CN103887299A - High-voltage LED light source - Google Patents
High-voltage LED light source Download PDFInfo
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- CN103887299A CN103887299A CN201410101652.4A CN201410101652A CN103887299A CN 103887299 A CN103887299 A CN 103887299A CN 201410101652 A CN201410101652 A CN 201410101652A CN 103887299 A CN103887299 A CN 103887299A
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Abstract
The invention discloses a high-voltage LED light source. The high-voltage LED light source comprises a heat conducting shell, an aluminum substrate and a green phosphor layer, wherein the aluminum substrate and the green phosphor layer are installed at the two ends of the heat conducting shell respectively. A plurality of red LED chips and blue LED chips are arranged on the upper surface of the aluminum substrate, and all the LED chips are covered with silica gel. A plurality of corrosion pits are further formed in the upper surface of the aluminum substrate, the side faces of the corrosion pits are inclined, and the included angle alpha between the side face of each corrosion pit and the bottom face of the aluminum substrate is smaller than 45 degrees. A light mixing chamber is formed by the heat conducting shell, the upper surface of the aluminum substrate and the lower surface of the green phosphor layer, red light emitted by the red LED chips and blue light emitted by the blue LED chips are mixed through the light mixing chamber and then emitted to the green phosphor layer, part of the blue light is absorbed by green phosphor to be converted into green light, and the green light and the remaining red light and blue light are combined into white light to be emitted out. The high-voltage LED light source has the advantages of being high in brightness, uniform in outgoing light color, high in luminous efficiency, good in heat dissipation performance and the like.
Description
Technical field
The present invention relates to a kind of high-voltage LED light sources, belong to LED lamp technical field.
Background technology
White light LEDs owing to thering is less energy consumption, that volume is little, the life-span is long etc. is unique, be called as the 4th generation lighting technology, will become in future global topmost lighting system.In recent years, China's LED general illumination market constantly expands, and estimates within 2015, to reach 10,000,000,000 dollars.
Because the voltage of the general civil power of China is 220V, and the driving voltage of single blue chip is generally 3.0-3.5V in the market, and therefore white light LEDs can not directly access civil power.If only by AC-DC conversion, need 60-70 LEDs just can reach the voltage of 220V left and right, owing to adopting a large amount of chip portfolios, chip chamber lacks good integral coordination function, and the comparison of coherence of product is poor, and solder joint is many when encapsulation, and product yield is low.And if use transformer, not only additionally increase cost, and low-voltage LED to reach certain lighting power and need very large electric current, on circuit, can produce so larger heat dissipation, reduced light source whole efficiency, increased heat radiation burden.
High-voltage LED chip, a kind of by the low-power LED integrated high-power LED chip of connecting, adopt high-voltage LED chip can realize easily high voltage, little electric current LED circuit, improve drive efficiency, avoid the problem (Xiao Deyuan that adopts a large amount of small-power chip packages to bring simultaneously, Zhang Rujing, CN102339913A; Wang Zhikang etc., CN102820314A).But, current high-voltage LED white light source is the traditional method for packing of many employings still, utilizes blue led chip to excite yellow fluorescent powder, and the gold-tinted combination that the blue light of being launched by chip and fluorescent material are launched obtains white light, this method is owing to lacking red light composition, and the color rendering index of light is lower.Although add a certain proportion of red fluorescence powder in yellow fluorescent powder, can reach the requirement of different-colour and high color rendering index (CRI), because red fluorescence powder launching efficiency is not high, make the luminous efficiency of this warm white LED lower.
Taiwan wafer company adopts blueness and red high pressure chip hybrid-package in same support, has obtained the warm white LED light source of high color rendering index (CRI).But still there is following problem in this method for packing: fluorescent material is directly coated near chip surface, cause a large amount of photons to be returned chip by reflections from phosphor particles and reuptaked and lose: fluorescent material will produce Stokes effect when the blue light of absorption is converted into gold-tinted, part energy is lost with the form of heat, because fluorescent material is pressed close to chip surface, be unfavorable for chip cooling.
In view of this, the inventor studies this, develops specially a kind of high-voltage LED light sources, and this case produces thus.
Summary of the invention
The object of this invention is to provide a kind of high-voltage LED light sources, have brightness high, go out that light color is even, luminous efficiency is high and the feature such as good heat dissipation.
To achieve these goals, solution of the present invention is:
A kind of high-voltage LED light sources, comprise heat conduction shell, and be arranged on respectively aluminium base and the green phosphor layer at heat conduction shell two ends, wherein, described aluminium base upper surface is provided with several red LED chips and blue-light LED chip, on each LED chip, be all coated with silica gel, each red LED chip and blue-light LED chip interconnect by the wire being laid on aluminium base; The upper surface of aluminium base is further provided with multiple etch pits, and the side of described etch pit is skewed, and the angle α of side and aluminium base bottom surface is less than 45 °; Heat conduction shell, aluminium base upper surface and green phosphor layer lower surface form a light mixing chamber, ruddiness, blue light that red LED chip and blue-light LED chip send incide green phosphor layer after light mixing chamber is mixed, green emitting phosphor absorption portion blue light is also translated into green glow, is combined into white light and penetrates together with remaining red, blue light.
As preferably, described aluminium base is disc, red LED chip and blue-light LED chip are interspersed in proportion at the upper surface of aluminium base, described heat conduction shell is supporting annulus, the base of its lower end is arranged on the edge of aluminium base, the top margin of upper end is connected with the edge of green phosphor layer, and heat conduction shell, aluminium base and green phosphor layer form a bowl-type light mixing chamber.
As preferably, above-mentioned heat conduction shell is the heat conduction shell that aluminum material or ceramic material are made, and its inwall is high reflecting mirror surface.
As preferably, spacing between above-mentioned aluminium base and green phosphor layer is greater than 1/2 of two adjacent LEDs chip minimum spacing, described green phosphor layer is away from aluminium base, form long-range green phosphor layer, greatly reduce the absorption of the photon that LED chip returns to reflections from phosphor particles, can increase substantially light and take out efficiency; Simultaneously, because heat dissipation reduction and fluorescent material and these two thermals source of LED chip scatter, be conducive to reduce LED chip junction temperature, reduce radiator cost.
As preferably, 20 °≤α≤30 ° of angle of above-mentioned etch pit side and aluminium base bottom surface.
As preferably, described green phosphor layer adopts the green phosphor layer being formed by silica gel and green emitting phosphor homogenious charge compression film mode.
As preferably, described green phosphor layer comprises the substrate of being made up of transparent material and is coated in the green emitting phosphor of substrate top surface.
As preferably, described green emitting phosphor is that luminescence peak is the green emitting phosphor of 500 nm-560 nm.
As preferably, above-mentioned red LED chip adopts the high pressure red LED chip that voltage is 20V, and blue-light LED chip adopts the high pressure blue-light LED chip that voltage is 50V.
When the work of above-mentioned high-voltage LED light sources, be encapsulated in the lens that the red LED chip of aluminium base upper surface and light that blue-light LED chip sends form through silica gel, incide in light mixing chamber, through reflection or the refraction of etch pit and heat conduction shell inwall and phosphor powder layer; Part blue light is absorbed by green emitting phosphor, and the green glow of generation forms white light together with remaining blue light and ruddiness, finally sees through green phosphor layer and penetrates.
Compared with prior art, above-mentioned high-voltage LED light sources tool has the following advantages:
1, the corrosion of aluminium base upper surface forms multiple etch pits, described etch pit side has certain angle of inclination, can make green glow that the ruddiness, blue light and the green phosphor layer that reflect from long-range green phosphor layer launch in the larger scattering of aluminium base surface emitting, thereby prevent from above red LED chip and blue-light LED chip, occurring local high light spot, improved color and the brightness uniformity of whole high-voltage LED light sources;
2, apply long-range green phosphor layer, greatly reduced the absorption of the photon that chip returns to reflections from phosphor particles, can increase substantially light and take out efficiency; Simultaneously, because heat dissipation reduction and fluorescent material and these two thermals source of LED scatter, be conducive to reduce junction temperature of chip, reduce radiator cost;
3, high-voltage LED chip direct package is on aluminium base, and packaging cost is low, rapid heat dissipation; Owing to adopting high-voltage LED chip, easily realize high voltage, little electric current LED circuit, improve drive efficiency;
4, the green glow that adopts ruddiness that red high-voltage LED sends, blue light that blue high-voltage LED sends and green emitting phosphor to send mixes composition white light, can obtain the white light source of high color rendering index (CRI), low colour temperature.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the present embodiment high-voltage LED light sources profile;
Fig. 2 is the present embodiment blue led chip and the arranged distribution figure of red LED chips on aluminium base;
Fig. 3 is the sunken luminous effect schematic diagram that the present embodiment etch pit causes excessively suddenly;
Fig. 4 is that the present embodiment blend of colors obtains white-light spectrum schematic diagram;
Fig. 5 is that the present embodiment aluminium base strengthens scattering and light mixing effect schematic diagram;
Fig. 6 is the present embodiment high-voltage LED light sources heat dissipation path figure.
Embodiment
As shown in Figure 1, a kind of high-voltage LED light sources, comprise heat conduction shell 1, aluminium base 2 and green phosphor layer 3, in the present embodiment, described aluminium base 2 is disc, the annulus of described heat conduction shell 1 for matching, the base of heat conduction shell 1 lower end is arranged on the edge of aluminium base 2, and the top margin of upper end is connected with the edge of green phosphor layer 3, and heat conduction shell 1, aluminium base 2 and green phosphor layer 3 form a bowl-type light mixing chamber 7, described light mixing chamber 7 is generally non-tight structure, makes heat radiation more abundant.Described aluminium base 2 upper surfaces are provided with several LED chips 4, and heat conduction shell 1, aluminium base 2 and green phosphor layer 3 also can adopt other shapes, as long as can cooperatively interact at once.
As shown in Figure 2, described aluminium base 2 upper surfaces are provided with 5 20V, 41 and 8 50V of ruddiness high-voltage LED chip of 20mA, 20mA blue light high-voltage LED chip 42, ruddiness high-voltage LED chip 41 and blue light high-voltage LED chip 42 are interspersed in proportion at the upper surface of aluminium base 2, whole high-voltage LED light sources gross power 10W, can form 3 groups of 100V, 20 mA series connection chipsets, adopt 110V constant-current driven chip to drive.Ruddiness high-voltage LED chip 41 and blue light high-voltage LED chip 42 mixed distribution, to improve the uniformity of blend of colors.On above-mentioned each LED chip, be all coated with silica gel 5, described silica gel 5 forms lens, improves light and takes out efficiency.Described aluminium base 2 is selected circular aluminum substrate, and surperficial first depositing insulating layer 21, then erodes away figure, and etch crystal bonding area, plating wiring layer on insulating barrier 21, forms wire 22, and ruddiness high-voltage LED chip 41 is interconnected and is connected with drive circuit with blue light high-voltage LED chip 42.Aluminium base 2 forms multiple etch pits 6 through excessive erosion upper surface, and the side of described etch pit 6 is skewed, and the angle α of side and aluminium base 2 bottom surfaces is less than 45 °, and in the present embodiment, the α of each etch pit 6 is between 20 ° and 30 °.The graphical aluminium base 2 that comprises multiple etch pits 6 can strengthen scattering of light effect, but steep sunken luminous effect, the taking-up efficiency of reduction light of also can producing in etch pit 6 sides.As shown in Figure 3, precipitous when etch pit 6 sides, side and aluminium base 2 plane included angle α are when very large, and the light inciding in etch pit 6 can be at hole inner surface multiple reflections, in this process, light will be absorbed by aluminium base 2 gradually and lose, and cause source light to die down.Therefore etch pit 6 sides and aluminium base 2 plane included angle α should be less than 45o, be advisable with 20o-30o, can make green glow that the ruddiness, blue light and the green phosphor layer 3 that reflect from long-range green phosphor layer 3 launch in the larger scattering of aluminium base 2 surface emitting, thereby prevent from occurring local high light spot above ruddiness high-voltage LED chip 41 and blue light high-voltage LED chip 42, improved color and the brightness uniformity of whole high-voltage LED light sources.
In the present embodiment, the heat conduction shell that above-mentioned heat conduction shell 2 is made for aluminum material, its inwall is high reflecting mirror surface.Spacing between above-mentioned aluminium base 2 and green phosphor layer 3 is greater than 1/2 of two adjacent LEDs chip 4 minimum spacings, makes green phosphor layer 3 away from LED chip 4, forms long-range green phosphor layer.Application in the high-voltage LED light sources that long-range green phosphor layer 3 is narrated in the present invention, can increase substantially light and take out efficiency, reduces heat dissipation point source of heat release, is conducive to reduce junction temperature, reduces radiator cost.
In the present embodiment, described green phosphor layer 3 forms in press mold mode after evenly being mixed by silica gel and green emitting phosphor.Its edge is directly connected with heat conduction shell 2 tops; Described green emitting phosphor is that luminescence peak is the green emitting phosphor of 500 nm-560 nm.Described green phosphor layer 3 also can adopt green emitting phosphor to be directly coated in the substrate top surface of being made up of transparent material.
As shown in Fig. 4-5, when above-mentioned high-voltage LED light sources work, be encapsulated in the lens that the ruddiness high-voltage LED chip 41 of aluminium base 2 upper surfaces and Red and blue light that blue light high-voltage LED chip 42 sends form through silica gel 5, incide in light mixing chamber 7, through multiple reflections, the refraction of etch pit 6 and heat conduction shell 1 inwall and green phosphor layer 3; Part blue light is absorbed by green emitting phosphor, and the green glow of generation forms the white light of high colour developing, low colour temperature together with remaining blue light and ruddiness, finally sees through green phosphor layer and penetrates.
Figure 6 shows that high-voltage LED light sources heat dissipation path figure, in the present invention, the Remote configuration of green phosphor layer 3 can largely improve light and take out efficiency, reduces heat dissipation point source of heat release; Because ruddiness high-voltage LED chip 41 and the direct die bond of blue light high-voltage LED chip 42 are on aluminium base 2, reduce thermal resistance, the heat that described LED chip the produces aluminium base 2 that can lead rapidly, and scatter towards periphery by aluminium base 2.In addition, in graphical aluminium base 2 of the present invention, the insulating barrier of weak heat-dissipating is removed, and increased radiating surface, opened substrate heat dissipation channel upwards in conjunction with remote fluorescence technology, when good with extraneous convection current in light mixing chamber 7, have good radiating effect.
Above-described embodiment and graphic and non-limiting product form of the present invention and style, suitable variation or modification that any person of an ordinary skill in the technical field does it, all should be considered as not departing from patent category of the present invention.
Claims (9)
1. a high-voltage LED light sources, it is characterized in that: comprise heat conduction shell, and be arranged on respectively aluminium base and the green phosphor layer at heat conduction shell two ends, wherein, described aluminium base upper surface is provided with several red LED chips and blue-light LED chip, on each LED chip, be all coated with silica gel, described red LED chip and blue-light LED chip interconnect by the wire being laid on aluminium base; The upper surface of aluminium base is further provided with multiple etch pits, and the side of described etch pit is skewed, and the angle α of side and aluminium base bottom surface is less than 45 °; Heat conduction shell, aluminium base upper surface and green phosphor layer lower surface form a light mixing chamber, red, blue light that red LED chip and blue-light LED chip send incide green phosphor layer after light mixing chamber is mixed, green emitting phosphor absorption portion blue light is also translated into green glow, is combined into white light and penetrates together with remaining red, blue light.
2. a kind of high-voltage LED light sources as claimed in claim 1, it is characterized in that: described aluminium base is disc, red LED chip and blue-light LED chip are interspersed in proportion at the upper surface of aluminium base, described heat conduction shell is supporting annulus, the base of its lower end is arranged on the edge of aluminium base, the top margin of upper end is connected with the edge of green phosphor layer, and heat conduction shell, aluminium base and green phosphor layer form a bowl-type light mixing chamber.
3. a kind of high-voltage LED light sources as claimed in claim 1, is characterized in that: above-mentioned heat conduction shell is the heat conduction shell that aluminum material or ceramic material are made, and its inwall is high reflecting mirror surface.
4. a kind of high-voltage LED light sources as claimed in claim 1, is characterized in that: the spacing between above-mentioned aluminium base and green phosphor layer is greater than 1/2 of two adjacent LEDs chip minimum spacing.
5. a kind of high-voltage LED light sources as claimed in claim 1, is characterized in that: 20 °≤α≤30 ° of angle of above-mentioned etch pit side and aluminium base bottom surface.
6. a kind of high-voltage LED light sources as claimed in claim 1, is characterized in that: described green phosphor layer adopts the green phosphor layer being formed by silica gel and green emitting phosphor homogenious charge compression film mode.
7. a kind of high-voltage LED light sources as claimed in claim 1, is characterized in that: described green phosphor layer comprises the substrate of being made up of transparent material and is coated in the green emitting phosphor of substrate top surface.
8. a kind of high-voltage LED light sources as described in claim 6 or 7, is characterized in that: described green emitting phosphor is that luminescence peak is the green emitting phosphor of 500 nm-560 nm.
9. a kind of high-voltage LED light sources as claimed in claim 1, is characterized in that: above-mentioned red LED chip adopts the high pressure red LED chip that voltage is 20V, and blue-light LED chip adopts the high pressure blue-light LED chip that voltage is 50V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101652.4A CN103887299A (en) | 2014-03-19 | 2014-03-19 | High-voltage LED light source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410101652.4A CN103887299A (en) | 2014-03-19 | 2014-03-19 | High-voltage LED light source |
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| CN103887299A true CN103887299A (en) | 2014-06-25 |
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Cited By (3)
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| CN105355760A (en) * | 2014-11-11 | 2016-02-24 | 易美芯光（北京）科技有限公司 | Light emitting diode (LED) device characterized by wide color gamut display |
| CN109164632A (en) * | 2018-08-31 | 2019-01-08 | 华南师范大学 | A kind of high colour gamut LCD backlight mould group and preparation method thereof |
| CN111900611A (en) * | 2020-06-30 | 2020-11-06 | 深圳市聚飞光电股份有限公司 | Vertical cavity surface emitting laser chip packaging structure and laser emitting device |
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