CN108011019A - A kind of LED encapsulation method - Google Patents
A kind of LED encapsulation method Download PDFInfo
- Publication number
- CN108011019A CN108011019A CN201711216256.6A CN201711216256A CN108011019A CN 108011019 A CN108011019 A CN 108011019A CN 201711216256 A CN201711216256 A CN 201711216256A CN 108011019 A CN108011019 A CN 108011019A
- Authority
- CN
- China
- Prior art keywords
- silica gel
- layer
- hemispherical
- heat
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The present invention relates to a kind of LED encapsulation method, this method includes：Choose heat-radiating substrate；Ultraviolet chip is welded on the heat-radiating substrate using welding procedure；Lower floor's silica gel is grown in the ultraviolet chip；Spherical silica gel lens are grown on lower floor's silica gel；Upper strata silica gel is grown on the spherical silica gel lens to complete the encapsulation of the LED.The LED encapsulation structure of the present invention adds the heat dissipation effect of LED by using the iron heat-radiating substrate with through-hole structure, can ensure that LED chip can preferably shine out through encapsulating material using spherical silica gel lens arrangement, improve the transmissivity of light.
Description
Technical field
The present invention relates to LED encapsulation technologies field, more particularly to a kind of LED encapsulation method.
Background technology
LED has that small, luminous efficiency is high, energy consumption is low, long lifespan, mercury-free are dirty as a kind of new solid state light emitter
Dye, the advantages of all solid state, response is rapid, operating voltage is low, safe and reliable etc. all many-sided, have in the field such as illumination and display
Very wide application prospect and market economy benefit, is expected to become the new generation of green for substituting existing fluorescent lamp and incandescent lamp
Environmental protection lighting light source, thus it is subject to the extensive concern of domestic and international researcher.
In recent years, LED produces white light by the way of blue light wick adds yellow fluorescence more, and to realize illumination, which is deposited
In problems with.
First, the light that LED light source is sent generally is distributed in divergence expression, i.e. lambertian distribution, causes light source brightness of illumination inadequate
Concentrate, generally require and carry out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion, therefore add production
Cost.Secondly, phosphor material powder is considered as to influence one of LED encapsulation most important encapsulating materials of efficiency of light extraction, foreign study
Personnel have found that the light scattering characteristic of fluorescent powder make it that significant component of forward entrance light can be by back scattering.Current big work(
In rate LED encapsulation structure, fluorescent powder is usually to be applied directly to chip surface.Since light of the chip for back scattering exists
Absorption, therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation, in addition, the high temperature meeting that chip produces
It is remarkably decreased the quantum efficiency of fluorescent powder, so as to seriously affect the luminous efficiency of encapsulation.Again, in LED input powers only
The energy of some is converted into luminous energy, remaining energy is then converted into thermal energy, so close for LED chip, especially power
How the very big LED chip of degree, control its energy, is the major issue that LED manufactures and lamps and lanterns should focus on solution.Finally, by
It is used for the occasions such as illumination in great power LED, cost control is particularly significant, and the structure size of high-powered LED lamp external heat sink
Do not allow too greatly, unlikely to allow to power up the mode active heat removals such as fan, the safe junction temperature of LED chip work should be 110 yet
Within DEG C, if junction temperature is excessive, light intensity reduction, spectral shift can be caused, colour temperature raises, thermal stress increases, chip accelerated ageing
A series of problems, such as, the service life of LED is greatly reduced, at the same time it can also cause the filling encapsulation micelle colloid of chip top
Accelerated ageing, influences its light transmission efficiency.At present, chip majority is packaged on thin heat dissipation metal substrate, due to heat dissipation metal base
Plate is relatively thin, thermal capacitance is smaller, and is easily deformed, and causes it to contact defective tightness with heat sink bottom surface and influence heat dissipation effect.
The content of the invention
Therefore, to solve technological deficiency and deficiency existing in the prior art, the present invention proposes a kind of LED encapsulation method.
Specifically, a kind of LED encapsulation method that one embodiment of the invention proposes, including：
Choose heat-radiating substrate；
Ultraviolet chip is welded on the heat-radiating substrate using welding procedure；
Lower floor's silica gel is grown in the ultraviolet chip；
Spherical silica gel lens are grown on lower floor's silica gel；
Upper strata silica gel is grown on the spherical silica gel lens to complete the encapsulation of the LED.
In one embodiment of the invention, the material of the heat-radiating substrate is iron, and thickness is 0.5~10mm.
In one embodiment of the invention, set inside the heat-radiating substrate in the width direction and parallel to the heat dissipation
The circular through hole of base plan；Wherein, a diameter of 0.2~0.4mm of the circular through hole, spacing are 0.5~10mm.
In one embodiment of the invention, the circular through hole directly casts or directly drills in the heat-radiating substrate
Formed.
In one embodiment of the invention, ultraviolet chip is welded on the heat-radiating substrate using welding procedure, wrapped
Include：
The printing solder in the ultraviolet chip；
Die bond inspection is carried out to the ultraviolet chip；
Reflow Soldering welding is carried out to the lead of the ultraviolet chip.
In one embodiment of the invention, lower floor's silica gel is grown in the ultraviolet chip, including：
The first layer of silica gel is coated above the ultraviolet chip, wherein not containing fluorescent powder in first layer of silica gel；
Using the first hemispherical hemispherical groove is formed in first layer of silica gel；
At a temperature of 90 DEG C~125 DEG C, by with first hemispherical first layer of silica gel baking 15~
60min；
First hemispherical is removed, forms lower floor's silica gel.
In one embodiment of the invention, spherical silica gel lens are grown on lower floor's silica gel, including：
The second layer of silica gel is coated in the hemispherical groove, wherein second layer of silica gel is free of fluorescent powder；
The first hemispherical silica gel is formed in second layer of silica gel using the second hemispherical；
At a temperature of 90 DEG C~125 DEG C, second layer of silica gel with hemispherical is toasted into 15~60min；
Second hemispherical is removed, forms the spherical silica gel lens.
In one embodiment of the invention, upper strata silica gel is grown on the spherical silica gel lens, including：
The 3rd layer of silica gel is coated on the spherical silica gel lens, wherein the 3rd layer of silica gel contains fluorescent powder；
Using the 3rd hemispherical the second hemispherical silica gel is formed in the 3rd layer of silica gel；
At a temperature of 90 DEG C~125 DEG C, by with the 3rd hemispherical the 3rd layer of silica gel baking 15~
60min；
The 3rd hemispherical is removed, forms the upper layer of silica gel.
In one embodiment of the invention, the fluorescent powder is red fluorescence powder, green emitting phosphor, blue colour fluorescent powder.
In one embodiment of the invention, the wavelength of the red fluorescence powder is 626nm, the ripple of the green emitting phosphor
A length of 515nm, the wavelength of the blue colour fluorescent powder is 447nm.
The embodiment of the present invention, possesses following advantage：
1st, the heat-radiating substrate in LED encapsulation structure use for iron heat-radiating substrate, iron heat-radiating substrate have thermal capacitance it is big, heat conduction
Effect is good, it is not easy to deforms, the characteristics of close is contacted with radiator, improve the heat dissipation effect of LED encapsulation structure；And this
The embodiment of invention by setting through hole inside the iron heat-radiating substrate in LED encapsulation structure, make LED its intensity almost without
While change, manufacture cost is reduced, and utilizes the mode of intermediate throughholes, the passage of air circulation can be increased, fully
The thermal convection current between air is make use of, improves the heat dissipation effect of LED.
2nd, the fluorescent powder in LED encapsulation structure takes separated form with LED chip, solves and draws under the high temperature conditions
The problem of quantum efficiency of the fluorescent powder risen declines.
3rd, red, green in silica gel, the content of blue three kinds of fluorescent powders are covered by varying upper strata, light can be continuously adjusted
Color, in addition to it can prepare and send the LED of white light, random color can also be become；In addition, may be used also by this form
To adjust the colour temperature of light source.
4th, the silica gel being in contact in LED encapsulation structure with LED chip is heat safe silica gel, solves silica gel in high temperature bar
The problem of light transmittance declines because caused by turning to be yellow silica gel aging under part.
5th, using variety classes silica gel it is different with phosphor gel refractive index the characteristics of, form lens in silica gel, improve LED
The problem of chip light emitting disperses, enables the light that light source is sent more to concentrate；By varying the spherical silica gel in LED encapsulation structure
The arrangement mode of lens, it is ensured that the light of light source is uniformly distributed in concentration zones, as the arrangement mode of spherical silica gel lens is in
Rectangle or diamond array.
6th, the refractive index of lower floor's silica gel is less than the refraction of upper strata silica gel used by the LED encapsulation structure for preparing of the present invention
Rate, the refractive index of the material of spherical silica gel lens, which is more than lower floor's silica gel and upper strata silica gel refractive index, this setup, to be carried
The light transmittance of high LED chip, enables the light that LED chip is emitted more to shine out through encapsulating material.
7th, set sphere lens to change the direction of propagation of light in LED encapsulation structure, effectively inhibit total reflection effect,
Be conducive to more light emittings to the external quantum efficiency for outside LED, increasing LED component, improve the luminous efficiency of LED.
By the detailed description below with reference to attached drawing, other side of the invention and feature become obvious.But it should know
Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they only try hard to concept
Ground illustrates structure and flow described herein.
Brief description of the drawings
Below in conjunction with attached drawing, the embodiment of the present invention is described in detail.
Fig. 1 is a kind of LED encapsulation method flow chart provided in an embodiment of the present invention；
Fig. 2 is a kind of LED encapsulation method flow diagram provided in an embodiment of the present invention；
Fig. 3 is a kind of LED encapsulation structure diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 4 is another LED encapsulation structure diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 5 is a kind of heat-radiating substrate diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 6 is a kind of ultraviolet wick diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 7 a are a kind of spherical silica gel lens profile schematic diagram provided in an embodiment of the present invention；
Fig. 7 b are another spherical silica gel lens profile schematic diagram provided in an embodiment of the present invention.
Embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of LED encapsulation method flow chart provided in an embodiment of the present invention.This method includes as follows
Step：
Step a, heat-radiating substrate is chosen；
Step b, ultraviolet chip is welded on the heat-radiating substrate using welding procedure；
Step c, lower floor's silica gel is grown in the ultraviolet chip；
Step d, spherical silica gel lens are grown on lower floor's silica gel；
Step e, upper strata silica gel is grown on the spherical silica gel lens to complete the encapsulation of the LED.
Preferably, the material of the heat-radiating substrate is iron, and thickness is 0.5~10mm.
Preferably, set in the width direction inside the heat-radiating substrate and lead to parallel to the circle of the heat-radiating substrate plane
Hole；Wherein, a diameter of 0.2~0.4mm of the circular through hole, spacing are 0.5~10mm.
Preferably, the circular through hole directly casts or directly drills to be formed in the heat-radiating substrate.
Wherein, step b includes：
Step b1, the printing solder in the ultraviolet chip；
Step b2, die bond inspection is carried out to the ultraviolet chip；
Step b3, Reflow Soldering welding is carried out to the lead of the ultraviolet chip.
Wherein, step c includes：
Step c1, the first layer of silica gel is coated above the ultraviolet chip, wherein not contained in first layer of silica gel glimmering
Light powder；
Step c2, using the first hemispherical hemispherical groove is formed in first layer of silica gel；
Step c3, at a temperature of 90 DEG C~125 DEG C, first layer of silica gel with first hemispherical is dried
Roasting 15~60min；
Step c4, first hemispherical is removed, forms lower floor's silica gel.
Wherein, step d includes：
Step d1, the second layer of silica gel is coated in the hemispherical groove, wherein second layer of silica gel is free of fluorescent powder；
Step d2, the first hemispherical silica gel is formed in second layer of silica gel using the second hemispherical；
Step d3, at 90 DEG C~125 DEG C, by with the second hemispherical second layer of silica gel baking 15~
60min；
Step d4, second hemispherical is removed, forms the spherical silica gel lens.
Wherein, step e includes：
Step e1, the 3rd layer of silica gel is coated on the spherical silica gel lens, wherein the 3rd layer of silica gel contains fluorescence
Powder；
Step e2, using the 3rd hemispherical the second hemispherical silica gel is formed in the 3rd layer of silica gel；
Step e3, at a temperature of 90 DEG C~125 DEG C, by the 3rd layer of silica gel baking 15 with the 3rd hemispherical
~60min；
Step e4, the 3rd hemispherical is removed, forms the upper layer of silica gel.
Preferably, in step e1, the fluorescent powder is red fluorescence powder, green emitting phosphor, blue colour fluorescent powder.
Preferably, the red fluorescence powder is Y2O2S:Eu3+, the green emitting phosphor is BaMgAl10O17:Eu2+,Mn2+,
The blue colour fluorescent powder is Sr5(PO4)3Cl:Eu2+, wherein, the wavelength of the red fluorescence powder is 626nm, the green fluorescence
The wavelength of powder is 515nm, and the wavelength of the blue colour fluorescent powder is 447nm.
Beneficial effects of the present invention are specially：
Heat-radiating substrate in 1.LED encapsulating structures use for iron heat-radiating substrate, iron heat-radiating substrate have thermal capacitance it is big, heat conduction
Effect is good, it is not easy to deforms, the characteristics of close is contacted with radiator, improve the heat dissipation effect of LED encapsulation structure；And this
The embodiment of invention by setting through hole inside the iron heat-radiating substrate in LED encapsulation structure, make LED its intensity almost without
While change, manufacture cost is reduced, and utilizes the mode of intermediate throughholes, the passage of air circulation can be increased, fully
The thermal convection current between air is make use of, improves the heat dissipation effect of LED.
Fluorescent powder in 2.LED encapsulating structures takes separated form with LED chip, solves and draws under the high temperature conditions
The problem of quantum efficiency of the fluorescent powder risen declines.
3. covering red, green in silica gel, the content of blue three kinds of fluorescent powders by varying upper strata, light can be continuously adjusted
Color, in addition to it can prepare and send the LED of white light, random color can also be become；In addition, may be used also by this form
To adjust the colour temperature of light source.
The silica gel being in contact in 4.LED encapsulating structures with LED chip is heat safe silica gel, solves silica gel in high temperature bar
The problem of light transmittance declines because caused by turning to be yellow silica gel aging under part.
5. the characteristics of utilizing variety classes silica gel different with phosphor gel refractive index, forms lens in silica gel, improve LED
The problem of chip light emitting disperses, enables the light that light source is sent more to concentrate；By varying the spherical silica gel in LED encapsulation structure
The arrangement mode of lens, it is ensured that the light of light source is uniformly distributed in concentration zones, as the arrangement mode of spherical silica gel lens is in
Rectangle or diamond array.
6. the refractive index of lower floor's silica gel is less than the refraction of upper strata silica gel used by LED encapsulation structure prepared by the present invention
Rate, the refractive index of the material of spherical silica gel lens, which is more than lower floor's silica gel and upper strata silica gel refractive index, this setup, to be carried
The light transmittance of high LED chip, enables the light that LED chip is emitted more to shine out through encapsulating material.
Embodiment two
Fig. 2 is referred to, Fig. 2 is a kind of LED encapsulation method flow diagram provided in an embodiment of the present invention.In above-mentioned implementation
On the basis of example, the technological process in more detail to the present invention is introduced the present embodiment.This method includes：
The preparation of S1, heat-radiating substrate；
The preparation of S11, stent/heat-radiating substrate；
Specifically, it is 0.5~10mm to choose thickness, and material is the heat-radiating substrate 101 of iron, cuts heat-radiating substrate 101；
The cleaning of S12, stent/heat-radiating substrate；
Specifically, the spot above heat-radiating substrate 101 and stent, especially oil stain are cleaned up；
The baking of S13, stent/heat-radiating substrate；
Specifically, the heat-radiating substrate 101 and stent that baking cleaning is completed, keep the drying of heat-radiating substrate 101 and stent.
Preferably, inside heat-radiating substrate have in the width direction and the parallel heat-radiating substrate plane circular through hole；
Wherein, the quantity of circular through hole is n and n >=2, a diameter of 0.2~0.4mm, 0.5~10mm of spacing between circular through hole；
Preferably, the circular through hole in heat-radiating substrate 101 is formed by direct casting technique or direct bore mode.
The preparation of S2, wick；
S21, by solder printing to ultraviolet chip；
S22, the ultraviolet chip progress die bond inspection that solder will be printed with；
S23, using Reflow Soldering welding procedure be welded to the top of heat-radiating substrate 101 by ultraviolet chip.
S31, the welding of spun gold bonding wire.
S41, bonding wire inspection；
Specifically, spun gold bonding wire is checked, it is qualified, then into lower step process, if unqualified, weld again.
The preparation of S5, phosphor gel；
S51, spot printing phosphor gel；
Specifically, red, green, the blue three kinds of fluorescent powders of configuration, by red, green, blue three kinds of fluorescent powders according to one
Fixed ratio is mixed with the 3rd layer of silica gel；
S52, carry out color measurement to mixed 3rd layer of silica gel；
S53, toasted mixed 3rd layer of silica gel.
Preferably, red, green, blue three kinds of fluorescent powders can be mixed random color using Multi-layers distributing mode.
S6, configuration silica gel；
The preparation of S61, lower floor's silica gel 102；
S611, be provided with above the heat-radiating substrate 101 of ultraviolet chip using coating method coat the first layer of silica gel, first
Layer of silica gel is not contain the high temperature resistant silicon glue-line of fluorescent powder；
S612, set the first hemispherical in the first layer of silica gel, using the first hemispherical in the first layer of silica gel
Upper formation hemispherical groove；
S613, baking are provided with the first layer of silica gel of the first hemispherical, and baking temperature is 90~125 DEG C, during baking
Between be 15~60min, make to have the first layer of silica gel of hemispherical groove structure to cure；
After S614, baking are completed, the first hemispherical being arranged in the first layer of silica gel is removed, being formed has half
Lower floor's silica gel 102 of spherical groove structure.
The preparation of S62, spherical silica gel lens 103；
S621, coat the second layer of silica gel in the hemispherical groove of lower floor's silica gel 102 using coating method, wherein the second silicon
Glue-line does not contain fluorescent powder；
S622, set the second hemispherical in the second layer of silica gel, using the second hemispherical in the second layer of silica gel
It is interior to form the first hemispherical silica gel with hemispherical shape；
S623, baking are provided with the second layer of silica gel of the second hemispherical, and baking temperature is 90~125 DEG C, during baking
Between be 15~60min, make to have the second layer of silica gel of hemispherical dome structure to cure；
S624, after the bake out is complete, the second hemispherical being arranged in the second layer of silica gel is removed, and hemispherical is recessed
Silica gel and the first hemispherical silica gel in groove form spherical silica gel lens 103, wherein, a diameter of the 10 of spherical silica gel lens 103
~200 microns, the spacing between spherical silica gel lens 103 is 10~200 microns；
Preferably, spherical silica gel lens 103 can be evenly distributed with rectangular or diamond shape；
The preparation of S63, upper strata silica gel 104.
S631, coat the 3rd layer of silica gel above spherical silica gel lens 103 using coating method, wherein the 3rd layer of silica gel contains
There are red, green, blue three kinds of fluorescent powders；
S632, set the 3rd hemispherical in the 3rd layer of silica gel, using the 3rd hemispherical in the 3rd layer of silica gel
The second hemispherical silica gel of interior formation；
S633, baking are provided with the 3rd layer of silica gel of the 3rd hemispherical, and baking temperature is 90~125 DEG C, during baking
Between be 15~60min, make with the 3rd hemispherical the 3rd layer of silica gel cure；
After S634, baking are completed, the 3rd hemispherical being arranged in the 3rd layer of silica gel is removed, being formed has half
The upper strata silica gel 104 of spherical structure；
Preferably, red fluorescence powder Y2O2S:Eu3+, green emitting phosphor BaMgAl10O17:Eu2+,Mn2+, blue-fluorescence
Powder is Sr5(PO4)3Cl:Eu2+, wherein, the wavelength of red fluorescence powder is 626nm, and the wavelength of green emitting phosphor is 515nm, blueness
The wavelength of fluorescent powder is 447nm.
S71, length are roasting；
Specifically, heat-radiating substrate 101, ultraviolet chip, lower floor's silica gel 102, spherical silica gel lens 103 and upper strata silica gel are toasted
104, baking temperature is 100~150 DEG C, and baking time is 4~12h, completes the encapsulation of LED；
Preferably, the refractive index of lower floor's silica gel 102 is less than the refractive index of upper strata silica gel 104, the folding of spherical silica gel lens 103
Penetrate refractive index of the rate more than lower floor's silica gel 102 and upper strata silica gel 104.
The LED that S81, test, go-no-go encapsulation are completed.
The LED encapsulation structure of S82, Package Testing qualification.
Embodiment three
It is a kind of LED envelopes provided in an embodiment of the present invention please also refer to Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7 a~Fig. 7 b, Fig. 3
Assembling structure diagrammatic cross-section, Fig. 4 are another LED encapsulation structure diagrammatic cross-section provided in an embodiment of the present invention, and Fig. 5 is this hair
A kind of heat-radiating substrate diagrammatic cross-section that bright embodiment provides, Fig. 6 is a kind of ultraviolet wick section provided in an embodiment of the present invention
Schematic diagram, Fig. 7 a are a kind of spherical silica gel lens profile schematic diagram provided in an embodiment of the present invention, and Fig. 7 b are the embodiment of the present invention
Another spherical silica gel lens profile schematic diagram of offer.The LED encapsulation structure, including：
Heat-radiating substrate 101；
Wherein, as shown in figure 5, the material of heat-radiating substrate 101 is iron, the thickness D of heat-radiating substrate 101 is 0.5~10mm,
Circular through hole is provided with heat-radiating substrate 101, the inside of heat-radiating substrate 101 has the circular through hole along width W directions, circular through hole
The line of centres it is parallel with 101 plane of heat-radiating substrate, the quantity of circular through hole is n and n >=2, a diameter of 0.2~0.4mm, circular
0.5~10mm of spacing between through hole.
Ultraviolet chip, is formed at 101 upper surface of heat-radiating substrate；
Wherein, as shown in fig. 6, ultraviolet wick structure includes：Material is sapphire substrate 201, on substrate 201
N-type AlGaN layer 202, the mqw layer 203 in N-type AlGaN layer 202, the Al on mqw layer 203xGaN1-xN/AlyGaN1- yN layers 204, positioned at AlxGaN1-xN/AlyGaN1-yP-type AlGaN layer 205 on N layers 204, the p-type in p-type AlGaN layer 205
GaN layer 206, the p-type contact 207 in p-type GaN layer 206, the N-type contact 208 in N-type AlGaN layer 202.
Lower floor's silica gel 102, is formed at ultraviolet chip upper surface；
Wherein, lower floor's silica gel 102 does not contain fluorescent powder, and lower floor's silica gel 102 is the silica gel of high temperature resistant material.
Upper strata silica gel 104, is formed at 102 upper surface of lower floor's silica gel；
Wherein, as shown in figure 4, upper strata silica gel 104 is containing red, green, blue three kinds of fluorescent powders, upper strata silica gel 104
Hemispherical shape, and the refractive index of upper strata silica gel 104 is more than the refractive index of lower floor's silica gel 102.
Spherical silica gel lens 103, spherical silica gel lens 103 are located at lower floor's silica gel 102 and 104 interface of upper strata silica gel；
Wherein, spherical silica gel lens 103 do not contain fluorescent powder, and the quantity of spherical silica gel lens 103 is n and n >=2, diameter
(radius R) is 10~200 μm, and the spacing A between spherical silica gel lens 103 is 10~200 μm, the folding of spherical silica gel lens 103
Penetrate refractive index of the rate more than lower floor's silica gel 102 and upper strata silica gel 104；
Preferably, as shown in Fig. 7 a~7b, spherical silica gel lens 103 can rectangular or diamond shape it is evenly distributed.
Preferably, spherical silica gel lens 103 can be in and not arrange equidistantly.
Preferably, upper strata silica gel 104 is hemispherical shape, and the beam angle of LED can be made maximum.
In conclusion specific case used herein is to a kind of original of LED encapsulation method provided in an embodiment of the present invention
Reason and embodiment are set forth, and the explanation of above example is only intended to help to understand that the method for the present invention and its core are thought
Think；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, in specific embodiments and applications
There will be changes, in conclusion this specification content should not be construed as limiting the invention, protection scope of the present invention
It should be subject to appended claim.
Claims (10)
- A kind of 1. LED encapsulation method, it is characterised in that including：Choose heat-radiating substrate；Ultraviolet chip is welded on the heat-radiating substrate using welding procedure；Lower floor's silica gel is grown in the ultraviolet chip；Spherical silica gel lens are grown on lower floor's silica gel；Upper strata silica gel is grown on the spherical silica gel lens to complete the encapsulation of the LED.
- 2. according to the method described in claim 1, it is characterized in that, the material of the heat-radiating substrate is iron, thickness for 0.5~ 10mm。
- 3. according to the method described in claim 2, it is characterized in that, set inside the heat-radiating substrate in the width direction and parallel In the circular through hole of the heat-radiating substrate plane；Wherein, a diameter of 0.2~0.4mm of the circular through hole, spacing for 0.5~ 10mm。
- 4. according to the method described in claim 3, it is characterized in that, the circular through hole directly casts or in the heat dissipation base Plate directly drills to be formed.
- 5. according to the method described in claim 1, it is characterized in that, ultraviolet chip is welded on the heat dissipation using welding procedure On substrate, including：The printing solder in the ultraviolet chip；Die bond inspection is carried out to the ultraviolet chip；Reflow Soldering welding is carried out to the lead of the ultraviolet chip.
- 6. according to the method described in claim 1, it is characterized in that, grow lower floor silica gel in the ultraviolet chip, including：The first layer of silica gel is coated above the ultraviolet chip, wherein not containing fluorescent powder in first layer of silica gel；Using the first hemispherical hemispherical groove is formed in first layer of silica gel；At a temperature of 90 DEG C~125 DEG C, by with first hemispherical first layer of silica gel baking 15~ 60min；First hemispherical is removed, forms lower floor's silica gel.
- 7. according to the method described in claim 6, it is characterized in that, on lower floor's silica gel grow spherical silica gel lens, bag Include：The second layer of silica gel is coated in the hemispherical groove, wherein second layer of silica gel is free of fluorescent powder；The first hemispherical silica gel is formed in second layer of silica gel using the second hemispherical；At a temperature of 90 DEG C~125 DEG C, second layer of silica gel with hemispherical is toasted into 15~60min；Second hemispherical is removed, forms the spherical silica gel lens.
- 8. according to the method described in claim 1, it is characterized in that, on the spherical silica gel lens grow upper strata silica gel, bag Include：The 3rd layer of silica gel is coated on the spherical silica gel lens, wherein the 3rd layer of silica gel contains fluorescent powder；Using the 3rd hemispherical the second hemispherical silica gel is formed in the 3rd layer of silica gel；At a temperature of 90 DEG C~125 DEG C, the 3rd layer of silica gel with the 3rd hemispherical is toasted into 15~60min；The 3rd hemispherical is removed, forms the upper layer of silica gel.
- 9. according to the method described in claim 8, it is characterized in that, the fluorescent powder is red fluorescence powder, green emitting phosphor, indigo plant Color fluorescent powder.
- It is 10. described green according to the method described in claim 9, it is characterized in that, the wavelength of the red fluorescence powder is 626nm The wavelength of color fluorescent powder is 515nm, and the wavelength of the blue colour fluorescent powder is 447nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711216256.6A CN108011019B (en) | 2017-11-28 | 2017-11-28 | LED packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711216256.6A CN108011019B (en) | 2017-11-28 | 2017-11-28 | LED packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108011019A true CN108011019A (en) | 2018-05-08 |
| CN108011019B CN108011019B (en) | 2019-12-17 |
Family
ID=62052483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711216256.6A Active CN108011019B (en) | 2017-11-28 | 2017-11-28 | LED packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108011019B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101103659A (en) * | 2004-11-24 | 2008-01-09 | 通用电气公司 | Heat sink with microchannel cooling for power devices |
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
-
2017
- 2017-11-28 CN CN201711216256.6A patent/CN108011019B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101103659A (en) * | 2004-11-24 | 2008-01-09 | 通用电气公司 | Heat sink with microchannel cooling for power devices |
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108011019B (en) | 2019-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105977245A (en) | Color-temperature-adjustable COB packaging structure and packaging method thereof | |
| CN107990267A (en) | A kind of solar LED Lawn lamp | |
| CN109148429A (en) | Light-emitting diode encapsulation structure | |
| CN208256718U (en) | A kind of encapsulating structure of LED | |
| CN208315591U (en) | A kind of encapsulating structure of LED | |
| CN108011019A (en) | A kind of LED encapsulation method | |
| CN107946437A (en) | A kind of encapsulating structure of LED | |
| CN208142220U (en) | A kind of White-light LED package structure | |
| CN108011011A (en) | A kind of encapsulating structure of LED | |
| CN107994113A (en) | A kind of high-power blue-ray LED multilayer encapsulation structure | |
| CN207674291U (en) | Energy saving high-power LED mine lamp | |
| CN207674244U (en) | Intelligent LED ground light | |
| CN107946436B (en) | A kind of White-light LED package structure | |
| CN107833951A (en) | A kind of LED encapsulation method | |
| CN108011016B (en) | A kind of LED encapsulation structure | |
| CN207705239U (en) | A kind of LED encapsulation structure | |
| CN108006563A (en) | LED Lawn lamps | |
| CN108011026A (en) | A kind of great power LED bilayer semiglobe packaging technology | |
| CN208507727U (en) | LED encapsulation structure and high spotlight LED lamp | |
| CN107833946A (en) | A kind of LED encapsulation method | |
| CN108006488A (en) | A kind of New LED wall lamp | |
| CN107946442A (en) | LED package and high transparency LED light | |
| CN108011006A (en) | A kind of method for packaging white LED | |
| CN108011024B (en) | LED light and LED packaging technology | |
| CN108011022A (en) | LED light and LED encapsulation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191119 Address after: 065000 Hebei Langfang Anci District Longhe Economic Development Zone 2 Fukang Road, technology enterprise innovation and entrepreneurship Park five layer 501 Applicant after: HEBEI FISSION TECHNOLOGY INCUBATOR CO.,LTD. Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province Applicant before: XI'AN CREATION KEJI Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191127 Address after: 065001 Tongbai Village (17) - 21, economic and Technological Development Zone, Langfang City, Hebei Province Applicant after: Langfang Yuanchi Technology Co.,Ltd. Address before: 065000 Hebei Langfang Anci District Longhe Economic Development Zone 2 Fukang Road, technology enterprise innovation and entrepreneurship Park five layer 501 Applicant before: HEBEI FISSION TECHNOLOGY INCUBATOR CO.,LTD. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230425 Address after: Room 205, No. 14, Group 1, Tongbai Village, Economic and Technological Development Zone, Langfang City, Hebei Province, 065000 Patentee after: Langfang Yunhang Technology Co.,Ltd. Address before: 065001 Tongbai Village (17) - 21, Langfang Economic and Technological Development Zone, Hebei Province Patentee before: Langfang Yuanchi Technology Co.,Ltd. |