CN107833951B - LED packaging method - Google Patents
LED packaging method Download PDFInfo
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- CN107833951B CN107833951B CN201711215652.7A CN201711215652A CN107833951B CN 107833951 B CN107833951 B CN 107833951B CN 201711215652 A CN201711215652 A CN 201711215652A CN 107833951 B CN107833951 B CN 107833951B
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- 238000000034 method Methods 0.000 title claims abstract description 36
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- 239000000741 silica gel Substances 0.000 claims abstract description 239
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 239
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 230000017525 heat dissipation Effects 0.000 claims abstract description 72
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052742 iron Inorganic materials 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 11
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- 238000000576 coating method Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000005476 soldering Methods 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
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- 238000002834 transmittance Methods 0.000 abstract description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED packaging method, which comprises the following steps: selecting a heat dissipation substrate; welding a blue light chip on the heat dissipation substrate by using a welding process; growing a first hemispherical silica gel lens on the blue light chip; growing a lower layer of silica gel on the blue light chip and the first hemispherical silica gel lens; growing a second hemispherical silica gel lens on the lower silica gel; and growing an upper layer of silica gel on the lower layer of silica gel and the second hemispherical silica gel lens to finish the packaging of the LED. According to the LED packaging structure, the heat dissipation effect of the LED is improved by adopting the iron heat dissipation substrate with the inclined through hole structure, and the LED chip can be better irradiated out through the packaging material by adopting the spherical silica gel lens structure, so that the light transmittance is improved.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to an LED packaging method.
Background
The first LED LEDs in the market in the middle of the 20 th century have made dramatic and significant progress over the course of decades. The luminous efficiency of the LED reaches the level of a thermal radiation light source, the light intensity reaches the candle level, the radiation color is rich, especially the emergence of a white light LED, and the application of an LED product in the field of illumination becomes a new product with great influence.
The LED uses electrons and holes in a semiconductor material to combine with each other and release energy, so that the energy band level changes to emit light to display the released energy. The LED has the advantages of small volume, long service life, low driving voltage, low power consumption, high reaction rate, good shock resistance and the like, and is widely applied to the fields of signal indication, digital display and the like. With the continuous progress of the technology, the development of the ultra-bright LED is successful, especially the development of the white light LED is successful, so that the ultra-bright LED is increasingly used in the fields of colored lamp decoration and even illumination. In recent years, most LEDs adopt a mode of adding blue phosphor, red phosphor and green phosphor to an ultraviolet lamp wick to generate white light to realize illumination, and the mode has the following problems.
First, foreign researchers have found that the light scattering properties of phosphors are such that a significant fraction of normally incident light is backscattered. In the current high-power LED packaging structure, fluorescent powder is generally directly coated on the surface of a chip. Since the chip absorbs the backscattered light, the light extraction efficiency of the package is reduced by the direct coating method, and the quantum efficiency of the phosphor is significantly reduced by the high temperature generated by the chip, which seriously affects the lumen efficiency of the package. Secondly, the light emitted by the LED light source is generally distributed in a divergent manner, so that the illumination brightness of the light source is not concentrated enough, and secondary shaping is generally required by an external lens to meet the illumination requirements of specific occasions, thereby increasing the production cost. Thirdly, because the high-power LED is used for occasions such as illumination and the like, the cost control is very important, the structural size of the external heat sink of the high-power LED lamp is not allowed to be too large, active heat dissipation in modes such as a power-on fan and the like cannot be allowed, the safe junction temperature of the LED chip in work is within 110 ℃, if the junction temperature is too high, a series of problems such as light intensity reduction, spectrum deviation, color temperature rise, thermal stress increase, chip accelerated aging and the like can be caused, the service life of the LED is greatly shortened, and meanwhile, the accelerated aging of the packaging adhesive colloid filled on the chip can be caused, and the light transmission efficiency of the LED is. At present, most of chips are packaged on a thin metal heat dissipation substrate, and the metal heat dissipation substrate is thin, has small heat capacity and is easy to deform, so that the contact between the metal heat dissipation substrate and the bottom surface of a heat dissipation plate is not tight enough, and the heat dissipation effect is affected. Finally, only a part of energy in the input power of the LED is converted into light energy, and the rest of energy is converted into heat energy, so how to control the energy of the LED chip, especially the LED chip with high power density, is an important problem that LED manufacturing and lamps should solve.
Disclosure of Invention
Therefore, in order to solve the technical defects and shortcomings of the prior art, the invention provides an LED packaging method.
Specifically, an embodiment of the present invention provides an LED packaging method, including:
selecting a heat dissipation substrate;
welding a blue light chip on the heat dissipation substrate by using a welding process;
growing a first hemispherical silica gel lens on the blue light chip;
growing a lower layer of silica gel on the blue light chip and the first hemispherical silica gel lens;
growing a second hemispherical silica gel lens on the lower silica gel;
and growing an upper layer of silica gel on the lower layer of silica gel and the second hemispherical silica gel lens to finish the packaging of the LED.
In one embodiment of the present invention, the soldering the blue light chip on the heat dissipation substrate by using a soldering process includes:
printing solder on the blue light chip;
carrying out die bonding inspection on the blue light chip;
and welding the blue light chip by using a reflow soldering process.
In one embodiment of the present invention, growing a first hemispherical silica gel lens on the blue light chip comprises:
coating a first silica gel layer on the blue light chip;
arranging a first hemispherical mold on the first silica gel layer to form first hemispherical silica gel;
baking the first silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and removing the first hemispherical mold to form the first hemispherical silica gel lens.
In one embodiment of the present invention, a lower layer of silicone gel is grown on the blue light chip and on the first hemispherical silicone lens using a coating process.
In one embodiment of the present invention, growing a second hemispherical silicone lens on the underlying silicone, comprises:
coating a second silica gel layer on the lower silica gel;
arranging a second hemispherical mold on the second silica gel layer to form second hemispherical silica gel;
baking the second silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and removing the second hemispherical mold to form the second hemispherical silica gel lens.
In one embodiment of the present invention, growing an upper layer of silicone gel on the lower layer of silicone gel and on the second hemispherical silicone gel lens comprises:
coating a third silica gel layer on the lower silica gel and the second hemispherical silica gel lens;
arranging a third hemispherical mold on the third silica gel layer to form third hemispherical silica gel;
baking the third silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and removing the third hemispherical die to form the upper silica gel layer.
In one embodiment of the invention, the heat dissipation substrate is made of iron and has a thickness of 0.5-10 mm.
In one embodiment of the invention, a circular through hole is arranged in the heat dissipation substrate, and the circular through hole is arranged along the width direction of the heat dissipation substrate and forms an included angle of 1-10 degrees with the plane of the heat dissipation substrate; the diameter of the circular through holes is 0.1-0.3 mm, and the distance between the circular through holes is 0.5-10 mm.
In one embodiment of the present invention, the circular through-hole in the heat-dissipating substrate is directly cast or formed by directly slotting on the heat-dissipating substrate.
In an embodiment of the invention, the second hemispherical silica gel lens and the upper silica gel layer contain yellow phosphor.
The embodiment of the invention has the following advantages:
1. the heat dissipation substrate in the LED packaging structure is an iron heat dissipation substrate, and the iron heat dissipation substrate has the characteristics of large heat capacity, good heat conduction effect, difficulty in deformation and close contact with a heat dissipation device, so that the heat dissipation effect of the LED packaging structure is improved; in addition, the oblique through holes are formed in the iron radiating substrate in the LED packaging structure, so that the manufacturing cost of the LED is reduced while the strength of the LED is almost unchanged, channels for air circulation can be increased by means of the middle oblique through holes, the heat convection rate of air is improved by means of a chimney effect, and the radiating effect of the LED is improved.
2. The fluorescent powder and the LED chip in the LED packaging structure are separated, so that the problem of the reduction of the quantum efficiency of the fluorescent powder caused under the high-temperature condition is solved.
3. The content of the yellow fluorescent powder of the upper layer covering silica gel is changed, so that the color of light can be continuously adjusted to emit white light, and the color temperature of a light source can be adjusted by utilizing the yellow fluorescent powder.
4. The lens is formed in the silica gel by utilizing the characteristic that different types of silica gel and fluorescent powder gel have different refractive indexes, so that the problem of light emission dispersion of the LED chip is solved, and light emitted by a light source can be more concentrated; through the mode of arranging that changes the hemisphere silica gel lens in the LED packaging structure, can guarantee the light of light source and distinguish evenly distributed in the concentration, the mode of arranging like hemisphere silica gel lens is rectangle or rhombus and arranges.
5. The hemispherical lens arranged in the LED packaging structure can change the light transmission direction, effectively inhibit the total reflection effect, facilitate more light to be emitted outside the LED, increase the external quantum efficiency of the LED device and improve the luminous efficiency of the LED.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a flowchart of an LED packaging method according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of an LED packaging method according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of an LED package structure according to an embodiment of the invention;
fig. 4 is a schematic cross-sectional view of a heat dissipation substrate according to an embodiment of the invention;
FIG. 5 is a schematic cross-sectional view of a blue-light chip according to an embodiment of the present invention;
FIG. 6a is a schematic cross-sectional view of a hemispherical silica gel lens according to an embodiment of the invention;
fig. 6b is a schematic cross-sectional view of another hemispherical silicone lens according to an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Example one
Referring to fig. 1, fig. 1 is a flowchart of an LED packaging method according to an embodiment of the present invention. The method comprises the following steps:
step a, selecting a heat dissipation substrate;
b, welding the blue light chip on the heat dissipation substrate by using a welding process;
c, growing a first hemispherical silica gel lens on the blue light chip;
d, growing a lower layer of silica gel on the blue light chip and the first hemispherical silica gel lens;
e, growing a second hemispherical silica gel lens on the lower layer of silica gel;
and f, growing upper-layer silica gel on the lower-layer silica gel and the second hemispherical silica gel lens to finish the packaging of the LED.
Preferably, the heat dissipation substrate is made of iron and has a thickness of 0.5-10 mm.
Preferably, a circular through hole is formed in the heat dissipation substrate, and the circular through hole is arranged along the width direction of the heat dissipation substrate and forms an included angle of 1-10 degrees with the plane of the heat dissipation substrate; the diameter of the circular through holes is 0.1-0.3 mm, and the distance between the circular through holes is 0.5-10 mm.
Preferably, the circular through hole in the heat dissipation substrate is directly cast or formed by directly slotting on the heat dissipation substrate.
Wherein, step b includes:
b1, printing solder on the blue light chip;
step b2, carrying out die bonding inspection on the blue light chip;
and b3, soldering the blue light chip by using a reflow soldering process.
Wherein, step c includes:
step c1, coating a first silica gel layer on the blue light chip;
step c2, arranging a first hemispherical mold on the first silica gel layer to form first hemispherical silica gel;
step c3, baking the first silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and c4, removing the first hemispherical mold to form the first hemispherical silica gel lens.
Wherein, step d includes: and growing a lower layer of silica gel 103 on the blue light chip and the first hemispherical silica gel lens by using a coating process.
Wherein, step e includes:
step e1, coating a second silica gel layer on the lower silica gel layer;
step e2, arranging a second hemispherical mold on the second silica gel layer to form second hemispherical silica gel;
step e3, baking the second silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and e4, removing the second hemispherical mold to form the second hemispherical silicone lens.
Wherein, step f includes:
step f1, coating a third silica gel layer on the lower silica gel layer and the second hemispherical silica gel lens;
step f2, arranging a third hemispherical mold on the third silica gel layer to form third hemispherical silica gel;
step f3, baking the third silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and f4, removing the third hemispherical die to form the upper silica gel layer.
Preferably, the second hemispherical silica gel lens and the upper silica gel layer contain yellow phosphor.
The beneficial effects of the invention are as follows:
the heat dissipation substrate in the LED packaging structure is an iron heat dissipation substrate, and the iron heat dissipation substrate has the characteristics of large heat capacity, good heat conduction effect, difficulty in deformation and close contact with a heat dissipation device, so that the heat dissipation effect of the LED packaging structure is improved; in addition, the oblique through holes are formed in the iron radiating substrate in the LED packaging structure, so that the manufacturing cost of the LED is reduced while the strength of the LED is almost unchanged, channels for air circulation can be increased by means of the middle oblique through holes, heat convection among air is fully utilized, and the radiating effect of the LED is improved.
The fluorescent powder and the LED chip in the LED packaging structure are separated, so that the problem of reduction of quantum efficiency of the fluorescent powder caused under a high-temperature condition is solved.
3. By changing the content of the yellow fluorescent powder in the silica gel, the color of light can be continuously adjusted to become white light, and the color temperature of a light source can also be adjusted.
4. The lens is formed in the silica gel by utilizing the characteristic that different types of silica gel and fluorescent powder gel have different refractive indexes, so that the problem of light emission dispersion of the LED chip is solved, and light emitted by a light source can be more concentrated; through the mode of arranging that changes the hemisphere silica gel lens in the LED packaging structure, can guarantee the light of light source and distinguish evenly distributed in the concentration, the mode of arranging like hemisphere silica gel lens is rectangle or rhombus and arranges.
Example two
Referring to fig. 2, fig. 2 is a schematic flow chart illustrating an LED packaging method according to an embodiment of the present invention. On the basis of the above embodiments, the present embodiment will describe the process flow of the present invention in more detail. The method comprises the following steps:
s1, preparing a heat dissipation substrate;
s11, preparing a support/heat dissipation substrate;
specifically, a heat dissipation substrate 101 with the thickness of 0.5-10 mm and made of iron is selected, and the heat dissipation substrate 101 is cut;
s12, cleaning the support/heat dissipation substrate;
specifically, stains, especially oil stains, on the radiating substrate 101 and the support are cleaned;
s13, baking the support/heat dissipation substrate;
specifically, the cleaned heat dissipation substrate 101 and the rack are baked, and the heat dissipation substrate 101 and the rack are kept dry.
Preferably, a circular through hole which is along the width direction and forms a certain included angle with the plane of the heat dissipation substrate 101 is formed inside the heat dissipation substrate 101; the number of the circular through holes is n, n is larger than or equal to 2, the diameter of the circular through holes is 0.1-0.3 mm, the included angle between the circular through holes and the plane of the radiating substrate 101 is 1-10 degrees, and the distance between the circular through holes is 0.5-10 mm.
Preferably, the circular through-hole in the heat dissipation substrate 101 is formed by a direct casting process or directly slotting in the width direction on the heat dissipation substrate 101.
S2, chip welding;
s21, printing solder on the blue light chip;
s22, carrying out die bonding inspection on the blue-light chip printed with the solder;
s23, soldering the blue chip on the heat dissipation substrate 101 by using a reflow soldering process.
S3, preparing fluorescent powder glue;
s31, preparing fluorescent powder glue;
specifically, yellow fluorescent powder is prepared and mixed in the second silica gel layer and the third silica gel layer respectively;
s32, carrying out color test on the mixed second silica gel layer and the mixed third silica gel layer;
and S33, baking the third silica gel layer qualified in the color test.
Preferably, the material of the yellow phosphor is (YGd)3(Al,Ga)5O12:Ce、(Ca,Sr,Ba)2SiO4:Eu、AESi2O2N2Eu or M-alpha-SiAlON, Eu, and the wavelength range of the yellow fluorescent powder is 570 nm-620 nm.
S4, preparing a first hemispherical silica gel lens 102;
s41, coating a first silica gel layer on the heat dissipation substrate 101 provided with the blue light chip, providing a first hemispherical mold on the first silica gel layer, and forming a first hemispherical silica gel having a hemispherical shape on the first silica gel layer by using the first hemispherical mold;
s42, baking the first hemispherical silica gel provided with the first hemispherical mold, wherein the baking temperature is 90-125 ℃, and the baking time is 15-60 min, so that the first hemispherical silica gel is solidified;
s43, after the baking is completed, the first hemispherical mold disposed in the first silicone rubber layer is removed, and the first hemispherical silicone rubber lens 102 is completed.
Preferably, the first hemispherical silica lens 102 does not contain phosphor;
s5, preparing the lower layer silica gel 103;
specifically, the lower layer silicone rubber 103 is coated on the first hemispherical silicone rubber lens 102, completing the preparation of the lower layer silicone rubber 103.
Preferably, the lower layer of silica gel 103 does not contain phosphor;
s6, preparing a second hemispherical silica gel lens 104;
s61, coating a second silica gel layer on the upper surface of the lower silica gel layer 103, arranging a second hemispherical mold on the second silica gel layer, and forming a second hemispherical silica gel with a hemispherical shape on the second silica gel layer by using the second hemispherical mold;
s62, baking the second hemispherical silica gel provided with the second hemispherical die at the baking temperature of 90-125 ℃ for 15-60 min to solidify the second hemispherical silica gel;
s63, after the baking is completed, the second hemispherical mold disposed in the second silicone layer is removed, and the second hemispherical silicone lens 104 is completed.
Preferably, the second hemispherical silica lens 104 contains yellow phosphor;
s7, preparing upper-layer silica gel 105;
s71, coating a third silicone gel layer on the second hemispherical silicone lens 104;
s72, arranging a third hemispherical mold on the third silica gel layer, and forming a third hemispherical silica gel with a hemispherical shape on the third silica gel layer by using the third hemispherical mold;
s73, baking the third hemispherical silica gel provided with the third hemispherical die at the baking temperature of 90-125 ℃ for 15-60 min to solidify the third hemispherical silica gel;
and S74, after baking, removing the third hemispherical mold arranged in the third silica gel layer, and finishing the preparation of the upper silica gel layer 105.
Preferably, the upper layer silica gel 105 contains yellow phosphor, and the color temperature of light can be continuously adjusted by changing the content of the yellow phosphor in the upper layer silica gel 105.
S8, long-time baking;
specifically, the heat dissipation substrate 101, the blue light chip, the lower layer silica gel 103 of the first hemispherical silica gel lens 102, the second hemispherical silica gel lens 104 and the upper layer silica gel 105 are integrally baked, the baking temperature is 100-150 ℃, the baking time is 4-12 hours, and the LED packaging is completed;
and S9, testing and sorting the packaged LEDs.
And S10, packaging the LED packaging structure qualified by the test.
According to the method of the embodiment, the LED package structure with the multi-layer hemispherical silica gel lens can be prepared, and the LED package structure with the multi-layer hemispherical silica gel lens prepared by the preparation method of the invention is not understood as a new invention.
EXAMPLE III
Referring to fig. 3, fig. 4, fig. 5 and fig. 6a to fig. 6b together, fig. 3 is a schematic cross-sectional view of an LED package structure according to an embodiment of the present invention, fig. 4 is a schematic cross-sectional view of a heat dissipation substrate according to an embodiment of the present invention, fig. 5 is a schematic cross-sectional view of a blue light chip according to an embodiment of the present invention, fig. 6a is a schematic cross-sectional view of a hemispherical silica gel lens according to an embodiment of the present invention, and fig. 6b is a schematic cross-sectional view of another hemispherical silica gel lens according to an embodiment of the present invention. On the basis of the above embodiments, this embodiment will describe an LED package structure of the present invention, which includes:
a heat dissipation substrate 101;
as shown in fig. 4, the heat dissipation substrate 101 is made of iron, the thickness D of the heat dissipation substrate 101 is 0.5 to 10mm, circular through holes are formed in the heat dissipation substrate 101, and the circular through holes are arranged in the heat dissipation substrate 101 along the width direction and form a certain included angle with the plane of the heat dissipation substrate 101; the number of the circular through holes is n, n is larger than or equal to 2, the diameter (radius R) is 0.1-0.3 mm, the included angle between the circular through holes and the plane of the radiating substrate 101 is 1-10 degrees, and the distance A between the circular through holes is 0.5-10 mm.
The blue light chip is formed on the upper surface of the heat dissipation substrate 101;
as shown in fig. 5, the blue chip structure includes: the GaN-based substrate comprises a substrate 201, a GaN buffer layer 202 located on the substrate 201, a GaN layer 203 located on the GaN buffer layer 202, a P-type GaN quantum well wide band gap layer 204 located on the GaN layer 203, an InGaN layer 205 located on the P-type GaN quantum well wide band gap layer 204, a P-type GaN quantum well wide band gap layer 206 located on the InGaN layer 205, an AlGaN barrier layer 207 located on the P-type GaN quantum well wide band gap layer 206, a P-type GaN layer 208 located on the AlGaN barrier layer 207, an anode electrode 209 located on the P-type GaN layer 208, and a cathode electrode 210 located on the GaN layer 203.
The first hemispherical silica gel lens 102 is formed on the upper surfaces of the heat dissipation substrate 101 and the blue light chip;
the diameter of the first hemispherical silica gel lens 102 is 10-200 μm, the distance between the first hemispherical silica gel lenses 102 is 10-200 μm, the first hemispherical silica gel lens 102 does not contain fluorescent powder, and the refractive index of the first hemispherical silica gel lens 102 is greater than that of the lower layer silica gel 103.
Preferably, the material of the first hemispherical silicone lens 102 may be polycarbonate, polymethylmethacrylate, or glass.
Preferably, as shown in fig. 6a to 6b, the first spherical silicone lenses 102 may be uniformly arranged in a rectangular or rhombic shape.
The lower layer silica gel 103 is formed on the upper surfaces of the first hemispherical silica gel lens 102 and the blue light chip;
wherein, the lower layer silica gel 103 does not contain fluorescent powder and is a silica gel made of high temperature resistant material.
Preferably, the material of the lower layer silicone rubber 103 can be modified epoxy resin or organosilicon material.
A second hemispherical silica gel lens 104 formed on the upper surface of the lower silica gel 103;
the diameter of the second hemispherical silica gel lenses 104 is 10-200 μm, the distance between the second hemispherical silica gel lenses 104 is 10-200 μm, the second hemispherical silica gel lenses 104 contain yellow fluorescent powder, and the refractive index of the second hemispherical silica gel lenses 104 is greater than that of the upper layer silica gel 105.
Preferably, the material of the second hemispherical silicone lens 104 may be polycarbonate, polymethylmethacrylate, or glass.
Preferably, as shown in fig. 6a to 6b, the first hemispherical silicone lenses 102 and the second hemispherical silicone lenses 104 may be uniformly arranged in a rectangular or rhombic shape, and the first hemispherical silicone lenses 102 and the second hemispherical silicone lenses 104 may be aligned or staggered.
Preferably, the first hemispherical silicone lens 102 and the second hemispherical silicone lens 104 are plano-convex lenses, and the focal length f is R/(n2-n1), then the distance between the first hemispherical silicone lens 102 and the second hemispherical silicone lens 104 is 0 ≦ x ≦ 2R/(n2-n1), and for simple calculation, let n be set as1Is the refractive index of the lower silica gel 103, n2Is the refractive index of the first hemispherical silicone lens 102, and R is the radius of the first hemispherical silicone lens 102.
An upper layer of silicone rubber 105 formed on the upper surfaces of the second hemispherical silicone lens 104 and the lower layer of silicone rubber 103;
the thickness of the upper layer silica gel 105 is 50-500 microns, the refractive index is less than or equal to 1.5, the upper layer silica gel 105 contains yellow fluorescent powder, and the refractive index of the upper layer silica gel 105 is larger than that of the lower layer silica gel 103.
Preferably, the material of the upper layer silicone rubber 105 can be epoxy resin, modified epoxy resin, silicone material, methyl silicone rubber, phenyl silicone rubber.
The embodiment of the invention has the following advantages:
1. the silica gel in contact with the LED chip in the LED packaging structure is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel under a high-temperature condition is solved.
2. The refractive index of this LED packaging structure's lower floor silica gel is less than the refractive index of upper silica gel, and the refractive index of first hemisphere silica gel lens is greater than the refractive index of lower floor silica gel and the refractive index of second hemisphere silica gel lens be greater than with the refractive index of upper silica gel, and the luminousness of LED chip can be improved to this kind of mode of setting, and the light that makes LED chip launch can be more shines away through packaging material.
3. The upper layer of silica gel is in a hemispherical shape, so that the light-emitting angle of the LED can be maximized.
4. The refractive index of the upper silica gel layer in the LED packaging structure is larger than that of the lower silica gel layer, the refractive index of the silica gel layer is sequentially increased from bottom to top to inhibit total reflection, emergent light of the LED is improved, and useless heat generated by absorbing light totally reflected to the inside is reduced.
Example four
Please refer to fig. 4, fig. 5 and fig. 6a to 6b again. On the basis of the above embodiments, the present embodiment will describe a multilayer LED package structure, which includes:
a heat-dissipating substrate;
as shown in fig. 4, the heat dissipation substrate is made of iron, the thickness D of the heat dissipation substrate is 0.5 to 10mm, circular through holes are formed in the heat dissipation substrate, and the circular through holes are arranged in the heat dissipation substrate along the width direction and form a certain included angle with the plane of the heat dissipation substrate; the number of the circular through holes is n, n is larger than or equal to 2, the diameter (radius R) is 0.1-0.3 mm, the included angle between each circular through hole and the plane of the radiating substrate is 1-10 degrees, and the distance A between the circular through holes is 0.5-10 mm.
The blue light chip is formed on the upper surface of the heat dissipation substrate;
as shown in fig. 5, the blue chip structure includes: the GaN-based substrate comprises a substrate 201, a GaN buffer layer 202 located on the substrate 201, a GaN layer 203 located on the GaN buffer layer 202, a P-type GaN quantum well wide band gap layer 204 located on the GaN layer 203, an InGaN layer 205 located on the P-type GaN quantum well wide band gap layer 204, a P-type GaN quantum well wide band gap layer 206 located on the InGaN layer 205, an AlGaN barrier layer 207 located on the P-type GaN quantum well wide band gap layer 206, a P-type GaN layer 208 located on the AlGaN barrier layer 207, an anode electrode 209 located on the P-type GaN layer 208, and a cathode electrode 210 located on the GaN layer 203.
The first hemispherical silica gel lens is formed on the upper surfaces of the heat dissipation substrate and the blue light chip;
the diameter of the first hemispherical silica gel lens is 10-200 mu m, the distance between the first hemispherical silica gel lenses is 10-200 mu m, the first hemispherical silica gel lens does not contain fluorescent powder, and the refractive index of the first hemispherical silica gel lens is larger than that of the first layer of silica gel.
The first layer of silica gel is formed on the upper surfaces of the first hemispherical silica gel lens and the blue light chip;
the first layer of silica gel does not contain fluorescent powder and is made of high-temperature-resistant silica gel.
Preferably, the material of the first layer of silicone gel can be modified epoxy resin or organosilicon material.
The Nth hemispherical silica gel lens is formed on the upper surface of the Nth-1 layer of silica gel;
wherein N is more than or equal to 2, the diameter of the Nth hemispherical silica gel lens is 10-200 μm, the distance between the Nth hemispherical silica gel lenses is 10-200 μm, the Nth hemispherical silica gel lens does not contain fluorescent powder, and the refractive index of the Nth hemispherical silica gel lens is greater than that of the Nth layer of silica gel.
The Nth layer of silica gel is formed on the upper surfaces of the Nth-1 layer of silica gel and the Nth hemispherical silica gel lens;
the Nth layer of silica gel does not contain fluorescent powder and is made of high-temperature-resistant materials.
Preferably, the material of the nth layer of silica gel can be modified epoxy resin or organosilicon material.
The (N + 1) th hemispherical silica gel lens is formed on the upper surface of the Nth layer of silica gel;
the diameter of the (N + 1) th hemispherical silica gel lens is 10-200 mu m, the distance between the (N + 1) th hemispherical silica gel lenses is 10-200 mu m, the (N + 1) th hemispherical silica gel lens 104 contains yellow fluorescent powder, and the refractive index of the (N + 1) th hemispherical silica gel lens is greater than that of the (N + 1) th layer of silica gel.
Preferably, the material of the N +1 th hemispherical silicone lens may be polycarbonate, polymethylmethacrylate, glass.
Preferably, as shown in fig. 6a to 6b, the first to (N + 1) th hemispherical silicone lenses may be uniformly arranged in a rectangular or rhombic shape, and the first to (N + 1) th hemispherical silicone lenses may be aligned or staggered.
Preferably, the nth-1 th and nth hemispherical silicone lenses are plano-convex lenses, and the focal length f is R/(N2-N1), then the distance between the nth-1 th and nth hemispherical silicone lenses is 0 ≦ x ≦ 2R/(N2-N1), and for simple calculation, let N be set1Is the refractive index of the silica gel of the N-1 th layer, N2Is the refractive index of the (N-1) th hemispherical silica gel lens, and R is the radius of the (N-1) th hemispherical silica gel lens.
The (N + 1) th layer of silica gel is formed on the upper surfaces of the (N + 1) th hemispherical silica gel lens and the Nth layer of silica gel;
the thickness of the (N + 1) th layer of silica gel is 50-500 mu m, the refractive index is less than or equal to 1.5, the (N + 1) th layer of silica gel contains yellow fluorescent powder, and the refractive index of the (N + 1) th layer of silica gel is greater than that of the (N) th layer of silica gel.
Preferably, the material of the (N + 1) th layer of silicone rubber can be epoxy resin, modified epoxy resin, silicone material, methyl silicone rubber and phenyl silicone rubber.
In summary, the principle and implementation of the LED packaging method provided in the embodiments of the present invention are explained herein by applying specific examples, and the above descriptions of the embodiments are only used to help understand the method of the present invention and its core idea; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention, and the scope of the present invention should be subject to the appended claims.
Claims (9)
1. An LED packaging method, comprising: selecting a heat dissipation substrate;
welding a blue light chip on the heat dissipation substrate by using a welding process;
growing a first hemispherical silica gel lens on the blue light chip; the diameter of the first hemispherical silica gel lenses is 10-200 mu m, and the distance between the first hemispherical silica gel lenses is 10-200 mu m;
growing a lower layer of silica gel on the blue light chip and the first hemispherical silica gel lens;
growing a second hemispherical silica gel lens on the lower silica gel; the diameter of the second hemispherical silica gel lenses is 10-200 mu m, and the distance between the second hemispherical silica gel lenses is 10-200 mu m;
growing an upper layer of silica gel on the lower layer of silica gel and the second hemispherical silica gel lens to complete the packaging of the LED;
the refractive index of the lower layer silica gel is smaller than that of the upper layer silica gel, the refractive index of the first hemispherical silica gel lens is larger than that of the lower layer silica gel, and the refractive index of the second hemispherical silica gel lens is larger than that of the upper layer silica gel;
the first hemispherical silica gel lens and the second hemispherical silica gel lens are plano-convex lenses, the focal length f is R/(n2-n1), and the distance x between the first hemispherical silica gel lens and the second hemispherical silica gel lens is more than or equal to 0 and less than or equal to 2R/(n2-n 1); wherein n1 is the refractive index of the lower silica gel layer, n2 is the refractive index of the first hemispherical silica gel lens, and R is the radius of the first hemispherical silica gel lens;
the second hemispherical silica gel lens and the upper layer silica gel contain yellow fluorescent powder.
2. The method of claim 1, wherein soldering a blue chip on the heat-dissipating substrate using a soldering process comprises: printing solder on the blue light chip;
carrying out die bonding inspection on the blue light chip;
and welding the blue light chip by using a reflow soldering process.
3. The method of claim 1, wherein growing a first hemispherical silica lens on the blue chip comprises: coating a first silica gel layer on the blue light chip;
arranging a first hemispherical mold on the first silica gel layer to form first hemispherical silica gel;
baking the first silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and removing the first hemispherical mold to form the first hemispherical silica gel lens.
4. The method of claim 1, wherein a coating process is used to grow a lower layer of silicone on the blue light chip and on the first hemispherical silicone lens.
5. The method of claim 1, wherein growing a second hemispherical silica gel lens on the underlying silica gel comprises: coating a second silica gel layer on the lower silica gel;
arranging a second hemispherical mold on the second silica gel layer to form second hemispherical silica gel;
baking the second silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and removing the second hemispherical mold to form the second hemispherical silica gel lens.
6. The method of claim 1, wherein growing an upper layer of silicone on the lower layer of silicone and on the second hemispherical silicone lens comprises: coating a third silica gel layer on the lower silica gel layer and the second hemispherical silica gel lens;
arranging a third hemispherical mold on the third silica gel layer to form third hemispherical silica gel;
baking the third silica gel layer for 15-60 min at the temperature of 90-125 ℃;
and removing the third hemispherical die to form the upper layer of silica gel.
7. The method of claim 1, wherein the heat-dissipating substrate is made of iron and has a thickness of 0.5 to 10 mm.
8. The method according to claim 7, wherein circular through holes are formed in the heat dissipation substrate, and the circular through holes are arranged along the width direction of the heat dissipation substrate and form an included angle of 1-10 degrees with the plane of the heat dissipation substrate; the diameter of the circular through holes is 0.1-0.3 mm, and the distance between the circular through holes is 0.5-10 mm.
9. The method of claim 8, wherein the circular through-hole in the heat-dissipating substrate is directly cast or formed by directly slotting on the heat-dissipating substrate.
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| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN102422081A (en) * | 2009-05-12 | 2012-04-18 | 飞利浦拉米尔德斯照明设备有限责任公司 | Led lamp producing sparkle |
| CN102468409A (en) * | 2010-11-15 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Light emitting diode components integrated with thermoelectric devices and method of manufacturing the same |
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| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| DE102015104220A1 (en) * | 2015-03-20 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device |
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| CN102422081A (en) * | 2009-05-12 | 2012-04-18 | 飞利浦拉米尔德斯照明设备有限责任公司 | Led lamp producing sparkle |
| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN102468409A (en) * | 2010-11-15 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Light emitting diode components integrated with thermoelectric devices and method of manufacturing the same |
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