CN108011008B - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN108011008B CN108011008B CN201711214208.3A CN201711214208A CN108011008B CN 108011008 B CN108011008 B CN 108011008B CN 201711214208 A CN201711214208 A CN 201711214208A CN 108011008 B CN108011008 B CN 108011008B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 125
- 239000000741 silica gel Substances 0.000 claims abstract description 123
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 123
- 239000000843 powder Substances 0.000 claims abstract description 39
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 34
- 230000017525 heat dissipation Effects 0.000 claims description 23
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 230000032683 aging Effects 0.000 abstract description 6
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000004383 yellowing Methods 0.000 abstract description 4
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 239000000499 gel Substances 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED packaging structure, which comprises: an LED chassis (11); the first silica gel layer (12) is arranged on the LED bottom plate (11); a lens region (13) arranged on the first silica gel layer (12); and the second silica gel layer (14) is arranged on the first silica gel layer (12) and the lens area (13). The LED packaging structure provided by the invention adopts the process of separating the fluorescent powder from the LED chip, so that the problem of the quantum efficiency reduction of the fluorescent powder caused by high temperature is solved; the silica gel in contact with the LED chip is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved; meanwhile, the silica gel balls provided by the invention are uniformly arranged in a rectangular or rhombic shape, so that the uniform distribution of light rays of a light source in a concentration area can be ensured.
Description
Technical Field
The invention belongs to the technical field of LED packaging, and particularly relates to an LED packaging structure.
Background
The Light-Emitting Diode (LED) has the characteristics of long service life, high luminous efficiency, good color rendering, safety, reliability, rich color and easy maintenance. Under the background of today's increasingly serious environmental pollution, climate warming and energy shortage, semiconductor lighting technology developed based on high-power LEDs has been recognized as one of the most promising high-tech fields in the 21 st century. This is a major leap in the history of human lighting since gas lighting, incandescent lamps and fluorescent lamps, and has rapidly improved the lighting quality of human life.
The high-power LED packaging has complex structure and process and directly influences the service performance and service life of the LED; at present, the packaging process of the existing LED has the following problems.
1. Because the light emitted by the LED light source is generally distributed in a divergent manner, i.e., lambertian distribution, the illumination brightness of the light source is not concentrated enough, and the light is generally shaped secondarily by an external lens to meet the illumination requirement of a specific occasion, which increases the production cost.
2. While phosphor materials are considered to be one of the most important packaging materials affecting the light extraction efficiency of white LED packages, foreign researchers have found that the light scattering properties of phosphors cause a significant portion of normally incident light to be backscattered. In the current high-power LED package, the phosphor is generally coated on the surface of the chip. This direct coating will reduce the light extraction efficiency of the package, since the chip absorbs the backscattered light. In addition, the fluorescent powder is directly coated on the chip, and the quantum efficiency of the fluorescent powder is obviously reduced due to the high temperature generated by the chip, so that the luminous efficiency of the package is seriously influenced.
3. The safe junction temperature of the LED chip during working is within 110 ℃, if the junction temperature is too high, a series of problems of light intensity reduction, spectrum deviation, color temperature rise, thermal stress increase, accelerated chip aging and the like can be caused, the service life of the LED is greatly reduced, and meanwhile, the accelerated aging of the packaging adhesive colloid filled on the chip can be caused, so that the light transmission efficiency of the LED is influenced.
Disclosure of Invention
In order to improve the working performance of the LED chip, the invention provides an LED packaging structure; the technical problem to be solved by the invention is realized by the following technical scheme:
an embodiment of the present invention provides an LED package structure, including:
an LED chassis 11;
the first silica gel layer 12 is arranged on the LED bottom plate 11;
a lens region 13 disposed on the first silica gel layer 12;
and the second silica gel layer 14 is arranged on the first silica gel layer 12 and the lens area 13.
In one embodiment of the present invention, the LED base plate 11 includes a heat dissipation substrate and LED chips disposed on the heat dissipation substrate.
In one embodiment of the present invention, a circular groove is provided in the heat-dissipating substrate in the width direction.
In one embodiment of the invention, the central axis of the circular groove forms a certain included angle with the plane of the heat dissipation substrate; wherein the diameter of the circular groove is 0.2-1 mm, the distance between the circular grooves is 0.5-10 mm, and the included angle range is 1-10 degrees.
In an embodiment of the present invention, the lens region 13 includes a plurality of rectangular or rhombic silica gel balls uniformly distributed.
In one embodiment of the invention, the diameter of the silica gel ball is 10-200 microns.
In one embodiment of the present invention, the second silicone gel layer 14 is a hemispherical silicone gel layer covering the whole of the first silicone gel layer 12 and the lens region 13.
In an embodiment of the present invention, the silica gel of the first silica gel layer 12 does not contain phosphor, and the silica gel of the lens region 13 and the second silica gel layer 14 contains phosphor.
In one embodiment of the present invention, the phosphors are red, green and blue phosphors.
In one embodiment of the present invention, the LED chip is an ultraviolet LED chip.
Compared with the prior art, the invention has the following beneficial effects:
1. the fluorescent powder of the LED packaging structure is separated from the LED chip, so that the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved; the silica gel contacted with the LED chip is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved.
2. According to the LED packaging structure provided by the invention, the lens is formed in the silica gel by utilizing the characteristics of different silica gels and fluorescent powder gels that the refractive indexes are different, so that the problem of light emission dispersion of an LED chip is solved, and light emitted by a light source can be more concentrated; the refractive index of the lower layer silica gel is smaller than that of the outer layer silica gel, the refractive index of the silica gel ball material is larger than that of the lower layer silica gel and that of the outer layer silica gel, total reflection can be effectively inhibited, and more light rays of the LED chip can be irradiated out through the packaging material.
3. The silica gel balls provided by the invention can be uniformly arranged in a rectangular shape or in a rhombic shape. The light of light source can be guaranteed and evenly distributed in the concentration district.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Fig. 1 is a schematic view of an LED package structure according to an embodiment of the invention;
fig. 2 is a schematic view of an LED package heat dissipation substrate according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of an ultraviolet LED chip according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method for packaging an LED according to another embodiment of the present invention;
FIGS. 5 a-5 b are schematic diagrams of ball lens profiles provided by another embodiment of the present invention;
fig. 6 is a schematic view of a high light-transmission LED package structure according to still another embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic view of an LED package structure according to an embodiment of the present invention, including:
an LED chassis 11;
the first silica gel layer 12 is arranged on the LED bottom plate 11;
a lens region 13 disposed on the first silica gel layer 12;
and the second silica gel layer 14 is arranged on the first silica gel layer 12 and the lens area 13.
Specifically, the refractive index of the silica gel of the first silica gel layer 12 is smaller than the refractive index of the silica gel of the second silica gel layer 14, and the refractive index of the silica gel of the lens region 13 is larger than the refractive indexes of the silica gel of the first silica gel layer 12 and the second silica gel layer 14.
Specifically, the LED base plate 11 includes a heat dissipation substrate and LED chips disposed on the heat dissipation substrate.
Further, referring to fig. 2, fig. 2 is a schematic view of an LED package heat dissipation substrate according to an embodiment of the present invention, wherein a circular groove is formed in the heat dissipation substrate along a width direction. The central axis of the circular groove and the plane of the heat dissipation substrate form a certain included angle; wherein, the diameter of the circular groove is 0.2-1 mm, the distance between the circular grooves is 0.5-10 mm, and the included angle range is 1-10 degrees.
The radiating substrate provided with the inclined circular groove is adopted, so that the cost of the radiating substrate is reduced while the strength is almost unchanged; meanwhile, a channel for air circulation is added, the heat convection rate of air is improved by utilizing the chimney effect, and the heat dissipation effect is improved.
Preferably, the lens region 13 includes a plurality of rectangular or rhombic silica gel balls uniformly distributed.
Wherein, the silica gel ball is rectangle align to grid or rhombus is arranged, can guarantee that the light of light source evenly distributed in concentrated district
Preferably, the diameter of the silica gel ball is 10-200 microns.
Specifically, the second silicone gel layer 14 is a hemispherical silicone gel layer covering the entire first silicone gel layer 12 and the lens region 13.
Preferably, the silica gel of the first silica gel layer 12 does not contain phosphor, and the silica gel of the lens region 13 and the second silica gel layer 14 contains phosphor.
Specifically, the fluorescent powder is red, green and blue fluorescent powder.
Preferably, the LED chip is an ultraviolet LED chip.
Specifically, referring to fig. 3, fig. 3 is a schematic structural diagram of an ultraviolet LED chip according to an embodiment of the present invention, where the ultraviolet LED chip sequentially includes, from bottom to top, a sapphire substrate 201, an N-type AlGaN layer 202, and AlxGa1-xN/AlyGa1-yThe N multi-quantum well structure 203, the P type AlGaN barrier layer 204 and the P type GaN layer 205; and a positive electrode 206 disposed on the surface of the P-type GaN layer 205 and a negative electrode 207 disposed on the surface of the N-type AlGaN layer 202.
In the LED package structure provided in this embodiment, the silica gel of the first silica gel layer on the LED chip does not contain phosphor, and the silica gel of the lens region and the second silica gel layer contains phosphor; the process of separating the fluorescent powder from the LED chip is adopted, so that the problem of the reduction of the quantum efficiency of the fluorescent powder caused by high temperature is solved; the silica gel contacted with the LED chip is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved. Meanwhile, the silica gel refractive index of the first silica gel layer is smaller than that of the second silica gel layer in the embodiment, and the silica gel refractive index of the lens area is larger than that of the first silica gel layer and that of the second silica gel layer, so that total reflection can be effectively inhibited, and more light rays of the LED chip can be ensured to irradiate out through the packaging material.
Example two
Referring to fig. 4, fig. 4 is a flowchart of an LED packaging method according to another embodiment of the present invention, and the present embodiment describes the packaging method of the LED packaging structure in detail based on the above embodiments as follows. Specifically, the method comprises the following steps:
s21, selecting an LED chip;
s22, selecting a support and a heat dissipation substrate;
s23, welding the LED chip on the heat dissipation substrate;
s24, coating a first silica gel layer above the LED chip;
s25, preparing fluorescent powder glue;
s26, preparing a lens area;
s27, coating outer layer fluorescent powder glue above the lens area; forming a second silica gel layer on the outer layer of the fluorescent powder glue by adopting a hemispherical die; to complete the LED package.
Preferably, the LED chip is an ultraviolet LED chip.
Specifically, step S22 may include:
s221, selecting a support and a heat dissipation substrate;
s222, cleaning the support and the heat dissipation substrate;
and S223, drying the support and the heat dissipation substrate.
Preferably, the heat dissipation substrate is made of copper materials, the thickness of the heat dissipation substrate is larger than 0.5 mm and smaller than 10 mm, a circular groove is formed in the heat dissipation substrate along the width direction, a certain included angle is formed between the central axis of the circular groove and the plane of the heat dissipation substrate, and the included angle ranges from 1 degree to 10 degrees; the diameter of the circular groove in the heat dissipation substrate is 0.2-1 mm, and the distance between the circular grooves is 0.5-10 mm;
the middle inclined circular groove is adopted, so that the cost of the radiating substrate is reduced while the strength is almost unchanged; meanwhile, a channel for air circulation is added, the heat convection rate of air is improved by utilizing the chimney effect, and the heat dissipation effect is improved.
Specifically, step S23 may include:
s231, printing solder and checking the die bonding of the solder:
s232, welding the LED chip on the radiating substrate by adopting a reflow soldering process, and installing the radiating substrate on the bracket.
Specifically, step S25 may include:
s251, selecting fluorescent powder and silica gel;
s252, mixing the fluorescent powder and the silica gel to form fluorescent powder gel;
s253, carrying out color test on the fluorescent powder glue;
and S254, baking the fluorescent powder glue.
Further, the fluorescent powder is red, green and blue; namely, the fluorescent powder glue contains three kinds of fluorescent powder of red, green and blue;
the fluorescent powder glue can continuously adjust the color of light by changing the content of red, green and blue fluorescent powder, can also be changed into any color except white light, and can also adjust the color temperature of a light source.
Preferably, step S26 may include:
s261, forming a lower hemispherical groove on the first silica gel layer by using a hemispherical mold;
s262, baking the mixture with a mold for 15 to 60 minutes at the temperature of between 90 and 125 ℃; removing the die after baking;
s263, coating fluorescent powder glue on the first silica gel layer, wherein the lower hemispherical groove is filled with the fluorescent powder glue and is higher than the first silica gel layer by a height not less than the radius of the lower hemispherical groove;
and S264, forming an upper hemisphere on the fluorescent powder glue by adopting a hemispherical mold, wherein the upper hemisphere and the lower hemisphere are filled with the fluorescent powder glue to form a lens area, and the lens area comprises a plurality of rectangular or rhombic silica gel balls.
S265, baking the blank with a mold for 15 to 60 minutes at the temperature of between 90 and 125 ℃; and removing the die after baking is finished.
Specifically, referring to fig. 5a to 5b, fig. 5a to 5b are schematic diagrams illustrating distribution of silica gel spheres according to another embodiment of the present invention, in fig. 5a, the silica gel spheres are uniformly distributed between the first silica gel layer and the outer layer of phosphor glue in a rectangular shape; in fig. 5b, the silica gel balls are uniformly distributed between the first silica gel layer and the outer layer of the phosphor glue in a diamond shape.
Wherein, the silica gel balls can be uniformly arranged in a rectangular shape or staggered in a rhombic shape; the light of light source can be guaranteed and evenly distributed in the concentration district.
Furthermore, the diameter of the silica gel ball is 10-200 microns, and the distance between the silica gel balls is 10-200 microns;
further, step S27 may include:
s271, coating outer layer fluorescent powder glue above the lens area and the first silica gel layer; forming a second silica gel layer on the outer layer of the fluorescent powder glue by adopting a hemispherical die;
s272, baking the belt mold for 15-60 minutes at the temperature of 90-125 ℃; removing the die after baking;
s273, baking for 4-12 hours at the temperature of 100-150 ℃ to finish the LED packaging.
Specifically, step S27 is followed by: and detecting and packaging the LED packaging structure.
According to the LED packaging structure provided by the embodiment, the first silica gel layer is added in the fluorescent powder and the LED chip, and the first silica gel layer is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved; meanwhile, the first silica gel layer enables the fluorescent powder to be separated from the LED chip, and the problem that the quantum efficiency of the fluorescent powder is reduced due to high temperature is solved. The silica gel ball provided by the method contains fluorescent powder, so that part of the light source of the ultraviolet light is changed into red, yellow and blue light in the secondary adjustment process.
EXAMPLE III
Further, referring to fig. 6, fig. 6 is a schematic view of a high light-transmission LED package structure according to still another embodiment of the present invention, and the LED package structure provided in this embodiment is formed by the method provided in the above embodiment. Specifically, the LED package structure includes: the LED module comprises a heat dissipation substrate 31, an LED chip 32, a first silica gel layer 33, a lens area 34 and a second silica gel layer 35 from bottom to top in sequence.
Specifically, the first silica gel layer 33 is silica gel containing no phosphor; the first silica gel layer 33 does not contain fluorescent powder, so that the fluorescent powder is separated from the LED chip, and the problem of reduction of quantum efficiency of the fluorescent powder caused by high temperature is solved.
Specifically, the refractive indexes of the silica gel in the first silica gel layer 33, the second silica gel layer 35, and the lens region 34 are sequentially increased.
Wherein, the thickness of the first silica gel layer 33 is 10 μm to 110 μm, and the thickness of the second silica gel layer 35 is 50 μm to 500 μm.
In addition, the radius R of the silica gel balls in the lens region 34 is preferably 5 μm to 100 μm, and the ball pitch A is preferably 5 μm to 100 μm.
The LED packaging structure that this embodiment provided adopts the three-layer design on first silica gel layer, lens district and second silica gel layer, and the refracting index of silica gel increases in proper order in first silica gel layer 33, second silica gel layer 35 and the lens district 34, can guarantee that the light source of LED chip can be more shine away through encapsulating material.
In summary, the principle and embodiments of the present invention are explained herein by using specific examples, and the above descriptions of the examples are only used to help understanding the present invention and its core ideas; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (7)
1. An LED package structure, comprising:
an LED chassis (11);
the first silica gel layer (12) is arranged on the LED bottom plate (11) and is made of high-temperature-resistant silica gel;
a lens region (13) arranged on the first silica gel layer (12);
the second silica gel layer (14) is arranged on the first silica gel layer (12) and the lens area (13);
the lens area (13) comprises a plurality of rectangular or rhombic uniformly distributed silica gel balls; the diameter of the silica gel ball is 10-200 microns, the distance between the silica gel balls is 10-200 microns, the thickness of the first silica gel layer (12) is 10-110 microns, and the thickness of the second silica gel layer (14) is 50-500 microns;
the silica gel of the first silica gel layer (12) does not contain fluorescent powder, and the silica gel of the lens area (13) and the silica gel of the second silica gel layer (14) both contain fluorescent powder;
the silica gel refractive index of first silica gel layer (12) is less than the silica gel refractive index of second silica gel layer (14), the silica gel refractive index of lens district (13) is greater than first silica gel layer (12) with second silica gel layer (14) silica gel refractive index.
2. The package structure according to claim 1, wherein the LED base plate (11) comprises a heat dissipating substrate and LED chips disposed on the heat dissipating substrate.
3. The package structure of claim 2, wherein the heat-dissipating substrate is a copper substrate.
4. The package structure according to claim 3, wherein the heat-dissipating substrate has a circular groove formed therein along a width direction.
5. The package structure of claim 4, wherein the central axis of the circular groove forms an included angle with the plane of the heat dissipation substrate; the diameter of each circular groove is 0.2-1 mm, the distance between the circular grooves is 0.5-10 mm, and the included angle ranges from 1 degree to 10 degrees.
6. The package structure of claim 1, wherein the LED chip is an ultraviolet LED chip.
7. The packaging structure according to claim 6, wherein the ultraviolet LED chip comprises a sapphire substrate (201), an N-type AlGaN layer (202), and Al in sequence from bottom to topxGa1-xN/AlyGa1-yThe GaN-based multi-quantum well structure comprises an N multi-quantum well structure (203), a P type AlGaN barrier layer (204) and a P type GaN layer (205); and a positive electrode (206) arranged on the surface of the P-type GaN layer (205) and a negative electrode (207) arranged on the surface of the N-type AlGaN layer (202).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214208.3A CN108011008B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214208.3A CN108011008B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
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| CN108011008A CN108011008A (en) | 2018-05-08 |
| CN108011008B true CN108011008B (en) | 2020-07-07 |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7353859B2 (en) * | 2004-11-24 | 2008-04-08 | General Electric Company | Heat sink with microchannel cooling for power devices |
| US8764504B2 (en) * | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN203481273U (en) * | 2013-10-09 | 2014-03-12 | 惠州雷士光电科技有限公司 | LED light source module based on AlSiC composite substrate |
| DE102015104220A1 (en) * | 2015-03-20 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device |
| CN107816907A (en) * | 2016-09-13 | 2018-03-20 | 中国科学院工程热物理研究所 | A kind of micro-nano compound structure surface is heat sink and its method for enhanced heat exchange |
| CN208093583U (en) * | 2017-11-28 | 2018-11-13 | 深圳市阿凡达光电科技有限公司 | High-power LED encapsulation structure |
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