CN103187514A - LED (light-emitting diode) package structure - Google Patents
LED (light-emitting diode) package structure Download PDFInfo
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- CN103187514A CN103187514A CN2013101235207A CN201310123520A CN103187514A CN 103187514 A CN103187514 A CN 103187514A CN 2013101235207 A CN2013101235207 A CN 2013101235207A CN 201310123520 A CN201310123520 A CN 201310123520A CN 103187514 A CN103187514 A CN 103187514A
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000004806 packaging method and process Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 16
- 239000000084 colloidal system Substances 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000000843 powder Substances 0.000 abstract description 8
- 239000003292 glue Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000000741 silica gel Substances 0.000 description 18
- 229910002027 silica gel Inorganic materials 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 16
- 239000007787 solid Substances 0.000 description 16
- 241001025261 Neoraja caerulea Species 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 238000009877 rendering Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000062793 Sorghum vulgare Species 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000019713 millet Nutrition 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED (light-emitting diode) package structure which is characterized in that LED chip package is carried out on a transparent LED package substrate; the existing LED packaged reflection-type substrate is replaced by the transparent LED package substrate; and transparent glue bodies or the transparent glue bodies mixed with fluorescent powder are arranged on the front face and the back face of the LED substrate so that a double-face light-emitting light source is formed. According to the LED package structure, the characteristic that the front face and the back face of an LED chip both can emit light is utilized, and the light emitted from the front face and the back face of the LED chip can be efficiently emitted by virtue of the transparent LED package substrate, so that the light-emitting efficiency of the LED packaged light source is greatly improved.
Description
Technical field
The present invention relates to the LED encapsulation field, relate in particular to a kind of Novel LED encapsulating structure.
Background technology
Light-emitting diode (Light Emitting Diode-LED) can directly be converted into luminous energy to electric energy.Led chip is made up of two parts, and a part is P type semiconductor, occupies an leading position in its hole, the inside, and the other end is N type semiconductor, mainly is electronics.When these two kinds of semiconductors couple together, just form one " P-N knot " between them.When electric current acted on this wafer by lead, electronics will be pushed to the P district, and electronics will send energy with the form of photon, the luminous principle of LED that Here it is then with hole-recombination in the P district.
LED is applied to lighting field as a kind of new type light source owing to have characteristics such as energy-saving and environmental protection, life-span length increasingly extensively.Japan's day inferior chemistry has applied for being that the blue-ray LED number of patent application of substrate is respectively: JP19960198585,19960244339, JP19960245381, JP19960359004, JP19970081010 with the Sapphire Substrate the earliest, but the luminous of led chip that with the sapphire is substrate is 360 degree solid angles, and present LED packaged light source all is the single face light source, and this just means that the light that need utilize reflective substrate to be sent by the led chip back side and side is penetrated by the front after the substrate reflection.This will cause greatly light because reflection repeatedly and being absorbed by material causes the whole luminous flux of LED packaged light source to descend, thereby limited the raising of the whole light efficiency of led light source.
Summary of the invention
The present invention is intended to solve the foregoing problems of prior art, and provides a kind of simple in structure, the encapsulating structure of light efficiency height and dependable performance.
The present invention is achieved through the following technical solutions:
A kind of LED encapsulating structure, packaging LED chips on the transparency LED base plate for packaging is characterized in that, described LED packaged light source is the positive and negative double-side.
LED encapsulating structure according to above-mentioned is characterized in that, the light that send at the described led chip back side, and described light transmission transparency LED base plate for packaging directly penetrates described LED encapsulating structure, thereby forms the LED packaged light source of a positive and negative double-side.
According to above-mentioned each LED encapsulating structure, it is characterized in that the visible region transmitance of described transparency LED base plate for packaging in the 380-780nm scope is greater than 50%.
According to above-mentioned each LED encapsulating structure, it is characterized in that described led chip is fixed in one side or the tow sides of transparency LED base plate for packaging.
According to above-mentioned each described LED encapsulating structure, it is characterized in that, for the monochromatic LED encapsulation, fix described led chip at described transparency LED base plate for packaging single face, and seal transparent colloid in the one side of fixed L ED chip.
According to above-mentioned each LED encapsulating structure, it is characterized in that for the white light LEDs encapsulation, the transparent colloid that is mixed with fluorescent material is all sealed on the two sides of described transparency LED base plate for packaging.
According to the present invention, described led chip is more than 1.
According to the present invention, the preparation of the one or both sides of described LED base plate for packaging has conductive electrode.
Particularly, the invention provides a kind of LED encapsulating structure, comprise transparency LED base plate for packaging 10 and the led chip more than 20, randomly, at one side or the tow sides of transparency LED base plate for packaging 10 conductive electrode 30 is set.
According to the present invention, transparent colloid is arranged or be mixed with the transparent colloid 40 of fluorescent material at the one side of transparency LED base plate for packaging 10 or tow sides point.
According to the present invention, described transparency LED base plate for packaging 10 is clear glass, suprasil sheet, sheet of transparent ceramic, perhaps transparent crystal.The visible region of base plate for packaging of the present invention in the 380-780nm scope sees through greater than 50%.Preferably, described transmitance is greater than 70%.
According to the present invention, the one side of described transparency LED base plate for packaging 10 can arrange a pair of or many to conductive electrode, to satisfy the bonding wire requirement of the led chip 20 more than.Also can all be provided with conductive electrode at the tow sides of transparency LED base plate for packaging 10, to satisfy the bonding wire requirement that tow sides carry out two above led chips respectively.
According to the present invention, described led chip is transparent substrates, as Sapphire Substrate, gallium nitride substrate etc., the led chip of last preparation.According to the emission wavelength difference of led chip, the epitaxial material of preparation led chip can be different.As preparing blue light and the green light LED chip adopts gallium nitride-based material usually, preparation gold-tinted and red LED chip be the GaAs based material of employing usually.LED encapsulating structure of the present invention can be realized the light transmission transparency LED base plate for packaging 10 that is sent by led chip 20 back sides and directly penetrate this encapsulating structure after encapsulation is finished, thereby the two-sided equal energy of realizing transparency LED base plate for packaging 10 is luminous.
According to the present invention, monochromatic light or white light encapsulation for this LED encapsulating structure can be chosen in the one side of transparency LED base plate for packaging 10 or solid crystalline substance and the bonding wire that tow sides carry out led chip.For monochromatic light LED encapsulation, if only carry out solid crystalline substance and bonding wire in the one side of transparency LED base plate for packaging 10, then as long as transparent colloid fixedly is being arranged on the millet cake of chip to protect led chip 20.Encapsulate for white light LEDs; no matter be to carry out solid crystalline substance and the bonding wire of led chip 20 or carry out solid crystalline substance and the bonding wire of led chip at the tow sides of transparency LED base plate for packaging 10 respectively in the one side of transparency LED base plate for packaging 10; all need be mixed with the transparent colloid of fluorescent material at the location point of led chip; this is in order to protect led chip on the one hand, be on the other hand for the colour temperature that makes the white light that is sent by these LED encapsulating structure tow sides consistent with chromaticity coordinates.
According to the present invention, for the monochromatic light encapsulation of described LED encapsulating structure, as long as use the led chip of respective wavelength.For the encapsulation of the white light of this LED encapsulating structure, use known blue-light LED chip to add the packaged type that fluorescent material or ultraviolet LED chip add fluorescent material.
According to the present invention, described LED base plate for packaging 10 can be plane, the arbitrary graphic of cross or two above Plane intersects.
The present invention also provides a kind of preparation method of LED encapsulating structure, it is characterized in that, comprises the steps:
(1) led chip 20 is fixed in by transparent colloid 40 on the one side or tow sides of transparency LED substrate 10,
(2) adopt bonding wire craft to be connected to two electrodes of led chip 20 on two electrodes 30 of transparency LED substrate 10 by plain conductor;
(3) by transparent colloid or the transparent colloid 40 that is mixed with fluorescent material with led chip be connected the lead encapsulation.
The present invention utilizes transparent material as the LED base plate for packaging, adopts the LED encapsulating structure of novel double-side simultaneously, makes the light that is sent by the LED back side and side also can see through transparent substrate and ejaculation at an easy rate.Thereby the luminous flux loss of having avoided the repeatedly reflection of light in encapsulating structure to cause has improved about 50% the luminous flux of LED packaged light source and the more existing LED packaged type of light efficiency.
Description of drawings
Fig. 1 is the solid brilliant blue-ray LED encapsulating structure figure of single face
Fig. 2 is two-sided solid brilliant blue-ray LED encapsulating structure figure
Fig. 3 is the solid brilliant White-light LED package structure figure of single face
Fig. 4 is two-sided solid brilliant White-light LED package structure figure
Fig. 5 is cross transparency carrier White-light LED package structure figure
Fig. 6 is the solid brilliant blue-ray LED encapsulating structure test light spectrogram of single face
Fig. 7 is two-sided solid brilliant blue-ray LED encapsulating structure test light spectrogram
Fig. 8 is the solid brilliant high light efficiency White-light LED package structure test light spectrogram of single face
Fig. 9 is two-sided solid brilliant high light efficiency White-light LED package structure test light spectrogram
Figure 10 is the solid brilliant high finger White-light LED package structure test light spectrogram that shows of single face
Figure 11 refers to White-light LED package structure test light spectrogram at two-sided solid brilliant high showing
Figure 12 is cross transparency carrier White-light LED package structure test light spectrogram
Wherein the implication of each Reference numeral is as follows:
10, transparent enclosure substrate (or slide); 20, led chip; 30, electrode; 40, transparent silica gel.
Embodiment
As shown in Figure 1, the blue-light LED chip 20 that is 450nm with a peak wavelength is fixed on the slide 10 by transparent silica gel, and adopts bonding wire craft that two electrodes of blue-light LED chip 20 are connected on two electrodes 30 of slide 10 by plain conductor.At last by transparent silica gel 40 with blue-light LED chip be connected lead and be encapsulated in it.The test condition of this blue-ray LED packaged light source is the 20mA DC driven, and its test result is: radiant flux Φ=35mW, its test light spectrogram as shown in Figure 6,3528 encapsulation of common paster under its radiant flux and the equal conditions have improved 50%.
Embodiment 2
As shown in Figure 2, its encapsulation preparation process is similar to example 1, and its difference is all to have fixed blue-light LED chip 20 and carried out bonding wire and some glue at the tow sides of slide 10.Two blue-light LED chips 20 of this blue-ray LED packaged light source are for being connected in parallel, and its test condition is the 40mA DC driven, and its test result is: radiant flux Φ=68mW, its test light spectrogram as shown in Figure 7.
Embodiment 3
As shown in Figure 3, the blue-light LED chip 20 that a peak wavelength is 450nm is solid brilliant on transparent YAG ceramic substrate 10 by transparent silica gel, and adopt bonding wire craft that two electrodes of blue-light LED chip 20 are connected on two electrodes 30 of transparent YAG ceramic substrate 10 by plain conductor.Simultaneously all put the transparent silica gel 40 of having mixed yellow fluorescent powder at the tow sides of transparent YAG ceramic substrate 10.The mixing ratio of fluorescent material and silica gel is classified 1:12 as.The test condition of this white light LEDs packaged light source is the 20mA DC driven, and its test result is: colour temperature Tc=5744K, color rendering index Ra=64.5, light efficiency η=224lm/W.The spectrogram of its test as shown in Figure 8.
As shown in Figure 4, the blue-light LED chip 20 that is 450nm with two peak wavelengths is fixed in the tow sides of transparent YAG ceramic substrate 10 by transparent silica gel, and adopts bonding wire craft that two electrodes of two blue-light LED chips 20 are connected on the transparent YAG ceramic substrate 10 double-edged electrodes 30 by the plain conductor distribution.Simultaneously all put the transparent silica gel 40 of having mixed yellow fluorescent powder at the tow sides of transparent YAG ceramic substrate 10.The mixing ratio of fluorescent material and silica gel is classified 1:12 as.Two blue-light LED chips of this white light LEDs packaged light source are for being connected in parallel, and its test condition is the 40mA DC driven, and its test result is: colour temperature Tc=5714K, color rendering index Ra=63.3, light efficiency η=213lm/W.The spectrogram of its test as shown in Figure 9.
Embodiment 5
As shown in Figure 3, the blue-light LED chip 20 that is 450nm with a peak wavelength is fixed on the transparent YAG ceramic substrate 10 by transparent silica gel, and adopts bonding wire craft that two electrodes of blue-light LED chip 20 are connected on two electrodes 30 of transparent YAG ceramic substrate 10 by plain conductor.All put at the tow sides of transparent YAG ceramic substrate 10 simultaneously and mixed transparent silica gel 40 green and red fluorescence powder.The mixing ratio of green emitting phosphor, red fluorescence powder and silica gel is classified 9:1:80 as.The test condition of this white light LEDs packaged light source is the 20mA DC driven, and its test result is: colour temperature Tc=5880K, color rendering index Ra=93.9, light efficiency η=156.7lm/W.The spectrogram of its test as shown in figure 10.
Embodiment 6
As shown in Figure 4, the blue-light LED chip 20 that is 450nm with two peak wavelengths is fixed in the tow sides of transparent YAG ceramic substrate 10 by transparent silica gel, and adopts bonding wire craft that two electrodes of two blue-light LED chips 20 are connected on the transparent YAG ceramic substrate 10 double-edged electrodes 30 by the plain conductor distribution.All put at the tow sides of transparent YAG ceramic substrate 10 simultaneously and mixed transparent silica gel 40 green and red fluorescence powder.The mixing ratio of green emitting phosphor, red fluorescence powder and silica gel is classified 9:1:80 as.Two blue-light LED chips of this white light LEDs packaged light source are for being connected in parallel, and its test condition is the 40mA DC driven, and its test result is: colour temperature Tc=5769K, color rendering index Ra=93.2, light efficiency η=139.5lm/W.The spectrogram of its test as shown in figure 11.
Embodiment 7
As shown in Figure 5, the blue-light LED chip 20 that is 450nm with four peak wavelengths is fixed on four axles of the transparent YAG ceramic substrate 10 of cross by transparent silica gel, and adopts bonding wire craft that two electrodes of four blue-light LED chips 20 are connected on the electrode 30 of 10 4 axles of the transparent YAG ceramic substrate of cross by the plain conductor distribution.Simultaneously put the transparent silica gel 40 of having mixed yellow fluorescent powder at each tow sides of the transparent YAG ceramic substrate 10 of cross.The mixing ratio of fluorescent material and silica gel is classified 1:12 as.Four blue-light LED chips of this white light LEDs packaged light source are for being connected in parallel, and its test condition is the 80mA DC driven, and its test result is: colour temperature Tc=5880K, color rendering index Ra=66.5, light efficiency η=198lm/W.The spectrogram of its test as shown in figure 12.
Foregoing is specific embodiments of the invention, and be not limitation of the present invention, any trickle modification, equivalent variations and modification that every foundation technical spirit of the present invention is done top embodiment, material as transparency carrier, shape, arranging and connection in series-parallel relation etc. of chip all still belongs to technology contents of the present invention and scope.
Claims (8)
1. LED encapsulating structure, packaging LED chips on the transparency LED base plate for packaging is characterized in that, described LED packaged light source is the positive and negative double-side.
2. according to the LED encapsulating structure of claim 1, it is characterized in that light is sent at the described led chip back side, described light transmission transparency LED base plate for packaging directly penetrates described LED encapsulating structure, thereby forms the LED packaged light source of a positive and negative double-side.
3. according to the LED encapsulating structure of claim 1 or 2, it is characterized in that the visible region transmitance of described transparency LED base plate for packaging in the 380-780nm scope is greater than 50%.
4. according to each LED encapsulating structure of claim 1-3, it is characterized in that described led chip is fixed in one side or the tow sides of transparency LED base plate for packaging.
5. according to each described LED encapsulating structure of claim 1-4, it is characterized in that, for the monochromatic LED encapsulation, fix described led chip at described transparency LED base plate for packaging single face, and seal transparent colloid in the one side of fixed L ED chip.
6. according to each described LED encapsulating structure of claim 1-5, it is characterized in that for the white light LEDs encapsulation, the transparent colloid that is mixed with fluorescent material is all sealed on the two sides of described transparency LED base plate for packaging.
7. according to each LED encapsulating structure of claim 1-6, it is characterized in that, described encapsulating structure comprises transparency LED base plate for packaging 10 and the led chip more than 20, randomly, at one side or the tow sides of transparency LED base plate for packaging 10 conductive electrode 30 is set.
8. each the preparation method of LED encapsulating structure of a claim 1-7 is characterized in that, comprises the steps:
(1) led chip 20 is fixed in by transparent colloid 40 on the one side or tow sides of transparency LED substrate 10,
(2) adopt bonding wire craft to be connected to two electrodes of led chip 20 on two electrodes 30 of transparency LED substrate 10 by plain conductor;
(3) randomly, by transparent colloid or the transparent colloid 40 that is mixed with fluorescent material with led chip be connected the lead encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101235207A CN103187514A (en) | 2012-09-17 | 2013-04-10 | LED (light-emitting diode) package structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220473988 | 2012-09-17 | ||
| CN201220473988.X | 2012-09-17 | ||
| CN2013101235207A CN103187514A (en) | 2012-09-17 | 2013-04-10 | LED (light-emitting diode) package structure |
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| CN103187514A true CN103187514A (en) | 2013-07-03 |
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| CN2013101235207A Pending CN103187514A (en) | 2012-09-17 | 2013-04-10 | LED (light-emitting diode) package structure |
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| WO (1) | WO2014040412A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103423641A (en) * | 2013-07-23 | 2013-12-04 | 杭州杭科光电股份有限公司 | LED light source module with reflecting light distribution function |
| CN103629575A (en) * | 2013-11-29 | 2014-03-12 | 华南理工大学 | LED lamp with flexible transparent substrate |
| CN103855276A (en) * | 2014-01-02 | 2014-06-11 | 深圳市瑞丰光电子股份有限公司 | LED lamp filament and illumination device |
| CN103996785A (en) * | 2014-06-04 | 2014-08-20 | 宁波亚茂照明电器有限公司 | Built-in drive full-angle light-emitting LED light source and packaging process |
| CN104051603A (en) * | 2014-03-20 | 2014-09-17 | 苏州东山精密制造股份有限公司 | Manufacturing technology of LED lamp strip capable of emitting light from two sides |
| CN104425657A (en) * | 2013-09-11 | 2015-03-18 | 广镓光电股份有限公司 | Light emitting diode assembly and related lighting device |
| CN104701439A (en) * | 2015-03-20 | 2015-06-10 | 陈晓博 | LED lamp and LED lamp assembly |
| WO2015139369A1 (en) * | 2014-03-21 | 2015-09-24 | 苏州东山精密制造股份有限公司 | Led light bar manufacturing method and led light bar |
| CN103855276B (en) * | 2014-01-02 | 2016-11-30 | 深圳市瑞丰光电子股份有限公司 | A kind of LED filament and illuminator |
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| CN104425657A (en) * | 2013-09-11 | 2015-03-18 | 广镓光电股份有限公司 | Light emitting diode assembly and related lighting device |
| CN103629575A (en) * | 2013-11-29 | 2014-03-12 | 华南理工大学 | LED lamp with flexible transparent substrate |
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| CN103855276B (en) * | 2014-01-02 | 2016-11-30 | 深圳市瑞丰光电子股份有限公司 | A kind of LED filament and illuminator |
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| WO2015139369A1 (en) * | 2014-03-21 | 2015-09-24 | 苏州东山精密制造股份有限公司 | Led light bar manufacturing method and led light bar |
| US9905542B2 (en) | 2014-03-21 | 2018-02-27 | Suzhou Dongshan Precision Manufacturing Co., Ltd. | LED light bar manufacturing method and LED light bar |
| CN103996785A (en) * | 2014-06-04 | 2014-08-20 | 宁波亚茂照明电器有限公司 | Built-in drive full-angle light-emitting LED light source and packaging process |
| CN104701439A (en) * | 2015-03-20 | 2015-06-10 | 陈晓博 | LED lamp and LED lamp assembly |
| CN104701439B (en) * | 2015-03-20 | 2017-10-24 | 河北耀博照明电器有限公司 | Led lamp and led lamp component |
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|---|---|
| WO2014040412A1 (en) | 2014-03-20 |
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