CN102709458A - LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof - Google Patents
LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof Download PDFInfo
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- CN102709458A CN102709458A CN2012101570681A CN201210157068A CN102709458A CN 102709458 A CN102709458 A CN 102709458A CN 2012101570681 A CN2012101570681 A CN 2012101570681A CN 201210157068 A CN201210157068 A CN 201210157068A CN 102709458 A CN102709458 A CN 102709458A
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Abstract
The invention discloses an LED (Light-Emitting Diode) packaging structure using a transparent oxide substrate, comprising a plane type transparent oxide substrate, a fluorescent thin film and more than one LED chip, wherein a conductive pattern is arranged on the front face of the transparent oxide substrate; an LED bonding region is reserved on the conductive pattern and the LED chips are arrayed on the LED bonding region; and the fluorescent thin film is packaged on the front face of the transparent oxide substrate to seal the LED chips between the transparent oxide substrate and the fluorescent thin film. According to the LED packaging structure using the transparent oxide substrate provided by the invention, a traditional structure for emitting light from one side is broken through, the light emitting efficiency is extremely improved, and the heat radiation capability is improved; the reliability and the consistency of a product are improved by a full-page packaging method, so that the LED packaging structure is suitable for industrial rapid and efficient production; and furthermore, isolating glue is avoided being used and the service life of the product can be prolonged effectively.
Description
Technical field
The present invention relates to the LED encapsulation technology, relate in particular to a kind of LED sealing structure and method for sealing thereof that uses the transparent oxide substrate.
Background technology
Along with the continuous development of LED in lighting field, people require increasingly highly to its light extraction efficiency, and the encapsulating material of LED, encapsulating structure and method for packing all are the key factors that influences its light extraction efficiency; Mainly improve the light extraction efficiency of LED at present through transparent substrates technology, metal film reflection technology, flip chip technology (fct).
Usually blue light, green light LED chip are the LED chip architecture layers through MOCVD (metallo-organic compound chemical gaseous phase deposition) technology growing GaN (gallium nitride) base on Sapphire Substrate, and the p type island region of being tied by P/N above the light transmission that sends the luminous zone penetrates; Because P type GaN conductive performance is not good, for obtaining good current expansion, need to form the metal electrode layer that layer of Ni-Au forms on surface, P district through evaporation coating technique, P district lead-in wire is drawn through this layer metal electrode layer; For the current expansion that obtains, the Ni-Au metal electrode layer just can not be too thin, and for this reason, the luminous efficiency of led chip will receive very big influence, thereby the thickness of metal electrode layer need be taken into account two factors of current expansion and light extraction efficiency usually simultaneously.In order to overcome above shortcoming, flip LED chips has been proposed, it is that the LED wafer is connected on the silicon substrate through flip chip bonding, to improve light emission rate; But still be the one-sided bright dipping of LED wafer on this structure principle, increased the cost and the difficulty of follow-up secondary light-distribution simultaneously, be unfavorable for very much the popularization and the application in market.
In a word, because a series of problems such as opaque substrates, metal electrode layer, led chip still can only one-sided bright dipping, limited the raising of light extraction efficiency, and radiating effect is poor; Simultaneously, single traditional encapsulation automaticity is low, is not suitable for mass production.
Summary of the invention
Goal of the invention: in order to overcome the deficiency that exists in the prior art; The present invention provides a kind of LED sealing structure and method for sealing thereof that uses the transparent oxide substrate; Tie direct bright dipping accomplishing the PN that protection to the plurality of LEDs chip makes full use of chip simultaneously; Effectively improve the light extraction efficiency of led chip, improve the radiating effect of led chip simultaneously, be suitable for big batch production.
Technical scheme: for realizing above-mentioned purpose, the technical scheme that the present invention adopts is:
Use the LED sealing structure of transparent oxide substrate; Comprise a slice plane formula transparent oxide substrate, a slice fluorescence membrane and an above led chip; Front at the transparent oxide substrate is provided with conductive pattern, on conductive pattern, is reserved with the LED land, and led chip is arranged on the LED land; The fluorescence membrane plastic packaging is in the front of transparent oxide substrate, with the led chip sealing-in between transparent oxide substrate and fluorescence membrane.
This LED sealing structure is the justifying structure; A plurality of led chips of can arranging simultaneously (become array to arrange led chip; Or other set the figure discharging; Led chip is through the conductive pattern conducting, and said conductive pattern can be divided into several electrode districts), can adapt to industrial batch production, automated production; This LED sealing structure adopts the structure of transparent oxide substrate and fluorescence membrane simultaneously, and the restriction of having broken traditional single face bright dipping has realized two-sided bright dipping, has effectively improved its light extraction efficiency; The single relatively LEDs encapsulating structure of this LED sealing structure has greatly improved radiating effect simultaneously, can improve its useful life.
Said led chip can also be flip LED chips for packed LED chip (promptly peeling off the led chip that the sapphire circuit substrate only keeps original PN junction); When led chip was packed LED chip, it adopted the wire jumper mode of connection and conductive pattern conducting.In general, we adopt flip LED chips, normal wiring.
The material of said transparent oxide substrate is monocrystalline or polycrystalline ceramic, can also in ceramic material, be mixed with fluorescent material, such as Ce; The preferred transparent oxide pottery that contains fluorescent material that adopts most preferably adopts the yttrium-aluminium-garnet that contains fluorescent material; Concrete selected for use yttrium-aluminium-garnet, contain aluminate (such as Ce
3+Aluminate) or the yttrium-aluminium-garnet of one or both materials in the nitride (such as the Eu nitride).Because the light that led chip emits must be launched to both sides through transparent oxide substrate and fluorescence membrane; Excited fluorescent material to produce the transition effects of light, thereby transparent oxide substrate and fluorescence membrane cooperate corresponding red LED chip, blue-light LED chip or green light LED chip just can make that final LED encapsulating structure is a white light LEDs.
The material of said conductive pattern can be copper, aluminium, gold, silver, nickel, zinc, iron, and materials such as graphite, or adopt the transparent conductive oxide material; It can be coated on the transparent oxide substrate through plated film or mode of printing; On conductive pattern, can form the LED land through the printing solder resist.
Use the method for sealing of the LED sealing structure of transparent oxide substrate, comprise the steps:
(1) preparation transparent oxide substrate and fluorescence membrane;
(2) according to the structure of led chip and the mode of connection front surface coated conductive pattern at the transparent oxide substrate;
(3) on conductive pattern, print solder resist, prevent that the scolder trickling from causing the base plate line conducting, to form the LED land;
(4) polishing is carried out in the front of transparent oxide substrate, guaranteed that the interface has the good light characteristic that goes out;
(5) led chip is arranged on the LED land, carries out solid crystalline substance;
(6) with the front of fluorescence membrane plastic packaging at the transparent oxide substrate, make the led chip sealing-in between transparent oxide substrate and fluorescence membrane, form the LED sealing structure that uses the transparent oxide substrate.
In the said step (6), fluorescence membrane preferably adopts the front of the mode plastic packaging of vacuum cold moulding envelope at the transparent oxide substrate
Beneficial effect: the LED sealing structure of use transparent oxide substrate provided by the invention, broken the structure of traditional single face bright dipping, greatly improved light extraction efficiency, improved its heat-sinking capability; While is direct coated with conductive pattern on ceramic substrate, has save the problem of single product needed wire jumper; Justifying formula method for packing has improved reliability of products and consistency, be suitable for industrialization fast, High-efficient Production; In addition, this method has also been avoided the use of insulation rubber (silica gel), can effectively improve product useful life of (comprising each assembly, such as led chip, transparent oxide substrate etc.).
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the structural representation of packed LED chip;
Fig. 3 is the structural representation of flip LED chips;
Fig. 4 is a flow chart of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done explanation further.
Be illustrated in figure 1 as a kind of LED sealing structure that uses the transparent oxide substrate; Comprise a slice plane formula transparent oxide substrate 4, a slice fluorescence membrane 3 and an above led chip 1; Be provided with conductive pattern 2 in the front of transparent oxide substrate 4, on conductive pattern 2, be reserved with the LED land, led chip 1 is arranged on the LED land; Fluorescence membrane 3 plastic packagings are in the front of transparent oxide substrate 4, with the led chip sealing-in between transparent oxide substrate 4 and fluorescence membrane 3.
Said led chip 1 is packed LED chip as shown in Figure 2 or flip LED chips as shown in Figure 3; When led chip 1 was packed LED chip, it adopted the wire jumper mode of connection and 2 conductings of conduction group.
The material of said transparent oxide substrate 4 is yttrium-aluminium-garnet or the yttrium-aluminium-garnet that is doped with fluorescent material, cooperates corresponding red LED chip, blue-light LED chip or green light LED chip just can make that final LED encapsulating structure is a white light LEDs.
Said conductive pattern 2 is coated on the transparent oxide substrate 4 through plated film or mode of printing; On conductive pattern 2, form the LED land through the printing solder resist.
The method for sealing of the LED sealing structure of the above-mentioned use transparent oxide of a kind of sealing-in substrate comprises the steps:
(1) preparation transparent oxide substrate 4 and fluorescence membrane 3;
(2) according to the structure of led chip 1 and the mode of connection front surface coated conductive pattern 2 at transparent oxide substrate 4;
(3) the printing solder resist forms the LED land on conductive pattern 2;
(4) polishing is carried out in the front of transparent oxide substrate 4;
(5) led chip 1 is arranged on the LED land, carries out solid crystalline substance;
(6) fluorescence membrane 3 is passed through vacuum cold moulding encapsulation technique plastic packaging in the front of transparent oxide substrate 4, make led chip 1 sealing-in between transparent oxide substrate 4 and fluorescence membrane 3, form the LED sealing structure that uses the transparent oxide substrate.
The above only is a preferred implementation of the present invention; Be noted that for those skilled in the art; Under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (9)
1. use the LED sealing structure of transparent oxide substrate; It is characterized in that: this LED sealing structure comprises a slice plane formula transparent oxide substrate (4), a slice fluorescence membrane (3) and an above led chip (1); Be provided with conductive pattern (2) in the front of transparent oxide substrate (4); On conductive pattern (2), be reserved with the LED land; Led chip (1) is arranged on the LED land, and fluorescence membrane (3) plastic packaging is in the front of transparent oxide substrate (4), with led chip (1) sealing-in between transparent oxide substrate (4) and fluorescence membrane (3).
2. the LED sealing structure of use transparent oxide substrate according to claim 1 is characterized in that: said led chip (1) is packed LED chip or flip LED chips; When led chip (1) was packed LED chip, it adopted the wire jumper mode of connection and conductive pattern (2) conducting.
3. the LED sealing structure of use transparent oxide substrate according to claim 1 is characterized in that: the material of said transparent oxide substrate (4) is monocrystalline or polycrystalline ceramic.
4. the LED sealing structure of use transparent oxide substrate according to claim 1 is characterized in that: said transparent oxide substrate (4) is for containing the transparent oxide pottery of fluorescent material.
5. the LED sealing structure of use transparent oxide substrate according to claim 1 is characterized in that: said transparent oxide substrate (4) is for containing the yttrium-aluminium-garnet of fluorescent material.
6. the LED sealing structure of use transparent oxide substrate according to claim 1 is characterized in that: said conductive pattern (2) is coated on the transparent oxide substrate (4) through plated film or mode of printing.
7. the LED sealing structure of use transparent oxide substrate according to claim 1 is characterized in that: go up through the printing solder resist at conductive pattern (2) and form the LED land.
8. use the method for sealing of the LED sealing structure of transparent oxide substrate, it is characterized in that: this method for sealing comprises the steps:
(1) preparation transparent oxide substrate (4) and fluorescence membrane (3);
(2) according to the structure of led chip (1) and the mode of connection front surface coated conductive pattern (2) at transparent oxide substrate (4);
(3) go up the printing solder resist at conductive pattern (2) and form the LED land;
(4) polishing is carried out in the front of transparent oxide substrate (4);
(5) led chip (1) is arranged on the LED land, carries out solid crystalline substance;
(6) with fluorescence membrane (3) plastic packaging in the front of transparent oxide substrate (4), make led chip (1) sealing-in between transparent oxide substrate (4) and fluorescence membrane (3), form to use the LED sealing structure of transparent oxide substrate.
9. the method for sealing of the LED sealing structure of use transparent oxide substrate according to claim 6 is characterized in that: in the said step (6), fluorescence membrane (5) passes through the front of the mode plastic packaging of vacuum cold moulding envelope in transparent oxide substrate (4).
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| CN2012101570681A CN102709458A (en) | 2012-05-21 | 2012-05-21 | LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078049A (en) * | 2013-02-07 | 2013-05-01 | 张刚维 | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method |
| CN103075667A (en) * | 2013-01-11 | 2013-05-01 | 郑香奕 | Full-angle light emitting diode (LED) light source body and production process for same |
| CN103196056A (en) * | 2013-03-29 | 2013-07-10 | 郑香奕 | LED (light-emitting diode) mirror plane light source body and production process thereof |
| CN103335226A (en) * | 2013-06-19 | 2013-10-02 | 福建省万邦光电科技有限公司 | LED (light emitting diode) bulb lamp capable of emitting lights in all directions |
| CN103855273A (en) * | 2013-12-05 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp substrate and manufacturing process thereof |
| CN104282824A (en) * | 2014-09-26 | 2015-01-14 | 深圳市志金电子有限公司 | Method for manufacturing high-power high-reflectance COB substrate and light source |
| CN104964195A (en) * | 2015-06-24 | 2015-10-07 | 苏州佳亿达电器有限公司 | Foldable LED lamp band based on ITO transparent conductive film |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
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| CN101771117A (en) * | 2010-02-02 | 2010-07-07 | 孙润光 | Light-emitting device and manufacturing method thereof |
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| CN202712176U (en) * | 2012-05-21 | 2013-01-30 | 苏州晶品光电科技有限公司 | LED sealing structure using transparent oxide substrate |
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| US20040124429A1 (en) * | 2002-12-31 | 2004-07-01 | Edward Stokes | Layered phosphor coatings for led devices |
| CN101771117A (en) * | 2010-02-02 | 2010-07-07 | 孙润光 | Light-emitting device and manufacturing method thereof |
| CN102270730A (en) * | 2011-07-27 | 2011-12-07 | 晶科电子（广州）有限公司 | LED (light emitting diode) device free of gold wires |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103075667A (en) * | 2013-01-11 | 2013-05-01 | 郑香奕 | Full-angle light emitting diode (LED) light source body and production process for same |
| CN103078049A (en) * | 2013-02-07 | 2013-05-01 | 张刚维 | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method |
| CN103196056A (en) * | 2013-03-29 | 2013-07-10 | 郑香奕 | LED (light-emitting diode) mirror plane light source body and production process thereof |
| CN103335226A (en) * | 2013-06-19 | 2013-10-02 | 福建省万邦光电科技有限公司 | LED (light emitting diode) bulb lamp capable of emitting lights in all directions |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
| CN103855273A (en) * | 2013-12-05 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp substrate and manufacturing process thereof |
| CN104282824A (en) * | 2014-09-26 | 2015-01-14 | 深圳市志金电子有限公司 | Method for manufacturing high-power high-reflectance COB substrate and light source |
| CN104964195A (en) * | 2015-06-24 | 2015-10-07 | 苏州佳亿达电器有限公司 | Foldable LED lamp band based on ITO transparent conductive film |
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Application publication date: 20121003 |