CN107833951A - A kind of LED encapsulation method - Google Patents
A kind of LED encapsulation method Download PDFInfo
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- CN107833951A CN107833951A CN201711215652.7A CN201711215652A CN107833951A CN 107833951 A CN107833951 A CN 107833951A CN 201711215652 A CN201711215652 A CN 201711215652A CN 107833951 A CN107833951 A CN 107833951A
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- silica gel
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- hemispherical
- lens
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 177
- 239000000741 silica gel Substances 0.000 claims abstract description 176
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 176
- 239000003292 glue Substances 0.000 claims abstract description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 94
- 239000010703 silicon Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 40
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052742 iron Inorganic materials 0.000 claims abstract description 13
- 230000026267 regulation of growth Effects 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009738 saturating Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 10
- 229960001866 silicon dioxide Drugs 0.000 description 141
- 238000002360 preparation method Methods 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- NCWQJOGVLLNWEO-UHFFFAOYSA-N methylsilicon Chemical compound [Si]C NCWQJOGVLLNWEO-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation method, this method includes：Choose heat-radiating substrate；Blue chip is welded on the heat-radiating substrate using welding procedure；The growth regulation half spherical silica gel lens on the blue chip；Lower floor's silica gel is grown on the blue chip and on the first semispherical silicon glue lens；The semispherical silicon glue lens of growth regulation two on lower floor's silica gel；Upper strata silica gel is grown on lower floor's silica gel and on the second semispherical silicon glue lens to complete the encapsulation of the LED.The LED encapsulation structure of the present invention adds LED radiating effect by using the iron heat-radiating substrate with oblique through-hole structure, can ensure that LED chip preferably can shine out through encapsulating material using spherical silica gel lens arrangement, improve the transmissivity of light.
Description
Technical field
The present invention relates to LED encapsulation technologies field, more particularly to a kind of LED encapsulation method.
Background technology
There is first LED light emitting diode commercially in 20 middle of century, by the course of decades, achieve and draw
People advises purpose rapid progress.Its luminous efficiency has reached the level of heat radiation light source, and light intensity reaches candle light level, radiates various colors,
The especially birth of white light LEDs, application of the LED product in lighting field, it has also become the new product of great influence.
LED is be combined with each other and given off energy using the electronics in semi-conducting material and hole so that energy band position rank
Change, the energy that it is discharged with luminescence display.LED have small volume, long lifespan, driving voltage are low, power consumption is low, reaction
The advantages that speed is fast, vibration strength is good, it is widely used in the fields such as signal designation, digital-scroll technique.With the continuous progress of technology,
The development of ultra-bright LED has obtained succeeding in developing for success, especially white light LEDs so that it is increasingly being used in color lamp dress
Decorations, even lighting field.In recent years, LED adds blue colour fluorescent powder, red fluorescence powder and green emitting phosphor using ultraviolet wick mostly
Mode produce white light, to realize illumination, there is problems with which.
First, foreign study personnel have found that the light scattering characteristic of fluorescent material causes significant component of forward entrance light meeting
By back scattering.In current high-power LED encapsulation structure, fluorescent material is usually to be applied directly to chip surface.Due to chip
Absorption be present for the light of back scattering, therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation,
In addition, high temperature caused by chip can be remarkably decreased the quantum efficiency of fluorescent material, so as to seriously affect the luminous efficiency of encapsulation.
Secondly, the light that LED light source is sent typically is distributed in divergence expression, causes light source brightness of illumination not enough to be concentrated, generally requires by outer
Portion's lens carry out secondary reshaping, to adapt to the lighting demand of specific occasion, therefore add production cost.Again, due to big work(
Rate LED is used for the occasions such as illumination, and cost control is particularly significant, and the physical dimension of high-powered LED lamp external heat sink does not also permit
Xu Tai great, unlikely allows to power up the mode active heat removal such as fan, the safe junction temperature of LED chip work should within 110 DEG C,
If junction temperature is too high, light intensity reduction, spectral shift, colour temperature rise, thermal stress can be caused to increase, chip accelerated ageing etc. it is a series of
Problem, LED service life is greatly reduced, at the same time it can also cause the filling encapsulation micelle colloid accelerated ageing of chip top,
Influence its light transmission efficiency.At present, chip majority is packaged on thin heat dissipation metal substrate, because heat dissipation metal substrate is relatively thin, warm
Appearance is smaller, and is easily deformed, and causes it to contact defective tightness with fin bottom surface and influence radiating effect.Finally, LED is inputted
Only the energy of some is converted into luminous energy in power, and remaining energy is then converted into heat energy, so for LED chip, especially
It is the very big LED chip of power density, how controls its energy, is the major issue that LED manufactures and light fixture should focus on solution.
The content of the invention
Therefore, to solve technological deficiency and deficiency existing for prior art, the present invention proposes a kind of LED encapsulation method.
Specifically, a kind of LED encapsulation method that one embodiment of the invention proposes, including：
Choose heat-radiating substrate；
Blue chip is welded on the heat-radiating substrate using welding procedure；
The growth regulation half spherical silica gel lens on the blue chip；
Lower floor's silica gel is grown on the blue chip and on the first semispherical silicon glue lens；
The semispherical silicon glue lens of growth regulation two on lower floor's silica gel；
Upper strata silica gel is grown on lower floor's silica gel and on the second semispherical silicon glue lens to complete the LED's
Encapsulation.
In one embodiment of the invention, blue chip is welded on the heat-radiating substrate using welding procedure, wrapped
Include：
The printing solder on the blue chip；
Die bond inspection is carried out to the blue chip；
The blue chip is welded using Reflow Soldering welding procedure.
In one embodiment of the invention, the growth regulation half spherical silica gel lens on the blue chip, including：
The first layer of silica gel is coated on the blue chip；
The first hemispherical is set to form the first hemispherical silica gel in first layer of silica gel；
At a temperature of 90 DEG C~125 DEG C, first layer of silica gel is toasted into 15~60min；
First hemispherical is removed, forms the first semispherical silicon glue lens.
In one embodiment of the invention, using coating processes on the blue chip and first semispherical silicon
Lower floor's silica gel is grown on glue lens.
In one embodiment of the invention, the semispherical silicon glue lens of growth regulation two on lower floor's silica gel, including：
The second layer of silica gel is coated on lower floor's silica gel；
The second hemispherical is set to form the second hemispherical silica gel in second layer of silica gel；
At a temperature of 90 DEG C~125 DEG C, second layer of silica gel is toasted into 15~60min；
Second hemispherical is removed, forms the second semispherical silicon glue lens.
In one embodiment of the invention, grow on lower floor's silica gel and on the second semispherical silicon glue lens
Upper strata silica gel, including：
The 3rd layer of silica gel is coated on lower floor's silica gel and on the second semispherical silicon glue lens；
The 3rd hemispherical is set to form the 3rd hemispherical silica gel in the 3rd layer of silica gel；
At a temperature of 90 DEG C~125 DEG C, the 3rd layer of silica gel is toasted into 15~60min；
The 3rd hemispherical is removed, forms the upper layer of silica gel.
In one embodiment of the invention, the material of the heat-radiating substrate is iron, and thickness is 0.5~10mm.
In one embodiment of the invention, manhole is provided with the heat-radiating substrate, the manhole has
Arranged along the heat-radiating substrate width and 1~10 ° of angle is formed with the heat-radiating substrate plane；Wherein, the circle
A diameter of 0.1~0.3mm of through hole, the spacing between the manhole is 0.5~10mm.
In one embodiment of the invention, the manhole in the heat-radiating substrate directly cast to be formed or by
Directly fluting is formed on the heat-radiating substrate.
In one embodiment of the invention, it is glimmering to contain yellow for the second semispherical silicon glue lens and the upper layer of silica gel
Light powder.
The embodiment of the present invention, possesses following advantage：
1st, the heat-radiating substrate in LED encapsulation structure use for iron heat-radiating substrate, iron heat-radiating substrate has that thermal capacitance is big, heat conduction
Effect is good, it is not easy to deforms, the characteristics of close is contacted with heat abstractor, improve the radiating effect of LED encapsulation structure；And this
The embodiment of invention makes LED almost not have in its intensity by setting oblique through hole inside the iron heat-radiating substrate in LED encapsulation structure
While changing, manufacturing cost is reduced, and utilizes the mode of middle tiltedly through hole, the passage of air circulation can be increased,
The thermal convection current speed of air is lifted using stack effect, improves LED radiating effect.
2nd, the fluorescent material in LED encapsulation structure takes the form separated with LED chip, solves and draws under the high temperature conditions
The problem of quantum efficiency of the fluorescent material risen declines.
3rd, by change upper strata cover silica gel yellow fluorescent powder content, can continuously adjust light color send it is white
Light, the colour temperature of light source can also be adjusted furthermore with yellow fluorescent powder.
4th, the characteristics of using variety classes silica gel with phosphor gel refractive index difference, lens are formed in silica gel, improves LED
The problem of chip light emitting disperses, the light that light source is sent is set more to concentrate；By changing the semispherical silicon in LED encapsulation structure
The arrangement mode of glue lens, it is ensured that the light of light source is uniformly distributed in concentration zones, such as the arrangement side of semispherical silicon glue lens
Formula is rectangular or diamond array.
5th, set hemispherical lens to change the direction of propagation of light in LED encapsulation structure, effectively suppress total reflection effect
Should, be advantageous to more light and be transmitted into outside LED, increase the external quantum efficiency of LED component, improve LED luminous efficiency.
By the detailed description below with reference to accompanying drawing, other side of the invention and feature become obvious.But it should know
Road, the accompanying drawing is only the purpose design explained, not as the restriction of the scope of the present invention, because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale accompanying drawing, they only try hard to concept
Ground illustrates structure and flow described herein.
Brief description of the drawings
Below in conjunction with accompanying drawing, the embodiment of the present invention is described in detail.
Fig. 1 is a kind of LED encapsulation method flow chart provided in an embodiment of the present invention；
Fig. 2 is a kind of LED encapsulation method schematic flow sheet provided in an embodiment of the present invention；
Fig. 3 is a kind of LED encapsulation structure diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 4 is a kind of heat-radiating substrate diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 5 is a kind of blue chip diagrammatic cross-section provided in an embodiment of the present invention；
A kind of Fig. 6 a semispherical silicon glue lens diagrammatic cross-sections provided in an embodiment of the present invention；
Fig. 6 b are another semispherical silicon glue lens diagrammatic cross-section provided in an embodiment of the present invention.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of LED encapsulation method flow chart provided in an embodiment of the present invention.This method includes as follows
Step：
Step a, heat-radiating substrate is chosen；
Step b, blue chip is welded on the heat-radiating substrate using welding procedure；
Step c, the growth regulation half spherical silica gel lens on the blue chip；
Step d, lower floor's silica gel is grown on the blue chip and on the first semispherical silicon glue lens；
Step e, the semispherical silicon glue lens of growth regulation two on lower floor's silica gel；
Step f, upper strata silica gel is grown on lower floor's silica gel and on the second semispherical silicon glue lens to complete
State LED encapsulation.
Preferably, the material of the heat-radiating substrate is iron, and thickness is 0.5~10mm.
Preferably, manhole is provided with the heat-radiating substrate, the manhole has wide along the heat-radiating substrate
Spend direction arrangement, and with the heat-radiating substrate plane into 1~10 ° of angle；Wherein, a diameter of the 0.1 of the manhole~
0.3mm, the spacing between the manhole is 0.5~10mm.
Preferably, the manhole in the heat-radiating substrate directly casts to be formed or by straight on the heat-radiating substrate
Fluting is connect to be formed.
Wherein, step b includes：
Step b1, the printing solder on the blue chip；
Step b2, die bond inspection is carried out to the blue chip；
Step b3, the blue chip is welded using Reflow Soldering welding procedure.
Wherein, step c includes：
Step c1, the first layer of silica gel is coated on the blue chip；
Step c2, the first hemispherical is set to form the first hemispherical silica gel in first layer of silica gel；
Step c3, at a temperature of 90 DEG C~125 DEG C, first layer of silica gel is toasted into 15~60min；
Step c4, first hemispherical is removed, forms the first semispherical silicon glue lens.
Wherein, step d includes：Using coating processes on the blue chip and on the first semispherical silicon glue lens
Grow lower floor's silica gel 103.
Wherein, step e includes：
Step e1, the second layer of silica gel is coated on lower floor's silica gel；
Step e2, the second hemispherical is set to form the second hemispherical silica gel in second layer of silica gel；
Step e3, at a temperature of 90 DEG C~125 DEG C, second layer of silica gel is toasted into 15~60min；
Step e4, second hemispherical is removed, forms the second semispherical silicon glue lens.
Wherein, step f includes：
Step f1, the 3rd layer of silica gel is coated on lower floor's silica gel and on the second semispherical silicon glue lens；
Step f2, the 3rd hemispherical is set to form the 3rd hemispherical silica gel in the 3rd layer of silica gel；
Step f3, at a temperature of 90 DEG C~125 DEG C, the 3rd layer of silica gel is toasted into 15~60min；
Step f4, the 3rd hemispherical is removed, forms the upper layer of silica gel.
Preferably, the second semispherical silicon glue lens and the upper layer of silica gel contain yellow fluorescent powder.
Beneficial effects of the present invention are specially：
Heat-radiating substrate in 1.LED encapsulating structures use for iron heat-radiating substrate, iron heat-radiating substrate has that thermal capacitance is big, heat conduction
Effect is good, it is not easy to deforms, the characteristics of close is contacted with heat abstractor, improve the radiating effect of LED encapsulation structure；And this
The embodiment of invention makes LED almost not have in its intensity by setting oblique through hole inside the iron heat-radiating substrate in LED encapsulation structure
While changing, manufacturing cost is reduced, and utilizes the mode of middle tiltedly through hole, the passage of air circulation can be increased,
The thermal convection current between air is made full use of, improves LED radiating effect.
Fluorescent material in 2.LED encapsulating structures takes the form separated with LED chip, solves and draws under the high temperature conditions
The problem of quantum efficiency of the fluorescent material risen declines.
3. by changing the content of yellow fluorescent powder in silica gel, the color that can continuously adjust light is changed into white light, can be with
Adjust the colour temperature of light source.
4. the characteristics of using variety classes silica gel with phosphor gel refractive index difference, forming lens in silica gel, improve LED
The problem of chip light emitting disperses, the light that light source is sent is set more to concentrate；By changing the semispherical silicon in LED encapsulation structure
The arrangement mode of glue lens, it is ensured that the light of light source is uniformly distributed in concentration zones, such as the arrangement side of semispherical silicon glue lens
Formula is rectangular or diamond array.
Embodiment two
Fig. 2 is referred to, Fig. 2 is a kind of LED encapsulation method schematic flow sheet provided in an embodiment of the present invention.In above-mentioned implementation
On the basis of example, the technological process in more detail to the present invention is introduced the present embodiment.This method includes：
S1, heat-radiating substrate preparation；
S11, support/heat-radiating substrate preparation；
Specifically, it is 0.5~10mm to choose thickness, and material is the heat-radiating substrate 101 of iron, cuts heat-radiating substrate 101；
S12, support/heat-radiating substrate cleaning；
Specifically, the spot above heat-radiating substrate 101 and support, especially oil stain are cleaned up；
S13, support/heat-radiating substrate baking；
Specifically, the heat-radiating substrate 101 and support that baking cleaning is completed, the drying of heat-radiating substrate 101 and support is kept.
Preferably, have inside heat-radiating substrate 101 in the width direction and in a certain angle with the plane of heat-radiating substrate 101
Manhole；Wherein, the quantity of manhole is n and n >=2, a diameter of 0.1~0.3mm, manhole and heat-radiating substrate 101
The angle of plane is 1~10 °, 0.5~10mm of spacing between manhole.
Preferably, the manhole in heat-radiating substrate 101 by direct casting technique or on heat-radiating substrate 101 along width
Directly slot to be formed in degree direction.
S2, chip welding；
S21, by solder printing to blue chip；
S22, the blue chip progress die bond inspection that solder will be printed with；
S23, using Reflow Soldering welding procedure blue chip is welded to the top of heat-radiating substrate 101.
S3, phosphor gel preparation；
S31, configuration phosphor gel；
Specifically, yellow fluorescent powder is configured, yellow fluorescent powder is mixed respectively in the second layer of silica gel and the 3rd layer of silica gel
Close；
S32, color measurement is carried out to mixed second layer of silica gel and the 3rd layer of silica gel；
S33, the 3rd qualified layer of silica gel of color measurement toasted.
Preferably, the adoptable material of yellow fluorescent powder is (YGd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、
AESi2O2N2:Eu or M- α-SiAlON:Eu, the wave-length coverage of yellow fluorescent powder is 570nm~620nm.
S4, the first semispherical silicon glue lens 102 preparation；
S41, the first layer of silica gel is coated on the heat-radiating substrate 101 for being provided with blue chip, set in the first layer of silica gel
First hemispherical, the first hemispherical with hemispherical shape is formed in the first layer of silica gel using the first hemispherical
Silica gel；
S42, baking are provided with the first hemispherical silica gel of the first hemispherical, and baking temperature is 90~125 DEG C, baking
Time is 15~60min, makes the first semispherical silicon adhesive curing；
S43, after the bake out is complete, the first hemispherical being arranged in the first layer of silica gel is removed, complete first
The preparation of semispherical silicon glue lens 102.
Preferably, the first semispherical silicon glue lens 102 are free of fluorescent material；
S5, lower floor's silica gel 103 preparation；
Specifically, lower floor's silica gel 103 is coated on the first semispherical silicon glue lens 102, completes the system of lower floor's silica gel 103
It is standby.
Preferably, lower floor's silica gel 103 is free of fluorescent material；
S6, the second semispherical silicon glue lens 104 preparation；
S61, lower floor's silica gel 103 upper surface coat the second layer of silica gel, the second hemispherical is set in the second layer of silica gel
Mould, the second hemispherical silica gel with hemispherical shape is formed in the second layer of silica gel using the second hemispherical；
S62, baking are provided with the second hemispherical silica gel of the second hemispherical, and baking temperature is 90~125 DEG C, baking
Time is 15~60min, makes the second semispherical silicon adhesive curing；
After S63, baking are completed, the second hemispherical being arranged in the second layer of silica gel is removed, completes the second half
The preparation of spherical silica gel lens 104.
Preferably, the second semispherical silicon glue lens 104 contain yellow fluorescent powder；
S7, upper strata silica gel 105 preparation；
S71, the 3rd layer of silica gel is coated on the second semispherical silicon glue lens 104；
S72, the 3rd hemispherical is set in the 3rd layer of silica gel, using the 3rd hemispherical in the 3rd layer of silica gel
Form the 3rd hemispherical silica gel with hemispherical shape；
S73, baking are provided with the 3rd hemispherical silica gel of the 3rd hemispherical, and baking temperature is 90~125 DEG C, baking
Time is 15~60min, makes the 3rd semispherical silicon adhesive curing；
After S74, baking are completed, the 3rd hemispherical being arranged in the 3rd layer of silica gel is removed, completes upper layer of silicon
The preparation of glue 105.
Preferably, upper strata silica gel 105 contains yellow fluorescent powder, by changing containing for yellow fluorescent powder in upper strata silica gel 105
Amount, the colour temperature of light can be continuously adjusted.
S8, length are roasting；
Specifically, overall baking heat-radiating substrate 101, blue chip, the lower floor's silica gel 103 of the first semispherical silicon glue lens 102,
Second semispherical silicon glue lens 104 and upper strata silica gel 105, baking temperature are 100~150 DEG C, and baking time is 4~12h, are completed
LED encapsulation；
The LED that S9, test, go-no-go encapsulation are completed.
The qualified LED encapsulation structure of S10, Package Testing.
According to the method for the present embodiment, can prepare to form the LED encapsulation structure with multilayer semispherical silicon glue lens, for
The LED encapsulation structure with multilayer semispherical silicon glue lens prepared using preparation method of the present invention should not be construed as new invention
Create.
Embodiment three
Please also refer to Fig. 3, Fig. 4, Fig. 5 and Fig. 6 a~Fig. 6 b, Fig. 3 is a kind of LED encapsulation provided in an embodiment of the present invention
Structural profile illustration, Fig. 4 are a kind of heat-radiating substrate diagrammatic cross-section provided in an embodiment of the present invention, and Fig. 5 is implemented for the present invention
A kind of blue chip diagrammatic cross-section that example provides, a kind of Fig. 6 a semispherical silicon glue lens sections provided in an embodiment of the present invention show
It is intended to, Fig. 6 b are another semispherical silicon glue lens diagrammatic cross-section provided in an embodiment of the present invention.In the base of above-described embodiment
On plinth, the LED encapsulation structure of the present invention will be introduced for the present embodiment, and the LED encapsulation structure includes：
Heat-radiating substrate 101；
Wherein, as shown in figure 4, the material of heat-radiating substrate 101 is iron, the thickness D of heat-radiating substrate 101 is 0.5~10mm,
Manhole is provided with heat-radiating substrate 101, manhole arranges in the width direction inside heat-radiating substrate 101, and with radiating
The plane of substrate 101 manhole in a certain angle；Wherein, the quantity of manhole is n and n >=2, diameter (radius R) are 0.1
~0.3mm, the angle of manhole and the plane of heat-radiating substrate 101 is 1~10 °, the spacing A between manhole is 0.5~
10mm。
Blue chip, it is formed at the upper surface of heat-radiating substrate 101；
Wherein, as shown in figure 5, blue chip structure includes：Substrate 201, the GaN cushions 202 on substrate 201,
GaN layer 203 on GaN cushions 202, the p-type GaN SQWs wide bandgap layer 204 in position GaN layer 203, positioned at p-type GaN
InGaN layer 205 in SQW wide bandgap layer 204, the p-type GaN SQWs wide bandgap layer 206 in InGaN layer 205, position
AlGaN barrier layers 207 in p-type GaN SQWs wide bandgap layer 206, the p-type GaN layer on AlGaN barrier layers 207
208, the anode electrode 209 in p-type GaN layer 208 and the cathode electrode 210 in GaN layer 203.
First semispherical silicon glue lens 102, are formed at heat-radiating substrate 101 and blue chip upper surface；
Wherein, a diameter of 10~200 μm of the first semispherical silicon glue lens 102, between the first semispherical silicon glue lens 102
Spacing be 10~200 μm, the first semispherical silicon glue lens 102 do not contain fluorescent material, the folding of the first semispherical silicon glue lens 102
Penetrate the refractive index that rate is more than lower floor's silica gel 103.
Preferably, the material of the first semispherical silicon glue lens 102 can be polycarbonate, polymethyl methacrylate, glass
Glass.
Preferably, as shown in Fig. 6 a~6b, the first spherical silica gel lens 102 can be evenly distributed with rectangular or rhombus.
Lower floor's silica gel 103, it is formed at the first semispherical silicon glue lens 102 and blue chip upper surface；
Wherein, lower floor's silica gel 103 does not contain fluorescent material and is the silica gel of high temperature resistant material.
Preferably, the material of lower floor's silica gel 103 can be modified epoxy, organosilicon material.
Second semispherical silicon glue lens 104, it is formed at the upper surface of lower floor's silica gel 103；
Wherein, a diameter of 10~200 μm of the second semispherical silicon glue lens 104, between the second semispherical silicon glue lens 104
Spacing be 10~200 μm, the second semispherical silicon glue lens 104 contain yellow fluorescent powder, the second semispherical silicon glue lens 104
Refractive index is more than the refractive index of upper strata silica gel 105.
Preferably, the material of the second semispherical silicon glue lens 104 can be polycarbonate, polymethyl methacrylate, glass
Glass.
Preferably, as shown in Fig. 6 a~6b, the first semispherical silicon glue lens 102 and the second spherical silica gel lens 104 can be with
Rectangular or rhombus is evenly distributed, and can align row between the first semispherical silicon glue lens 102 and the second spherical silica gel lens 104
Row, can also be staggered.
Preferably, the first semispherical silicon glue lens 102 and the second semispherical silicon glue lens 104 are planoconvex lens, focal length f=R/
(n2-n1), then the distance between the first semispherical silicon glue lens 102 and the second semispherical silicon glue lens 104 0≤x≤2R/ (n2-
N1), it is simple in order to calculate, if n1For the refractive index of lower floor's silica gel 103, n2For the refractive index of the first semispherical silicon glue lens 102, R
For the radius of the first semispherical silicon glue lens 102.
Upper strata silica gel 105, it is formed at the second semispherical silicon glue lens 104 and the upper surface of lower floor's silica gel 103；
Wherein, the thickness of upper strata silica gel 105 is 50~500 μm, refractive index≤1.5, and upper strata silica gel 105 contains yellow fluorescence
Powder, and the refractive index of upper strata silica gel 105 is more than the refractive index of lower floor's silica gel 103.
Preferably, the material of upper strata silica gel 105 can be epoxy resin, modified epoxy, organosilicon material, methyl silicon
Rubber, phenyl organic silicon rubber.
The embodiment of the present invention, possesses following advantage：
1st, the silica gel being in contact in LED encapsulation structure with LED chip is resistant to elevated temperatures silica gel, solves silica gel in high temperature bar
The problem of light transmittance declines because caused by turning to be yellow silica gel aging under part.
2nd, the refractive index of lower floor's silica gel of the LED encapsulation structure is less than the refractive index of upper strata silica gel, the first hemispherical silica gel
The refractive index of lens is more than the refractive index of lower floor's silica gel and the refractive index of the second semispherical silicon glue lens is more than and upper strata silica gel
Refractive index, this setup can improve the light transmittance of LED chip, and the light for enabling LED chip to be emitted is more
Shone out through encapsulating material.
3rd, upper strata silica gel is hemispherical shape, and LED beam angle can be made maximum.
4th, LED encapsulation structure at the middle and upper levels silica gel refractive index be more than lower floor's silica gel refractive index, layer of silica gel refractive index is under
Increase can suppress to be totally reflected successively upwards, improve LED emergent light, reduce because the light for being totally reflected to inside is caused by absorbing
Useless heat.
Example IV
Please again in the lump referring to Fig. 4, Fig. 5 and Fig. 6 a~6b.On the basis of above-described embodiment, the present embodiment will be to multilayer
LED encapsulation structure is introduced, and the LED encapsulation structure includes：
Heat-radiating substrate；
Wherein, as shown in figure 4, the material of heat-radiating substrate is iron, the thickness D of heat-radiating substrate is 0.5~10mm, in radiating base
Manhole is provided with plate, manhole arranges in the width direction inside heat-radiating substrate, and is in one with heat-radiating substrate plane
The manhole at clamp angle；Wherein, the quantity of manhole is n and n >=2, diameter (radius R) are 0.1~0.3mm, and circle is logical
Hole and the angle of heat-radiating substrate plane are 1~10 °, and the spacing A between manhole is 0.5~10mm.
Blue chip, it is formed at heat-radiating substrate upper surface；
Wherein, as shown in figure 5, blue chip structure includes：Substrate 201, the GaN cushions 202 on substrate 201,
GaN layer 203 on GaN cushions 202, the p-type GaN SQWs wide bandgap layer 204 in position GaN layer 203, positioned at p-type GaN
InGaN layer 205 in SQW wide bandgap layer 204, the p-type GaN SQWs wide bandgap layer 206 in InGaN layer 205, position
AlGaN barrier layers 207 in p-type GaN SQWs wide bandgap layer 206, the p-type GaN layer on AlGaN barrier layers 207
208, the anode electrode 209 in p-type GaN layer 208 and the cathode electrode 210 in GaN layer 203.
First semispherical silicon glue lens, are formed at heat-radiating substrate and blue chip upper surface；
Wherein, a diameter of 10~200 μm of the first semispherical silicon glue lens, the spacing between the first semispherical silicon glue lens
For 10~200 μm, the first semispherical silicon glue lens do not contain fluorescent material, and the refractive index of the first semispherical silicon glue lens is more than first
The refractive index of layer silica gel.
First layer silica gel, it is formed at the first semispherical silicon glue lens and blue chip upper surface；
Wherein, first layer silica gel does not contain fluorescent material and is the silica gel of high temperature resistant material.
Preferably, the material of first layer silica gel can be modified epoxy, organosilicon material.
N semispherical silicon glue lens, it is formed at N-1 layer silica gel upper surface；
Wherein, a diameter of 10~200 μm of N >=2, N semispherical silicon glue lens, between N semispherical silicon glue lens
Spacing is 10~200 μm, and N semispherical silicon glue lens do not contain fluorescent material, and the refractive indexes of N semispherical silicon glue lens is more than the
The refractive index of N layer silica gel.
N-th layer silica gel, it is formed at N-1 layers silica gel and N semispherical silicon glue lens upper surface；
Wherein, n-th layer silica gel does not contain fluorescent material and is the silica gel of high temperature resistant material.
Preferably, the material of n-th layer silica gel can be modified epoxy, organosilicon material.
N+1 semispherical silicon glue lens, it is formed at n-th layer silica gel upper surface；
Wherein, a diameter of 10~200 μm of N+1 semispherical silicons glue lens, between N+1 semispherical silicon glue lens between
Away from for 10~200 μm, N+1 semispherical silicons glue lens 104 contain yellow fluorescent powder, the refraction of N+1 semispherical silicon glue lens
Rate is more than the refractive index of N+1 layer silica gel.
Preferably, the material of N+1 semispherical silicons glue lens can be polycarbonate, polymethyl methacrylate, glass.
Preferably, as shown in Fig. 6 a~6b, the first semispherical silicon glue lens to N+1 semispherical silicons glue lens can be in square
Shape or rhombus are evenly distributed, and the first semispherical silicon glue lens can also may be used between N+1 semispherical silicon glue lens with alignment
To be staggered.
Preferably, N-1 semispherical silicons glue lens and N semispherical silicons glue lens are planoconvex lens, focal length f=R/ (n2-
N1), then the distance between N-1 semispherical silicons glue lens and N semispherical silicon glue lens 0≤x≤2R/ (n2-n1), in order to count
Calculate simply, if n1For the refractive index of N-1 layer silica gel, n2For the refractive index of N-1 semispherical silicon glue lens, R is N-1 hemisphere
The radius of shape silica-gel lens.
N+1 layer silica gel, it is formed at N+1 semispherical silicons glue lens and n-th layer silica gel upper surface；
Wherein, the thickness of N+1 layers silica gel be 50~500 μm, refractive index≤1.5, the N+1 layer silica gel contain yellow fluorescence
Powder, and the refractive index of N+1 layer silica gel is more than the refractive index of n-th layer silica gel.
Preferably, the material of N+1 layers silica gel can be epoxy resin, modified epoxy, organosilicon material, methyl silicon
Rubber, phenyl organic silicon rubber.
In summary, specific case used herein is to a kind of original of LED encapsulation method provided in an embodiment of the present invention
Reason and embodiment are set forth, and the explanation of above example is only intended to help method and its core think of for understanding the present invention
Think；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, in specific embodiments and applications
There will be changes, in summary, this specification content should not be construed as limiting the invention, protection scope of the present invention
It should be defined by appended claim.
Claims (10)
- A kind of 1. LED encapsulation method, it is characterised in that including：Choose heat-radiating substrate；Blue chip is welded on the heat-radiating substrate using welding procedure；The growth regulation half spherical silica gel lens on the blue chip；Lower floor's silica gel is grown on the blue chip and on the first semispherical silicon glue lens；The semispherical silicon glue lens of growth regulation two on lower floor's silica gel；Upper strata silica gel is grown on lower floor's silica gel and on the second semispherical silicon glue lens to complete the envelope of the LED Dress.
- 2. according to the method for claim 1, it is characterised in that blue chip is welded on the radiating using welding procedure On substrate, including：The printing solder on the blue chip；Die bond inspection is carried out to the blue chip；The blue chip is welded using Reflow Soldering welding procedure.
- 3. according to the method for claim 1, it is characterised in that growth regulation half spherical silica gel is saturating on the blue chip Mirror, including：The first layer of silica gel is coated on the blue chip；The first hemispherical is set to form the first hemispherical silica gel in first layer of silica gel；At a temperature of 90 DEG C~125 DEG C, first layer of silica gel is toasted into 15~60min；First hemispherical is removed, forms the first semispherical silicon glue lens.
- 4. according to the method for claim 1, it is characterised in that using coating processes on the blue chip and described the Lower floor's silica gel is grown on half spherical silica gel lens.
- 5. according to the method for claim 1, it is characterised in that the hemispherical silica gel of growth regulation two is saturating on lower floor's silica gel Mirror, including：The second layer of silica gel is coated on lower floor's silica gel；The second hemispherical is set to form the second hemispherical silica gel in second layer of silica gel；At a temperature of 90 DEG C~125 DEG C, second layer of silica gel is toasted into 15~60min；Second hemispherical is removed, forms the second semispherical silicon glue lens.
- 6. according to the method for claim 1, it is characterised in that on lower floor's silica gel and the second hemispherical silica gel Upper strata silica gel is grown on lens, including：The 3rd layer of silica gel is coated on lower floor's silica gel and the second semispherical silicon glue lens；The 3rd hemispherical is set to form the 3rd hemispherical silica gel in the 3rd layer of silica gel；At a temperature of 90 DEG C~125 DEG C, the 3rd layer of silica gel is toasted into 15~60min；The 3rd hemispherical is removed, forms the upper layer of silica gel.
- 7. according to the method for claim 1, it is characterised in that the material of the heat-radiating substrate be iron, thickness for 0.5~ 10mm。
- 8. according to the method for claim 8, it is characterised in that manhole, the circle are provided with the heat-radiating substrate Shape through hole, which has, to be arranged along the heat-radiating substrate width and with the heat-radiating substrate plane into 1~10 ° of angle；Wherein, A diameter of 0.1~0.3mm of the manhole, the spacing between the manhole is 0.5~10mm.
- 9. according to the method for claim 8, it is characterised in that the manhole in the heat-radiating substrate directly casts to be formed Or by the way that directly fluting is formed on the heat-radiating substrate.
- 10. according to the method for claim 1, it is characterised in that the second semispherical silicon glue lens and the upper silica gel Layer contains yellow fluorescent powder.
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| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
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| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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| CN102422081A (en) * | 2009-05-12 | 2012-04-18 | 飞利浦拉米尔德斯照明设备有限责任公司 | Led lamp producing sparkle |
| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN102468409A (en) * | 2010-11-15 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Light emitting diode components integrated with thermoelectric devices and method of manufacturing the same |
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