点を活かしながら、膜質の良いエレクトロン・ブロッキング層１５を提供して、発光効率の更なる向上を実現できる。   Therefore, it is understood that the electron blocking layer 15 of the present invention can be formed at a remarkably low temperature, and the device can be formed while maintaining both the film quality of the light emitting layer 14 and the film quality of the electron blocking layer 15 at a high quality. Is done. In this way, the electron blocking layer 15 with good film quality is provided and the luminous efficiency is further improved while taking advantage of the light emitting layer 14 of InGaN / AlInGaN that has a deep quantum well and can accumulate many electrons. realizable.

また、ＡｌとＩｎとの２つのパラメータｘ，ｙを調整することで、前記発光層１４の中心発光波長およびバンドギャップを容易に変化させることができ、前記中心発光波長を３８０ｎｍ以上、４７０ｎｍ以下とすることで、ＩｎＧａＮ／ＡｌＩｎＧａＮから成る発光層１４の発光効率を高くすることができる。   Further, by adjusting the two parameters x and y of Al and In, the center emission wavelength and the band gap of the light emitting layer 14 can be easily changed, and the center emission wavelength is set to 380 nm or more and 470 nm or less. As a result, the light emission efficiency of the light emitting layer 14 made of InGaN / AlInGaN can be increased.

さらにまた、半導体発光素子を用いる照明装置では、蛍光体を調整することで所望の演色性を得ることができ、効率のよい励起光が要求されるので、上述のような発光効率の高い半導体発光素子を用いることは、特に照明装置に好適である。   Furthermore, in a lighting device using a semiconductor light emitting element, a desired color rendering property can be obtained by adjusting a phosphor, and efficient excitation light is required. The use of the element is particularly suitable for a lighting device.

本発明の実施の一形態に係る半導体発光素子の断面図である。1 is a cross-sectional view of a semiconductor light emitting element according to an embodiment of the present invention. 本発明の半導体発光素子によるエネルギーバンド図である。It is an energy band figure by the semiconductor light-emitting device of this invention. 従来技術の半導体発光素子の断面図である。It is sectional drawing of the semiconductor light-emitting device of a prior art. 従来技術の半導体発光素子によるエネルギーバンド図である。It is an energy band figure by the semiconductor light emitting element of a prior art.

符号の説明Explanation of symbols

１１ サファイア基板
１２ バッファ層
１３ ｎ型ＧａＮ層
１４ 発光層
１４ａ，１４ｂ，１４ｃ 井戸層
１４ｄ，１４ｅ，１４ｆ，１４ｇ 障壁層
１５ エレクトロン・ブロッキング層
１６ ｐ型ＧａＮ層
１７ ｐ型電極
１８ ｎ型電極 11 Sapphire substrate 12 Buffer layer 13 n-type GaN layer 14 Light-emitting layers 14a, 14b, 14c Well layers 14d, 14e, 14f, 14g Barrier layer 15 Electron blocking layer 16 p-type GaN layer 17 p-type electrode 18 n-type electrode

Claims (5)

基板上に少なくともｎ型窒化物半導体層、発光層およびｐ型窒化物半導体層を順次積層して成る半導体発光素子において、
前記発光層とｐ型窒化物半導体層との間にエレクトロン・ブロッキング層を備え、
多重量子井戸構造から成る前記発光層の井戸層がＩｎＧａＮ、障壁層および前記エレクトロン・ブロッキング層がＡｌＩｎＧａＮから成り、前記障壁層のバンドギャップはＧａＮのバンドギャップよりも大きく、かつ前記エレクトロン・ブロッキング層のバンドギャップは前記障壁層のバンドギャップよりも大きいことを特徴とする半導体発光素子。 In a semiconductor light-emitting device comprising at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer sequentially stacked on a substrate,
An electron blocking layer is provided between the light emitting layer and the p-type nitride semiconductor layer,
The well layer of the light emitting layer having a multiple quantum well structure is made of InGaN, the barrier layer and the electron blocking layer are made of AlInGaN, the band gap of the barrier layer is larger than the band gap of GaN, and the electron blocking layer A semiconductor light emitting device, wherein a band gap is larger than a band gap of the barrier layer. 前記井戸層がＩｎｘ１Ｇａ（１−ｘ１）Ｎ（０＜ｘ１＜１）から成り、前記障壁層がＡｌｙ２Ｉｎｘ２Ｇａ（１−ｘ２−ｙ２）Ｎ（０＜ｘ２＜１，０＜ｙ２＜１）から成り、前記エレクトロン・ブロッキング層がＡｌｙ３Ｉｎｘ３Ｇａ（１−ｘ３−ｙ３）Ｎ（０＜ｘ３＜１，０＜ｙ３＜１）から成り、ｘ１＝０．１５、ｘ２＝０．１２、ｙ２＝０．３、ｘ３＝０．１、ｙ３＝０．４であることを特徴とする請求項１記載の半導体発光素子。 The well layer is made of In x1 Ga (1-x1) N (0 <x1 <1), and the barrier layer is Al y2 In x2 Ga (1-x2-y2) N (0 <x2 <1, 0 <y2). <1), and the electron blocking layer is made of Al y3 In x3 Ga (1-x3-y3) N (0 <x3 <1, 0 <y3 <1), x1 = 0.15, x2 = 0 12. The semiconductor light emitting device according to claim 1, wherein y2 = 0.3, x3 = 0.1, and y3 = 0.4. 前記発光層による中心発光波長が、３８０ｎｍ以上、４７０ｎｍ以下であることを特徴とする請求項１記載の半導体発光素子。   2. The semiconductor light emitting element according to claim 1, wherein a central emission wavelength by the light emitting layer is 380 nm or more and 470 nm or less. 前記請求項２または３記載の半導体発光素子を用いることを特徴とする照明装置。   An illumination device using the semiconductor light emitting element according to claim 2. 基板上に少なくともｎ型窒化物半導体層、発光層およびｐ型窒化物半導体層を順次積層して成る半導体発光素子の製造方法において、
１０００±ｚ１℃で前記基板上にｎ型窒化物半導体層を形成する工程と、
温度を低下し、８００±ｚ２℃で、多重量子井戸構造から成る前記発光層の障壁層をＡｌＩｎＧａＮで形成し、８００±ｚ３℃の温度で、井戸層をＩｎＧａＮで形成する工程を前記障壁層と井戸層との組数回繰返す工程と、
前記８００±ｚ２℃の温度で、エレクトロン・ブロッキング層をＡｌＩｎＧａＮで形成する工程と、
温度を上昇し、前記１０００±ｚ１℃で前記ｐ型窒化物半導体層を形成する工程とを含むことを特徴とする半導体発光素子の製造方法。 In a method for manufacturing a semiconductor light-emitting element, in which at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer are sequentially stacked on a substrate.
Forming an n-type nitride semiconductor layer on the substrate at 1000 ± z1 ° C .;
The step of forming the barrier layer of the light emitting layer having a multiple quantum well structure with AlInGaN at a temperature of 800 ± z 2 ° C. at a temperature of 800 ± z 2 ° C. and forming the well layer with InGaN at a temperature of 800 ± z 3 ° C. A step of repeating the set with the well layer several times;
Forming an electron blocking layer of AlInGaN at a temperature of 800 ± z2 ° C .;
And raising the temperature to form the p-type nitride semiconductor layer at 1000 ± z1 ° C.
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