CN101661987A - White light LED packaging structure and packaging method thereof - Google Patents
White light LED packaging structure and packaging method thereof Download PDFInfo
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- CN101661987A CN101661987A CN200910192377A CN200910192377A CN101661987A CN 101661987 A CN101661987 A CN 101661987A CN 200910192377 A CN200910192377 A CN 200910192377A CN 200910192377 A CN200910192377 A CN 200910192377A CN 101661987 A CN101661987 A CN 101661987A
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- 238000009413 insulation Methods 0.000 claims abstract description 42
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Abstract
The invention discloses a white light LED packaging structure comprising a bracket and a plurality of LED chips arranged on the bracket, wherein a heat-insulation transparent material layer is coatedon the LED chips, a fluorescent powder layer is also coated on the heat-insulation transparent material layer, and a light outlet face of the heat-insulation transparent material layer and the fluorescent powder layer directly form a lens structure, or a lens structure is arranged on the fluorescent powder layer. The number of the LED chip is multiple, the heat-insulation transparent material layer and the fluorescent powder layer are sequentially and independently coated on each LED chip, or the heat-insulation transparent material layer and the fluorescent powder layer are integrally coatedon each LED chip. The invention has low manufacturing cost, improves the problem of heat radiation of a high-power white light LED, reduces light attenuation and enables the light color to be more stable.
Description
Technical field
The present invention relates to LED encapsulation technology field, relate in particular to a kind of White-light LED package structure and method for packing thereof.
Background technology
LED is a kind of light emitting semiconductor device, and it can directly be converted into electric energy the luminescent device of visible light and radiant energy, and it is low to have operating voltage, power consumption is little, and the luminous efficiency height is in light weight, therefore series of characteristics such as volume is little are widely used in indicator light, display screen etc.Along with advancing by leaps and bounds of great power LED development, white light LEDs is progressively come into the general lighting field, be described as the 4th generation lighting source.Form white light LEDs except the RGB combination, the mode that also has blue light or ultraviolet light chip excitated fluorescent powder, the light part excitated fluorescent powder that chip sends under the effect of electricity and produce the more visible light of long-wave band, this part visible light mix with another part light that chip sends and form white light.
The chip of white light LEDs mainly is the chip of the semiconducting compound GaN of III-V family material at present, and GaN base chip substrate has sapphire, SiC and Si etc., and chip can be sent out the light of ultraviolet light, blue wave band.The fluorescent material kind that is used to form white light LEDs is a lot, uses YAG (Y3Al5012:Ce3+) fluorescent material generally at present.The Y of the YAG Gd that can mix, and the Al Ga that can mix forms the fluorescent material of (Y1-aGda) 3 (Al1-bGab) 5012:Ce3+, changes excitation wavelength 450～480nm, can obtain the luminescent spectrum of 510～580nm.Osram company is long than YAG with fluorescent material TAG its emission wavelength when 470nm is blue-light excited that the Y among the YAG makes Tb formation into.
For large power white light LED, the quality of radiating effect and fluorescent material paint-on technique directly has influence on the service behaviour and the life-span of white light LEDs.The emission wavelength of LED varies with temperature and is about 0.2-0.3nm/ ℃, and spectral width increases thereupon, influences bright-colored degree.In addition, near room temperature, 1 ℃ of the every rising of temperature, the luminous intensity of LED can correspondingly reduce about 1%.And factors such as the thickness of fluorescent material and shape all can influence the light quality that of white light LEDs.The fluorescent material coating how better heat radiation and realization are good is two problems of most critical in the white light LEDs encapsulation.The Luxeon series of Lumileds company adopts the Golden Dragon series of thermoelectric mode of separating and Osram company directly to contact with metal circuit board heat sink, all has good heat dispersion.Aspect the fluorescent material coating, traditional still is the principal mode of present product with fluorescent material with the surface that a glue mode directly is coated to chip.Osram company and Cree company develop " white light " chip in succession, with semiconductor technology fluorescent material are covered chip surface, scribing again, and the fluorescent material thickness and the shape of this " white light " chip are well controlled, and bright dipping is even.
These coating methods all are that fluorescent material is directly contacted with chip, and chip mixes forming white light then at the direct excitated fluorescent powder in nearly territory.For this mode, the heat of chip directly is loaded on the phosphor powder layer, makes that the photochromic influence that changed by junction temperature of chip of LED is comparatively obvious; In addition, fluorescent material reduces light efficiency because of the accumulation conversion efficiency of heat descends; And fluorescent material near field mode of excitation makes the light loss of part backscattering, light decay become big, influences light efficiency.Also some company also has the coating method that adopts territory far away to excite to improve light extraction efficiency at present, but the structure more complicated that they proposed, and manufacture craft is difficult, and the heat radiation approach of phosphor powder layer is not considered yet.The photochromic influenced and light efficiency that causes encapsulating the back white light LEDs also can not get improving preferably.
Summary of the invention
At ubiquitous heat radiation in the encapsulation of present large power white light LED, light efficiency, light decay, photochromic problem, the invention provides a kind of large power white light LED encapsulating structure and method for packing thereof of being used for.Its encapsulating structure is simple, and technology is consistent with traditional encapsulation technology, and cost of manufacture is not high, can improve the heat dissipation problem of large power white light LED, and the minimizing light decay, make photochromic more stable, can steady operation under the condition of work of big electric current by the large power white light LED that this method is made.
For achieving the above object, technical scheme of the present invention is: a kind of White-light LED package structure, comprise support and be located at led chip on the support, be coated with the heat-insulation transparent material layer on the led chip, also be coated with phosphor powder layer on the heat-insulation transparent material layer, the exiting surface of this heat-insulation transparent material layer and phosphor powder layer directly form lens arrangement or a lens arrangement are set on phosphor powder layer.
This support is a glass bowl structure, and led chip is arranged on the bottom centre of glass bowl structure, and the medial surface of cup bowl structure is a speculum, and the heat-insulation transparent material layer is filled in glass bowl structure.
This support is planar bracket, and the exiting surface of heat-insulation transparent material layer is lens arrangement.
This phosphor powder layer is a double-decker, and it comprises the red fluorescence bisque that contacts with the heat-insulation transparent material layer and is positioned at the YAG phosphor powder layer in the red fluorescence bisque outside.The edge of this phosphor powder layer contacts with support.Add scattering particles and/or heat radiation particle in this phosphor powder layer.
The quantity of this led chip is a plurality of, independent successively heat-insulation transparent material layer and the phosphor powder layer of applying on each led chip, or with whole heat-insulation transparent material layer and the phosphor powder layer of applying of each led chip.
This encapsulating structure is to utilize the heat-insulation transparent material layer that led chip and phosphor powder layer are separated, each self-separation of heat that makes the generation of led chip and phosphor powder layer two parts.The heat that led chip produces passes to support by elargol, eutectic solder or other solid brilliant material and is dispersed into surrounding environment at last; The phosphor powder layer edge contacts with support, makes the phosphor powder layer heat also pass to the outside fast, avoids the accumulation of heat in the phosphor powder layer, has improved the conversion efficiency of phosphor powder layer.
The present invention also provides a kind of method for packaging white LED, comprises support and is located at led chip on the support, may further comprise the steps: a applies the heat-insulation transparent material layer by the mode of some glue on led chip; B applies phosphor powder layer by the mode of a glue or encapsulating on the heat-insulation transparent material layer; The exiting surface of this heat-insulation transparent material layer of c and phosphor powder layer directly form lens arrangement or lens arrangement are set on phosphor powder layer.
Among the present invention,, led chip is fixed on the support by elargol, eutectic solder or other solid brilliant scolders if the support of encapsulation is a glass bowl shape; The welding gold thread is finished electrical property and is connected; Directly be coated in the mode of a certain amount of heat-insulation transparent material layer by a glue on the led chip again; Select curing mode (hot curing, illumination curing etc.) to be cured according to the characteristic of heat-insulation transparent material layer; Allocate a certain proportion of fluorescent material and silica gel, mix stirring evenly and vacuumizing; Then be coated on the heat-insulation transparent material layer that has solidified by certain coating method a certain amount of phosphor gel of transferring and curing; Add lens at last.If the support of encapsulation is not a glass bowl shape, but planar bracket then directly directly is coated in the led chip surface with the heat-insulation transparent material layer, because the surface tension of heat-insulation transparent material layer, exiting surface can form approximate sphere, waits static no longer the flowing of material to solidify to form lens arrangement afterwards; Phosphor powder layer also is to utilize same principle, adopts same procedure to apply.
In the method for packing of the present invention, this heat-barrier material is a silica gel, and for three kinds of fluorescent material of ultraviolet excitation RGB, a kind of optional mode is that three kinds of fluorescent material are mixed with silica gel by special ratios, and then this fluorescent material is coated on the heat-insulation transparent material that has solidified.Excite yellow YAG fluorescent material for present general blue-ray LED, for the quality (as color rendering index, colour temperature etc.) of the light that improves white light LEDs, can take multiple fluorescent material to apply, not only can mix by multiple fluorescent material, can also in fluorescent material, add scattering particles, SiC heat radiation particle etc.Multiple fluorescent material can also be mixed glue respectively, successively putting glue again applies, such as earlier red fluorescence powder being coated on the heat-barrier material that has solidified and solidifying, again YAG fluorescent material is coated on the red fluorescence powder and solidifies, the coating order of these two kinds of fluorescent material can not be put upside down, if put upside down, will cause energy loss because of red fluorescence powder absorbs the secondary of sodium yellow, reduced light extraction efficiency.
Method of the present invention can be used for the encapsulation of multicore sheet white light LEDs: multicore sheet white light LEDs is because the heat that produces is concentrated, and the influence that therefore encapsulates received heat is serious.Adopt mode that heat isolates that phosphor powder layer and the chip passage of heat by is separately distributed heat, can reduce light decay better, the photochromic stability of raising white light LEDs.
The present invention adopts the heat-insulation transparent material layer that led chip and phosphor powder layer is isolated, makes their heat separate, and its advantage has:
1, adopts phosphor powder layer and the far field excitation mode that chip separates, compare, reduced the loss of phosphor powder layer back-scattering light, thereby improved light extraction efficiency with the nearly territory mode of excitation that directly contacts.
2, phosphor powder layer and chip are isolated by heat, make heat that these two parts produce distribute by passage separately, have reduced the influence of chip temperature to fluorescent material, make fluorescent material have higher conversion efficiency.
3, because phosphor powder layer separates with chip, make that the colour temperature of white light LEDs and influence that color rendering index is subjected to junction temperature of chip are less, the photochromic stability of white light LEDs is greatly improved.
4, the optional scope of heat isolation transparent material is big, if the glue that heat is isolated transparent material and phosphor powder layer mixing is during for same material mutually (such as all being silica gel), their thermal coefficient of expansion is approaching, and refractive index difference is very little, therefore the loss of the light that is caused by total reflection reduces, and makes light extraction efficiency be improved.
5, the coating of heat-insulation transparent material and fluorescent material can be adopted the mode that traditional some glue applies, and save production cost, and encapsulating structure is simple, and technology is easy, is fit to large-scale industrial production.
Description of drawings
The large power white light LED structural representation (positive cartridge chip) of Fig. 1 for adopting hot isolation method encapsulation
Fig. 2 is for adopting the large power white light LED structural representation (flip-chip) of hot isolation method encapsulation
Fig. 3 is for adopting hot isolation method packaged high-power white light LEDs process chart
Fig. 4 is for adopting the planar bracket white-light LED structure schematic diagram of hot isolation method encapsulation
Fig. 5 is for adopting the large power white light LED structural representation (phosphor powder layer is a curved surface) of hot isolation method encapsulation
Fig. 6 is for adopting the two-layer phosphor powder layer white-light LED structure schematic diagram of hot isolation method encapsulation
Fig. 7 is the led chip structural representation that adopts many individual packages of hot isolation method on the same substrate
Fig. 8 adopts the integrated encapsulation multi-chip LED of hot isolation method structural representation on the same substrate
Wherein, 1 chip, 2 supports, 3 gold threads, 4 speculums, 5 heat-insulation transparent material layers, 6 phosphor powder layers (61 and 62 are respectively two kinds of different phosphor powder layers), 7 lens arrangements
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail.
As Fig. 1, Fig. 2 and shown in Figure 3, a certain amount of elargol on the cup bowl mid point of support is put into GaN blue-light LED chip 1 formal dress of powerful Sapphire Substrate on the elargol of support 2, carries out the thermmohardening baking, elargol is solidified, led chip 1 is fixed on the support 2; On the electrode of led chip 1, weld gold thread, finish electric connection with support 2; Again with a certain amount of heat-insulation transparent material layer 5, as silica gel material, mode by a glue directly is coated on the led chip 1, after the curing mode of deployed fluorescent material by a glue or encapsulating is coated on the heat-insulation transparent material layer 5 that has solidified, and makes its curing by baking; Add peripheral optics such as lens arrangement 7 at last.
As Fig. 5 and shown in Figure 6, adopt hot isolation method encapsulation white light LEDs, upper surface at the silica gel that has cured applies double-deck phosphor powder layer successively, be respectively red fluorescence bisque 61 and YAG phosphor powder layer 62, other are identical with embodiment 1, owing to the coating method of the double-deck phosphor powder layer that adopts heat to isolate, the white light LEDs of gained has high color rendering index (Ra can reach more than 90) than existing white light LEDs, more excellent photochromic stability and better radiating effect.
On a substrate, be fixed with many GaN base LED chips 1, as shown in Figure 7, the plurality of LEDs chip 1 on the substrate 2 is carried out the packaged type that heat is isolated respectively; As shown in Figure 8, the plurality of LEDs chip on the substrate 21 is carried out disposable integrated hot insulation package mode.Other are identical with embodiment 1.Isolate because many led chips 1 and phosphor powder layer 6 are carried out heat, can obviously improve radiating effect, improve light extraction efficiency.
Claims (10)
1, a kind of White-light LED package structure, comprise support and be located at led chip on the support, it is characterized in that: be coated with the heat-insulation transparent material layer on the led chip, also be coated with phosphor powder layer on the heat-insulation transparent material layer, the exiting surface of this heat-insulation transparent material layer and phosphor powder layer directly form lens arrangement or a lens arrangement are set on phosphor powder layer.
2, White-light LED package structure according to claim 1 is characterized in that: this support is a glass bowl structure, and led chip is arranged on the bottom centre of glass bowl structure, and the medial surface of cup bowl structure is a speculum, and the heat-insulation transparent material layer is filled in glass bowl structure.
3, White-light LED package structure according to claim 1 is characterized in that: this support is planar bracket, and the exiting surface of heat-insulation transparent material layer is lens arrangement.
4, White-light LED package structure according to claim 1 is characterized in that: this phosphor powder layer is a double-decker, and it comprises the red fluorescence bisque that contacts with the heat-insulation transparent material layer and is positioned at the YAG phosphor powder layer in the red fluorescence bisque outside.
5, White-light LED package structure according to claim 4 is characterized in that: the edge of this phosphor powder layer contacts with support.
6, White-light LED package structure according to claim 5 is characterized in that: add scattering particles and/or heat radiation particle in this phosphor powder layer.
7, according to each described White-light LED package structure of claim 1 to 6, it is characterized in that: the quantity of this led chip is a plurality of, independent successively heat-insulation transparent material layer and the phosphor powder layer of applying on each led chip, or with whole heat-insulation transparent material layer and the phosphor powder layer of applying of each led chip.
8, a kind of method for packaging white LED comprises support and is located at led chip on the support, it is characterized in that may further comprise the steps:
A, by the mode of some glue, on led chip, apply the heat-insulation transparent material layer;
B, by the mode of some glue or encapsulating, on the heat-insulation transparent material layer, apply phosphor powder layer;
The exiting surface of c, this heat-insulation transparent material layer and phosphor powder layer directly form a lens arrangement or a lens arrangement are set on phosphor powder layer.
9, method for packaging white LED according to claim 8, it is characterized in that: this support is a planar bracket, when applying the heat-insulation transparent material layer, directly heat-barrier material directly is coated in the led chip surface, because the surface tension of heat-barrier material, exiting surface forms approximate sphere, and solidify to form lens arrangement.
10, method for packaging white LED according to claim 9, it is characterized in that: this heat-barrier material is a silica gel, for three kinds of fluorescent material of ultraviolet excitation RGB, three kinds of fluorescent material are pressed special ratios mix, and then this fluorescent material is coated on the heat-insulation transparent material layer that has solidified with silica gel; Excite yellow YAG fluorescent material for blue-ray LED, take multiple mixed fluorescent powder to apply; Or in fluorescent material, add scattering particles, the SiC particle that dispels the heat; Or multiple fluorescent material mixed silica gel respectively, successively put glue again and apply.
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| CN200910192377A CN101661987A (en) | 2009-09-15 | 2009-09-15 | White light LED packaging structure and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910192377A CN101661987A (en) | 2009-09-15 | 2009-09-15 | White light LED packaging structure and packaging method thereof |
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| CN101661987A true CN101661987A (en) | 2010-03-03 |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931041A (en) * | 2010-07-14 | 2010-12-29 | 四川九洲光电科技股份有限公司 | Silica-based packaging light-emitting diode |
| CN101950788A (en) * | 2010-08-13 | 2011-01-19 | 重庆大学 | Power type white LED based on fluorescence lens |
| CN102255033A (en) * | 2011-07-14 | 2011-11-23 | 佛山市蓝箭电子有限公司 | High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method |
| CN102468286A (en) * | 2010-11-11 | 2012-05-23 | 西安麟字半导体照明有限公司 | Integrated light-emitting diode (LED) light source, and manufacturing method for light source |
| CN102468397A (en) * | 2010-11-08 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure |
| CN102891242A (en) * | 2012-10-30 | 2013-01-23 | 四川新力光源股份有限公司 | LED (Light-Emitting Diode) package device |
| CN102891245A (en) * | 2012-09-17 | 2013-01-23 | 温州大学 | High-power white light emitting diode (LED) packaging structure employing fluorescence wafer and packaging method thereof |
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| CN105355760A (en) * | 2014-11-11 | 2016-02-24 | 易美芯光（北京）科技有限公司 | Light emitting diode (LED) device characterized by wide color gamut display |
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| CN101931041A (en) * | 2010-07-14 | 2010-12-29 | 四川九洲光电科技股份有限公司 | Silica-based packaging light-emitting diode |
| CN101950788A (en) * | 2010-08-13 | 2011-01-19 | 重庆大学 | Power type white LED based on fluorescence lens |
| CN102468397A (en) * | 2010-11-08 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure |
| CN102468286A (en) * | 2010-11-11 | 2012-05-23 | 西安麟字半导体照明有限公司 | Integrated light-emitting diode (LED) light source, and manufacturing method for light source |
| CN102255033A (en) * | 2011-07-14 | 2011-11-23 | 佛山市蓝箭电子有限公司 | High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method |
| CN102255033B (en) * | 2011-07-14 | 2013-04-10 | 佛山市蓝箭电子股份有限公司 | High-power LED (Light-Emitting Diode) encapsulating structure and encapsulating method |
| CN102891245A (en) * | 2012-09-17 | 2013-01-23 | 温州大学 | High-power white light emitting diode (LED) packaging structure employing fluorescence wafer and packaging method thereof |
| CN102891242A (en) * | 2012-10-30 | 2013-01-23 | 四川新力光源股份有限公司 | LED (Light-Emitting Diode) package device |
| CN102891242B (en) * | 2012-10-30 | 2015-08-05 | 四川新力光源股份有限公司 | LED device |
| CN105280758A (en) * | 2014-06-18 | 2016-01-27 | 葳天科技股份有限公司 | Packaging structure and manufacture method of LED module |
| CN105355760A (en) * | 2014-11-11 | 2016-02-24 | 易美芯光（北京）科技有限公司 | Light emitting diode (LED) device characterized by wide color gamut display |
| CN106025052A (en) * | 2016-07-17 | 2016-10-12 | 王培培 | Semiconductor light-emitting element packaging resin and packaging structure thereof |
| CN106449943A (en) * | 2016-11-30 | 2017-02-22 | 芜湖聚飞光电科技有限公司 | Method for molding and sealing inverted quantum dot LED lamp bead |
| CN107425111A (en) * | 2017-06-28 | 2017-12-01 | 常州市鑫嘉生物科技有限公司 | A kind of white light LEDs long-distance fluorescent powder method for packing |
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