CN101740706B - High-brightness white-light LED and manufacturing method thereof - Google Patents
High-brightness white-light LED and manufacturing method thereof Download PDFInfo
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- CN101740706B CN101740706B CN2009101888813A CN200910188881A CN101740706B CN 101740706 B CN101740706 B CN 101740706B CN 2009101888813 A CN2009101888813 A CN 2009101888813A CN 200910188881 A CN200910188881 A CN 200910188881A CN 101740706 B CN101740706 B CN 101740706B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
The invention discloses a high-brightness white-light LED and a manufacturing method thereof. The LED comprises a blue-light LED chip with a horizontal structure, a light reflecting cup, a conducting wire and an illuminator, wherein the LED chip is fixed in the light reflecting cup, the illuminator covers the LED chip, the LED chip is fixed at the cup bottom of the light reflecting cup by bottom glue, the bottom glue is fluorescent bottom glue with high heat conductivity, a light guide structure which enables emitting light from the LED chip to be led out to an outside space is arranged between the LED chip and the cup bottom of the light reflecting cup, one side of the LED chip, which is opposite to the cup bottom of the light reflecting cup, is provided with an outer fluorescent layer, and the anode and the cathode of the LED chip are electrically connected with an external positive electrode and an external negative electrode by the conducting wire respectively. The invention can effectively utilize the emitting light from the bottom surface of the LED chip and also emits out heat emitted by the LED chip effectively and quickly, so the LED chip works normally, thereby ensuring that the emitting light from the bottom surface of the LED chip can be effectively utilized assuredly.
Description
Technical field
The present invention relates to a kind of LED(light-emitting diode), relate in particular to a kind of high-brightness white-light LED and preparation method thereof.
Background technology
Because the development of LED technology, the LED Lighting Industry shoots up, and white light LEDs also receives much concern, and its encapsulation technology is in quick renewal.
The die bond primer of existing white light LEDs adopts elargol or insulating cement more, such as the Light-emitting Diode And Its Making Method that on August 29th, 2007, disclosed Chinese invention patent application disclosed for No. 200610033989.1, its method comprises successively a primer, die bond, bonding wire, adds steps such as being coated with fluorescent material, encapsulating moulding, back segment operation, light splitting, wherein, in a primer step, primer is the epoxy resin that is mixed with fluorescent material, purpose is the blue light that utilizes wafer to send toward under, makes it run into to excite behind the fluorescent material and become gold-tinted.
Need for satisfying the market, need to keep promotes the white light LEDs technology, but still has the various technical barriers that need to make great efforts to overcome, such as:
1) although above-mentioned patent application technology proposes to utilize the scheme of the downward institute of wafer blue light-emitting, but do not realize well in practice purpose, reason is that primer is thinner, the fluorescent material that blue light runs in the primer after wafer sends downwards becomes gold-tinted, namely reflected by cup very soon, pass through again primer, a part is absorbed by primer, a part is blocked by wafer itself and can not be effectively from the upper wafer surface outgoing, fluorescent material raises the cost on the primer although the result is owing to increasing, and still can not effectively reach the effect of utilizing luminous energy in the practice;
2) in high power LED structure, the wafer caloric value is large, adopt epoxy resin again the structure of the mixed fluorescent powder heat that can't effectively wafer be sent exhale rapidly so that wafer luminous efficiency step-down is difficult to increase whole amount of light on the contrary.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of high-brightness white-light LED and preparation method thereof, can effectively be used to the utilizing emitted light from the led chip bottom surface, the heat that effectively led chip is sent simultaneously exhales rapidly, so that led chip normal operation and then assurance can effectively be used to the utilizing emitted light from the led chip bottom surface really.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of high-brightness white-light LED is provided, comprise the horizontal structure blue-light LED chip, reflector, wire and light penetrating object, described led chip is fixed in the described reflector, described light penetrating object covers described led chip, described led chip is fixed on the cup end of reflector by primer, described primer is high heat conduction fluorescence primer, be provided with between at the bottom of described led chip and the described reflector cup and make the light guide structure that exports to outer space from the utilizing emitted light of led chip, the side of described led chip at the bottom of the reflector cup is provided with outer fluorescence coating, the both positive and negative polarity of led chip is electrically connected with external positive and negative electrode respectively by wire, it is characterized in that: described light guide structure comprises the first glue-line and the second glue-line that is set in turn at the bottom of the described reflector cup, described the first glue-line is mixed with high heat-conducting medium, and described the second glue-line is mixed with fluorescent material and high heat-conducting medium.
Wherein, described high heat-conducting medium is silver powder, and it is the above silica gel of 4000mpa.s that described the first glue-line and the second glue-line contain viscosity.
Wherein, described light guide structure comprises at least one inclination reflective surface between at the bottom of described primer and the reflector cup.
Wherein, described light guide structure is cone or halfpace, and the side of cone or halfpace is reflective surface, and cone or halfpace bottom is positioned at a side at the bottom of the reflector cup, and the top is positioned at led chip one side.
Wherein, described primer is provided with red light fluorescent powder, and described outer fluorescence coating is provided with gold-tinted fluorescent material.
Wherein, described blue-light LED chip is six luminescent wafers of horizontal structure, and its wavelength is between 445～465nm, and the thickness of described primer is 1/4～1 of described led chip thickness.
The invention has the beneficial effects as follows: be different from prior art and establish fluorescent material in the LED bottom of wafer but be difficult to improve the technological deficiency of light utilization efficiency, the present invention arranges between at the bottom of led chip and the reflector cup and makes the light guide structure that exports to outer space from the utilizing emitted light of led chip, to effectively guide away by the light through fluorescence excitation between at the bottom of led chip and the reflector cup, can owing between at the bottom of led chip and the reflector cup, losing and sheltering from and can't utilize, significantly not promote luminous efficiency and the luminosity of LED; Simultaneously, primer adopts highly heat-conductive material to make, and the heat that can effectively led chip be sent exhales rapidly, guarantees the normal operation of led chip, guarantees that also above-mentioned light guide structure can play a role really, increases whole amount of light.
Description of drawings
Fig. 1 is the structural representation of high-brightness white-light LED of the present invention;
Fig. 2 is the embodiment enlarged diagram of regional H among Fig. 1;
Fig. 3 is another embodiment enlarged diagram of regional H among Fig. 1;
Fig. 4 is the flow chart of the manufacture method embodiment of high-brightness white-light LED of the present invention.
Embodiment
By describing technology contents of the present invention, structural feature in detail, being realized purpose and effect, below in conjunction with execution mode and cooperate accompanying drawing to give in detail explanation.
See also Fig. 1, Fig. 2 and Fig. 3, high-brightness white-light LED of the present invention comprises:
Horizontal structure blue-light LED chip 10, reflector 20, wire 30 and light penetrating object 40, described led chip 10 are fixed in the described reflector 20, and described light penetrating object 40 covers described led chip 10.
Described led chip 10 is fixed on the cup end of reflector 20 by primer 50, described primer 50 is high heat conduction fluorescence primer, be provided with between at the bottom of 20 glasss of described led chip 10 and described reflectors the light guide structure that exports to outer space from the utilizing emitted light of led chip 10 (is indicated among Fig. 1, be denoted as 51 and 52 among Fig. 2, be 80 among Fig. 3), the side of described led chip 10 at the bottom of 20 glasss of the reflectors is provided with outer fluorescence coating 60, and the both positive and negative polarity of led chip 10 is electrically connected with external positive and negative electrode 70 respectively by wire 30.
During work, led chip 10 fronts, namely the side emission blue light at the bottom of 20 glasss of the reflectors becomes gold-tinted by outer fluorescence coating 60 rear portions, and gold-tinted becomes first's white light emission with remaining blue light goes out, and is the human eye finding; And the bottom surface of led chip 10, namely the side at the bottom of 20 glasss of the contiguous reflectors is also launched blue light simultaneously, become gold-tinted by at least a portion behind the high heat conduction fluorescence primer, and under the light guide structure guiding of this part gold-tinted between at the bottom of 20 glasss of described led chip 10 and described reflectors, make this part light-output to outer space 90, reflection by reflector 20 finally gets around led chip 10 outgoing, become the second portion white light with the blue light in led chip 10 fronts, and be shot out with described first white light, be the human eye finding.
Being different from prior art establishes fluorescent material in the LED bottom of wafer but is difficult to improve the technological deficiency of light utilization efficiency, the present invention arranges between at the bottom of 20 glasss of led chip 10 and reflectors and makes the light guide structure that exports to outer space 90 from the utilizing emitted light of led chip 10, light through fluorescence excitation between will be at the bottom of 20 glasss of led chip 10 and reflectors effectively guides away, can between at the bottom of 20 glasss of led chip 10 and reflectors, not lose and shelter from and can't utilize, significantly promote luminous efficiency and the luminosity of LED; Simultaneously, primer 50 adopts highly heat-conductive material to make, and the heat that can effectively led chip 10 be sent exhales rapidly, guarantees the normal operation of led chip 10, guarantees that also above-mentioned light guide structure can play a role really, increases whole amount of light.
Light guide structure of the present invention can have multiple different embodiment, as consults Fig. 2:
1) described light guide structure comprises the first glue-line 51 and the second glue-line 52 that is set in turn at the bottom of 20 glasss of the described reflectors, and described the first glue-line 51 is mixed with high heat-conducting medium, and described the second glue-line 52 is mixed with fluorescent material and high heat-conducting medium.
Because the first glue-line 51 provides one enough to allow the light loss district of light between " fleeing from " at the bottom of 20 glasss of led chip 10 and the reflectors for the second glue-line 52 and reflector at 20 the end, for the light A from the 52 inclination outgoing of the second glue-line provides enough reflection strokes, this part light can be gone out smoothly from led chip 10 sides.The light of light B when only prior art primer structure does not have the first glue-line among the figure, and among the figure light B ' for adopting structure of the present invention, the light in the actual light path that realizes.
Wherein, described high heat-conducting medium is silver powder, and it is the above silica gel of 4000mpa.s that described the first glue-line 51 and the second glue-line 52 contain viscosity.Silver powder has good conductive force, therefore is mixed in the heat that in the first glue-line 51 and the second glue-line 52 led chip 10 is sent and exhales by reflector 20 or radiator rapidly.
Consult Fig. 3, described light guide structure can also be:
2) at least one inclination reflective surface 81 between described light guide structure comprises at the bottom of 20 glasss of described high heat conduction fluorescence primer and reflectors.
Wherein, described light guide structure can be cone 80 or the halfpace among the figure, and the side of cone 80 or halfpace is reflective surface 81, and cone 80 or halfpace bottom is positioned at a side at the bottom of 20 glasss of the reflectors, and the top is positioned at led chip 10 1 sides.
By described cone 80 or halfpace, will go out from led chip 10 offside reflections from led chip 10 bottom surfaces and through the light that too high heat conduction fluorescence primer excites, and can not lose owing to the high heat conduction fluorescence primer that repeatedly turns back loses or beats in led chip 10 bottom surfaces.
Certainly, described light guide structure can also be the structures such as diffusion structure of being located at high heat conduction fluorescence primer, wherein diffusion structure can help " to flee from " out from the space between led chip 10 and the reflector 20 from the blue light of led chip 10 or through the gold-tinted that excites, and enters as in the outer space 90 among Fig. 2.
In other embodiments, establish red light fluorescent powder at described primer 50, establish gold-tinted fluorescent material at described outer fluorescence coating 60.What this embodiment considered is: the manufacture method of traditional white-light LED with high color rendering index is coated in wafer surface after glue, yellow fluorescent powder and red fluorescence powder are mixed, owing to wherein requiring consumption less to red fluorescence powder, therefore the present invention considers directly to do primer 50 fixed wafers in led chip 10 bottoms with the glue that is mixed with red fluorescence powder, only apply the fluorescent glue that is mixed with yellow fluorescent powder on led chip 10 surfaces, improve color rendering index.Certainly, the fluorescent material in the described high heat conduction fluorescence primer also can be identical with the fluorescent material of led chip 10 surface coverage to improve brightness.
Wherein, described blue light wafer is six luminescent wafers of horizontal structure, and its wavelength is between 445～465nm, and the thickness of described primer 50 can be 1/4～1 of described led chip 10 thickness.
The present invention also provides a kind of manufacture method of high-brightness white-light LED, mainly comprises step:
Step 401: glue and fluorescent material are mixed into high heat conduction fluorescence primer according to a certain ratio;
Step 402: the cup end that led chip is fixed on reflector by described high heat conduction fluorescence primer, arrange between at the bottom of described led chip and the described reflector cup and make the light guide structure that exports to outer space from the utilizing emitted light of led chip, and the high heat conduction fluorescence primer of fixed L ED chip is carried out baking-curing;
Step 403: the both positive and negative polarity that will be fixed on the led chip of reflector by wire is connected with external positive and negative electrode respectively;
Step 404: on the described led chip surface coverage that connects electrode with described high heat conduction fluorescence primer in the identical or different outer fluorescence coating of fluorescent material;
Step 405: the described reflector that is coated with outer fluorescence coating is inserted the mould intragranular that the melting light penetrating object is housed, and described light penetrating object is carried out baking and curing.
Adopt said method can obtain such as the LED structure among Fig. 1,2,3.
In one embodiment, the step that glue and fluorescent material is mixed into according to a certain ratio high heat conduction fluorescence primer comprises:
Utilize centrifugal blender that glue, gold-tinted fluorescent material, red light fluorescent powder, silver powder are mixed into high heat conduction fluorescence primer according to a certain ratio.In one embodiment:
Silver powder: purity 99.99%, granular size＜10 μ m
Yellow fluorescent powder emission wavelength: 570nm～590nm
Red fluorescence powder emission wavelength: 646nm～665nm
Make the high heat conduction fluorescence primer of high heat conduction high-brightness white-light LED: the ratio reference of glue, yellow fluorescent powder, silver powder: 1:0.08:0.05
Make the high heat conduction fluorescence primer of high heat conduction white-light LED with high color rendering index: the ratio reference of glue, red fluorescence powder, silver powder: 1:0.1:0.05
In another embodiment:
The step that the high heat conduction fluorescence primer of fixed L ED chip is carried out baking-curing comprises: be 160～180 ℃ to fluorescence primer baking temperature, stoving time is 1-2 hour;
The step of described light penetrating object being carried out baking and curing comprises: be that the temperature of the light penetrating object baking of epoxy resin is made as 120～130 ℃ to material, baking is to be 1-2 hour the time; Again the light penetrating object after the baking is carried out secondary baking, this baking temperature is 130～140 ℃, and stoving time is 4～8 hours.
The present invention also has significant progress than prior art in other respects, contrasts such as encapsulation finished product thermal resistance:
The prior art insulating cement is done primer: 300 ℃/W
The present invention is high, and the heat conduction fluorescent glue is done primer: 200 ℃/W, and also brightness compares and promotes 10%, and when colour temperature 5000K, color rendering index reaches more than 92, and the LED color rendering index that prior art processes is made is about 90.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (6)
1. high-brightness white-light LED, comprise the horizontal structure blue-light LED chip, reflector, wire and light penetrating object, described led chip is fixed in the described reflector, described light penetrating object covers described led chip, described led chip is fixed on the cup end of reflector by primer, described primer is high heat conduction fluorescence primer, be provided with between at the bottom of described led chip and the described reflector cup and make the light guide structure that exports to outer space from the utilizing emitted light of led chip, the side of described led chip at the bottom of the reflector cup is provided with outer fluorescence coating, the both positive and negative polarity of led chip is electrically connected with external positive and negative electrode respectively by wire, it is characterized in that: described light guide structure comprises the first glue-line and the second glue-line that is set in turn at the bottom of the described reflector cup, described the first glue-line is mixed with high heat-conducting medium, and described the second glue-line is mixed with fluorescent material and high heat-conducting medium.
2. high-brightness white-light LED according to claim 1, it is characterized in that: described high heat-conducting medium is silver powder, it is the above silica gel of 4000mpa.s that described the first glue-line and the second glue-line contain viscosity.
3. high-brightness white-light LED according to claim 1 is characterized in that: described light guide structure comprises at least one inclination reflective surface between at the bottom of described primer and the reflector cup.
4. high-brightness white-light LED according to claim 3, it is characterized in that: described light guide structure is cone or halfpace, and the side of cone or halfpace is reflective surface, and cone or halfpace bottom are positioned at a side at the bottom of the reflector cup, and the top is positioned at led chip one side.
5. according to claim 1 to 4 each described high-brightness white-light LEDs, it is characterized in that: described primer is provided with red light fluorescent powder, and described outer fluorescence coating is provided with gold-tinted fluorescent material.
6. according to claim 1 to 4 each described high-brightness white-light LEDs, it is characterized in that: described blue-light LED chip is six luminescent wafers of horizontal structure, and its wavelength is between 445～465nm, and the thickness of described primer is 1/4～1 of described led chip thickness.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10248372B2 (en) | 2013-12-31 | 2019-04-02 | Ultravision Technologies, Llc | Modular display panels |
| CN111710772A (en) * | 2020-05-20 | 2020-09-25 | 深圳市源磊科技有限公司 | LED lamp bead and dispensing method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544245A (en) * | 2010-12-15 | 2012-07-04 | 浙江西子光电科技有限公司 | LED packaging method and structure |
| US9195281B2 (en) | 2013-12-31 | 2015-11-24 | Ultravision Technologies, Llc | System and method for a modular multi-panel display |
| CN103887408A (en) * | 2014-03-29 | 2014-06-25 | 中山市聚明星电子有限公司 | Manufacturing technology of LED white light |
| US10706770B2 (en) | 2014-07-16 | 2020-07-07 | Ultravision Technologies, Llc | Display system having module display panel with circuitry for bidirectional communication |
| CN104198453B (en) * | 2014-09-15 | 2017-02-15 | 厦门大学 | Remote fluorescent powder performance test device and test method |
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| CN2738401Y (en) * | 2004-10-26 | 2005-11-02 | 简稚文 | Fluorescent conversion type light-emitting diode |
| CN101533879A (en) * | 2008-03-10 | 2009-09-16 | 璨圆光电股份有限公司 | Light-emitting diode (LED) capable of increasing luminescence efficiency |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2738401Y (en) * | 2004-10-26 | 2005-11-02 | 简稚文 | Fluorescent conversion type light-emitting diode |
| CN101533879A (en) * | 2008-03-10 | 2009-09-16 | 璨圆光电股份有限公司 | Light-emitting diode (LED) capable of increasing luminescence efficiency |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10248372B2 (en) | 2013-12-31 | 2019-04-02 | Ultravision Technologies, Llc | Modular display panels |
| CN111710772A (en) * | 2020-05-20 | 2020-09-25 | 深圳市源磊科技有限公司 | LED lamp bead and dispensing method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
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