CN108011019B - LED packaging method - Google Patents

LED packaging method Download PDF

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Publication number
CN108011019B
CN108011019B CN201711216256.6A CN201711216256A CN108011019B CN 108011019 B CN108011019 B CN 108011019B CN 201711216256 A CN201711216256 A CN 201711216256A CN 108011019 B CN108011019 B CN 108011019B
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silica gel
layer
hemispherical
led
heat dissipation
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CN108011019A (en
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张亮
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Langfang Yunhang Technology Co.,Ltd.
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Langfang Yuanchi Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Abstract

The invention relates to an LED packaging method, which comprises the following steps: selecting a heat dissipation substrate; welding an ultraviolet chip on the heat dissipation substrate by using a welding process; growing a lower layer of silica gel on the ultraviolet chip; growing a spherical silica gel lens on the lower layer silica gel; and growing an upper layer of silica gel on the spherical silica gel lens to finish the packaging of the LED. According to the LED packaging structure, the iron heat dissipation substrate with the through hole structure is adopted, so that the heat dissipation effect of an LED is improved, the spherical silica gel lens structure is adopted, the LED chip can be ensured to be irradiated out through the packaging material, and the light transmittance is improved.

Description

LED packaging method
Technical Field
the invention relates to the technical field of LED packaging, in particular to an LED packaging method.
Background
As a novel solid-state light source, the LED has the advantages of small volume, high luminous efficiency, low energy consumption, long service life, no mercury pollution, full solid state, quick response, low working voltage, safety, reliability and the like, has very wide application prospect and market economic benefit in the fields of illumination, display and the like, is expected to become a new generation green environment-friendly illumination light source for replacing the existing fluorescent lamp and incandescent lamp, and is widely concerned by researchers at home and abroad.
in recent years, the LED mostly adopts a blue light wick and yellow fluorescence to generate white light to realize illumination, and the method has the following problems.
firstly, the light emitted by the LED light source is generally distributed in a divergent manner, i.e., lambertian distribution, so that the illumination brightness of the light source is not concentrated enough, and secondary shaping is generally required by an external lens to meet the illumination requirement of a specific occasion, thereby increasing the production cost. Secondly, phosphor materials are considered to be one of the most important packaging materials affecting the light extraction efficiency of LED packages, and foreign researchers have found that the light scattering properties of phosphors cause a significant portion of normally incident light to be backscattered. In the current high-power LED packaging structure, fluorescent powder is generally directly coated on the surface of a chip. Since the chip absorbs the backscattered light, the light extraction efficiency of the package is reduced by the direct coating method, and the quantum efficiency of the phosphor is significantly reduced by the high temperature generated by the chip, which seriously affects the lumen efficiency of the package. Thirdly, only a part of energy in the input power of the LED is converted into light energy, and the rest of energy is converted into heat energy, so how to control the energy of the LED chip, especially the LED chip with high power density, is an important problem that LED manufacturing and lamps should solve. Finally, because the high-power LED is used in lighting and other occasions, the cost control is very important, the structural size of the external heat sink of the high-power LED lamp is not allowed to be too large, active heat dissipation in modes of adding an electric fan and the like cannot be allowed, the safe junction temperature of the LED chip in operation is within 110 ℃, if the junction temperature is too high, a series of problems of light intensity reduction, spectrum deviation, color temperature rise, thermal stress increase, chip accelerated aging and the like can be caused, the service life of the LED is greatly reduced, and meanwhile, the accelerated aging of the packaging adhesive colloid filled on the chip can be caused, and the light transmission efficiency of the LED is influenced. At present, most of chips are packaged on a thin metal heat dissipation substrate, and the metal heat dissipation substrate is thin, has small heat capacity and is easy to deform, so that the contact between the metal heat dissipation substrate and the bottom surface of a heat dissipation plate is not tight enough, and the heat dissipation effect is affected.
disclosure of Invention
therefore, in order to solve the technical defects and shortcomings of the prior art, the invention provides an LED packaging method.
Specifically, an embodiment of the present invention provides an LED packaging method, including:
selecting a heat dissipation substrate;
Welding an ultraviolet chip on the heat dissipation substrate by using a welding process;
growing a lower layer of silica gel on the ultraviolet chip;
growing a spherical silica gel lens on the lower layer silica gel;
and growing an upper layer of silica gel on the spherical silica gel lens to finish the packaging of the LED.
In one embodiment of the invention, the heat dissipation substrate is made of iron and has a thickness of 0.5-10 mm.
In one embodiment of the invention, a circular through hole is arranged in the radiating substrate along the width direction and parallel to the plane of the radiating substrate; wherein, the diameter of the circular through holes is 0.2-0.4 mm, and the distance is 0.5-10 mm.
In one embodiment of the present invention, the circular through hole is directly cast or directly drilled in the heat dissipation substrate.
In one embodiment of the present invention, the soldering the ultraviolet chip on the heat dissipation substrate using a soldering process includes:
Printing solder on the ultraviolet chip;
Carrying out die bonding inspection on the ultraviolet chip;
and carrying out reflow soldering on the lead of the ultraviolet chip.
In one embodiment of the present invention, growing a lower layer of silica gel on the uv chip comprises:
coating a first silica gel layer above the ultraviolet chip, wherein the first silica gel layer does not contain fluorescent powder;
forming a hemispherical groove on the first silica gel layer by using a first hemispherical mold;
baking the first silica gel layer with the first hemispherical mold for 15-60 min at the temperature of 90-125 ℃;
And removing the first hemispherical mold to form the lower layer of silica gel.
in one embodiment of the invention, growing a spherical silica gel lens on the underlying silica gel comprises:
Coating a second silica gel layer on the hemispherical groove, wherein the second silica gel layer does not contain fluorescent powder;
forming a first hemispherical silica gel on the second silica gel layer by using a second hemispherical mold;
Baking the second silica gel layer with the hemispherical mold for 15-60 min at the temperature of 90-125 ℃;
And removing the second hemispherical die to form the spherical silica gel lens.
in one embodiment of the present invention, growing an upper layer of silica gel on the spherical silica gel lens comprises:
Coating a third silica gel layer on the spherical silica gel lens, wherein the third silica gel layer contains fluorescent powder;
Forming a second hemispherical silica gel in the third silica gel layer by using a third hemispherical mold;
baking the third silica gel layer with the third hemispherical mold at the temperature of 90-125 ℃ for 15-60 min;
And removing the third hemispherical die to form the upper silica gel layer.
in one embodiment of the present invention, the phosphor is red phosphor, green phosphor, blue phosphor.
In one embodiment of the present invention, the wavelength of the red phosphor is 626nm, the wavelength of the green phosphor is 515nm, and the wavelength of the blue phosphor is 447 nm.
The embodiment of the invention has the following advantages:
1. The heat dissipation substrate in the LED packaging structure is an iron heat dissipation substrate, and the iron heat dissipation substrate has the characteristics of large heat capacity, good heat conduction effect, difficulty in deformation and close contact with a heat dissipation device, so that the heat dissipation effect of the LED packaging structure is improved; in addition, the embodiment of the invention reduces the manufacturing cost while the intensity of the LED is almost unchanged by arranging the through hole in the iron heat dissipation substrate in the LED packaging structure, and can increase the channel for air circulation by using the mode of the middle through hole, fully utilize the heat convection among air and improve the heat dissipation effect of the LED.
2. the fluorescent powder and the LED chip in the LED packaging structure are separated, so that the problem of the reduction of the quantum efficiency of the fluorescent powder caused under the high-temperature condition is solved.
3. the color of light can be continuously adjusted by changing the content of the red, green and blue fluorescent powder in the upper layer of the covering silica gel, and the LED can be changed into any color except for preparing an LED emitting white light; in addition, the color temperature of the light source can also be adjusted in this way.
4. The silica gel in contact with the LED chip in the LED packaging structure is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel under a high-temperature condition is solved.
5. The lens is formed in the silica gel by utilizing the characteristic that different types of silica gel and fluorescent powder gel have different refractive indexes, so that the problem of light emission dispersion of the LED chip is solved, and light emitted by a light source can be more concentrated; through changing the arrangement mode of spherical silica gel lens in the LED packaging structure, can guarantee that the light of light source is in the district evenly distributed of concentrating, the arrangement mode of spherical silica gel lens is rectangle or rhombus and arranges if.
6. The refractive index of the lower layer silica gel adopted by the LED packaging structure prepared by the invention is smaller than that of the upper layer silica gel, and the refractive index of the material of the spherical silica gel lens is larger than that of the lower layer silica gel and the upper layer silica gel.
7. The spherical lens arranged in the LED packaging structure can change the light transmission direction, effectively inhibit the total reflection effect, facilitate more light to be emitted outside the LED, increase the external quantum efficiency of the LED device and improve the luminous efficiency of the LED.
other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
the following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a flowchart of an LED packaging method according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of an LED packaging method according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of an LED package structure according to an embodiment of the invention;
FIG. 4 is a cross-sectional view of another LED package structure according to an embodiment of the present invention;
Fig. 5 is a schematic cross-sectional view of a heat dissipation substrate according to an embodiment of the invention;
FIG. 6 is a schematic cross-sectional view of an ultraviolet lamp according to an embodiment of the present invention;
Fig. 7a is a schematic cross-sectional view of a spherical silica gel lens according to an embodiment of the invention;
Fig. 7b is a schematic cross-sectional view of another spherical silicone lens according to an embodiment of the invention.
Detailed Description
in order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
example one
referring to fig. 1, fig. 1 is a flowchart of an LED packaging method according to an embodiment of the present invention. The method comprises the following steps:
step a, selecting a heat dissipation substrate;
B, welding an ultraviolet chip on the heat dissipation substrate by using a welding process;
c, growing a lower layer of silica gel on the ultraviolet chip;
d, growing a spherical silica gel lens on the lower layer of silica gel;
and e, growing an upper layer of silica gel on the spherical silica gel lens to finish the packaging of the LED.
preferably, the heat dissipation substrate is made of iron and has a thickness of 0.5-10 mm.
preferably, a circular through hole which is parallel to the plane of the heat dissipation substrate along the width direction is arranged in the heat dissipation substrate; wherein, the diameter of the circular through holes is 0.2-0.4 mm, and the distance is 0.5-10 mm.
Preferably, the circular through hole is directly cast or directly drilled on the heat dissipation substrate.
wherein, step b includes:
b1, printing solder on the ultraviolet chip;
step b2, carrying out die bonding inspection on the ultraviolet chip;
And b3, performing reflow soldering on the lead of the ultraviolet chip.
wherein, step c includes:
step c1, coating a first silica gel layer above the ultraviolet chip, wherein the first silica gel layer does not contain fluorescent powder;
step c2, forming a hemispherical groove on the first silica gel layer by using a first hemispherical mold;
Step c3, baking the first silica gel layer with the first hemispherical mold for 15-60 min at the temperature of 90-125 ℃;
And c4, removing the first hemispherical mold to form the lower layer of silica gel.
Wherein, step d includes:
d1, coating a second silica gel layer on the hemispherical groove, wherein the second silica gel layer does not contain fluorescent powder;
d2, forming a first hemispherical silica gel on the second silica gel layer by using a second hemispherical mold;
D3, baking the second silica gel layer with the second hemispherical mold for 15-60 min at 90-125 ℃;
And d4, removing the second hemispherical mold to form the spherical silica gel lens.
Wherein, step e includes:
step e1, coating a third silica gel layer on the spherical silica gel lens, wherein the third silica gel layer contains fluorescent powder;
step e2, forming a second hemispherical silica gel in the third silica gel layer by using a third hemispherical mold;
Step e3, baking the third silica gel layer with the third hemispherical mold for 15-60 min at the temperature of 90-125 ℃;
And e4, removing the third hemispherical die to form the upper silica gel layer.
Preferably, in step e1, the phosphor is red phosphor, green phosphor, or blue phosphor.
preferably, the red phosphor is Y2O2S:Eu3+The green fluorescent powder is BaMgAl10O17:Eu2+,Mn2+the blue phosphor is Sr5(PO4)3Cl:Eu2+the wavelength of the red fluorescent powder is 626nm, the wavelength of the green fluorescent powder is 515nm, and the wavelength of the blue fluorescent powder is 447 nm.
the beneficial effects of the invention are as follows:
The heat dissipation substrate in the LED packaging structure is an iron heat dissipation substrate, and the iron heat dissipation substrate has the characteristics of large heat capacity, good heat conduction effect, difficulty in deformation and close contact with a heat dissipation device, so that the heat dissipation effect of the LED packaging structure is improved; in addition, the embodiment of the invention reduces the manufacturing cost while the intensity of the LED is almost unchanged by arranging the through hole in the iron heat dissipation substrate in the LED packaging structure, and can increase the channel for air circulation by using the mode of the middle through hole, fully utilize the heat convection among air and improve the heat dissipation effect of the LED.
the fluorescent powder and the LED chip in the LED packaging structure are separated, so that the problem of reduction of quantum efficiency of the fluorescent powder caused under a high-temperature condition is solved.
3. the color of light can be continuously adjusted by changing the content of the red, green and blue fluorescent powder in the upper layer of the covering silica gel, and the LED can be changed into any color except for preparing an LED emitting white light; in addition, the color temperature of the light source can also be adjusted in this way.
and 4, the silica gel in the LED packaging structure, which is in contact with the LED chip, is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel under a high-temperature condition is solved.
5. the lens is formed in the silica gel by utilizing the characteristic that different types of silica gel and fluorescent powder gel have different refractive indexes, so that the problem of light emission dispersion of the LED chip is solved, and light emitted by a light source can be more concentrated; through changing the arrangement mode of spherical silica gel lens in the LED packaging structure, can guarantee that the light of light source is in the district evenly distributed of concentrating, the arrangement mode of spherical silica gel lens is rectangle or rhombus and arranges if.
6. The refractive index of the lower layer silica gel adopted by the LED packaging structure prepared by the invention is smaller than that of the upper layer silica gel, and the refractive index of the material of the spherical silica gel lens is larger than that of the lower layer silica gel and the upper layer silica gel.
example two
Referring to fig. 2, fig. 2 is a schematic flow chart illustrating an LED packaging method according to an embodiment of the present invention. On the basis of the above embodiments, the present embodiment will describe the process flow of the present invention in more detail. The method comprises the following steps:
s1, preparing a heat dissipation substrate;
s11, preparing a support/heat dissipation substrate;
specifically, a heat dissipation substrate 101 with the thickness of 0.5-10 mm and made of iron is selected, and the heat dissipation substrate 101 is cut;
s12, cleaning the support/heat dissipation substrate;
specifically, stains, especially oil stains, on the radiating substrate 101 and the support are cleaned;
s13, baking the support/heat dissipation substrate;
specifically, the cleaned heat dissipation substrate 101 and the rack are baked, and the heat dissipation substrate 101 and the rack are kept dry.
Preferably, a circular through hole is formed in the heat dissipation substrate along the width direction and parallel to the plane of the heat dissipation substrate; wherein the number of the circular through holes is n, n is more than or equal to 2, the diameter is 0.2-0.4 mm, and the distance between the circular through holes is 0.5-10 mm;
Preferably, the circular through-hole in the heat dissipation substrate 101 is formed by a direct casting process or a direct drilling manner.
S2, preparing a lamp wick;
s21, printing solder on the ultraviolet chip;
s22, carrying out die bonding inspection on the ultraviolet chip printed with the solder;
s23, soldering the uv chip onto the heat dissipation substrate 101 by using a reflow soldering process.
and S31, gold wire bonding.
S41, checking the welding wire;
Specifically, the gold wire bonding wire is checked, if the gold wire bonding wire is qualified, the next procedure is carried out, and if the gold wire bonding wire is not qualified, the welding is carried out again.
s5, preparing fluorescent powder glue;
s51, dispensing fluorescent powder glue;
Specifically, three kinds of red, green and blue fluorescent powder are prepared, and the red, green and blue fluorescent powder and the third silica gel layer are mixed according to a certain proportion;
S52, carrying out color test on the mixed third silica gel layer;
And S53, baking the mixed third silica gel layer.
Preferably, any color can be prepared by adopting a multilayer distribution mode of the red, green and blue fluorescent powders.
s6, preparing silica gel;
S61, preparing the lower layer silica gel 102;
S611, coating a first silica gel layer above the heat dissipation substrate 101 provided with the ultraviolet chip in a coating mode, wherein the first silica gel layer is a high-temperature-resistant silica gel layer without fluorescent powder;
s612, arranging a first hemispherical mold on the first silica gel layer, and forming a hemispherical groove on the first silica gel layer by using the first hemispherical mold;
s613, baking the first silica gel layer provided with the first hemispherical mold at the temperature of 90-125 ℃ for 15-60 min to solidify the first silica gel layer with the hemispherical groove structure;
and S614, after the baking is finished, removing the first hemispherical mold arranged in the first silica gel layer to form the lower-layer silica gel 102 with the hemispherical groove structure.
s62, preparing the spherical silica gel lens 103;
S621, coating a second silica gel layer on the hemispherical groove of the lower-layer silica gel 102 in a coating mode, wherein the second silica gel layer does not contain fluorescent powder;
s622, arranging a second hemispherical mold on the second silica gel layer, and forming a first hemispherical silica gel with a hemispherical shape in the second silica gel layer by using the second hemispherical mold;
S623, baking the second silica gel layer provided with the second hemispherical mold at the baking temperature of 90-125 ℃ for 15-60 min to solidify the second silica gel layer with the hemispherical structure;
S624, after baking is completed, removing the second hemispherical mold arranged in the second silica gel layer, and forming spherical silica gel lenses 103 by the silica gel in the hemispherical grooves and the first hemispherical silica gel, wherein the diameter of the spherical silica gel lenses 103 is 10-200 microns, and the distance between the spherical silica gel lenses 103 is 10-200 microns;
preferably, the spherical silica gel lenses 103 can also be uniformly arranged in a rectangular or rhombic shape;
s63, preparing the upper layer of silica gel 104.
s631, coating a third silica gel layer above the spherical silica gel lens 103 in a coating mode, wherein the third silica gel layer contains three kinds of red, green and blue fluorescent powder;
S632, arranging a third hemispherical mold in the third silica gel layer, and forming second hemispherical silica gel in the third silica gel layer by using the third hemispherical mold;
s633, baking the third silica gel layer provided with the third hemispherical mold, wherein the baking temperature is 90-125 ℃, and the baking time is 15-60 min, so that the third silica gel layer with the third hemispherical mold is cured;
s634, after the baking is finished, removing the third hemispherical mold arranged in the third silica gel layer to form upper silica gel 104 with a hemispherical structure;
preferably, the red phosphor is Y2O2S:Eu3+the green phosphor is BaMgAl10O17:Eu2+,Mn2+the blue fluorescent powder is Sr5(PO4)3Cl:Eu2+wherein, the wavelength of the red fluorescent powder is 626nm, the wavelength of the green fluorescent powder is 515nm, and the wavelength of the blue fluorescent powder is 447 nm.
S71, long-time baking;
Specifically, baking the heat dissipation substrate 101, the ultraviolet chip, the lower layer of silica gel 102, the spherical silica gel lens 103 and the upper layer of silica gel 104 at the baking temperature of 100-150 ℃ for 4-12 hours to complete the packaging of the LED;
Preferably, the refractive index of the lower layer silica gel 102 is smaller than that of the upper layer silica gel 104, and the refractive index of the spherical silica gel lens 103 is larger than those of the lower layer silica gel 102 and the upper layer silica gel 104.
and S81, testing and sorting the packaged LEDs.
and S82, packaging the LED packaging structure qualified by the test.
EXAMPLE III
Referring to fig. 3, fig. 4, fig. 5, fig. 6, and fig. 7a to fig. 7b, fig. 3 is a schematic cross-sectional view of an LED package structure according to an embodiment of the present invention, fig. 4 is a schematic cross-sectional view of another LED package structure according to an embodiment of the present invention, fig. 5 is a schematic cross-sectional view of a heat dissipation substrate according to an embodiment of the present invention, fig. 6 is a schematic cross-sectional view of an ultraviolet lamp wick according to an embodiment of the present invention, fig. 7a is a schematic cross-sectional view of a spherical silica gel lens according to an embodiment of the present invention, and fig. 7b is a schematic cross-sectional view of another spherical silica gel lens according to an embodiment of. This LED packaging structure includes:
A heat dissipation substrate 101;
As shown in fig. 5, the heat dissipation substrate 101 is made of iron, the thickness D of the heat dissipation substrate 101 is 0.5 to 10mm, circular through holes are formed in the heat dissipation substrate 101, circular through holes along the width W direction are formed in the heat dissipation substrate 101, the central connecting line of the circular through holes is parallel to the plane of the heat dissipation substrate 101, the number of the circular through holes is n, n is greater than or equal to 2, the diameter of the circular through holes is 0.2 to 0.4mm, and the distance between the circular through holes is 0.5 to 10 mm.
An ultraviolet chip formed on the upper surface of the heat dissipation substrate 101;
Wherein, as shown in fig. 6, the ultraviolet lamp wick structure includes: a substrate 201 made of sapphire and disposed on the substrate 201, an N-type AlGaN layer 202 on the N-type AlGaN layer 202, a MQW layer 203 on the N-type AlGaN layer 202, and Al on the MQW layer 203xGaN1-xN/AlyGaN1- yn layer 204 on AlxGaN1-xN/AlyGaN1-ya P-type AlGaN layer 205 on the N-type layer 204, a P-type GaN layer 206 on the P-type AlGaN layer 205, a P-type contact 207 on the P-type GaN layer 206, and an N-type contact 208 on the N-type AlGaN layer 202.
A lower layer of silica gel 102 formed on the upper surface of the ultraviolet chip;
The lower layer of silica gel 102 does not contain fluorescent powder, and the lower layer of silica gel 102 is made of a high temperature resistant material.
an upper layer of silica gel 104 formed on the upper surface of the lower layer of silica gel 102;
as shown in fig. 4, the upper layer silica gel 104 contains three phosphors of red, green, and blue, the upper layer silica gel 104 is in a hemispherical shape, and the refractive index of the upper layer silica gel 104 is greater than that of the lower layer silica gel 102.
The spherical silica gel lens 103, the spherical silica gel lens 103 is positioned at the interface of the lower layer silica gel 102 and the upper layer silica gel 104;
The spherical silica gel lenses 103 do not contain fluorescent powder, the number of the spherical silica gel lenses 103 is n, n is larger than or equal to 2, the diameter is 10-200 mu m, the distance A between the spherical silica gel lenses 103 is 10-200 mu m, and the refractive index of the spherical silica gel lenses 103 is larger than that of the lower-layer silica gel 102 and the upper-layer silica gel 104;
Preferably, as shown in fig. 7a to 7b, the spherical silicone lenses 103 may be uniformly arranged in a rectangular or rhombic shape.
preferably, the spherical silicone lenses 103 may be arranged at unequal intervals.
preferably, the upper layer of silicone 104 has a hemispherical shape, which can maximize the light-emitting angle of the LED.
In summary, the principle and implementation of the LED packaging method provided in the embodiments of the present invention are explained herein by applying specific examples, and the above descriptions of the embodiments are only used to help understand the method of the present invention and its core idea; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.

Claims (7)

1. an LED packaging method, comprising:
selecting a heat dissipation substrate;
Welding an ultraviolet chip on the heat dissipation substrate by using a welding process;
growing a lower layer of silica gel on the ultraviolet chip;
growing a lower layer of silica gel on the ultraviolet chip, comprising:
coating a first silica gel layer above the ultraviolet chip, wherein the first silica gel layer does not contain fluorescent powder;
Forming a hemispherical groove on the first silica gel layer by using a first hemispherical mold;
Baking the first silica gel layer with the first hemispherical mold for 15-60 min at the temperature of 90-125 ℃;
removing the first hemispherical mold to form the lower layer of silica gel, wherein the lower layer of silica gel is high-temperature resistant silica gel; growing a spherical silica gel lens on the lower layer silica gel;
growing a spherical silica gel lens on the lower silica gel, comprising:
Coating a second silica gel layer on the hemispherical groove, wherein the second silica gel layer does not contain fluorescent powder;
Forming a first hemispherical silica gel on the second silica gel layer by using a second hemispherical mold;
baking the second silica gel layer with the hemispherical mold for 15-60 min at the temperature of 90-125 ℃;
removing the second hemispherical die to form the spherical silica gel lenses, wherein the diameter of the spherical silica gel lenses is 10-200 micrometers, and the distance between the spherical silica gel lenses is 10-200 micrometers;
growing upper-layer silica gel on the spherical silica gel lens to complete the packaging of the LED, wherein the spherical silica gel lens is positioned at the interface of the lower-layer silica gel and the upper-layer silica gel, the refractive index of the lower-layer silica gel is smaller than that of the upper-layer silica gel, and the refractive index of the spherical silica gel lens is larger than that of the lower-layer silica gel and that of the upper-layer silica gel;
growing an upper layer of silica gel on the spherical silica gel lens, comprising:
coating a third silica gel layer on the spherical silica gel lens, wherein the third silica gel layer contains fluorescent powder;
forming a second hemispherical silica gel in the third silica gel layer by using a third hemispherical mold;
baking the third silica gel layer with the third hemispherical mold at the temperature of 90-125 ℃ for 15-60 min;
And removing the third hemispherical die to form the upper layer of silica gel.
2. the method of claim 1, wherein the heat-dissipating substrate is made of iron and has a thickness of 0.5 to 10 mm.
3. The method of claim 2, wherein the heat-dissipating substrate is internally provided with a circular through-hole in a width direction and parallel to a plane of the heat-dissipating substrate; wherein, the diameter of the circular through holes is 0.2-0.4 mm, and the distance is 0.5-10 mm.
4. The method of claim 3, wherein the circular through hole is directly cast or drilled in the heat-dissipating substrate.
5. the method of claim 1, wherein soldering a uv chip on the heat-dissipating substrate using a soldering process comprises:
Printing solder on the ultraviolet chip;
Carrying out die bonding inspection on the ultraviolet chip;
and carrying out reflow soldering on the lead of the ultraviolet chip.
6. The method of claim 1, wherein the phosphor is a red phosphor, a green phosphor, a blue phosphor.
7. The method of claim 6, wherein the red phosphor has a wavelength of 626nm, the green phosphor has a wavelength of 515nm, and the blue phosphor has a wavelength of 447 nm.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101103659A (en) * 2004-11-24 2008-01-09 通用电气公司 Heat sink with microchannel cooling for power devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8764504B2 (en) * 2011-02-25 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Lighting device and method for manufacturing the same
DE102015104220A1 (en) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Optoelectronic lighting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101103659A (en) * 2004-11-24 2008-01-09 通用电气公司 Heat sink with microchannel cooling for power devices

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