CN110429159A - The unstressed configuration powder Single chip white light LED component and manufacturing method of adjustable color - Google Patents
The unstressed configuration powder Single chip white light LED component and manufacturing method of adjustable color Download PDFInfo
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- CN110429159A CN110429159A CN201910611191.8A CN201910611191A CN110429159A CN 110429159 A CN110429159 A CN 110429159A CN 201910611191 A CN201910611191 A CN 201910611191A CN 110429159 A CN110429159 A CN 110429159A
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- 239000000843 powder Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000005036 potential barrier Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000005215 recombination Methods 0.000 claims abstract description 7
- 230000006798 recombination Effects 0.000 claims abstract description 6
- 238000001228 spectrum Methods 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 229910052582 BN Inorganic materials 0.000 claims description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 11
- 239000002070 nanowire Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000004020 luminiscence type Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002042 Silver nanowire Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 230000001052 transient effect Effects 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000002041 carbon nanotube Substances 0.000 claims 1
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract description 7
- 239000007772 electrode material Substances 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 86
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxo nitrogen Chemical compound 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of unstressed configuration powder Single chip white light LED components of adjustable color, realize the unstressed configuration powder Single chip white light LED component and its manufacturing method of adjustable color.The LED component is the LED component of Schottky barrier, and transparent electrode material is as metal layer, and ultra-thin medium material is as potential barrier insulating layer, and n or p-type GaN are as active layer.By adjusting transparent metal layer work function, so that carrier can obtain that a kind of structure is simple with this with tunnelling to active layer and different energy level Carrier recombinations sending wide-spectrum white-light, the white light LED part of the high single-chip unstressed configuration powder of adjustable color, colour rendering.It has many advantages, such as that small in size, the service life is long, stability is good, luminous efficiency is high, colour rendering is high, fast response time, will become following hot operation, high stability, the important devices structure of high performance extremely succinct Single chip white light LED.
Description
Technical field
The present invention relates to semiconductor photoelectric device and its manufacturing fields, in particular to the unstressed configuration powder single-chip of adjustable color
White light LED part and its manufacturing method.
Background technique
The next-generation general illumination light source of white light LEDs conduct, energy conservation and environmental protection, service life are reliable.Meanwhile the white light of room lighting
LED light source, as communication base station carry out signal modulation, transmission, carry out visible light communication (LiFi), can with it is currently a popular
WiFi communication complements each other, great market potential.
Currently, technically, there are mainly three types of the methods for realizing LED white light emission: first is that more using RGB three primary colours
Chip portfolio shines, and is mixed to form white light, and the white light LEDs of this method preparation have the advantages that luminous efficiency is high, colour rendering is good,
Deficiency is that three primary colours chip independently shines, and optical attenuation is different, and it is unstable to easily lead to light emission color temperature, in addition, each luminescence chip
Required driving voltage is different, and control circuit is complex, higher cost, it is difficult to extensive commercial；Second is that Schlotter et al. is mentioned
Use LED blue light source out excites yellow fluorescent powder, and two kinds of wavelength, which shine, is mixed to form white light, is chiefly used in clearing lamp,
It can not really be used to illuminate.Third is that Kafmann et al. proposition uses LED ultraviolet excitation three primary colors fluorescent powder, it is mixed to form
White light, this method is simple, white light colour rendering is good, and deficiency is that LED chip luminous efficiency is low, ultraviolet light easily leaks, white light
Colour temperature is higher, the service life is shorter, while there are low-responses and temperature instability for fluorescent powder.
Summary of the invention
In view of this, present invention seek to address that the above problem, a kind of adjustable color, unstressed configuration powder, Single chip white light are provided
LED component.It has many advantages, such as that small in size, the service life is long, stability is good, luminous efficiency is high, colour rendering is high, fast response time, will
As the following hot operation, high stability, the important devices structure of high performance extremely succinct Single chip white light LED.
To achieve the above object, the present invention has following technical solution:
Compared to the prior art, technical solution of the present invention have it is following the utility model has the advantages that
The embodiment of the invention provides a kind of extremely simple double-deck semiconductor structures, realize the unstressed configuration powder single of adjustable color
Piece white light LED part and its manufacturing method.The LED component is the LED component of Schottky barrier, and transparent electrode material is as transparent
Metal layer, ultra-thin medium material is as potential barrier insulating layer, and n or p-type GaN are as active layer.By adjusting transparent metal layer work content
Number, so that carrier can be white with tunnelling to active layer and different impurities energy level Carrier recombination sending wide range (400~900nm)
Light, can obtain that a kind of structure is simple with this, the white light LED part of the high single-chip unstressed configuration powder of adjustable color, colour rendering.Its
Have many advantages, such as that small in size, the service life is long, stability is good, luminous efficiency is high, colour rendering is high, fast response time, will become following high
Warm work, high stability, the important devices structure of high performance extremely succinct Single chip white light LED.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 shows the structural schematic diagram of Single chip white light LED according to an embodiment of the present invention；
Fig. 2 shows shone using the SEM of Single chip white light LED in the manufacturing process of the manufacturing method of the embodiment of the present invention
Piece, wherein (a)-(c) be respectively the surface p-type GaN, hexagonal boron nitride is transferred to the surface p-type GaN, Cu nano wire is transferred to this
Levy the SEM photograph after hexagonal boron nitride.
Fig. 3 shows the I-V test curve of Single chip white light LED according to an embodiment of the invention；
Fig. 4 shows the electroluminescent spectrum of Single chip white light LED according to an embodiment of the present invention；
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.
Refering to what is shown in Fig. 1, the embodiment of the invention provides a kind of Single chip white light LED, comprising:
Substrate 100；
Low temperature GaN buffer 110 on substrate 100, the high temperature GaN buffer layer 120 on low temperature GaN buffer 110 are described
GaN buffer layer is intrinsic semiconductor, and purpose is the stress for discharging GaN active layer 130 and growing on substrate 100, and improving GaN has
The crystal quality of active layer 130, the GaN active layer 130 are the N-shaped or p-type semiconductor of doping；
Potential barrier insulating layer 140 on the GaN active layer 130, the potential barrier insulating layer 140 are ultra-thin medium material；
Transparent metal layer 150 on the potential barrier insulating layer 140, the transparent metal layer 150 allow the active layer 130
The light of generation penetrates；
The first electrode 160 being electrically connected with the active layer 130, and be electrically connected with the transparent metal layer 150
Two electrodes 162.
In embodiments of the present invention, single-chip unstressed configuration pink colour temperature adjustable white light LED component is the LED device of Schottky barrier
Part, using ultra-thin medium material as potential barrier insulating layer 140, p-type GaN is as active layer 130, and transparent electrode material is as transparent gold
Belong to layer 150, in this way, by adjusting transparent metal layer work function, so that carrier can be carried with tunnelling to active layer from different energy levels
The compound sending white light of stream, a kind of structure can be obtained with this simple, adjustable color, the white light LEDs device of single-chip unstressed configuration powder
Part has many advantages, such as that small in size, the service life is long, stability is good, luminous efficiency is high.
In some embodiments, substrate 100 can be Sapphire Substrate, can also be silicon substrate, silicon carbide substrates, oxidation
One of zinc substrate.In embodiments of the present invention, substrate selects sapphire.
In the present embodiment, low temperature GaN buffer 110, high temperature GaN buffer layer be formed in substrate 100 and active layer 130 it
Between.
In the present embodiment, active layer 130 be formed in ground high temperature GaN buffer layer 110,120 and potential barrier insulating layer 140 it
Between, active layer is the N-shaped or p-type GaN of doping.
Potential barrier insulating layer 140 is formed between transparent metal layer 150 and active layer 130, is played and is provided crucial insulation gesture
The effect at base, in the embodiment of the present invention, potential barrier insulating layer is ultra-thin medium material, can for two-dimentional hexagonal boron nitride (h-BN),
Two-dimentional transient metal sulfide (TMD), SiO2、Al2O3, one of AlN or a variety of form potential barrier insulating layer.In the present invention
In embodiment, two-dimentional h-BN is potential barrier insulating layer material, and it is biggish that suitable potential barrier thickness of insulating layer can be such that LED component has
Operating current, lesser leakage current.
Active layer 130 is the luminescent layer of recombination luminescence after carrier transition, plays the role of luminescent layer, which is to determine hair
The active layer of optical wavelength.In the embodiment of the present invention, active layer is the N-shaped GaN for adulterating Si, or adulterates the p-type GaN of Mg.
Transparent metal layer 150 is formed on potential barrier insulating layer 140, plays the role of electrical pumping, as needed, Ke Yixuan
Select single layer or laminated construction, indium-doped tin oxide (ITO), silver nanowires, copper nano-wire, alloy nano-wire or graphene, carbon nanometer
One of pipe etc. is a variety of.Different transparent metal layer work functions is different, and under certain bias, different-energy is carried in metal layer
It flows sub- tunnelling different impurities energy level Carrier recombination into active layer, with active layer and issues wide-spectrum white-light.More preferably, transparent metal
Layer can be the metal nanometer line of package Pt (platinum), adjust metal nanometer line work function, adjust white light LEDs light emission color temperature with this.
In embodiments of the present invention, the first electrode 160 connecting with active layer 130 can be low-resistance Ohmic electrode,
For the material to be matched using the work function with active layer 130 as electrode, the material of electrode can be metal, alloy or other height
Conductive material, to guarantee more efficient electrical pumping.
In a preferred embodiment of the invention, substrate 100 uses sapphire, and active layer 130 is using the p-type for mixing Mg
GaN material, potential barrier insulating layer 140 use the Cu of different work functions using the intrinsic hexagonal boron nitride of two dimension, transparent metal layer 150
Alloy nano-wire, first electrode 160 use Ni-Au alloy, and second electrode 162 uses Ag glue.In the preferred embodiment, LED
The cut-in voltage of device is at 3V or so (Fig. 3), carrier recombination luminescence at p-type GaN, emission wavelength be located at 450nm,
550nm and 700nm or so, shown in Fig. 4.Further, in the embodiment can use pure Cu metal nanometer line, wrap up in Pt (platinum),
Ni (nickel), Al (aluminium), Ga (gallium), graphite dilute metal nanometer line and ITO adjust transparent metal layer work content as transparent metal layer
Number, control transparent metal layer electronics and active layer different impurities energy level on hole-recombinations, with this adjust active layer 450nm,
550nm and 700nm wave band shines ratio, and then adjusts LED white light colour temperature.
The LED component of the embodiment of the present invention is described in detail above, in addition, the present invention also provides above-mentioned
The manufacturing method of LED component is described in detail its manufacturing method below with reference to specific embodiment.
In the present embodiment, active layer is using the p-type GaN material for mixing Mg, and potential barrier insulating layer is using the intrinsic six sides nitrogen of two dimension
Change boron, transparent metal layer has the Cu nanometer line network of different work functions using package different metal.
When specifically preparing the potential barrier insulating layer of intrinsic two-dimentional hexagonal boron nitride material, CVD can be used
The method of (Chemical Vapor Deposition, chemical vapor deposition).
Specifically, intrinsic two-dimentional hexagonal boron nitride can be grown using the method for CVD in copper substrate, it can be by adding
Hot boron azane (Borazane) generates precursor gas, is brought precursor gas in reaction chamber by carrier gas, copper substrate is placed in instead
It answers in chamber, thus, intrinsic two-dimentional hexagonal boron nitride is grown in copper substrate.In addition, can also lead to before being passed through precursor gas
Enter H2(hydrogen) and Ar (argon gas), and thermal annealing is carried out to copper substrate, to remove the oxide of brass bottom surface.It is specific at one
Example in, carrier gas H2And Ar, the air pressure of reaction chamber is evacuated to 10-4Torr, when the temperature of reaction chamber is 800-1000 DEG C,
It is passed through 10 minutes H2And Ar, H2Flow with Ar is respectively 10sccm and 20sccm, carries out thermal annealing to remove copper substrate table
The oxide in face；Then, it is passed through the H that flow is respectively 8sccm and 20sccm2With the carrier gas of Ar, precursor gas is loaded into and is reacted
Chamber, reaction grows intrinsic two-dimentional hexagonal boron nitride in copper substrate, after reaction, be passed through flow be respectively 5sccm and
The H of 20sccm2Cooling processing is carried out as protective gas with Ar, until room temperature.
When specific preparation two dimension mixes the active layer of p-type GaN of Mg, MOCVD (Metal-Organic can be used
Chemical Vapor Deposition, metal-organic chemical vapor deposition equipment) method.Specifically, can be in sapphire
The p-type GaN of Mg is mixed on substrate using the method growth of MOCVD, impurity energy level is Mg for Ga, oxo nitrogen, nitrogen vacancy impurity energy level.
The potential barrier insulating layer is transferred on the active layer.In the present embodiment, PMMA (poly- methyl can be used
Methyl acrylate) supporting film transfer method, the transfer of potential barrier insulating layer is realized, in the present embodiment, first in intrinsic hexagonal boron nitride
Spin coating PMMA layers of protective layer on layer is then removed copper substrate using etching solution, then, will be covered with PMMA layers intrinsic six
Square boron nitride layer is transferred on active layer, then, is removed PMMA layers using acetone soln, in addition, may further be by adding
Heat to 500 DEG C of modes remove remaining PMMA, can for the SEM photograph being transferred to intrinsic hexagonal boron after active layer
Transfer effect to see intrinsic hexagonal boron is good, and surface texture shape is completely transferred to active layer surface.It is formed
The first electrode being electrically connected with the active layer, and the second electrode being electrically connected with the transparent metal layer.
In the present embodiment, first electrode be with the matched nickel gold electrode of active layer work function, by anneal 500 DEG C move back
Fire forms Ohmic contact.Second electrode can be Ag electrode, can be formed by plating Ag technique.On the potential barrier insulating layer
Transparent metal layer is formed, the light that the transparent metal layer allows the active layer to generate penetrates.
In the present embodiment, transparent metal layer can be pure Cu metal nanometer line, wrap up in Pt (platinum), Ni (nickel), Al (aluminium),
Ga (gallium), graphite dilute metal nanometer line and ITO are as transparent metal layer.Specifically, can be by ultrasonic vibration by copper nanometer
Line is dispersed in hexane solution, and the copper nano-wire in the solution is evenly distributed on filter membrane by Suction filtration device, and
Navicular seal be can use afterwards by the copper nano-wire stamp transfer on filter membrane to potential barrier insulating layer, so that transparent metal layer is formed,
Later, the organic matter on nano wire can be removed by annealing process, while improving copper nano-wire grid electric conductivity and mechanicalness
Can, to obtain the metallic film conductive grid being evenly distributed.
So far single-chip unstressed configuration pink colour temperature adjustable white light of embodiment of the present invention LED is formd.
The above is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, this those skilled in the art
It is easily envisaged that variation disclosed in this invention or technical scope.Alternative solution is intended to cover within the scope of the invention.
Therefore, protection scope of the present invention should be determined by the scope of the claims.
Claims (10)
1. a kind of unstressed configuration powder Single chip white light LED component of adjustable color, characterized by comprising:
Substrate；
Active layer on substrate, the active layer are N-shaped or p-type GaN semiconductor layer；
It is the first electrode that N-shaped or p-type GaN semiconductor layer are connect with the active layer；
Potential barrier insulating layer on the active layer, the potential barrier insulating layer are ultra-thin medium material；
Transparent metal layer on the potential barrier insulating layer, the light that the transparent metal layer allows the active layer to generate penetrate；
The transparent metal layer of unlike material has different work functions；
The second electrode being electrically connected with transparent metal layer, the second electrode prevent power supply from directly contacting with transparent metal layer；
By replacing the transparent metal layer of different work functions, so that carrier tunnelling is to active layer and different impurities energy level current-carrying
The compound sending wide-spectrum white-light of son.
2. a kind of unstressed configuration powder Single chip white light LED component of adjustable color according to claim 1, it is characterised in that:
The LED component is the LED component of Schottky barrier.
3. a kind of unstressed configuration powder Single chip white light LED component of adjustable color according to claim 1, it is characterised in that:
The substrate is one of Sapphire Substrate, silicon substrate, silicon carbide substrates, zinc oxide substrate, is not limited to transparent or non-
It is transparent.
4. a kind of unstressed configuration powder Single chip white light LED component of adjustable color according to claim 1, it is characterised in that:
The N-shaped or p-type GaN semiconductor layer have different impurity energy levels；The impurity of the N-shaped or p-type GaN semiconductor layer passes through master
Dynamic doping introduces or non-active doping introduces, and corresponding to different luminescence bands, the sending of different type Carrier recombination can occur
The wide-spectrum white-light of different-colour, the spectral range of the white light are 400-900nm.
5. a kind of unstressed configuration powder Single chip white light LED component of adjustable color according to claim 1, it is characterised in that:
The electrode is Ohm contact electrode.
6. a kind of unstressed configuration powder Single chip white light LED component of adjustable color according to claim 1, it is characterised in that:
The material of the potential barrier insulating layer is two-dimentional hexagonal boron nitride, two-dimentional transient metal sulfide, ultra-thin silica, Al2O3、
The thickness of one of AlN or a variety of, potential barrier insulating layer are greater than 1 nanometer.
7. a kind of unstressed configuration powder Single chip white light LED component of adjustable color according to claim 1, it is characterised in that:
The transparent metal layer is in indium-doped tin oxide, silver nanowires, copper nano-wire, alloy nano-wire, graphene or carbon nanotube
It is one or more, allow visible light-transmissive.
8. a kind of manufacturing method of single-chip unstressed configuration pink colour temperature adjustable white light LED component, it is characterised in that include the following steps:
1) active layer and potential barrier insulating layer are grown respectively, and the active layer is N-shaped or p-type GaN, and the potential barrier insulating layer is two
Tie up material layer；
2) p-type is synthesized on substrate or N-shaped GaN forms active layer, be laid with the first electrode contacted with active layer, form ohm and connect
Touching；
3) method that the potential barrier insulating layer is grown by transfer or directly is constructed to the active layer；
4) transparent metal layer is formed on the potential barrier insulating layer, constitutes second electrode.
9. a kind of manufacturing method of single-chip unstressed configuration pink colour temperature adjustable white light LED component according to claim 8, special
Sign is: potential barrier insulating layer is formed on active layer using the method for transfer or growth in step 3, thickness is greater than 1 nanometer.
10. according to a kind of manufacturing method of single-chip unstressed configuration pink colour temperature adjustable white light LED component of claim 8, feature exists
In: transparent transparent metal layer is formed on potential barrier insulating layer using the method for coining, transfer or deposition in step 4.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113178504A (en) * | 2021-03-10 | 2021-07-27 | 厦门大学 | Synchronous uplink and downlink light illumination communication single-chip device and manufacturing method and application thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080278069A1 (en) * | 2001-11-30 | 2008-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device |
| WO2010129889A2 (en) * | 2009-05-07 | 2010-11-11 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
| WO2012044887A1 (en) * | 2010-09-30 | 2012-04-05 | Performance Indicator, Llc. | Photolytically and environmentally stable multilayer structure for high efficiency electromagentic energy conversion and sustained secondary emission |
| CN102709417A (en) * | 2011-03-25 | 2012-10-03 | Lg伊诺特有限公司 | Light emitting device and method for manufacturing the same |
| CN105226150A (en) * | 2015-10-10 | 2016-01-06 | 山东大学 | A kind of N-B is two mixes efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate and its preparation method and application |
| KR101666836B1 (en) * | 2015-08-20 | 2016-10-17 | 한국산업기술대학교산학협력단 | Growth technique for phosphor-free white light emitting diode |
| CN108389941A (en) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof |
| CN108682703A (en) * | 2018-05-30 | 2018-10-19 | 厦门大学 | A kind of spin detection of luminescence one device and preparation method thereof of full electricity regulation and control |
-
2019
- 2019-07-08 CN CN201910611191.8A patent/CN110429159B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080278069A1 (en) * | 2001-11-30 | 2008-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device |
| WO2010129889A2 (en) * | 2009-05-07 | 2010-11-11 | Massachusetts Institute Of Technology | Light emitting device including semiconductor nanocrystals |
| WO2012044887A1 (en) * | 2010-09-30 | 2012-04-05 | Performance Indicator, Llc. | Photolytically and environmentally stable multilayer structure for high efficiency electromagentic energy conversion and sustained secondary emission |
| CN102709417A (en) * | 2011-03-25 | 2012-10-03 | Lg伊诺特有限公司 | Light emitting device and method for manufacturing the same |
| KR101666836B1 (en) * | 2015-08-20 | 2016-10-17 | 한국산업기술대학교산학협력단 | Growth technique for phosphor-free white light emitting diode |
| CN105226150A (en) * | 2015-10-10 | 2016-01-06 | 山东大学 | A kind of N-B is two mixes efficient white light LED structure of the GaN base unstressed configuration powder of SiC substrate and its preparation method and application |
| CN108389941A (en) * | 2018-04-08 | 2018-08-10 | 中国科学院半导体研究所 | It is aobvious to refer to adjustable unstressed configuration powder Single chip white light LED component and preparation method thereof |
| CN108682703A (en) * | 2018-05-30 | 2018-10-19 | 厦门大学 | A kind of spin detection of luminescence one device and preparation method thereof of full electricity regulation and control |
Non-Patent Citations (2)
| Title |
|---|
| HUANG, YY，ET CL.,: "Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network", 《SCIENTIFIC REPORTS》 * |
| MASINI, G，ET CL.,: "White-light emission from porous-silicon-aluminum Schottky junctions", 《NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113178504A (en) * | 2021-03-10 | 2021-07-27 | 厦门大学 | Synchronous uplink and downlink light illumination communication single-chip device and manufacturing method and application thereof |
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