CN204045626U - Chip-packaging structure on the light-emitting diode panel of many races array - Google Patents
Chip-packaging structure on the light-emitting diode panel of many races array Download PDFInfo
- Publication number
- CN204045626U CN204045626U CN201420498486.1U CN201420498486U CN204045626U CN 204045626 U CN204045626 U CN 204045626U CN 201420498486 U CN201420498486 U CN 201420498486U CN 204045626 U CN204045626 U CN 204045626U
- Authority
- CN
- China
- Prior art keywords
- light
- led wafer
- chip
- emitting diode
- lower recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The utility model relates to the encapsulating structure of light-emitting diode.Chip-packaging structure on the light-emitting diode panel that the utility model proposes a kind of many races array, comprise: a mirror-surface aluminum base board, multiple LED wafer, box dam body and fluorescent colloid, it is characterized in that: this mirror-surface aluminum base board has more than one the lower recess district for fixing LED wafer, each lower recess district internal fixtion has a multiple LED wafer, and be just provided with respectively on the substrate closing on this periphery, each lower recess district, negative pole link pad, the LED wafer of each lower recess district internal fixtion is just being welded in its correspondence by spun gold, on negative pole link pad, just often organize closing on, the substrate of negative pole link pad periphery is also respectively equipped with a box dam body, a fluorescent colloid is filled with respectively within each box dam body, and also surface lines layer is provided with on the substrate of the outer circumferential side of this box dam body.The utility model is used for illumination, can realize brightness and Color tunable.
Description
Technical field
The utility model relates to the encapsulating structure of light-emitting diode (LED, Light Emitting Diode), particularly relates to chip on board encapsulation (COB, Chip On Board) structure of LED.
Background technology
Light-emitting diode (hereinafter referred to as LED) chip on board encapsulation (hereinafter referred to as COB) structure is the common encapsulation technology of one of present high-power LED encapsulation structure.The LED wafer of multiple different-colour race can be fixed on a substrate to realize brightness and color tunable light source by existing COB encapsulation.As publication number CN203787420U proposes a kind of array COB light source of convertible connection, it comprises COB substrate, LED chip and packaging plastic, described COB substrate has individual electrode and the leads ends with each Electrode connection, described LED chip is many pads LED chip, described LED chip includes red LED chip, multi-disc blue-light LED chip and multi-disc green LED chip, described multi-disc red LED chip, multi-disc blue-light LED chip and multi-disc green LED chip adopt array to be connected.But it uses identical fluorescent powder packaging glue to encapsulate, thus cause using different LED chips to realize different-colour race, cost is relatively high.
Again, the improvements of existing COB encapsulation are main is all being to improve LED heat dispersion and light extraction efficiency as far as possible.As publication number CN103545438A proposes a kind of high-reflectance COB light-source heat dissipation substrate structure, and for example publication number CN103855036A proposes to know clearly a kind of polycrystalline COB encapsulating structure utilizing mirror-surface aluminum base board.Although prior art has the substrate adopting the mirror-surface aluminum base board as having a high reflectance to encapsulate as COB to improve LED light extraction efficiency, still there is the space of raising.
Utility model content
Therefore, the purpose of this utility model be to propose a kind of there is more high light-emitting efficiency and chip-packaging structure on the light-emitting diode panel of many races array of lower-cost brightness and Color tunable.
The utility model adopts following technical scheme to realize:
Chip-packaging structure on the light-emitting diode panel of a kind of many races array, comprise: a mirror-surface aluminum base board, multiple LED wafer, box dam body and fluorescent colloid, it is characterized in that: this mirror-surface aluminum base board has more than one the lower recess district for fixing LED wafer, each lower recess district internal fixtion has a multiple LED wafer, and be just provided with respectively on the substrate closing on this periphery, each lower recess district, negative pole link pad, the LED wafer of each lower recess district internal fixtion is just being welded in its correspondence by spun gold, on negative pole link pad, just often organize closing on, the substrate of negative pole link pad periphery is also respectively equipped with a box dam body, a fluorescent colloid is filled with respectively within each box dam body, and also surface lines layer is provided with on the substrate of the outer circumferential side of this box dam body.
On the light-emitting diode panel of many races of the present utility model array, chip-packaging structure can adopt identical LED wafer and fill different fluorescent colloid and encapsulate, and can realize many races array light source of brightness and Color tunable, manufacturing cost is lower; In addition, on the light-emitting diode panel of many races of the present utility model array, chip-packaging structure can more high light-emitting efficiency.
Accompanying drawing explanation
Fig. 1 is the front view of the utility model one embodiment;
Fig. 2 is that structural representation is cutd open in the side of this embodiment of the utility model.
Embodiment
Now with embodiment, the utility model is further illustrated by reference to the accompanying drawings.
Consult shown in Fig. 1 and 2, being have 4 colour temperature races to be described for example as chip-packaging structure on the light-emitting diode panel of many races array of the utility model one embodiment, can be other quantity in actual use.On the light-emitting diode panel of many races array of this embodiment, chip-packaging structure comprises: mirror-surface aluminum base board 10, multiple LED wafer 20, box dam body 30 and a fluorescent colloid 40.Wherein, this mirror-surface aluminum base board 10 have four lower recess districts 101 for fixing LED wafer 20, and on the substrate closing on this periphery, each lower recess district 101, be provided with one group of positive and negative electrode link pad 102,103 respectively, the substrate closing on often group positive and negative electrode link pad 102,103 periphery is also provided with a box dam body 30 respectively, be filled with corresponding fluorescent colloid 40 within each box dam body 30, and be also provided with surface lines layer 50 on the substrate of the outer circumferential side of this box dam body 30.The bottom surface of depressed area 101 is all coated with one deck silver coating 601 in each of the lower, this silver coating 601 is fixed with one or more (this embodiment illustrates for multiple series-parallel LED wafer) LED wafer 20 by crystal-bonding adhesive 70, just often organizing, negative pole link pad 102, one deck nickel coating 602 and one deck silver coating 603 is coated with from inside to outside successively respectively on 103, the overall both positive and negative polarity of each lower recess district 101 LED wafer 20 is just being welded in this respectively by gold thread, negative pole link pad 102, on silver coating 603 on 103, also connection in series-parallel is carried out by gold thread between multiple LED wafer 20 as the array distribution in lower recess district 101 each in this embodiment, this surface lines layer 50 is attached with the pure white insulating oil layer of ink 604 of one deck and one deck reflection glue-line 605 from inside to outside successively.
Wherein preferred, this nickel coating 602 is high density nickel coatings.This crystal-bonding adhesive 70 is high heat-conductive solid crystal glue.
Like this, because chip-packaging structure on the light-emitting diode panel of many races array of this embodiment offers multiple lower recess district 101 in a mirror-surface aluminum base board 10, the LED wafer 20(that identical cost is lower can be adopted as blue LED wafers) in each lower recess district 101, and different fluorescent colloids 40 is filled in depressed area 101 in each of the lower, thus make each lower recess district 101 as a luminous race, thus also can realize many races array light source of brightness and Color tunable.Certain, also can be similar in prior art CN203787420U and adopt different LED wafer 20 in different lower recess districts 101, and use identical fluorescent colloid 40 to encapsulate, but cost is relatively high.
The light-emitting diode panel of many races array of this embodiment can be distinguished matched-pair design different electric current, voltage between the multiple luminous race of chip-packaging structure, adjustable different-colour, principle simultaneously in conjunction with mixed light can improve the optical parameters such as color rendering, light source optical angle is made to increase to 160 °, reduce the light loss between chip, improve light extraction efficiency; And grouping controls between many races, reduce the comprehensive thermal resistance of system, improve the directivity of the overall bright dipping of LED component, reduce the loss anaclasis, reduce the use amount of fluorescent material, enhance productivity, reduce the manufacturing cost of encapsulation.
In addition, in mirror-surface aluminum base board, directly the gold-plated mode of pad is linked by traditional turmeric or change gold at positive and negative electrode compared in the COB encapsulation technology that prior art extensively adopts, this embodiment be adopt on the surface of its exposed pads 102,103 the first nickel of high density more silver-plated process form one deck nickel coating 602 and one deck silver coating 603, while not only can improving positive and negative electrode bonding force, the positive and negative electrode link pad 102,103 also making to expose this part there is the light reflecting effect of superelevation.In addition, on surface lines layer, one deck ordinary white ink layer is applied compared to prior art, this embodiment is that the mode from inside to outside successively by brushing and spraying on surface lines layer 50 is attached with the pure white insulating oil layer of ink 604 of one deck and one deck reflection glue-line 605 respectively, considerably increases reflectivity.In addition, the bottom surface in the lower recess district 101 of this embodiment is coated with one deck silver coating 601 and also has very good emissivities in non-die bond part.Thus on the light-emitting diode panel of many races array of this embodiment, chip-packaging structure compares the COB encapsulating structure of existing LED, has more high light-emitting efficiency.In addition, on the light-emitting diode panel of many races array of this embodiment, chip-packaging structure is that high heat-conductive solid crystal glue carries out die bond, can realize thermoelectricity and is separated and has good thermal diffusivity.
Although specifically show in conjunction with preferred embodiment and describe the utility model; but those skilled in the art should be understood that; not departing from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.
Claims (4)
1. chip-packaging structure on the light-emitting diode panel of a Zhong Duo race array, comprise: a mirror-surface aluminum base board, multiple LED wafer, box dam body and fluorescent colloid, it is characterized in that: this mirror-surface aluminum base board has multiple lower recess district for fixing LED wafer, each lower recess district internal fixtion has a multiple LED wafer, and be just provided with respectively on the substrate closing on this periphery, each lower recess district, negative pole link pad, the LED wafer of each lower recess district internal fixtion is just being welded in its correspondence by spun gold, on negative pole link pad, just often organize closing on, the substrate of negative pole link pad periphery is also respectively equipped with a box dam body, a fluorescent colloid is filled with respectively within each box dam body, and also surface lines layer is provided with on the substrate of the outer circumferential side of this box dam body.
2. chip-packaging structure on the light-emitting diode panel of many races according to claim 1 array, is characterized in that: be coated with one deck silver coating in the bottom surface in this lower recess district, this silver coating fixes this LED wafer by crystal-bonding adhesive; The often group positive and negative electrode of depressed area links on pad and is coated with one deck nickel coating and one deck silver coating from inside to outside successively respectively in each of the lower, and the both positive and negative polarity of this LED wafer is welded on the silver coating on this positive and negative electrode link pad by gold thread respectively; This surface lines layer is attached with from inside to outside successively the pure white insulating oil layer of ink of one deck and one deck reflection glue-line.
3. chip-packaging structure on the light-emitting diode panel of many races according to claim 2 array, is characterized in that: this nickel coating is high density nickel coating.
4. chip-packaging structure on the light-emitting diode panel of the many races array according to Claims 2 or 3, is characterized in that: this crystal-bonding adhesive is high heat-conductive solid crystal glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420498486.1U CN204045626U (en) | 2014-09-01 | 2014-09-01 | Chip-packaging structure on the light-emitting diode panel of many races array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420498486.1U CN204045626U (en) | 2014-09-01 | 2014-09-01 | Chip-packaging structure on the light-emitting diode panel of many races array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204045626U true CN204045626U (en) | 2014-12-24 |
Family
ID=52246261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420498486.1U Active CN204045626U (en) | 2014-09-01 | 2014-09-01 | Chip-packaging structure on the light-emitting diode panel of many races array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204045626U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810458A (en) * | 2015-05-04 | 2015-07-29 | 华东师范大学 | COB packaging process for integrating LED distance light and dipped light of automotive headlamp |
| CN105470247A (en) * | 2015-12-31 | 2016-04-06 | 广州市雷腾照明科技有限公司 | Light emitting diode (LED) light source and package method thereof |
| CN106486578A (en) * | 2015-08-26 | 2017-03-08 | 深圳市斯迈得半导体有限公司 | A kind of mirror-surface aluminum base board fluorescent tube |
-
2014
- 2014-09-01 CN CN201420498486.1U patent/CN204045626U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810458A (en) * | 2015-05-04 | 2015-07-29 | 华东师范大学 | COB packaging process for integrating LED distance light and dipped light of automotive headlamp |
| CN104810458B (en) * | 2015-05-04 | 2017-05-17 | 华东师范大学 | COB packaging process for integrating LED distance light and dipped light of automotive headlamp |
| CN106486578A (en) * | 2015-08-26 | 2017-03-08 | 深圳市斯迈得半导体有限公司 | A kind of mirror-surface aluminum base board fluorescent tube |
| CN105470247A (en) * | 2015-12-31 | 2016-04-06 | 广州市雷腾照明科技有限公司 | Light emitting diode (LED) light source and package method thereof |
| CN105470247B (en) * | 2015-12-31 | 2018-06-26 | 广东雷腾智能光电有限公司 | A kind of LED light source and its packaging method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203857313U (en) | LED bulb lamp with high lighting effect | |
| CN203910792U (en) | A single-end power supply omnidirectional LED lamp filament | |
| US8471284B2 (en) | LED package structure and fabrication method thereof | |
| CN102244165A (en) | LED encapsulation process | |
| US8735933B2 (en) | Light emitting diode package and method of manufacturing the same | |
| CN203288644U (en) | Distributed high-voltage LED (Light-Emitting Diode) module group | |
| CN104282676A (en) | Integrated LED lamp panel packaging structure and technology | |
| CN104393145A (en) | Ceramic-substrate-contained white-light LED with low thermal resistance and high brightness | |
| CN204088315U (en) | MCOB LED fluorescent powder separate package structure | |
| CN204045626U (en) | Chip-packaging structure on the light-emitting diode panel of many races array | |
| CN204118067U (en) | Directly be packaged in the LED chip encapsulation architecture of radiator | |
| CN102447049A (en) | LED (light-emitting diode) package structure based on COB (chip on board) package technology and LED illuminator | |
| CN103956359A (en) | Single-ended power supply all-around LED lamp filament and manufacturing method thereof | |
| CN204045633U (en) | Chip-packaging structure on light-emitting diode panel | |
| CN202013881U (en) | Integrated packaging structure with vertically structured LED chips | |
| CN203871360U (en) | COB packaging structure of polishing aluminum substrate | |
| CN104157637A (en) | MCOB LED package structure | |
| CN207883721U (en) | A kind of LED light bar with excellent heat dispersion performance | |
| US20150140701A1 (en) | Method for manufacturing light emitting diode package | |
| CN206353544U (en) | A kind of COB light source | |
| CN104851953A (en) | Dimmable LED packaging structure | |
| CN204189795U (en) | Arc MCOB LED encapsulation structure | |
| CN204045589U (en) | A kind of LED-COB light source | |
| CN103887299A (en) | High-voltage LED light source | |
| CN106960840A (en) | A kind of LED light source of adjustable color temperature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |