CN205141020U - Light emitting diode module - Google Patents
Light emitting diode module Download PDFInfo
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- CN205141020U CN205141020U CN201520770173.1U CN201520770173U CN205141020U CN 205141020 U CN205141020 U CN 205141020U CN 201520770173 U CN201520770173 U CN 201520770173U CN 205141020 U CN205141020 U CN 205141020U
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- light
- emitting diode
- conversion layer
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- diode chip
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Abstract
The utility model discloses a light emitting diode module, including the base plate, still including being used for sending the visible light and connecting solely to put emitting diode chip and 1 at least luminescence unit of connecting on the base plate or 2 at least luminescence units of connecting on the base plate on the base plate, the luminescence unit including the built -in emitting diode chip that is used for sending the visible light and one deck can by the provocative light conversion layer of visible light that the emitting diode chip sent, the light conversion layer that has one in all luminescence units at least is red color conversion layer, this red color conversion layer is aroused the back by the visible light that the emitting diode chip sent, and the emmission spectrum dominant wavelength is 600 -670nm. The utility model provides a frequency spectrum of RGB emitting diode mixed light is narrow, structure complexity, control system cost and reliability problem. The ratio that ratio between the mixed light that can form simultaneously comparatively is close preset can improve the light efficiency and the color rendering index of light emitting module like this.
Description
Technical field
The utility model relates to optical field, is specifically related to a kind of light-emitting diode (LED) module.
Background technology
We need the white light that mixing different wave length visible ray is made in illumination applications, and in prior art, the mainstream scheme utilizing light-emitting diodes tubing to realize mixed white light has two kinds:
1) RGB light emitting diode light mixing: the light being sent different wave length by the light-emitting diode of unlike material, forms white light after mixing, as shown in accompanying drawing 1,2.This scheme has following deficiency: manufacture the white LED light source that color rendering index is high, and we need to add the element that can send ruddiness, namely utilize red light chips mixed light.
Light-emitting diode due to different-waveband can only send a kind of light of color, thus spectrum only one and narrow spectrum, and the spectrum right and wrong of RGB light-emitting diode institute split are successional, as shown in Figure 4.Although light source color rendering index is higher, needs various chips to go integrated split, add the complexity of structure, cause the difficulty in packaging technology.In addition because the chip material of different wave length differs, the driving voltage of chip is also different, needs several circuit with the scheme of several chip mixed lights, considerably increases the cost of control system.Chip differs and also brings the problem of reliability simultaneously, and light-emitting diode can be aging in application process, but the light-emitting diode aging speed of unlike material inconsistent, and the color of light source can be drifted about in time, becoming and being not suitable for illumination application.
2) light conversion layer light emitting diode light mixing: utilize light-converting material the light converting other wavelength to sending self-luminous diode, light conversion layer is as base material by macromolecule transparent material, fluorescent material is that light-converting material is distributed in base material, light conversion layer covers meeting at LED surface, as shown in Figure 3.Blue light sends from chip, the fluorescent material of different colours in exciting light conversion layer, and the green-yellow light and the ruddiness that are converted formation are mixed together formation white light with the blue light be not partly converted.
In order to reach higher color rendering index, optical conversion luminous diode can at light conversion layer mixture of red, yellowish green fluorescent material.The wave band that excites of red fluorescence powder is 200-610nm, can absorb other visible wavelengths comprised except ruddiness.In the ideal case, the blue light sent from light-emitting diode chip for backlight unit is after two kinds of fluorescent material, and the light that the light be converted and part are not converted is mixed together formation white light.But, the green-yellow light that yellowish green fluorescent powder is launched has part and is again absorbed by red fluorescence powder and be converted to ruddiness, as shown in Figure 5, and this absorptivity is nonlinear at different wavelengths, the target optical spectrum making this mixing preparation comprising multiple fluorescent material will reach some high color rendering index (CRI)s is very difficult, even may not.Moreover green-yellow light is gradually resorbed and can causes energy loss, reduces light efficiency further.
Utility model content
The purpose of this utility model is to exist in problem for prior art, a kind of light-emitting diode (LED) module is provided, it uses the red light unit with red conversion layer to replace red light chips, the light-emitting diode (LED) module of white light can be sent with red light unit composition, which raises light efficiency and the color rendering index of light emitting module.
For achieving the above object, the technical scheme that this programme adopts has two kinds:
First: a kind of light-emitting diode (LED) module, comprises substrate, also comprise and for sending visible ray and being connected to substrate solely puts light-emitting diode chip for backlight unit and at least 1 luminescence unit be connected on substrate;
Described luminescence unit comprises the light conversion layer of the excited by visible light that built-in light-emitting diode chip for backlight unit for sending visible ray and one deck can be sent by described light-emitting diode chip for backlight unit;
The light conversion layer of one is had at least to be red conversion layer in all luminescence units; After the excited by visible light that this red conversion layer is sent by light-emitting diode chip for backlight unit, emission spectrum dominant wavelength is 600-670nm.
The light sent from built-in light-emitting diode is through red conversion layer, and part light is converted to ruddiness, is mixed into white light with the light solely putting light-emitting diode chip for backlight unit and send other colors.
Second: a kind of light-emitting diode (LED) module, comprises substrate, also comprise at least 2 luminescence units be connected on substrate;
Described luminescence unit comprises the light conversion layer of the excited by visible light that built-in light-emitting diode chip for backlight unit for sending visible ray and one deck can be sent by described light-emitting diode chip for backlight unit;
The light conversion layer of one is had at least to be red conversion layer in all luminescence units; After the excited by visible light that this red conversion layer is sent by light-emitting diode chip for backlight unit, emission spectrum dominant wavelength is 600-670nm.
The light sent from built-in light-emitting diode is through red conversion layer, and part light is converted to ruddiness, and the light of other colors sent with other luminescence units is mixed into white light.
Under above-mentioned two schemes, its respective preferred version also comprises following situation:
Such scheme is preferred, and the optical index of the basis material of described light conversion layer can be 1.35-1.60.
Such scheme is preferred, and the basis material of light conversion layer is fitted in the surface of described built-in light-emitting diode chip for backlight unit.
Such scheme is preferred, describedly solely put light-emitting diode chip for backlight unit or built-in light-emitting diode sends the blue light that dominant wavelength is 440-470nm, and the light conversion layer of one of them luminescence unit is yellow green conversion layer, described yellow green conversion layer absorption portion blue light also inspires green-yellow light.
Such scheme is preferred, and described yellow green conversion layer comprises yellowish green fluorescent powder.The composition of described yellowish green fluorescent powder is one or more in carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance.
Such scheme is preferred, and the basis material of described light conversion layer is transparent resin.The composition of transparent resin is one or more in organic siliconresin, epoxy resin and acrylic resin.
Such scheme is preferred, and described red conversion layer comprises red fluorescence powder.The composition of described red fluorescence powder is nitride phosphor and/or sulphide phosphor.By changing the weight ratio of fluorescent material and basis material, thus reach the object of the colour temperature changing this light-emitting diode (LED) module.
Such scheme is preferred, and the excitation wavelength range of described red conversion layer is 200-610nm, and emission spectrum dominant wavelength is 600-670nm, and the excitation wavelength range of described yellow green conversion layer is 200-490nm, and emission spectrum dominant wavelength is 520-575nm.
Such scheme is preferred, and the emission wavelength of red conversion layer is greater than the emission wavelength of other light conversion layers.
Compared with prior art, the utility model uses the red light unit with red conversion layer to replace red light chips, can send the light-emitting diode (LED) module of white light with red light unit composition.This scheme solves the narrow spectrum of RGB light emitting diode light mixing, structural complexity, control system cost and integrity problem.Simultaneously because yellowish green luminescence unit does not directly contact with red light unit, this reduces from yellowish green luminescence unit green-yellow light out again by the chance of red light conversion layer secondary excitation, thus make the comparatively close proportioning preset of the proportioning between the final mixed light formed, light efficiency and the color rendering index of light emitting module can be improved like this.
Accompanying drawing explanation
Fig. 1,2 is the structural representation of RGB light emitting diode light mixing in prior art;
Fig. 3 is the structural representation of light conversion layer light emitting diode light mixing in prior art;
Fig. 4 is the curve chart of Fig. 1, Fig. 2 bright dipping spectrum;
Fig. 5 is the curve chart of Fig. 3 bright dipping spectrum;
Fig. 6 is a kind of structural representation of embodiment;
Fig. 7 is the structural representation of another kind of embodiment;
Fig. 8 is the structural representation of another kind of embodiment;
Fig. 9 is the structural representation of another kind of embodiment;
Figure 10 is the structural representation of another kind of embodiment;
Figure 11 is under 2700K colour temperature, the curve chart of the bright dipping spectrum that the utility model can be reached;
Figure 12 is under 5000K colour temperature, the curve chart of the bright dipping spectrum that the utility model can be reached;
Figure 13 is the curve comparison figure of the bright dipping spectrum that prior art and the utility model can be reached.
Number in the figure is: 1, substrate; 2, luminescence unit; 2-1, built-in light-emitting diode chip for backlight unit; 2-2, light conversion layer; 2-3, red light unit; 2-4, green-yellow light unit; 2-5, blue light unit; 2-6, white light unit; 3, solely light-emitting diode chip for backlight unit is put.
Embodiment
The utility model is a kind of light-emitting diode (LED) module, comprise at least 2 luminescence units 2, described luminescence unit 2 comprises the light conversion layer 2-2 of the excited by visible light that built-in light-emitting diode chip for backlight unit 2-1 and one deck for sending visible ray can be sent by described light-emitting diode chip for backlight unit; The light conversion layer 2-2 of one is had at least to be red conversion layer in all luminescence units 2, its light conversion layer 2-2 is the luminescence unit 2 of red conversion layer, we are referred to as red light unit 2-3, the conversion layer of sending out of luminescence unit 2 is the conversion layer of other colors, as green-yellow light conversion layer, we are referred to as green-yellow light luminescence unit 2.After the excited by visible light that described red conversion layer is sent by light-emitting diode chip for backlight unit, red conversion layer absorbs the visible ray that built-in light-emitting diode sends, and is partially converted into the ruddiness that wavelength is 600-670nm; Other luminescence unit 2, primarily of its built-in light-emitting diode chip for backlight unit 2-1 with can be formed by the light conversion layer 2-2 that this built-in light-emitting diode chip for backlight unit 2-1 excites; The emission wavelength of red conversion layer is greater than the emission wavelength of other light conversion layers 2-2.The utility model utilizes red light unit 2-3 and other luminescence units 2, and the visible ray sent combines, the white light source that final synthesis color rendering index is high.
In addition, red conversion layer and other light conversion layers 2-2 have included fluorescent material and basis material.Fluorescent material is for absorbing and exciting the light through it.Basis material is transparent, and it is for determining the optical index of light conversion layer 2-2.The optical index of the basis material of light conversion layer 2-2 is preferably 1.35-1.60.
The composition of the basis material of light conversion layer 2-2 can all preferentially select in organic siliconresin, epoxy resin and acrylic resin one or more.The hot oxygen of organic siliconresin is comparatively stable, and transparency is better.The good heat resistance of epoxy resin, and cost is lower.Light resistance and the ageing resistace of acrylic resin are better.Moreover these resin materials, without the need to using hot setting, can not cause damage to the fluorescent material of filling.
In one embodiment, as shown in Figure 6, light-emitting diode (LED) module comprises two luminescence units 2 and forms.One of them is red light unit 2-3, and it comprises built-in light-emitting diode chip for backlight unit 2-1, for sending blue light; Red conversion layer is covered with in the light-emitting area of light-emitting diode chip for backlight unit.Another is green-yellow light unit 2-4, and it comprises built-in light-emitting diode, for sending blue light; Yellow green conversion layer is covered with in the light-emitting area of built-in light-emitting diode chip for backlight unit 2-1.
In another embodiment, as shown in Figure 9, light-emitting diode (LED) module forms primarily of four luminescence units 2, can send ruddiness, blue light, green glow and white light respectively, is red light unit 2-3, blue light unit 2-5, green-yellow light unit 2-4 and white light unit 2-6.Wherein red light unit 2-3, for sending ruddiness, it comprises built-in light-emitting diode chip for backlight unit 2-1, and built-in light-emitting diode chip for backlight unit 2-1 is used for sending blue light; Red conversion layer is covered with in the light-emitting area of built-in light-emitting diode chip for backlight unit 2-1.Green-yellow light unit 2-4, for sending green-yellow light, it comprises built-in light-emitting diode chip for backlight unit 2-1, and built-in light-emitting diode chip for backlight unit 2-1 is used for sending blue light; Yellowish green conversion layer is covered with in the light-emitting area of built-in light-emitting diode chip for backlight unit 2-1; Described yellow green conversion layer comprises yellowish green fluorescent powder, the composition of described yellowish green fluorescent powder comprise following at least one: carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance; The excitation wavelength range of described yellow green conversion layer is 200-490nm, and emission spectrum dominant wavelength is 520-575nm.White light unit 2-6, for sending white light, it comprises built-in light-emitting diode chip for backlight unit 2-1, and built-in light-emitting diode chip for backlight unit 2-1 is used for sending blue light; White light conversion layer is covered with in the light-emitting area of built-in light-emitting diode chip for backlight unit 2-1; White light conversion layer can form by more than a kind of fluorescent material, and the wave-length coverage of emission spectrum is 300-670nm, the phosphor constituents of described white transition layer comprise following at least one: carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance.Blue light unit 2-5 is used for sending blue light, and it comprises built-in light-emitting diode chip for backlight unit 2-1 and hyaline layer.
The invention also discloses a kind of light-emitting diode (LED) module, comprise substrate 1, for sending visible ray and being connected to substrate 1 solely put light-emitting diode chip for backlight unit 3 and at least 1 luminescence unit 2 be connected on substrate 1; Described luminescence unit 2 comprises the light conversion layer 2-2 of the excited by visible light that built-in light-emitting diode chip for backlight unit 2-1 and one deck for sending visible ray can be sent by described light-emitting diode chip for backlight unit; The light conversion layer 2-2 of one is had at least to be red conversion layer in all luminescence units 2; After the excited by visible light that this red conversion layer is sent by light-emitting diode chip for backlight unit, emission spectrum dominant wavelength is 600-670nm.
In another embodiment, as shown in Figure 7, light-emitting diode (LED) module is solely put light-emitting diode chip for backlight unit 3 primarily of a luminescence unit 2 and one and is formed.Wherein luminescence unit 2 is red light unit 2-3, and it comprises built-in light-emitting diode chip for backlight unit 2-1, for sending blue light; Red conversion layer is covered with in the light-emitting area of built-in light-emitting diode.Solely put light-emitting diode chip for backlight unit 3 for green-yellow light chip, for sending green-yellow light, emission wavelength is 520-575nm.
In another embodiment, as shown in Figure 8, light-emitting diode (LED) module is solely put light-emitting diode chip for backlight unit 3 primarily of two luminescence units 2 and one and is formed.Two luminescence units 2 are red light unit 2-3 and green-yellow light unit 2-4, and wherein red light unit 2-3 is used for sending ruddiness, and it comprises built-in light-emitting diode chip for backlight unit 2-1, and built-in light-emitting diode chip for backlight unit 2-1 is used for sending blue light; Red conversion layer is covered with in the light-emitting area of built-in light-emitting diode chip for backlight unit 2-1.Green-yellow light unit 2-4 is used for sending green-yellow light, and it comprises built-in light-emitting diode chip for backlight unit 2-1, and built-in light-emitting diode chip for backlight unit 2-1 is used for sending blue light; Yellowish green conversion layer is covered with in the light-emitting area of built-in light-emitting diode chip for backlight unit 2-1.Described yellow green conversion layer comprises yellowish green fluorescent powder, the composition of described yellowish green fluorescent powder comprise following at least one: carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance.The excitation wavelength range of described yellow green conversion layer is 200-490nm, and emission spectrum dominant wavelength is 520-575nm.
In addition, as shown in Figure 10, light-emitting diode (LED) module can be well known to those skilled in the art formal dress, upside-down mounting or other structures (such as vertical stratification) etc.In addition, upside-down mounting built-in light-emitting diode chip for backlight unit 2-1 or solely put when light-emitting diode chip for backlight unit 3 encapsulates light-emitting diode upside-down mounting can be selected without gold thread wafer-level package.
For the selection of the thickness of each light conversion layer 2-2 and the weight ratio of fluorescent material and basis material thereof, depend primarily on the colour temperature of described light-emitting diode (LED) module and dimensional requirement and make different matching.The combination of allowing is not particularly limited.
When light-emitting diode (LED) module sends the white light of 2700 colour temperatures, luminescence unit 2 number of light-emitting diode (LED) module can be 3, and the quantitative proportion of red light unit 2-3 and green-yellow light unit 2-4 can be 2:1.The thickness of the light conversion layer 2-2 of red light unit 2-3 can be 0.5mm, and the weight ratio of the basis material of red fluorescence powder and red conversion layer is 5-70:30-95.The thickness of the light conversion layer 2-2 of green-yellow light unit 2-4 can be 0.5mm, and the thickness of yellow green conversion layer can be 0.5mm, and the weight ratio of the basis material of yellowish green fluorescent powder and yellow green conversion layer is 1: 2.
When LED device sends 5000K colour temperature, luminescence unit 2 number of light-emitting diode (LED) module can be 5, and the quantitative proportion of red light unit 2-3 and green-yellow light unit 2-4 can be 2:3.The thickness of the conversion layer 12 of red light unit 2-3 can be 0.5mm, and the weight ratio of the basis material of red fluorescence powder and red conversion layer is 5-70:30-95.The thickness of the conversion layer of green-yellow light unit 2-4 can be 0.5mm, and the thickness of yellow green conversion layer can be 0.5mm, and the weight ratio of the basis material of yellowish green fluorescent powder and yellow green conversion layer is 2: 3.
The light-emitting diode (LED) module arranged by the way, as can be seen from Figure 11,12,13, the radiation flux distribution that the radiation flux distribution that light-emitting diode (LED) module of the present utility model can reach and light-emitting diode (LED) module of the prior art reach differs obvious.The color rendering index of the white light that light-emitting diode (LED) module of the present utility model is finally formed can reach more than 90.
In addition, the composition of red fluorescence powder comprise following at least one: nitride phosphor or sulphide phosphor.The commercial product of nitride phosphor and sulphide phosphor is commercially commonplace, to source and quality more guaranteed.Particularly, can be one or more in CaSi2O2N2:Eu, SrSi2O2N2:Eu, BaSi2O2N2:Eu, Ca-α-SiAlON, ZnS:Cu, Al, CaS:Eu, CaGa2S4:Eu and SrGa2S4:Eu.
The composition of yellowish green fluorescent powder comprise following at least one: carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance.The commercial product of carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance is commercially very general, and cost is lower, thus can reduce the cost of LED device further.Particularly, can be Y3Al5O12:Ce, (Y, Gd) 3Al5O12:Ce, Tb3Al3O12:Ce, Ca3Sc2Si3O12:Ce, Lu2CaMg2 (Si, Ge) one or more in 3O12:Ce, CaSi2O2N2:Eu, SrSi2O2N2:Eu, BaSi2O2N2:Eu, Ca-α-SiAlON, CaAl12O19:Mn, SrAl2O4:Eu, (Sr, Ba) 2SiO4:Eu, Ca3SiO4Cl2:Eu, Sr3SiO5:Eu, Li2SrSiO4:Eu and Ca3Si2O7:Eu.
Claims (9)
1. a light-emitting diode (LED) module, comprise substrate (1), it is characterized in that: also comprise and for sending visible ray and being connected to substrate (1) solely puts light-emitting diode chip for backlight unit (3) and at least 1 luminescence unit (2) be connected on substrate (1), or at least 2 luminescence units (2) be connected on substrate (1);
Described luminescence unit (2) comprises the light conversion layer (2-2) of the excited by visible light that built-in light-emitting diode chip for backlight unit (2-1) and one deck for sending visible ray can be sent by described light-emitting diode chip for backlight unit;
The light conversion layer (2-2) of one is had at least to be red conversion layer in all luminescence units (2); After the excited by visible light that this red conversion layer is sent by light-emitting diode chip for backlight unit, emission spectrum dominant wavelength is 600-670nm.
2. light-emitting diode (LED) module according to claim 1, is characterized in that: the optical index of the basis material of described light conversion layer (2-2) is 1.35-1.60.
3. light-emitting diode (LED) module according to claim 1, is characterized in that: the basis material of described light conversion layer (2-2) is fitted in the surface of described built-in light-emitting diode chip for backlight unit (2-1).
4. the light-emitting diode (LED) module according to any one of claim 1-3, it is characterized in that: describedly solely put light-emitting diode chip for backlight unit (3) or built-in light-emitting diode sends the blue light that dominant wavelength is 440-470nm, and the light conversion layer (2-2) of one of them luminescence unit (2) is yellow green conversion layer, described yellow green conversion layer absorption portion blue light also inspires green-yellow light.
5. light-emitting diode (LED) module according to claim 4, it is characterized in that: described yellow green conversion layer comprises yellowish green fluorescent powder, the composition of described yellowish green fluorescent powder is one or more in carbuncle type fluorophor, nitrogen oxide fluorophor or chlorate MClO 3 fluorescent substance.
6. light-emitting diode (LED) module according to claim 4, it is characterized in that: the basis material of described light conversion layer (2-2) is transparent resin, the composition of transparent resin is one or more in organic siliconresin, epoxy resin and acrylic resin.
7. light-emitting diode (LED) module according to claim 1, is characterized in that: described red conversion layer comprises red fluorescence powder, and the composition of described red fluorescence powder is nitride phosphor and/or sulphide phosphor.
8. light-emitting diode (LED) module according to claim 4, it is characterized in that: the excitation wavelength range of described red conversion layer is 200-610nm, emission spectrum dominant wavelength is 600-670nm, the excitation wavelength range of described yellow green conversion layer is 200-490nm, and emission spectrum dominant wavelength is 520-575nm.
9. light-emitting diode (LED) module according to claim 1, is characterized in that: the emission wavelength of red conversion layer is greater than the emission wavelength of other light conversion layers (2-2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520770173.1U CN205141020U (en) | 2015-09-30 | 2015-09-30 | Light emitting diode module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520770173.1U CN205141020U (en) | 2015-09-30 | 2015-09-30 | Light emitting diode module |
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| CN205141020U true CN205141020U (en) | 2016-04-06 |
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| CN201520770173.1U Expired - Fee Related CN205141020U (en) | 2015-09-30 | 2015-09-30 | Light emitting diode module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417697A (en) * | 2018-02-28 | 2018-08-17 | 易美芯光（北京）科技有限公司 | A kind of method that adjustable spectroscopic light source realizes white light |
| CN110993772A (en) * | 2019-12-17 | 2020-04-10 | 宁波升谱光电股份有限公司 | Mixed light LED light source and LED lighting equipment |
-
2015
- 2015-09-30 CN CN201520770173.1U patent/CN205141020U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417697A (en) * | 2018-02-28 | 2018-08-17 | 易美芯光（北京）科技有限公司 | A kind of method that adjustable spectroscopic light source realizes white light |
| CN110993772A (en) * | 2019-12-17 | 2020-04-10 | 宁波升谱光电股份有限公司 | Mixed light LED light source and LED lighting equipment |
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