CN108011022B - LED lamp and LED packaging method - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
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Abstract
The invention relates to an LED lamp and an LED packaging method, wherein the packaging method comprises the following steps: selecting an LED chip; selecting a heat sink and cleaning the heat sink; welding the lead of the LED chip to the heat sink; and encapsulating a light guide material on the heat sink so that light emitted by the LED chip is emitted outwards through the light guide material. The LED lamp provided by the invention is packaged by adopting the method, and the packaging method solves the problems of quantum efficiency reduction and light transmittance reduction of the fluorescent powder caused by high temperature through the separation of the fluorescent powder and the LED chip.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an LED lamp and an LED packaging method.
Background
A light Emitting diode (led), which is a solid semiconductor device that can directly convert electricity into light. The practicability and commercialization of high-performance LEDs make the lighting technology face a new revolution. The pixel lamp composed of a plurality of ultra-high brightness red, blue and green LEDs not only can emit various color lights with continuously adjustable wavelength, but also can emit white light with brightness reaching dozens of to one hundred candles to be used as an illumination light source, and for incandescent lamps and LED solid illumination lamps with the same brightness, the power consumption of the latter accounts for 10-20% of that of the former.
Most of the white light LEDs produced in reality are made by covering a layer of yellowish fluorescent powder coating on a blue light LED, when an LED chip emits blue light, part of the blue light can be efficiently converted into light with a wide spectrum and mainly yellow by the fluorescent powder, and the yellow light can stimulate red light and green light receptors in naked eyes and then is mixed with the blue light of the LED to make the LED look like white light. Such LEDs have extremely widespread application in everyday life.
The LED adopting the above mode to emit light has the following defects: the distribution of light emitted by the LED light source is dispersed, the illumination brightness of the light source is poor, and the brightness requirement can be met only by shaping treatment of an external lens, so that the generation cost of the LED is greatly increased; the fluorescent powder is directly coated on the surface of the chip, the chip has an absorption effect on scattered light, the luminous efficiency is reduced, the quantum efficiency of the fluorescent powder is reduced due to the high temperature of the chip, the lumen efficiency of an LED light source is influenced, a series of problems such as light intensity reduction, spectrum deviation and accelerated chip aging are easily caused, and the service life of the LED light source is shortened.
Disclosure of Invention
In order to improve the working performance of the LED chip, the invention provides an LED packaging method, which comprises the following steps:
selecting an LED chip;
selecting a heat sink and cleaning the heat sink;
welding the lead of the LED chip to the heat sink;
and encapsulating a light guide material on the heat sink so that light emitted by the LED chip is emitted outwards through the light guide material.
In one embodiment of the invention, the LED chip comprises a substrate layer, a GaN buffer layer, an N-type GaN layer, a first P-type GaN quantum well wide band gap layer, an InGaN layer, a second P-type GaN quantum well wide band gap layer, an AlGaN barrier layer, a P-type GaN layer and an electrode in sequence.
In one embodiment of the present invention, the material of the heat sink is iron.
In one embodiment of the invention, the thickness of the heat sink is between 0.5 mm and 10 mm, a plurality of mutually parallel circular grooves are arranged along the width direction of the heat sink, and the distance between two adjacent circular grooves is between 0.5 mm and 10 mm; each of the circular slots has a diameter between 0.2 mm and 1 mm, wherein an axis forms an angle between 1 degree and 10 degrees with a bottom plane of the heat sink.
In one embodiment of the present invention, potting a light guide material on the heat sink includes:
and sequentially forming a first light guide material, a second light guide material and a third light guide material on the heat sink, wherein the refractive index of the third light guide material is greater than that of the first light guide material and less than that of the second light guide material.
In an embodiment of the present invention, the first light guide material is a first silica gel layer without containing phosphor, the second light guide material is a second silica gel layer containing phosphor, and the third light guide material is a third silica gel layer containing phosphor.
In one embodiment of the present invention, potting a light guide material on the heat sink includes:
coating first silica gel on the LED chip to form a first silica gel layer;
baking the first silica gel layer at the temperature of 90-125 ℃, wherein the baking time lasts for 15-60 minutes;
coating second silica gel on the first silica gel layer, and pressing the second silica gel layer by adopting a plurality of first hemispherical molds;
removing the second silica gel among the plurality of first hemispherical molds;
baking the first hemispherical mold and the second silica gel at a temperature of between 90 and 125 ℃ for 15 to 60 minutes; subsequently, removing the first hemispherical mold to form the second silica gel layer;
coating third silica gel on the second silica gel layer, and pressing the third silica gel layer by adopting a second hemispherical die; wherein the radius of the second hemispherical mold is greater than the sum of the radii of the plurality of first hemispherical molds;
baking the second hemispherical mold and the third silica gel at a temperature of between 90 and 125 ℃ for 15 to 60 minutes; subsequently, removing the second hemispherical mold to form the third silica gel layer;
and baking the first silica gel layer, the second silica gel layer and the third silica gel layer at the temperature of 100-150 ℃, wherein the baking time lasts for 4-12 hours.
In one embodiment of the invention, the radius of the first hemispherical mold is 10 to 200 micrometers, and the distance between two connected first hemispherical molds is 10 to 200 micrometers.
In an embodiment of the present invention, the second silica gel and the third silica gel each include yellow phosphor, and the corresponding fluorescence wavelength range is between 570nm and 620 nm.
In an embodiment of the present invention, the LED chip is packaged by the method of any one of the above embodiments.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the LED packaging method provided by the invention, the fluorescent powder is separated from the LED chip, so that the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved; the silica gel contacted with the LED chip is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
2. The spherical lens, namely the silica gel ball, provided by the invention contains yellow fluorescent powder, so that part of light rays is changed into yellow light in the secondary adjustment process; by changing the content of the yellow fluorescent powder in the silica gel, the color of the light can be continuously adjusted to be changed into white light and then yellow light, and the color temperature of the light source can be adjusted.
3. According to the LED packaging structure and the method thereof, the lens is formed in the silica gel by utilizing the characteristics of different silica gel and fluorescent powder gel refractive indexes, so that the problem of light emission dispersion of an LED chip is solved, and light emitted by a light source can be more concentrated; the refractive index of each layer of silica gel is reasonably set, so that more LED chips can be irradiated by the transmission packaging material.
4. The silica gel balls provided by the invention can be uniformly arranged in a rectangular shape or in a rhombic shape. The light of light source can be guaranteed and evenly distributed in the concentration district.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Fig. 1 is a schematic flow chart of an LED packaging method according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a heat sink structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an LED formed by the packaging process provided in the embodiment of the present invention;
fig. 5 a-5 b are schematic diagrams illustrating the distribution of a hemispherical silica gel layer according to an embodiment of the invention;
fig. 6 is a schematic flow chart of another LED packaging method according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic flow chart of an LED packaging method according to an embodiment of the present invention, where the method includes:
selecting an LED chip;
selecting a heat sink and cleaning the heat sink;
welding the lead of the LED chip to the heat sink;
and encapsulating a light guide material on the heat sink so that light emitted by the LED chip is emitted outwards through the light guide material.
Further, on the basis of the foregoing embodiments, please refer to fig. 2, and fig. 2 is a schematic structural diagram of an LED chip according to an embodiment of the present invention, where the LED chip sequentially includes a substrate layer (221), a GaN buffer layer (222), an N-type GaN layer (223), a first P-type GaN quantum well wide band gap layer (224), an InGaN layer (225), a second P-type GaN quantum well wide band gap layer (226), an AlGaN barrier layer (227), a P-type GaN layer (228), and an electrode.
Preferably, the material of the heat sink is iron. The iron is used as a heat sink material, so that the heat sink has a good heat conduction effect and is not easy to deform.
Further, on the basis of the foregoing embodiment, please refer to fig. 3, where fig. 3 is a schematic view of a heat sink structure provided by an embodiment of the present invention, a thickness of the heat sink is between 0.5 mm and 10 mm, a plurality of circular grooves parallel to each other are arranged along a width direction of the heat sink, and a distance between two adjacent circular grooves is between 0.5 mm and 10 mm; each of the circular slots has a diameter between 0.2 mm and 1 mm, wherein an axis forms an angle between 1 degree and 10 degrees with a bottom plane of the heat sink.
This embodiment adopts the mode of middle through-hole, when intensity does not change almost, the cost is reduced to, adopt the mode of middle through-hole, and adopt the design of "oblique circular slot", for "parallel circular slot", further increase the length of circulation of air's passageway, utilize the thermal convection of air, increased the radiating effect.
Further, a light guide material is encapsulated on the heat sink, which may be:
and sequentially forming a first light guide material, a second light guide material and a third light guide material on the heat sink, wherein the refractive index of the third light guide material is greater than that of the first light guide material and less than that of the second light guide material.
In this embodiment, the refractive index of the third light guide material should be strictly controlled not to be too large, because if the refractive index of the third light guide material is too large, the total reflection effect of light is significantly increased, resulting in poor light extraction efficiency and serious heat generation.
The light guide material in the embodiment is used for gathering light emitted by the LED light source and improving the light emitting brightness of the light source, and further, the multi-layer light guide material with the refractive index can ensure that more LED chips can be irradiated out through the packaging material without adopting an external lens for secondary shaping, so that the cost is reduced.
Further, in addition to the above embodiment, the first light guide material is a first silica gel layer containing no phosphor, the second light guide material is a second silica gel layer containing phosphor, and the third light guide material is a third silica gel layer containing phosphor.
This embodiment is through placing phosphor powder in leaded light material, rather than with phosphor powder direct coating on the LED chip, has avoided the LED chip to the absorption of backscatter light, has improved the efficiency of getting light of encapsulation. In addition, by adopting the embodiment, the problem that the quantum efficiency of the fluorescent powder is obviously reduced due to the high temperature generated by the LED chip is avoided, so that the damage of the lumen efficiency of the LED chip is avoided. Preferably, the first silica gel layer in contact with the LED chip is a high-temperature-resistant silica gel layer, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
In one embodiment, the potting light guide material on the heat sink may be:
coating first silica gel on the LED chip to form a first silica gel layer;
baking the first silica gel layer at the temperature of 90-125 ℃, wherein the baking time lasts for 15-60 minutes;
coating second silica gel on the first silica gel layer, and pressing the second silica gel layer by adopting a plurality of first hemispherical molds;
removing the second silica gel among the plurality of first hemispherical molds;
baking the first hemispherical mold and the second silica gel at a temperature of between 90 and 125 ℃ for 15 to 60 minutes; subsequently, removing the first hemispherical mold to form the second silica gel layer;
coating third silica gel on the second silica gel layer, and pressing the third silica gel layer by adopting a second hemispherical die; wherein the radius of the second hemispherical mold is greater than the sum of the radii of the plurality of first hemispherical molds;
baking the second hemispherical mold and the third silica gel at a temperature of between 90 and 125 ℃ for 15 to 60 minutes; subsequently, removing the second hemispherical mold to form the third silica gel layer;
and baking the first silica gel layer, the second silica gel layer and the third silica gel layer at the temperature of 100-150 ℃, wherein the baking time lasts for 4-12 hours.
Referring to fig. 4, fig. 4 is a schematic structural diagram of an LED formed by the packaging process according to the embodiment of the present invention.
Adopt this kind of mode can generate a plurality of hemispherical second silica gel layers, through the test, adopt this kind of packaging structure's transmission mode, can make the light that jets out through the LED light source more even in all directions, especially satisfy the field that the scattering nature of focusing requires higher.
Further, on the basis of the above embodiment, the radius of the first hemispherical mold is 10 to 200 micrometers, and the distance between two connected first hemispherical molds is 10 to 200 micrometers.
Further, on the basis of the above embodiment, the second silica gel and the third silica gel both include yellow phosphor, and the corresponding fluorescence wavelength range is between 570nm and 620 nm.
In this embodiment, the yellow phosphor can be (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu or M- α -SiAlON is prepared from Eu material.
The second silica gel and the third silica gel provided by the invention contain yellow fluorescent powder, so that light rays are changed into yellow light to a certain extent in the emergent process; by changing the content of the yellow fluorescent powder in the silica gel, the color of the light can be continuously adjusted to be changed into white light and then yellow light, and the color temperature of the light source can be adjusted.
Referring to fig. 5 a-5 b, fig. 5 a-5 b are schematic diagrams illustrating the distribution of a hemispherical silica gel layer according to an embodiment of the present invention, wherein the hemispherical silica gel layer in fig. 5a is uniformly distributed between a first silica gel layer and a third silica gel layer in a rectangular shape; the hemispherical silica gel layer in fig. 5b is uniformly distributed between the first silica gel layer and the third silica gel layer in a diamond shape. The hemispherical silica gel layers can be uniformly arranged in a rectangular shape or staggered in a rhombic shape; the light of light source can be guaranteed and evenly distributed in the concentration district.
In addition, as for the shape of the third silicone gel layer, a flat shape, a hemispherical shape or a parabolic shape can be adopted. Wherein, the hemispherical light-emitting angle is the largest, and the LED is suitable for common lighting application; the parabolic light-emitting angle is minimum, so that the method is suitable for local illumination application; and a flat shape between the first two, suitable for indicating illumination.
According to the LED packaging structure and the method thereof, the lens is formed in the silica gel by utilizing the characteristics of different silica gels and fluorescent powder gels that the refractive indexes are different, so that the problem of light emission dispersion of an LED chip is solved, and light emitted by a light source can be more concentrated; the refractive index of the second silica gel layer is greater than that of the first silica gel layer and smaller than that of the third silica gel layer, so that more LED chips can be irradiated out through the packaging material.
The embodiment of the invention also provides an LED lamp which comprises an LED chip, wherein the LED chip is packaged by adopting the method of any one of the above embodiments.
Example two
The present embodiment further describes the method for packaging the LED chip provided by the present invention.
Referring to fig. 3 again, in the heat sink shown in fig. 3, the width W of the heat sink is 0.5 mm to 10 mm, the diameter R of the circular groove is 0.2 mm to 1 mm, the distance L2 between two connected circular grooves is 0.5 mm to 10 mm, the thickness D and the length L of the heat sink, and the distance L1 between the initial circular groove and the wall of the heat sink can be determined by itself according to the process conditions, which is not limited herein.
Preferably, the thickness of the heat sink adopted in the embodiment is relatively thick, so that the heat sink does not affect the heat dissipation effect due to the fact that the fit degree of the heat sink and the peripheral heat dissipation equipment is reduced due to high-temperature deformation.
Referring to fig. 4 again, in fig. 4, the first silica gel layer (22) is disposed on the heat sink (21), the second silica gel layer (23) is hemispherical, the radius r of each hemisphere is 5 to 100 micrometers, and the distance a between two adjacent hemispheres is 10 to 200 micrometers. The third silica gel layer (24) is coated on the second silica gel layer (23). Further, the radius r of each hemisphere is larger than 10 micrometers, the thickness of the first silica gel layer is larger than 3 micrometers, the distance A between the two hemispheres is reduced as much as possible according to process conditions, preferably, A is 10 micrometers, and the thickness D of the heat sink is 90 micrometers to 140 micrometers.
The advantages of using a ball lens also include: the design of the spherical lens can change the propagation direction of light, can effectively inhibit the total reflection effect, is beneficial to emitting more light out of the third silica gel layer, increases the external quantum efficiency of the LED device, and improves the luminous efficiency of the LED.
In the present embodiment, the second silicone gel layer (23) includes a plurality of hemispherical plano-convex mirrors, that is, a set of hemispherical lenses forms the third silicone gel layer (24). Preferably, the third silicone gel layer (24) has a characteristic thickness of 50 to 500 microns. In the present embodiment, the characteristic thickness of the third silica gel layer (24) is: a perpendicular line perpendicular to the first silica gel layer (22) is made at the center of the circle of the second silica gel layer (23), a point formed by the intersection of the perpendicular line and the outer surface (namely, the arc-shaped outer surface) of the third silica gel layer (24) is defined as a characteristic point, and the characteristic thickness of the third silica gel layer (24) is the distance between the center of the circle and the characteristic point. Obviously, in the present embodiment, the characteristic thickness of the third silica gel layer (24) is not uniform, for example, please refer to fig. 4 again, OP and MN are both the characteristic thickness of the third silica gel layer (24), OP length is smaller than MN, and "the characteristic thickness of the third silica gel layer (24) is 50-500 microns", both OP and MN lengths are required to be 50-500 microns.
The second silica gel layer (23) can be made of polycarbonate, polymethyl methacrylate or glass; the material of the first silica gel layer (22) can be epoxy resin, modified epoxy resin or organic silicon material, and the material of the third silica gel layer (24) can be methyl silicone rubber (refractive index is 1.41) and phenyl organic silicone rubber (refractive index is 1.54). The refractive index of the above materials can be adjusted according to specific compositions.
Referring to fig. 6, fig. 6 is a schematic flow chart of another LED packaging method according to an embodiment of the present invention, in the packaging process, an LED chip, a support/heat sink are prepared, silica gel is configured, phosphor gel is pre-configured in the silica gel, phosphor with a corresponding color can be configured according to specific LED lamp index requirements, and the phosphor is mixed with each silica gel, and a color test is performed after mixing to meet the color requirements of an LED lamp.
In one embodiment, the yellow phosphor is (Y, Gd)3(Al,Ga)5O12Ce or (Ca, Sr, Ba)2SiO4Eu, or M- α -SiAlON, Eu, the corresponding emission wavelength range is 560 nm-600 nm.
Subsequently, the rack/heat sink is cleaned, and for packaging, the rack and heat sink must be kept clean, and stains, especially oil stains, thereon need to be cleaned and baked to keep the rack and substrate dry.
And then, welding the chip, after the bracket and the heat sink are cleaned, welding the lead of the chip, wherein the welding adopts a standard reflow soldering process, and the specific process comprises the following steps: printing solder, die attach inspection and reflow soldering.
And then, in the stage of preparing the lens and encapsulating the silica gel, the silica gel layer is shaped by repeatedly coating the silica gel, pressing the mold, baking for a short time for fixing, removing the mold and baking for a long time. The short-time baking can be carried out within the range of 90-125 ℃ for 15-60 minutes; the baking time is long and the baking time is 4-12 hours within the range of 100-150 ℃.
Finally, the finished LED is inspected and packaged to complete its packaging.
In summary, the principle and embodiments of the present invention are explained herein by using specific examples, and the above descriptions of the examples are only used to help understanding the present invention and its core ideas; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (5)
1. An LED packaging method, comprising:
selecting an LED chip;
selecting a heat sink and cleaning the heat sink;
welding the lead of the LED chip to the heat sink;
encapsulating a light guide material on the heat sink to enable light emitted by the LED chip to be emitted outwards through the light guide material, comprising,
coating first silica gel on the LED chip to form a first silica gel layer, wherein the first silica gel layer is a high-temperature-resistant silica gel layer;
baking the first silica gel layer at the temperature of 90-125 ℃, wherein the baking time lasts for 15-60 minutes;
coating second silica gel on the first silica gel layer, and pressing the second silica gel layer by adopting a plurality of first hemispherical molds;
removing the second silica gel among the plurality of first hemispherical molds;
baking the first hemispherical mold and the second silica gel at a temperature of between 90 and 125 ℃ for 15 to 60 minutes; then, removing the first hemispherical mold to form the second silica gel layer, wherein the radius of the first hemispherical mold is 10-200 microns, and the distance between two connected first hemispherical molds is 10-200 microns;
coating third silica gel on the second silica gel layer, and pressing the third silica gel layer by adopting a second hemispherical die; wherein the radius of the second hemispherical mold is greater than the sum of the radii of the plurality of first hemispherical molds;
baking the second hemispherical mold and the third silica gel at a temperature of between 90 and 125 ℃ for 15 to 60 minutes; subsequently, removing the second hemispherical mold to form the third silica gel layer;
baking the first silica gel layer, the second silica gel layer and the third silica gel layer at the temperature of 100-150 ℃, wherein the baking time lasts for 4-12 hours;
the refractive index of the third silica gel layer is greater than that of the first silica gel layer and less than that of the second silica gel layer, wherein the first silica gel layer is a silica gel layer without fluorescent powder, the second silica gel layer is a silica gel layer containing fluorescent powder, and the third silica gel layer is a silica gel layer containing fluorescent powder;
a plurality of mutually parallel circular grooves are arranged along the width direction of the heat sink, and the distance between every two adjacent circular grooves is between 0.5 mm and 10 mm; each of the circular slots has a diameter between 0.2 mm and 1 mm, wherein an axis forms an angle between 1 degree and 10 degrees with a bottom plane of the heat sink.
2. The method of claim 1, wherein the LED chip comprises, in order, a substrate layer, a GaN buffer layer, an N-type GaN layer, a first P-type GaN quantum well wide band gap layer, an InGaN layer, a second P-type GaN quantum well wide band gap layer, an AlGaN barrier layer, a P-type GaN layer, and an electrode.
3. The method of claim 2, wherein the material of the heat sink is iron.
4. The method of claim 1, wherein the second silica gel and the third silica gel each comprise yellow phosphor, and the corresponding fluorescence wavelength ranges from 570nm to 620 nm.
5. An LED lamp comprising an LED chip, wherein the LED chip is packaged by the method of any one of claims 1 to 4.
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