CN103078049A - COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method - Google Patents
COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method Download PDFInfo
- Publication number
- CN103078049A CN103078049A CN2013100497611A CN201310049761A CN103078049A CN 103078049 A CN103078049 A CN 103078049A CN 2013100497611 A CN2013100497611 A CN 2013100497611A CN 201310049761 A CN201310049761 A CN 201310049761A CN 103078049 A CN103078049 A CN 103078049A
- Authority
- CN
- China
- Prior art keywords
- substrate
- light source
- electrode
- led chip
- led light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a COB (Chip On Board) packaged LED (Light Emitting Diode) light source. The LED light source comprises a substrate, an electrode, an LED chip and a fluorescent glue, wherein the electrode is arranged on the substrate; the LED chip is arranged on a positive surface of the substrate and is electrically connected with the electrode; the fluorescent glue covers the LED chip; and the substrate is a transparent substrate, and the heat dispersion of the transparent substrate is good. According to the COB packaged LED light source and a manufacturing method thereof provided by the invention, the substrate is changed from an opaque substrate into a cooling transmitting substrate with high efficiency, so that the COB packaged LED light source can shine 360 degrees, an emitting angle and a luminous range of a product are extended, and a lighting effect of the light source is improved. In addition, a substrate material is good in heat dissipation performance and fast in heat dispersion velocity, so that the condition that the fluorescent glue is subjected to aging failure in a high-temperature working environment is avoided, the service life of the fluorescent glue is prolonged, and the thermal resistance and lumens depreciation of the product is reduced. Therefore, the COB packaged LED light source and the manufacturing method can be suitable for a COB packaging technology with high power.
Description
Technical field
The present invention relates to integrated semiconductor illumination components and parts, relate in particular to a kind of COB encapsulated LED light source and preparation method thereof.
Background technology
LED(Light Emitting Diode); a kind of luminous semiconductor element, because its controllability is good, simple in structure; volume is small and exquisite; color is pure, abundant, shock-resistant, vibration resistance; the characteristics such as the response time is fast; being recognized is one of the high-tech product of tool development prospect of 21 century, when causing the illumination revolution, also for promote energy-saving and emission-reduction, major contribution is made in environmental protection.
COB is that Chip On Boarding(chip on board directly fills) english abbreviation, a kind ofly by adhesive or scolder led chip directly to be pasted PCB(Printed Circuit Board) on the plate, realize again the encapsulation technology of electrical interconnection between chip and pcb board by Bonding.The COB technology is mainly used in the LED encapsulation of high-power multi-core chip arrays, with SMT(Surface Mounted Technology surface mounting technology) compare, not only greatly improve package power density, and reduced packaging thermal resistance.
In the known technology in the field of business, widely adopted by semiconductor lighting industry institute based on the COB encapsulation technology of the substrates such as aluminium, aluminium oxide, aluminium nitride.Yet, no matter be the metal substrate such as aluminium substrate, or the ceramic substrate such as aluminium oxide, aluminium nitride, the led light source that adopts the COB packaging technology to make, all have the less problem of product lighting angle and scope, general lighting angle is confined to 120 degree or more in the low-angle, product is used and is very limited.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of COB encapsulated LED light source and preparation method thereof, compared with prior art, the present invention has increased the lighting angle of light source.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of COB encapsulated LED light source comprises substrate, electrode, led chip and fluorescent glue; Described electrode is arranged on this substrate; Described led chip is arranged on substrate face, and described led chip and described electrode are electrically connected; Described fluorescent glue covers described led chip; Wherein, described substrate is transparent substrates, and the heat dispersion of this transparent substrates is good.
Preferably, the light transmittance of described transparent substrates is more than or equal to 30%.
Preferably, described transparent bright substrate heat dispersion well specifically, the conductive coefficient of described transparent substrates is more than or equal to 10W/mk.
Preferably, described light-transmissive substrates is Sapphire Substrate or transparent alumina ceramics substrate.
Preferably, the top in described fluorescent glue vertical section is the convex arcuate structure.
Preferably, when adopting positive assembling structure to connect described led chip, the mode that described led chip and described electrode are electrically connected is to adopt conductive lead wire that the electrode of described led chip and the counterpart of electrode are electrically connected, to form electric loop.
Preferably, the mode that described led chip is arranged on substrate face is that the described led chip back side is bonded in substrate face by crystal-bonding adhesive.
Preferably, when adopting inverted structure to connect described led chip, the mode that described led chip and described electrode are electrically connected is, described led chip is welded on electrode part corresponding to substrate face, the counterpart of the electrode of the electrode of described led chip and substrate face is electrically connected, to form electric loop.
Preferably, this led light source also comprises, is arranged on the fluorescent glue on the substrate side end face.
Preferably, this led light source also comprises, is arranged on the printing opacity box dam at fluorescent glue edge.
Preferably, it is characterized in that, described electrode material is silver, copper or gold.
A kind of manufacture method of COB encapsulated LED light source comprises: cut out slot cut at substrate with the front of substrate; Form electrode at described substrate with substrate; Led chip is electrically connected on the described electrode; With fluorescent glue described led chip is carried out sealing; Described substrate is cut open along described slot cut with substrate, obtained a plurality of led light sources.
Preferably, described is laser cutting or cutter cutting at substrate with the cutting method that the front of substrate cuts out slot cut.
Preferably, described substrate is silk-screen printing technique with the technique that forms the electrode employing on the substrate.
Preferably, described substrate comprises with the method that forms electrode on the substrate: adopt sputter or evaporation process to form metal level in light-transmissive substrates; Adopt photoetching process to form the photoresist layer with electrode pattern at described layer on surface of metal; Adopt dry etching or wet corrosion technique, remove the metal layer material that is not covered by described photoresist layer, obtain metal electrode.
Preferably, when adopting inverted structure to connect described led chip, the described mode that led chip is electrically connected on the described electrode is, with the electrode welding of the described led chip counterpart to electrode.
Preferably, when adopting positive assembling structure to connect described led chip, the described mode that led chip is electrically connected on the described electrode is the electrode of described led chip to be electrically connected to the counterpart of electrode by conductive lead wire.
Preferably, when adopting positive assembling structure to connect described led chip, also comprise: the described led chip back side is bonded in described substrate with on the substrate with crystal-bonding adhesive.
Preferably, describedly with fluorescent glue the process that described led chip carries out sealing is comprised: adopt fluorescent glue to cover described led chip surface; Described led light source is toasted, with the sclerosis fluorescent glue.
Preferably, the process that described employing fluorescent glue is covered described led chip surface is: form the box dam with definite shape with substrate at substrate, fluorescent glue is clicked and entered in the described box dam; Perhaps, described led light source is arranged mould, fluorescent glue is injected described mould.
Preferably, also comprise behind the fluorescent glue in sclerosis: remove substrate with on-chip described box dam; Perhaps, remove described mould on the described led light source.
Compared with prior art, technique scheme has the following advantages:
COB encapsulated LED light source provided by the present invention and preparation method thereof, by changing substrate into the high efficiency and heat radiation light-transmissive substrates by opaque substrate, make the present invention can 360 degree luminous, improved product lighting angle and light emitting region, improved the light efficiency of light source.
And because the backing material thermal diffusivity is good, radiating rate is fast, has avoided the situation of fluorescent glue ageing failure in high-temperature work environment, the life-span of having improved fluorescent glue, reduced thermal resistance and the light decay of product,
Can adapt to high-power COB packaging technology.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the floor map of the led light source of the embodiment of the invention one;
Fig. 2 is the profile of the led light source of the embodiment of the invention one;
Fig. 3 is the connection diagram of led chip and the electrode of the embodiment of the invention one;
Fig. 4 is the led chip schematic diagram of the embodiment of the invention;
Fig. 5 (A)-5(B) is the led chip connection diagram of the embodiment of the invention;
Fig. 6-8 is the led light source preparation method part steps schematic diagram of the embodiment of the invention five;
Fig. 9-12 is the led light source preparation method part steps schematic diagram of the embodiment of the invention six.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, technical scheme in the embodiment of the invention is clearly and completely described so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.The present invention is described in detail in conjunction with schematic diagram; when the embodiment of the invention was described in detail in detail, for ease of explanation, the profile of expression device architecture can be disobeyed general ratio and be done local the amplification; and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Embodiment one
Just as described in the background section, the led light source of COB of the prior art encapsulation all exists product lighting angle and the less problem of scope, and general lighting angle is confined to 120 degree or more in the low-angle, product is used and is very limited.
For these reasons, the present embodiment discloses a kind of COB encapsulated LED light source, the structure of this light source as shown in Figure 1-Figure 3, Fig. 1 is its floor map, Fig. 2 is its profile, Fig. 3 is the connection diagram of its led chip and electrode.This led light source comprises:
The light transmittance of preferred light-transmissive substrates is more than or equal to 30% in the present embodiment.By selecting the large substrate of light transmittance, so that the present embodiment can bottom-emission, increased the lighting angle of this light source.
But, some LED product uses glass, acrylic or transparent resin to be backing material, the inventor studies discovery, these material poor radiation, not only affected the useful life of fluorescent glue, this kind product also increased the thermal resistance of product, so that can not be applied to the COB packaging technology of heavy-power LED product.
Preferred light-transmissive substrates conductive coefficient is greater than 10W/mk in the present embodiment.Because good heat conductivity makes this led light source rapid heat dissipation, the useful life of having improved fluorescent glue.And, reduced thermal resistance and the light decay of product, and can be adapted to the COB packaging technology of heavy-power LED product.
Concrete, the substrate that uses in the present embodiment is preferably the transparent alumina ceramics substrate.
Electrode is metal electrode in the present embodiment, and preferred electrode materials is silver, copper or gold, and fluorescent glue is preferably the mixture of fluorescent material and silica gel.
Electrode pattern in the present embodiment can carry out suitable adjustment according to quantity and the needs of led chip, and is concrete, and the electrode that the electrode pattern of the present embodiment forms can connect 16 led chips.
Electrode 200 in the present embodiment can adopt the combination of silk-screen printing technique or sputtering technology and photoetching, etching technics to be formed on the light-transmissive substrates 100.Wherein, the specific implementation process of silk-screen printing technique is, with the design producing of the electrode of required printing on printing screen, that is: in printing screen top electrode pattern part hollow out, other parts are hollow out not, by printing screen metal paste is printed to substrate, behind baking or high temperature sintering, form electrode.
The detailed process of the combination of sputtering technology and photoetching, etching technics is, adopt sputter or evaporation process to form metal level in light-transmissive substrates, again through obtaining having at layer on surface of metal the photoresist layer of electrode pattern after the photoetching, again take this photoresist layer as mask, adopt dry etching or wet corrosion technique to remove metal layer material not covered by photoresist, obtain metal electrode.
Simultaneously, the present embodiment can also be processed at the enterprising electroplating of acquired metal electrode, increases intermediate metal, to improve the conductivity of electrode.
Electrode 200 is used for the electric connection with led chip 300, the pattern of electrode can be arranged on according to the printing opacity needs edge, side end face or the substrate bottom of substrate, and, electrode is divided into anodal part and negative pole part, anodal part is used for and the positive pole of led chip is electrically connected, negative pole partly is used for and the negative pole of led chip is electrically connected, to form electric loop.
Led chip 300 adopts positive assembling structure to connect led chip in the present embodiment, and as shown in Figure 4, the positive electrode P of led chip and negative electrode N are distributed in the front of chip, and the positive concrete led chip of assembling structure connected mode is connected connection shown in Fig. 5 (A) with electrode.
This positive assembling structure connected mode is: the positive electrode P in led chip 300 fronts is electrically connected by the anodal part of conductive lead wire and electrode 200, the negative electrode N in led chip 300 fronts partly is electrically connected by the negative pole of conductive lead wire and electrode 200, to form electric loop.By above connection, make led chip can conducting luminous.
For fixed L ED chip 300, the led chip back side is bonded in substrate face by crystal-bonding adhesive.Crystal-bonding adhesive in the present embodiment is preferably transparent or the silver lustre crystal-bonding adhesive, to increase the translucent effect of the present embodiment.
In the present embodiment, the led light source that adopts the transparent alumina ceramics substrate to make is because the transparent alumina ceramic material light transmittance is higher than 60%, so that the led light source of the present embodiment incessantly can be positive luminous, can also see through light-transmissive substrates luminous, realize that 360 degree of led light source are luminous.Simultaneously, because the heat dispersion of transparent alumina ceramics substrate is good, conductive coefficient is higher than 20W/mk, can quick heat radiating when the work of this led light source, in the useful life of having improved fluorescent glue, prolonged useful life of this light source, reduced the thermal resistance of product, prolonged the useful life of this light source, can be applied to the COB encapsulation of heavy-power LED product, and obviously prolong the useful life of this light source.
Embodiment two
The present embodiment place different from a upper embodiment is, adopts Sapphire Substrate to make led light source in the present embodiment.Because the light transmittance of sapphire material makes this luminous efficiency of source up to more than the 130lm/W far above 80%.And because the conductive coefficient of sapphire material reaches 25W/mk, rapid heat dissipation when being worked by the led light source of its making makes reach 50000 hours the useful life of this light source, and than conventional aluminum substrate higher temperature tolerance is arranged.
Embodiment three
The present embodiment place different from above-described embodiment is, adopts the inverted structure connected mode in the present embodiment.In this inverted structure connected mode, need to a part of electrode be set in substrate interior, this partial electrode also comprises respectively anodal part and negative pole part, its connected mode is specially shown in Fig. 5 (B):
Make two electrodes of led chip by the counterpart electric connection of direct after the soldering paste reflow soldering and electrode 200.Concrete, the anodal part of led chip is soldered to the anodal part of electrode, and the negative pole of led chip partly is soldered to the negative pole part of electrode.
This mode has been saved the step by the conductive lead wire connecting electrode, simultaneously, the chip light emitting face major part of inverted structure has improved light efficiency and the luminous flux of chip at the fluorescent glue face of this light source, and then so that the technical scheme that the present invention announces has had higher light efficiency.
Embodiment four
The present embodiment place different from above-described embodiment be, the fluorescent glue edge in the present embodiment is provided with the printing opacity box dam, and this printing opacity box dam is used for crossing the default shape of fluorescent glue before fluorescent glue is set.
Embodiment five
Corresponding with above-described embodiment, the present embodiment discloses a kind of method of making this led light source, and the method can comprise the steps:
Step S1: at the cut out slot cut of substrate with substrate.
Concrete, if this substrate sapphire material, can make substrate with the positive horizontal and vertical grooving that has that forms as shown in Figure 6 of substrate by laser cutting, thereby substrate is divided into a plurality of rectangular elements with the substrate front according to substrate shape, and these rectangular elements continue to cut open the substrate that just obtains this light source.Be preferably in the present embodiment the front along substrate shape edge cuts V-type groove.
If this substrate transparent alumina ceramic material can use cutter that substrate is cut.
Concrete, substrate can be configured to rectangle in the present embodiment, also can be arranged to other shapes that need as circular, oval etc.; Through hole or slotted eye can also be set so that follow-up cutting on substrate at substrate.Perhaps, form slot cut or run through the through hole of this substrate base and this through hole is carried out metalized at substrate base, so that the connection of this light source finished product.
Step S2: form electrode with substrate at substrate.
Adoptable process and technical process are described in the manufacturing process of electrode in embodiment one in the present embodiment.Concrete, use the method among the embodiment one in substrate each rectangular element with the substrate front, to form respectively electrode, the pattern of electrode arranges according to quantity and the needs of led chip.In addition, if the connected mode of this light source electrode and chip is the inverted structure mode, the part that then need to led chip be set in this light source inside arranges internal electrode, and, need to partly tell anodal part and negative pole part to the electrode of inside, to adapt to the needs of led chip.
Step S3: led chip is electrically connected on the electrode.
Concrete, if when adopting in the present embodiment inverted structure to connect led chip, the mode that can adopt welding is electrically connected to electrode part corresponding to substrate face with the electrode at the led chip back side.
If when adopting positive assembling structure to connect led chip, the led chip front is electrically connected to the counterpart of electrode by conductive lead wire, its concrete implementation method is, with nation's fixed thread led chip front and outer electrode being carried out nation decides, final formation is electrically connected, and tests to be electrically connected and test.
In addition, the led chip back side can be bonded in the mode of crystal-bonding adhesive the inside of each rectangular element with fixed L ED chip; Wherein, crystal-bonding adhesive is transparent or the silver lustre crystal-bonding adhesive, to increase light emitting region.
Step S4: led chip is carried out sealing with fluorescent glue.
Concrete, the present embodiment realizes that the sealing process of this step may further comprise the steps:
Step S401, the edges of regions that covers fluorescent glue at the needs corral dam that bonds.
Box dam is the device of preferably using in the manufacturing process in the manufacture method of the present embodiment, can not add as required use in additive method.Described box dam obtains after box dam glue is dried, and the box dam glue in the present embodiment is preferably silica gel, and its shape can arrange according to the fluorescent glue shape, and box dam is annular in the present embodiment.Purpose is moulding for follow-up fluorescent glue point glue, and fluorescent glue is formed have the side view of certain altitude, to increase light efficiency.
Step S402 carries out fluorescent glue point glue in box dam.
The fluorescent glue of the present embodiment is the mixture of fluorescent material and viscosity 10000 above silica gel.During point glue, fluorescent glue is injected equably the interior ring of box dam.
Step S403, the baking hardening fluorescent glue.
Concrete, the baking fluorescent glue makes its sclerosis, and the top in the fluorescent glue vertical section after sclerosis is shaped is arc, and the surface is for having the dimpling shape arcuate structure of tension force.
Step S404 removes the on-chip box dam of substrate.
Remove box dam, expose the side of the fluorescent glue after the sclerosis.Make the light source can lateral emitting, increase light efficiency.
Step S5: substrate is cut open along slot cut with substrate, obtained a plurality of led light sources.
Concrete, with substrate with substrate longitudinally grooving be divided into a plurality of bar shaped substrate unit.Concrete cutting pattern as shown in Figure 7.Each bar shaped substrate unit is divided into a plurality of rectangular elements along horizontal grooving, and concrete cutting pattern as shown in Figure 8.
Wherein, the order in the above-mentioned steps between the part steps can be changed mutually, but does not represent any independent assortment of order between these steps.
Embodiment six
The present embodiment be with difference above-described embodiment, the present embodiment mainly discloses other implementations of step S5, and is concrete, and the electrode pattern in the present embodiment as shown in Figure 9.The fluorescent glue glue sealing method of the present embodiment can comprise following several:
Glue sealing method 1
Step S411 carries out fluorescent glue point glue to led chip.Concrete, guaranteeing as shown in figure 10 the complete substrate surface that covers of fluorescent glue, the fluorescent glue surface forms the dimpling shape arcuate structure with tension force.
Step S412 carries out short baking, and is long roasting, makes the fluorescent glue sclerosis.Concrete, short the baking in the present embodiment is that between 140 ℃ ~ 160 ℃, stoving time is 20 minutes ~ 40 minutes, and the sclerosis of fluorescent glue surface is shaped; Length is roasting to be, between 140 ℃ ~ 160 ℃, stoving time is 90 minutes ~ 150 minutes, and the whole sclerosis of fluorescent glue is shaped, and it is arc that this step makes the top in the fluorescent glue vertical section after being shaped of hardening.
The method has the simple advantage of operation.
Glue sealing method 2
Step S421, the bonding box dam.Concrete, use viscosity 10000 above box dam glue, on the edges of regions of the needs covering fluorescent glue corral dam that bonds.The box dam shape arranges according to the fluorescent glue shape.
Step S422, room temperature vulcanizing.Concrete, make the at room temperature gradually sclerosis of box dam glue.
Step S423 clicks and enters fluorescent glue in the box dam.
Step S424 carries out short baking, and is long roasting, makes the fluorescent glue sclerosis.
Step S425 removes box dam.Concrete, fluorescent glue 400 shapes behind the removal box dam are as shown in figure 11.
The led light source light efficiency that this glue sealing method is made is than glue sealing method 1 height.
Glue sealing method 3
This method is similar to glue sealing method 2, and difference is the regional different of box dam that bond, and embodiment is as follows:
Step S431, the bonding box dam.Concrete, use viscosity 10000 above box dam glue, on the edges of regions of the needs covering fluorescent glue two corral dams that bond.Concrete, the box dam colloid rectangularity strip of this method.
Step S432, room temperature vulcanizing.Concrete, make the at room temperature gradually sclerosis of box dam glue.
Step S433 clicks and enters fluorescent glue in the box dam.
Step S434 carries out short baking, and is long roasting, makes the fluorescent glue sclerosis.
Step S435 removes box dam.
The fluorescent glue shape that this method is produced as shown in figure 12, its side is neat smooth vertical shape, makes light source incessantly see through top and bottom luminous, can also see through lateral emitting, the increase light efficiency.This glue sealing method still uses the led light source light efficiency of said method making than glue sealing method 2 height than glue sealing method 2 complexity.
Glue sealing method 4
Step S441 uses mould led chip to be carried out the injecting glue of fluorescent glue.Concrete, molding press is fixed on mould on the substrate of this light source and carries out injecting glue, and preferred, the shape of institute's injected with fluorescent glue can be cuboid or hemisphere.
Step S442 carries out short baking, and is long roasting, makes the fluorescent glue sclerosis.
Step S443 removes mould.This moment, the colloid of fluorescent glue was shaped.
Need to prove, institute's injected with fluorescent glue be shaped as dome shape the time, the light that light source sends can see through the bottom, the dome shape colloid that can also see through fluorescent glue is luminous, because when using box dam, the height of box dam glue is subjected to the impact of self viscosity can only be confined to a certain scope, cause the side height of fluorescent glue can only be confined to altitude range less than or equal to box dam glue, and box dam can only limit the flat shape of fluorescent glue.This method is used mould, and its height and shape can be controlled voluntarily, uses this method making fluorescent glue stereoeffect more obvious.Because three-dimensional colloid produces lens effect, so that the luminous efficiency of source that this glue sealing method forms is higher, particularly the hemisphere colloid produces the convex lens effect, and the more rectangular-shaped colloid of light efficiency is high.
Method for packing 5
Step S451, the two-sided injecting glue that carries out fluorescent glue of the light source after using mould to die bond.
Concrete, this step can be carried out twice injecting glue of front and back with the substrate upper and lower surface that mould or mould bar are fixed on this light source by molding press, and perhaps, molding press uses double-sided die to carry out injecting glue one time.Preferably, the shape of institute's injected with fluorescent glue can be cube or spheroid.
Step S452 carries out short baking, and is long roasting, makes the fluorescent glue sclerosis.
Step S453 removes mould or mould bar.This moment, the colloid of fluorescent glue was shaped, and colloid becomes smooth cubic or sphere-like.
The led light source that forms after this method sealing is than method for packing 4, and anti-pressure ability is better, and light efficiency is higher.
Need to prove the above fluorescent glue glue sealing method that only is, these methods can be applied to after the step S4, also can be applied to after the step S6.Embodiment is as the criterion with the demand to this light source.
Various piece adopts the mode of going forward one by one to describe in this specification, and what each part stressed is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, in other embodiments realization.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (21)
1. a COB encapsulated LED light source is characterized in that, comprises substrate, electrode, led chip and fluorescent glue; Described electrode is arranged on this substrate; Described led chip is arranged on substrate face, and described led chip and described electrode are electrically connected; Described fluorescent glue covers described led chip; Wherein, described substrate is transparent substrates, and the heat dispersion of this transparent substrates is good.
2. COB encapsulated LED light source according to claim 1 is characterized in that, the light transmittance of described transparent substrates is more than or equal to 30%.
3. COB encapsulated LED light source according to claim 2 is characterized in that, described transparent bright substrate heat dispersion well specifically, the conductive coefficient of described transparent substrates is more than or equal to 10W/mk.
4. COB encapsulated LED light source according to claim 3 is characterized in that, described light-transmissive substrates is Sapphire Substrate or transparent alumina ceramics substrate.
5. COB encapsulated LED light source according to claim 4 is characterized in that, the top in described fluorescent glue vertical section is the convex arcuate structure.
6. COB encapsulated LED light source according to claim 5, it is characterized in that, when adopting positive assembling structure to connect described led chip, the mode that described led chip and described electrode are electrically connected is, adopt conductive lead wire that the electrode of described led chip and the counterpart of electrode are electrically connected, to form electric loop.
7. COB encapsulated LED light source according to claim 6 is characterized in that, the mode that described led chip is arranged on substrate face is that the described led chip back side is bonded in substrate face by crystal-bonding adhesive.
8. COB encapsulated LED light source according to claim 5, it is characterized in that, when adopting inverted structure to connect described led chip, the mode that described led chip and described electrode are electrically connected is, described led chip is welded on electrode part corresponding to substrate face, the counterpart of the electrode of the electrode of described led chip and substrate face is electrically connected, to form electric loop.
9. COB encapsulated LED light source according to claim 5 is characterized in that, this led light source also comprises, is arranged on the fluorescent glue on the substrate side end face.
10. COB encapsulated LED light source according to claim 5 is characterized in that, this led light source also comprises, is arranged on the printing opacity box dam at fluorescent glue edge.
11. the described COB encapsulated LED light source of any one is characterized in that according to claim 1-10, described electrode material is silver, copper or gold.
12. the manufacture method of a COB encapsulated LED light source is characterized in that, comprising:
Cut out slot cut at substrate with the front of substrate;
Form electrode at described substrate with substrate;
Led chip is electrically connected on the described electrode;
With fluorescent glue described led chip is carried out sealing;
Described substrate is cut open along described slot cut with substrate, obtained a plurality of led light sources.
13. the manufacture method of led light source according to claim 12 is characterized in that, described is laser cutting or cutter cutting at substrate with the cutting method that the front of substrate cuts out slot cut.
14. the manufacture method of led light source according to claim 13 is characterized in that, described substrate is silk-screen printing technique with the technique that forms the electrode employing on the substrate.
15. the manufacture method of led light source according to claim 13 is characterized in that, described substrate comprises with the method that forms electrode on the substrate:
Adopt sputter or evaporation process to form metal level in light-transmissive substrates;
Adopt photoetching process to form the photoresist layer with electrode pattern at described layer on surface of metal;
Adopt dry etching or wet corrosion technique, remove the metal layer material that is not covered by described photoresist layer, obtain metal electrode.
16. according to claim 14 or the manufacture method of 15 described led light sources, it is characterized in that, when adopting inverted structure to connect described led chip, the described mode that led chip is electrically connected on the described electrode is, with the electrode welding of the described led chip counterpart to electrode.
17. according to claim 14 or the manufacture method of 15 described led light sources, it is characterized in that, when adopting positive assembling structure to connect described led chip, the described mode that led chip is electrically connected on the described electrode is the electrode of described led chip to be electrically connected to the counterpart of electrode by conductive lead wire.
18. the manufacture method of led light source according to claim 17 is characterized in that, when adopting positive assembling structure to connect described led chip, also comprises: the described led chip back side is bonded in described substrate with on the substrate with crystal-bonding adhesive.
19. the manufacture method of led light source according to claim 12 is characterized in that, describedly with fluorescent glue the process that described led chip carries out sealing is comprised:
Adopt fluorescent glue to cover described led chip surface;
Described led light source is toasted, with the sclerosis fluorescent glue.
20. method according to claim 19 is characterized in that, the process that described employing fluorescent glue is covered described led chip surface is:
Form the box dam with definite shape with substrate at substrate, fluorescent glue is clicked and entered in the described box dam;
Perhaps, described led light source is arranged mould, fluorescent glue is injected described mould.
21. method according to claim 20 is characterized in that, also comprises behind the sclerosis fluorescent glue:
Remove substrate with on-chip described box dam;
Perhaps, remove described mould on the described led light source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013100497611A CN103078049A (en) | 2013-02-07 | 2013-02-07 | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2013100497611A CN103078049A (en) | 2013-02-07 | 2013-02-07 | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103078049A true CN103078049A (en) | 2013-05-01 |
Family
ID=48154517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013100497611A Pending CN103078049A (en) | 2013-02-07 | 2013-02-07 | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103078049A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456866A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inverted LED chip capable of emitting light omni-directionally |
CN103500786A (en) * | 2013-09-29 | 2014-01-08 | 杭州杭科光电股份有限公司 | Full-angle luminous LED (light-emitting diode) light source and preparation method thereof |
CN103531693A (en) * | 2013-09-29 | 2014-01-22 | 杭州杭科光电股份有限公司 | Preparation method for COB (chip on board) area light source with large irritation angle |
CN103579213A (en) * | 2013-11-15 | 2014-02-12 | 唐富生 | Novel COB light source |
CN108538943A (en) * | 2018-06-15 | 2018-09-14 | 广东汉能薄膜太阳能有限公司 | The encapsulating method of solar cell module |
CN110364423A (en) * | 2019-07-19 | 2019-10-22 | 深圳市科米三悠科技有限公司 | A kind of COB display module die-bonding method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101436557A (en) * | 2007-11-13 | 2009-05-20 | 香港科技大学 | Wafer level encapsulation method of LED array encapsulation and LED encapsulation device made thereby |
CN101996984A (en) * | 2009-08-21 | 2011-03-30 | 柏友照明科技股份有限公司 | Light-emitting diode packing structure of forming filling type convex lens and manufacturing method thereof |
CN102082217A (en) * | 2010-12-09 | 2011-06-01 | 深圳市凯信光电有限公司 | Light-emitting diode |
US20110143467A1 (en) * | 2008-08-22 | 2011-06-16 | Lattice Power (Jiangxi) Corporation | Method for fabricating ingaain light emitting device on a combined substrate |
CN102306699A (en) * | 2011-06-22 | 2012-01-04 | 浙江英特来光电科技有限公司 | Integrated light-emitting diode (LED) packaging structure |
WO2012090356A1 (en) * | 2010-12-28 | 2012-07-05 | パナソニック株式会社 | Light-emitting device, light-emitting module, and lamp |
CN102709458A (en) * | 2012-05-21 | 2012-10-03 | 苏州晶品光电科技有限公司 | LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof |
CN203179952U (en) * | 2013-02-07 | 2013-09-04 | 张刚维 | COB packaging LED light source |
-
2013
- 2013-02-07 CN CN2013100497611A patent/CN103078049A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101436557A (en) * | 2007-11-13 | 2009-05-20 | 香港科技大学 | Wafer level encapsulation method of LED array encapsulation and LED encapsulation device made thereby |
US20110143467A1 (en) * | 2008-08-22 | 2011-06-16 | Lattice Power (Jiangxi) Corporation | Method for fabricating ingaain light emitting device on a combined substrate |
CN101996984A (en) * | 2009-08-21 | 2011-03-30 | 柏友照明科技股份有限公司 | Light-emitting diode packing structure of forming filling type convex lens and manufacturing method thereof |
CN102082217A (en) * | 2010-12-09 | 2011-06-01 | 深圳市凯信光电有限公司 | Light-emitting diode |
WO2012090356A1 (en) * | 2010-12-28 | 2012-07-05 | パナソニック株式会社 | Light-emitting device, light-emitting module, and lamp |
CN102306699A (en) * | 2011-06-22 | 2012-01-04 | 浙江英特来光电科技有限公司 | Integrated light-emitting diode (LED) packaging structure |
CN102709458A (en) * | 2012-05-21 | 2012-10-03 | 苏州晶品光电科技有限公司 | LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof |
CN203179952U (en) * | 2013-02-07 | 2013-09-04 | 张刚维 | COB packaging LED light source |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103456866A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inverted LED chip capable of emitting light omni-directionally |
CN103456866B (en) * | 2013-09-05 | 2017-05-17 | 山东晶泰星光电科技有限公司 | Inverted LED chip capable of emitting light omni-directionally |
CN103500786A (en) * | 2013-09-29 | 2014-01-08 | 杭州杭科光电股份有限公司 | Full-angle luminous LED (light-emitting diode) light source and preparation method thereof |
CN103531693A (en) * | 2013-09-29 | 2014-01-22 | 杭州杭科光电股份有限公司 | Preparation method for COB (chip on board) area light source with large irritation angle |
CN103500786B (en) * | 2013-09-29 | 2016-06-08 | 杭州杭科光电股份有限公司 | The LED/light source of a kind of full angle luminescence and its preparation method |
CN103531693B (en) * | 2013-09-29 | 2016-10-05 | 杭州杭科光电股份有限公司 | A kind of preparation method of the COB area light source of big lighting angle |
CN103579213A (en) * | 2013-11-15 | 2014-02-12 | 唐富生 | Novel COB light source |
CN108538943A (en) * | 2018-06-15 | 2018-09-14 | 广东汉能薄膜太阳能有限公司 | The encapsulating method of solar cell module |
CN110364423A (en) * | 2019-07-19 | 2019-10-22 | 深圳市科米三悠科技有限公司 | A kind of COB display module die-bonding method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103078049A (en) | COB (Chip On Board) packaged LED (Light Emitting Diode) light source and manufacturing method | |
US20130039041A1 (en) | Lighting device for direct and indirect lighting | |
WO2014201774A1 (en) | Led bulb lamp capable of emitting lights in all directions | |
JP2012523678A (en) | Power LED heat dissipation substrate, method for manufacturing power LED product, and product by the method | |
US8455275B2 (en) | Method for making light emitting diode package | |
CN103500787A (en) | Ceramic COB (Chip-on-Board) packaged LED (light-emitting diode) light source with bottom capable of being directly soldered on heat sink | |
TWM498387U (en) | Light emitting diode module package structure having thermal-electric separated function and electrical connection module | |
TW201538887A (en) | Lighting-emitting diode assembly and LED bulb using the same | |
CN204088315U (en) | MCOB LED fluorescent powder separate package structure | |
CN203179952U (en) | COB packaging LED light source | |
CN203503708U (en) | Sapphire base LED encapsulation structure | |
CN103545436B (en) | Process for sapphire-based LED encapsulation structure and method for packing thereof | |
CN202534686U (en) | COB packaged LED light source module | |
CN103363357A (en) | LED light source with well heat dissipation effect | |
CN107305922B (en) | preparation method of integrated 360-degree three-dimensional light-emitting source with power supply | |
JP2007335734A (en) | Semiconductor device | |
CN104157637A (en) | MCOB LED package structure | |
US20080042157A1 (en) | Surface mount light emitting diode package | |
KR101757197B1 (en) | Optical Component and Package | |
CN108538997A (en) | Surface attaching type holder and multi-chip photoelectric device | |
TW201403870A (en) | Light emitting diode element and manufacturing mathod thereof | |
TW201429009A (en) | Light emitting diode device and a method for manufacturing heat dissipating substrate | |
CN102544342B (en) | Heat radiator and electrode integrated heat radiating device and manufacturing method thereof | |
CN202678310U (en) | A large-power LED integrated array lighting source based on COB technology | |
CN203453808U (en) | LED light source with good heat dissipation effect |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20170201 |
|
C20 | Patent right or utility model deemed to be abandoned or is abandoned |