CN104851953A - Dimmable LED packaging structure - Google Patents
Dimmable LED packaging structure Download PDFInfo
- Publication number
- CN104851953A CN104851953A CN201410049942.9A CN201410049942A CN104851953A CN 104851953 A CN104851953 A CN 104851953A CN 201410049942 A CN201410049942 A CN 201410049942A CN 104851953 A CN104851953 A CN 104851953A
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- Prior art keywords
- led chip
- fluorescence coating
- dimmable
- area
- chip
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- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 238000000576 coating method Methods 0.000 claims description 97
- 239000011248 coating agent Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 25
- 239000003292 glue Substances 0.000 claims description 23
- 238000013517 stratification Methods 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 4
- 238000005538 encapsulation Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a dimmable LED packaging structure. Through correspondingly superposing a plurality of first fluorescent layers on one part of first-type LED chips, problems of no easy color temperature adjustment and low light mixing uniformity are settled. Furthermore through covering the first fluorescent layer and the other part of first-type LED chips by the second fluorescent layer, a process flow for the LED packaging structure is simplified.
Description
Technical field
The present invention relates to a kind of light-emitting diode (light-emitted diode, LED) structure, particularly relate to a kind of Dimmable LED encapsulating structure.
Background technology
Fig. 1 is existing LED encapsulation structure, described LED encapsulation structure is chip on board (chip-on-board, COB) encapsulating structure, comprise LED chip 102 on substrate 100 of substrate 100, spread configuration and be filled in sidewall 103 to cover the fluorescent glue 104 of LED chip 102, wherein fluorescent glue 104 comprises warm colour temperature (warm color) fluorescent glue 104a and cool colour temperature (cold color) fluorescent glue 104b, and fluorescent glue 104 is made up of fluorescent material.
As shown in Figure 1, the light mixing way of LED encapsulation structure uses the fluorescent material of two kinds of variable concentrations to carry out a glue, such as warm colour temperature fluorescent glue 104a and cool colour temperature fluorescent glue 104b, and after die bond bonding wire completes, the fluorescent glue 104 of different formulations ratio is enclosed in different warm colour temperature areas and cool colour temperature area, to carry out a glue to the LED chip 102 in different-colour region, thus reach different-colour demand.Though the colour temperature of aforesaid way adjustable LED encapsulation structure, but need to use lampshade around fluorescent glue 104, to form mixed light chamber (not shown) in the top of substrate 100, cause expend larger space could mixed light, the problem of the LED chip 102 more easily causing warm colour temperature area and cool colour temperature area not easily uniform mixed light.In addition, warm colour temperature area and cool colour temperature area need use twice technique to carry out warm colour temperature fluorescent glue 104a and cool colour temperature fluorescent glue 104b point glue, make processing step comparatively loaded down with trivial details.
Therefore, need to develop a kind of new-type LED encapsulation structure, to solve the problem that above-mentioned colour temperature not easily adjusts, mixed light is uneven and technique is loaded down with trivial details.
Summary of the invention
One object of the present invention is to provide a kind of Dimmable LED encapsulating structure, overlaps on the first kind LED chip of a part, to solve the problem that above-mentioned colour temperature not easily adjusts and mixed light is uneven by multiple first fluorescence coating is corresponding.
Another object of the present invention is to provide a kind of Dimmable LED encapsulating structure, is covered the first kind LED chip of described first fluorescence coating and another part, to simplify the processing step of LED encapsulation structure by the second fluorescence coating.
For achieving the above object, a preferred embodiment of the present invention provides a kind of Dimmable LED encapsulating structure, and described Dimmable light-emitting diode (LED) encapsulating structure comprises: substrate; Annular sidewall, is arranged on described substrate; Multiple first kind LED chip is arranged on the described substrate within described annular sidewall, and described first kind LED chip is in order to produce irradiation light; Multiple first fluorescence coating is corresponding to be overlapped on the described first kind LED chip of a part; And second fluorescence coating, in order to insert within described annular sidewall, to cover the described first kind LED chip of described first fluorescence coating and another part.Wherein when the described irradiation light that described a part of first kind LED chip produces is corresponding penetrate the first fluorescence coating and described second fluorescence coating described in each time, and when the described irradiation light that described another part first kind LED chip produces is corresponding penetrate described second fluorescence coating time, described irradiation light forms mixed light at the near surface of the surface of described first fluorescence coating and described another part first kind LED chip.
In one embodiment, Dimmable LED encapsulating structure comprises multiple Second Type LED chip further, is arranged on the described substrate within described annular sidewall, to be staggered with described first kind LED chip.
In one embodiment, each first kind LED chip is blue chip, and Second Type LED chip described in each is red light chips.
In one embodiment, the quantity of described blue chip is 1:1 ~ 3:1 with the ratio of the quantity of described red light chips.
In one embodiment, when each first kind LED chip is the LED chip of vertical stratification, the area of each the first fluorescence coating is less than or equal to the area of the LED chip of described vertical stratification.
In one embodiment, when each first kind LED chip is the LED chip of horizontal structure, the area of each the first fluorescence coating is more than or equal to the area of the LED chip of described horizontal structure.
In one embodiment, the area of each the first fluorescence coating is 0.8 times ~ 2 times of the area of each first kind LED chip.
In one embodiment, the first fluorescence coating described in each is warm white fluorescence paster.
In one embodiment, described in each, the bottom surface of the first fluorescence coating comprises a laminating layer, to be attached on the surface of described a part of first kind LED chip by described first fluorescence coating.
In one embodiment, described second fluorescence coating is cold white fluorescent glue.
Dimmable LED encapsulating structure of the present invention, overlaps on the first kind LED chip of a part by multiple first fluorescence coating is corresponding, effectively to adjust colour temperature, reaches the effect of uniform mixed light.And the processing step of LED encapsulation structure is simplified by the second fluorescence coating.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing LED encapsulation structure;
Fig. 2 is the vertical view of LED encapsulation structure in the embodiment of the present invention;
Fig. 3 is the cutaway view along A-A ' line segment in Fig. 2;
Fig. 4 is the distribution schematic diagram of LED encapsulation structure in the embodiment of the present invention;
Fig. 5 is the distribution schematic diagram of LED encapsulation structure in another embodiment of the present invention.
Description of reference numerals:
100 substrates
102 LED chips
103 sidewalls
104 fluorescent glues
104a warm colour temperature fluorescent glue
104b cool colour temperature fluorescent glue
200 substrates
202 annular sidewalls
204 first kind LED chips
206 first fluorescence coatings
207 bright dippings place
208 second fluorescence coatings
210 Second Type LED chips
212 laminating layers
214 irradiation light
400 connecting lines
The area of A1 first kind LED chip
The area of A2 first fluorescence coating.
Embodiment
Dimmable LED encapsulating structure of the present invention utilizes described sidewall to form a die bond region, described die bond region is made up of cold white region and warm white region, wherein cold white region is defined as the blue chip region not attaching warm colour temperature fluorescence paster, and warm white region is defined as the region of the blue chip being pasted with warm colour temperature fluorescence paster.In other words, warm colour temperature fluorescence paster is optionally attached at the blue chip of a part, cold white region and warm white region are intermeshed, to reach the effect of the colour temperature adjusting described LED encapsulation structure, and make cold white region and warm white region mutually between form uniform mixed light.
With reference to the vertical view that figure 2 and Fig. 3, Fig. 2 are LED encapsulation structure in the embodiment of the present invention, Fig. 3 is the cutaway view along A-A ' line segment in Fig. 2.As shown in FIG. 2 and 3, Dimmable light-emitting diode (LED) encapsulating structure comprises substrate 200, annular sidewall 202, multiple first kind LED chip 204, multiple first fluorescence coating 206, second fluorescence coating 208 and laminating layer 212.
Substrate 200 is such as ceramic substrate, has the characteristic that is electrically insulated and is made up of ceramic material, ceramic material as aluminium oxide, aluminium nitride, zirconia and calcirm-fluoride one of them.Annular sidewall 202 is arranged on described substrate 200, in order to around described first kind LED chip 204, makes first kind LED chip 204 and described first fluorescence coating 206 described in described second fluorescence coating 208 uniform fold.Multiple first kind LED chip 204, be arranged on the substrate 200 within described annular sidewall 202, described first kind LED chip 204 is in order to produce irradiation light.In one embodiment, each first kind LED chip 204 is blue chip.
As shown in FIG. 2 and 3, multiple first fluorescence coating 206, correspondingly overlap on the first kind LED chip 204 of a part, in other words, first fluorescence coating 206 is stacked on the upper surface of the first kind LED chip 204 of a part, makes first kind LED chip 204 sequentially overlapping first fluorescence coating 206 and the second fluorescence coating 208.In one embodiment, the bottom surface of each the first fluorescence coating 206 comprises a laminating layer 212, to be attached on the surface of a part of first kind LED chip 204 by the first fluorescence coating 206.Laminating layer 212 is such as the elargol or tin glue that stick together, or signal bronze or gold-tin alloy, and laminating layer 212 also has the effect of heat conduction.
Specifically, in one embodiment, first fluorescence coating 206 is coated on a part of first kind LED chip 204 to provide the fluorescence of warm colour temperature (being such as red), the original light that first kind LED chip 204 can be made to launch converts the irradiation light 214 with suitable colour temperature to, such as ultraviolet light is converted to partially blue visible ray, then partially blue visible ray penetrates the first fluorescence coating 206 of warm colour temperature, produces the light of warm colour temperature.In a preferred embodiment, the first fluorescence coating 206 is the overlapping warm colour temperature fluorescence paster being attached to the first kind LED chip 204 of a part, and described warm colour temperature fluorescence paster is such as red temperature fluorescence paster.
As shown in FIG. 2 and 3, second fluorescence coating 208 is in order to insert within described annular sidewall 202, to cover the first kind LED chip 204 of described first fluorescence coating 206 and another part, and the second fluorescence coating 208 fills up the interval between first kind LED chip 204, described second fluorescence coating 208 provides the fluorescence of cool colour temperature (such as blue), and the second fluorescence coating 208 is such as cool colour temperature fluorescent glue.In addition, in one embodiment, the present invention can insert the cold white fluorescent glue of same concentrations once in the scope of described annular sidewall 202, and the technique of LED encapsulation structure is more simplified.
As shown in Figure 3, when the irradiation light 214 that described a part of first kind LED chip 204 produces is corresponding penetrate each the first fluorescence coating 206 and described second fluorescence coating 208 time, and when the irradiation light 214 that described another part first kind LED chip 204 produces is corresponding penetrate described second fluorescence coating 208 time, described irradiation light 214 forms mixed light at the near surface of the surface of described first fluorescence coating 206 and described another part first kind LED chip 204.
Specifically, a part of first kind LED chip 204 is provided with the first fluorescence coating 206 on the surface, converts the irradiation light that first kind LED chip 204 is formed to warm colour temperature light by described first fluorescence coating 206; Another part first kind LED chip 204 is not provided with the first fluorescence coating 206 from the teeth outwards, and another part first kind LED chip 204 directly produces cool colour temperature irradiation light.Because the irradiation light of two kinds of different-colours is adjacent to each other, and the first kind LED chip 204 being provided with the first fluorescence coating 206 is adjacent to each other with the first kind LED chip 204 not being provided with the first fluorescence coating 206, therefore effectively can adjust colour temperature, to reach the effect of uniform mixed light.
Further, as shown in FIG. 2 and 3, the second fluorescence coating 208 is covered above the first kind LED chip 204 being provided with the first fluorescence coating 206 with the first kind LED chip 204 not being provided with the first fluorescence coating 206, interwoven with the first kind LED chip 204 not being provided with the first fluorescence coating 206 by the first kind LED chip 204 being provided with the first fluorescence coating 206, and coated first fluorescence coating 206 of the second fluorescence coating 208, makes warm colour temperature light and cool colour temperature irradiation light abundant mixed light near bright dipping place 207 of first kind LED chip 204.Namely, there is the effect of adjustment colour temperature and uniform mixed light near each first kind LED chip 204 bright dipping place 207, the first kind LED chip 204 being provided with the first fluorescence coating 206 such as near annular sidewall 202 still can make the abundant mixed light of irradiation light with the first kind LED chip 204 not being provided with the first fluorescence coating 206, and makes the effect that LED encapsulation structure still has uniform colour temperature to adjust in different angles.
Continue with reference to figure 2 and Fig. 3, in one embodiment, when each first kind LED chip 204 is the LED chip of vertical stratification, the area A 2 of each the first fluorescence coating 206 is less than or equal to the area A 1 of the LED chip of described vertical stratification, and two electrodes of the LED chip of vertical stratification are respectively in the both sides of LED epitaxial loayer herein.The LED chip of described vertical stratification is such as that non-transparency carrier is as substrate, so the LED chip of vertical stratification is opaque state, make light luminous from the surface of crystal face, make the side of the LED chip of vertical stratification can not be luminous, therefore the area A 2 of each the first fluorescence coating 206 is less than or equal to the area A 1 of the LED chip of described vertical stratification, in preferred embodiment, the area A 2 of each the first fluorescence coating 206 is 0.8 times ~ 1 times of the area A 1 of the LED chip of each vertical stratification.Herein, in Fig. 2 and Fig. 3, A1 equals A2.
In another embodiment, when each first kind LED chip 204 is the LED chip of horizontal structure, the area A 2 of each the first fluorescence coating 206 is more than or equal to the area A 1 of the LED chip of described horizontal structure, and horizontal structure refers to that two electrodes of LED chip are in the same side of LED chip herein.The LED chip of described horizontal structure is such as that transparency carrier (such as sapphire) is as substrate, the side making the LED chip of horizontal structure also can be luminous, therefore when the area A 2 of each the first fluorescence coating is greater than or equal to the area A 1 of the LED chip of described horizontal structure, to excite more warm colour temperature light.In preferred embodiment, between each horizontal structure refers to that the area A 1 of LED is 1 times to 2 times of the area A 2 of each the first fluorescence coating.Herein, in Fig. 2 and Fig. 3, A1 equals A2.
Therefore, Dimmable light-emitting diode of the present invention (LED) encapsulating structure is applicable to the LED chip of vertical stratification and/or the LED chip of horizontal structure, wherein the area A 2 of each the first fluorescence coating 206 is 0.8 times ~ 2 times of the area A 1 of each LED chip, but be not limited thereto multiple, can be lower multiple or higher multiple.
With reference to figure 4, Figure 4 shows that the distribution schematic diagram of LED encapsulation structure in the embodiment of the present invention.First kind LED chip 204 can comprise sequentially stacking n type semiconductor layer, semiconductor light emitting layer, p type semiconductor layer, such as n type semiconductor layer can be N-type GaN (gallium nitride) layer, semiconductor light emitting layer can comprise gallium nitride or InGaN, p type semiconductor layer can be P type GaN layer, wherein P type GaN layer and N-type GaN layer are connected to positive terminal (+) and the negative pole end (-) of external power source (not shown) respectively by electric connection line 400, thus conducting first kind LED chip 204, that is forward bias, and make semiconductor light emitting layer produce the composite action of electron hole pair to launch irradiation light.
LED encapsulation structure of the present invention also can comprise packaging plastic (not shown), described packaging plastic has high light transmittance and is electrically insulated, and coated annular sidewall 202 and the second fluorescence coating 208, seal overall LED encapsulation structure, packaging plastic can be made up of the material comprising silica gel or epoxy resin.
With reference to the distribution schematic diagram that figure 5, Fig. 5 is LED encapsulation structure in another embodiment of the present invention.Multiple Second Type LED chip 210 is arranged on the substrate 200 within described annular sidewall 202, to be staggered with described first kind LED chip 204.In one embodiment, the Second Type LED chip 210 arranged in die bond region within annular sidewall 202 is red light chips, to improve color rendering index (the color rendering index of LED encapsulation structure, CRI), namely the quantity of red light chips in die bond region and distribution situation thereof is controlled to adjust color rendering index (CRI), to reduce ruddiness optical attenuation effect.In preferred embodiment, the quantity of described blue chip is 1:1 ~ 3:1 with the ratio of the quantity of described red light chips.In other embodiments, the quantity of described blue chip can be arbitrary value with the ratio of the quantity of described red light chips.
In sum, Dimmable LED encapsulating structure of the present invention, overlaps on the first kind LED chip of a part, to solve the problem that above-mentioned colour temperature not easily adjusts and mixed light is uneven by multiple first fluorescence coating is corresponding.And covered first kind LED chip and/or the Second Type LED chip of described first fluorescence coating and another part by the second fluorescence coating, to simplify the processing step of LED encapsulation structure.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (20)
1. a Dimmable LED encapsulating structure, comprising:
One substrate;
One annular sidewall, is arranged on described substrate; Multiple first kind LED chip, be arranged on the described substrate within described annular sidewall, described first kind LED chip is in order to produce irradiation light; Multiple first fluorescence coating, correspondingly overlaps on the described first kind LED chip of a part; And one second fluorescence coating, in order to insert within described annular sidewall, to cover the described first kind LED chip of described first fluorescence coating and another part; It is characterized in that, when the described irradiation light that described a part of first kind LED chip produces is corresponding penetrate the first fluorescence coating and described second fluorescence coating described in each time, and when the described irradiation light that described another part first kind LED chip produces is corresponding penetrate described second fluorescence coating time, described irradiation light forms mixed light at the near surface of the surface of described first fluorescence coating and described another part first kind LED chip.
2. Dimmable LED encapsulating structure according to claim 1, is characterized in that, comprises multiple Second Type LED chip further, is arranged on the described substrate within described annular sidewall, to be staggered with described first kind LED chip.
3. Dimmable LED encapsulating structure according to claim 2, is characterized in that, described in each, first kind LED chip is blue chip, and Second Type LED chip described in each is red light chips.
4. Dimmable LED encapsulating structure according to claim 3, is characterized in that, the quantity of described blue chip is 1:1 ~ 3:1 with the ratio of the quantity of described red light chips.
5. Dimmable LED encapsulating structure according to claim 1, it is characterized in that, when described in each, first kind LED chip is the LED chip of vertical stratification, described in each, the area of the first fluorescence coating is less than or equal to the area of the LED chip of described vertical stratification.
6. Dimmable LED encapsulating structure according to claim 1, it is characterized in that, when described in each, first kind LED chip is the LED chip of horizontal structure, described in each, the area of the first fluorescence coating is more than or equal to the area of the LED chip of described horizontal structure.
7. Dimmable LED encapsulating structure according to claim 1, is characterized in that, the area of the first fluorescence coating described in each is 0.8 times ~ 2 times of the area of first kind LED chip.
8. Dimmable LED encapsulating structure according to claim 1, is characterized in that, the first fluorescence coating described in each is warm colour temperature fluorescence paster.
9. Dimmable LED encapsulating structure according to claim 1, is characterized in that, described in each, the bottom surface of the first fluorescence coating comprises a laminating layer, to be attached on the surface of described a part of first kind LED chip by described first fluorescence coating.
10. Dimmable LED encapsulating structure according to claim 1, is characterized in that, described second fluorescence coating is cool colour temperature fluorescent glue.
11. 1 kinds of Dimmable LED encapsulating structures, comprising: a substrate;
Multiple first kind LED chip, is arranged on described substrate, and described first kind LED chip is in order to produce irradiation light;
Multiple first fluorescence coating, correspondingly overlaps on the described first kind LED chip of a part; And
One second fluorescence coating, is formed on described substrate, to cover the described first kind LED chip of described first fluorescence coating and another part; It is characterized in that,
When the described irradiation light that described a part of first kind LED chip produces is corresponding penetrate the first fluorescence coating and described second fluorescence coating described in each time, and when the described irradiation light that described another part first kind LED chip produces is corresponding penetrate described second fluorescence coating time, described irradiation light forms mixed light at the near surface of the surface of described first fluorescence coating and described another part first kind LED chip.
12. Dimmable LED encapsulating structures according to claim 11, is characterized in that, comprise multiple Second Type LED chip further, are arranged on described substrate, to be staggered with described first kind LED chip.
13. Dimmable LED encapsulating structures according to claim 12, it is characterized in that, described in each, first kind LED chip is blue chip, and Second Type LED chip described in each is red light chips.
14. Dimmable LED encapsulating structures according to claim 13, is characterized in that, the quantity of described blue chip is 1:1 ~ 3:1 with the ratio of the quantity of described red light chips.
15. Dimmable LED encapsulating structures according to claim 11, it is characterized in that, when described in each, first kind LED chip is the LED chip of vertical stratification, described in each, the area of the first fluorescence coating is less than or equal to the area of the LED chip of described vertical stratification.
16. Dimmable LED encapsulating structures according to claim 11, it is characterized in that, when described in each, first kind LED chip is the LED chip of horizontal structure, described in each, the area of the first fluorescence coating is more than or equal to the area of the LED chip of described horizontal structure.
17. Dimmable LED encapsulating structures according to claim 11, is characterized in that, 0.8 times ~ 2 times of the area that the area of the first fluorescence coating described in each is first kind LED chip described in each.
18. Dimmable LED encapsulating structures according to claim 11, is characterized in that, the first fluorescence coating described in each is warm colour temperature fluorescence paster.
19. Dimmable LED encapsulating structures according to claim 11, it is characterized in that, described in each, the bottom surface of the first fluorescence coating comprises a laminating layer, to be attached on the surface of described a part of first kind LED chip by described first fluorescence coating.
20. Dimmable LED encapsulating structures according to claim 11, is characterized in that, described second fluorescence coating is cool colour temperature fluorescent glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410049942.9A CN104851953A (en) | 2014-02-13 | 2014-02-13 | Dimmable LED packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410049942.9A CN104851953A (en) | 2014-02-13 | 2014-02-13 | Dimmable LED packaging structure |
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|---|---|
| CN104851953A true CN104851953A (en) | 2015-08-19 |
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| CN201410049942.9A Pending CN104851953A (en) | 2014-02-13 | 2014-02-13 | Dimmable LED packaging structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058017A (en) * | 2016-06-30 | 2016-10-26 | 宁波升谱光电股份有限公司 | LED assembly with continuous adjustable color temperature and preparation method thereof |
| CN106356439A (en) * | 2016-11-21 | 2017-01-25 | 中山市立体光电科技有限公司 | LED (Light Emitting Diode) packaging structure with adjustable color temperature |
| CN107195758A (en) * | 2017-07-06 | 2017-09-22 | 庞绮琪 | LED chip with high transmission rate |
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| CN102487060A (en) * | 2010-12-02 | 2012-06-06 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode |
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2014
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| TW200935376A (en) * | 2008-02-15 | 2009-08-16 | Foxsemicon Integrated Tech Inc | LED display |
| CN101684933A (en) * | 2008-09-28 | 2010-03-31 | 红蝶科技(深圳)有限公司 | Encapsulation structure and encapsulation method of white light-emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106058017A (en) * | 2016-06-30 | 2016-10-26 | 宁波升谱光电股份有限公司 | LED assembly with continuous adjustable color temperature and preparation method thereof |
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| CN107195758A (en) * | 2017-07-06 | 2017-09-22 | 庞绮琪 | LED chip with high transmission rate |
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Application publication date: 20150819 |