CN107994110B - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN107994110B CN107994110B CN201711214215.3A CN201711214215A CN107994110B CN 107994110 B CN107994110 B CN 107994110B CN 201711214215 A CN201711214215 A CN 201711214215A CN 107994110 B CN107994110 B CN 107994110B
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- silica gel
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- spherical lenses
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000000741 silica gel Substances 0.000 claims abstract description 79
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 claims description 2
- 238000005286 illumination Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 7
- 229920002379 silicone rubber Polymers 0.000 description 7
- 239000004945 silicone rubber Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 239000000499 gel Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED packaging structure, comprising: a package substrate (21); the LED chip is fixedly connected to the packaging substrate (21); the silica gel layer includes: the LED chip comprises a first silica gel layer (22) and a second silica gel layer (24) which are sequentially arranged on the upper surface of the LED chip, wherein a plurality of spherical lenses (23) are further arranged between the first silica gel layer (22) and the second silica gel layer (24), and the second silica gel layer (24) contains yellow fluorescent powder. According to the embodiment of the invention, the plurality of spherical lenses are arranged, and the yellow fluorescent powder is arranged on the second silica gel layer, so that the illumination is more concentrated, the additional lens is avoided, and the production cost is reduced.
Description
Technical Field
The invention belongs to the technical field of photoelectric devices, and particularly relates to an LED packaging structure.
Background
The LED has the characteristics of long service life, high luminous efficiency, good color rendering property, safety, reliability, rich colors and easy maintenance. Under the background of today's increasingly serious environmental pollution, climate warming and energy source tension, the semiconductor lighting technology developed based on high-power LEDs has been recognized as one of the most promising high-technology fields in the 21 st century, which is a great leap in the history of human lighting since behind gas lighting, incandescent lamps and fluorescent lamps, and rapidly improves the lighting quality of human life.
The demand for LEDs has increased over the past several years, particularly for high brightness and high power LEDs. However, although the high-brightness and high-power LED can generate a large amount of light, it can also generate a large amount of heat, and the quantum efficiency of the phosphor directly coated on the chip surface is significantly reduced due to the high temperature, thereby seriously affecting the lumen efficiency of the LED package structure.
On the other hand, because the light emitted by the LED light source is generally distributed in a divergent manner, the illumination brightness of the light source is not concentrated enough, and the prior art generally shapes the light beam by adding an external lens, which increases the production cost.
Disclosure of Invention
In view of the above problems, the present invention provides a new LED package structure, and the specific embodiments are as follows.
Specifically, an embodiment of the present invention provides an LED package structure, including:
a package substrate 21;
the LED chip is fixedly connected to the packaging substrate 21;
the silica gel layer includes: the LED chip comprises a first silica gel layer 22 and a second silica gel layer 24 which are sequentially arranged on the upper surface of the LED chip, wherein a plurality of spherical lenses 23 are further arranged between the first silica gel layer 22 and the second silica gel layer 24, and the second silica gel layer 24 contains yellow fluorescent powder.
In an embodiment of the present invention, the upper surface of the second silicone gel layer 24 is arc-shaped.
In an embodiment of the present invention, the yellow phosphor is contained in each of the plurality of spherical lenses 23.
In an embodiment of the present invention, the refractive index of the first silicone rubber layer 22 is smaller than the refractive index of the second silicone rubber layer 24, and the refractive index of the spherical lens 23 is larger than the refractive index of the second silicone rubber layer 24. .
In one embodiment of the present invention, the first silicone gel layer 22 is a high temperature resistant silicone gel.
In one embodiment of the present invention, the LED chip is a GaN-based blue chip.
In one embodiment of the present invention, the diameter of the ball lens 23 is 10-200 microns, and the plurality of ball lenses 23 are uniformly spaced at intervals of 10-200 microns.
In an embodiment of the present invention, the plurality of spherical lenses 23 may be arranged in a rectangular shape, or may be arranged in a diamond shape.
In one embodiment of the present invention, the base plate 21 is a solid aluminum plate, and the thickness of the base plate 21 is greater than 0.5mm and less than 10 mm.
In one embodiment of the present invention, the present invention further comprises a bracket, and the substrate 21 is fixed on the bracket by means of a snap or an adhesive.
The invention has the beneficial effects that:
1. the spherical lens is arranged between the first silica gel layer and the second silica gel layer, and the upper surface of the second silica gel layer forms an arc shape, so that the packaging structure has the function of the lens, the phenomenon that extra lenses are added to shape the light is avoided while the illumination is more concentrated is ensured, and the production cost is reduced;
2. by adopting the silica gel containing the yellow fluorescent powder to manufacture the spherical lens and the second silica gel layer, the direct contact between the fluorescent powder and the LED chip is avoided, and the light extraction efficiency of LED packaging is improved.
Drawings
Fig. 1 is a schematic structural diagram of an LED package structure according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a GaN-based blue light chip according to an embodiment of the invention;
fig. 3A and 3B are schematic arrangement diagrams of a plurality of spherical lenses according to an embodiment of the present invention.
Description of reference numerals:
21-a package substrate;
22-a first silicone gel layer;
23-a spherical lens;
24-second silicone gel layer.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an LED package structure according to an embodiment of the present invention; the LED package structure provided in the embodiments of the present invention includes: a package substrate 21; the LED chip is fixedly connected to the packaging substrate 21; specifically, the LED chip is a GaN-based blue light chip.
Further, the encapsulation structure further comprises a silica gel layer, wherein the silica gel layer in the embodiment of the present invention comprises a first silica gel layer 22 and a second silica gel layer 24 sequentially arranged on the upper surface of the LED chip, that is, the silica gel layer in the embodiment of the present invention is composed of two silica gel layers, specifically, the first silica gel layer 22 is directly coated on the upper surface of the LED chip and directly contacts with the LED chip, the first silica gel layer 22 does not contain yellow phosphor, the second silica gel layer 24 is located above the first silica gel layer 22 and does not contact with the LED chip, and the second silica gel layer 24 contains yellow phosphor, so that the purpose of separating the LED chip from the phosphor is achieved, the LED chip is prevented from absorbing light reflected by the phosphor, and the light extraction efficiency is improved; and the blue light emitted by the LED chip is irradiated on the yellow fluorescent powder, and the light and the color are mixed to form white light. Therefore, in the present embodiment, the yellow phosphor is mixed into the second silica gel layer 24, so that the technical problem that the quantum efficiency of the phosphor is significantly reduced due to the direct contact between the yellow phosphor and the LED chip is solved.
It should be noted that the LED chip in the embodiment of the present invention is a GaN-based blue light chip, and the structure of the LED chip is shown in fig. 2, and fig. 2 is a schematic structural diagram of the GaN-based blue light chip LED chip provided in the embodiment of the present invention; the layer 1 is a substrate material, the layer 2 is a GaN buffer layer, the layer 3 is an N-type GaN layer, the layers 4 and 6 are P-type GaN quantum well wide band gap materials, the layer 5 is an indan light emitting layer, the layer 7 is an AlGaN barrier material, the layer 8 is a P-type GaN layer, the thickness of the LED chip is between 90 and 140 micrometers, and the LED chip can be of other types.
Further, in the embodiment of the present invention, a plurality of spherical lenses 23 are further disposed between the first silica gel layer 22 and the second silica gel layer 24, specifically, an upper hemispherical mold and a lower hemispherical mold are first utilized to form silica gel balls, then the lower hemispherical mold is removed, the silica gel balls are placed in the hemispherical grooves on the upper surface of the first silica gel layer 22, after high temperature setting, the upper hemispherical mold is removed, and the spherical lenses 23 are formed, wherein the size of the silica gel balls is matched with the size of the hemispherical grooves on the upper surface of the first silica gel layer.
In the embodiment of the present invention, a plurality of spherical lenses 23 are disposed on the first silica gel layer 22, and finally, the second silica gel layer 24 is disposed above the plurality of spherical lenses 23 and the first silica gel layer 22, referring to fig. 1 again, two adjacent spherical lenses 23 are connected by a silica gel strip, and the second silica gel layer 24 is isolated from the first silica gel layer 22. Therefore, in the embodiment of the invention, the plurality of spherical lenses 23 are additionally arranged between the first silica gel layer 22 and the second silica gel layer 24, so that the problem of light emission dispersion of the LED chip is solved, the light beam is more uniform in a concentration region, and the light emitting efficiency and the light emitting uniformity of the LED light emitting diode are improved.
Please refer to fig. 1 again, the distance between the bottom surface of the ball lens 23 and the upper surface of the LED chip in this embodiment is L, and preferably L is greater than 3 μm.
In the embodiment of the present invention, the plurality of spherical lenses 23 are "convex mirrors", and the focal length f of the convex mirrors is R/(2(n2-n1)), where n2 is the refractive index of the spherical lens 23, n1 is the average of the refractive indexes of the first silica gel layer 22 and the second silica gel layer 24 (the refractive indexes of the upper and lower silica gels of the spherical lens 23 in the embodiment of the present invention are close), and R is the radius of the spherical lens 23.
In order to ensure that the light is not converged after exiting from the lens, but does not diverge, in the embodiment of the present invention, the height of the second silicone layer 24 above the top surface of the ball lens 23 should be within 2 times of the focal length, that is, the thickness of the second silicone layer 24 should be above the top surface R/(n2-n1) of the ball lens 23, and in practical application, the thickness of the second silicone layer 24 is generally 50 to 500 micrometers higher than the top surface of the ball lens 23.
Because the light emitted by the LED is distributed in a divergent manner, the LED light beam needs to be shaped by an external lens, so that the production cost is increased, and in order to solve the technical problem, in the embodiment of the present invention, the upper surface of the second silica gel layer 24 is in an arc shape, specifically, in the embodiment of the present invention, the upper surface of the second silica gel layer 24 is made into an arc shape by using a hemispherical mold, and the arc shape may be a hemispherical shape, a parabolic shape or a flat shape, wherein the hemispherical light-emitting angle is the largest, and the present invention is suitable for general illumination application; the parabolic light-exit angle is minimal and suitable for local lighting applications; and a flat shape between the two, suitable for indicating illumination. Therefore, the specific shape can be selected according to the application place of the product so as to achieve the best use effect. The middle height like this, the low outward appearance structure in both sides makes the second silica gel have had the effect of lens, and when the light struck second silica gel layer 24 surface, through the plastic of second silica gel layer 24 for illumination concentrates more evenly, need not increase outside lens moreover, has reduced manufacturing cost.
In this embodiment, in order to better enable the GaN-based blue light chip to excite the yellow phosphor powder to emit white light, in this embodiment, the plurality of spherical lenses 23 each contain the yellow phosphor powder, specifically, a light beam emitted by the GaN-based blue light chip first irradiates the first silica gel layer 22 and then irradiates the spherical lens 23, and the spherical lens 23 can change the propagation direction of light, thereby effectively suppressing the total reflection effect, facilitating more light to be emitted outside the LED, and improving the light emitting efficiency of the LED. Because the spherical lens 23 and the second silica gel layer 24 both contain yellow fluorescent powder, light beams emitted by the GaN-based blue light chip can be irradiated on more yellow fluorescent powder, so that the LED light-emitting effect is better, and the technical problem of poor LED light-emitting effect caused by insufficient fluorescent powder is avoided.
It should be noted that, in order to ensure that the light beam emitted by the GaN-based blue light chip is continuously expanded, not only the spherical lenses 23 capable of expanding the irradiation range and the arc-shaped upper surface of the second silica gel layer 24 need to be provided, but also the following conditions need to be satisfied in terms of materials: the refractive index of the first encapsulation layer 22 is smaller than that of the second encapsulation layer 24, and the refractive index of the ball lens 23 is larger than that of the second encapsulation layer 24. Specifically, in the embodiment of the present invention, the arrangement mode in which the refractive index of the silica gel layer increases from bottom to top in sequence can better suppress the total reflection phenomenon, and the smaller the refractive index of the second encapsulation layer 24, the better the refractive index is, so as to avoid the formation of a refractive index difference between the second encapsulation layer 24 and the outside air, which leads to total reflection.
In the embodiment of the present invention, the lens silicone material of the plurality of spherical lenses 23 may be a mixture of polycarbonate, polymethylmethacrylate and glass, and the refractive index of the spherical lenses 23 may be adjusted according to different components. The material of the second silicone rubber layer 24 may be a mixture of methyl silicone rubber and phenyl high refractive index silicone rubber, and in the embodiment of the present invention, the smaller the refractive index of the second silicone rubber layer 24, the better, with 1.5 as the upper limit. Therefore, when the light emitted by the GaN-based blue light chip is radiated outwards, better light-emitting rate can be obtained, and the light is more uniform in the irradiation area.
It should be noted that, because the first silica gel layer 22 is directly coated on the LED chip and needs to be able to withstand a large amount of heat emitted from the LED chip, the first silica gel layer 22 contacting the LED chip is made of high temperature resistant silica gel, so that the problem of transmittance reduction caused by aging and yellowing of the silica gel due to heating can be avoided.
In addition, the yellow phosphor in the embodiment of the invention can adopt (Y, Gd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu, M- α -SiAlON, Eu, etc., and the yellow phosphor is excited after light rays pass through the spherical lens 23 and the second silica gel layer 24, so that the wavelength range of the emitted fluorescence is 570nm-620 nm.
In the embodiment of the present invention, the size of the spherical lens 23 is limited, and if the size of the spherical lens 23 is too small, the spherical lens 23 cannot perform a light-gathering function, and if the size of the spherical lens 23 is too large, the illumination is likely to be uneven, so in the embodiment, the diameter 2R of the spherical lens 23 is between 10 and 200 micrometers, and the plurality of spherical lenses 23 are uniformly spaced, that is, the distance is equal, in the embodiment, the distance a between two adjacent spherical lenses 23 is 10 to 200 micrometers, preferably, the distance a between two adjacent spherical lenses is between 5 micrometers and 10 micrometers, and in the embodiment of the present invention, the smaller the distance between two adjacent spherical lenses 23 is, the better.
It should be noted that, in the embodiment of the present invention, the intervals between the plurality of spherical lenses 23 may not be equal, which is based on the actual requirement in the industrial production.
It should be noted that, in the embodiment of the present invention, the spherical lens 23 shapes the light irradiated by the GaN-based blue chip, so as to make the light beam more concentrated, as shown in fig. 3A and fig. 3B, the plurality of spherical lenses 23 formed on the first silica gel layer 22 may be uniformly arranged in a rectangular shape, or may be uniformly arranged in a rhombic shape, and in addition, the arrangement manner of the plurality of spherical lenses 23 may also be in a circular shape, an elliptical shape, or an irregular shape, so as to ensure that the light of the light source is uniformly distributed in the concentrated region to the maximum extent, which is not limited in the embodiment of the present invention.
Because the LED chip is in contact with the packaging substrate 21 and the packaging substrate 21 is used for heat dissipation, the packaging substrate 21 in the embodiment of the invention adopts a solid aluminum plate with good heat dissipation performance, the aluminum plate has large heat capacity and good heat conduction effect, the thickness of the packaging substrate 21 is between 0.5mm and 10mm, and the substrate can be prevented from being heated and deformed by adopting the thicker packaging substrate 21, so that the technical problems that the packaging substrate is not in close contact with the LED chip due to the heated deformation and the heat dissipation effect is poor are solved.
In the embodiment of the present invention, the led module further includes a bracket, and the substrate 21 is fixed on the bracket by a snap or an adhesive, in the embodiment of the present invention, after the substrate 21 is fixed on the bracket, in practical use, the bracket can be fixed on any component or position using the led.
The foregoing is a more particular description of embodiments of the invention, as illustrated in the accompanying drawings, in which reference should be made to the specific embodiments illustrated in the accompanying drawings. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (6)
1. An LED package structure, comprising:
a package substrate (21);
the LED chip is fixedly connected to the packaging substrate (21);
the silica gel layer includes: the LED chip comprises a first silica gel layer (22) and a second silica gel layer (24) which are sequentially arranged on the upper surface of the LED chip, and a plurality of spherical lenses (23) are arranged between the first silica gel layer (22) and the second silica gel layer (24), wherein the second silica gel layer (24) and the spherical lenses (23) contain yellow fluorescent powder;
the spherical lenses (23) are silica gel balls, the lower half parts of the silica gel balls are arranged in the hemispherical grooves on the first silica gel layer (22), and the second silica gel layer (24) is formed on the first silica gel layer (22) between the upper half parts of the spherical lenses (23) and the plurality of spherical lenses (23); the diameter of the spherical lens (23) is 10-200 microns, and the spherical lenses (23) are uniformly arranged at intervals with the interval of 10-200 microns;
the refractive index of the first silica gel layer (22) is smaller than that of the second silica gel layer (24), and the refractive index of the spherical lens (23) is larger than that of the second silica gel layer (24);
the focal length f of the spherical lens (23) is R/(2(n2-n1)), wherein n2 is the refractive index of the spherical lens (23), n1 is the average value of the refractive indexes of the first silica gel layer (22) and the second silica gel layer (24), and R is the radius of the spherical lens (23);
the upper surface of the second silica gel layer (24) is arc-shaped, and the distance that the highest point of the arc is higher than the top surface of the spherical lens (23) is less than R/(n2-n 1).
2. The LED package structure of claim 1, wherein the first silicone layer (22) is a high temperature resistant silicone.
3. The LED package structure of claim 1, wherein the LED chip is a GaN-based blue light chip.
4. The LED package structure of claim 1, wherein the plurality of spherical lenses (23) are arranged in a rectangular shape or a rhombic shape.
5. The LED package structure of claim 1, wherein the substrate (21) is a solid aluminum plate, and the thickness of the substrate (21) is greater than 0.5mm and less than 10 mm.
6. The LED packaging structure according to claim 1, further comprising a bracket, wherein the substrate (21) is fixed on the bracket by means of a snap fit or an adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214215.3A CN107994110B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214215.3A CN107994110B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
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| Publication Number | Publication Date |
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| CN107994110A CN107994110A (en) | 2018-05-04 |
| CN107994110B true CN107994110B (en) | 2020-03-24 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
| CN207705235U (en) * | 2017-11-28 | 2018-08-07 | 西安科锐盛创新科技有限公司 | A kind of LED encapsulation structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8764504B2 (en) * | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
| CN207705235U (en) * | 2017-11-28 | 2018-08-07 | 西安科锐盛创新科技有限公司 | A kind of LED encapsulation structure |
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