CN208256718U - A kind of encapsulating structure of LED - Google Patents
A kind of encapsulating structure of LED Download PDFInfo
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- CN208256718U CN208256718U CN201721624637.3U CN201721624637U CN208256718U CN 208256718 U CN208256718 U CN 208256718U CN 201721624637 U CN201721624637 U CN 201721624637U CN 208256718 U CN208256718 U CN 208256718U
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Abstract
The utility model relates to the encapsulating structure of LED a kind of, which includes: heat-radiating substrate 101；Blue-ray light die chip is located at 101 upper surface of heat-radiating substrate；First semispherical silicon glue lens 102 are alternatively arranged in the blue-ray light die chip and 101 upper surface of the heat-radiating substrate；Lower layer's silica gel 103 is located at the blue-ray light die chip and 102 upper surface of the first semispherical silicon glue lens；Second semispherical silicon glue lens 104 are alternatively arranged in 103 upper surface of lower layer's silica gel；Upper layer silica gel 105 is located at lower layer's silica gel 103 and 104 upper surface of the second semispherical silicon glue lens.The LED encapsulation structure of the utility model increases the heat dissipation effect of LED by using the iron heat-radiating substrate with oblique through hole structure, it can guarantee that LED chip can preferably shine out through encapsulating material using two layers of semispherical silicon glue lens structure, improve the transmissivity of light.
Description
Technical field
The utility model relates to LED encapsulation technology fields, more particularly to the encapsulating structure of LED a kind of.
Background technique
There is first LED light emitting diode in the market and achieve and draw by the course of decades in 20 middle of century
People advises purpose rapid progress.Its luminous efficiency has reached the level of heat radiation light source, and light intensity reaches candle light grade, radiates various colors,
The especially birth of white light LEDs, application of the LED product in lighting area, it has also become the new product of great influence.
LED is be combined with each other and gives off energy using the electrons and holes in semiconductor material, so that energy band position rank
Change, the energy that it is released with luminescence display.LED is with small in size, the service life is long, driving voltage is low, power consumption is low, reaction
The advantages that rate is fast, vibration strength is good is widely used in the fields such as signal designation, digital-scroll technique.With the continuous progress of technology,
The development of ultra-bright LED has obtained succeeding in developing for success, especially white light LEDs, so that it is increasingly being used in color lamp dress
Decorations, even lighting area.In recent years, LED mostly uses greatly ultraviolet lamp core to add blue colour fluorescent powder, red fluorescence powder and green emitting phosphor
Mode generate white light, to realize illumination, which had the following problems.
Firstly, foreign study personnel have found that the light scattering characteristic of fluorescent powder makes significant component of forward entrance light meeting
By back scattering.In current high-power LED encapsulation structure, fluorescent powder is usually to be applied directly to chip surface.Due to chip
For the light of back scattering, there are absorptions, and therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation,
In addition, the high temperature that chip generates can be such that the quantum efficiency of fluorescent powder is remarkably decreased, to seriously affect the luminous efficiency of encapsulation.
Secondly, the light that LED light source issues generally is distributed in divergence expression, causes light source brightness of illumination not enough to be concentrated, generally require by outer
Portion's lens carry out secondary reshaping, to adapt to the lighting demand of specific occasion, therefore increase production cost.Again, due to big function
Rate LED is for occasions such as illuminations, and cost control is particularly significant, and the structure size of high-powered LED lamp external heat sink does not also permit
Xu Tai great, unlikely allows to be powered on the modes active heat removal such as fan, the safe junction temperature of LED chip work should within 110 DEG C,
If junction temperature is excessively high, it will lead to that light intensity reduction, spectral shift, colour temperature increases, thermal stress increases, chip accelerated ageing etc. is a series of
Problem greatly reduces the service life of LED, at the same time it can also the encapsulation micelle colloid accelerated ageing for causing chip top filling,
Influence its light transmission efficiency.Currently, chip majority is packaged on thin heat dissipation metal substrate, since heat dissipation metal substrate is relatively thin, warm
Appearance is smaller, and is easily deformed, it is caused to contact defective tightness with cooling fin bottom surface and influence heat dissipation effect.Finally, LED is inputted
Only the energy of some is converted into luminous energy in power, remaining energy is then converted into thermal energy, so for LED chip, especially
It is the very big LED chip of power density, how controls its energy, is LED manufacture and the major issue that lamps and lanterns should focus on solving.
Utility model content
Therefore, to solve technological deficiency and deficiency of the existing technology, the utility model proposes a kind of LED encapsulation
Encapsulating structure.
Specifically, a kind of encapsulating structure for LED that the utility model one embodiment proposes, comprising:
Heat-radiating substrate 101；
Blue-ray light die chip is located at 101 upper surface of heat-radiating substrate；
First semispherical silicon glue lens 102 are arranged in the blue-ray light die chip and 101 upper surface interval of the heat-radiating substrate
Column；
Lower layer's silica gel 103 is located at the blue-ray light die chip and 102 upper surface of the first semispherical silicon glue lens；
Second semispherical silicon glue lens 104 are alternatively arranged in 103 upper surface of lower layer's silica gel；
Upper layer silica gel 105 is located at lower layer's silica gel 103 and 104 upper surface of the second semispherical silicon glue lens.
In one embodiment of the utility model, the material of the heat-radiating substrate 101 is iron, with a thickness of 0.5~10mm.
In one embodiment of the utility model, circular through hole is provided in the heat-radiating substrate 101, it is described round logical
Hole is arranged along 101 width direction of heat-radiating substrate, and with 101 plane of heat-radiating substrate at 1~10 ° of angle；Wherein,
The diameter of the circular through hole is 0.1~0.3mm, and the spacing between the circular through hole is 0.5~10mm.
In one embodiment of the utility model, the second semispherical silicon glue lens 104 and the upper layer silica gel 105
Contain yellow fluorescent powder.
In one embodiment of the utility model, the diameter of the first semispherical silicon glue lens 102 is 10~200 μ
M, the spacing between the first semispherical silicon glue lens 102 are 10~200 μm.
In one embodiment of the utility model, the diameter of the second semispherical silicon glue lens 104 is 10~200 μ
M, the spacing between the second semispherical silicon glue lens 104 are 10~200 μm.
The utility model embodiment has following advantage:
1, it is iron heat-radiating substrate that the heat-radiating substrate in LED encapsulation structure, which uses, and iron heat-radiating substrate has thermal capacitance big, thermally conductive
Effect is good, it is not easy to deform, close feature is contacted with radiator, improve the heat dissipation effect of LED encapsulation structure；And
The embodiments of the present invention make LED in its intensity by the way that oblique through hole is arranged inside the iron heat-radiating substrate in LED encapsulation structure
While having almost no change, manufacturing cost is reduced, and in the way of intermediate oblique through hole, air circulation can be increased
Channel is promoted the thermal convection rate of air using stack effect, improves the heat dissipation effect of LED.
2, the fluorescent powder in LED encapsulation structure takes the form separated with LED chip, solves and draws under the high temperature conditions
The problem of quantum efficiency decline of the fluorescent powder risen.
3, the content for covering the yellow fluorescent powder of silica gel by changing upper layer, the color sending that can continuously adjust light are white
Light can also adjust the colour temperature of light source furthermore with yellow fluorescent powder.
4, the feature different with phosphor gel refractive index using variety classes silica gel forms lens in silica gel, improves LED
The problem of chip light emitting disperses, the light for enabling light source to issue more are concentrated；By changing the semispherical silicon in LED encapsulation structure
The arrangement mode of glue lens, it is ensured that the light of light source is uniformly distributed in concentration zones, such as the arrangement side of semispherical silicon glue lens
Formula is in rectangle or diamond array.
5, hemispherical lens is arranged in LED encapsulation structure can change the direction of propagation of light, effectively inhibit total reflection effect
It answers, is conducive to increase the external quantum efficiency of LED component outside more light emittings to LED, improve the luminous efficiency of LED.
Through the following detailed description with reference to the accompanying drawings, the other aspects and feature of the utility model become obvious.But it answers
When knowing, which is only the purpose design explained, not as the restriction of the scope of the utility model, this is because its
It should refer to appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they are only
Try hard to conceptually illustrate structure and process described herein.
Detailed description of the invention
Below in conjunction with attached drawing, specific embodiment of the present utility model is described in detail.
Fig. 1 is a kind of LED encapsulation structure diagrammatic cross-section provided by the embodiment of the utility model；
Fig. 2 is a kind of LED encapsulation method flow diagram provided by the embodiment of the utility model；
Fig. 3 is another LED encapsulation structure diagrammatic cross-section provided by the embodiment of the utility model；
Fig. 4 is a kind of heat-radiating substrate diagrammatic cross-section provided by the embodiment of the utility model；
Fig. 5 is a kind of blue-ray light die chip diagrammatic cross-section provided by the embodiment of the utility model；
A kind of Fig. 6 a semispherical silicon glue lens diagrammatic cross-section provided by the embodiment of the utility model；
Fig. 6 b is another semispherical silicon glue lens diagrammatic cross-section provided by the embodiment of the utility model.
Specific embodiment
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing to this
The specific embodiment of utility model is described in detail.
Embodiment one
Referring to Figure 1, Fig. 1 is a kind of LED encapsulation structure diagrammatic cross-section provided by the embodiment of the utility model.The encapsulation
Structure includes:
Heat-radiating substrate 101；
Blue-ray light die chip is located at 101 upper surface of heat-radiating substrate；
First semispherical silicon glue lens 102 are arranged in the blue-ray light die chip and 101 upper surface interval of the heat-radiating substrate
Column；
Lower layer's silica gel 103 is located at the blue-ray light die chip and 102 upper surface of the first semispherical silicon glue lens；
Second semispherical silicon glue lens 104 are alternatively arranged in 103 upper surface of lower layer's silica gel；
Upper layer silica gel 105 is located at lower layer's silica gel 103 and 104 upper surface of the second semispherical silicon glue lens.
Further, the material of the heat-radiating substrate 101 is iron, with a thickness of 0.5~10mm.
Further, it is provided with circular through hole in the heat-radiating substrate 101, the circular through hole is along the heat-radiating substrate
The arrangement of 101 width directions, and with the heat-radiating substrate plane at the angle of 1~10o；Wherein, the diameter of the circular through hole is
0.1~0.3mm, the spacing between the circular through hole are 0.5~10mm.
Further, the second semispherical silicon glue lens 104 and the upper layer silica gel 105 contain yellow fluorescent powder.
Further, the diameter of the first semispherical silicon glue lens 102 is 10~200 μm, first semispherical silicon
Spacing between glue lens 102 is 10~200 μm.
Further, the diameter of the second semispherical silicon glue lens 104 is 10~200 μm, second semispherical silicon
Spacing between glue lens 104 is 10~200 μm.
The beneficial effects of the utility model specifically:
It is iron heat-radiating substrate that heat-radiating substrate in 1.LED encapsulating structure, which uses, and iron heat-radiating substrate has thermal capacitance big, thermally conductive
Effect is good, it is not easy to deform, close feature is contacted with radiator, improve the heat dissipation effect of LED encapsulation structure；And
The embodiments of the present invention make LED in its intensity by the way that oblique through hole is arranged inside the iron heat-radiating substrate in LED encapsulation structure
While having almost no change, manufacturing cost is reduced, and in the way of intermediate oblique through hole, air circulation can be increased
Channel takes full advantage of the thermal convection between air, improves the heat dissipation effect of LED.
Fluorescent powder in 2.LED encapsulating structure takes the form separated with LED chip, solves and draws under the high temperature conditions
The problem of quantum efficiency decline of the fluorescent powder risen.
It, can be with 3. the color that can continuously adjust light becomes white light by the content for changing yellow fluorescent powder in silica gel
Adjust the colour temperature of light source.
4. forming lens in silica gel using the variety classes silica gel feature different with phosphor gel refractive index, improve LED
The problem of chip light emitting disperses, the light for enabling light source to issue more are concentrated；By changing the semispherical silicon in LED encapsulation structure
The arrangement mode of glue lens, it is ensured that the light of light source is uniformly distributed in concentration zones, such as the arrangement side of semispherical silicon glue lens
Formula is in rectangle or diamond array.
Embodiment two
Fig. 2 is referred to, Fig. 2 is a kind of LED encapsulation method flow diagram provided by the embodiment of the utility model.Above-mentioned
On the basis of embodiment, the present embodiment will be in more detail introduced the process flow of the utility model.This method comprises:
The preparation of S1, heat-radiating substrate；
S11, the preparation of bracket/heat-radiating substrate；
Specifically, it chooses with a thickness of 0.5~10mm, material is the heat-radiating substrate 101 of iron, cuts heat-radiating substrate 101；
S12, the cleaning of bracket/heat-radiating substrate；
Specifically, the spot above heat-radiating substrate 101 and bracket, especially grease stain are cleaned up；
S13, the baking of bracket/heat-radiating substrate；
Specifically, heat-radiating substrate 101 and bracket that baking cleaning is completed, keep the drying of heat-radiating substrate 101 and bracket.
Preferably, have inside heat-radiating substrate 101 in the width direction and in a certain angle with 101 plane of heat-radiating substrate
Circular through hole；Wherein, the quantity of circular through hole is n and n >=2, diameter are 0.1~0.3mm, circular through hole and heat-radiating substrate 101
The angle of plane is 1~10 °, 0.5~10mm of spacing between circular through hole.
Preferably, the circular through hole in heat-radiating substrate 101 is through direct casting technique or on heat-radiating substrate 101 along width
It directly slots to be formed in degree direction.
S2, chip welding；
S21, will be on solder printing to blue-ray light die chip；
S22, the blue-ray light die chip for being printed with solder is subjected to die bond inspection；
S23, blue-ray light die chip is welded to 101 top of heat-radiating substrate using Reflow Soldering welding procedure.
The preparation of S3, phosphor gel；
S31, configuration phosphor gel；
Specifically, yellow fluorescent powder is configured, the second layer of silica gel of yellow fluorescent powder and third layer of silica gel are mixed；
S32, color measurement is carried out to mixed second layer of silica gel and third layer of silica gel；
S33, the third layer of silica gel of color measurement qualification is toasted.
Preferably, the adoptable material of yellow fluorescent powder is (YGd)3(Al,Ga)5O12:Ce、 (Ca,Sr,Ba)2SiO4:
Eu、AESi2O2N2: Eu or M- α-SiAlON:Eu, the wave-length coverage of yellow fluorescent powder are 570nm~620nm.
The preparation of S4, the first semispherical silicon glue lens 102；
S41, the first layer of silica gel is coated on the heat-radiating substrate 101 for being provided with blue chip, be arranged in the first layer of silica gel
First hemispherical forms the first hemispherical with hemispherical shape using the first hemispherical in the first layer of silica gel
Silica gel；
S42, baking are provided with the first hemispherical silica gel of the first hemispherical, and baking temperature is 90~125 DEG C, dry
The roasting time is 15~60min, makes the first semispherical silicon adhesive curing；
S43, after the bake out is complete removes the first hemispherical being arranged in the first layer of silica gel, completes first
The preparation of semispherical silicon glue lens 102.
Preferably, the first semispherical silicon glue lens 102 are free of fluorescent powder；
The preparation of S5, lower layer's silica gel 103；
Specifically, lower layer's silica gel 103 is coated on the first semispherical silicon glue lens 102, completes the system of lower layer's silica gel 103
It is standby.
Preferably, lower layer's silica gel 103 is free of fluorescent powder；
The preparation of S6, the second semispherical silicon glue lens 104；
S61, the second layer of silica gel is coated in the upper surface of lower layer's silica gel 103, the second hemispherical is set in the second layer of silica gel
Mold forms the second hemispherical silica gel with hemispherical shape using the second hemispherical in the second layer of silica gel；
S62, baking are provided with the second hemispherical silica gel of the second hemispherical, and baking temperature is 90~125 DEG C, dry
The roasting time is 15~60min, makes the second semispherical silicon adhesive curing；
After S63, baking are completed, the second hemispherical being arranged in the second layer of silica gel is removed, completes the second half
The preparation of spherical silica gel lens 104.
Preferably, the second semispherical silicon glue lens 104 contain yellow fluorescent powder；
The preparation of S7, upper layer silica gel 105；
S71, third layer of silica gel is coated on the second semispherical silicon glue lens 104；
S72, third hemispherical is set in third layer of silica gel, using third hemispherical in third layer of silica gel
Form the third hemispherical silica gel with hemispherical shape；
S73, baking are provided with the third hemispherical silica gel of third hemispherical, and baking temperature is 90~125 DEG C, dry
The roasting time is 15~60min, makes third semispherical silicon adhesive curing；
After S74, baking are completed, the third hemispherical being arranged in third layer of silica gel is removed, completes upper layer of silicon
The preparation of glue 105.
Preferably, upper layer silica gel 105 contains yellow fluorescent powder, is contained by changing yellow fluorescent powder in upper layer silica gel 105
Amount, can continuously adjust the colour temperature of light.
S8, length are roasting；
Specifically, whole baking heat-radiating substrate 101, blue-ray light die chip, the first semispherical silicon glue lens 102, lower layer's silicon
Glue 103, the second semispherical silicon glue lens 104 and upper layer silica gel 105, baking temperature be 100~150 DEG C, baking time be 4~
12h completes the encapsulation of LED；
The LED that S9, test, go-no-go encapsulation are completed.
The LED encapsulation structure of S10, Package Testing qualification.
According to the method for the present embodiment, can prepare to form the LED encapsulation structure with multilayer semispherical silicon glue lens, for
It should not be construed as newly using the LED encapsulation structure with multilayer semispherical silicon glue lens prepared by the utility model preparation method
Utility model create.
Embodiment three
It is another kind provided by the embodiment of the utility model please also refer to Fig. 3, Fig. 4, Fig. 5 and Fig. 6 a~Fig. 6 b, Fig. 3
LED encapsulation structure diagrammatic cross-section, Fig. 4 are a kind of heat-radiating substrate diagrammatic cross-section provided by the embodiment of the utility model, and Fig. 5 is
A kind of blue-ray light die chip diagrammatic cross-section provided by the embodiment of the utility model, Fig. 6 a provided by the embodiment of the utility model one
Kind semispherical silicon glue lens diagrammatic cross-section, Fig. 6 b are that another semispherical silicon glue lens provided by the embodiment of the utility model cut open
Face schematic diagram.On the basis of the above embodiments, the LED encapsulation structure of utility model will be introduced in the present embodiment, the LED
Encapsulating structure, comprising:
Heat-radiating substrate 101；
Wherein, as shown in figure 4, the material of heat-radiating substrate 101 is iron, the thickness D of heat-radiating substrate 101 is 0.5~10mm,
Circular through hole is provided in heat-radiating substrate 101, circular through hole arranges in the width direction inside heat-radiating substrate 101, and with dissipate
101 plane of hot substrate circular through hole in a certain angle；Wherein, the quantity of circular through hole is n and n >=2, diameter (radius R) are
The angle of 0.1~0.3mm, circular through hole and 101 plane of heat-radiating substrate are 1~10 °, the spacing A between circular through hole is 0.5~
10mm。
Blue-ray light die chip is formed in 101 upper surface of heat-radiating substrate；
Wherein, as shown in figure 5, blue-ray light die chip structure includes: substrate material 201, on substrate material 201
GaN buffer layer 202, the GaN layer 203 on GaN buffer layer 202, the p-type GaN Quantum Well wide bandgap layer in position GaN layer 203
204, the InGaN layer 205 in p-type GaN Quantum Well wide bandgap layer 204, the p-type GaN Quantum Well in InGaN layer 205
Wide bandgap layer 206, the barrier layer AlGaN 207 in p-type GaN Quantum Well wide bandgap layer 206 are located at the barrier layer AlGaN 207
On p-type GaN layer 208, the anode electrode 209 in p-type GaN layer 208 and the cathode electrode 210 in GaN layer 203.
First semispherical silicon glue lens 102 are formed in heat-radiating substrate 101 and blue-ray light die chip upper surface；
Wherein, the diameter of the first semispherical silicon glue lens 102 is 10~200 μm, between the first semispherical silicon glue lens 102
Spacing be 10~200 μm, the first semispherical silicon glue lens 102 do not contain fluorescent powder, the folding of the first semispherical silicon glue lens 102
Penetrate the refractive index that rate is greater than lower layer's silica gel 103.
Preferably, the material of the first semispherical silicon glue lens 102 can be polycarbonate, polymethyl methacrylate, glass
Glass.
Preferably, as shown in Fig. 6 a~6b, the first semispherical silicon glue lens 102 can be evenly distributed in rectangle or diamond shape.
Lower layer's silica gel 103 is formed in the first semispherical silicon glue lens 102 and blue-ray light die chip upper surface；
Wherein, lower layer's silica gel 103 without containing fluorescent powder and is the silica gel of high temperature resistant material.
Preferably, the material of lower layer's silica gel 103 can be modified epoxy, organosilicon material.
Second semispherical silicon glue lens 104 are formed in 103 upper surface of lower layer's silica gel；
Wherein, the diameter of the second semispherical silicon glue lens 104 is 10~200 μm, between the second semispherical silicon glue lens 104
Spacing be 10~200 μm, the second semispherical silicon glue lens 104 contain yellow fluorescent powder, the second semispherical silicon glue lens 104
Refractive index is greater than the refractive index of upper layer silica gel 105.
Preferably, the material of the second semispherical silicon glue lens 104 can be polycarbonate, polymethyl methacrylate, glass
Glass.
Preferably, as shown in Fig. 6 a~6b, the first semispherical silicon glue lens 102 and the second semispherical silicon glue lens 104 can
It, can be right between the first semispherical silicon glue lens 102 and the second semispherical silicon glue lens 104 with evenly distributed in rectangle or diamond shape
Neat arrangement, can also be staggered.
Preferably, the first semispherical silicon glue lens 102 and the second semispherical silicon glue lens 104 are planoconvex lens, focal length f=R/
(n2-n1), then the distance between the first semispherical silicon glue lens 102 and the second semispherical silicon glue lens 104 0≤x≤2R/
(n2-n1), simple in order to calculate, if n1For the refractive index of lower layer's silica gel 103, n2For the refraction of the first semispherical silicon glue lens 102
Rate, R are the radius of the first semispherical silicon glue lens 102.
Upper layer silica gel 105 is formed in 103 upper surface of the second semispherical silicon glue lens 104 and lower layer's silica gel；
Wherein, upper layer silica gel 105 with a thickness of 50~500 μm, refractive index≤1.5, upper layer silica gel 105 is glimmering containing yellow
Light powder, and the refractive index of upper layer silica gel 105 is greater than the refractive index of lower layer's silica gel 103.
Preferably, the material of upper layer silica gel 105 can be epoxy resin, modified epoxy, organosilicon material, methyl silicon
Rubber, phenyl organic silicon rubber.
The utility model embodiment has following advantage:
1, the silica gel being in contact in LED encapsulation structure with LED chip is silica gel resistant to high temperature, solves silica gel in high temperature item
The problem of light transmittance because of caused by silica gel aging jaundice declines under part.
2, the refractive index of lower layer's silica gel of the LED encapsulation structure is less than the refractive index of upper layer silica gel, the first hemispherical silica gel
The refractive index of lens is greater than the folding of upper layer silica gel greater than the refractive index of lower layer's silica gel and the refractive index of the second semispherical silicon glue lens
Rate is penetrated, the light transmittance of LED chip can be improved in this setup, and the light for enabling LED chip to be emitted is more saturating
Encapsulating material is crossed to shine out.
3, upper layer silica gel is hemispherical shape, and the beam angle of LED can be made maximum.
4, LED encapsulation structure at the middle and upper levels silica gel refractive index be greater than lower layer's silica gel refractive index, layer of silica gel refractive index is under
Being sequentially increased upwards can inhibit to be totally reflected, and improve the emergent light of LED, reduce and be absorbed generation because being totally reflected to internal light
Useless heat.
Example IV
Please again together referring to fig. 4, Fig. 5 and Fig. 6 a~6b.On the basis of the above embodiments, the present embodiment will be to multilayer
LED encapsulation structure is introduced, which includes:
Heat-radiating substrate；
Wherein, as shown in figure 4, the material of heat-radiating substrate is iron, the thickness D of heat-radiating substrate is 0.5~10mm, is being radiated
Circular through hole is provided in substrate, circular through hole arranges in the width direction inside heat-radiating substrate, and is in heat-radiating substrate plane
The circular through hole of certain angle；Wherein, the quantity of circular through hole is n and n >=2, diameter (radius R) are 0.1~0.3mm, round
Through-hole and the angle of heat-radiating substrate plane are 1~10 °, and the spacing A between circular through hole is 0.5~10mm.
Blue chip is formed in heat-radiating substrate upper surface；
Wherein, as shown in figure 5, blue chip structure includes: substrate 201, the GaN buffer layer 202 on substrate 201,
GaN layer 203 on GaN buffer layer 202, the p-type GaN Quantum Well wide bandgap layer 204 in position GaN layer 203 are located at p-type GaN
InGaN layer 205 in Quantum Well wide bandgap layer 204, the p-type GaN Quantum Well wide bandgap layer 206 in InGaN layer 205, position
The barrier layer AlGaN 207 in p-type GaN Quantum Well wide bandgap layer 206, the p-type GaN layer on the barrier layer AlGaN 207
208, the anode electrode 209 in p-type GaN layer 208 and the cathode electrode 210 in GaN layer 203.
First semispherical silicon glue lens, are formed in heat-radiating substrate and blue chip upper surface；
Wherein, the diameter of the first semispherical silicon glue lens is 10~200 μm, the spacing between the first semispherical silicon glue lens
It is 10~200 μm, the first semispherical silicon glue lens do not contain fluorescent powder, and the refractive index of the first semispherical silicon glue lens is greater than first
The refractive index of layer silica gel.
First layer silica gel is formed in the first semispherical silicon glue lens and blue chip upper surface；
Wherein, first layer silica gel without containing fluorescent powder and is the silica gel of high temperature resistant material.
Preferably, the material of first layer silica gel can be modified epoxy, organosilicon material.
N semispherical silicon glue lens are formed in N-1 layers of silica gel upper surface；
Wherein, the diameter of N >=2, N semispherical silicon glue lens is 10~200 μm, between N semispherical silicon glue lens
Spacing is 10~200 μm, and N semispherical silicon glue lens do not contain fluorescent powder, and the refractive index of N semispherical silicon glue lens is greater than
The refractive index of n-th layer silica gel.
N-th layer silica gel is formed in N-1 layers of silica gel and N semispherical silicon glue lens upper surface；
Wherein, n-th layer silica gel without containing fluorescent powder and is the silica gel of high temperature resistant material.
Preferably, the material of n-th layer silica gel can be modified epoxy, organosilicon material.
N+1 semispherical silicon glue lens are formed in n-th layer silica gel upper surface；
Wherein, the diameter of N+1 semispherical silicon glue lens is 10~200 μm, between N+1 semispherical silicon glue lens between
Away from being 10~200 μm, N+1 semispherical silicon glue lens 104 contain yellow fluorescent powder, the refraction of N+1 semispherical silicon glue lens
Rate is greater than the refractive index of N+1 layers of silica gel.
Preferably, the material of N+1 semispherical silicon glue lens can be polycarbonate, polymethyl methacrylate, glass.
Preferably, as shown in Fig. 6 a~6b, the first semispherical silicon glue lens to N+1 semispherical silicon glue lens can be in square
Shape or diamond shape are evenly distributed, and the first semispherical silicon glue lens, can also to can be with alignment between N+1 semispherical silicon glue lens
To be staggered.
Preferably, N-1 semispherical silicon glue lens and N semispherical silicon glue lens are planoconvex lens, focal length f=R/ (n2-
N1), then the distance between N-1 semispherical silicon glue lens and N semispherical silicon glue lens 0≤x≤2R/ (n2-n1), in order to count
It calculates simply, if n1For the refractive index of N-1 layers of silica gel, n2For the refractive index of N-1 semispherical silicon glue lens, R is N-1 hemisphere
The radius of shape silica-gel lens.
N+1 layers of silica gel are formed in N+1 semispherical silicon glue lens and n-th layer silica gel upper surface；
Wherein, N+1 layers of silica gel contains yellow fluorescence with a thickness of N+1 layers of 50~500 μm, refractive index≤1.5, the silica gel
Powder, and the refractive index of N+1 layers of silica gel is greater than the refractive index of n-th layer silica gel.
Preferably, the material of N+1 layers of silica gel can be epoxy resin, modified epoxy, organosilicon material, methyl silicon
Rubber, phenyl organic silicon rubber.
In conclusion specific case used herein is to a kind of encapsulation knot of LED provided by the embodiment of the utility model
The principle and embodiment of structure is expounded, the method for the above embodiments are only used to help understand the utility model
And its core concept；At the same time, for those skilled in the art, based on the idea of the present invention, in specific embodiment party
There will be changes in formula and application range, in conclusion the content of the present specification should not be construed as the limit to the utility model
System, the protection scope of the utility model should be subject to the attached claims.
Claims (6)
1. a kind of encapsulating structure of LED characterized by comprising
Heat-radiating substrate (101)；
Blue-ray light die chip is located at the heat-radiating substrate (101) upper surface；
First semispherical silicon glue lens (102) are arranged in the blue-ray light die chip and the heat-radiating substrate (101) upper surface interval
Column；
Lower layer's silica gel (103) is located at the blue-ray light die chip and the first semispherical silicon glue lens (102) upper surface；
Second semispherical silicon glue lens (104) are alternatively arranged in lower layer's silica gel (103) upper surface；
Upper layer silica gel (105) is located at lower layer's silica gel (103) and the second semispherical silicon glue lens (104) upper surface.
2. structure according to claim 1, which is characterized in that the material of the heat-radiating substrate (101) be iron, with a thickness of
0.5~10mm.
3. structure according to claim 2, which is characterized in that be provided with circular through hole in the heat-radiating substrate (101), institute
It states circular through hole to arrange along the heat-radiating substrate (101) width direction, and with the heat-radiating substrate (101) plane at 1~10 °
Angle；Wherein, the diameter of the circular through hole is 0.1~0.3mm, and the spacing between the circular through hole is 0.5~10mm.
4. structure according to claim 1, which is characterized in that the second semispherical silicon glue lens (104) and it is described on
Layer silica gel (105) contains yellow fluorescent powder.
5. structure according to claim 1, which is characterized in that the diameter of the first semispherical silicon glue lens (102) is
10~200 μm, the spacing between the first semispherical silicon glue lens (102) is 10~200 μm.
6. structure according to claim 1, which is characterized in that the diameter of the second semispherical silicon glue lens (104) is
10~200 μm, the spacing between the second semispherical silicon glue lens (104) is 10~200 μm.
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| CN201721624637.3U CN208256718U (en) | 2017-11-28 | 2017-11-28 | A kind of encapsulating structure of LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108011011A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
| CN110021648A (en) * | 2019-03-27 | 2019-07-16 | 武汉华星光电半导体显示技术有限公司 | Display panel |
-
2017
- 2017-11-28 CN CN201721624637.3U patent/CN208256718U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108011011A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
| CN108011011B (en) * | 2017-11-28 | 2020-02-18 | 深圳市穗晶光电股份有限公司 | LED packaging structure |
| CN110021648A (en) * | 2019-03-27 | 2019-07-16 | 武汉华星光电半导体显示技术有限公司 | Display panel |
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