CN108011008A - LED encapsulation structure - Google Patents
LED encapsulation structure Download PDFInfo
- Publication number
- CN108011008A CN108011008A CN201711214208.3A CN201711214208A CN108011008A CN 108011008 A CN108011008 A CN 108011008A CN 201711214208 A CN201711214208 A CN 201711214208A CN 108011008 A CN108011008 A CN 108011008A
- Authority
- CN
- China
- Prior art keywords
- silica gel
- layer
- led
- structure according
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The present invention relates to a kind of LED encapsulation structure, which includes：LED bottom plates (11)；First layer of silica gel (12), is arranged on the LED bottom plates (11)；Lens region (13), is arranged on first layer of silica gel (12)；Second layer of silica gel (14), is arranged on first layer of silica gel (12) and the lens region (13).LED encapsulation structure provided by the invention uses fluorescent powder technique separated with LED chip, and the quantum efficiency for solving the problems, such as fluorescent powder caused by high temperature declines；The silica gel contacted with LED chip is heat safe silica gel, solves the problems, such as that light transmittance caused by silica gel aging jaundice declines；Meanwhile silica-gel sphere provided by the invention is rectangular or diamond shape is evenly distributed, it is ensured that the light of light source is uniformly distributed in concentration zones.
Description
Technical field
The invention belongs to LED encapsulation technologies field, more particularly to a kind of LED encapsulation structure.
Background technology
Light emitting diode (Light-Emitting Diode, LED) has long lifespan, luminous efficiency height, colour rendering is good, pacifies
The characteristics of complete reliable, rich in color and easy to maintain.In current environmental pollution getting worse, climate warming and energy growing tension
Background under, be acknowledged as based on the semiconductor illumination technique that great power LED grows up before 21 century most develops
One of high-tech sector of scape.This is from after gas lighting, incandescent lamp and fluorescent lamp, and the mankind illuminate once big winged in history
Jump, improves rapidly the lighting quality of human lives.
High-power LED encapsulation directly influences performance and the service life of LED due to structure and complex process；At present,
There are following problem for the packaging technology of existing LED.
1st, since the light that LED light source is sent generally is distributed in divergence expression, i.e. lambertian distribution, this causes light source brightness of illumination not
It is enough to concentrate, generally require and carry out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion, which increase production
Cost.
2nd, phosphor material powder is considered as to influence one of most important encapsulating material of white-light LED encapsulation efficiency of light extraction, external
Researcher has found that the light scattering characteristic of fluorescent powder make it that significant component of forward entrance light can be by back scattering.Current
In high-power LED encapsulation, fluorescent powder is usually to be applied directly on chip surface.Since chip is for the light of back scattering
There are absorption, and therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation.It is in addition, fluorescent powder is direct
Coated on chip, the high temperature that chip produces can be remarkably decreased the quantum efficiency of fluorescent powder, so as to seriously affect encapsulation
Luminous efficiency.
3rd, the safe junction temperature of LED chip work should can cause light intensity to reduce, spectrum within 110 DEG C, if junction temperature is excessive
A series of problems, such as offset, colour temperature raise, thermal stress increases, chip accelerated ageing, greatly reduces the service life of LED, together
When, the filling encapsulation micelle colloid accelerated ageing of chip top is may further result in, influences its light transmission efficiency.
The content of the invention
In order to improve the working performance of LED chip, the present invention provides a kind of LED encapsulation structure；The invention solves
Technical problem is achieved through the following technical solutions：
The embodiment provides a kind of LED encapsulation structure, including：
LED bottom plates 11；
First layer of silica gel 12, is arranged on the LED bottom plates 11；
Lens region 13, is arranged in first layer of silica gel 12；
Second layer of silica gel 14, is arranged on first layer of silica gel 12 and the lens region 13.
In one embodiment of the invention, the LED bottom plates 11 include heat-radiating substrate and are arranged on heat-radiating substrate
LED chip.
In one embodiment of the invention, circular groove is provided with the width direction in the heat-radiating substrate.
In one embodiment of the invention, the circular groove axis and heat-radiating substrate plane are in a certain angle；Wherein, it is described
Circular groove is 0.2-1 millimeters a diameter of, 0.5-10 millimeters of circular groove spacing, and the angular range is 1-10 degree.
In one embodiment of the invention, the lens region 13 includes several equally distributed silicon of rectangular or diamond shape
Glueballs.
In one embodiment of the invention, a diameter of 10-200 microns of the silica-gel sphere.
In one embodiment of the invention, second layer of silica gel 14 is whole first layer of silica gel 12 of covering and institute
State the hemisphere layer of silica gel of lens region 13.
In one embodiment of the invention, the silica gel of first layer of silica gel 12 is free of fluorescent powder, the lens region 13
Contain fluorescent powder with the silica gel of second layer of silica gel 14.
In one embodiment of the invention, the fluorescent powder is red, green, blue three kinds of fluorescent powders.
In one embodiment of the invention, the LED chip is UV LED chip.
Compared with prior art, the invention has the advantages that：
1st, the fluorescent powder of LED encapsulation structure provided by the invention is separated with LED chip, solves fluorescent powder caused by high temperature
Quantum efficiency decline the problem of；The silica gel contacted with LED chip is heat safe silica gel, solves silica gel aging jaundice and causes
Light transmittance decline the problem of.
2nd, LED encapsulation structure provided by the invention, using variety classes silica gel it is different with phosphor gel refractive index the characteristics of,
Lens are formed in silica gel, improves LED chip and shines the problem of scattered, the light that light source is sent more is concentrated；Wherein, under
Layer silica gel refractive index is less than outer layer silica gel, and the refractive index of silica gel ball material is more than lower floor and outer layer silica gel refractive index, can be effective
Suppress total reflection, it is ensured that the light of LED chip can more shine out through encapsulating material.
3rd, silica-gel sphere provided by the invention can be with rectangular evenly distributed, or diamond array.It can ensure the light of light source
Line is uniformly distributed in concentration zones.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill of field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
By the detailed description below with reference to attached drawing, other side of the invention and feature become obvious.But it should know
Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they only try hard to concept
Ground illustrates structure and flow described herein.
Fig. 1 is the LED encapsulation structure schematic diagram that one embodiment of the invention provides；
Fig. 2 is the LED package cooling substrate schematic diagrams that one embodiment of the invention provides；
Fig. 3 is the structure diagram for the UV LED chip that one embodiment of the invention provides；
Fig. 4 is the LED encapsulation method flow chart that another embodiment of the present invention provides；
Fig. 5 a- Fig. 5 b are the sphere lens distribution schematic diagram that another embodiment of the present invention provides；
Fig. 6 is the high printing opacity LED encapsulation structure schematic diagram that yet another embodiment of the invention provides.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is the LED encapsulation structure schematic diagram that one embodiment of the invention provides, including：
LED bottom plates 11；
First layer of silica gel 12, is arranged on the LED bottom plates 11；
Lens region 13, is arranged in first layer of silica gel 12；
Second layer of silica gel 14, is arranged on first layer of silica gel 12 and the lens region 13.
Specifically, the silica gel refractive index of the first layer of silica gel 12 is less than the silica gel refractive index of the second layer of silica gel 14, lens region 13
Silica gel refractive index be more than 14 silica gel refractive index of the first layer of silica gel 12 and the second layer of silica gel.
Specifically, the LED bottom plates 11 include heat-radiating substrate and the LED chip being arranged on heat-radiating substrate.
Further, Fig. 2, the LED package cooling substrate schematic diagrams that Fig. 2 provides for one embodiment of the invention, institute are referred to
State and be provided with circular groove in heat-radiating substrate in the width direction.The circular groove axis and heat-radiating substrate plane are in a certain angle；Wherein, institute
State that circular groove is 0.2--1 millimeters a diameter of, 0.5-10 millimeters of circular groove spacing, the angular range is 1-10 degree.
Wherein, using the heat-radiating substrate for being provided with oblique circular groove, while intensity has almost no change, heat dissipation base is reduced
Plate cost；Increase the passage of air circulation at the same time, using the thermal convection current speed of stack effect lifting air, add heat dissipation effect
Fruit.
Preferably, the lens region 13 includes several equally distributed silica-gel spheres of rectangular or diamond shape.
Wherein, silica-gel sphere is rectangular evenly distributed or diamond array, it is ensured that the light of light source is uniform in concentration zones
Distribution
Preferably, a diameter of 10-200 microns of the silica-gel sphere.
Specifically, second layer of silica gel 14 is whole first layer of silica gel 12 of covering and the hemisphere of the lens region 13
Layer of silica gel.
Preferably, the silica gel of first layer of silica gel 12 is free of fluorescent powder, the lens region 13 and second layer of silica gel
14 silica gel contains fluorescent powder.
Specifically, the fluorescent powder is red, green, blue three kinds of fluorescent powders.
Preferably, the LED chip is UV LED chip.
Specifically, Fig. 3, the structure diagram for the UV LED chip that Fig. 3 provides for one embodiment of the invention, institute be refer to
State UV LED chip includes Sapphire Substrate 201, N-type AlGaN layer 202, Al successively from lower to upperxGa1-xN/AlyGa1-yN volumes
Sub- well structure 203, p-type AlGaN barrier layers 204, p-type GaN layer 205；And it is arranged at 205 surface of p-type GaN layer just
Electrode 206 and the negative electrode 207 for being arranged at 202 surface of N-type AlGaN layer.
LED encapsulation structure provided in this embodiment, the silica gel of the first layer of silica gel in LED chip are free of fluorescent powder, lens
The silica gel of area and the second layer of silica gel contains fluorescent powder；Using fluorescent powder technique separated with LED chip, solve caused by high temperature
The problem of quantum efficiency of fluorescent powder declines；The silica gel contacted with LED chip is heat safe silica gel, solves silica gel aging hair
The problem of light transmittance caused by Huang declines.Meanwhile the silica gel refractive index of the first layer of silica gel is less than the second layer of silica gel in the present embodiment
Silica gel refractive index, the silica gel refractive index of lens region is more than the first layer of silica gel and the second layer of silica gel silica gel refractive index, can be effective
Suppress total reflection, it is ensured that the light of LED chip can more shine out through encapsulating material.
Embodiment two
Fig. 4 is refer to, Fig. 4 is the LED encapsulation method flow chart that another embodiment of the present invention provides, and the present embodiment is above-mentioned
On the basis of embodiment, to the present invention LED encapsulation structure method for packing be described in detail it is as follows.Specifically, including such as
Lower step：
S21, choose LED chip；
S22, choose stent and heat-radiating substrate；
S23, by the LED chip be welded in the heat-radiating substrate；
S24, apply the first layer of silica gel above the LED chip；
S25, configuration phosphor gel；
S26, prepare lens region；
S27, apply outer layer phosphor gel above the lens region；And using hemispherical in the outer layer fluorescent powder
The second layer of silica gel is formed on glue；To complete the LED encapsulation.
Preferably, the LED chip is UV LED chip.
Specifically, step S22 can include：
S221, choose stent and heat-radiating substrate；
S222, clean the stent and the heat-radiating substrate；
S223, toast the stent and the heat-radiating substrate and do.
Preferably, the heat-radiating substrate uses copper product, and thickness is more than 0.5 millimeter, less than 10 millimeters, in heat-radiating substrate
Circular groove is formed in the width direction, and circular groove axis and heat-radiating substrate plane are in a certain angle, and angular range is 1-10 degree；Heat-radiating substrate
In circular groove is 0.2--1 millimeters a diameter of, 0.5-10 millimeters of circular groove spacing；
Wherein, by the way of middle tiltedly circular groove, while intensity has almost no change, reduce heat-radiating substrate into
This；Increase the passage of air circulation at the same time, using the thermal convection current speed of stack effect lifting air, add heat dissipation effect.
Specifically, step S23 can include：
S231, printing solder and the die bond for examining the solder：
S232, using solder reflow process, the LED chip is welded in the heat-radiating substrate, and by the heat dissipation base
Plate is installed on the stent..
Specifically, step S25 can include：
S251, choose fluorescent powder and silica gel；
S252, by the fluorescent powder and the silica gel carry out being mixed to form phosphor gel；
S253, carry out color measurement to the phosphor gel；
S254, toast the phosphor gel.
Further, the fluorescent powder is red, green, blue three kinds of fluorescent powders；I.e. described phosphor gel contain it is red,
Green, blue three kinds of fluorescent powders；
Wherein, the phosphor gel can be by varying red, green, the content of blue three kinds of fluorescent powders, can be continuous
The color of light is adjusted, in addition to white light, random color can also be become, while the colour temperature of light source can also be adjusted.
Preferably, step S26 can include：
S261, using hemispherical form lower semisphere groove in first layer of silica gel；
S262, at a temperature of 90-125 DEG C, band mould toast 15-60 minutes；Remove mould after the completion of baking；
S263, the coating fluorescent powder glue in first layer of silica gel, wherein, the phosphor gel fills up the lower half ball impression
Groove, and higher than height of first layer of silica gel not less than the lower semisphere groove radius；
S264, using hemispherical form episphere in the phosphor gel, wherein, the episphere with it is described under
Hemisphere fills up phosphor gel and forms lens region, and the lens region includes the silica-gel sphere of several rectangular or diamond shape distributions.
S265, at a temperature of 90-125 DEG C, band mould toast 15-60 minutes；Remove mould after the completion of baking.
Specifically, it is that the silica-gel sphere distribution that another embodiment of the present invention provides is shown to refer to Fig. 5 a- Fig. 5 b, Fig. 5 a- Fig. 5 b
It is intended to, silica-gel sphere described in Fig. 5 a is rectangular to be uniformly distributed between first layer of silica gel and the outer layer phosphor gel；Figure
Silica-gel sphere described in 5b, which assumes diamond in shape, to be uniformly distributed between first layer of silica gel and the outer layer phosphor gel.
Wherein, silica-gel sphere can be with rectangular evenly distributed, or diamond staggering ordered；It can ensure that the light of light source is collecting
Middle area is uniformly distributed.
Further, the silica-gel sphere is 10-200 microns a diameter of, and spacing is 10-200 microns；
Further, step S27 can include：
S271, apply outer layer phosphor gel above the lens region and first layer of silica gel；And use hemispherical mould
Tool forms the second layer of silica gel in the outer layer phosphor gel；
S272, at a temperature of 90-125 DEG C, band mould toast 15-60 minutes；Remove mould after the completion of baking；
S273, at a temperature of 100-150 DEG C, encapsulated when baking 4-12 is small with completing the LED.
Specifically, further included after step S27：Packaging is detected to the LED encapsulation structure.
LED encapsulation structure provided in this embodiment increases the first layer of silica gel, the first layer of silica gel in fluorescent powder and LED chip
For heat safe silica gel, solve the problems, such as that light transmittance caused by silica gel aging jaundice declines；Meanwhile first layer of silica gel make fluorescence
Powder is separated with LED chip, and the quantum efficiency for solving the problems, such as fluorescent powder caused by high temperature declines.And the silica gel that this method provides
Contain fluorescent powder in ball so that ultraviolet light part light source during secondary adjustment becomes red, yellow, blue light.
Embodiment three
Further, Fig. 6 is refer to, Fig. 6 is the high printing opacity LED encapsulation structure signal that yet another embodiment of the invention provides
Figure, LED encapsulation structure provided in this embodiment are prepared by the method that above-described embodiment provides and formed.Specifically, LED encapsulation structure
Including：Include heat-radiating substrate 31, LED chip 32, the first layer of silica gel 33,34 and second layer of silica gel of lens region successively from lower to upper
35。
Specifically, the first layer of silica gel 33 is the silica gel without fluorescent powder；Wherein, the first layer of silica gel 33 is free of fluorescent powder, makes
Fluorescent powder is separated with LED chip, and the quantum efficiency for solving the problems, such as fluorescent powder caused by high temperature declines.
Specifically, the refractive index of silica gel increases successively in the first layer of silica gel 33, the second layer of silica gel 35 and lens region 34.
Wherein, the thickness of the first layer of silica gel 33 is 10 μm~110 μm, and the thickness of the second layer of silica gel 35 is 50 μm~500 μm.
In addition, the radius R of silica-gel sphere is preferably 5 μm~100 μm in lens region 34, and ball spacing A is preferably 5 μm~100 μ
m。
LED encapsulation structure provided in this embodiment, is set using three layers of the first layer of silica gel, lens region and the second layer of silica gel
Count, the refractive index of silica gel increases successively in the first layer of silica gel 33, the second layer of silica gel 35 and lens region 34, it is ensured that LED core
The light source of piece can more shine out through encapsulating material.
In conclusion specific case used herein is set forth the principle of the present invention and embodiment, the above
The explanation of embodiment is only intended to help and understands the present invention and its core concept；Meanwhile for those of ordinary skill in the art,
According to the thought of the present invention, there will be changes in specific embodiments and applications, in conclusion in this specification
Appearance should not be construed as limiting the invention, and protection scope of the present invention should be subject to appended claim.
Claims (10)
- A kind of 1. LED encapsulation structure, it is characterised in that including：LED bottom plates (11)；First layer of silica gel (12), is arranged on the LED bottom plates (11)；Lens region (13), is arranged on first layer of silica gel (12)；Second layer of silica gel (14), is arranged on first layer of silica gel (12) and the lens region (13).
- 2. encapsulating structure according to claim 1, it is characterised in that the LED bottom plates (11) include heat-radiating substrate and set The LED chip being placed on heat-radiating substrate.
- 3. encapsulating structure according to claim 2, it is characterised in that the heat-radiating substrate is copper base.
- 4. encapsulating structure according to claim 3, it is characterised in that be provided with circle in the width direction in the heat-radiating substrate Groove.
- 5. encapsulating structure according to claim 4, it is characterised in that the circular groove axis is in the heat-radiating substrate plane Certain angle；Wherein, the circular groove is 0.2~1 millimeter a diameter of, 0.5~10 millimeter of spacing between the circular groove, the angle Scope is 1~10 degree.
- 6. encapsulating structure according to claim 1, it is characterised in that the lens region (13) include several it is rectangular or The equally distributed silica-gel sphere of diamond shape.
- 7. encapsulating structure according to claim 6, it is characterised in that a diameter of 10~200 microns of the silica-gel sphere.
- 8. encapsulating structure according to claim 1, it is characterised in that the silica gel of first layer of silica gel (12) is free of fluorescence The silica gel of powder, the lens region (13) and second layer of silica gel (14) contains fluorescent powder.
- 9. encapsulating structure according to claim 1, it is characterised in that the LED chip is UV LED chip.
- 10. encapsulating structure according to claim 9, it is characterised in that the UV LED chip includes successively from lower to upper Sapphire Substrate (201), N-type AlGaN layer (202), AlxGa1-xN/AlyGa1-yN multi-quantum pit structures (203), p-type AlGaN resistances Barrier (204), p-type GaN layer (205)；And it is arranged at the positive electrode (206) on p-type GaN layer (205) surface and is arranged at The negative electrode (207) on N-type AlGaN layer (202) surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214208.3A CN108011008B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214208.3A CN108011008B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108011008A true CN108011008A (en) | 2018-05-08 |
| CN108011008B CN108011008B (en) | 2020-07-07 |
Family
ID=62054195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711214208.3A Active CN108011008B (en) | 2017-11-28 | 2017-11-28 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108011008B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101103659A (en) * | 2004-11-24 | 2008-01-09 | 通用电气公司 | Heat sink with microchannel cooling for power devices |
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN203481273U (en) * | 2013-10-09 | 2014-03-12 | 惠州雷士光电科技有限公司 | LED light source module based on AlSiC composite substrate |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
| CN107816907A (en) * | 2016-09-13 | 2018-03-20 | 中国科学院工程热物理研究所 | A kind of micro-nano compound structure surface is heat sink and its method for enhanced heat exchange |
| CN208093583U (en) * | 2017-11-28 | 2018-11-13 | 深圳市阿凡达光电科技有限公司 | High-power LED encapsulation structure |
-
2017
- 2017-11-28 CN CN201711214208.3A patent/CN108011008B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101103659A (en) * | 2004-11-24 | 2008-01-09 | 通用电气公司 | Heat sink with microchannel cooling for power devices |
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN203481273U (en) * | 2013-10-09 | 2014-03-12 | 惠州雷士光电科技有限公司 | LED light source module based on AlSiC composite substrate |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
| CN107816907A (en) * | 2016-09-13 | 2018-03-20 | 中国科学院工程热物理研究所 | A kind of micro-nano compound structure surface is heat sink and its method for enhanced heat exchange |
| CN208093583U (en) * | 2017-11-28 | 2018-11-13 | 深圳市阿凡达光电科技有限公司 | High-power LED encapsulation structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108011008B (en) | 2020-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107990267A (en) | A kind of solar LED Lawn lamp | |
| CN208256718U (en) | A kind of encapsulating structure of LED | |
| CN208093583U (en) | High-power LED encapsulation structure | |
| CN107994113A (en) | A kind of high-power blue-ray LED multilayer encapsulation structure | |
| CN108011008A (en) | LED encapsulation structure | |
| CN107968136A (en) | LED encapsulation method and structure | |
| CN107833948A (en) | LED encapsulation structure and its method | |
| CN207674291U (en) | Energy saving high-power LED mine lamp | |
| EP2416359A2 (en) | Warm white light led lamp with high luminance and high color rendering index | |
| CN108011022B (en) | LED lamp and LED packaging method | |
| CN208142220U (en) | A kind of White-light LED package structure | |
| CN208315591U (en) | A kind of encapsulating structure of LED | |
| CN208028086U (en) | High-power LED encapsulation structure | |
| CN107833946A (en) | A kind of LED encapsulation method | |
| CN108011011A (en) | A kind of encapsulating structure of LED | |
| CN108011016B (en) | A kind of LED encapsulation structure | |
| CN207705239U (en) | A kind of LED encapsulation structure | |
| CN108011019B (en) | LED packaging method | |
| CN108011026A (en) | A kind of great power LED bilayer semiglobe packaging technology | |
| CN107946442A (en) | LED package and high transparency LED light | |
| CN107819064A (en) | LED encapsulation structure | |
| CN108006490A (en) | Led tunnel lamp | |
| CN107946436B (en) | A kind of White-light LED package structure | |
| CN107833947B (en) | LED packaging method | |
| CN208507727U (en) | LED encapsulation structure and high spotlight LED lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210105 Address after: 427200 Cili industrial concentration area, Zhangjiajie City, Hunan province (ten plate village, zero Yang Town, Cili county) Patentee after: Zhangjiajie Zhenhong Lighting Co.,Ltd. Address before: 710065 Xi'an new hi tech Zone, Shaanxi, No. 86 Gaoxin Road, No. second, 1 units, 22 stories, 12202 rooms, 51, B block. Patentee before: Xi'an Cresun Innovation Technology Co.,Ltd. |